CN108198919A - 一种复合量子阱外延片 - Google Patents

一种复合量子阱外延片 Download PDF

Info

Publication number
CN108198919A
CN108198919A CN201711430361.XA CN201711430361A CN108198919A CN 108198919 A CN108198919 A CN 108198919A CN 201711430361 A CN201711430361 A CN 201711430361A CN 108198919 A CN108198919 A CN 108198919A
Authority
CN
China
Prior art keywords
layers
quantum well
mqw active
epitaxial wafer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201711430361.XA
Other languages
English (en)
Other versions
CN108198919B (zh
Inventor
宁如光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanchang Kaijie Semiconductor Technology Co., Ltd
Original Assignee
Nanchang Kaixun Photoelectric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanchang Kaixun Photoelectric Co Ltd filed Critical Nanchang Kaixun Photoelectric Co Ltd
Priority to CN201711430361.XA priority Critical patent/CN108198919B/zh
Publication of CN108198919A publication Critical patent/CN108198919A/zh
Application granted granted Critical
Publication of CN108198919B publication Critical patent/CN108198919B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

本发明提供的一种复合量子阱外延片，包括GaAs衬底，在GaAs衬底上依次外延生长缓冲层、AlGaAs/AlAs(DBR)反射层、n‑AlInP限制层、n‑AlGaInP波导层、突变MQW有源层、渐变MQW有源层、p‑AlGaInP波导层、p‑AlInP限制层和p‑GaP电流扩展层；突变MQW有源层和渐变MQW有源层材料为AlGaInP。本发明公开的一种复合量子阱外延片，通过对突变量子阱和渐变量子阱的组合设计，限制电子在量子阱结构中的快速移动，增强空穴载流子的移动能力，从而提高电子与空穴载流子的复合几率，能提高LED芯片的内量子发光效率。

Description

一种复合量子阱外延片
技术领域
本发明属于半导体二极管技术领域，具体涉及一种复合量子阱外延片。
背景技术
现如今，高亮度AlGaInP基发光二极管的应用极为广泛，从传统的显示、指示、按键背光、灯饰等领域扩展到汽车尾灯、背光源等高端应用方面。对于In组分为0.5，(AlxGa1-x)0.5In0.5P材料的晶格常数可以与GaAs衬底完全匹配，通过对Al和Ga组分的调节，可以发出红、橙、黄、黄绿光(波长650-560nm)。因此提高发光效率，对于LED整个行业具有极大的经济效益，同时也促进了各相关行业的产业升级。
发明内容
本发明为提高LED芯片的内量子发光效率，提供一种复合量子阱外延片，通过对突变量子阱和渐变量子阱的组合设计，限制电子在量子阱结构中的快速移动，增强空穴载流子的移动能力，从而提高电子与空穴载流子的复合几率。
为了解决本发明的技术问题，本发明是通过以下技术方案实现的：一种复合量子阱外延片，包括GaAs衬底100，在所述GaAs衬底100上依次外延生长缓冲层101、AlGaAs/AlAs(DBR)反射层102、n-AlInP限制层103、n-AlGaInP波导层104、突变MQW有源层105、渐变MQW有源层106、p-AlGaInP波导层107、p-AlInP限制层108和p-GaP电流扩展层109；所述突变MQW有源层105和渐变MQW有源层106材料为AlGaInP；所述缓冲层101厚度为0.5μm，掺杂浓度为5×1017cm-3，所述AlGaAs/AlAs(DBR)反射层102厚度为1.6μm，掺杂浓度为2×1018。
优选地，所述n-AlInP限制层103厚度为0.5μm，掺杂浓度为2×1018。
优选地，所述n-AlGaInP波导层104厚度为0.1μm，掺杂浓度为3×1017cm-3。
优选地，所述突变MQW有源层105厚度为6nm。
优选地，所述渐变MQW有源层106厚度为4nm。
优选地，所述p-AlGaInP波导层107厚度0.1μm，掺杂浓度为5×1017cm-3。
优选地，所述p-AlInP限制层108厚度为0.8μm，掺杂浓度为6×1017。
优选地，所述p-GaP电流扩展层109厚度为5μm，掺杂浓度大于1×1018cm-3。
与现有技术相比，本发明获得的有益效果是：
本发明公开的一种复合量子阱外延片，通过对突变量子阱和渐变量子阱的组合设计，限制电子在量子阱结构中的快速移动，增强空穴载流子的移动能力，从而提高电子与空穴载流子的复合几率，能提高LED芯片的内量子发光效率。
附图说明
图1为本发明结构示意图。
图2为复合量子阱结构设计示意图。
附图标记：100、GaAs衬底；101、缓冲层；102、AlGaAs/AlAs(DBR)反射层；103、n-AlInP限制层；104、n-AlGaInP波导层；105、突变MQW有源层；106、渐变MQW有源层；107、p-AlGaInP波导层；108、p-AlInP限制层；109、p-GaP电流扩展层。
具体实施方式
下面结合附图，对实施例进行详细说明。
参见附图1，一种复合量子阱外延片，包括GaAs衬底100，在所述GaAs衬底100上依次外延生长缓冲层101、AlGaAs/AlAs(DBR)反射层102、n-AlInP限制层103、n-AlGaInP波导层104、突变MQW有源层105、渐变MQW有源层106、p-AlGaInP波导层107、p-AlInP限制层108和p-GaP电流扩展层109；所述突变MQW有源层105和渐变MQW有源层106材料为AlGaInP。
参见附图2，一种复合量子阱外延片，通过突变量子阱限制电子在量子阱结构中的移动速度，通过渐变量子阱增强空穴载流子的移动能力，如此即可提高电子与空穴载流子的复合几率，从而提高LED芯片的内量子发光效率。
进一步地，本发明采用的设备为MOCVD。
进一步地，本发明使用的MO源为TMGa、TMAl和TMIn。
进一步地，本发明使用的掺杂源为Cp2Mg和SiH4。
进一步地，本发明使用的特气为AsH3和PH3。
进一步地，在GaAs衬底100上以730℃温度生长n-GaAs缓冲层101，厚度为0.5μm，掺杂浓度为5×1017cm-3。
进一步地，在n-GaAs缓冲层101上以730℃生长AlGaAs/AlAs(DBR)反射层102，厚度为1.6μm，掺杂浓度为2×1018cm-3。
进一步地，在AlGaAs/AlAs(DBR)反射层102上以730℃生长n-AlInP限制层103，厚度为0.5μm，掺杂浓度为2×1018cm-3。
进一步地，在n-AlInP限制层103上以710℃生长n-AlGaInP波导层104，厚度为0.1μm，掺杂浓度为3×1017cm-3。
进一步地，在n-AlGaInP波导层104上以710℃生长突变MQW有源层105，厚度为6nm。
进一步地，在突变MQW有源层105上以710℃生长渐变MQW有源层106，厚度为4nm。
进一步地，在渐变MQW有源层106上以710℃生长p-AlGaInP波导层107，厚度为0.1μm，掺杂浓度为为5×1017cm-3。
进一步地，在p-AlGaInP波导层107上以730℃生长p-AlInP限制层108，厚度为0.8μm，掺杂浓度为为6×1017cm-3。
进一步地，在p-AlInP限制层108上以730℃生长p-GaP电流扩展层109，厚度为5μm，掺杂浓度为1×1018cm-3。
以上列举的仅是本发明的具体实施例之一。显然，本发明不限于以上实施例，还可以有许多类似的改形。本领域的普通技术人员能从本发明公开的内容直接导出或联想到的所有变形，均应认为是本发明所要保护的范围。

Claims (8)

1.一种复合量子阱外延片，其特征在于：包括GaAs衬底(100)，在所述GaAs衬底(100)上依次外延生长缓冲层(101)、AlGaAs/AlAs(DBR)反射层(102)、n-AlInP限制层(103)、n-AlGaInP波导层(104)、突变MQW有源层(105)、渐变MQW有源层(106)、p-AlGaInP波导层(107)、p-AlInP限制层(108)和p-GaP电流扩展层(109)，所述突变MQW有源层(105)和渐变MQW有源层(106)材料为AlGaInP；所述缓冲层(101)厚度为0.5μm，掺杂浓度为5×1017cm-3，所述AlGaAs/AlAs(DBR)反射层(102)厚度为1.6μm，掺杂浓度为2×1018。
2.如权利要求1所述的一种复合量子阱外延片，其特征在于：所述n-AlInP限制层(103)厚度为0.5μm，掺杂浓度为2×1018。
3.如权利要求1所述的一种复合量子阱外延片，其特征在于：所述n-AlGaInP波导层(104)厚度为0.1μm，掺杂浓度为3×1017cm-3。
4.如权利要求1所述的一种复合量子阱外延片，其特征在于：所述突变MQW有源层(105)厚度为6nm。
5.如权利要求1所述的一种复合量子阱外延片，其特征在于：所述渐变MQW有源层(106)厚度为4nm。
6.如权利要求1所述的一种复合量子阱外延片，其特征在于：所述p-AlGaInP波导层(107)厚度0.1μm，掺杂浓度为5×1017cm-3。
7.如权利要求1所述的一种复合量子阱外延片，其特征在于：所述p-AlInP限制层(108)厚度为0.8μm，掺杂浓度为6×1017。
8.如权利要求1所述的一种复合量子阱外延片，其特征在于：所述p-GaP电流扩展层(109)厚度为5μm，掺杂浓度大于1×1018cm-3。
CN201711430361.XA 2017-12-26 2017-12-26 一种复合量子阱外延片 Active CN108198919B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711430361.XA CN108198919B (zh) 2017-12-26 2017-12-26 一种复合量子阱外延片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711430361.XA CN108198919B (zh) 2017-12-26 2017-12-26 一种复合量子阱外延片

Publications (2)

Publication Number Publication Date
CN108198919A true CN108198919A (zh) 2018-06-22
CN108198919B CN108198919B (zh) 2020-07-28

Family

ID=62584152

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711430361.XA Active CN108198919B (zh) 2017-12-26 2017-12-26 一种复合量子阱外延片

Country Status (1)

Country Link
CN (1) CN108198919B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108767075A (zh) * 2018-06-26 2018-11-06 山东浪潮华光光电子股份有限公司 一种带优化反射层的黄绿光led外延结构及其制备方法
CN111478181A (zh) * 2019-01-23 2020-07-31 潍坊华光光电子有限公司 一种多波长激光器的制备方法
CN112909138A (zh) * 2021-01-04 2021-06-04 华灿光电(苏州）有限公司 AlGaInP发光二极管的外延片及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296561A (ja) * 2003-03-26 2004-10-21 Hitachi Ltd 光半導体装置及び光伝送モジュール
CN102157657A (zh) * 2011-01-26 2011-08-17 中山大学 一种GaN基发光二极管以及制作方法
CN103247728A (zh) * 2013-05-09 2013-08-14 青岛杰生电气有限公司 一种半导体紫外光源器件
CN104103724A (zh) * 2014-08-04 2014-10-15 湘能华磊光电股份有限公司 渐变量子阱的led外延片、生长方法及led结构
CN104681680A (zh) * 2013-12-02 2015-06-03 山东华光光电子有限公司 一种易于粗化的红光led芯片结构及制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004296561A (ja) * 2003-03-26 2004-10-21 Hitachi Ltd 光半導体装置及び光伝送モジュール
CN102157657A (zh) * 2011-01-26 2011-08-17 中山大学 一种GaN基发光二极管以及制作方法
CN103247728A (zh) * 2013-05-09 2013-08-14 青岛杰生电气有限公司 一种半导体紫外光源器件
CN104681680A (zh) * 2013-12-02 2015-06-03 山东华光光电子有限公司 一种易于粗化的红光led芯片结构及制备方法
CN104103724A (zh) * 2014-08-04 2014-10-15 湘能华磊光电股份有限公司 渐变量子阱的led外延片、生长方法及led结构

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
NIR TESSLER: ""On carrier injection and gain dynamics in quantum well lasers"", 《IEEE JOURNAL OF QUANTUM ELECTRONICS》 *
孙佩: ""GaN基蓝光LED外延结构的涉及"", 《CNKI中国优秀硕士学位论文全文数据库》 *
陈峻: ""渐变型量子阱垒层厚度对GaN基双波长发光二极管发光特性调控的研究"", 《物理学报》 *
陈贵楚，范广涵: ""渐变方式对量子阱激光器电流注入效率的影响"", 《华南师范大学学报》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108767075A (zh) * 2018-06-26 2018-11-06 山东浪潮华光光电子股份有限公司 一种带优化反射层的黄绿光led外延结构及其制备方法
CN108767075B (zh) * 2018-06-26 2019-09-06 山东浪潮华光光电子股份有限公司 一种带优化反射层的黄绿光led外延结构及其制备方法
CN111478181A (zh) * 2019-01-23 2020-07-31 潍坊华光光电子有限公司 一种多波长激光器的制备方法
CN112909138A (zh) * 2021-01-04 2021-06-04 华灿光电(苏州）有限公司 AlGaInP发光二极管的外延片及其制备方法
CN112909138B (zh) * 2021-01-04 2022-05-20 华灿光电(苏州）有限公司 AlGaInP发光二极管的外延片及其制备方法

Also Published As

Publication number Publication date
CN108198919B (zh) 2020-07-28

Similar Documents

Publication Publication Date Title
Jiang et al. Efficient InGaN-based yellow-light-emitting diodes
Sadaf et al. Alternating-current InGaN/GaN tunnel junction nanowire white-light emitting diodes
US9583671B2 (en) Quantum efficiency of multiple quantum wells
Ra et al. Core–shell tunnel junction nanowire white-light-emitting diode
CN103636008B (zh) 具有光耦合层的发光装置
Li et al. Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD
JP2002222989A (ja) 半導体発光素子
US20110210312A1 (en) Iii-nitride semiconductor light-emitting device and manufacturing method thereof
CN108198919A (zh) 一种复合量子阱外延片
Tanaka et al. Droop improvement in high current range on PSS-LEDs
JP5296280B2 (ja) ＧａＩｎＮからなる薄い半導体層およびその製造方法ならびにその半導体層を備えたＬＥＤさらにはこのＬＥＤを備えた照明デバイス
CN105895753A (zh) 提高led发光效率的外延生长方法
CN104993027A (zh) 发光二极管外延片及其制作方法
AU2021104970A4 (en) Ultraviolet light-emitting diode and preparation method and application thereof
US8735919B2 (en) Group III-nitride based semiconductor LED
CN104103724A (zh) 渐变量子阱的led外延片、生长方法及led结构
CN106299062A (zh) 电流扩展层的外延生长方法
Ji et al. Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes
Rahman Solid-state lighting with wide band gap semiconductors
Khan et al. Highly Transparent p‐AlGaN‐Based (326–341 nm)‐Band Ultraviolet‐A Light‐Emitting Diodes on AlN Templates: Recent Advances and Perspectives
TWI676263B (zh) 多波長發光二極體磊晶結構
US10211370B2 (en) Infrared LED
CN207624728U (zh) 一种外延片
CN105845788A (zh) 一种led电流扩展层外延生长方法
CN111326622A (zh) 一种基于空穴调整层的发光二极管

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20200824

Address after: Room 204, workshop 8, No. 199, huangtang West Street, Airport Economic Zone, Nanchang City, Jiangxi Province

Patentee after: Nanchang Kaijie Semiconductor Technology Co., Ltd

Address before: 330013 two floor, office building of small and medium sized enterprise park in Nanchang Airport Economic Zone, Jiangxi

Patentee before: NANCHANG KAIXUN PHOTOELECTRIC Co.,Ltd.

TR01 Transfer of patent right