CN108242413A - A kind of device and method for being used to that semiconductor chip to be thinned - Google Patents
A kind of device and method for being used to that semiconductor chip to be thinned Download PDFInfo
- Publication number
- CN108242413A CN108242413A CN201611224838.4A CN201611224838A CN108242413A CN 108242413 A CN108242413 A CN 108242413A CN 201611224838 A CN201611224838 A CN 201611224838A CN 108242413 A CN108242413 A CN 108242413A
- Authority
- CN
- China
- Prior art keywords
- substrate
- thinned
- upper cover
- chassis
- seal ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Abstract
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of device for being used to that semiconductor chip to be thinned.Described device includes：Chassis, the chassis are equipped with substrate slot, thinned substrate are treated for placing；Upper cover, the upper cover are hollow ring-type, and the hollow area is less than or equal to the area of the substrate；The upper cover is fixedly connected with chassis, and the substrate is clamped；The substrate treats that thinned one side is exposed by the hollow position of the upper cover.The present invention also provides a kind of methods for semiconductor chip to be thinned.The present invention carries out reduction processing using wet etching to the part that substrate back is exposed, and substrate edge keeps original thickness, plays a supporting role to entire substrate, reduce the breakage of thinned substrate, make entire substrate compatible with existing apparatus for production line, improve productivity, reduce cost.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of device and side for being used to that semiconductor chip to be thinned
Method.
Background technology
In electronic product, such as mobile phone, PC, required semiconductor chip is relatively thin it is generally desirable to basis material, and
During the three-dimension packaging of chip, due to the limitation of size, it is also desirable to the thinner thickness of single layer of chips, while on one single chip
The quantity and density of contained device are more and more, and the calorific value on unit area is also just higher and higher, how by the heat of generation
Amount effectively transfers out, and increasingly becomes in semiconductor industry one and urgently solves the problems, such as very much, relative to thicker base
Piece, the efficiency of relatively thin substrate transfer heat is higher, therefore effectively the thining method of substrate and device increasingly attract semiconductor
Industry and attention.
The thickness of semiconductor chip is usually with the size variation of chip area, such as a diameter of 150 millimeters of silicon chip, thickness
It is 659 microns；Diameter 200 and 300 millimeters of silicon chip, thickness are about 725 microns.The general method to wafer thinning is to silicon
The back side of piece is ground.It when carrying out being ground thinned to silicon chip back side, needs to protect the front containing device, commonly use
Method be to coat photoresist or adhesive tape in front side of silicon wafer.
Silicon chip is thinned in a manner that the back side is ground, can be produced in silicon chip surface and edge generation stress in silicon chip surface
Raw micro-crack.These stress can decline device performance, and silicon chip, which crushes, causes whole yield to reduce.Also, it is ground using the back side
Method silicon chip is thinned, be typically only capable to be thinned to 250~150 microns.
For silicon chip is made to continue to be thinned, after to back side grinding terminates, usually using the technique of wet-chemical etching.This technique
Process is commonly referred to as stress release burn into chemical reduction, chemical attack or chemical polishing, can remove silicon chip after mechanical reduction
The stress on surface and the cut at the back side promote flatness.And silicon chip can be further thinned in the method for chemical attack, and thickness can
To be reduced to less than 100 microns.
Although wafer thinning method it is well known that having some limitations property.In thinning process, silicon chip needs to pacify
On grain-clamping table, existing technology needs additional coating, bonding apparatus and material, increases processing time, and may introduce
Pollution.The binding agent of existing bonding silicon chip and grain-clamping table mainly uses the adhesive tape of photoresist, can be used for the back side machine of silicon chip
Tool grinding is thinned, but can not be used for subsequent wet-chemical etching.When being bonded using adhesive tape, obstacle can be generated to thinning process,
When such as removing adhesive tape, silicon chip can be made to generate bending stress.When using photoresist bonding, need, using solvent cleaning silicon chip, to increase
Add processing time and there is the possibility for introducing pollutant.
Silicon chip after being thinned is very easy to warpage and bending, and highly brittle, easy in subsequent transmission and processing procedure
It is damaged.The transmission device of existing full-automatic semiconductor chip processing equipment primarily directed to standard thickness silicon chip design (such as
12 inch silicon wafer thickness are 725 microns), when silicon chip is thinned in transmission, mistake easily occurs, causes silicon chip damaged.
In conclusion a kind of new technique and equipment is needed to carry out wafer thinning, the silicon chip that can be allowed after being thinned has enough
Rigidity reduces the risk of silicon chip breakage, while compatible with the conveyer system of existing full-automatic semiconductor chip processing equipment.
Invention content
The purpose of the present invention is to provide a kind of for the device of semiconductor chip to be thinned, and substrate can be made to have after being thinned
Enough rigidity avoids warpage and the breakage of substrate.
Another object of the present invention is to provide a kind of method for semiconductor chip to be thinned.
In order to achieve the above object, the technical solution adopted by the present invention is：
A kind of device for being used to that semiconductor chip to be thinned, described device include：
Chassis, the chassis are equipped with substrate slot, thinned substrate are treated for placing；
Upper cover, the upper cover are hollow ring-type, and the hollow area is less than or equal to the area of the substrate；On described
Lid is fixedly connected with chassis, and the substrate is clamped；The substrate treats hollow position of the thinned one side by the upper cover
It is exposed.
In said program, the chassis is equipped with external seal annular groove, and outer seal ring is equipped in the external seal annular groove；It is described
Outer seal ring is used to seal the gap between the chassis and the upper cover.
In said program, the upper lid is equipped with interior sealing annular groove, and inner seal ring is equipped in the interior sealing annular groove；It is described
Inner seal ring is used to seal the upper cover and the gap before the substrate.
A kind of method for semiconductor chip to be thinned, described method includes following steps：
Substrate is put into the protective device being made of pedestal and upper cover so that the front of the substrate and the substrate back
Circumferential edges protected, the unprotected place of substrate back is exposed；
Wet etching is carried out to the back side of the substrate so that the circumferential edges of the substrate keep the initial of the substrate
Thickness, the unprotected local thickness of the substrate back are thinned to less than half of the original depth of the substrate.
In said program, the chemical liquids that the wet etching uses is HF, HNO3Or H3PO4。
In said program, the chemical liquids that the wet etching uses is KOH, NaOH and H2O2Mixed liquor.
Compared with prior art, the beneficial effects of the invention are as follows：
Substrate is positioned in the protective device being made of pedestal and upper cover by the present invention so that substrate back middle section is sudden and violent
Expose, substrate front and marginal portion are protected.The part that substrate back is exposed using wet etching
Reduction processing is carried out, substrate edge keeps original thickness, plays a supporting role to entire substrate, reduces the broken of thinned substrate
Damage, makes entire substrate compatible with existing apparatus for production line, improves productivity, reduces cost.
Description of the drawings
Fig. 1 is a kind of structure diagram of device for being used to be thinned semiconductor chip provided in an embodiment of the present invention；
Fig. 2 is the C-C sectional views of Fig. 1；
Fig. 3 is the structure diagram after substrate provided in an embodiment of the present invention is thinned；
Fig. 4 is a kind of process flow chart of method for being used to be thinned semiconductor chip provided in an embodiment of the present invention.
Specific embodiment
In order to better understand the above technical scheme, in conjunction with appended figures and specific embodiments to upper
Technical solution is stated to be described in detail.
Embodiment one：
As depicted in figs. 1 and 2, the present embodiment provides a kind of for the device of semiconductor chip to be thinned, described device includes：
Chassis 1, the chassis are equipped with substrate slot, thinned substrate 3 are treated for placing；Upper cover 2, the upper cover 2 are hollow ring-type,
The hollow area is less than or equal to the area of the substrate 3；The upper cover 2 is fixedly connected with chassis 1, and the substrate 3 is pressed from both sides
It handles；The substrate 3 treats that thinned one side is exposed by the hollow position of the upper cover 2, the front of the substrate 3 and
Marginal portion is protected by chassis 1 and upper cover 2.
In the present embodiment, the chassis 1 is equipped with external seal annular groove, and outer seal ring 101 is equipped in the external seal annular groove；
The outer seal ring 101 is used to seal the gap between the chassis 1 and the upper cover 2.
In the present embodiment, the upper cover 2 is equipped with interior sealing annular groove, and inner seal ring 201 is equipped in the interior sealing annular groove；
The inner seal ring 201 is used to seal the upper cover 2 and the gap before the substrate 3.
The use process of the present embodiment is as follows：
The substrate 3 for treating thinned is put into pedestal 1, is then covered upper cover 2 on pedestal 1, and be bolted to connection；
The hollow space of upper cover 2 causes the middle section at 3 back side of substrate to be exposed, and the other parts of substrate 3 are protected.To base
The surface sprinkling wet etching etch chemistries liquid that piece 3 exposes, unprotected surface will gradually be thinned, in protected substrate 3
Then matrix is kept intact for edge and another side, ultimately forms intermediate be thinned and substrate that edge is kept intact, as shown in Figure 3.
Embodiment two：
As shown in figure 4, the present embodiment provides a kind of method for semiconductor chip to be thinned, the method includes walking as follows
Suddenly：
Step 110：Substrate is put into the protective device being made of pedestal and upper cover so that the substrate front and it is described
The circumferential edges of substrate back are protected, and the unprotected place of substrate back is exposed；
Step 120：Wet etching is carried out to the back side of the substrate so that the circumferential edges of the substrate keep the base
The original depth of piece, the unprotected local thickness of the substrate back be thinned to the half of the original depth of the substrate with
Under.
In the present embodiment, the chemical liquids that the wet etching uses is HF, HNO3Or H3PO4。
In the present embodiment, the chemical liquids that the wet etching uses is KOH, NaOH and H2O2Mixed liquor.
Advantages of the present invention is as follows：
1st, device provided by the invention is for being thinned substrate, substrate be thinned after edge thickness and substrate original depth phase
Together, intermediate weakened region is supported, substrate is made to have enough rigidity, warpage and the breakage of substrate is avoided, substrate is allowed to be processed in each road
It is effectively transmitted in journey；
2nd, since substrate edge thickness does not change, make entire substrate compatible with existing apparatus for production line, improve production
Rate reduces cost.
Particular embodiments described above has carried out the purpose of the present invention, technical solution and advantageous effect further in detail
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (6)
1. a kind of device for being used to that semiconductor chip to be thinned, which is characterized in that described device includes：
Chassis, the chassis are equipped with substrate slot, thinned substrate are treated for placing；
Upper cover, the upper cover are hollow ring-type, and the hollow area is less than or equal to the area of the substrate；The upper cover with
Chassis is fixedly connected, and the substrate is clamped；The substrate treats that thinned one side is exposed by the hollow position of the upper cover
Out.
2. device as described in claim 1, it is characterised in that：The chassis is equipped with external seal annular groove, the outer seal ring
Outer seal ring is equipped in slot；The outer seal ring is used to seal the gap between the chassis and the upper cover.
3. device as claimed in claim 2, it is characterised in that：The upper lid is equipped with interior sealing annular groove, the inner seal ring
Inner seal ring is equipped in slot；The inner seal ring is used to seal the upper cover and the gap before the substrate.
A kind of 4. method for semiconductor chip to be thinned, which is characterized in that described method includes following steps：
Substrate is put into the protective device being made of pedestal and upper cover so that the front of the substrate and the circle of the substrate back
Circumferential edges are protected, and the unprotected place of substrate back is exposed；
Wet etching is carried out to the back side of the substrate so that the circumferential edges of the substrate keep the initial thickness of the substrate
Degree, the unprotected local thickness of the substrate back are thinned to less than half of the original depth of the substrate.
5. method as claimed in claim 4, it is characterised in that：The chemical liquids that the wet etching uses is HF, HNO3Or
H3PO4。
6. method as claimed in claim 4, it is characterised in that：The chemical liquids that the wet etching uses for KOH, NaOH and
H2O2Mixed liquor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611224838.4A CN108242413A (en) | 2016-12-27 | 2016-12-27 | A kind of device and method for being used to that semiconductor chip to be thinned |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611224838.4A CN108242413A (en) | 2016-12-27 | 2016-12-27 | A kind of device and method for being used to that semiconductor chip to be thinned |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108242413A true CN108242413A (en) | 2018-07-03 |
Family
ID=62702754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611224838.4A Pending CN108242413A (en) | 2016-12-27 | 2016-12-27 | A kind of device and method for being used to that semiconductor chip to be thinned |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108242413A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110530700A (en) * | 2019-10-14 | 2019-12-03 | 长江存储科技有限责任公司 | Using the method and test sample of FIB preparation test sample |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080063853A1 (en) * | 2004-08-20 | 2008-03-13 | Dolechek Kert L | Semiconductor workpiece |
| DE102008004422A1 (en) * | 2008-01-14 | 2009-07-16 | Ap&S Production Gmbh | Holder for semiconductor wafer, comprises front side and rear side for one-sided sealing of semiconductor wafer, and rear plate is provided, which is arranged parallel to semiconductor wafer, facing rear side |
| CN104118844A (en) * | 2014-07-15 | 2014-10-29 | 电子科技大学 | Method for thinning silicon-base back surface |
| US20150024606A1 (en) * | 2013-07-17 | 2015-01-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for thinning wafer thereof |
-
2016
- 2016-12-27 CN CN201611224838.4A patent/CN108242413A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080063853A1 (en) * | 2004-08-20 | 2008-03-13 | Dolechek Kert L | Semiconductor workpiece |
| DE102008004422A1 (en) * | 2008-01-14 | 2009-07-16 | Ap&S Production Gmbh | Holder for semiconductor wafer, comprises front side and rear side for one-sided sealing of semiconductor wafer, and rear plate is provided, which is arranged parallel to semiconductor wafer, facing rear side |
| US20150024606A1 (en) * | 2013-07-17 | 2015-01-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for thinning wafer thereof |
| CN104118844A (en) * | 2014-07-15 | 2014-10-29 | 电子科技大学 | Method for thinning silicon-base back surface |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110530700A (en) * | 2019-10-14 | 2019-12-03 | 长江存储科技有限责任公司 | Using the method and test sample of FIB preparation test sample |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180703 |
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| RJ01 | Rejection of invention patent application after publication |