CN108231133A - A kind of application method of Nand Flash bad blocks - Google Patents

A kind of application method of Nand Flash bad blocks Download PDF

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Publication number
CN108231133A
CN108231133A CN201711497652.0A CN201711497652A CN108231133A CN 108231133 A CN108231133 A CN 108231133A CN 201711497652 A CN201711497652 A CN 201711497652A CN 108231133 A CN108231133 A CN 108231133A
Authority
CN
China
Prior art keywords
bad block
bad
block
good
page
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711497652.0A
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Chinese (zh)
Inventor
李招远
郭芳芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Memory Storage Technology Co Ltd
Ramaxel Technology Shenzhen Co Ltd
Original Assignee
Dongguan Memory Storage Technology Co Ltd
Ramaxel Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Memory Storage Technology Co Ltd, Ramaxel Technology Shenzhen Co Ltd filed Critical Dongguan Memory Storage Technology Co Ltd
Priority to CN201711497652.0A priority Critical patent/CN108231133A/en
Publication of CN108231133A publication Critical patent/CN108231133A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/88Masking faults in memories by using spares or by reconfiguring with partially good memories

Abstract

The invention discloses a kind of application methods of Nand Flash bad blocks, it is characterized in that increase a bad block table, the block message of all newly generated bad blocks all increases in bad block table, increase the test operation to bad block table simultaneously, test each bad block table, the good page that can be worked normally is found out, and establishes the good page information table of a bad block, the good page worked normally found out from bad block is used to store read-only data.By establishing a kind of bad block Page management informations of chain type, the read-only data in system is placed in bad block, has not only taken full advantage of the useful space in bad block but also the space of the good blocks of Flash can be saved user data to be supplied to use.

Description

A kind of application method of Nand Flash bad blocks
Technical field
The present invention relates to solid state disk control technology, more particularly to a kind of application method of Nand Flash bad blocks.
Background technology
Nand Flash are due to the limitation of its realization principle, and all there may be bad blocks during production process and use. In existing storage device, general usage is all that bad block is directly abandoned, and with NAND FLASH techniques day increasingly It opens up, the bad block rate in NAND FLASH is also increasing.But the page that a bad block is not meant as entire block is unavailable , therefore there is greatly waste.
Invention content
For disadvantages described above, the present invention seeks to how effectively using bad block, improve the utilization of NandFlash on the whole Rate.
The present invention proposes a kind of application method of Nand Flash bad blocks in order to solve problem above, it is characterised in that increases Add a bad block table, the block message of all newly generated bad blocks all increases in bad block table, while increases the test to bad block table Operation, tests each bad block table, finds out the good page that can be worked normally, and establish the good page information table of a bad block, will be from bad The good page worked normally found out in block is used to store read-only data.
The application method of the Nand Flash bad blocks, it is characterised in that by creating the bad block storage of linked list bad block of dynamic Table when system detectio is to bad block, is tested each page of the bad block, when the good number of pages that can be worked normally in the bad block During according to less than 2, the bad block is directly abandoned, otherwise the information of the bad block is added in bad block chained list.
The application method of the Nand Flash bad blocks, it is characterised in that bad block table uses list structure, the root of chained list The address information of the first of first bad block for meeting condition the good page that node storage system detects;When system detectio go out it is new During bad block, before the address information write-in of the first good page of the good page table of previous bad block, the good page table of new bad block and new bad block First good block of the good page table of one bad block.
The application method of the Nand Flash bad blocks, it is characterised in that when system detectio is to bad block, to the bad block Each page tested, when the good page data that can be worked normally in the bad block be less than 2 when, directly abandon the bad block;Otherwise It regards as meeting condition.
The beneficial effects of the invention are as follows:By establishing a kind of bad block Page management informations of chain type, read-only in system Data are placed in bad block, have not only been taken full advantage of the useful space in bad block but also can have been saved the spaces of the good blocks of Flash to provide It is used to user data.
Description of the drawings
Fig. 1 is the good block chain structure schematic diagram of bad block;
Fig. 2 is the visioning procedure figure of bad good page information table in the block;
Fig. 3 is the establishment process of bad good page chain type management information table in the block.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts Embodiment shall fall within the protection scope of the present invention.
Fig. 1 is the good block chain structure schematic diagram of bad block;The good block message for the structure management bad block that system passes through chained list is The good page information for first bad block that system is found is stored on the root node of chained list, under each the good block message data of bad block include The good page information table of one defect block addresses, next bad block and the good page information table of current bad block, the good block message storage of each bad block On first good page of bad block, also just because of needing to take out a good page for having stored block message, therefore in bad block at least It is required that just there is the value utilized there are two good pages, therefore bad block of the good number of pages less than 2 is directly abandoned.
Fig. 2 is the visioning procedure figure of bad good page information table in the block;The good page table of bad block is obtained in the following way, works as inspection When measuring a bad block, all pages of current block page is initialized to, erasure error have been judged whether, if it is otherwise Current erroneous page from good page table is removed, if it is, wiping current k blocks, is read each in the good page table of each current block A good page if wherein non-complete 1 data are more than certain limit, removes the page from good page table, good to each current block The good page of each in page table carries out write operation, and the page is removed from good page table if error.Then it is current to read each Each good page in the good page table of block if wherein non-complete 1 data are more than certain limit, removes the page from good page table. After terminating to the judgement of good page, also need can to increase the operation of an erasing, operation below can be directly toward writing in good page Data.
Fig. 3 is the establishment process of bad good page chain type management information table in the block, and system detectio is to being that this is bad during a bad block Block creates page information table, while determines whether first bad block, if creating the good page information table of system first, and protects It deposits in systems;The good page information table just created is write together with the pointer and a upper good page information table for being directed toward this block if not In first good page for entering a upper bad block.
As soon as by operating the information table that can be established about page good in bad block above, as long as finding root node later All evil idea Good Page in the block can be found successively.If necessary to storage system read-only data when, just from this table In find unwritten Page, write inside be created that come workable bad block page table.
Above disclosed is only an embodiment of the present invention, cannot limit the interest field of sheet with this certainly, One of ordinary skill in the art will appreciate that realize all or part of flow of above-described embodiment, and according to the claims in the present invention institute The equivalent variations of work still fall within the range that the present invention is covered.

Claims (4)

1. a kind of application method of NandFlash bad blocks, it is characterised in that increase a bad block table, all newly generated bad blocks Block message all increases in bad block table, while increases the test operation to bad block table, tests each bad block table, finding out can be normal The good page of work, and the good page information table of a bad block is established, the good page worked normally found out from bad block is used for Store read-only data.
2. the application method of NandFlash bad blocks according to claim 1, it is characterised in that by creating the bad block chain of dynamic Table stores bad block table, and when system detectio is to bad block, each page of the bad block is tested, when can normal work in the bad block When the good page data made is less than 2, the bad block is directly abandoned, otherwise the information of the bad block is added in bad block chained list.
3. the application method of NandFlash bad blocks according to claim 1, it is characterised in that bad block table uses chained list knot Structure, the address information of the first of first bad block for meeting condition the good page that the root node storage system of chained list detects;When being When system detects new bad block, by the ground of the first good page of the good page table of previous bad block, the good page table of new bad block and new bad block First good block of the good page table of previous bad block is written in location information.
4. the application method of NandFlash bad blocks according to claim 3, it is characterised in that when system detectio to bad block When, each page of the bad block is tested, when the good page data that can be worked normally in the bad block is less than 2, is directly abandoned The bad block;Otherwise it regards as meeting condition.
CN201711497652.0A 2017-12-28 2017-12-28 A kind of application method of Nand Flash bad blocks Pending CN108231133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711497652.0A CN108231133A (en) 2017-12-28 2017-12-28 A kind of application method of Nand Flash bad blocks

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711497652.0A CN108231133A (en) 2017-12-28 2017-12-28 A kind of application method of Nand Flash bad blocks

Publications (1)

Publication Number Publication Date
CN108231133A true CN108231133A (en) 2018-06-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711497652.0A Pending CN108231133A (en) 2017-12-28 2017-12-28 A kind of application method of Nand Flash bad blocks

Country Status (1)

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CN (1) CN108231133A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788252B (en) * 2022-01-13 2022-12-21 大陸商合肥沛睿微電子股份有限公司 Bad block table inheritance method and storage device thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425041A (en) * 2007-10-30 2009-05-06 安凯(广州)软件技术有限公司 Optimizing method for establishing FAT file systems on NAND FLASH memory
CN106681936A (en) * 2016-12-29 2017-05-17 记忆科技(深圳)有限公司 Bad block management method for NANDFLASH

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425041A (en) * 2007-10-30 2009-05-06 安凯(广州)软件技术有限公司 Optimizing method for establishing FAT file systems on NAND FLASH memory
CN106681936A (en) * 2016-12-29 2017-05-17 记忆科技(深圳)有限公司 Bad block management method for NANDFLASH

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI788252B (en) * 2022-01-13 2022-12-21 大陸商合肥沛睿微電子股份有限公司 Bad block table inheritance method and storage device thereof

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Application publication date: 20180629

RJ01 Rejection of invention patent application after publication