CN108242463A - A kind of silicon carbide superjunction diode and preparation method thereof - Google Patents
A kind of silicon carbide superjunction diode and preparation method thereof Download PDFInfo
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- CN108242463A CN108242463A CN201611224609.2A CN201611224609A CN108242463A CN 108242463 A CN108242463 A CN 108242463A CN 201611224609 A CN201611224609 A CN 201611224609A CN 108242463 A CN108242463 A CN 108242463A
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- silicon carbide
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- epitaxial film
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 108
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 150000002500 ions Chemical class 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000002347 injection Methods 0.000 claims abstract description 25
- 239000007924 injection Substances 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims description 76
- 238000005468 ion implantation Methods 0.000 claims description 27
- -1 Nitrogen ion Chemical class 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 6
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229940090044 injection Drugs 0.000 abstract description 20
- 239000000243 solution Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- 239000012153 distilled water Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229960002163 hydrogen peroxide Drugs 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005404 monopole Effects 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229940032330 sulfuric acid Drugs 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Abstract
The present invention provides a kind of silicon carbide superjunction diode and preparation method thereof, the front that the preparation method is included in silicon carbide substrates forms epitaxial film, and inject ion to the upper surface of epitaxial film using high temperature energetic ion method for implanting, forms super-junction structure；Respectively in the upper surface of epitaxial film and the back side of silicon carbide substrates deposit metal, the first metal electrode and the second metal electrode are formed.Compared with prior art, a kind of silicon carbide superjunction diode provided by the invention and preparation method thereof, the voltage endurance capability of silicon carbide superjunction diode can be made only related to its epitaxial film by increasing super-junction structure, it is unrelated with the doping concentration of epitaxial film, the on state resistance of silicon carbide superjunction diode current flow can be reduced by improving the doping concentration of epitaxial film and the method in introducing hole.
Description
Technical field
The present invention relates to technical field of semiconductor device, and in particular to a kind of silicon carbide superjunction diode and its preparation side
Method.
Background technology
Carbofrax material has broad-band gap, high breakdown field strength, high heat conductance, high saturated electrons migration rate and fabulous
The characteristics such as physical and chemical stability, suitable for high temperature, high frequency, the work of high-power and extreme environment.Silicon carbide diode packet
Two major class of monopole type device and bipolar device is included, monopole type device refers to there was only a kind of current-carrying subconductivity in the operating condition
Device, such as Schottky diode and junction barrier schottky diode；Bipolar device refer in the operating condition there are two types of
The device of current-carrying subconductivity, such as PiN diodes.Monopole type device cut-in voltage is small, but when preparing high tension apparatus, thickness of drifting about
Degree increases therewith, on state resistance is caused to increase, device on-state loss is larger；Bipolar device has the conductivity modulation effect of few son
On state resistance can be reduced, but since the self-built potential difference of the PN junction of silicon carbide is larger, cut-in voltage is up to 3V, also results in
Larger on-state loss.
Invention content
In order to meet the defects of overcoming the prior art, the present invention provides a kind of silicon carbide superjunction diode and its preparation sides
Method.
In a first aspect, a kind of technical solution of the preparation method of silicon carbide superjunction diode is in the present invention：
The preparation method includes：
Epitaxial film is formed, and thin to the extension using high temperature energetic ion method for implanting in the front of silicon carbide substrates
The upper surface injection ion of film, forms super-junction structure；
Respectively in the upper surface of the epitaxial film and the back side of silicon carbide substrates deposit metal, the first metal electrode is formed
With the second metal electrode.
Further, an optimal technical scheme provided by the invention is：It is described to use high temperature energetic ion method for implanting
Include before to the upper surface injection ion of epitaxial film：
The silicon carbide substrates and epitaxial film are cleaned using RCA standard cleanings method；
The upper surface of epitaxial film after the cleaning forms ion implantation mask layer；
The upper surface of the ion implantation mask layer formed ion implanting window, and by the ion implanting window to
Epitaxial film injects ion.
Further, an optimal technical scheme provided by the invention is：It is described to use high temperature energetic ion method for implanting
Include to the upper surface injection ion of epitaxial film：It is noted using single ion injection method or multistep ion implantation to epitaxial film
Enter ion.
Further, an optimal technical scheme provided by the invention is：
The temperature of the high temperature energetic ion method for implanting is 0~1000 DEG C, and ion implantation energy is 1kev~500MeV,
Ion implantation dosage is 1 × 1010-1×1016(atom/cm-2)。
Second aspect, the present invention in a kind of technical solution of silicon carbide superjunction diode be：
The silicon carbide superjunction diode includes：
Silicon carbide substrates；
Epitaxial film is arranged on the front of the silicon carbide substrates；
Super-junction structure is arranged in the epitaxial film；The super-junction structure is passes through high temperature energetic ion injection side
The super-junction structure that the upper surface injection ion of epitaxial film described in normal direction is formed；
First metal electrode is arranged on the upper surface of the epitaxial film；
Second metal electrode is arranged on the back side of the silicon carbide substrates.
Further, an optimal technical scheme provided by the invention is：
The silicon carbide substrates are N-shaped or p-type silicon carbide, and the silicon carbide is 4H-SiC or 6H-SiC；
The thickness of the epitaxial film is 0.1 μm -500 μm, and doping concentration is 1 × 1013-1×1021cm-3；
The Doped ions of the super-junction structure be Nitrogen ion, phosphonium ion, aluminium ion or boron ion, the Doped ions it is dense
Spend is 1 × 1010-1×1016cm-2。
Further, an optimal technical scheme provided by the invention is：The silicon carbide superjunction diode further include from
Sub- injection masking layer is arranged on the upper surface of the epitaxial film；
The ion implantation mask layer includes ion implanting window.
Further, an optimal technical scheme provided by the invention is：
The ion implantation mask layer is the single film layer being made of silicon, silicon oxide compound, silicon-nitrogen compound or metal；
Alternatively,
The ion implantation mask layer is by least two material structures in silicon, silicon oxide compound, silicon-nitrogen compound and metal
Into multi-layer thin film layer；The thickness of each film layer is 0.001~200 μm in the multi-layer thin film layer.
Further, an optimal technical scheme provided by the invention is：
The ion implanting window is interdigital structure or parallel strip or circular ring shape or rectangular, the parallel strip packet
Include multiple parallel rectangles；Alternatively, the ion implanting window is includes the interdigital structure, parallel strip, circular ring shape
With it is rectangular at least two shapes composite figure.
The length and width or radius of the ion implanting window are 0.01 μm~50cm；
Further, an optimal technical scheme provided by the invention is：The silicon carbide superjunction diode is silicon carbide
Schottky diode, silicon carbide junction barrier schottky diodes, silicon carbide mixing PN junction Schottky diode or silicon carbide mixing
PiN junction Schottky diodes.
Compared with the immediate prior art, the beneficial effects of the invention are as follows：
1st, the preparation method of a kind of silicon carbide superjunction diode provided by the invention, using high energy high temperature tension normal direction
Epitaxial film injection ion can form super-junction structure, can make the pressure resistance of silicon carbide superjunction diode by increasing super-junction structure
Ability is only related to its epitaxial film, unrelated with the doping concentration of epitaxial film, can be dense by improving the doping of epitaxial film
Degree and the method for introducing hole reduce the on state resistance of silicon carbide superjunction diode current flow.
2nd, a kind of silicon carbide superjunction diode provided by the invention, including super-junction structure, and super-junction structure can make carbon
The voltage endurance capability of SiClx superjunction diode is only related to its epitaxial film, unrelated with the doping concentration of epitaxial film, therefore can be with
The on state resistance of silicon carbide superjunction diode current flow is reduced by the doping concentration for improving epitaxial film and the method for introducing hole.
Description of the drawings
Fig. 1：The preparation method implementing procedure figure of a kind of silicon carbide superjunction diode in the embodiment of the present invention；
Fig. 2：Epitaxial film schematic diagram in the embodiment of the present invention；
Fig. 3：Intermediate ion injection masking layer schematic diagram of the embodiment of the present invention；
Fig. 4：Intermediate ion of the embodiment of the present invention injects window schematic diagram；
Fig. 5：Super-junction structure schematic diagram in the embodiment of the present invention；
Fig. 6：Silicon carbide superjunction diode cross-sectional view in the embodiment of the present invention；
Fig. 7：The Doped ions concentration distribution schematic diagram of super-junction structure in the embodiment of the present invention；
Wherein, 11：Silicon carbide substrates；12：Epitaxial film；13：Ion implantation mask layer；14：Include ion implanting window
Ion implantation mask layer；15：Super-junction structure；16：First metal electrode；17：Second metal electrode.
Specific embodiment
Purpose, technical scheme and advantage to make the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical solution in the embodiment of the present invention is clearly and completely illustrated, it is clear that described embodiment is
Part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
All other embodiments obtained without making creative work shall fall within the protection scope of the present invention.
Separately below with reference to attached drawing, to a kind of preparation method of silicon carbide superjunction diode provided in an embodiment of the present invention into
Row explanation.
Fig. 1 is a kind of preparation method implementing procedure figure of silicon carbide superjunction diode in the embodiment of the present invention, as shown in the figure,
The present embodiment can prepare silicon carbide superjunction diode as steps described below, specially：
Step S101：Silicon carbide substrates front formed epitaxial film, and using high temperature energetic ion method for implanting to
The upper surface injection ion of the epitaxial film, forms super-junction structure.
Step S102：Respectively in the upper surface of epitaxial film and the back side of silicon carbide substrates deposit metal, the first gold medal is formed
Belong to electrode and the second metal electrode.
Super-junction structure can be formed using high energy high temperature tension normal direction epitaxial film injection ion in the present embodiment, led to
Crossing, which increases super-junction structure, can make the voltage endurance capability of silicon carbide superjunction diode only related to its epitaxial film, with epitaxial film
Doping concentration is unrelated, can reduce by two pole of silicon carbide superjunction by improving the doping concentration of epitaxial film and the method in introducing hole
The on state resistance of pipe conducting.
Further, step S101 can also include the following steps in the present embodiment, specially：
1st, after forming epitaxial film in the front of silicon carbide substrates, using RCA standard cleanings method to silicon carbide substrates and
Epitaxial film is cleaned.RCA standard cleaning methods are briefly described below, specially：
(1) cleaning solution is configured.Wherein, the mixed solution of hydrofluoric acid HF and distilled water H2O, hydrogen fluorine are used in the present embodiment
Sour HF and distilled water H2The ratio of O is 1:10.
(2) with step (1) be configured cleaning solution cleaning sample stent and dry up, silicon carbide sample is fixed on stent
On.
(3) 3# solution is configured, the stent for being fixed with silicon carbide sample is placed in 250 DEG C of 3# solution and cleans 15min, clearly
End is washed later with hot water injection's stent.Wherein, 3# solution is the mixed solution of sulfuric acid and hydrogen peroxide, sulfuric acid and oxydol H2O2
Ratio be 3:1.
(4) 1# solution is configured, after 1# solution is heated to 75~85 DEG C and continues 10~20min, silicon carbide will be fixed with
The stent of sample is placed on 10~20min of cleaning in 1# solution, and cleaning uses hot water injection's stent after terminating.Wherein, 1# solution is
Ammonium hydroxide, oxydol H2O2With distilled water H2The mixed solution of O, ammonium hydroxide, oxydol H2O2With distilled water H2The ratio of O is 1:1:5~
1:1:7。
(5) 2# solution is configured, the stent for being fixed with silicon carbide sample is placed in 2# solution and cleans 15min, cleaning terminates
Hot water injection's stent is used later.Wherein, 2# solution is hydrochloric acid, oxydol H2O2With distilled water H2The mixed solution of O, hydrochloric acid, dioxygen
Water H2O2With distilled water H2The ratio of O is 1:1:5.
(6) 5~10s of stent for being fixed with silicon carbide sample is cleaned with a concentration of 10% hydrofluoric acid HF, to remove carbonization
The oxide layer on silicon sample surface.
(7) the stent 20min for being fixed with silicon carbide sample is cleaned with deionized water.
2nd, the upper surface of epitaxial film after cleaning forms ion implantation mask layer.
3rd, ion implanting window is formed in the upper surface of ion implantation mask layer.
4th, ion is injected to the upper surface of epitaxial film by ion implanting window using high energy high temperature tension method.This
Single ion injection method may be used in embodiment, multistep ion implantation can also be used to inject ion to epitaxial film.Its
In：The temperature of high energy high temperature tension method be 0~1000 DEG C, ion implantation energy be 1kev~500MeV, ion implanting agent
Measure is 1 × 1010-1×1016(atom/cm-2)。
Fig. 7 is the Doped ions concentration distribution schematic diagram of super-junction structure in the embodiment of the present invention, wherein, each Doped ions are dense
The injection condition for spending distribution is as shown in table 1.
Table 1
The present invention also provides a kind of silicon carbide superjunction diode, and provide specific embodiment.
Silicon carbide superjunction diode includes silicon carbide substrates, epitaxial film, super-junction structure, the first metal electricity in the present embodiment
Pole and the second metal electrode.
Wherein, epitaxial film is arranged on the front of silicon carbide substrates, and the first metal electrode is arranged on the upper table of epitaxial film
Face, the second metal electrode are arranged on the back side of silicon carbide substrates, and super-junction structure is arranged in epitaxial film.Superjunction in the present embodiment
Structure is that the super-junction structure of ion formation is injected by the upper surface of high energy high temperature tension normal direction epitaxial film.
Super-junction structure can make the voltage endurance capability of silicon carbide superjunction diode only related to its epitaxial film in the present embodiment,
It is unrelated with the doping concentration of epitaxial film, therefore can be dropped by improving the doping concentration of epitaxial film and the method in introducing hole
The on state resistance of low-carbon SiClx superjunction diode current flow.
Further, it may be p-type silicon carbide, wherein carbon that silicon carbide substrates, which can be N-shaped silicon carbide, in the present embodiment
SiClx may be used as 4H-SiC or 6H-SiC.The thickness of epitaxial film can be 0.1 μm -500 μm, doping concentration for 1 ×
1013-1×1021cm-3.The Doped ions of super-junction structure be Nitrogen ion, phosphonium ion, aluminium ion or boron ion, Doped ions it is dense
Spend is 1 × 1010-1×1016cm-2。
Further, silicon carbide superjunction diode can also include ion implantation mask layer, ion note in the present embodiment
Enter the upper surface that mask layer is arranged on epitaxial film, and including ion implanting window.
Wherein, ion implantation mask layer can be the single thin layer being made of silicon, silicon oxide compound, silicon-nitrogen compound or metal
Film layer, or the multi-layer thin film layer being made of at least two materials in silicon, silicon oxide compound, silicon-nitrogen compound and metal,
The thickness of each film layer is 0.001~200 μm in multi-layer thin film layer.
Ion implanting window can be interdigital structure or parallel strip or circular ring shape or rectangular, or comprising interdigital
Structure, parallel strip, circular ring shape and it is rectangular at least two shapes composite figure.Wherein, parallel strip includes multiple
Parallel rectangle.
The length and width or radius of ion implanting window are 0.01 μm~50cm.
Further, silicon carbide superjunction diode can be SiC schottky diode, silicon carbide knot in the present embodiment
Barrier Schottky diode, silicon carbide mixing PN junction Schottky diode or silicon carbide mixing PiN junction Schottky diodes.
The present invention also provides the preferred embodiment of a silicon carbide superjunction diode, below in conjunction with the accompanying drawings to the silicon carbide
The preparation method of superjunction diode is described in detail.
1st, epitaxial film is prepared
Fig. 2 is epitaxial film schematic diagram in the embodiment of the present invention, as shown in the figure, in silicon carbide substrates 11 in the present embodiment
Front forms epitaxial film 12, and cleaning sic substrate 11 and epitaxial film 12.Wherein：Silicon carbide substrates 11 are N-shaped 4H-
SiC, thickness are 380 μm, and Doped ions are Nitrogen ion N, and doping concentration is 5 × 1018cm-3.Epitaxial film 12 is N-shaped 4H-SiC,
Thickness is 12 μm, and Doped ions are Nitrogen ion N, and doping concentration is 8 × 1018cm-3。
2nd, ion implantation mask layer is prepared
Fig. 3 is intermediate ion injection masking layer schematic diagram of the embodiment of the present invention, as shown in the figure, being splashed in the present embodiment using magnetic control
The method penetrated forms ion implantation mask layer 13 in the upper surface of epitaxial film 12.Wherein：Ion implantation mask layer 13 is by gold
Belong to the single film layer that aluminium Al is formed, thickness is 2 μm.
3rd, ion implanting window is prepared
Fig. 4 injects window schematic diagram for intermediate ion of the embodiment of the present invention, as shown in the figure, in the present embodiment, to ion implanting
Mask layer 13 carries out lithography and etching, forms ion implanting window 14.Wherein：Ion implanting window 14 is the side of 10 μm of 10 μ m
Shape ion implanting window.
4th, super-junction structure is prepared
Fig. 5 is super-junction structure schematic diagram in the embodiment of the present invention, as shown in the figure, using high energy High temperature ion in the present embodiment
Injection method injects aluminium ion Al by ion implanting window 14 to epitaxial film 12, forms super-junction structure 15.
5th, the electrode of silicon carbide superjunction diode is prepared
Fig. 6 is silicon carbide superjunction diode cross-sectional view in the embodiment of the present invention, as shown in the figure, in epitaxial film
Upper surface deposited metal simultaneously carries out the metal layer lithography and etching the first metal electrode 16 of formation, in the back of the body of silicon carbide substrates
Face deposited metal, and lithography and etching is carried out to the metal layer and forms the second metal electrode 17.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of preparation method of silicon carbide superjunction diode, which is characterized in that the preparation method includes：
Epitaxial film is formed in the front of silicon carbide substrates, and uses high temperature energetic ion method for implanting to the epitaxial film
Ion is injected in upper surface, forms super-junction structure；
Respectively in the upper surface of the epitaxial film and the back side of silicon carbide substrates deposit metal, the first metal electrode and the are formed
Two metal electrodes.
2. a kind of preparation method of silicon carbide superjunction diode as described in claim 1, which is characterized in that described to use high temperature
Energetic ion method for implanting includes before to the upper surface injection ion of epitaxial film：
The silicon carbide substrates and epitaxial film are cleaned using RCA standard cleanings method；
The upper surface of epitaxial film after the cleaning forms ion implantation mask layer；
Ion implanting window is formed in the upper surface of the ion implantation mask layer, and by the ion implanting window to extension
Film injects ion.
3. a kind of preparation method of silicon carbide superjunction diode as described in claim 1, which is characterized in that described to use high temperature
Energetic ion method for implanting includes to the upper surface injection ion of epitaxial film：It is noted using single ion injection method or multistep ion
Enter normal direction epitaxial film injection ion.
4. a kind of preparation method of silicon carbide superjunction diode as described in claim 1, which is characterized in that
The temperature of the high temperature energetic ion method for implanting be 0~1000 DEG C, ion implantation energy be 1kev~500MeV, ion
Implantation dosage is 1 × 1010-1×1016(atom/cm-2)。
5. a kind of silicon carbide superjunction diode, which is characterized in that the silicon carbide superjunction diode includes：
Silicon carbide substrates；
Epitaxial film is arranged on the front of the silicon carbide substrates；
Super-junction structure is arranged in the epitaxial film；The super-junction structure be by high temperature energetic ion method for implanting to
The super-junction structure that the upper surface injection ion of the epitaxial film is formed；
First metal electrode is arranged on the upper surface of the epitaxial film；
Second metal electrode is arranged on the back side of the silicon carbide substrates.
6. a kind of silicon carbide superjunction diode as claimed in claim 5, which is characterized in that
The silicon carbide substrates are N-shaped or p-type silicon carbide, and the silicon carbide is 4H-SiC or 6H-SiC；
The thickness of the epitaxial film is 0.1 μm -500 μm, and doping concentration is 1 × 1013-1×1021cm-3；
The Doped ions of the super-junction structure be Nitrogen ion, phosphonium ion, aluminium ion or boron ion, the Doped ions it is a concentration of
1×1010-1×1016cm-2。
7. a kind of silicon carbide superjunction diode as claimed in claim 5, which is characterized in that the silicon carbide superjunction diode is also
Including ion implantation mask layer, it is arranged on the upper surface of the epitaxial film；
The ion implantation mask layer includes ion implanting window.
8. a kind of silicon carbide superjunction diode as claimed in claim 7, which is characterized in that
The ion implantation mask layer is the single film layer being made of silicon, silicon oxide compound, silicon-nitrogen compound or metal；Or
Person,
The ion implantation mask layer is made of at least two materials in silicon, silicon oxide compound, silicon-nitrogen compound and metal
Multi-layer thin film layer；The thickness of each film layer is 0.001~200 μm in the multi-layer thin film layer.
9. a kind of silicon carbide superjunction diode as claimed in claim 7, which is characterized in that
The ion implanting window is interdigital structure or parallel strip or circular ring shape or rectangular, and the parallel strip includes more
A parallel rectangle；Alternatively, the ion implanting window is includes the interdigital structure, parallel strip, circular ring shape and side
The composite figure of at least two shapes in shape.
The length and width or radius of the ion implanting window are 0.01 μm~50cm.
A kind of 10. silicon carbide superjunction diode as claimed in claim 5, which is characterized in that the silicon carbide superjunction diode
For SiC schottky diode, silicon carbide junction barrier schottky diodes, silicon carbide mixing PN junction Schottky diode or carbon
SiClx mixes PiN junction Schottky diodes.
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| CN109473485A (en) * | 2018-12-29 | 2019-03-15 | 重庆伟特森电子科技有限公司 | Silicon carbide diode and preparation method thereof |
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| CN102723357A (en) * | 2012-04-16 | 2012-10-10 | 中国科学院半导体研究所 | Channel-type silicon carbide Schottky diode and manufacturing method for same |
| CN103311274A (en) * | 2013-05-14 | 2013-09-18 | 深圳深爱半导体股份有限公司 | Semiconductor device with non-aligned super junction structure and manufacturing method thereof |
| CN106158983A (en) * | 2015-04-14 | 2016-11-23 | 北大方正集团有限公司 | The manufacture method of a kind of superjunction diode and superjunction diode |
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| CN102723357A (en) * | 2012-04-16 | 2012-10-10 | 中国科学院半导体研究所 | Channel-type silicon carbide Schottky diode and manufacturing method for same |
| CN103311274A (en) * | 2013-05-14 | 2013-09-18 | 深圳深爱半导体股份有限公司 | Semiconductor device with non-aligned super junction structure and manufacturing method thereof |
| CN106158983A (en) * | 2015-04-14 | 2016-11-23 | 北大方正集团有限公司 | The manufacture method of a kind of superjunction diode and superjunction diode |
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| CN109473485A (en) * | 2018-12-29 | 2019-03-15 | 重庆伟特森电子科技有限公司 | Silicon carbide diode and preparation method thereof |
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