CN108242394A - A kind of silicon carbide mos gated power device and preparation method thereof - Google Patents
A kind of silicon carbide mos gated power device and preparation method thereof Download PDFInfo
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- CN108242394A CN108242394A CN201611224421.8A CN201611224421A CN108242394A CN 108242394 A CN108242394 A CN 108242394A CN 201611224421 A CN201611224421 A CN 201611224421A CN 108242394 A CN108242394 A CN 108242394A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 104
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 150000002500 ions Chemical class 0.000 claims abstract description 83
- 238000002347 injection Methods 0.000 claims abstract description 30
- 239000007924 injection Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 64
- 238000005468 ion implantation Methods 0.000 claims description 35
- -1 Nitrogen ion Chemical class 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 6
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229940090044 injection Drugs 0.000 description 22
- 239000000243 solution Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 6
- 229960002163 hydrogen peroxide Drugs 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229940032330 sulfuric acid Drugs 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of silicon carbide mos gated power devices and preparation method thereof, the front that the preparation method is included in silicon carbide substrates forms epitaxial film, and using the upper surface injection ion of epitaxial film described in the ion implanting of falling doping type normal direction, form doped well region；Source contact area and base contact regions are respectively formed to the injection of falling doped well region ion；In the upper surface of epitaxial film, deposit metal is respectively formed gate electrode and source electrode, and at the back side of silicon carbide substrates, deposit metal forms drain electrode.Compared with prior art, a kind of silicon carbide mos gated power device provided by the invention and preparation method thereof, can to avoid silicon carbide mos gated power device bear reversely pressure resistance when because the break-through of well region bottom due to lead to component failure or damage.
Description
Technical field
The present invention relates to technical field of semiconductor device, and in particular to a kind of silicon carbide mos gated power device and its system
Preparation Method.
Background technology
Carbofrax material has broad-band gap, high breakdown field strength, high heat conductance, high saturated electrons migration rate and fabulous
The characteristics such as physical and chemical stability, suitable for high temperature, high frequency, the work of high-power and extreme environment.Silicon carbide is uniquely may be used
To generate SiO by thermal oxide2The wide bandgap semiconductor materials of dielectric layer so that silicon carbide is especially suitable for preparing various MOS knots
The semiconductor devices of structure, silicon carbide mos power device have as a kind of unipolar device than silicon IGBT device more high voltage energy
Power and more high power capacity, and frequency higher, power consumption smaller.However well region uses in traditional silicon carbide mos power device
Box injection, if implantation concentration is too small, device bears the easy break-through in well region bottom during reversed pressure resistance, leads to device voltage endurance capability
Decline or premature deterioration；If implantation concentration is too big, device grids threshold voltage can be caused excessively high, device grid-control reduced capability.
Invention content
In order to meet the defects of overcoming the prior art, the present invention provides a kind of silicon carbide mos gated power device and its
Preparation method.
In a first aspect, a kind of technical solution of the preparation method of silicon carbide mos gated power device is in the present invention：
The preparation method includes：
Epitaxial film is formed, and using epitaxial film described in the ion implanting of falling doping type normal direction in the front of silicon carbide substrates
Upper surface injection ion, formed fall doped well region；
Source contact area and base contact regions are respectively formed to the injection of the falling doped well region ion；
In the upper surface of the epitaxial film, deposit metal is respectively formed gate electrode and source electrode, in the silicon carbide substrates
The back side deposit metal formed drain electrode.
Further, an optimal technical scheme provided by the invention is：It is described to use the ion implanting of falling doping type normal direction
Include before the upper surface injection ion of epitaxial film：
The silicon carbide substrates and epitaxial film are cleaned using RCA standard cleanings method；
The upper surface of epitaxial film after the cleaning forms ion implantation mask layer；
The upper surface of the ion implantation mask layer formed ion implanting window, and by the ion implanting window to
Epitaxial film injects ion.
Further, an optimal technical scheme provided by the invention is：It is described to use the ion implanting of falling doping type normal direction
The upper surface injection ion of epitaxial film includes：It is injected using single ion injection method or multistep ion implantation to epitaxial film
Ion.
Further, an optimal technical scheme provided by the invention is：
The temperature of the ion implantation of falling doping type is 0~1000 DEG C, and ion implantation energy is 1kev~100MeV, from
Sub- implantation dosage is 1 × 1010-1×1016(atom/cm-2)。
Second aspect, the present invention in a kind of technical solution of silicon carbide mos gated power device be：
The silicon carbide mos gated power device includes：
Silicon carbide substrates；
Epitaxial film is arranged on the front of the silicon carbide substrates；
Doped well region is arranged in the epitaxial film；The doped well region is to pass through the ion of falling doping type to note
Enter the well region that the upper surface injection ion of epitaxial film described in normal direction is formed；
Source contact area and base contact regions；The source contact area and base contact regions are arranged at the dopant well
In area；
Gate electrode, source electrode and drain electrode；The gate electrode and source electrode are arranged at the upper surface of the epitaxial film；
The drain electrode is arranged on the back side of the silicon carbide substrates.
Further, an optimal technical scheme provided by the invention is：
The silicon carbide substrates are N-shaped or p-type silicon carbide, and the silicon carbide is 4H-SiC or 6H-SiC；
The thickness of the epitaxial film is 0.1 μm -500 μm, and doping concentration is 1 × 1013-1×1021cm-3；
It is described fall doped well region Doped ions for Nitrogen ion, phosphonium ion, aluminium ion or boron ion, the Doped ions
A concentration of 1 × 1010-1×1016cm-2。
Further, an optimal technical scheme provided by the invention is：The silicon carbide mos gated power device also wraps
Ion implantation mask layer is included, is arranged on the upper surface of the epitaxial film；
The ion implantation mask layer includes ion implanting window.
Further, an optimal technical scheme provided by the invention is：
The ion implantation mask layer is the single film layer being made of silicon, silicon oxide compound, silicon-nitrogen compound or metal；
Alternatively,
The ion implantation mask layer is by least two material structures in silicon, silicon oxide compound, silicon-nitrogen compound and metal
Into multi-layer thin film layer；The thickness of each film layer is 0.001~200 μm in the multi-layer thin film layer.
Further, an optimal technical scheme provided by the invention is：
The length and width or radius of the ion implanting window are 0.01 μm~50cm；
The ion implanting window is interdigital structure or parallel strip or circular ring shape or rectangular, the parallel strip packet
Include multiple parallel rectangles；Alternatively, the ion implanting window is includes the interdigital structure, parallel strip, circular ring shape
With it is rectangular at least two shapes composite figure.
Further, an optimal technical scheme provided by the invention is：The silicon carbide mos gated power device is carbon
SiClx MOSFET, silicon carbide IGBT or silicon carbide mos GCT.
Compared with the immediate prior art, the beneficial effects of the invention are as follows：
1st, the preparation method of a kind of silicon carbide mos gated power device provided by the invention is noted using the ion of falling doping type
Doped well region can be formed down by entering normal direction epitaxial film injection ion, and the ion doping concentration of bottom is more than top in doped well region
The ion doping concentration in portion, can to avoid silicon carbide mos gated power device bear reversely pressure resistance when because of the break-through of well region bottom
And lead to component failure or damage.
2nd, a kind of silicon carbide mos gated power device provided by the invention, including falling doped well region, and doped well region
The ion doping concentration of middle bottom is more than the ion doping concentration at top, therefore can be to avoid silicon carbide mos gated power device
Lead to component failure or damage when bearing reversely pressure resistance because the break-through of well region bottom.
Description of the drawings
Fig. 1：The preparation method implementing procedure figure of a kind of silicon carbide mos gated power device in the embodiment of the present invention；
Fig. 2：Epitaxial film schematic diagram in the embodiment of the present invention；
Fig. 3：Intermediate ion injection masking layer schematic diagram of the embodiment of the present invention；
Fig. 4：Intermediate ion of the embodiment of the present invention injects window schematic diagram；
Fig. 5：The schematic diagram of falling doped well region in the embodiment of the present invention；
Fig. 6：Silicon carbide mos gated power device cross-section schematic diagram in the embodiment of the present invention；
Fig. 7：In the embodiment of the present invention fall doped well region Doped ions concentration distribution schematic diagram；
Wherein, 11：Silicon carbide substrates；12：Epitaxial film；13：Ion implantation mask layer；14：Include ion implanting window
Ion implantation mask layer；15：Doped well region；16：Gate electrode；17：Source electrode；18：Drain electrode.
Specific embodiment
Purpose, technical scheme and advantage to make the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical solution in the embodiment of the present invention is clearly and completely illustrated, it is clear that described embodiment is
Part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
All other embodiments obtained without making creative work shall fall within the protection scope of the present invention.
Separately below with reference to attached drawing, to a kind of preparation of silicon carbide mos gated power device provided in an embodiment of the present invention
Method illustrates.
Fig. 1 is a kind of preparation method implementing procedure figure of silicon carbide mos gated power device in the embodiment of the present invention, is such as schemed
Shown, the present embodiment can prepare silicon carbide mos gated power device as steps described below, specially：
Step S101：Epitaxial film is formed, and outside using the ion implantation of falling doping type in the front of silicon carbide substrates
Prolong the upper surface injection ion of film, form doped well region.
Step S102：Source contact area and base contact regions are respectively formed to the injection of falling doped well region ion.
Step S103：In the upper surface of epitaxial film, deposit metal is respectively formed gate electrode and source electrode, is served as a contrast in silicon carbide
The back side deposit metal at bottom forms drain electrode.
Doped well region can be formed down to epitaxial film injection ion using the ion implantation of falling doping type in the present embodiment,
The ion doping concentration of bottom, can be to avoid silicon carbide mos grid-control work(more than the ion doping concentration at top in doped well region
Rate device bear reversely pressure resistance when because the break-through of well region bottom due to lead to component failure or damage.
Further, step S101 can also include the following steps in the present embodiment, specially：
1st, after forming epitaxial film in the front of silicon carbide substrates, using RCA standard cleanings method to silicon carbide substrates and
Epitaxial film is cleaned.RCA standard cleaning methods are briefly described below, specially：
(1) cleaning solution is configured.Wherein, the mixed solution of hydrofluoric acid HF and distilled water H2O, hydrogen fluorine are used in the present embodiment
Sour HF and distilled water H2The ratio of O is 1:10.
(2) with step (1) be configured cleaning solution cleaning sample stent and dry up, silicon carbide sample is fixed on stent
On.
(3) 3# solution is configured, the stent for being fixed with silicon carbide sample is placed in 250 DEG C of 3# solution and cleans 15min, clearly
End is washed later with hot water injection's stent.Wherein, 3# solution is the mixed solution of sulfuric acid and hydrogen peroxide, sulfuric acid and oxydol H2O2
Ratio be 3:1.
(4) 1# solution is configured, after 1# solution is heated to 75~85 DEG C and continues 10~20min, silicon carbide will be fixed with
The stent of sample is placed on 10~20min of cleaning in 1# solution, and cleaning uses hot water injection's stent after terminating.Wherein, 1# solution is
Ammonium hydroxide, oxydol H2O2With distilled water H2The mixed solution of O, ammonium hydroxide, oxydol H2O2With distilled water H2The ratio of O is 1:1:5~
1:1:7。
(5) 2# solution is configured, the stent for being fixed with silicon carbide sample is placed in 2# solution and cleans 15min, cleaning terminates
Hot water injection's stent is used later.Wherein, 2# solution is hydrochloric acid, oxydol H2O2With distilled water H2The mixed solution of O, hydrochloric acid, dioxygen
Water H2O2With distilled water H2The ratio of O is 1:1:5.
(6) 5~10s of stent for being fixed with silicon carbide sample is cleaned with a concentration of 10% hydrofluoric acid HF, to remove carbonization
The oxide layer on silicon sample surface.
(7) the stent 20min for being fixed with silicon carbide sample is cleaned with deionized water.
2nd, the upper surface of epitaxial film after cleaning forms ion implantation mask layer.
3rd, ion implanting window is formed in the upper surface of ion implantation mask layer.
4th, ion is injected to the upper surface of epitaxial film by ion implanting window using the ion implantation of falling doping type.This
Single ion injection method may be used in embodiment, multistep ion implantation can also be used to inject ion to epitaxial film.Its
In：The temperature for the ion implantation of falling doping type be 0~1000 DEG C, ion implantation energy be 1kev~100MeV, ion implanting agent
Measure is 1 × 1010-1×1016(atom/cm-2)。
Fig. 7 be the embodiment of the present invention in fall doped well region Doped ions concentration distribution schematic diagram, wherein, each Doped ions
The injection condition of concentration distribution is as shown in table 1.
Table 1
| Implantation Energy | 30kev | 45kev | 120kev | 250kev | 300kev | 350kev | 450kev | Total |
| Implantation dosage | 1.65e+12 | 2.3e+12 | 1.26e+13 | 8.3e+13 | 9.3e+13 | 1.0e+14 | 1.15e+13 | 3.0e+14 |
The present invention also provides a kind of silicon carbide mos gated power device, and provide specific embodiment.
Silicon carbide mos gated power device includes silicon carbide substrates, epitaxial film, doped well region, source in the present embodiment
Pole contact zone, base contact regions, gate electrode, source electrode and drain electrode.
Wherein, epitaxial film is arranged on the front of silicon carbide substrates, and source contact area and base contact regions are arranged at institute
It states down in doped well region, gate electrode and source electrode are arranged at the upper surface of epitaxial film, and drain electrode is arranged on silicon carbide substrates
The back side.
Doped well region is arranged in epitaxial film.Doped well region is fallen in the present embodiment to pass through the ion implanting of falling doping type
The well region that the upper surface injection ion of normal direction epitaxial film is formed.
The ion doping concentration of bottom in doped well region of being fallen in the present embodiment is more than the ion doping concentration at top, therefore can
To avoid silicon carbide mos gated power device bear reversely pressure resistance when because the break-through of well region bottom due to lead to component failure or damage
It is bad.
Further, it may be p-type silicon carbide, wherein carbon that silicon carbide substrates, which can be N-shaped silicon carbide, in the present embodiment
SiClx may be used as 4H-SiC or 6H-SiC.The thickness of epitaxial film can be 0.1 μm -500 μm, doping concentration for 1 ×
1013-1×1021cm-3.The Doped ions of doped well region be Nitrogen ion, phosphonium ion, aluminium ion or boron ion, Doped ions
A concentration of 1 × 1010-1×1016cm-2。
Further, silicon carbide mos gated power device can also include ion implantation mask layer in the present embodiment, should be from
Sub- injection masking layer is arranged on the upper surface of epitaxial film, and including ion implanting window.
Wherein, ion implantation mask layer can be the single thin layer being made of silicon, silicon oxide compound, silicon-nitrogen compound or metal
Film layer, or the multi-layer thin film layer being made of at least two materials in silicon, silicon oxide compound, silicon-nitrogen compound and metal,
The thickness of each film layer is 0.001~200 μm in multi-layer thin film layer.
The length and width or radius of ion implanting window are 0.01 μm~50cm.
Ion implanting window can be interdigital structure or parallel strip or circular ring shape or rectangular, or comprising interdigital
Structure, parallel strip, circular ring shape and it is rectangular at least two shapes composite figure.Wherein, parallel strip includes multiple
Parallel rectangle.
Further, silicon carbide mos gated power device can be silicon carbide MOSFET, silicon carbide IGBT in the present embodiment
Or silicon carbide mos GCT.
The present invention also provides the preferred embodiment of a silicon carbide mos gated power device, below in conjunction with the accompanying drawings to this
The preparation method of silicon carbide mos gated power device is described in detail.
1st, epitaxial film is prepared
Fig. 2 is epitaxial film schematic diagram in the embodiment of the present invention, as shown in the figure, in silicon carbide substrates 11 in the present embodiment
Front forms epitaxial film 12, and cleaning sic substrate 11 and epitaxial film 12.Wherein：Silicon carbide substrates 11 are N-shaped 4H-
SiC, thickness are 380 μm, and Doped ions are Nitrogen ion N, and doping concentration is 5 × 1018cm-3.Epitaxial film 12 is N-shaped 4H-SiC,
Thickness is 12 μm, and Doped ions are Nitrogen ion N, and doping concentration is 8 × 1018cm-3。
2nd, ion implantation mask layer is prepared
Fig. 3 is intermediate ion injection masking layer schematic diagram of the embodiment of the present invention, as shown in the figure, using PECVD in the present embodiment
Deposition method forms ion implantation mask layer 13 in the upper surface of epitaxial film 12.Wherein：Ion implantation mask layer 13 is by two
The single film layer that silica is formed, thickness are 2 μm.
3rd, ion implanting window is prepared
Fig. 4 injects window schematic diagram for intermediate ion of the embodiment of the present invention, as shown in the figure, in the present embodiment, to ion implanting
Mask layer 13 carries out lithography and etching, forms ion implanting window 14.Wherein：Ion implanting window 14 is the side of 10 μm of 10 μ m
Shape ion implanting window.
4th, prepare doped well region
Fig. 5 be the embodiment of the present invention in the schematic diagram of falling doped well region, as shown in the figure, in the present embodiment using doping type from
Sub- injection method injects aluminium ion Al by ion implanting window 14 to epitaxial film 12, forms doped well region 15.
5th, the electrode of silicon carbide mos gated power device is prepared
Fig. 6 is silicon carbide mos gated power device cross-section schematic diagram in the embodiment of the present invention, as shown in the figure, to mixing
Miscellaneous well region 15 injects ion and is respectively formed source contact area and base contact regions, epitaxial film upper surface deposited metal simultaneously
Lithography and etching is carried out to the metal layer and forms gate electrode 16 and source electrode 17, in the back side deposited metal of silicon carbide substrates,
And lithography and etching is carried out to the metal layer and forms drain electrode 18.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of preparation method of silicon carbide mos gated power device, which is characterized in that the preparation method includes：
Epitaxial film is formed, and using the upper of epitaxial film described in the ion implanting of falling doping type normal direction in the front of silicon carbide substrates
Ion is injected on surface, forms doped well region；
Source contact area and base contact regions are respectively formed to the injection of the falling doped well region ion；
In the upper surface of the epitaxial film, deposit metal is respectively formed gate electrode and source electrode, in the back of the body of the silicon carbide substrates
Face deposit metal forms drain electrode.
2. a kind of preparation method of silicon carbide mos gated power device as described in claim 1, which is characterized in that described to adopt
Included before to the upper surface injection ion of epitaxial film with the ion implantation of falling doping type：
The silicon carbide substrates and epitaxial film are cleaned using RCA standard cleanings method；
The upper surface of epitaxial film after the cleaning forms ion implantation mask layer；
Ion implanting window is formed in the upper surface of the ion implantation mask layer, and by the ion implanting window to extension
Film injects ion.
3. a kind of preparation method of silicon carbide mos gated power device as described in claim 1, which is characterized in that described to adopt
Included with the ion implantation of falling doping type to the upper surface injection ion of epitaxial film：Using single ion injection method or multistep from
Sub- injection method injects ion to epitaxial film.
4. a kind of preparation method of silicon carbide mos gated power device as described in claim 1, which is characterized in that
The temperature of the ion implantation of falling doping type is 0~1000 DEG C, and ion implantation energy is 1kev~100MeV, and ion is noted
It is 1 × 10 to enter dosage10-1×1016(atom/cm-2)。
5. a kind of silicon carbide mos gated power device, which is characterized in that the silicon carbide mos gated power device includes：
Silicon carbide substrates；
Epitaxial film is arranged on the front of the silicon carbide substrates；
Doped well region is arranged in the epitaxial film；The doped well region is passes through the ion implantation of falling doping type
The well region formed to the upper surface injection ion of the epitaxial film；
Source contact area and base contact regions；The source contact area and base contact regions are arranged at the doped well region
It is interior；
Gate electrode, source electrode and drain electrode；The gate electrode and source electrode are arranged at the upper surface of the epitaxial film；It is described
Drain electrode is arranged on the back side of the silicon carbide substrates.
6. a kind of silicon carbide mos gated power device as claimed in claim 5, which is characterized in that
The silicon carbide substrates are N-shaped or p-type silicon carbide, and the silicon carbide is 4H-SiC or 6H-SiC；
The thickness of the epitaxial film is 0.1 μm -500 μm, and doping concentration is 1 × 1013-1×1021cm-3；
It is described fall doped well region Doped ions for Nitrogen ion, phosphonium ion, aluminium ion or boron ion, the concentration of the Doped ions
It is 1 × 1010-1×1016cm-2。
A kind of 7. silicon carbide mos gated power device as claimed in claim 5, which is characterized in that the silicon carbide mos grid-control
Power device further includes ion implantation mask layer, is arranged on the upper surface of the epitaxial film；
The ion implantation mask layer includes ion implanting window.
8. a kind of silicon carbide mos gated power device as claimed in claim 7, which is characterized in that
The ion implantation mask layer is the single film layer being made of silicon, silicon oxide compound, silicon-nitrogen compound or metal；Or
Person,
The ion implantation mask layer is made of at least two materials in silicon, silicon oxide compound, silicon-nitrogen compound and metal
Multi-layer thin film layer；The thickness of each film layer is 0.001~200 μm in the multi-layer thin film layer.
9. a kind of silicon carbide mos gated power device as claimed in claim 7, which is characterized in that
The length and width or radius of the ion implanting window are 0.01 μm~50cm；
The ion implanting window is interdigital structure or parallel strip or circular ring shape or rectangular, and the parallel strip includes more
A parallel rectangle；Alternatively, the ion implanting window is includes the interdigital structure, parallel strip, circular ring shape and side
The composite figure of at least two shapes in shape.
A kind of 10. silicon carbide mos gated power device as claimed in claim 5, which is characterized in that the silicon carbide mos grid
Control power device is silicon carbide MOSFET, silicon carbide IGBT or silicon carbide mos GCT.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473485A (en) * | 2018-12-29 | 2019-03-15 | 重庆伟特森电子科技有限公司 | Silicon carbide diode and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099905A1 (en) * | 2001-04-11 | 2004-05-27 | Baliga Bantval Jayant | Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through and schottky rectifying flyback diodes |
| CN101101877A (en) * | 2007-07-20 | 2008-01-09 | 哈尔滨工程大学 | Method for making groove power semiconductor device |
| US20110169046A1 (en) * | 2006-12-11 | 2011-07-14 | Panasonic Corporation | Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof |
| CN105359276A (en) * | 2013-03-21 | 2016-02-24 | 美高森美公司 | SIC power vertical DMOS with increased safe operating area |
-
2016
- 2016-12-27 CN CN201611224421.8A patent/CN108242394A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099905A1 (en) * | 2001-04-11 | 2004-05-27 | Baliga Bantval Jayant | Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through and schottky rectifying flyback diodes |
| US20110169046A1 (en) * | 2006-12-11 | 2011-07-14 | Panasonic Corporation | Lateral insulated gate bipolar transistor having a retrograde doping profile in base region and method of manufacture thereof |
| CN101101877A (en) * | 2007-07-20 | 2008-01-09 | 哈尔滨工程大学 | Method for making groove power semiconductor device |
| CN105359276A (en) * | 2013-03-21 | 2016-02-24 | 美高森美公司 | SIC power vertical DMOS with increased safe operating area |
Non-Patent Citations (1)
| Title |
|---|
| K.FUJIHIRA ET AL: "Realization of Low On-resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-body", 《MATERIALS SCIENCE FORUM》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473485A (en) * | 2018-12-29 | 2019-03-15 | 重庆伟特森电子科技有限公司 | Silicon carbide diode and preparation method thereof |
| CN109473485B (en) * | 2018-12-29 | 2023-07-04 | 重庆伟特森电子科技有限公司 | Silicon carbide diode and preparation method thereof |
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