CN108250973A - A kind of chemical mechanical polishing liquid for barrier layer planarization - Google Patents
A kind of chemical mechanical polishing liquid for barrier layer planarization Download PDFInfo
- Publication number
- CN108250973A CN108250973A CN201611231352.3A CN201611231352A CN108250973A CN 108250973 A CN108250973 A CN 108250973A CN 201611231352 A CN201611231352 A CN 201611231352A CN 108250973 A CN108250973 A CN 108250973A
- Authority
- CN
- China
- Prior art keywords
- mechanical polishing
- chemical mechanical
- polishing liquid
- acid
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Abstract
The present invention relates to it is a kind of for barrier layer planarization chemical mechanical polishing liquid, including abrasive grains, azole compounds, complexing agent, nonionic surfactant and oxidant, wherein, the nonionic surfactant be block polyether class compound.It has high barrier material, dielectric layer material removal rate and adjustable dielectric materials, copper removal rate under the conditions of relatively mild, and can well be controlled in polishing process it is dish-like recess (Dishing), dielectric layer corrode (Erosion), metal erosion generation, and surface contaminant is reduced, the wafer after polishing has excellent shape characteristic.The chemical mechanical polishing liquid of the present invention has excellent market application foreground.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of chemical machinery throwings that can be applied to barrier layer planarization
Light liquid.
Background technology
At present, in integrated circuit fabrication, with the continuous improvement of the standard of interconnection technique, interconnection the number of plies be continuously increased,
Technology feature size constantly reduces, and the requirement to silicon chip surface flatness is also higher and higher.If can not achieve planarization, half
It will be very limited that complicated and intensive structure is created on semiconductor wafer.
At present, cmp method (CMP) is the most efficient method that entire silicon chip planarization can be achieved.CMP works
Skill is exactly using a kind of mixture and polishing pad polishing integrated circuit surface containing abrasive material.In typical cmp method
In, substrate directly with rotating polishing pad is contacted, applies pressure in substrate back with a loads.During polishing, gasket and
Operation console rotates, while the power to keep down in substrate back, by abrasive material and (commonly referred to as polishing fluid or the throwing of chemism solution
Light slurry) it is applied on gasket, the polishing fluid and the film polished occur chemical reaction and proceed by polishing process.
As integrated circuit technique develops to sub-micro (32,28nm) direction, caused by characteristic size reduces
The further serious performance for affecting circuit of parasitic capacitance, to reduce this influence, must just be reduced using dielectric materials
Parasitic capacitance between adjacent wires, it is more at present to use dielectric materials as BD (Black Diamond), in CMP processes
In other than wanting stringent control surface pollutant index and preventing metal erosion, also there is relatively low dish-like recess and polishing
Homogeneity, which just can guarantee, to be needed in the planarization process on relatively reliable electrical property, particularly barrier layer in the shorter time and more
Barrier metal is quickly removed under low pressure, capping oxide can simultaneously stop at low dielectric material surface well, be formed mutual
Line, and it is insensitive to small size figure.This just proposes CMP higher challenge, because usually dielectric materials is mix
The silica of miscellaneous carbon will control the residual thickness of stop-layer it is necessary to there is the ability of regulation and control of very strong selection ratio, also have very high
Stability and the features such as easy cleaning.
Existing many chemical mechanical polishing liquids for being applied to barrier layer planarization currently on the market, e.g., CN1400266 is public
A kind of alkali barrier polishing fluid is opened, which includes abrasive silica, aminated compounds and nonionic surfactant,
It can generate corrosion to copper metal layer after a polish；CN101372089A discloses a kind of alkali barrier polishing fluid, contains two
Silica abrasive, corrosion inhibitor, oxidant, non-ion fluorin surfactant, aromatic sulfonic acid oxidant compound, to blocking
Layer polishing speed is relatively low, and polishing efficiency is low；CN101012356A discloses a kind of blocked acidic layer polishing fluid, it includes oxidant,
The silica dioxide granule that part is covered by aluminium, inhibitor and complexing agent, to copper metal layer there are serious corrosion,
CN101747843A discloses a kind of copper chemical mechanical polishing solution, contains abrasive grains, complexing agent, oxidant, block polyether
The effect of class surfactant and water, wherein block polyether is to inhibit the removal rate of copper, is not directed to the polishing of dielectric materials
Effect.
Therefore, for problems of the prior art, dielectric materials-copper-connection processing procedure can be suitable for by seeking one kind
In barrier polishing, and the work of high barrier removal rates and dielectric materials interface can be realized under the conditions of relatively mild
Skill stop performance, at the same dish-like recess can be controlled well, the chemical mechanical polishing liquid of metal erosion and surface contaminant is this
Industry is urgently to be resolved hurrily to be solved the problems, such as.
Invention content
To solve the above problems, the present invention provides a kind of barrier layer chemical mechanical polishing liquid, under the conditions of relatively mild
With high barrier material, dielectric layer material removal rate and adjustable low dielectric layer material, the removal rate of copper, and can be
Controlled well in polishing process dish-like shape recess (Dishing), dielectric layer corrode (Erosion), metal erosion generation, with
And reduce surface contaminant.
Specifically, the present invention provides a kind of chemical mechanical polishing liquid for barrier layer planarization, it includes grindings
Grain, azole compounds, complexing agent, nonionic surfactant and oxidant, wherein, the nonionic surfactant is block
Polyether compound.
Wherein, the abrasive grains are silica dioxide granule；The mass percent concentration of abrasive grains is preferably 2~
20%, more preferably 5~15%；The grain size of the abrasive grains is preferably 10~250nm, more preferably 50~200nm.
Wherein, the azole compounds are preferably selected from one of the following or a variety of：Benzotriazole, methyl benzo
Triazole, 5- phenyl tetrazole, 5- amino-tetrazole, mercaptophenyl tetrazole, benzimidazole, aphthotriazoles and 2- sulfydryls-benzene
And thiazole.The mass percent concentration of the azole compounds is preferably 0.001~1%, more preferably 0.01~
0.5%.
Wherein, the complexing agent is one or more in organic carboxyl acid, organic phospho acid, amino acid and organic amine, compared with
Good is selected from one of the following or a variety of：Acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, citric acid, ethylenediamine tetra-acetic acid,
2- phosphonobutanes -1,2,4- tricarboxylic acids, aminotrimethylenephosphonic acid, 1-hydroxy ethylidene-1,1-diphosphonic acid, ethylene diamine tetra methylene phosphonic acid, sweet ammonia
Acid and ethylenediamine, the concentration of the mass percent of the complexing agent is preferably 0.001~2%, more preferably 0.01~
1%.
Wherein, the block polyether class compound is polyoxyethylene-poly-oxypropylene polyoxyethylene triblock polyether.It is described
Block polyether class compound has below formula：(CH2CH2O)x-(CH(CH3)CH2O)y-(CH2CH2O) z-OH may also indicate that
For (EO) x- (PO) y- (EO) z wherein, 10≤x, y, z≤150.The mass percent of the block polyether class surfactant is dense
Degree is preferably 0.001~1.0%, more preferably 0.01~0.5%.
Wherein, oxidant is selected from one of the following or a variety of：Hydrogen peroxide, Peracetic acid, potassium peroxydisulfate and persulfuric acid
Ammonium, preferably hydrogen peroxide.The mass percent concentration of the oxidant is preferably 0.01~5%, and more preferably 0.1
~2%.
Wherein, the pH value of the chemical mechanical polishing liquid is 8.0~12.0, more preferably 9.0~11.0.
In addition, the chemical mechanical polishing liquid of the present invention can also include the addition of other this fields such as pH adjusting agent and fungicide
Agent.
And chemical mechanical polishing liquid of the invention can concentrate preparation, when use, is diluted with deionized water and adds oxidation
The concentration range of agent to the present invention use.
Compared with prior art, the technical advantages of the present invention are that：It has high blocking under the conditions of relatively mild
Layer material, the removal rate of dielectric layer material and adjustable dielectric materials, the removal rate of copper；It can be in polishing process very
It is dirty that the dish-like shape recess (Dishing) of good control, dielectric layer corrode (Erosion), the generation of metal erosion and reduction surface
Contaminate object.It can concentrate preparation, facilitate storage and transport and use.
Specific embodiment
It is further illustrated the present invention below by the mode of embodiment, but the reality is not limited the present invention to this
It applies among a range.
Table 1 gives comparison polishing fluid 1~2 and the polishing fluid 1~13 of the present invention, by the formula given in table, by deoxygenation
Other components other than agent are uniformly mixed, and are adjusted with KOH or HNO3 to required pH value.Use preceding oxidizer, mixing
Uniformly.Water is surplus.
Table 1 compares polishing fluid 1~2 and the polishing fluid 1~13 of the present invention
Effect example 1
Using comparison polishing fluid 1~2 and the polishing fluid 1~9 of the present invention according to following conditions to copper (Cu), barrier material
Tantalum (Ta), dielectric material silica (TEOS) and dielectric materials (BD) are polished.Polishing condition：Polishing machine platform is 12 "
Reflexion LK boards, polishing pad are Fujibo pad, and lower pressure is 1.5psi, and rotating speed is polishing disk/rubbing head=113/
107rpm, polishing flow velocity are 300ml/min, polishing time 1min.
Table 2 compare polishing fluid 1~2 and 1~9 pair of copper (Cu) of polishing fluid of the present invention, tantalum (Ta),
The removal rate of silica (TEOS) and dielectric materials (BD)
As can be seen from Table 2, with comparison polishing fluid 1 compared with 2, polishing fluid of the invention can obtain higher barrier material
The removal rate of Ta and dielectric material silica (TEOS) can shorten polishing time, improve production capacity, while by adding not
The block polyether class Compound Surfactant of same amount, by the control of the removal rate of dielectric materials BD lower than TEOS, favorably
BD residual thickness after the polishing process of control pattern chip and polishing, and ensure the surface homogeneity of chip.
Effect example 2
Using comparison polishing fluid 2 and the polishing fluid 1~3 of the present invention according to following conditions to being carried out with figuratum copper chip
Polishing.The graphic chips are commercially available 12 inches of Sematech754 graphic chips, and film material is copper/tantalum/nitridation from top to bottom
Tantalum/TEOS/BD, polishing process point three steps, the first step most copper of commercially available copper polishing fluid removal, second step is with commercially available
Copper polishing fluid removes remaining copper, and the barrier polishing solution of the third step present invention is by barrier layer (tantalum/tantalum nitride), silica
TEOS and part dielectric materials BD are removed and are parked on BD layers.Barrier polishing solution polishing condition：Polishing machine platform is 12 "
Reflexion LK boards, polishing pad are Fujibo pad, and lower pressure is 1.5psi, and rotating speed is polishing disk/rubbing head=113/
107rpm, polishing flow velocity are 300ml/min, polishing time 70s.
Table 3 compares polishing fluid 2 and 1~3 pair of polishing fluid of the present invention with the correction ability pair after figuratum copper wafer polishing
Than
Wherein, the above Dishing refers to that the dish-like recess on metal gasket, Erosion are before barrier polishing
It is 0.18 micron to refer to barrier layer in line width, and the dielectric layer on close line region (50% bronze medal/50% dielectric layer) that density is 50% is invaded
Erosion, Δ (angstrom) refer to the correction ability value after polishing.
As can be seen from Table 3, compared with comparing polishing fluid 2, polishing fluid of the invention is due to inhibiting dielectric materials BD
Removal rate, can stop on BD well, be effectively controlled graphic chips polishing process and ensure that polishing after
BD residual thickness can preferably correct dish-like recess and erosion that future generates (after copper polishing) on wafer, obtain preferably
Wafer pattern.
Effect example 3
Using comparison polishing fluid 1 and polishing fluid 1 according to following conditions to being polished with figuratum copper chip.The figure
Chip is commercially available 12 inches of Sematech754 graphic chips, and film material is from top to bottom copper/tantalum/tantalum nitride/TEOS/BD,
Three steps of polishing process point, the first step remove most copper with commercially available copper polishing fluid, and second step is gone with commercially available copper polishing fluid
Except remaining copper, the barrier polishing solution of the third step present invention is by barrier layer (tantalum/tantalum nitride), silica TEOS and portion
Dielectric materials BD is divided to remove and be parked on BD layers.
Fig. 1 and Fig. 2 is respectively adopted comparison polishing fluid 1 and polishing fluid 1 polish after Sematech 754 graphics test wafers
The SEM figures of surface topography.Comparison is as can be seen that the polishing fluid of the present invention effectively inhibits metal erosion, particularly to copper wire
There is good protection in region, and after polishing fluid polishing of the graphics test wafer by the present invention, surface is still clear sharp keen, does not find
Metal erosion phenomenon, and non-polluting particle remains.
It should be noted that the embodiment of the present invention has preferable implementation, and not the present invention is made any type of
Limitation, any one skilled in the art change or are modified to possibly also with the technology contents of the disclosure above equivalent effective
Embodiment, as long as without departing from the content of technical solution of the present invention, what technical spirit according to the present invention made above example
Any modification or equivalent variations and modification, in the range of still falling within technical solution of the present invention.
Claims (19)
1. a kind of chemical mechanical polishing liquid for barrier layer planarization, which is characterized in that including abrasive grains, azole chemical combination
Object, complexing agent, nonionic surfactant and oxidant, wherein, the nonionic surfactant is block polyether class chemical combination
Object.
2. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the abrasive grains are silica dioxide granule,
The mass percent concentration of the abrasive grains is 2~20%, and the grain size of the abrasive grains is preferably 10~250nm.
3. chemical mechanical polishing liquid as claimed in claim 2, which is characterized in that the mass percent concentration of the abrasive grains
It is 5~15%, the grain size of the abrasive grains is 50~200nm.
4. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the azole compounds are selected from three nitrogen of benzo
Azoles, methyl benzotriazazole, 5- phenyl tetrazole, 5- amino-tetrazole, mercaptophenyl tetrazole, benzimidazole, aphthotriazoles
With it is one or more in 2- Mercapto-benzothiazoles.
5. chemical mechanical polishing liquid as described in claim 1 or 4, which is characterized in that the quality percentage of the azole compounds
Specific concentration is 0.001~1%.
6. chemical mechanical polishing liquid as claimed in claim 5, which is characterized in that the mass percent of the azole compounds is dense
Spend is 0.01~0.5%.
7. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the complexing agent is selected from organic carboxyl acid, organic
It is one or more in phosphonic acids, amino acid and organic amine.
8. chemical mechanical polishing liquid as claimed in claim 7, which is characterized in that the complexing agent is selected from acetic acid, propionic acid, grass
Acid, malonic acid, succinic acid, citric acid, ethylenediamine tetra-acetic acid, 2- phosphonobutanes -1,2,4- tricarboxylic acids, aminotrimethylenephosphonic acid,
1-hydroxy ethylidene-1,1-diphosphonic acid, ethylene diamine tetra methylene phosphonic acid, it is one or more in glycine and ethylenediamine.
9. the chemical mechanical polishing liquid as described in claim 1 or 7 or 8, which is characterized in that the mass percent of the complexing agent
A concentration of 0.001~2%.
10. chemical mechanical polishing liquid as claimed in claim 9, which is characterized in that the mass percent of the complexing agent it is dense
Spend is 0.01~1%.
11. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the block polyether class compound is polyoxy
Ethylene-polyoxypropylene polyoxyethylene triblock polyether.
12. chemical mechanical polishing liquid as claimed in claim 11, which is characterized in that the block polyether class compound have with
Lower chemical formula：(CH2CH2O)x-(CH(CH3)CH2O)y-(CH2CH2O) z-OH, wherein, 10≤x, y, z≤150.
13. the chemical mechanical polishing liquid as described in claim 1 or 11 or 12, which is characterized in that the block polyether class chemical combination
The mass percent concentration of object is 0.001~1.0%.
14. chemical mechanical polishing liquid as claimed in claim 13, which is characterized in that the quality of the block polyether class compound
Percent concentration is 0.01~0.5%.
15. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the oxidant is selected from hydrogen peroxide, peroxide
Acetic acid, it is one or more in potassium peroxydisulfate and ammonium persulfate.
16. the chemical mechanical polishing liquid as described in claim 1 or 15, which is characterized in that the mass percent of the oxidant
A concentration of 0.01~5%.
17. chemical mechanical polishing liquid as claimed in claim 16, which is characterized in that the mass percent concentration of the oxidant
It is 0.1~2%.
18. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the pH value of the chemical mechanical polishing liquid is
8.0~12.0.
19. chemical mechanical polishing liquid as claimed in claim 18, which is characterized in that the pH value of the chemical mechanical polishing liquid is
9.0~11.0.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611231352.3A CN108250973A (en) | 2016-12-28 | 2016-12-28 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
| PCT/CN2017/094309 WO2018120808A1 (en) | 2016-12-28 | 2017-07-25 | Chem-mechanical polishing liquid for barrier layer |
| TW106133676A TWI812595B (en) | 2016-12-28 | 2017-09-29 | Chemical mechanical polishing slurry for planarization of barrier film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611231352.3A CN108250973A (en) | 2016-12-28 | 2016-12-28 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108250973A true CN108250973A (en) | 2018-07-06 |
Family
ID=62706798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611231352.3A Pending CN108250973A (en) | 2016-12-28 | 2016-12-28 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN108250973A (en) |
| TW (1) | TWI812595B (en) |
| WO (1) | WO2018120808A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111378366A (en) * | 2018-12-27 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| WO2021135806A1 (en) * | 2019-12-31 | 2021-07-08 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid |
| CN113084280A (en) * | 2021-04-17 | 2021-07-09 | 吴杰森 | Hardware surface polishing process |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110806496A (en) * | 2019-10-10 | 2020-02-18 | 上海应用技术大学 | All-metal micro-inertia system device and processing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104650738A (en) * | 2013-11-22 | 2015-05-27 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid and application thereof |
| CN104745088A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof |
| CN104745090A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid and application thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080149884A1 (en) * | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing |
| CN101724346A (en) * | 2008-10-10 | 2010-06-09 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN101747843A (en) * | 2008-12-19 | 2010-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN101974297A (en) * | 2010-11-12 | 2011-02-16 | 大连三达奥克化学股份有限公司 | Core/shell type composite nano-abrasive copper chemical-mechanical polishing liquid |
| WO2014132641A1 (en) * | 2013-02-28 | 2014-09-04 | 株式会社フジミインコーポレーテッド | Polishing slurry for removal of cobalt |
| CN104559797B (en) * | 2014-12-22 | 2017-01-18 | 深圳市力合材料有限公司 | Silicon wafer fine polishing combination and preparation method thereof |
-
2016
- 2016-12-28 CN CN201611231352.3A patent/CN108250973A/en active Pending
-
2017
- 2017-07-25 WO PCT/CN2017/094309 patent/WO2018120808A1/en active Application Filing
- 2017-09-29 TW TW106133676A patent/TWI812595B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104650738A (en) * | 2013-11-22 | 2015-05-27 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid and application thereof |
| CN104745088A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof |
| CN104745090A (en) * | 2013-12-25 | 2015-07-01 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid and application thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111378366A (en) * | 2018-12-27 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111378366B (en) * | 2018-12-27 | 2022-11-18 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| WO2021135806A1 (en) * | 2019-12-31 | 2021-07-08 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid |
| CN113122145A (en) * | 2019-12-31 | 2021-07-16 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN113084280A (en) * | 2021-04-17 | 2021-07-09 | 吴杰森 | Hardware surface polishing process |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018120808A1 (en) | 2018-07-05 |
| TW201829675A (en) | 2018-08-16 |
| TWI812595B (en) | 2023-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101767295B (en) | Chemical mechanical polishing composition and methods relating thereto | |
| CN108250977A (en) | A kind of chemical mechanical polishing liquid for barrier layer planarization | |
| US20050090104A1 (en) | Slurry compositions for chemical mechanical polishing of copper and barrier films | |
| KR100956216B1 (en) | Compositions for chemical mechanical planarization of copper | |
| EP2035523A1 (en) | Compositions and methods for polishing silicon nitride materials | |
| CN106929858A (en) | Chemical mechanical polishing of metals slurry | |
| WO2021135806A1 (en) | Chemical-mechanical polishing liquid | |
| CN108250973A (en) | A kind of chemical mechanical polishing liquid for barrier layer planarization | |
| CN104745086A (en) | Chemical mechanical polishing solution for barrier layer planarization, and use method thereof | |
| CN104745088B (en) | A kind of chemical mechanical polishing liquid and its application method for barrier layer planarization | |
| CN106928862A (en) | A kind of chemical mechanical polishing liquid and its polish ULK- copper-connection processing procedures in barrier layer application | |
| WO2009056491A1 (en) | Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer | |
| US9496146B2 (en) | Method for forming through-base wafer vias | |
| CN111378972A (en) | Chemical mechanical polishing solution | |
| CN109971354A (en) | A kind of chemical mechanical polishing liquid | |
| CN109971357B (en) | Chemical mechanical polishing solution | |
| KR100479804B1 (en) | Slurry compositions for metal cmp | |
| CN111378382B (en) | Chemical mechanical polishing solution and application thereof | |
| CN104745090A (en) | Chemically mechanical polishing liquid and application thereof | |
| CN108250972A (en) | A kind of chemical mechanical polishing liquid for barrier layer planarization | |
| TW202134392A (en) | Chemical mechanical polishing slurry | |
| CN109971355A (en) | A kind of chemical mechanical polishing liquid | |
| CN111378367A (en) | Chemical mechanical polishing solution | |
| CN115058712B (en) | Copper barrier layer chemical mechanical polishing composition and application thereof | |
| KR101072342B1 (en) | Slurry compositions for chemical mechanical polishing of copper |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180706 |
|
| RJ01 | Rejection of invention patent application after publication |