CN108231735A - Voltage controlled oscillator - Google Patents
Voltage controlled oscillator Download PDFInfo
- Publication number
- CN108231735A CN108231735A CN201711393249.3A CN201711393249A CN108231735A CN 108231735 A CN108231735 A CN 108231735A CN 201711393249 A CN201711393249 A CN 201711393249A CN 108231735 A CN108231735 A CN 108231735A
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- circuit
- inductance
- combinational circuit
- voltage controlled
- controlled oscillator
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- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000002452 interceptive effect Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/288—Shielding
- H01F27/2885—Shielding with shields or electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/008—Electric or magnetic shielding of printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0086—Printed inductances on semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The present invention provides a kind of voltage controlled oscillator, including：Inductance, it includes the first connecting pin, second connection end, intermediate node, the first line being connected between the first connecting pin and intermediate node, the second circuit being connected between intermediate node and second connection end, first line and the second circuit extend to form a circle or multiturn coil, positioned at the metal screen layer of inductance lower floor；Circuit structure under metal screen layer.Compared with prior art, other main circuits of voltage controlled oscillator are put into below inductance, can significantly reduce the area of entire voltage controlled oscillator in this way by the voltage controlled oscillator in the present invention, increase metal screen layer between inductance and other main circuits simultaneously, prevent interfering with each other for the two.
Description
【Technical field】
The present invention relates to radio frequency arts, more particularly to a kind of voltage controlled oscillator.
【Background technology】
With the ever-reduced transistor size of semiconductor technology, resistance, the size of capacitance are also less and less.And inductance is not
It can accordingly be reduced with technique.So the proportion of the area in radio circuit shared by inductance is increasing, especially voltage controlled oscillation
It can occupy very big chip area to the inductance of device, and the area for leading to entire voltage controlled oscillator is larger.
For more than present situation, the present invention proposes a kind of improved voltage controlled oscillator, can occupy smaller chip face
Product.
【Invention content】
The purpose of the present invention is to provide a kind of improved voltage controlled oscillators, can occupy smaller chip area.
To solve the above-mentioned problems, the present invention provides a kind of voltage controlled oscillator, including：Inductance, including the first connection
End, intermediate node, the first line being connected between the first connecting pin and intermediate node, is connected to middle node at second connection end
The second circuit between point and second connection end, first line and the second circuit extend to form a circle or multiturn coil, positioned at electricity
Feel the metal screen layer of lower floor；Circuit structure under metal screen layer.
Further, the zhou duicheng tuxing along a symmetry axis is integrally formed in the inductance, which passes through the coil
Center, the first connecting pin is located at the side of the symmetry axis, and second connection end is located at the opposite side of the symmetry axis and connects with first
End is connect along the symmetrical axial symmetry.
Further, the circuit structure under metal screen layer is symmetrical arranged along the symmetry axis.
Further, the voltage controlled oscillator further includes：First medium layer between inductance and metal screen layer；
Second dielectric layer between metal screen layer and the circuit structure.
Further, the circuit structure under metal screen layer includes：Differential pair transistors combinational circuit；Two pole of transfiguration
Pipe combinational circuit；Capacitor array combinational circuit；Common mode feedback circuit combinational circuit；The intermediate node of wherein described inductance passes through gold
Belong to via with an input terminal of the operational amplifier in the common mode feedback circuit combinational circuit to be connected；The first of the inductance
Connecting pin and second connection end are connected respectively with the first node in differential pair transistors combinational circuit and second node；Capacitance battle array
The both ends of row combinational circuit are connected respectively with the first node in differential pair transistors combinational circuit and second node；Two pole of transfiguration
The both ends of pipe combinational circuit are connected respectively with the first node in differential pair transistors combinational circuit and second node.
Further, differential pair transistors combinational circuit, varactor combinational circuit, capacitor array combinational circuit and altogether
Cmfb circuit combinational circuit is from left to right arranged successively, and wherein differential pair transistors combinational circuit is close to the first of the inductance
Connecting pin, second connection end, common mode feedback circuit combinational circuit is close to the intermediate node of the inductance.
Compared with prior art, the voltage controlled oscillator in the present invention, other main circuits of voltage controlled oscillator are put into
Below inductance, can significantly reduce the area of entire voltage controlled oscillator in this way, at the same inductance and other main circuits it
Between increase metal screen layer, what is both prevented interferes with each other.
【Description of the drawings】
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein：
Fig. 1 is the electrical block diagram of voltage controlled oscillator in one embodiment in the present invention；
Fig. 2 is the physical arrangement schematic top plan view of the voltage controlled oscillator in the present invention；
Fig. 3 is the physical arrangement schematic top plan view of the voltage controlled oscillator in the present invention, and wherein inductance has been not shown；
Fig. 4 is the physical arrangement schematic cross-section of the voltage controlled oscillator in the present invention.
【Specific embodiment】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein refers to may be included at least one realization method of the present invention
A particular feature, structure, or characteristic." in one embodiment " that different places occur in the present specification not refers both to same
A embodiment, nor the individual or selective embodiment mutually exclusive with other embodiment.Unless stated otherwise, herein
In the word of expression electric property coupling couple, be connected, connecting represent directly or indirectly to be electrical connected.
The present invention provides a kind of voltage controlled oscillator, by the way that other main circuits of voltage controlled oscillator are put under inductance
Face can significantly reduce the area of entire voltage controlled oscillator, while increase gold between inductance and other main circuits in this way
Belong to shielded layer, prevent interfering with each other for the two.
Fig. 1 is the electrical block diagram of voltage controlled oscillator in one embodiment in the present invention.Fig. 2 is in the present invention
Voltage controlled oscillator physical arrangement schematic top plan view；Fig. 3 is that the physical arrangement of the voltage controlled oscillator in the present invention overlooks signal
Figure, wherein inductance is are illustrated；Fig. 4 is the physical arrangement schematic cross-section of the voltage controlled oscillator in the present invention.
As described in Fig. 1-4, the voltage controlled oscillator include inductance L1, positioned at inductance L1 lower floors metal screen layer 150,
Circuit structure under metal screen layer.Circuit structure under metal screen layer includes：Differential pair transistors combination electricity
Road 140, varactor combinational circuit (varactor bank) 130；Capacitor array combinational circuit (capacitance bank)
120；Common mode feedback circuit combinational circuit 110.
On chip, inductance L1 usually requires to occupy very big area, in order to reduce the area of inductance L1, needs to inductance
The structure of L1 carries out close arrangement.As shown in Figure 2, the inductance L1 includes the first connecting pin RP, second connection end RN, centre
Node CT, the first line being connected between the first connecting pin RP and intermediate node CT are connected to the companies of intermediate node CT and second
The second circuit between the RN of end is connect, first line and the second circuit extend to form a circle or multiturn coil.The inductance L1 is whole
The zhou duicheng tuxing along a symmetry axis A1 is formed, which passes through the center of the coil, and it is right that the first connecting pin RP is located at this
Claim the side of axis, second connection end RN is located at the opposite side of the symmetry axis and with the first connecting pin RP along the symmetrical axial symmetry.
The part of first line and the second crossing elimination is located in different layers.
The common mode feedback circuit combinational circuit 110 includes operational amplifier OP1 and PMOS transistor M5.The inductance L1
Intermediate node CT pass through one of the operational amplifier OP1 in metallic vias 151 and the common mode feedback circuit combinational circuit 110
A input terminal is connected.
The differential pair transistors combinational circuit 140 include PMOS difference transistors M3, M4 and NMOS differential transistor M1,
M2 is formed with first node A, second node B and third node C.The connections of the first connecting pin RP of the inductance L1 and second
Hold RN by metallic vias (not shown) respectively with the first node A and second node B in differential pair transistors combinational circuit 140
It is connected.The drain electrode of PMOS transistor M5 is connected with third node.
The both ends of capacitor array combinational circuit 120 respectively with the first node A in differential pair transistors combinational circuit 140 and
Second node B is connected.The both ends of varactor combinational circuit 130 respectively in differential pair transistors combinational circuit 140
One node A is connected with second node B.
In this embodiment, differential pair transistors combinational circuit 140, varactor combinational circuit 130, capacitor array
Combinational circuit 120 and common mode feedback circuit combinational circuit 110 are from left to right arranged successively, wherein differential pair transistors combinational circuit
140 close to the first connecting pin of the inductance L1, second connection end, and common mode feedback circuit combinational circuit 110 is close to the inductance
The intermediate node of L1 can design in this way in order to cabling.Preferably, the circuit structure under metal screen layer is along described symmetrical
Axis A1 is symmetrical arranged, and can significantly reduce influence of the circuit structure to inductance L1 in this way.
As shown in Figure 4, voltage controlled oscillator further includes：First medium between inductance L1 and metal screen layer 150
Layer 160；Second dielectric layer 170 between metal screen layer 150 and the circuit structure.
In the present invention, the word that the expressions such as " coupling ", connected, " company ", " connecing " are electrical connected, unless otherwise instructed, then
Represent direct or indirect electric property coupling.
It should be pointed out that any change that one skilled in the art does the specific embodiment of the present invention
All without departing from the range of claims of the present invention.Correspondingly, the scope of the claims of the invention is also not merely limited to
In previous embodiment.
Claims (6)
1. a kind of voltage controlled oscillator, which is characterized in that it includes：
Inductance including the first connecting pin, second connection end, intermediate node, is connected between the first connecting pin and intermediate node
First line, the second circuit for being connected between intermediate node and second connection end, first line and the second circuit extension shape
Into a circle or multiturn coil,
Positioned at the metal screen layer of inductance lower floor；
Circuit structure under metal screen layer.
2. voltage controlled oscillator according to claim 1, which is characterized in that
The zhou duicheng tuxing along a symmetry axis is integrally formed in the inductance, which passes through the center of the coil, and first connects
Connect end positioned at the symmetry axis side, second connection end be located at the opposite side of the symmetry axis and with the first connecting pin along it is described symmetrically
Axial symmetry.
3. voltage controlled oscillator according to claim 2, which is characterized in that
Circuit structure under metal screen layer is symmetrical arranged along the symmetry axis.
4. voltage controlled oscillator according to claim 1, which is characterized in that it is further included：
First medium layer between inductance and metal screen layer；
Second dielectric layer between metal screen layer and the circuit structure.
5. voltage controlled oscillator according to claim 4, which is characterized in that the circuit structure packet under metal screen layer
It includes：
Differential pair transistors combinational circuit；
Varactor combinational circuit；
Capacitor array combinational circuit；
Common mode feedback circuit combinational circuit；
The intermediate node of wherein described inductance passes through the operation amplifier in metallic vias and the common mode feedback circuit combinational circuit
One input terminal of device is connected；
First connecting pin of the inductance and second connection end respectively with the first node in differential pair transistors combinational circuit and
Second node is connected；
The both ends of capacitor array combinational circuit respectively with the first node in differential pair transistors combinational circuit and second node phase
Even；
The both ends of varactor combinational circuit respectively with the first node and second node in differential pair transistors combinational circuit
It is connected.
6. voltage controlled oscillator according to claim 5, which is characterized in that
Differential pair transistors combinational circuit, varactor combinational circuit, capacitor array combinational circuit and common mode feedback circuit group
It closes circuit from left to right to arrange successively, wherein differential pair transistors combinational circuit is close to the first connecting pin of the inductance, second
Connecting pin,
Common mode feedback circuit combinational circuit is close to the intermediate node of the inductance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711393249.3A CN108231735B (en) | 2017-12-21 | 2017-12-21 | Voltage controlled oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711393249.3A CN108231735B (en) | 2017-12-21 | 2017-12-21 | Voltage controlled oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108231735A true CN108231735A (en) | 2018-06-29 |
| CN108231735B CN108231735B (en) | 2020-01-14 |
Family
ID=62648348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711393249.3A Active CN108231735B (en) | 2017-12-21 | 2017-12-21 | Voltage controlled oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108231735B (en) |
Citations (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1259769A (en) * | 1998-12-29 | 2000-07-12 | 皇家菲利浦电子有限公司 | Integrated circuit of inductance element |
| US20020033741A1 (en) * | 2000-09-15 | 2002-03-21 | Alcatel | Voltage controlled oscillator with automatic center frequency calibration |
| CN1450717A (en) * | 2002-04-10 | 2003-10-22 | 络达科技股份有限公司 | Voltage control oscillator with low phase noise |
| CN1622448A (en) * | 2003-11-26 | 2005-06-01 | 阿尔卑斯电气株式会社 | Voltage controlled oscillator small in reduction of inductance and Q |
| CN1777021A (en) * | 2005-12-06 | 2006-05-24 | 东南大学 | Voltage controlled oscillator |
| CN101064501A (en) * | 2006-04-24 | 2007-10-31 | 中国科学院微电子研究所 | Self-adaptive circuit of on-chip integrated low-noise active filter |
| US20080143446A1 (en) * | 2006-12-15 | 2008-06-19 | Chih-Wei Yao | Low Phase-Noise Oscillator |
| CN101409530A (en) * | 2007-10-12 | 2009-04-15 | 瑞昱半导体股份有限公司 | Voltage-controlled oscillator |
| CN102306642A (en) * | 2011-09-22 | 2012-01-04 | 华东师范大学 | On-chip integrated inductor with adjustable inductance value |
| US8159308B1 (en) * | 2009-04-20 | 2012-04-17 | Marvell International Ltd. | Low power voltage controlled oscillator (VCO) |
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| CN103501175A (en) * | 2013-10-24 | 2014-01-08 | 清华大学 | Millimeter-wave phase-locked loop |
| CN103518260A (en) * | 2011-03-21 | 2014-01-15 | 吉林克斯公司 | Symmmetrical center tap inductor structure |
| US20150200627A1 (en) * | 2014-01-10 | 2015-07-16 | International Business Machines Corporation | Phase noise reduction in voltage controlled oscillators |
| CN105185769A (en) * | 2014-03-11 | 2015-12-23 | 阿尔特拉公司 | Inductor structures with improved quality factor |
| CN105529993A (en) * | 2015-12-22 | 2016-04-27 | 江苏星宇芯联电子科技有限公司 | Self-voltage stabilizing LC voltage-controlled oscillator |
| US9344036B1 (en) * | 2015-02-06 | 2016-05-17 | Qualcomm Incorporated | Voltage-controlled oscillator (VCO) with amplitude control |
| CN106133632A (en) * | 2014-04-03 | 2016-11-16 | 高通股份有限公司 | Power-efficient, low noise and the actuator insensitive to technique/voltage/temperature (PVT) for voltage controlled oscillator (VCO) |
| US20170179884A1 (en) * | 2015-12-16 | 2017-06-22 | International Business Machines Corporation | Vco selection and amplitude management using center tap inductor |
| CN107210707A (en) * | 2014-12-16 | 2017-09-26 | 赛灵思公司 | Voltage controlled oscillator including MuGFET |
| CN107425812A (en) * | 2017-03-09 | 2017-12-01 | 中国科学院微电子研究所 | Millimeter wave voltage-controlled oscillator based on dual-mode inductor |
-
2017
- 2017-12-21 CN CN201711393249.3A patent/CN108231735B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1259769A (en) * | 1998-12-29 | 2000-07-12 | 皇家菲利浦电子有限公司 | Integrated circuit of inductance element |
| US20020033741A1 (en) * | 2000-09-15 | 2002-03-21 | Alcatel | Voltage controlled oscillator with automatic center frequency calibration |
| CN1450717A (en) * | 2002-04-10 | 2003-10-22 | 络达科技股份有限公司 | Voltage control oscillator with low phase noise |
| CN1622448A (en) * | 2003-11-26 | 2005-06-01 | 阿尔卑斯电气株式会社 | Voltage controlled oscillator small in reduction of inductance and Q |
| CN1777021A (en) * | 2005-12-06 | 2006-05-24 | 东南大学 | Voltage controlled oscillator |
| CN101064501A (en) * | 2006-04-24 | 2007-10-31 | 中国科学院微电子研究所 | Self-adaptive circuit of on-chip integrated low-noise active filter |
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| US8159308B1 (en) * | 2009-04-20 | 2012-04-17 | Marvell International Ltd. | Low power voltage controlled oscillator (VCO) |
| CN102483984A (en) * | 2009-08-31 | 2012-05-30 | 高通股份有限公司 | Switchable inductor network |
| CN103518260A (en) * | 2011-03-21 | 2014-01-15 | 吉林克斯公司 | Symmmetrical center tap inductor structure |
| CN102306642A (en) * | 2011-09-22 | 2012-01-04 | 华东师范大学 | On-chip integrated inductor with adjustable inductance value |
| CN103166573A (en) * | 2011-12-14 | 2013-06-19 | 台湾积体电路制造股份有限公司 | Voltage-controlled oscillator |
| CN103501175A (en) * | 2013-10-24 | 2014-01-08 | 清华大学 | Millimeter-wave phase-locked loop |
| US20150200627A1 (en) * | 2014-01-10 | 2015-07-16 | International Business Machines Corporation | Phase noise reduction in voltage controlled oscillators |
| CN105185769A (en) * | 2014-03-11 | 2015-12-23 | 阿尔特拉公司 | Inductor structures with improved quality factor |
| CN106133632A (en) * | 2014-04-03 | 2016-11-16 | 高通股份有限公司 | Power-efficient, low noise and the actuator insensitive to technique/voltage/temperature (PVT) for voltage controlled oscillator (VCO) |
| CN107210707A (en) * | 2014-12-16 | 2017-09-26 | 赛灵思公司 | Voltage controlled oscillator including MuGFET |
| US9344036B1 (en) * | 2015-02-06 | 2016-05-17 | Qualcomm Incorporated | Voltage-controlled oscillator (VCO) with amplitude control |
| US20170179884A1 (en) * | 2015-12-16 | 2017-06-22 | International Business Machines Corporation | Vco selection and amplitude management using center tap inductor |
| CN105529993A (en) * | 2015-12-22 | 2016-04-27 | 江苏星宇芯联电子科技有限公司 | Self-voltage stabilizing LC voltage-controlled oscillator |
| CN107425812A (en) * | 2017-03-09 | 2017-12-01 | 中国科学院微电子研究所 | Millimeter wave voltage-controlled oscillator based on dual-mode inductor |
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| Publication number | Publication date |
|---|---|
| CN108231735B (en) | 2020-01-14 |
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