CN108247874A - A kind of processing method of yttrium luetcium silicate crystal cuboid device - Google Patents
A kind of processing method of yttrium luetcium silicate crystal cuboid device Download PDFInfo
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- CN108247874A CN108247874A CN201711305351.3A CN201711305351A CN108247874A CN 108247874 A CN108247874 A CN 108247874A CN 201711305351 A CN201711305351 A CN 201711305351A CN 108247874 A CN108247874 A CN 108247874A
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- 239000013078 crystal Substances 0.000 title claims abstract description 64
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 229910052727 yttrium Inorganic materials 0.000 title 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 58
- ANDNPYOOQLLLIU-UHFFFAOYSA-N [Y].[Lu] Chemical compound [Y].[Lu] ANDNPYOOQLLLIU-UHFFFAOYSA-N 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000002519 antifouling agent Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 26
- 238000002844 melting Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 4
- 238000012797 qualification Methods 0.000 abstract description 4
- 230000003746 surface roughness Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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Abstract
本发明提供了一种硅酸钇镥晶体长方体器件的加工方法。该方法将硅酸钇镥晶体切成片状毛坯料，先加工片状毛坯料的两个平行相对的大面，再将加工好的两个大面涂上保护漆，之后把涂了保护漆的片状毛坯料粘成长方体进行切割，再加工新的切割面，加工过的新的切割面上涂上保护漆，之后再把新切割的毛坯料粘成长方体对剩下的两个面进行加工。加工过程中各器件互相粘结，相互保护，加工好的抛光面和棱角不直接露在外面，减少了加工过程中的摩擦和磕碰，克服了酸钇镥晶体长方体器件在加工中表面光洁度容易被破坏、棱角容易产生崩边的问题，提高了酸钇镥晶体长方体器件的加工效率和产品合格率，降低了产品成本。The invention provides a processing method for a cuboid device of yttrium lutetium silicate crystal. In this method, the yttrium lutetium silicate crystal is cut into a sheet-shaped rough blank, and two parallel and opposite large surfaces of the sheet-shaped blank are processed first, and then the processed two large surfaces are coated with protective paint, and then the coated protective paint The sheet-shaped blank is glued to the cuboid for cutting, and then the new cutting surface is processed, and the processed new cutting surface is coated with protective paint, and then the newly cut blank is glued to the cuboid for the remaining two surfaces. processing. During the processing, each device is bonded to each other and protects each other. The processed polished surface and edges are not directly exposed, which reduces friction and bumps during processing, and overcomes the surface roughness of the yttrium lutetium crystal cuboid device during processing. Destruction, edges and corners are easy to cause edge chipping, which improves the processing efficiency and product qualification rate of the yttrium lutetium crystal cuboid device, and reduces the product cost.
Description
技术领域technical field
本发明涉及硅酸钇镥晶体长方体器件的加工领域，尤其涉及一种硅酸钇镥晶体长方体器件的加工方法。The invention relates to the processing field of yttrium-lutetium silicate crystal cuboid devices, in particular to a processing method for yttrium-lutetium silicate crystal cuboid devices.
背景技术Background technique
硅酸钇镥晶体(LYSO)具有优良的闪烁性能，在多个领域具有广泛的应用。硅酸钇镥晶体器件对加工工艺要求较高，需要六面抛光，不能有破边也不能倒边。现有的硅酸钇镥长方体器件的加工方法是把硅酸钇镥晶体直接切成硅酸钇镥长方体器件毛坯，再逐一上盘加工六个面。这种加工方法使得已加工好的面和棱角暴露在外，容易导致暴露在外的已加工的硅酸钇镥长方体器件的表面光洁度被破坏、棱角产生崩边等问题，严重影响产品的合格率且加工效率低。Lutetium yttrium silicate crystal (LYSO) has excellent scintillation properties and has a wide range of applications in many fields. Yttrium lutetium silicate crystal devices have high requirements on processing technology, and need to be polished on six sides, without broken edges or chamfered edges. The existing processing method of the yttrium lutetium silicate cuboid device is to directly cut the yttrium lutetium silicate crystal into the yttrium lutetium silicate cuboid device blank, and then process six surfaces one by one on the plate. This processing method exposes the processed faces and corners, which easily leads to damage to the surface finish of the exposed processed yttrium lutetium silicate cuboid device, chipping of corners and other problems, which seriously affects the qualified rate of products and processing. low efficiency.
发明内容Contents of the invention
鉴于上述现有技术的不足，本发明提供了一种硅酸钇镥晶体长方体器件的加工方法。该方法将硅酸钇镥晶体切成片状毛坯料，先加工片状毛坯料的两个平行相对的大面，再将加工好的两个大面涂上保护漆，之后把涂了保护漆的片状毛坯料粘成长方体进行切割，再加工新的切割面，加工过的新的切割面上涂上保护漆，之后再把新切割的毛坯料粘成长方体对剩下的两个面进行加工。该酸钇镥晶体长方体器件的加工方法对酸钇镥晶体长方体器件毛坯料的各面进行逐面集中切割和逐面集中加工，并在逐面加工后即对已加工面进行保护。加工过程中各器件互相粘结，相互保护，加工好的抛光面和棱角不直接露在外面，减少了加工过程中的摩擦和磕碰，克服了酸钇镥晶体长方体器件在加工中表面光洁度容易被破坏、棱角容易产生崩边的问题，提高了加工效率和产品合格率，降低了产品成本。In view of the above deficiencies in the prior art, the present invention provides a processing method for a cuboid device of yttrium lutetium silicate crystal. In this method, the yttrium lutetium silicate crystal is cut into a sheet-shaped rough blank, and two parallel and opposite large surfaces of the sheet-shaped blank are processed first, and then the processed two large surfaces are coated with protective paint, and then the coated protective paint The sheet-shaped blank is glued to the cuboid for cutting, and then the new cutting surface is processed, and the processed new cutting surface is coated with protective paint, and then the newly cut blank is glued to the cuboid for the remaining two surfaces. processing. The processing method of the yttrium lutetium crystal cuboid device performs face-by-face intensive cutting and face-by-face intensive processing of each face of the yttrium lutetium crystal cuboid device blank, and protects the processed face after face-by-face processing. During the processing, each device is bonded to each other and protects each other. The processed polished surface and edges are not directly exposed, which reduces the friction and bumps during the processing, and overcomes the surface roughness of the yttrium lutetium crystal cuboid device during processing. Destruction, edges and corners are prone to edge chipping, which improves processing efficiency and product qualification rate, and reduces product cost.
本发明的技术方案如下：Technical scheme of the present invention is as follows:
一种硅酸钇镥晶体长方体器件的加工方法，包括步骤：A processing method for a yttrium lutetium silicate crystal cuboid device, comprising the steps of:
S1：通过切割硅酸钇镥晶体获得片状毛坯料A；S1: Obtain flake-shaped rough material A by cutting yttrium-lutetium silicate crystal;
S2：通过加工片状毛坯料A的两个平行相对的切割面a获得片状毛坯料A1；S2: Obtain the sheet-shaped blank A1 by processing two parallel and opposite cutting surfaces a of the sheet-shaped blank A;
S3：通过在片状毛坯料A1的两个加工面上a1涂上保护材料获得片状毛坯料A2；S3: obtaining the sheet-shaped blank A2 by coating the protective material on the two processing surfaces a1 of the sheet-shaped blank A1;
S4：通过用粘结材料P将m个片状毛坯料A2以加工面a1对应相贴的方式依次相粘结获得长方体毛坯料B，m为自然数且m≥2；S4: Obtain a cuboid blank B by sequentially bonding m sheet-shaped blanks A2 with the bonding material P in such a way that the processing surface a1 corresponds to each other, m is a natural number and m≥2;
S5：通过沿垂直于加工面a1方向并以间隔相等的方式切割长方体毛坯料B获得n个片状毛坯料B1，n为自然数且n≥2；S5: Obtain n sheet-shaped blanks B1 by cutting the cuboid blanks B in a direction perpendicular to the processing surface a1 and at equal intervals, where n is a natural number and n≥2;
S6：通过加工片状毛坯料B1的两个平行相对的切割面b获得片状毛坯料B2；S6: obtaining the sheet-shaped blank B2 by processing two parallel and opposite cutting surfaces b of the sheet-shaped blank B1;
S7：通过在片状毛坯料B2的加工面上b1涂上保护材料获得片状毛坯料B3；S7: obtaining a sheet-shaped blank B3 by coating a protective material on the processed surface b1 of the sheet-shaped blank B2;
S8：通过用粘结材料Q将k个片状毛坯料B3以加工面b1对应相贴的方式依次相粘结获得长方体毛坯料B4，k为自然数且2≤k≤n；S8: Obtain a rectangular parallelepiped blank B4 by sequentially bonding k sheet-shaped blanks B3 with the bonding material Q so that the processing surface b1 corresponds to each other, k is a natural number and 2≤k≤n;
S9：通过加工长方体毛坯料B4的两个未涂保护材料的面获得长方体毛坯料B5；S9: obtaining the rectangular parallelepiped blank B5 by processing two surfaces of the rectangular parallelepiped blank B4 not coated with protective material;
S10：通过清洗除去长方体毛坯料B5中的保护材料、粘结材料P和粘结材料Q获得m×k个硅酸钇镥晶体长方体器件，加工完毕。S10: Cleaning and removing the protective material, bonding material P and bonding material Q in the cuboid blank B5 to obtain m×k cuboid devices of yttrium lutetium silicate crystal, and the processing is completed.
优选的，步骤S2、S6、S9中的所述加工依次为上盘、研磨、抛光、下盘。Preferably, the processing in steps S2, S6, and S9 is sequentially upper plate, grinding, polishing, and lower plate.
优选的，上盘过程中以熔点在50摄氏度以下的粘结蜡为粘结材料。Preferably, the bonding wax with a melting point below 50 degrees Celsius is used as the bonding material during the loading process.
优选的，步骤S3、S7中的保护材料为保护漆。Preferably, the protective material in steps S3 and S7 is protective paint.
优选的，步骤S4中的粘结材料P为熔点在100摄氏度以上的粘结蜡。Preferably, the bonding material P in step S4 is bonding wax with a melting point above 100 degrees Celsius.
优选的，步骤S4中的粘结材料Q为熔点在70摄氏度以下的粘结蜡。Preferably, the bonding material Q in step S4 is bonding wax with a melting point below 70 degrees Celsius.
与现有技术相比，本发明的有益效果：Compared with prior art, the beneficial effect of the present invention:
该酸钇镥晶体长方体器件的加工方法通过对酸钇镥晶体长方体器件毛坯料的各面进行集中切割和集中加工，并在加工后即对已加工面进行保护。加工过程中各器件互相粘结，相互保护，加工好的抛光面和棱角不直接露在外面，减少了加工过程中的摩擦和磕碰，克服了酸钇镥晶体长方体器件在加工中表面光洁度容易被破坏、棱角容易产生崩边的问题，提高了加工效率和产品合格率，降低了产品成本。The processing method of the cuboid device of the yttrium lutetium crystal is to perform centralized cutting and processing on each surface of the blank of the cuboid device of the yttrium lutetium crystal, and protect the processed surface after processing. During the processing, each device is bonded to each other and protects each other. The processed polished surface and edges are not directly exposed, which reduces friction and bumps during processing, and overcomes the surface roughness of the yttrium lutetium crystal cuboid device during processing. Destruction, edges and corners are prone to edge chipping, which improves processing efficiency and product qualification rate, and reduces product cost.
附图说明Description of drawings
图1为本发明一种加工硅酸钇镥晶体长方体器件的方法的工艺流程图；Fig. 1 is a process flow diagram of a method for processing yttrium lutetium silicate crystal cuboid device of the present invention;
图2为本发明一种加工硅酸钇镥晶体长方体器件的方法的长方体器件成品示意图；Fig. 2 is the cuboid device finished schematic diagram of a kind of method of processing yttrium lutetium silicate crystal cuboid device of the present invention;
图3为本发明一种加工硅酸钇镥晶体长方体器件的方法的晶体长片毛坯示意图；Fig. 3 is a schematic diagram of the long crystal blank of a method for processing yttrium lutetium silicate crystal cuboid device of the present invention;
图4为本发明一种加工硅酸钇镥晶体长方体器件的方法的抛光好的长片晶体粘成长方体示意图；Fig. 4 is a kind of method of processing yttrium lutetium silicate crystal cuboid device of the present invention the sticky cuboid schematic diagram of the polished long slice crystal;
图5为本发明一种加工硅酸钇镥晶体长方体器件的方法的切割后晶体长片示意图；Fig. 5 is a schematic diagram of long crystal slices after cutting of a method for processing yttrium lutetium silicate crystal cuboid device of the present invention;
图6为本发明一种加工硅酸钇镥晶体长方体器件的方法的抛光好的切割后的晶体长片粘成长方体示意图；Fig. 6 is a kind of method for processing the yttrium lutetium silicate crystal cuboid device of the present invention, the crystal long slice sticking cuboid schematic diagram after cutting after polishing;
上述图1-图6中：1为硅酸钇镥晶体长方形器件，2为晶体长片，3为晶体长片上表面，4为晶体长片下表面，5为切割后的晶体长片上表面，6为切割后的晶体长片下表面，7为抛光好的切割后的晶体长片粘成长方体的上表面，8为抛光好的切割后的晶体长片粘成长方体的下表面，9 为切割好的晶体长片，10为加工好切割面的长片粘好的长方体，11为加工好的两个大面的长片粘成的长方体。Among the above-mentioned Figures 1-6: 1 is a rectangular device of yttrium lutetium silicate crystal, 2 is a long crystal piece, 3 is the upper surface of a long crystal piece, 4 is the lower surface of a long crystal piece, 5 is the upper surface of a long crystal piece after cutting, 6 is the lower surface of the cut crystal long piece, 7 is the polished long crystal long piece stuck to the upper surface of the cuboid, 8 is the polished cut crystal long piece stuck to the lower surface of the cuboid, and 9 is the cut crystal long piece. The crystal long piece, 10 is the cuboid that the long piece of processing cut surface is glued into, and 11 is the cuboid that the long piece of processing two large faces is glued into.
具体实施方式：Detailed ways:
下面参照附图对本发明做进一步描述。The present invention will be further described below with reference to the accompanying drawings.
实施例1Example 1
加工硅酸钇镥晶体长方体器件的方法的工艺流程图如图1所示。The process flow chart of the method for processing the cuboid device of yttrium lutetium silicate crystal is shown in FIG. 1 .
如图2所示，以尺寸规格4×4×30mm硅酸钇镥晶体长方体器件1为样件，样件数量为500 个。As shown in FIG. 2 , the cuboid device 1 of yttrium-lutetium silicate crystal with a size of 4×4×30 mm is used as a sample, and the number of samples is 500.
如图3所示，将硅酸钇镥晶体切成厚度4.5×31×50mm晶体长片2，按常规研磨、抛光方法把晶体长片2的两个大面3和4加工好，加工好的晶体长片2片厚为4.0-4.1mm，把加工好的晶体长2清洗干净，放在转运盘中备用。As shown in Figure 3, the yttrium lutetium silicate crystal is cut into a long crystal piece 2 with a thickness of 4.5×31×50 mm, and the two large faces 3 and 4 of the long crystal piece 2 are processed according to conventional grinding and polishing methods. The thickness of 2 long crystal slices is 4.0-4.1 mm. Clean the processed crystal slices 2 and put them in the transfer tray for later use.
如图4所示，将加工好的晶体长片2第一大面3和第二大面4分别涂上保护漆，在加热平台上用直角靠体把10个已涂保护漆的晶体长片2用高温蜡，最好是熔点为100摄氏度的高温蜡，粘成一大长方体11，共粘5组。As shown in Figure 4, the first large surface 3 and the second large surface 4 of the processed crystal long piece 2 are coated with protective paint respectively, and 10 long crystal long pieces coated with protective paint are placed on the heating platform with a right-angle support body. 2 with high-temperature wax, preferably melting point is the high-temperature wax of 100 degrees Celsius, sticks into a big cuboid 11, sticks 5 groups altogether.
如图5所示，将粘好的晶体长片2组成的长方体11在金刚石线切割机上切割成片厚4.5mm 的长片9，每组切10片。按常规研磨、抛光方法把切割好的晶体长片9的两个大面5和6加工好，上盘时采用低温粘结蜡，最好是50摄氏度的低温粘结蜡，上盘加工好的晶体长片片厚为 4.0-4.1mm。As shown in FIG. 5 , the cuboid 11 composed of the bonded crystal long pieces 2 is cut into long pieces 9 with a thickness of 4.5 mm on a diamond wire cutting machine, and each group is cut into 10 pieces. Process the two large faces 5 and 6 of the cut crystal long piece 9 according to conventional grinding and polishing methods, and use low-temperature bonding wax, preferably 50 degrees centigrade low-temperature bonding wax, when loading the plate. The thickness of long crystal slices is 4.0-4.1mm.
如图6所示，将长片9的两个抛光好的大面涂上保护漆，在加热平台上用直角靠体，采用粘结温度较高的粘结蜡，最好是熔点70摄氏度的粘结蜡，粘成长方体10，10片一组，共粘结五组。将粘好的长方体10在加热平台上用低熔点粘结蜡，最好是熔点为50摄氏度的粘结蜡上盘，之后按常规研磨、抛光方法加工好7面和8面，加工好的长方体厚度30.0-30.1mm。As shown in Figure 6, the two polished large surfaces of the long piece 9 are coated with protective paint, and the body is placed at a right angle on the heating platform, and the bonding wax with a higher bonding temperature is used, preferably with a melting point of 70 degrees Celsius. Adhesive wax, sticking 10 cuboids, 10 pieces in one group, five groups in total. Put the sticky cuboid 10 on the heating platform with a low-melting point bonding wax, preferably a bonding wax with a melting point of 50 degrees Celsius, and then process the 7 and 8 sides according to conventional grinding and polishing methods, and the processed cuboid Thickness 30.0-30.1mm.
加工完毕后，将长方体10在加热平台上下盘，之后进行清洗并检验产品的加工质量。After processing, put the cuboid 10 on and off the heating platform, then clean and check the processing quality of the product.
测试方法：将加工后的硅酸钇镥长方体器件在暗室中，在60瓦白炽灯下用10倍放大镜检查光洁度，用Hi-Marc-60激光平面干涉仪检测平面度；Test method: Put the processed yttrium-lutetium silicate cuboid device in a dark room, check the smoothness with a 10-fold magnifying glass under a 60-watt incandescent lamp, and use a Hi-Marc-60 laser plane interferometer to detect the flatness;
测试参数：PZT移相，测试波长：632.8nm，测试分辨率：512*512Pix，0.290mm/Pix，用比较测角仪检查平行度；Test parameters: PZT phase shift, test wavelength: 632.8nm, test resolution: 512*512Pix, 0.290mm/Pix, check the parallelism with a comparison goniometer;
测试结果：PV值小于0.25λ，平行度小于20秒，光洁度Ⅰ-Ⅱ级，500片只有8片光洁度不符合要求，7片有崩边，其余485片均符合加工技术要求，合格率97％。Test results: the PV value is less than 0.25λ, the parallelism is less than 20 seconds, and the smoothness is grade I-II. Of the 500 pieces, only 8 pieces do not meet the requirements, and 7 pieces have edge chipping. The remaining 485 pieces meet the processing technical requirements, and the pass rate is 97%. .
本发明提供的一种酸钇镥晶体长方体器件的加工方法，通过对酸钇镥晶体长方体器件毛坯料的各面进行逐面集中切割和逐面集中加工提高了加工效率；加工过程中各器件互相粘结，相互保护，加工好的抛光面和棱角不直接露在外面，减少了加工过程中的摩擦和磕碰，克服了酸钇镥晶体长方体器件在加工中表面光洁度容易被破坏、棱角容易产生崩边的问题，提高了产品合格率，降低了产品成本。The processing method of a kind of yttrium lutetium crystal rectangular parallelepiped device provided by the present invention improves the processing efficiency through face-by-face concentrated cutting and face-by-face centralized processing of each face of the yttrium lutetium crystal rectangular parallelepiped device blank; Adhesion, mutual protection, the processed polished surface and edges are not directly exposed, which reduces friction and bumps during processing, and overcomes the surface roughness of yttrium lutetium crystal cuboid devices that are easily damaged during processing, and the edges and corners are prone to collapse Side problems, improve product qualification rate, reduce product cost.
应当理解的是，本发明的应用不限于上述的举例，对本领域正常技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。It should be understood that the application of the present invention is not limited to the above examples, and those skilled in the art can make improvements or transformations according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.
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