CN108232005A - A kind of method for laterally trimming miniature magnetic tunnel junction pattern - Google Patents
A kind of method for laterally trimming miniature magnetic tunnel junction pattern Download PDFInfo
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- CN108232005A CN108232005A CN201611129951.4A CN201611129951A CN108232005A CN 108232005 A CN108232005 A CN 108232005A CN 201611129951 A CN201611129951 A CN 201611129951A CN 108232005 A CN108232005 A CN 108232005A
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- tunnel junction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Abstract
The invention discloses a kind of method for laterally trimming miniature magnetic tunnel junction pattern, including：First step：Magnetic tunnel junction multilayer film, hard mask film layer and sacrificial mask film layer are sequentially formed in hearth electrode substrate；Second step：Formed magnetic tunnel junction pattern, and using laterally trimming technique magnetic tunnel junction pattern trim it is miniature；Third step：Sacrificial mask layer and hard mask film layer are performed etching, and lateral trimming technique is used to be trimmed to continuing magnetic tunnel junction pattern with the magnetic tunnel junction mask of acquisition more fine size；Four steps：Magnetic tunnel junction multilayer film is performed etching, to complete the miniaturization of magnetic tunnel junction making.
Description
Technical field
The present invention relates to magnetic RAM (MRAM, Magnetic Random Access Memory) manufacturing technologies
Field more particularly to the MRAM circuits for preparing small size, in particular it relates to laterally trim (TRIM) work using a kind of
Skill to carry out magnetic tunnel junction (MTJ, Magnetic Tunnel Junction) pattern miniature method.
Background technology
In recent years, using the MRAM of the magneto-resistance effect of MTJ by it is believed that be following solid state non-volatile memory body,
It has the characteristics that high-speed read-write, large capacity and low energy consumption.Ferromagnetism MTJ is usually sandwich structure, wherein the note that is magnetic
Recall layer, it can change the direction of magnetization to record different data；Positioned at the tunnel barrier layer of intermediate insulation；Magnetic reference
Layer, positioned at the opposite side of tunnel barrier layer, its direction of magnetization is constant.
In order to record information in this magnetoresistive element, it is proposed that using based on spin momentum transfer or spin transfer
The write method of square (STT, Spin Transfer Torque) switch technology, such MRAM are known as STT-MRAM.According to magnetic pole
Change the difference in direction, STT-MRAM is divided into as STT-MRAM in face and vertical STT-MRAM (i.e. pSTT-MRAM), and the latter has more preferably
Performance.Method according to this, you can strong come the magnetization of inverting magnetization memory layer by providing spin polarized current to magnetoresistive element
Spend direction.In addition, the reduction of the volume with Magnetic memory layer, write or spin polarized current that conversion operation need to be injected also is got over
It is small.Therefore, this write method can be achieved at the same time device miniaturization and reduce electric current.
Meanwhile in view of switching electric current required when reducing MTJ element size can also reduce, so the pSTT- in terms of scale
MRAM can be very good mutually to agree with state-of-the-art technology node.Therefore, it is desirable to it is that pSTT-MRAM elements are made into minimum ruler
It is very little, and with extraordinary uniformity and the influence to MTJ magnetism is minimized, used preparation method can also be real
Show high good and the bad rate, pinpoint accuracy, high reliability, low energy consumption and remain adapted to the temperature coefficient that data well preserve.Meanwhile
Write operation is changed based on resistance state in nonvolatile memory, so as to need control thus caused to mtj memory device lifetime
Destruction and shortening.However, the fluctuation of MTJ resistance may be increased by preparing a small-sized MTJ element so that pSTT-MRAM's
Larger fluctuation can also be had therewith by writing voltage or electric current, can damage the performance of MRAM in this way.
In current MTJ etching technics, reactive ion etching (RIE, Reactive Ion Etching) and ion beam
Etch (IBE, Ion Beam Etching) be most common two kinds of technologies, due to both techniques when MTJ is etched all
With higher anisotropic etching performance, excessive transverse direction will not be carried out to side wall and is carved during graphical transfer
Erosion/trimming.If technique or the photoetching technique of 248nm KrF are done using 193nm ArF, due to the limit of the resolution ratio of litho machine
System, then, the requirement for the line width for making small size MTJ will be not achieved；Want magnetic tunnel junction (MTJ) array of preparation small size
Finer photoetching technique just is needed, such as：The wet techniques of 193i (immersion), EUV or EBL etc., this undoubtedly increases system
Cause this.Meanwhile relative to traditional semiconductor, the MTJ sizes and pattern density in MRAM circuits are relatively small, so as to increase
The risk that MTJ patterns disappear in graphical transfer process.
Invention content
In view of the drawbacks described above of the prior art, the technical problems to be solved by the invention are to provide a kind of laterally trimming contracting
The method of micromagnetism tunnel knot pattern can reduce the risk that magnetic tunnel junction pattern disappears during graphical transfer.
To achieve the above object, the present invention provides a kind of method for laterally trimming miniature magnetic tunnel junction pattern, including：
First step：Magnetic tunnel junction multilayer film, hard mask film layer and sacrificial mask film layer are sequentially formed in hearth electrode substrate；Second
Step：Formed magnetic tunnel junction pattern, and using laterally trimming technique magnetic tunnel junction pattern trim it is miniature；Third walks
Suddenly：Sacrificial mask layer and hard mask film layer are performed etching, and using laterally trimming technique continue to magnetic tunnel junction pattern into
Row trims the magnetic tunnel junction mask to obtain more fine size；Four steps：Magnetic tunnel junction multilayer film is performed etching, with
The miniaturization for completing magnetic tunnel junction makes.
Preferably, in the second step, it is realized using carbon containing figure film layer, antireflecting inorganic layer and photoresist three-decker
The definition of magnetic tunnel junction pattern, and pass through etching and transfer is patterned to magnetic tunnel junction pattern, finally repaiied using lateral
It is miniature that shearing process carries out carbon containing figure film layer laterally trimming.
Preferably, in the second step, the definition to magnetic tunnel junction pattern is realized, and using laterally using photoresist
Trimming technique, laterally trimming is miniature to photoresist progress.
Preferably, the thickness of the magnetic tunnel junction multilayer film is 15nm-40nm.
Preferably, the hard mask film layer is one kind in Ta, TaN, W or WN, and the thickness of the hard mask film layer is 40-
100nm。
Preferably, the sacrificial mask film layer is SiO2, one kind in SiON or SiN, the sacrificial mask film layer
Thickness is 0-40nm.
Preferably, one layer of ruthenium film layer is formed on magnetic tunnel junction multilayer film as stop layer, wherein ruthenium film layer
Thickness is 2nm-30nm.
Preferably, in the second step, laterally trimming technique is carried out using ion etch process cavity, laterally trimming technique
Pressure for 1mT-100mT, laterally trim majoring in for technique and cut gas and be selected from (Cl2、HBr、CF4)/(N2、H2Or O2) etc., bias
It is set as a zero or smaller numerical value.
Preferably, in third step, using CF4And/or CHF3Sacrificial mask film layer is carried out as main etching gas
Etching, using Cl2, SF6,CF4,SF6/CHF3,CF4/CHF3One of be used as main etching gas, Ar, Ne, He, N can be added2As
Auxiliary etch gas performs etching hard mask film layer.
Preferably, in third step, laterally trimming technique is carried out using ion etch process cavity, laterally trimming technique
Pressure for 1mT-100mT, laterally trim majoring in for technique and cut gas and be selected from SF6, CF4Or CHF3Deng, bias be set as zero or
One smaller numerical value.
The technique effect of the design of the present invention, concrete structure and generation is described further below with reference to attached drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Description of the drawings
Fig. 1 is that the pattern that a kind of photoetching process for laterally trimming miniature magnetic tunnel junction pattern defines and process are lateral twice
The size of magnetic tunnel junction pattern (the magnetic tunnel junction pattern of more fine size) formed after trimming technique compares and opposite position
Put schematic diagram.
Fig. 2 is the flow chart of the method according to the preferred embodiment of the invention for laterally trimming miniature magnetic tunnel junction pattern.
Fig. 3 is schematically shown in presently preferred embodiments of the present invention, and magnetic tunnel is sequentially formed on hearth electrode substrate
Multilayer film is tied, the structure diagram after hard mask film layer and sacrificial mask film layer.
Fig. 4 A schematically show the present invention a preferred embodiment on sacrificial mask, sequentially form carbon containing
After figure film layer, antireflecting inorganic layer and photoresist layer, and define to form showing after magnetic tunnel junction pattern using photoetching process
It is intended to.
Fig. 4 B are schematically shown in a preferred embodiment of the invention to antireflecting inorganic layer and carbon containing figure film layer
Schematic diagram after performing etching.
Fig. 4 C, which schematically show to use in the preferred embodiment of the present invention, laterally trims technique to carbon containing figure film
Layer carries out the schematic diagram after parts transversely trimming.
Fig. 5 A are schematically shown in another preferred embodiment of the invention on sacrificial mask, form photoetching
After glue-line, and the schematic diagram to be formed after magnetic tunnel junction pattern is defined using photoetching process.
Fig. 5 B, which schematically show to use in another preferred embodiment of the present invention, laterally trims technique to photoetching
Glue-line carries out the schematic diagram after parts transversely trimming.
Fig. 6 A are schematically shown sacrificial mask and hard mask are performed etching in presently preferred embodiments of the present invention after
Schematic diagram.
Fig. 6 B are schematically shown in presently preferred embodiments of the present invention and are continued using laterally trimming technique to magnetic tunnel
Road knot pattern is trimmed the schematic diagram after the magnetic tunnel junction mask to obtain more fine size.
Fig. 7 is schematically shown in presently preferred embodiments of the present invention, after being performed etching to magnetic tunnel junction multilayer film
Schematic diagram.
Reference sign：101- substrates, 102- magnetic tunnel junction multiple film layers, 103- hard mask film layers, 104- sacrifices are covered
Mould film layer, the carbon containing figure film layers of 105-, 106- antireflecting inorganic layers, 107- photoresist layers (first preferable case), 108- photoetching
Glue-line (another preferable case).
It should be noted that attached drawing is not intended to limit the present invention for illustrating the present invention.Note that represent that the attached drawing of structure can
It can be not necessarily drawn to scale.Also, in attached drawing, same or similar element indicates same or similar label.
Specific embodiment
To solve the above-mentioned problems, this kind of method for laterally trimming miniature magnetic tunnel junction pattern provided by the invention,
Define magnetic tunnel junction pattern on a photoresist by photoetching process, then by the lateral trimming technique of two steps, i.e.,：To carbon containing figure
The trimming of film layer or photoresist and the trimming to hard mask film layer make the pattern 1 obtained originally become miniature to more fine size
Magnetic tunnel junction pattern 2, finally by etching technics complete magnetic tunnel junction array patterning, as shown in Figure 1.
The preferred embodiment of the method for the present invention is detailed below.
Fig. 2 is the flow chart of the method according to the preferred embodiment of the invention for laterally trimming miniature magnetic tunnel junction pattern.
As shown in Fig. 2, the method according to the preferred embodiment of the invention for laterally trimming miniature magnetic tunnel junction pattern includes：
First step S1：In hearth electrode substrate 101, magnetic tunnel junction multilayer film 102, hard mask film layer are sequentially formed
103 and sacrificial mask film layer 104, as shown in Figure 3；
Wherein it is preferred to the thickness of the magnetic tunnel junction multilayer film 102 is 15nm-40nm.The hard mask film layer
103 be one kind in Ta, TaN, W or WN etc..Preferably, the thickness of the hard mask film layer 103 is 40-100nm.Preferably,
The sacrificial mask film layer 104 is SiO2, one kind in SiON or SiN etc..Preferably, the sacrificial mask film layer 104
Thickness is 0-40nm.
It etches/repaiies preferably, depositing one layer of ruthenium (Ru) film layer usually above magnetic tunnel junction multilayer film 102 and being used as
The stop layer of hard mask 103 is cut, wherein, the thickness of ruthenium film layer is 2nm-30nm.Furthermore, it is possible to using ruthenium target, splashed by physics
It penetrates or ruthenium film layer is formed the methods of ion beam depositing.
Second step S2：Magnetic tunnel junction pattern is formed, and magnetic tunnel junction pattern is carried out using laterally trimming technique
It trims miniature；
Generally, lithographic etch process may be used or photoetching process two schemes form magnetic tunnel junction pattern, specifically such as
It is lower described：
The first scheme：It is realized using carbon containing figure film layer 105, antireflecting inorganic layer 106 and 107 three-decker of photoresist
The definition of magnetic tunnel junction pattern, and pass through etching and transfer is patterned to magnetic tunnel junction pattern, finally, repaiied using lateral
Laterally trimming is miniature to the progress of carbon containing figure film layer for shearing process, as shown in Fig. 4 A, Fig. 4 B and Fig. 4 C；
Wherein, for example, the thickness of the carbon containing figure film layer 105 is 150nm-300nm, following one kind or more may be used
Kind method is made：A) chemical vapor deposition, the reactant of use contain C, H and O；B) spin coating (spin-on-Carbon coating)
Technology；C) sputter deposition makees target with carbon；D) ion beam depositing makees target with carbon；The antireflecting inorganic layer 106
Thickness is 10nm-70nm, the general method for using spin coating；The thickness of the photoresist layer 107 is 70nm-150nm.
Preferably, using CF4、CHF3、CH2F2Or SF6Antireflecting inorganic layer 106 is carried out Deng as main etching gas
Etching；Using SO2/(O2、N2And H2), CH4/ (Ar, O2And N2) or HBr/O2It is performed etching Deng to carbon containing figure film layer 105.
It is majored in preferably, carrying out laterally trimming technique, pressure 1mT-100mT using plasma etching industrial cavity
It cuts gas and is selected from (Cl2、HBr、CF4)/(N2、H2Or O2) etc., bias is set as a zero or smaller numerical value.
Second scheme：Definition to magnetic tunnel junction pattern is realized, and using laterally trimming work using photoresist 108
Skill photoresist 108 is carried out laterally trim it is miniature, as fig. 5 a and fig. 5b.
Wherein, the thickness of the photoresist layer 108 is 200nm-900nm, is carried out using plasma etching industrial cavity horizontal
To trimming technique, pressure 1mT-100mT is majored in and is cut gas selected from (Cl2、HBr、CF4)/(N2、H2Or O2) etc., bias is set as
A zero or smaller numerical value.
Preferably, usually one layer of bottom anti-reflection layer (BARC, Bottom Anti- is added in photoresist layer 108
Reflective coating) to reduce standing wave phenomena in a photolithographic process etc., and main etching gas is used as CF4、Cl2Or
HBr (can add certain O2) etc. RIE techniques BARC is performed etching.
Third step S3：Sacrificial mask layer 103 and hard mask film layer 104 are performed etching, and using laterally trimming technique
Continue to trim magnetic tunnel junction pattern to obtain the magnetic tunnel junction mask of more fine size, such as Fig. 6 A and Fig. 6 B institutes
Show.
Wherein, in third step, using CF4And/or CHF3Sacrificial mask film layer is carved as main etching gas
Erosion, using Cl2, SF6,CF4,SF6/CHF3,CF4/CHF3One of be used as main etching gas, Ar, Ne, He, N can be added2As auxiliary
Etching gas is helped to perform etching hard mask film layer.
It majors in and cuts as plasma etching industrial cavity is preferably used to carry out laterally trimming technique, pressure 1mT-100mT
Gas is selected from SF6, CF4Or CHF3Deng, bias be set as a zero or smaller numerical value.
Four steps S4：Magnetic tunnel junction multilayer film 102 is performed etching, to complete the miniaturization system of magnetic tunnel junction
Make, as shown in Figure 7.
As the combination or CO and NH3 for preferably using CH30H, CH3OH and Ar the reactive ion etchings such as combination (RIE,
Reactive Ion Etching) technique or (IBE, Ion Beam Etching) technique is etched to institute using Ar beam-plasmas
Magnetic tunnel junction multilayer film 102 is stated to perform etching.
A kind of method for laterally trimming miniature magnetic tunnel junction pattern provided by the invention, by photoetching process in photoresist
It is upper to define magnetic tunnel junction pattern, then by the lateral trimming technique of two steps, i.e.,：Trimming to carbon containing figure film layer or photoresist,
With the trimming to hard mask film layer, make magnetic tunnel junction pattern dimension miniature to finer size, finally by etching technics
Complete the patterning of magnetic tunnel junction array.In the present invention, as a result of laterally trimming technique, photoetching process is required not
Can be so harsh, 193nm ArF may be used and do the technique even photoetching technique of 248nm KrF, undoubtedly reduce and be produced into
This.In the process, as a result of laterally trimming technique carries out the miniature of magnetic tunnel junction pattern twice, determine in this way in photoetching
Magnetic tunnel junction pattern dimension can be increased when adopted magnetic tunnel junction pattern, reduce magnetic tunnel junction pattern graphical
The risk to disappear during transfer.
It should be noted that a kind of method for laterally trimming miniature magnetic tunnel junction pattern of the present invention includes but not only limits
In preparing magnetic RAM (MRAM), any process sequence or flow are also not necessarily limited to, as long as the product or dress that are prepared
Put with following selection process sequence or flow be prepared it is same or similar.
The preferred embodiment of the present invention has shown and described in above description, as previously described, it should be understood that the present invention is not office
Be limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and available for various other combinations, modification and
Environment, and can be changed in the scope of the invention is set forth herein by the above teachings or related fields of technology or knowledge
It is dynamic.And changes and modifications made by those skilled in the art do not depart from the spirit and scope of the present invention, then it all should be appended by the present invention
In scope of the claims.
Claims (10)
- A kind of 1. method for laterally trimming miniature magnetic tunnel junction pattern, it is characterised in that including：First step：Magnetic tunnel junction multilayer film, hard mask film layer and sacrificial mask film layer are sequentially formed in hearth electrode substrate；Second step：Magnetic tunnel junction pattern is formed, and trimming contracting is carried out to magnetic tunnel junction pattern using laterally trimming technique It is micro-；Third step：Sacrificial mask layer and hard mask film layer are performed etching, and using laterally trimming technique to magnetic tunnel junction Pattern continues to trim to obtain the magnetic tunnel junction mask of more fine size；Four steps：Magnetic tunnel junction multilayer film is performed etching under the protection of hard mask, to complete the figure of magnetic tunnel junction Case miniaturization makes.
- 2. the method as described in claim 1 for laterally trimming miniature magnetic tunnel junction pattern, which is characterized in that in second step In, the definition of magnetic tunnel junction pattern is realized, and lead to using carbon containing figure film layer, antireflecting inorganic layer and photoresist three-decker Over etching is patterned transfer to magnetic tunnel junction pattern, and finally carbon containing figure film layer is carried out laterally using laterally trimming technique It trims miniature.
- 3. the method as described in claim 1 for laterally trimming miniature magnetic tunnel junction pattern, which is characterized in that in second step In, using photoresist to realize the definition to magnetic tunnel junction pattern, and photoresist is carried out laterally using laterally trimming technique It trims miniature.
- 4. the magnetic tunnel junction as described in one of claims 1 to 3, which is characterized in that the thickness of the magnetic tunnel junction multilayer film It spends for 15nm-40nm.
- 5. the method that the transverse direction as described in one of claims 1 to 3 trims miniature magnetic tunnel junction pattern, which is characterized in that institute Hard mask film layer is stated as one kind in Ta, TaN, W or WN, the thickness of the hard mask film layer is 40-100nm；The sacrifice is covered Mould film layer is SiO2, one kind in SiON or SiN, the thickness of the sacrificial mask film layer is 0-40nm.
- 6. the method that the transverse direction as described in one of claims 1 to 3 trims miniature magnetic tunnel junction pattern, which is characterized in that One layer of ruthenium film layer is formed with above magnetic tunnel junction multilayer film as stop layer, the wherein thickness of ruthenium film layer is 2nm-30nm.
- 7. the method that the transverse direction as described in one of claim 1 to 2 trims miniature magnetic tunnel junction pattern, which is characterized in that In second step, using CF4、CHF3、CH2F2Or SF6Antireflecting inorganic layer 106 is performed etching Deng as main etching gas； Using CH4/ (Ar, O2Or N2), SO2/O2, HBr/O2,Or N2/H2It is performed etching Deng to carbon containing figure film layer.
- 8. the method that the transverse direction as described in one of claims 1 to 3 trims miniature magnetic tunnel junction pattern, which is characterized in that In second step, laterally trimming technique is carried out using plasma etching industrial cavity, the pressure for laterally trimming technique is 1mT- 100mT laterally trims majoring in for technique and cuts gas and be selected from：Cl2、HBr、CF4In a kind of and auxiliary give N2、H2And O2In one kind or Person is several, and bias is set as a zero or smaller numerical value.
- 9. the method that the transverse direction as described in one of claims 1 to 3 trims miniature magnetic tunnel junction pattern, which is characterized in that In third step, using CF4And/or CHF3Sacrificial mask film layer is performed etching as main etching gas, using Cl2, SF6, CF4,SF6/CHF3, CF4/CHF3One of be used as main etching gas, Ar, Ne, He, N can be added2As auxiliary etch gas to hard Mask film layer performs etching.
- 10. the method as described in claim 1 for laterally trimming miniature magnetic tunnel junction pattern, which is characterized in that walked in third In rapid, laterally trimming technique is carried out using plasma etching industrial cavity, the pressure for laterally trimming technique is 1mT-100mT, horizontal It cuts gas to majoring in for trimming technique and selects SF6, CF4Or CHF3, bias and be set as a zero or smaller numerical value.
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| CN201611129951.4A CN108232005B (en) | 2016-12-09 | 2016-12-09 | Method for transversely trimming micro magnetic tunnel junction pattern |
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