CN108206674B - Doherty amplifier with defected ground structure - Google Patents

Doherty amplifier with defected ground structure Download PDF

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Publication number
CN108206674B
CN108206674B CN201611175442.5A CN201611175442A CN108206674B CN 108206674 B CN108206674 B CN 108206674B CN 201611175442 A CN201611175442 A CN 201611175442A CN 108206674 B CN108206674 B CN 108206674B
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amplifying circuit
ground structure
amplifier
signal
line
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CN108206674A (en
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宋亮
尹利娟
宋贺伦
张耀辉
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics

Abstract

The invention discloses a Doherty amplifier with a defected ground structure, which comprises a signal separator, a main amplifying circuit, at least one auxiliary amplifying circuit and a signal combiner, wherein the main amplifying circuit is connected with the signal separator; the signal separator separates the input signal and sends the separated input signal to the main amplifying circuit and the auxiliary amplifying circuit; the main amplifying circuit and the auxiliary amplifying circuit respectively amplify the signals separated by the signal separator and input the amplified signals to the signal combiner; the signal combiner combines the signals amplified by the main amplifying circuit and the auxiliary amplifying circuit and outputs the combined signals; the auxiliary amplifying circuit comprises a peak amplifier, and a first defected ground structure is arranged below the transmission line at the output end of the peak amplifier. According to the Doherty amplifier with the defect ground structure, the first defect ground structure is arranged below the transmission line at the output end of the peak amplifier, so that harmonic components of output signals of the auxiliary amplifying circuit are suppressed, the output power, the power additional efficiency and the linearity of the Doherty amplifier are improved, and meanwhile, the circuit size can be reduced and the manufacturing cost can be reduced by arranging the first defect ground structure.

Description

Doherty amplifier with defected ground structure
Technical Field
The invention relates to the field of radio frequency power amplifiers, in particular to a Doherty amplifier with a defected ground structure.
Background
The development of mobile communication technology is rapid, and especially with the popularization of third and fourth generation mobile communication circuits and the emergence of fifth generation mobile communication circuits, the requirements for power, bandwidth, data rate and linearity of wireless communication systems are higher and higher. In the field of mobile communication, a conventional method uses a Class AB Class power amplifier to obtain better linearity while ensuring output power and efficiency. In order to obtain a high data transmission rate in a limited bandwidth, a high peak-to-average ratio of signals is required, that is, the power amplifier needs to operate in a power back-off state, however, when a Class AB Class power amplifier operates in the power back-off state, the efficiency thereof is rapidly reduced, which means that a larger heat consumption is generated, the system heat dissipation cost is increased, and the requirements of miniaturization and light weight of a mobile communication system are contradicted.
In 1936, the Doherty power amplifier technology is proposed for the first time in the united states bell laboratory by w.h.doherty, and in recent years, scholars find that the Doherty amplifier is an effective method for improving the power amplification efficiency under the power backoff operation, and the circuit structure is relatively simple, so that the Doherty amplifier is widely applied to the field of modern mobile communication, particularly to a mobile communication base station.
The conventional Doherty amplifier consists of at least two power amplifiers, a main amplifier operating in a class B or AB state and an auxiliary amplifier operating in a class C state. Therefore, the auxiliary amplifier operates under a strong nonlinear bias condition, which increases the harmonic component of the output signal, generates more nonlinear component signals, is not favorable for the system to obtain higher linearity, and the harmonic impedance adversely affects the improvement of the output power and the power added efficiency of the Doherty amplifier.
Disclosure of Invention
In order to solve the above problems, the present invention provides a Doherty amplifier with a defected ground structure, which can improve the output power, power added efficiency and linearity of the Doherty amplifier, and at the same time, can reduce the circuit size and reduce the production cost.
The specific technical scheme provided by the invention is as follows: the Doherty amplifier with the defected ground structure comprises a signal separator, a main amplifying circuit, at least one auxiliary amplifying circuit and a signal combiner; the signal separator separates input signals and sends the separated input signals to the main amplifying circuit and the auxiliary amplifying circuit; the main amplifying circuit and the auxiliary amplifying circuit respectively amplify the signals separated by the signal separator and input the amplified signals to the signal combiner; the signal combiner combines the signals amplified by the main amplifying circuit and the auxiliary amplifying circuit and outputs the combined signals; the auxiliary amplifying circuit comprises a peak amplifier, and a first defected ground structure is arranged below an output end transmission line of the peak amplifier.
Furthermore, the auxiliary amplifying circuit further comprises a first impedance transformation line and a first input matching circuit which are sequentially connected to the transmission line at the input end of the peak amplifier, and a first output matching circuit and a first delay line which are sequentially connected to the transmission line at the output end of the peak amplifier, wherein the first impedance transformation line is connected with the signal separator, the first delay line is connected with the input end of the signal combiner, and the defected ground structure is arranged below the first delay line.
Further, the first impedance transformation line is a quarter-wavelength microstrip transmission line, and/or the impedance of the first impedance transformation line is 50 ohms.
Furthermore, the main amplifying circuit comprises a carrier amplifier, a second input matching circuit connected to the transmission line at the input end of the carrier amplifier, and a second output matching circuit, a second delay line and a second impedance transformation line which are sequentially connected to the transmission line at the output end of the carrier amplifier; the second impedance transformation line is connected with the input end of the signal combiner.
Further, a second defected ground structure is arranged below the second delay line, and/or a third defected ground structure is arranged below the second impedance transformation line.
Further, the second impedance transformation line is a quarter-wavelength microstrip transmission line, and/or the impedance of the second impedance transformation line is 50 ohms.
Further, a fourth defected ground structure is arranged below the signal combiner.
Further, the signal combiner is a quarter-wavelength microstrip transmission line, and/or an impedance of the signal combiner is 35.35 ohms.
Further, the signal separator is a power divider or a coupler.
Further, the first defected ground structure is disposed below a dc bias line of the peak amplifier.
According to the Doherty amplifier with the defect ground structure, the first defect ground structure is arranged below the transmission line at the output end of the peak amplifier, so that harmonic components of output signals of the auxiliary amplifying circuit are suppressed, the output power, the power additional efficiency and the linearity of the Doherty amplifier are improved, and meanwhile, the circuit size can be reduced and the manufacturing cost can be reduced by arranging the first defect ground structure.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a Doherty amplifier with a defected ground structure;
FIG. 2 is a structural diagram of a third defective structure;
fig. 3 is a top view of a third defective ground structure.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
Referring to fig. 1, the Doherty amplifier with a defective ground structure provided in this embodiment includes a signal splitter 1, a main amplifier circuit 2, a signal combiner 4, and an auxiliary amplifier circuit 3 connected in parallel with the main amplifier circuit 2 between input terminals 40 of the signal splitter 1 and the signal combiner 4, which are connected in sequence. The signal separator 1 receives an input signal of a signal source 5, separates the input signal and sends the separated input signal to the main amplification circuit 2 and the auxiliary amplification circuit 3, the main amplification circuit 2 and the auxiliary amplification circuit 3 amplify the signal separated by the signal separator 1 respectively and then input the amplified signal to the signal combiner 4, and the signal combiner 4 combines the amplified signals of the main amplification circuit 2 and the auxiliary amplification circuit 3 and then outputs the combined signal to the load 6. The auxiliary amplifying circuit 3 comprises a peak amplifier 31, and a first defected ground structure 7 is arranged below the transmission line at the output end of the peak amplifier 31.
The signal separator 1 is a power divider or a coupler, and is configured to perform proportional distribution on an input signal and send the signal to the main amplification circuit 2 and the auxiliary amplification circuit 3. The signal combiner 4 is a quarter-wavelength microstrip transmission line with a resistance of 35.35 ohms. Preferably, the fourth defected ground structure 10 is provided below the signal combiner 4, and the fourth defected ground structure 10 is provided below the signal combiner 4, so that on the one hand, harmonic components after signal combination can be suppressed, and on the other hand, the microstrip transmission line length of the signal combiner 4 can be shortened by virtue of the slow-wave characteristic of the fourth defected ground structure 10, thereby reducing the circuit size.
Specifically, the auxiliary amplifying circuit 3 further includes a first impedance transformation line 32 and a first input matching circuit 33 sequentially connected to the transmission line at the input end of the peak amplifier 31, and a first output matching circuit 34 and a first delay line 35 sequentially connected to the transmission line at the output end of the peak amplifier 31, the first impedance transformation line 32 is connected to the signal splitter 1, the first delay line 35 is connected to the input end 40 of the signal combiner 4, and the first defected ground structure 7 is disposed below the first delay line 35.
The first impedance transformation line 32 is a quarter-wavelength microstrip transmission line having an impedance of 50 ohms, and it functions as an impedance transformation mainly for compensating the phase difference of the main amplifier circuit 2, and of course, if the phase difference can be automatically introduced by the demultiplexer 1, the auxiliary amplifier circuit 3 does not need to provide the first impedance transformation line 32 for phase compensation.
The first input matching circuit 33 matches the output impedance of the demultiplexer 1 with the input impedance of the peak amplifier 31, and then sends the impedance-converted signal to the peak amplifier 31 for amplification. The first output matching circuit 34 matches the output impedance at the time of the back-off of the peak amplifier 31 with the input impedance of the signal combiner 4.
The first delay line 35 is responsible for fine tuning of the phase signal so that the phase of the output signal of the main amplifier circuit 2 is the same as the phase of the output signal of the auxiliary amplifier circuit 3. The first defected ground structure 7 is provided below the first delay line 35, and can suppress harmonic components of the output signal of the peak amplifier 31 operating in a Class C Class, improve the output power and power added efficiency of the peak amplifier 31, improve the linearity, and shorten the microstrip transmission line length of the first impedance conversion line 32 by virtue of the slow wave characteristic of the first defected ground structure 7, thereby reducing the circuit size.
Specifically, the main amplifier circuit 2 includes a carrier amplifier 21, a second input matching circuit 22 connected to the transmission line at the input end of the carrier amplifier 21, and a second output matching circuit 23, a second delay line 24 and a second impedance transformation line 25 sequentially connected to the transmission line at the output end of the carrier amplifier 21, and the second impedance transformation line 25 is connected to the input end 40 of the signal combiner 4.
The second input matching circuit 22 matches the output impedance of the demultiplexer 1 with the input impedance of the carrier amplifier 21, and then sends the signal demultiplexed by the demultiplexer 1 to the carrier amplifier 21 to be amplified. The second output matching circuit 23 matches the output impedance when the carrier amplifier 21 is backed off with the input impedance of the signal combiner 4.
The second delay line 24 is responsible for fine tuning of the phase signal so that the phase of the output signal of the main amplification circuit 2 is the same as the phase of the output signal of the auxiliary amplification circuit 3. The second impedance transformation line 25 is a quarter-wavelength microstrip transmission line with an impedance of 50 ohms, which performs an impedance transformation function, wherein the first impedance transformation line 32 is mainly used for compensating a phase difference introduced by the second impedance transformation line 25.
Preferably, the second defected ground structure 8 is provided below the second delay line 24, the third defected ground structure 9 is provided below the second impedance conversion line 25, harmonic components of the output signal of the carrier amplifier 21 can be suppressed by providing the second defected ground structure 8 and the third defected ground structure 9, the output power and the power added efficiency of the carrier amplifier 21 can be improved, the linearity can be improved, and the microstrip transmission line length of the second delay line 24 and the second impedance conversion line 25 can be shortened by the slow wave characteristics of the second defected ground structure 8 and the third defected ground structure 9, thereby reducing the circuit size.
In the present embodiment, the first defective structure 7, the second defective structure 8, the third defective structure 9, and the fourth defective structure 10 may have the same structure or different structures.
Referring to fig. 2 and 3, taking the third defected ground structure 9 below the second impedance transformation line 25 as an example, the third defected ground structure includes an underlying metal 91, a printed circuit board medium 92 and a defected ground 93, the printed circuit board medium 92 is disposed on the underlying metal 91, and the defected ground 93 is etched on the upper surface of the underlying metal 91 and is located below the second impedance transformation line 25. The number and the location of the defective ground 93 may be adjusted according to actual requirements, and in this embodiment, two defective grounds 93 are disposed below the second impedance transformation line 25, which is merely shown as an example and is not limited thereto.
Specifically, the defected ground 93 has a dumbbell structure including a connection portion 93a and two end portions 93b respectively located at two ends of the connection portion 93a, the connection portion 93a is perpendicular to the second impedance transformation line 25, and the two end portions 93b are symmetrically located at two sides of the second impedance transformation line 25. Wherein the two end portions 93b are rectangular. Of course, defected ground 93 may also be other common structures, such as a spiral structure.
In other embodiments, the Doherty amplifier with a defected ground structure may include n auxiliary amplifying circuits 3 connected in parallel, where n is an integer greater than 1, and the n auxiliary amplifying circuits 3 connected in parallel and the main amplifying circuit 2 form an n +1 stage Doherty amplifier with a defected ground structure, where circuit parameters of the n auxiliary amplifying circuits 3 connected in parallel may be the same, or different parameters may be selected according to actual design requirements.
Of course, in other embodiments, the first defected ground structure 7 and the second defected ground structure 8 may be disposed below the dc bias lines of the peak amplifier 31 and the carrier amplifier 21, so that the leakage of the output harmonics of the peak amplifier 31 and the carrier amplifier 21 to the dc bias terminal may be suppressed, and the length of the bias microstrip line may be shortened to reduce the size of the circuit board.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.

Claims (4)

1. A Doherty amplifier with a defected ground structure comprises a signal separator, a main amplifying circuit, at least one auxiliary amplifying circuit and a signal combiner; the signal separator separates input signals and sends the separated input signals to the main amplifying circuit and the auxiliary amplifying circuit; the main amplifying circuit and the auxiliary amplifying circuit respectively amplify the signals separated by the signal separator and input the amplified signals to the signal combiner; the signal combiner combines the signals amplified by the main amplifying circuit and the auxiliary amplifying circuit and outputs the combined signals; the auxiliary amplification circuit comprises a peak amplifier, a first defected ground structure is arranged below an output end transmission line of the peak amplifier, the auxiliary amplification circuit further comprises a first impedance transformation line and a first input matching circuit which are sequentially connected to the input end transmission line of the peak amplifier, a first output matching circuit and a first delay line which are sequentially connected to the output end transmission line of the peak amplifier, the first impedance transformation line is connected with the signal separator, the first delay line is connected with the input end of the signal combiner, the first defected ground structure is arranged below the first delay line, the first impedance transformation line is a quarter-wavelength microstrip transmission line, the impedance of the first impedance transformation line is 50 ohms, the main amplification circuit comprises a carrier amplifier, a second input matching circuit connected to the input end transmission line of the carrier amplifier and a second input matching circuit which is sequentially connected to the carrier amplifier The second output matching circuit, the second delay line and the second impedance transformation line are arranged on the transmission line of the output end of the device; the second impedance transformation line is connected with the input end of the signal combiner, and a second defected ground structure is arranged below the second delay line; a third defected ground structure is arranged below the second impedance transformation line; and a fourth defected ground structure is arranged below the signal combiner.
2. The Doherty amplifier of claim 1, wherein the second impedance transformation line is a quarter-wavelength microstrip transmission line; the impedance of the second impedance transformation line is 50 ohms.
3. The Doherty amplifier of claim 1 wherein the signal combiner is a quarter-wavelength microstrip transmission line and/or the impedance of the signal combiner is 35.35 ohms.
4. The Doherty amplifier of claim 1, wherein the signal splitter is a power divider or a coupler.
CN201611175442.5A 2016-12-19 2016-12-19 Doherty amplifier with defected ground structure Active CN108206674B (en)

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CN112803132B (en) * 2019-11-14 2023-04-25 中国科学院上海微系统与信息技术研究所 Transmission line structure
CN113203877B (en) * 2021-04-13 2023-11-28 深圳市时代速信科技有限公司 TRL calibration piece adopting defected ground structure

Citations (3)

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JP2009182635A (en) * 2008-01-30 2009-08-13 Toshiba Corp Doherty amplifier
CN104993796A (en) * 2015-06-25 2015-10-21 江苏大学 Doherty power amplifier

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US7847630B2 (en) * 2004-11-05 2010-12-07 Hitachi Kokusai Electric Inc. Amplifier
CN103560758B (en) * 2013-11-15 2016-09-07 上海无线电设备研究所 A kind of power amplifier for polar coordinate transmitter
CN105897179A (en) * 2016-05-10 2016-08-24 杭州电子科技大学 Compact wideband Doherty power amplifier and implementation method thereof

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Publication number Priority date Publication date Assignee Title
CN1943106A (en) * 2004-03-13 2007-04-04 菲尔特罗尼克公开有限公司 A doherty amplifier
JP2009182635A (en) * 2008-01-30 2009-08-13 Toshiba Corp Doherty amplifier
CN104993796A (en) * 2015-06-25 2015-10-21 江苏大学 Doherty power amplifier

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