CN108231735B - Voltage controlled oscillator - Google Patents

Voltage controlled oscillator Download PDF

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Publication number
CN108231735B
CN108231735B CN201711393249.3A CN201711393249A CN108231735B CN 108231735 B CN108231735 B CN 108231735B CN 201711393249 A CN201711393249 A CN 201711393249A CN 108231735 B CN108231735 B CN 108231735B
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circuit
inductor
node
controlled oscillator
combination circuit
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CN108231735A (en
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冯春磊
吴悦
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Nanjing Sino Microelectronics Co Ltd
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Nanjing Sino Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/288—Shielding
    • H01F27/2885—Shielding with shields or electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
    • H01F27/36—Electric or magnetic shields or screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0073—Printed inductances with a special conductive pattern, e.g. flat spiral
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/008—Electric or magnetic shielding of printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

The present invention provides a voltage controlled oscillator, comprising: the inductor comprises a first connecting end, a second connecting end, an intermediate node, a first circuit connected between the first connecting end and the intermediate node, and a second circuit connected between the intermediate node and the second connecting end, wherein the first circuit and the second circuit extend to form one-turn or multi-turn coils, and a metal shielding layer positioned at the lower layer of the inductor; and the circuit structure is positioned below the metal shielding layer. Compared with the prior art, the voltage-controlled oscillator has the advantages that other main circuits of the voltage-controlled oscillator are placed below the inductor, so that the area of the whole voltage-controlled oscillator can be remarkably reduced, and meanwhile, the metal shielding layer is added between the inductor and the other main circuits to prevent the inductor and the other main circuits from interfering with each other.

Description

Voltage controlled oscillator
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of radio frequency, in particular to a voltage-controlled oscillator.
[ background of the invention ]
With the decreasing transistor size of semiconductor technology, the sizes of resistors and capacitors are also smaller and smaller. And the inductance cannot be reduced correspondingly with the process. Therefore, the area occupied by the inductor in the rf circuit is getting larger and larger, and especially the inductor of the voltage controlled oscillator occupies a large chip area, resulting in a large area of the whole voltage controlled oscillator.
In view of the above, the present invention provides an improved voltage controlled oscillator, which can occupy a smaller chip area.
[ summary of the invention ]
It is an object of the present invention to provide an improved voltage controlled oscillator which may occupy less chip area.
In order to solve the above problems, the present invention provides a voltage controlled oscillator, comprising: the inductor comprises a first connecting end, a second connecting end, an intermediate node, a first circuit connected between the first connecting end and the intermediate node, and a second circuit connected between the intermediate node and the second connecting end, wherein the first circuit and the second circuit extend to form one-turn or multi-turn coils, and a metal shielding layer positioned at the lower layer of the inductor; and the circuit structure is positioned below the metal shielding layer.
Further, the inductor is integrally formed in an axisymmetrical pattern along a symmetry axis passing through the center of the coil, the first connection terminal is located at one side of the symmetry axis, and the second connection terminal is located at the other side of the symmetry axis and is symmetric to the first connection terminal along the symmetry axis.
Furthermore, the circuit structures positioned below the metal shielding layer are symmetrically arranged along the symmetry axis.
Further, the voltage controlled oscillator further includes: the first dielectric layer is positioned between the inductor and the metal shielding layer; a second dielectric layer between the metal shield layer and the circuit structure.
Further, the circuit structure under the metal shielding layer includes: a differential pair transistor combination circuit; a varactor diode combination circuit; a capacitor array combination circuit; a common mode feedback circuit combining circuit; the middle node of the inductor is connected with one input end of an operational amplifier in the common mode feedback circuit combined circuit through a metal through hole; the first connecting end and the second connecting end of the inductor are respectively connected with a first node and a second node in the differential pair transistor combined circuit; two ends of the capacitor array combined circuit are respectively connected with a first node and a second node in the differential pair transistor combined circuit; two ends of the varactor combination circuit are respectively connected with a first node and a second node in the differential pair transistor combination circuit.
Furthermore, the differential pair transistor combination circuit, the varactor diode combination circuit, the capacitor array combination circuit and the common mode feedback circuit combination circuit are sequentially arranged from left to right, wherein the differential pair transistor combination circuit is close to the first connecting end and the second connecting end of the inductor, and the common mode feedback circuit combination circuit is close to the middle node of the inductor.
Compared with the prior art, the voltage-controlled oscillator has the advantages that other main circuits of the voltage-controlled oscillator are placed below the inductor, so that the area of the whole voltage-controlled oscillator can be remarkably reduced, and meanwhile, the metal shielding layer is added between the inductor and the other main circuits to prevent the inductor and the other main circuits from interfering with each other.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein:
fig. 1 is a schematic circuit diagram of a voltage-controlled oscillator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a top view of the physical structure of a voltage controlled oscillator according to the present invention;
fig. 3 is a schematic diagram of a top view of the physical structure of a voltage controlled oscillator in the present invention, wherein the inductor is not shown;
fig. 4 is a schematic cross-sectional view of a physical structure of a voltage-controlled oscillator according to the present invention.
[ detailed description ] embodiments
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Unless specifically stated otherwise, the terms coupled, connected, and connected as used herein mean electrically coupled, directly or indirectly.
The invention provides a voltage-controlled oscillator, which can remarkably reduce the area of the whole voltage-controlled oscillator by placing other main circuits of the voltage-controlled oscillator below an inductor, and simultaneously, a metal shielding layer is added between the inductor and other main circuits to prevent the mutual interference of the inductor and the other main circuits.
Fig. 1 is a schematic circuit diagram of a voltage-controlled oscillator according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a top view of the physical structure of a voltage controlled oscillator according to the present invention; FIG. 3 is a schematic diagram of a top view of the physical structure of a voltage controlled oscillator according to the present invention, wherein the inductor is illustrated; fig. 4 is a schematic cross-sectional view of a physical structure of a voltage-controlled oscillator according to the present invention.
As shown in fig. 1-4, the voltage controlled oscillator includes an inductor L1, a metal shielding layer 150 under the inductor L1, and a circuit structure under the metal shielding layer. The circuit structure under the metal shielding layer comprises: a differential pair transistor combination circuit 140, a varactor bank circuit (varactor bank) 130; a capacitor array bank (capacitance bank) 120; the common mode feedback circuit combines circuits 110.
On a chip, the inductor L1 generally needs to occupy a large area, and in order to reduce the area of the inductor L1, the structure of the inductor L1 needs to be closely arranged. As shown in fig. 2, the inductor L1 includes a first connection terminal RP, a second connection terminal RN, an intermediate node CT, a first line connected between the first connection terminal RP and the intermediate node CT, and a second line connected between the intermediate node CT and the second connection terminal RN, wherein the first line and the second line extend to form one or more turns of coil. The inductor L1 is integrally formed in an axisymmetrical pattern along a symmetry axis a1 passing through the center of the coil, the first connection RP is located at one side of the symmetry axis, and the second connection RN is located at the other side of the symmetry axis and is symmetric to the first connection RP along the symmetry axis. The portions where the first and second lines cross are located in different layers.
The common mode feedback circuit combination circuit 110 includes an operational amplifier OP1 and a PMOS transistor M5. The intermediate node CT of the inductor L1 is connected to an input terminal of an operational amplifier OP1 in the common mode feedback circuit assembly 110 through a metal via 151.
The differential pair transistor combination circuit 140 includes PMOS differential transistors M3, M4 and NMOS differential transistors M1, M2 formed with a first node a, a second node B and a third node C. The first connection end RP and the second connection end RN of the inductor L1 are respectively connected to the first node a and the second node B in the differential pair transistor combination circuit 140 through metal vias (not shown). The drain of the PMOS transistor M5 is connected to the third node.
The two ends of the capacitor array circuit 120 are connected to the first node a and the second node B of the differential pair transistor circuit 140, respectively. The two ends of the varactor combining circuit 130 are connected to the first node a and the second node B of the differential pair transistor combining circuit 140, respectively.
In this embodiment, the differential pair transistor combination circuit 140, the varactor combination circuit 130, the capacitor array combination circuit 120, and the common mode feedback circuit combination circuit 110 are sequentially arranged from left to right, wherein the differential pair transistor combination circuit 140 is close to the first connection end and the second connection end of the inductor L1, and the common mode feedback circuit combination circuit 110 is close to the middle node of the inductor L1, which may facilitate the routing design. Preferably, the circuit structure under the metal shielding layer is symmetrically arranged along the symmetry axis a1, so that the influence of the circuit structure on the inductance L1 can be significantly reduced.
As shown in fig. 4, the voltage-controlled oscillator further includes: a first dielectric layer 160 located between the inductor L1 and the metal shielding layer 150; a second dielectric layer 170 between the metal shield layer 150 and the circuit structure.
In the present invention, the terms "coupled," "connected," "connecting," and the like mean electrically connected, and if not specifically stated, directly or indirectly electrically coupled.
It should be noted that those skilled in the art can make modifications to the embodiments of the present invention without departing from the scope of the appended claims. Accordingly, the scope of the appended claims is not to be limited to the specific embodiments described above.

Claims (3)

1. A voltage controlled oscillator, comprising:
an inductor comprising a first connection end, a second connection end, an intermediate node, a first line connected between the first connection end and the intermediate node, a second line connected between the intermediate node and the second connection end, the first line and the second line extending to form one or more turns of a coil,
the metal shielding layer is positioned at the lower layer of the inductor;
a circuit structure located under the metal shielding layer,
the inductor is integrally formed into an axisymmetrical pattern along a symmetry axis passing through the center of the coil, the first connection terminal is located at one side of the symmetry axis, the second connection terminal is located at the other side of the symmetry axis and is symmetric to the first connection terminal along the symmetry axis,
the circuit structures positioned below the metal shielding layer are symmetrically arranged along the symmetry axis,
the circuit structure under the metal shielding layer comprises:
a differential pair transistor combination circuit;
a varactor diode combination circuit;
a capacitor array combination circuit;
a common mode feedback circuit combining circuit;
the middle node of the inductor is connected with one input end of an operational amplifier in the common mode feedback circuit combined circuit through a metal through hole;
the differential pair transistor combination circuit, the variable capacitance diode combination circuit, the capacitor array combination circuit and the common mode feedback circuit combination circuit are sequentially arranged from left to right, wherein the differential pair transistor combination circuit is close to the first connecting end and the second connecting end of the inductor,
the common mode feedback circuit combination circuit is close to the middle node of the inductor.
2. The voltage controlled oscillator of claim 1, further comprising:
the first dielectric layer is positioned between the inductor and the metal shielding layer;
a second dielectric layer between the metal shield layer and the circuit structure.
3. The voltage controlled oscillator of claim 2,
the first connecting end and the second connecting end of the inductor are respectively connected with a first node and a second node in the differential pair transistor combined circuit;
two ends of the capacitor array combined circuit are respectively connected with a first node and a second node in the differential pair transistor combined circuit;
two ends of the varactor combination circuit are respectively connected with a first node and a second node in the differential pair transistor combination circuit.
CN201711393249.3A 2017-12-21 2017-12-21 Voltage controlled oscillator Active CN108231735B (en)

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CN108231735B true CN108231735B (en) 2020-01-14

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Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6529720B1 (en) * 1998-12-29 2003-03-04 Koninklijke Philips Electronics N.V. Integrated circuit of inductive elements
DE60023895T2 (en) * 2000-09-15 2006-07-27 Alcatel Voltage controlled oscillator with automatic center frequency adjustment
US6781471B2 (en) * 2002-04-10 2004-08-24 Airoha Technology Corp. Low phase noise voltage controlled oscillator circuit
JP4451119B2 (en) * 2003-11-26 2010-04-14 アルプス電気株式会社 Voltage controlled oscillator
CN100511968C (en) * 2005-12-06 2009-07-08 东南大学 Voltage controlled oscillator
CN100555859C (en) * 2006-04-24 2009-10-28 中国科学院微电子研究所 A kind of adaptive circuit of going up integrated low-noise active filter
US7847650B2 (en) * 2006-12-15 2010-12-07 Pentomics, Inc Low phase-noise oscillator
CN101409530B (en) * 2007-10-12 2012-03-21 瑞昱半导体股份有限公司 Voltage-controlled oscillator
US8159308B1 (en) * 2009-04-20 2012-04-17 Marvell International Ltd. Low power voltage controlled oscillator (VCO)
US8842410B2 (en) * 2009-08-31 2014-09-23 Qualcomm Incorporated Switchable inductor network
EP2689456B1 (en) * 2011-03-21 2017-07-19 Xilinx, Inc. Symmetrical center tap inductor structure
CN102306642A (en) * 2011-09-22 2012-01-04 华东师范大学 On-chip integrated inductor with adjustable inductance value
US8665030B2 (en) * 2011-12-14 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Voltage-controlled oscillator
CN103501175B (en) * 2013-10-24 2016-02-10 清华大学 A kind of millimeter wave phase-locked loop
US9330214B2 (en) * 2014-01-10 2016-05-03 International Business Machines Corporation Phase noise reduction in voltage controlled oscillators
US20150263082A1 (en) * 2014-03-11 2015-09-17 AItera Corporation Inductor structures with improved quality factor
US9547324B2 (en) * 2014-04-03 2017-01-17 Qualcomm Incorporated Power-efficient, low-noise, and process/voltage/temperature (PVT)—insensitive regulator for a voltage-controlled oscillator (VCO)
US9325277B1 (en) * 2014-12-16 2016-04-26 Xilinx, Inc. Voltage controlled oscillator including MuGFETS
US9344036B1 (en) * 2015-02-06 2016-05-17 Qualcomm Incorporated Voltage-controlled oscillator (VCO) with amplitude control
US10116260B2 (en) * 2015-12-16 2018-10-30 International Business Machines Corporation VCO selection and amplitude management using center tap inductor
CN105529993B (en) * 2015-12-22 2018-10-12 江苏星宇芯联电子科技有限公司 One kind is from voltage stabilizing LC voltage controlled oscillators
CN107425812B (en) * 2017-03-09 2020-10-16 中国科学院微电子研究所 Millimeter wave voltage-controlled oscillator based on dual-mode inductor

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