CN108665941A - Row restorative procedure, device and NAND memory device based on nand flash memory - Google Patents
Row restorative procedure, device and NAND memory device based on nand flash memory Download PDFInfo
- Publication number
- CN108665941A CN108665941A CN201710212469.5A CN201710212469A CN108665941A CN 108665941 A CN108665941 A CN 108665941A CN 201710212469 A CN201710212469 A CN 201710212469A CN 108665941 A CN108665941 A CN 108665941A
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- Prior art keywords
- row
- bad
- redundant columns
- repaired
- bad row
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
- G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
Abstract
The embodiment of the invention discloses a kind of row restorative procedure, device and NAND memory device based on nand flash memory, this method are applied to NAND memory device, and this method includes：Detect the bad row in storage device；Judge whether bad arrange repaired；When judging not repair, then bad row are replaced with redundant columns；When judging to repair, then the redundant columns for repairing bad row are labeled as bad redundant columns, new redundant columns is used in combination to replace bad row.The embodiment of the present invention, which can solve the problems, such as to replace in the prior art, can not be normally carried out the operations such as read-write after row break down.
Description
Technical field
The present embodiments relate to memory technology more particularly to a kind of row restorative procedure, devices based on nand flash memory
And NAND memory device.
Background technology
Nand flash memory is one kind of Flash memories, belongs to nonvolatile semiconductor memory.NAND flash include very much
Data block, each data block is made of lots of memory unit, for reading and writing data.
The cabling that the direction (column) is arranged in NAND flash chips is the compactest, is disconnected and short circuit so there is cabling
Probability is very big, that is, bad row occurs.This requires additional row are added in the design to replace bad row, and the address of bad row is believed
In breath deposit array (array).During powering on reading, the address information of bad row is read into latch (latch) from array
In, when carrying out the operations such as read and write, the column address of input is compared with the address in all latch simultaneously, if
Match, then show current accessed is classified as bad row, then the redundant columns that will directly access replacement corresponding with the column address of input
The address (RDN column).Use row restorative procedure at present as shown in Figure 1, in figure column A and column B be it is bad, point
It is not replaced by column C and column D, when accessing column A, actual access is column C, and column B are same
Reason；But after column C and column D also break down, then column A and column B are by cisco unity malfunction.
Invention content
The embodiment of the present invention provides a kind of row restorative procedure, device and NAND memory device based on nand flash memory, with solution
The problem of certainly replacement row can not be normally carried out the operations such as read-write after breaking down in the prior art.
In a first aspect, an embodiment of the present invention provides a kind of row restorative procedure based on nand flash memory, is deposited applied to NAND
Equipment is stored up, the method includes：
Detect the bad row in the storage device；
Judge whether the bad row were repaired；
When judging not repair, then the bad row are replaced with redundant columns；
When judging to repair, then the redundant columns for repairing the bad row is labeled as bad redundant columns, new redundant columns are used in combination
Replace the bad row.
Further, the method further includes：By redundant columns with the bad address of row being replaced is correspondings be stored in described in deposit
In the latch for storing up equipment.
Further, described to judge whether the bad row were repaired and include：
The address for judging whether to record the bad redundant columns for arranging and replacing in the latch, when being judged as YES, then institute
Bad row are stated to be repaired.
Second aspect, an embodiment of the present invention provides a kind of row prosthetic device based on nand flash memory are deposited applied to NAND
Equipment is stored up, described device includes：
Bad row detection module, for detecting the bad row in the storage device；
Judgment module is repaired, for judging whether the bad row were repaired；
Repair module is judged that the bad row are out-of-date without repairing for working as the reparation judgment module, is replaced with redundant columns
Change the bad row, and when the reparations judgment module judges that the bad row are repaired out-of-date, will repair the bad redundancy arranged
Row are labeled as bad redundant columns, and new redundant columns is used in combination to replace the bad row.
Further, described device further includes：
Address memory module, for being stored in the storage device by redundant columns are with the bad address of row being replaced corresponding
In latch.
Further, the reparation judgment module is specifically used for：Judge whether to record in the latch the bad row and
The address of the redundant columns of replacement, when being judged as YES, then the bad row were repaired.
The third aspect, an embodiment of the present invention provides a kind of NAND memory device, the storage device includes firmware, described
Firmware includes the row prosthetic device based on nand flash memory as described above；
The storage device further includes latch, the address of the bad row for storing redundant columns and being replaced.
The embodiment of the present invention by detect in storage device it is bad arrange, judge whether bad arrange repaired, when judging do not have
It repaired, then replaces bad row with redundant columns, and when judging to repair, then the redundant columns for repairing bad row were labeled as bad redundant columns,
It is used in combination new redundant columns to replace bad row.Avoid due to replace row break down after can not be normally carried out read-write etc. operations the case where, energy
It is enough to ensure that the operations such as read-write are normally carried out.
Description of the drawings
Fig. 1 is the schematic diagram of the row restorative procedure of the prior art；
Fig. 2 is a kind of flow chart of the row restorative procedure based on nand flash memory in the embodiment of the present invention one；
Fig. 3 is a kind of structural schematic diagram of the row prosthetic device based on nand flash memory in the embodiment of the present invention two；
Fig. 4 is a kind of structural schematic diagram of NAND memory device in the embodiment of the present invention three.
Specific implementation mode
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Fig. 2 is a kind of flow chart for row restorative procedure based on nand flash memory that the embodiment of the present invention one provides, this implementation
Example is applicable to the case where row based on nand flash memory are repaired, and is applied to NAND memory device, and this method can be based on by having
The device of the row repair function of nand flash memory executes, which may be used software and/or the mode of hardware is realized, for example,
The firmware of storage device.
The method that the embodiment of the present invention one provides specifically includes：
Bad row in S110, detection storage device.
Specifically, NAND memories are one kind of flash memories, belong to non-volatile memory device.Storage device it is main
Function is storage program and various data, and can high speed, be automatically completed the accesses of program or data.NAND memory device includes
Multiple memory cells, read-write data manipulation is that corresponding memory cell is positioned according to physical address.
Wherein, the bad row refer to the row that can not be normally carried out read-write operation.For example, the evil idea is classified as chip manufacture
When bad row, the producing cause of the bad row can be due to bad row caused by manufacturing process, can also be due at basis
The bad row caused by.
Specifically, the mode of the bad row in detection storage device can be to carry out write operation and read operation to Leie time, sentence
Whether the result of disconnected read operation and write-in data are consistent, inconsistent, think that this is classified as bad row.
S120, judge whether bad arrange repaired, when being judged as YES, execute step S140, it is no to then follow the steps S130.
Wherein, if the bad row, which are repaired, refers to occurring bad row in storage device, bad row are replaced with into redundant columns, directly
Access the redundancy column address of replacement corresponding with the column address of input.It is directly according to data to be read for example, when reading data
Physical address read from the redundant columns of corresponding replacement.
Specifically, the repair process can be when testing chip.
Optionally, the method further includes：The storage is stored in by redundant columns are corresponding with the bad address of row being replaced
In the latch of equipment.Wherein, the redundancy is classified as the redundant columns for replacing the bad row in storage device.
Specifically, by the address pair of the address and the bad row being replaced of the redundant columns for replacing the bad row in storage device
It should be stored in the latch of storage device.So when being written and read operation, if it is described bad that address to be visited is corresponding
Row then correspond to according to the address described in latch and find the redundant columns for replacing evil idea row, are then written and read to the redundant columns
Operation.
Optionally, judging whether bad row were repaired includes：
The address for judging whether to record the bad redundant columns for arranging and replacing in the latch, when being judged as YES, then bad row quilt
It repaired.
Specifically, by the ground of the address and the bad row being replaced of the redundant columns for being useful for replacing the bad row in storage device
Location corresponds to and is stored in the latch of the storage device, the address for the bad row that current needs are judged whether to repair and latch
The bad column address stored in device is compared, if recording the address of the bad row in latch and for replacing the bad row
The address of redundant columns then illustrates that the bad row were repaired.
S130, when judging not repair, then replace bad row with redundant columns.
Specifically, by current needs judge whether the bad row repaired address and latch in the bad column address that stores into
Row compares, if not recording the address of the address of the bad row and the redundant columns for replacing the bad row in latch, says
The bright bad row were not repaired, then replaced bad row with redundant columns.Wherein, the redundant columns for replacing bad row be can be normal
It is written and read the good storage array of the operations such as wiping.
S140, when judging to repair, then the redundant columns that will repair bad row are labeled as bad redundant columns, and new redundant columns are used in combination
Replace bad row.
Wherein, the bad redundant columns refer to the redundant columns that can not be normally carried out read-write operation, and when the redundant columns are bad
After falling, it is badly to arrange that can be detected in S110 steps by the row nature that the redundant columns are replaced, therefore, in order to ensure row
Read-write operation is normally carried out, it is also necessary to be repaired again to evil idea row.
Specifically, if bad be classified as the bad row repaired, redundant columns when repairing bad row before illustrating for replacing bad row
For bad redundant columns.Wherein, if recording the ground of the address of the bad row and the redundant columns for replacing the bad row in latch
Location then illustrates that the bad row were repaired, then will be labeled as bad redundant columns for repairing the redundant columns of bad row, be used in combination new well superfluous
Remaining row replace bad row.Can be specifically to make a mark for the bad redundant columns in latch, and by the ground of new good redundant columns
Location is corresponding with the bad address of row is replaced to be stored in latch, or directly by the address of new redundant columns and is replaced bad row
Address covering store before evil idea row with replacement redundancy arrange address.Wherein, the new redundant columns preferably redundant columns,
That is the redundant columns that can be normally read and write.
Herein it should be noted that the number that row are repaired can be carried out according to actual conditions, for example, under normal conditions may be used
To be repaired twice.
The embodiment of the present invention by detect in storage device it is bad arrange, judge whether bad arrange repaired, when judging do not have
It repaired, then replaces bad row with redundant columns, and when judging to repair, then the redundant columns for repairing bad row were labeled as bad redundant columns,
It is used in combination new redundant columns to replace bad row.Avoid due to replace row break down after can not be normally carried out read-write etc. operations the case where, energy
It is enough to ensure that the operations such as read-write are normally carried out.
Embodiment two
Fig. 2 is a kind of structural schematic diagram of the row prosthetic device based on nand flash memory in the embodiment of the present invention two, is applied to
NAND memory device, correspondingly, the device specifically includes：Bad row detection module 210 repairs judgment module 220 and repair module
230。
Wherein, bad row detection module 210, for detecting the bad row in storage device；
Judgment module 220 is repaired, for judging whether bad arrange was repaired；
Repair module 230 is bad with redundant columns replacement for judging that bad row are out-of-date without repairing when reparation judgment module
Row, and judge that badly row are repaired out-of-date when repairing judgment module, the bad redundant columns arranged will be repaired labeled as bad redundant columns, be used in combination
New redundant columns replace bad row.
Optionally, device further includes：
Address memory module, for by the redundant columns latch for being stored in storage device corresponding with the bad address of row being replaced
In device.
Optionally, judgment module is repaired to be specifically used for：Judge the bad redundant columns for arranging and replacing whether are recorded in latch
It then goes bad row when being judged as YES and was repaired in address.
The executable any embodiment of the present invention of row prosthetic device provided in an embodiment of the present invention based on nand flash memory provides
The row restorative procedure based on nand flash memory, have the corresponding function module of execution method and advantageous effect.
Embodiment three
Fig. 3 is a kind of structural schematic diagram of NAND memory device in the embodiment of the present invention three, as shown, including firmware 31
With latch 32, firmware 31 is connect with latch.
Wherein, latch 32, the address of the bad row for storing redundant columns and being replaced.
Correspondingly, firmware 31 includes the row prosthetic device based on nand flash memory in above-described embodiment, specifically include：
Bad row detection module, for detecting the bad row in the storage device；
Judgment module is repaired, for judging whether the bad row were repaired；
Repair module is judged that the bad row are out-of-date without repairing for working as the reparation judgment module, is replaced with redundant columns
Change the bad row, and when the reparations judgment module judges that the bad row are repaired out-of-date, will repair the bad redundancy arranged
Row are labeled as bad redundant columns, and new redundant columns is used in combination to replace the bad row.
Further, described device further includes：
Address memory module, for being stored in the storage device by redundant columns are with the bad address of row being replaced corresponding
In latch.
Further, the reparation judgment module is specifically used for：Judge whether to record in the latch the bad row and
The address of the redundant columns of replacement, when being judged as YES, then the bad row were repaired.
What the executable any embodiment of the present invention of NAND memory device provided in an embodiment of the present invention provided is dodged based on NAND
The row restorative procedure deposited, by detect in storage device it is bad arrange, judge whether bad arrange repaired, when judging not repair
It crosses, then replaces bad row with redundant columns, when judging to repair, then the redundant columns for repairing bad row are labeled as bad redundant columns, be used in combination
New redundant columns replace bad row.Avoid due to replace row break down after can not be normally carried out read-write etc. operations the case where, Neng Goubao
The operations such as card read-write are normally carried out.
Note that above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiments here, can carry out for a person skilled in the art it is various it is apparent variation, again
Adjustment and replacement are without departing from protection scope of the present invention.Therefore, although by above example to the present invention carried out compared with
For detailed description, but the present invention is not limited only to above example, without departing from the inventive concept, can be with
Including other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (7)
1. a kind of row restorative procedure based on nand flash memory is applied to NAND memory device, which is characterized in that the method packet
It includes：
Detect the bad row in the storage device；
Judge whether the bad row were repaired；
When judging not repair, then the bad row are replaced with redundant columns；
When judging to repair, then the redundant columns for repairing the bad row is labeled as bad redundant columns, new redundant columns is used in combination to replace
The bad row.
2. according to the method described in claim 1, it is characterized in that, the method further includes：By redundant columns and it is replaced bad
The address of row corresponds to and is stored in the latch of the storage device.
3. according to the method described in claim 2, it is characterized in that, described judge whether the bad row were repaired and include：
Judge the address for going bad row and the redundant columns replaced whether is recorded in the latch, it is when being judged as YES, then described bad
Row were repaired.
4. a kind of row prosthetic device based on nand flash memory is applied to NAND memory device, which is characterized in that described device packet
It includes：
Bad row detection module, for detecting the bad row in the storage device；
Judgment module is repaired, for judging whether the bad row were repaired；
Repair module judges that the bad row are out-of-date without repairing for working as the reparation judgment module, institute is replaced with redundant columns
State bad row, and when the reparations judgment module judges that the bad row are repaired out-of-date, will repair the bad redundant columns mark arranged
Bad redundant columns are denoted as, new redundant columns is used in combination to replace the bad row.
5. device according to claim 4, which is characterized in that described device further includes：
Address memory module, for by the redundant columns latch for being stored in the storage device corresponding with the bad address of row being replaced
In device.
6. device according to claim 5, which is characterized in that the reparation judgment module is specifically used for：Judge the lock
The address that the bad redundant columns for arranging and replacing whether are recorded in storage, when being judged as YES, then the bad row were repaired.
7. a kind of NAND memory device, the storage device includes firmware, which is characterized in that the firmware includes such as claim
The row prosthetic device based on nand flash memory described in any one of 4-6；
The storage device further includes latch, the address of the bad row for storing redundant columns and being replaced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710212469.5A CN108665941A (en) | 2017-04-01 | 2017-04-01 | Row restorative procedure, device and NAND memory device based on nand flash memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710212469.5A CN108665941A (en) | 2017-04-01 | 2017-04-01 | Row restorative procedure, device and NAND memory device based on nand flash memory |
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| CN108665941A true CN108665941A (en) | 2018-10-16 |
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| CN201710212469.5A Pending CN108665941A (en) | 2017-04-01 | 2017-04-01 | Row restorative procedure, device and NAND memory device based on nand flash memory |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110546709A (en) * | 2019-07-12 | 2019-12-06 | 长江存储科技有限责任公司 | Memory device providing bad column repair and method of operating the same |
| CN112540720A (en) * | 2019-09-23 | 2021-03-23 | 深圳宏芯宇电子股份有限公司 | Flash memory device and flash memory control method |
| CN116612805A (en) * | 2023-07-19 | 2023-08-18 | 芯天下技术股份有限公司 | Redundancy replacement method and device for flash, register and memory chip |
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| CN106158041A (en) * | 2016-07-12 | 2016-11-23 | 北京兆易创新科技股份有限公司 | One arranges again restorative procedure and device |
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| US20090161429A1 (en) * | 2007-12-21 | 2009-06-25 | Atmel Corporation | Dynamic column redundancy replacement |
| CN102508724A (en) * | 2011-10-25 | 2012-06-20 | 北京同有飞骥科技股份有限公司 | Disk bad block processing method based on soft RAID (redundant array of independent disks) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110546709A (en) * | 2019-07-12 | 2019-12-06 | 长江存储科技有限责任公司 | Memory device providing bad column repair and method of operating the same |
| CN112540720A (en) * | 2019-09-23 | 2021-03-23 | 深圳宏芯宇电子股份有限公司 | Flash memory device and flash memory control method |
| CN112540720B (en) * | 2019-09-23 | 2023-11-10 | 深圳宏芯宇电子股份有限公司 | Flash memory device and flash memory control method |
| CN116612805A (en) * | 2023-07-19 | 2023-08-18 | 芯天下技术股份有限公司 | Redundancy replacement method and device for flash, register and memory chip |
| CN116612805B (en) * | 2023-07-19 | 2023-11-10 | 芯天下技术股份有限公司 | Redundancy replacement method and device for flash, register and memory chip |
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Application publication date: 20181016 |