CN107331770B - Method for patterning magnetic tunnel junction by four layers of masks - Google Patents
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Abstract
The invention provides a method for patterning a magnetic tunnel junction by a four-layer mask, which comprises the following steps: step 1: forming a magnetic tunnel conjunctiva layer unit on a substrate; step 2: forming four mask film layer units on the magnetic tunnel junction film layer unit; and step 3: forming a photoresist unit on the four-layer mask film layer unit; and 4, step 4: patterning the photoresist unit by photolithography; and 5: patterning the four mask film layer units; step 6: patterning the magnetic tunnel junction film layer unit; and 7: trimming the damaged side wall of the patterned magnetic tunnel junction film layer unit by ion beam etching; and 8: and coating the patterned magnetic tunnel film-forming layer unit with a silicon nitride layer. The invention effectively improves the pattern and the outline of the tantalum mask after the tantalum mask is etched, eliminates the consumption of the tantalum mask before the magnetic tunnel junction is etched, and reduces the risk of short circuit of the magnetic random access memory circuit bit line and the magnetic tunnel junction unit.
Description
Technical Field
The invention relates to a method for manufacturing a Magnetic Tunnel Junction (MTJ), in particular to a method for forming a Magnetic Tunnel Junction by patterning a four-layer Mask (QLM) under the condition of 193nm or finer lithography technology, and belongs to the technical field of manufacturing of Magnetic Random Access Memories (MRAM).
Background
In recent years, MRAM using the magnetoresistive effect of MTJ is considered as a solid-state nonvolatile memory in the future, which has features of high speed read and write, large capacity, and low power consumption. Ferromagnetic MTJs are typically sandwich structures with a magnetic memory layer that can change the magnetization direction to record different data; an insulating tunnel barrier layer in between; and the magnetic reference layer is positioned on the other side of the tunnel barrier layer, and the magnetization direction of the magnetic reference layer is unchanged.
In order to be able to record information in such a magnetoresistive element, a writing method based on Spin momentum Transfer (STT) switching technology has been proposed, and such an MRAM is called STT-MRAM. STT-MRAM is further classified into in-plane STT-MRAM and perpendicular STT-MRAM (i.e., pSTT-MRAM), which have better performance depending on the direction of magnetic polarization. In this way, the magnetization direction of the magnetic memory layer can be reversed by supplying a spin-polarized current to the magnetoresistive element. In addition, as the volume of the magnetic memory layer is reduced, the smaller the spin-polarized current to be injected for writing or switching operation. Therefore, this writing method can achieve both device miniaturization and current reduction.
Meanwhile, the pSTT-MRAM can be well matched with the most advanced technology node in terms of scale, because the required switching current is reduced when the size of the MTJ element is reduced. It is therefore desirable to make the pSTT-MRAM device extremely small in size, with very good uniformity, and with minimal impact on the MTJ magnetic properties, by a fabrication method that also achieves high yields, high precision reading, high reliability writing, low power consumption, and maintains a temperature coefficient suitable for good data storage. Meanwhile, the write operation in the nonvolatile memory is based on the resistance state change, so that it is necessary to control the damage and shortening of the life of the MTJ memory device caused thereby.
However, the fabrication of a small MTJ device may increase the fluctuation of MTJ resistance, so that the write voltage or current of pSTT-MRAM may fluctuate greatly, which may impair the performance of MRAM. In current MRAM fabrication processes, a heavy metal (such as tantalum) is deposited on top of the MTJ, acting both as a hard mask for MTJ etch and as a top electrode conductive channel. The requirement of 193nm or finer lithography to fabricate MTJ cells of 65nm or smaller size limits the thickness of the photoresist layer
Within. However, a thinner photoresist layer may be required in conjunction with a thinner tantalum (Ta) hard mask layer to ensure that the hard mask pattern is completely formed before the photoresist mask is consumed during the etch pattern transfer process. Therefore, on the one hand, the tantalum (Ta) film layer needs to have a sufficient thickness to complete the full etching of the MTJ; on the other hand, the tantalum (Ta) film layer cannot be too thick, which would require a thicker photoresist mask for pattern transfer, and the increased photoresist thickness would increase the tendency of the photoresist pattern to collapse, resulting in more rework and higher cost. Unfortunately, a thin tantalum (Ta) hard mask layer can cause this potential problem of current shorting and limit the time available for etching to form MTJ patterns because the hard mask can also erode during pattern transfer. Therefore, in fabricating MTJ cells of 65nm or less size, other schemes than simple tantalum (Ta) hard masks must be used.
In order to overcome the above-mentioned problemsA drawback of the tantalum (Ta) layer hard mask, us patent 8,722,543 discloses a dual layer hard mask pattern transfer method such that the MTJ located above the Bottom Electrode (BE) is patterned. The bilayer hard mask includes a first mask layer of tantalum (Ta), and a dielectric layer (SiN or SiO) over the tantalum (Ta)2Etc.). However, for 193nm or finer lithography, the photoresist and Anti-Reflection Layer (ARL) are not sufficient to protect the dielectric Layer from being exposed before the tantalum (Ta) film is completely etched away. The dielectric mask is also almost etched exhaust away before the tantalum (Ta) mask has been completely over-etched. Therefore, it is difficult for the tantalum (Ta) film mask to form sharp and clear sidewalls, resulting in an ill-defined mask, thereby affecting the underlying MTJ pattern.
In addition, in standard Complementary Metal Oxide Semiconductor (CMOS) processes, multi-layer masks are also widely used to etch shallow trenches, gates, etc. in a variety of features with line widths of 65nm and below (see U.S. Pat. No. 8,946,091) to obtain well-defined structures.
Disclosure of Invention
The invention is helpful to construct the MTJ with extremely small size to solve a series of problems encountered in the patterning transfer process when preparing the MTJ cell with 65nm or less size. Such as: too thin a photoresist, Ta to SiN (or SiO)2) The selectivity ratio is too low, resulting in excessive consumption of the tantalum mask prior to MTJ etching, and ultimately resulting in shorting between the MRAM circuit bit line and the MTJ cell.
In order to solve the above technical problems, the present invention provides a method of four-layer mask patterning a magnetic tunnel junction. The specific structure of the QLM is: a heavy metal tantalum (Ta) film layer; dielectric layer (SiN, SiON or SiO)2) (ii) a A carbon film layer; the silicon-containing anti-reflection layers are sequentially stacked upward.
Patterning of MTJ, first by CF4，CH2F2Or SF6Transferring the pattern from the photoresist mask to the silicon-containing anti-reflection layer by a dry etching process with the main etching gas;
then, passing through SO2/O2，HBr/O2，N2/H2Or CH4/O2/N2The dry etching process with/Ar and the like as main etching gases transfers the pattern to the lower carbon film layer;
then, by CF4Dry etching process with main etching gas as main etching gas, transferring to dielectric film layer, and final etching with main etching gas as CF4，Cl2/Ar，CH4/Ar，CHF3/O2Or CHF3/N2Etc. to transfer the pattern to the heavy metal tantalum (Ta) layer.
The specific technical scheme of the invention is as follows:
a method for four-layer mask patterning of a magnetic tunnel junction includes the following steps:
step 1: forming a magnetic tunnel conjunctiva layer unit on a substrate;
step 1.1: forming a seed base layer;
step 1.2: forming a magnetic memory functional unit on the seed substrate;
step 1.2.1 a: forming a magnetic memory layer on the seed base layer;
step 1.2.2 a: forming a tunnel barrier layer on the magnetic memory layer;
step 1.2.3 a: forming a magnetic reference layer on the tunnel barrier layer;
or:
step 1.2.1 b: forming a magnetic reference layer on the seed base layer;
step 1.2.2 b: forming a tunnel barrier layer on the magnetic reference layer;
step 1.2.3 b: forming a magnetic memory layer on the tunnel barrier layer;
step 1.3: a capping layer is formed on the magnetic memory functional unit.
Step 2: forming four mask film layer units on the magnetic tunnel junction film layer unit;
step 2.1: forming a tantalum film layer on the magnetic tunnel junction film layer unit, wherein the thickness of the tantalum film layer is 40-100 nm;
step 2.2: forming a dielectric layer on the tantalum mask film layer, wherein the thickness of the dielectric layer is 20-200 nm;
step 2.3: forming a carbon film layer on the dielectric film layer, wherein the thickness of the carbon film layer is 20-200 nm;
step 2.4: and forming a silicon-containing anti-reflection layer on the carbon film layer, wherein the thickness of the silicon-containing anti-reflection layer is 30-100 nm.
And step 3: forming a photoresist unit on the four-layer mask film layer unit;
and 4, step 4: patterning the photoresist unit by photolithography;
and 5: patterning the four mask film layer units;
step 5.1: patterning the silicon-containing anti-reflective layer. The method comprises the following specific steps: using the patterned photoresist unit as a mask, and forming a silicon-containing anti-reflection layer pattern by reactive ion beam etching (RIE), wherein the main etching gas is CF4，CH2F2Or SF6After the step is finished, a part of photoresist is arranged on the silicon-containing anti-reflection layer;
step 5.2: and patterning the carbon film layer. The method comprises the following specific steps: etching the carbon film layer using the patterned photoresist and the silicon-containing anti-reflection layer as a mask to obtain a patterned carbon film layer, the main etching gas being SO2/O2，N2/H2，HBr/O2Or CH4/O2/N2Ar, etc. after this step is completed, the patterned silicon-containing antireflective layer will remain;
step 5.3: and patterning the dielectric layer. The method comprises the following specific steps: using patterned silicon-containing antireflective layers and carbon film layers as masks, by using predominantly CF4Etching the dielectric layer by using a dry etching process which is used as main etching gas, and patterning the dielectric layer; the silicon-containing anti-reflection layer is consumed in the process of patterning the first dielectric layer;
step 5.4: and patterning the tantalum film layer. The method comprises the following specific steps: patterning the tantalum film layer through the patterned dielectric film layer; the main etching gas in this step is CF4，Cl2/Ar，CH4/Ar，CHF3/O2Or CHF3/N2Etc.; adjusting the thickness of the carbon film layer to complete the pattern transfer, and forming a dielectric layerWill be fully or partially retained.
Step 6: and patterning the magnetic tunnel junction film layer unit. The method comprises the following specific steps: etching the magnetic tunnel junction film layer unit by reactive ion etching with the patterned four-layer mask film layer unit as a mask, wherein the main etching gas of the reactive ion beam etching is methanol, ethanol or CO/NH3And the like.
And 7: trimming the damaged side wall of the patterned magnetic tunnel junction film layer unit by ion beam etching; thereby improving the damaged side wall of the patterned magnetic tunnel junction film layer unit.
And 8: and coating the patterned magnetic tunnel conjunctiva layer unit with a silicon nitride layer, specifically, immediately protecting the side wall of the magnetic tunnel conjunctiva layer unit trimmed by ion beam etching by using silicon nitride.
The invention has the beneficial effects that: when an MRAM circuit with the thickness of 65nm and below is prepared, the QLM structure effectively solves the problem that the used photoresist is too thin and weak under 193nm or finer exposure conditions, so that MTJ patterning transfer cannot be completed sufficiently, and meanwhile, more sacrificial layers are provided compared with the conventional double-layer hard mask, a tantalum (Ta) mask cannot be twisted before MTJ etching, and the film thickness cannot be thinned. Therefore, the patterns and the contours of the tantalum (Ta) die after etching are effectively improved, the consumption of the tantalum (Ta) die before MTJ etching is eliminated, and the risk of short circuit of the MRAM circuit bit line and the MTJ unit is reduced.
The conception, the specific structure and the technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, the features and the effects of the present invention.
Drawings
FIG. 1: according to the method for patterning the magnetic tunnel junction by the four-layer mask (QLM), the QLM is sequentially deposited on the MTJ film layer, and the schematic diagram is formed after the MTJ pattern is defined by photoetching and patterning;
FIG. 2: according to the method for patterning a magnetic tunnel junction with a four-layer mask (QLM) of the present invention, a schematic diagram is shown after etching of an anti-reflection layer containing silicon;
FIG. 3: according to the method for patterning a magnetic tunnel junction by using a four-layer mask (QLM), a schematic diagram is shown after a carbon film layer is etched;
FIG. 4: a schematic diagram after dielectric layer etching according to the method of four layer mask (QLM) patterning magnetic tunnel junctions of the present invention;
FIG. 5: according to the method for patterning the magnetic tunnel junction by the four-layer mask (QLM), the cross section schematic diagram is shown after the tantalum (Ta) film is etched and the residual organic matter and the carbon film layer are removed by ashing with oxygen;
FIG. 6: according to the method for patterning a magnetic tunnel junction by using a four-layer mask (QLM), the schematic diagram is shown after the MTJ is etched and trimmed by using an ion beam;
FIG. 7: according to the method for patterning a magnetic tunnel junction by using a four-layer mask (QLM), the schematic diagram is shown after a silicon nitride layer wraps a patterned MTJ film layer unit;
shown in the figure: 100-substrate, 101-MTJ film layer, 102-tantalum (Ta) film layer, 103-dielectric layer, 104-carbon film layer, 105-silicon-containing anti-reflective layer, 106-PR, 107-silicon nitride.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It is to be noted that the drawings are in simplified form and are not to precise scale, which is provided for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
A method of four-layer mask patterning of MTJs includes, but is not limited to, the fabrication of Magnetic Random Access Memories (MRAMs) and is not limited to any process sequence or flow as long as the resulting product or device is made the same or similar to that made by the preferred process sequence or flow below. The method comprises the following steps:
step one, forming an MTJ film layer unit on a substrate;
step two, forming a QLM film layer unit on the MTJ film layer unit;
step three, forming a Photoresist (PR) unit on the QLM film layer unit;
patterning the photoresist unit through a photoetching process;
step five, patterning the QLM film layer unit;
sixthly, patterning the MTJ film layer unit;
step seven, trimming the damaged side wall of the patterned magnetic tunnel junction film layer unit by ion beam etching;
and step eight, coating the patterned MTJ film layer unit with a silicon nitride layer.
The embodiments are described in detail below with reference to the accompanying drawings. The drawings are schematic diagrams or conceptual diagrams, and the relationship between the thickness and the width of each part, the proportional relationship between the parts and the like are not completely consistent with the actual values.
As shown in fig. 1, although the product fabrication has various process sequences, it is preferable to fabricate an MTJ film layer unit 101 on a fabricated Bottom Electrode (BE) substrate 100, in which a series of necessary films are sequentially stacked to form a functional basis of MTJ before fabricating MTJ.
A step of forming a QLM:
the metal tantalum (Ta) film layer 102 is formed first, preferably with a thickness of 40-100 nm, and the tantalum (Ta) film layer 102 can be formed by physical sputtering, ion beam deposition or other methods using a tantalum (Ta) target.
Next, a dielectric layer 103(SiN, SiON, or SiO) is formed on the tantalum (Ta) film 1022) Preferably, the thickness is 20 to 200 nm. If the dielectric layer 103 is SiN, it can be formed by one or more of the following methods: a) chemical vapor deposition, wherein the adopted reactants comprise Si, N and H; b) physical sputtering deposition using Si target and Ar + N as sputtering gas2Or Ar + NH3(ii) a If SiON is used for the dielectric layer 103, it is formed by one or more of the following methods: a) chemical vapor deposition, wherein the adopted reactant contains Si, O, N and H; b) physical sputtering deposition, wherein a Si target is used, and sputtering gas contains Ar, O and N; if the dielectric layer 103 is SiO2The compound is prepared by one or more of the following methods: a) chemical vapor deposition, wherein the adopted reactants comprise Si, H and O; b) silicon oxide spin coating technology; c) physical sputter deposition using Si target or SiO2Target, sputtering gas Ar or Ar + O2(ii) a d) Ion beam deposition using SiO2A target.
Then, a carbon film layer 104 is formed on the dielectric layer 103, preferably with a thickness of 20-200 nm. The carbon film layer 104 may be formed by one or more of the following methods: a) chemical vapor deposition, wherein the adopted reactants comprise C, H, O and the like; b) spin coating technology; c) physical sputtering deposition, using carbon as a target material; d) ion beam deposition using carbon as the target.
Then, a silicon-containing anti-reflection layer 105 and a photoresist layer (PR)106 are formed on the carbon film layer 104 of the QLM, and the preferred thickness of the silicon-containing anti-reflection layer 105 is 30 to 100nm, and one or more of the following methods may be used: a) chemical vapor deposition, wherein the reactant comprises several of Si, C, N, H and O; b) and (3) a silicide spin coating technology.
Finally, a photoresist layer 106 is patterned, as shown in FIG. 1.
As shown in fig. 2, the MTJ pattern is transferred patternwise from a photoresist layer 106 to a silicon-containing antireflective layer 105. This step is realized by Reactive Ion Etching (RIE), which reacts CF as the main Etching gas4，CH2F2Or SF6And the like. This is accomplished with a portion of the photoresist layer 106 over the silicon-containing antireflective layer 105.
As shown in fig. 3, the carbon film layer 104 is etched using the patterned photoresist layer 106 and the silicon-containing anti-reflective layer 105 as a mask to obtain a patterned carbon film layer. In this step, the main etching gas is SO2/O2，HBr/O2，N2/H2Or CH4/O2/N2Ar, etc., after this step is completed, the patterned silicon-containing antireflective layer will remain.
As shown in fig. 4, using the patterned silicon-containing anti-reflection layer 105 and the carbon film layer 104 as a mask, through the CF4A dry etch process, such as a main etch gas, etches the dielectric layer 103 such that the dielectric layer 103 is patterned. The silicon-containing antireflective layer 105 will be consumed during the patterning process.
As shown in fig. 5, a tantalum (Ta) mask film layer 102 is patterned through a patterned dielectric layer 103. The main etching gas in this step is CF4，Cl2/Ar，CH4/Ar，CHF3/O2Or CHF3/N2And the like. By adjusting the thickness of the carbon mask film layer 104, the dielectric layer may be selected to be completely or partially retained. After the patterned transfer is completed, the remaining organic and carbon layers are removed by an oxygen ashing process.
After that, the MTJ film layer 101 over the substrate 100 is patterned by etching using the patterned dielectric layer 103 and the tantalum (Ta) film layer 102 as masks, and the main etching gas contains methanol (CH) as an etchant3OH), ethanol (CH)3CH2OH) or CO + NH3And the like. Then, by using Ar or Ar + O2And (3) finishing the damaged side wall of the patterned magnetic tunnel junction film layer unit by using a gas ion beam finishing process. Finally, a magnetically independent MTJ cell is formed on the substrate 100, as shown in fig. 6.
Finally, the patterned MTJ film layer unit is covered with a silicon nitride layer, as shown in fig. 7.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (19)
1. A method of four-layer mask patterning a magnetic tunnel junction, comprising:
step 1: forming a magnetic tunnel conjunctiva layer unit on a substrate;
step 2: forming a four-layer mask film layer unit on the magnetic tunnel junction film layer unit, wherein the four-layer mask comprises a tantalum film layer, a dielectric layer, a carbon film layer and a silicon-containing anti-reflection layer;
and step 3: forming a photoresist unit on the four-layer mask film layer unit;
and 4, step 4: patterning the photoresist unit by photolithography;
and 5: patterning the four-layer mask film layer unit, including: patterning a silicon-containing anti-reflection layer, patterning a carbon film layer, patterning a dielectric layer and patterning a tantalum film layer;
step 6: patterning the magnetic tunnel conjunctiva layer unit;
and 7: trimming the damaged side wall of the patterned magnetic tunnel junction film layer unit by ion beam etching;
and 8: and coating the patterned magnetic tunnel film-forming layer unit with a silicon nitride layer.
2. The method of four-layer mask patterning a magnetic tunnel junction of claim 1, wherein forming the magnetic tunnel junction film layer unit comprises:
step 1.1: forming a seed base layer;
step 1.2: forming a magnetic memory functional unit on the seed base layer;
step 1.3: and forming a covering layer on the magnetic memory functional unit.
3. The method of claim 2, wherein forming the magnetic memory functional cell comprises:
step 1.2.1 a: forming a magnetic memory layer on the seed base layer;
step 1.2.2 a: forming a tunnel barrier layer on the magnetic memory layer;
step 1.2.3 a: a magnetic reference layer is formed on the tunnel barrier layer.
4. The method of claim 2, wherein forming the magnetic memory functional cell comprises:
step 1.2.1 b: forming a magnetic reference layer on the seed base layer;
step 1.2.2 b: forming a tunnel barrier layer on the magnetic reference layer;
step 1.2.3 b: a magnetic memory layer is formed on the tunnel barrier layer.
5. The method of four-mask patterning a magnetic tunnel junction of claim 1, wherein forming the four-mask film layer unit comprises:
step 2.1: forming a tantalum film layer on the magnetic tunnel junction film layer unit, wherein the thickness of the tantalum film layer is 40-100 nm;
step 2.2: forming a dielectric layer on the tantalum mask film layer, wherein the thickness of the dielectric layer is 20-200 nm;
step 2.3: forming a carbon film layer on the dielectric layer, wherein the thickness of the carbon film layer is 20-200 nm;
step 2.4: and forming a silicon-containing anti-reflection layer on the carbon mask film layer, wherein the thickness of the silicon-containing anti-reflection layer is 30-100 nm.
6. The method of claim 5, wherein the forming of the tantalum film layer comprises one or more of:
method 2.1 a: physical sputtering deposition, wherein a Ta target is used, and Ar is adopted as sputtering gas;
method 2.1 b: ion beam deposition using a Ta target.
7. The method of claim 5, wherein the dielectric layer is SiN, SiON, or SiO2。
8. The method of claim 7, wherein the forming of the SiN comprises one or more of:
method 2.2 a: chemical vapor deposition, wherein the adopted reactants comprise Si, N and H;
method 2.2 b: physical sputtering deposition using Si target and Ar + N as sputtering gas2Or Ar + NH3。
9. The method of claim 7, wherein the forming of the SiON comprises one or more of:
method 2.2 c: chemical vapor deposition, wherein the adopted reactant contains Si, O, N and H;
method 2.2 d: physical sputtering deposition, using a Si target, with a sputtering gas containing Ar, O and N.
10. The method of four-layer mask patterning a magnetic tunnel junction of claim 7, wherein said SiO2The forming of (a) includes one or more of the following:
method 2.2 e: chemical vapor deposition, wherein the adopted reactants comprise Si, H and O;
method 2.2 f: silicon oxide spin coating technology;
method 2.2 g: physical sputter deposition using Si target or SiO2Target, sputtering gas Ar or Ar + O2；
Method 2.2 h: ion beam deposition using SiO2A target.
11. The method of claim 5, wherein the forming the carbon film layer comprises one or more of:
method 2.3 a: chemical vapor deposition is adopted, and the adopted gas reactant comprises C and H;
method 2.3 b: physical sputtering deposition is adopted, and a carbon target is adopted;
method 2.3 c: ion beam deposition was used, with a carbon target.
12. The method of claim 5, wherein the forming the silicon-containing antireflective layer comprises one or more of:
method 2.4 a: chemical vapor deposition, wherein the reactant comprises several of Si, C, N, H and O;
method 2.4 b: and (3) a silicide spin coating technology.
13. The method of claim 1, wherein the silicon-containing antireflective layer is patterned by: using the patterned photoresist unit as a mask, and forming a silicon-containing anti-reflection layer pattern by Reactive Ion Etching (RIE), wherein the main etching gas is CF4，CH2F2Or SF6And after the step is finished, a part of photoresist is arranged on the silicon-containing anti-reflection layer.
14. The method of claim 1, wherein the carbon film layer is patterned by the steps of: etching the carbon film layer by using the patterned photoresist and the silicon-containing anti-reflection layer as a mask to obtain the patterned carbon film layer, wherein the main etching gas is SO2/O2，N2/H2，HBr/O2Or CH4/O2/N2and/Ar, after this step is completed, the patterned silicon-containing anti-reflective layer will be retained.
15. The method of claim 1, wherein the step of patterning the dielectric layer comprises: using patterned silicon-containing antireflective layers and carbon film layers as masks by containing CF4Etching the dielectric layer for a dry etching process of a main etching gas, and patterning the dielectric layer; the silicon-containing antireflective layer is consumed during the patterning of the dielectric layer.
16. The method of claim 1, wherein the tantalum film layer unit patterning comprises: patterning the tantalum film layer through the patterned dielectric layer; the main etching gas in this step is CF4，Cl2/Ar，CH4/Ar，CHF3/O2Or CHF3/N2(ii) a By adjusting the thickness of the carbon film layer, the dielectric layer can be completely or partially remained after the patterning transfer is completed.
17. The method of claim 1, wherein the step of patterning the magnetic tunnel junction film layer unit comprises: etching the magnetic tunnel junction film layer unit by reactive ion etching by using the patterned four-layer mask film layer unit as a mask, wherein the reactive ion etching adopts main etching gas of methanol, ethanol or CO/NH3。
18. The method of claim 1, wherein the patterned magnetic tunnel junction film unit is trimmed using ion beam etching to improve damaged sidewalls of the patterned magnetic tunnel junction film unit.
19. The method of claim 1, wherein the ion beam etched and trimmed magnetic tunnel junction film unit is protected by silicon nitride on the sidewalls.
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| CN107331770A (en) | 2017-11-07 |
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