CN108247874A - A kind of processing method of yttrium luetcium silicate crystal cuboid device - Google Patents
A kind of processing method of yttrium luetcium silicate crystal cuboid device Download PDFInfo
- Publication number
- CN108247874A CN108247874A CN201711305351.3A CN201711305351A CN108247874A CN 108247874 A CN108247874 A CN 108247874A CN 201711305351 A CN201711305351 A CN 201711305351A CN 108247874 A CN108247874 A CN 108247874A
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- Prior art keywords
- cuboid
- slug
- luetcium silicate
- silicate crystal
- yttrium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a kind of processing methods of yttrium luetcium silicate crystal cuboid device.Yttrium luetcium silicate crystal is cut into sheet blank material by this method; first process two parallel opposite big faces of slug material; protective paint is coated into process two big face again; the slug material for having applied protective paint cuboid is sticked into later to be cut; reprocess new cut surface; protective paint is coated on finished new cut surface, the blank material newly cut, which is sticked into cuboid, again later is processed remaining two faces.Each device is adhered to one another in process; mutually protection; the burnishing surface and corner angle processed is not exposed directly; reduce the friction in process and collide with; overcome that sour yttrium lutetium crystal cuboid device work in-process surface smoothness is more easily damaged, corner angle easily lead to the problem of chipping; the processing efficiency and product qualification rate of sour yttrium lutetium crystal cuboid device are improved, reduces product cost.
Description
Technical field
The present invention relates to the manufacture field of yttrium luetcium silicate crystal cuboid device more particularly to a kind of yttrium luetcium silicate crystal are long
The processing method of cube device.
Background technology
Yttrium luetcium silicate crystal (LYSO) has excellent scintillation properties, is had a wide range of applications in multiple fields.Yttrium silicate
Lutetium quartz crystal device is more demanding to processing technology, needs six mirror polish, it is impossible to have edge damage can not bevelling.Existing yttrium luetcium silicate
The processing method of cuboid device is that yttrium luetcium silicate crystal is directly cut to yttrium luetcium silicate cuboid device blank, then upper disk one by one
Process six faces.This processing method causes manufactured face and corner angle to be exposed to outside, is easy to cause and is exposed to outer having added
The problems such as surface smoothness of the yttrium luetcium silicate cuboid device of work is destroyed, corner angle generate chipping, seriously affects the conjunction of product
Lattice rate and processing efficiency is low.
Invention content
In view of above-mentioned deficiencies of the prior art, the present invention provides a kind of processing sides of yttrium luetcium silicate crystal cuboid device
Method.Yttrium luetcium silicate crystal is cut into sheet blank material by this method, first processes two parallel opposite big faces of slug material, then
Protective paint is coated into process two big face, the slug material for having applied protective paint, which is sticked into cuboid, later is cut,
New cut surface is reprocessed, protective paint is coated on finished new cut surface, the blank material newly cut is sticked into length again later
Cube is processed remaining two faces.The processing method of the acid yttrium lutetium crystal cuboid device is to sour yttrium lutetium crystal cuboid
Each face of device blank material carries out concentrating cutting and by face concentrated processing by face, and carry out machined surface after processing by face
Protection.Each device is adhered to one another in process, mutually protects, and the burnishing surface and corner angle processed is not exposed directly, subtracts
Lack the friction in process and collided with, overcome sour yttrium lutetium crystal cuboid device work in-process surface smoothness easily quilt
Destruction, corner angle easily lead to the problem of chipping, improve processing efficiency and product qualification rate, reduce product cost.
Technical scheme is as follows：
A kind of processing method of yttrium luetcium silicate crystal cuboid device, including step：
S1：Slug material A is obtained by cutting yttrium luetcium silicate crystal；
S2：Slug material A1 is obtained by two that process slug material A parallel opposite cut surface a；
S3：By on two machined surfaces of slug material A1 a1 coat protection materials and obtain slug material A2；
S4：It is binding material P that m slug material A2 is bonding successively in a manner that machined surface a1 correspondences are affixed
It is natural number and m >=2 to obtain cuboid blank material B, m；
S5：By a along cuboid blank material B acquisitions n is cut perpendicular to machined surface a1 directions and in a manner that interval is equal
Slug material B1, n are natural number and n >=2；
S6：Slug material B2 is obtained by two that process slug material B1 parallel opposite cut surface b；
S7：By on the machined surface of slug material B2 b1 coat protection materials and obtain slug material B3；
S8：It is binding material Q that k slug material B3 is bonding successively in a manner that machined surface b1 correspondences are affixed
It is natural number and 2≤k≤n to obtain cuboid blank material B4, k；
S9：Cuboid blank material B5 is obtained by two that the process cuboid blank material B4 faces for being not coated with protection materials；
S10：Protection materials, binding material P and the binding material Q removed by cleaning in cuboid blank material B5 obtains m
× k yttrium luetcium silicate crystal cuboid device, completion of processing.
Preferably, processing step S2, in S6, S9 is followed successively by disk, grinding, polishing, lower wall.
Preferably, using bonding wax of the fusing point below 50 degrees Celsius as binding material during upper disk.
Preferably, step S3, the protection materials in S7 are protective paint.
Preferably, the binding material P in step S4 is bonding wax of the fusing point at 100 degrees Celsius or more.
Preferably, the binding material Q in step S4 is bonding wax of the fusing point below 70 degrees Celsius.
Compared with prior art, beneficial effects of the present invention：
The processing method of the acid yttrium lutetium crystal cuboid device passes through to each of sour yttrium lutetium crystal cuboid device blank material
Face carries out concentrating cutting and concentrated processing, and after processing protect machined surface.Each device is mutual in process
It bonds, mutually protects, the burnishing surface and corner angle processed is not exposed directly, reduces the friction in process and knock
It touches, overcomes that sour yttrium lutetium crystal cuboid device work in-process surface smoothness is more easily damaged, corner angle easily generate chipping
Problem improves processing efficiency and product qualification rate, reduces product cost.
Description of the drawings
Fig. 1 is a kind of process flow chart for the method for processing yttrium luetcium silicate crystal cuboid device of the present invention；
Fig. 2 is a kind of cuboid device finished product signal of method for processing yttrium luetcium silicate crystal cuboid device of the present invention
Figure；
Fig. 3 is a kind of crystal lengthy motion picture blank schematic diagram for the method for processing yttrium luetcium silicate crystal cuboid device of the present invention；
Fig. 4 is that a kind of polished lengthy motion picture crystal for the method for processing yttrium luetcium silicate crystal cuboid device of the present invention sticks into
Cuboid schematic diagram；
Fig. 5 is crystal lengthy motion picture signal after a kind of cutting for the method for processing yttrium luetcium silicate crystal cuboid device of the present invention
Figure；
Fig. 6 is the crystal after a kind of polished cutting for the method for processing yttrium luetcium silicate crystal cuboid device of the present invention
Lengthy motion picture sticks into cuboid schematic diagram；
In above-mentioned Fig. 1-Fig. 6：1 is yttrium luetcium silicate crystal rectangle device, and 2 be crystal lengthy motion picture, and 3 be crystal lengthy motion picture upper table
Face, 4 be crystal lengthy motion picture lower surface, and 5 be the crystal lengthy motion picture upper surface after cutting, and 6 be the crystal lengthy motion picture lower surface after cutting, and 7 are
Crystal lengthy motion picture after polished cutting sticks into the upper surface of cuboid, and 8 stick into length for the crystal lengthy motion picture after polished cutting
The lower surface of cube, 9 be the crystal lengthy motion picture of well cutting, and 10 be to process the cuboid that the lengthy motion picture of cut surface glues, and 11 be processing
The cuboid that the lengthy motion picture in good two big face sticks into.
Specific embodiment：
The present invention is described further with reference to the accompanying drawings.
Embodiment 1
The process flow chart for processing the method for yttrium luetcium silicate crystal cuboid device is as shown in Figure 1.
As shown in Fig. 2, with dimensions 4 × 4 × 30mm yttrium luetcium silicate crystal cuboids device 1 for exemplar, exemplar quantity
It is 500.
As shown in figure 3, yttrium luetcium silicate crystal is cut into thickness 4.5 × 31 × 50mm crystal lengthy motion picture 2, routinely grinds, throw
Light method processes the two big face 3 and 4 of crystal lengthy motion picture 2, and 2 thickness of the crystal lengthy motion picture processed are 4.0-4.1mm, processing
Good crystal length 2 cleans up, and is placed on spare in transhipment disk.
As shown in figure 4, the 2 first big face 3 of crystal lengthy motion picture processed and second largest face 4 are coated protective paint respectively, adding
The high temperature wax of crystal lengthy motion picture 2 for having applied protective paint 10 by body with right angle on hot platform, preferably fusing point are 100 degrees Celsius
High temperature wax sticks into a big cuboid 11, glues 5 groups altogether.
As shown in figure 5, the cuboid 11 that the crystal lengthy motion picture 2 glued is formed dicing on diamond wire saw machine is thick
The lengthy motion picture 9 of 4.5mm, every group is cut 10.Routinely grinding and polishing method is the two big face 5 and 6 of the crystal lengthy motion picture 9 of well cutting
It processes, using low temperature bonding wax, preferably 50 degrees Celsius of low temperature bonding wax, the crystal lengthy motion picture piece that upper disk processes during upper disk
Thickness is 4.0-4.1mm.
As shown in fig. 6, two of lengthy motion picture 9 polished big faces are coated protective paint, body is leaned on right angle on heating platform,
Using the higher bonding wax of sticking temperature, preferably the bonding wax of 70 degrees Celsius of fusing point, 10,10 one group of cuboid is sticked into, altogether
Bond five groups.By the cuboid 10 glued with eutectic point bonding wax on heating platform, preferably fusing point is 50 degrees Celsius viscous
Disk in wax deposition, routinely grinding and polishing method processes 7 faces and 8 faces later, the rectangular body thickness 30.0-30.1mm processed.
After completion of processing, by cuboid 10 in heating platform upper lower burrs, the processing matter of product is cleaned and examined later
Amount.
Test method：By the yttrium luetcium silicate cuboid device after processing in darkroom, put under 60 watts of incandescent lamps with 10 times
Big spectroscopy finish detects flatness with Hi-Marc-60 laser plane interferometers；
Test parameter：PZT phase shifts, test wavelength：632.8nm, measuring resolution：512*512Pix, 0.290mm/Pix,
The depth of parallelism is checked with comparison goniometer；
Test result：PV values are less than 0.25 λ, and the depth of parallelism is less than 20 seconds, I-II grade of finish, 500 only 8 finish
Undesirable, 7 have chipping, remaining 485 meet processing technology requirement, qualification rate 97%.
The processing method of a kind of sour yttrium lutetium crystal cuboid device provided by the invention, by sour yttrium lutetium crystal cuboid
Each face of device blank material carries out concentrating cutting by face and improves processing efficiency by face concentrated processing；Each device in process
It is adhered to one another, mutually protect, the burnishing surface and corner angle processed be not exposed directly, reduce friction in process and
It collides with, overcomes that sour yttrium lutetium crystal cuboid device work in-process surface smoothness is more easily damaged, corner angle easily generate chipping
The problem of, product qualification rate is improved, reduces product cost.
It should be understood that the application of the present invention is not limited to the above, it, can for the normal technician of this field
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (6)
1. a kind of processing method of yttrium luetcium silicate crystal cuboid device, which is characterized in that including step：
S1：Slug material A is obtained by cutting yttrium luetcium silicate crystal；
S2：Slug material A1 is obtained by two that process the slug material A parallel opposite cut surface a；
S3：By on two machined surfaces of the slug material A1 a1 coat protection materials and obtain slug material A2；
S4：It is binding material P that the m slug material A2 are bonding successively in a manner that machined surface a1 correspondences are affixed
It is natural number and m >=2 to obtain cuboid blank material B, m；
S5：The cuboid blank material B is cut by edge perpendicular to the machined surface a1 directions and in a manner that interval is equal to obtain
It is natural number and n >=2 to obtain n slug material B1, n；
S6：Slug material B2 is obtained by two that process the slug material B1 parallel opposite cut surface b；
S7：Slug material B3 is obtained by coating the protection materials in two machined surface b1 of the slug material B2；
S8：Binding material Q by k slug material B3 the phase successively in a manner that machined surface b1 correspondences are affixed
It is natural number and 2≤k≤n to bond and obtain cuboid blank material B4, k；
S9：Cuboid blank material is obtained by two that process the cuboid blank material B4 faces for being not coated with the protection materials
B5；
S10：By cleaning the protection materials removed in the cuboid blank material B5, the binding material P and described viscous
It ties material Q and obtains m × k yttrium luetcium silicate crystal cuboid device, completion of processing.
2. the processing method of a kind of yttrium luetcium silicate crystal cuboid device according to claim 1, which is characterized in that described
Step S2, the processing in S6, S9 is followed successively by disk, grinding, polishing, lower wall.
3. the processing method of a kind of yttrium luetcium silicate crystal cuboid device according to claim 2, which is characterized in that described
Using bonding wax of the fusing point below 50 degrees Celsius as binding material during upper disk.
4. the processing method of a kind of yttrium luetcium silicate crystal cuboid device according to claim 1, which is characterized in that described
Step S3, the protection materials in S7 are protective paint.
5. the processing method of a kind of yttrium luetcium silicate crystal cuboid device according to claim 1, which is characterized in that described
The binding material P in step S4 is bonding wax of the fusing point at 100 degrees Celsius or more.
6. the processing method of a kind of yttrium luetcium silicate crystal cuboid device according to claim 1, which is characterized in that described
The binding material Q in step S4 is bonding wax of the fusing point below 70 degrees Celsius.
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|---|---|---|---|
| CN201711305351.3A CN108247874B (en) | 2017-12-11 | 2017-12-11 | A kind of processing method of yttrium luetcium silicate crystal cuboid device |
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| CN201711305351.3A CN108247874B (en) | 2017-12-11 | 2017-12-11 | A kind of processing method of yttrium luetcium silicate crystal cuboid device |
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| CN108247874A true CN108247874A (en) | 2018-07-06 |
| CN108247874B CN108247874B (en) | 2019-08-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111113703A (en) * | 2019-12-20 | 2020-05-08 | 上海新漫晶体材料科技有限公司 | Manufacturing and protecting method of LYSO wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102729116A (en) * | 2012-06-20 | 2012-10-17 | 大连淡宁实业发展有限公司 | Machining process for batched machining in multi-surface polishing of sapphire single-crystal cuboid window |
| JP2014085223A (en) * | 2012-10-24 | 2014-05-12 | Hitachi Metals Ltd | Method for manufacturing scintillator array |
| CN105807309A (en) * | 2016-03-11 | 2016-07-27 | 华中科技大学 | Method for preparing scintillation crystal detection unit |
| CN107390256A (en) * | 2017-06-09 | 2017-11-24 | 上海翌波光电科技股份有限公司 | A kind of new cesium iodide,crystal crystal array makes encapsulation technology |
-
2017
- 2017-12-11 CN CN201711305351.3A patent/CN108247874B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102729116A (en) * | 2012-06-20 | 2012-10-17 | 大连淡宁实业发展有限公司 | Machining process for batched machining in multi-surface polishing of sapphire single-crystal cuboid window |
| JP2014085223A (en) * | 2012-10-24 | 2014-05-12 | Hitachi Metals Ltd | Method for manufacturing scintillator array |
| CN105807309A (en) * | 2016-03-11 | 2016-07-27 | 华中科技大学 | Method for preparing scintillation crystal detection unit |
| CN107390256A (en) * | 2017-06-09 | 2017-11-24 | 上海翌波光电科技股份有限公司 | A kind of new cesium iodide,crystal crystal array makes encapsulation technology |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111113703A (en) * | 2019-12-20 | 2020-05-08 | 上海新漫晶体材料科技有限公司 | Manufacturing and protecting method of LYSO wafer |
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| CN108247874B (en) | 2019-08-27 |
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