CN108198910A - The electric leakage processing method of crystal-silicon solar cell - Google Patents
The electric leakage processing method of crystal-silicon solar cell Download PDFInfo
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- CN108198910A CN108198910A CN201810040765.6A CN201810040765A CN108198910A CN 108198910 A CN108198910 A CN 108198910A CN 201810040765 A CN201810040765 A CN 201810040765A CN 108198910 A CN108198910 A CN 108198910A
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- crystal
- solar cell
- silicon solar
- electric leakage
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- 238000003672 processing method Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 230000005611 electricity Effects 0.000 claims abstract description 5
- 239000000523 sample Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of electric leakage processing methods of crystal-silicon solar cell.The electric leakage processing method includes the following steps：The positive and negative electrode of crystal-silicon solar cell is connected on to the positive and negative anodes of power supply respectively, is powered；After energization, on the silicon chip front surface of the crystal silicon solar energy battery, acquisition is located at the physical features data at edge different location；According to the physical features data at the different location, the position where the PN junction in the crystal-silicon solar cell is determined；The PN junction is separated using laser.The electric leakage processing method of above-mentioned crystal-silicon solar cell, can not only avoid crystal-silicon solar cell from leaking electricity, additionally it is possible to maximally utilise limited light-emitting area, while can choose the problem of mistake causes yield rate low to avoid insulating regions.
Description
Technical field
The present invention relates to technical field of solar cells, more particularly to a kind of electric leakage processing side of crystal-silicon solar cell
Method.
Background technology
Crystal-silicon solar cell is a kind of semiconductor devices for converting light energy into electric energy.Under the irradiation of light, crystalline silicon
Photo-generated carrier is generated inside solar cell, these photo-generated carriers are under the action of PN junction built in field to the positive and negative anodes of battery
Migration, and drawn through electrode, it is converted into electric energy.
In solar cell preparation process, PN junction is typically to be prepared using the method for High temperature diffusion or ion implanting.This two
Kind method all can generate diffusion layer in the position by proximal edge, be connected so as to cause positive and negative anodes short circuit, form electric leakage.
Invention content
Based on this, it is necessary to for how to avoid the problem that crystal-silicon solar cell leaks electricity, provide a kind of crystalline silicon sun
The electric leakage processing method of battery.
A kind of electric leakage processing method of crystal-silicon solar cell, includes the following steps：
The positive and negative electrode of crystal-silicon solar cell is connected on to the positive and negative anodes of power supply respectively, is powered；
After energization, on the silicon chip front surface of the crystal silicon solar energy battery, acquisition is located at edge different location
Physical features data；
According to the physical features data at the different location, where determining the PN junction in the crystal-silicon solar cell
Position；
The PN junction is separated using laser.
The electric leakage processing method of above-mentioned crystal-silicon solar cell, by the way that the positive and negative electrode of crystal-silicon solar cell is connect respectively
In the positive and negative anodes of power supply, so that crystal-silicon solar cell is powered, the silicon chip of the crystal-silicon solar cell after acquisition energization
The physical features data of the different location at the edge of front surface, so as to determine crystalline substance according to the physical features data of the different location
The position where PN junction in body silicon solar cell recycles laser to separate PN junction, so as to remove electric leakage region, to the region
It insulate, this method determines the position where the PN junction in crystal-silicon solar cell by way of acquiring physical features data
It puts, additionally it is possible to greatly improve insulation yield rate.
The voltage of the power supply is 10V-15V in one of the embodiments,.
Light intensity of the physical features data for the edge of the crystal-silicon solar cell in one of the embodiments,
And/or temperature.
Light intensity is measured using photosensitive probe in one of the embodiments,；Temperature is measured using temp probe.
In one of the embodiments, determine the PN junction where position the step of include by the crystalline silicon sun electricity
The position coordinates of every bit on the edge of the front surface of the silicon chip in pond and the physical features data corresponding to it are fitted, and are obtained
Obtain matched curve；Obtain the corresponding position coordinates of wave crest in the matched curve, the seat of the position where as described PN junction
Mark.
The matched curve is sent to mark galvanometer in one of the embodiments, the mark galvanometer is according to
Matched curve carries out laser scanning, and the PN junction is separated, and groove is formed in the position where the PN junction.
The laser is infrared light that wavelength is 700nm-1064nm in one of the embodiments, or wavelength is
The green fluorescence of 488nm-532nm.
The pattern of the laser is pulse mode or quasi-continuous pattern in one of the embodiments,；Spot diameter is 1-
500μm。
The depth of the groove is 5 μm -50 μm in one of the embodiments,；The width of the groove is 10 μm of -200 μ
m。
The crystal-silicon solar cell is p-n-n types solar cell or the n-n-p type sun in one of the embodiments,
Battery.
Description of the drawings
Fig. 1 is the flow diagram of the electric leakage processing method of the crystal-silicon solar cell of an embodiment；
Fig. 2 is the structure diagram of the crystalline silicon Double side diffusion solar cell of an embodiment；
Fig. 3 is the structure diagram after PN junction shown in Fig. 2 partition.
Specific embodiment
It is understandable for the above objects, features and advantages of the present invention is enable to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
As shown in Figure 1, the electric leakage processing method of the crystal-silicon solar cell of an embodiment, includes the following steps：
S10：The positive and negative electrode of crystal-silicon solar cell is connected on to the positive and negative anodes of power supply respectively, is powered.
Specifically, the voltage of power supply is 10V-15V, the positive and negative electrode of crystal-silicon solar cell respectively with the high potential of power supply
End is connected with cold end, so that crystal-silicon solar cell is powered.That is, using the voltage of 10V-15V to crystal
Silicon solar cell is powered.Wherein, crystal-silicon solar cell can be p-n-n types crystal-silicon solar cell or n-n-p types
Crystal-silicon solar cell.Silicon chip can also be p-type or N-type used by crystal-silicon solar cell, at this to the crystalline silicon sun
The type of battery does not limit.Power-on voltage is 12V in one of the embodiments, so as to be carried for crystal-silicon solar cell
For stable voltage.In the present embodiment, crystal-silicon solar cell is crystal silicon double-side solar cell.
As shown in Fig. 2, crystal-silicon solar cell 100 include N-type silicon chip 110 and N-type silicon chip 110 back surface successively
The p+ emitter layers 120 of stacking, the first silicon nitride passivation 130 and silver-colored aluminum honeycomb 140 and the positive table in N-type silicon chip 110
N+ surface fields layer 150, the second silicon nitride passivation 160 and the silver positive electrode 170 that face stacks gradually.
S20：After energization, on the silicon chip front surface of crystal silicon solar energy battery, acquisition is located at edge different location
Physical features data.
Specifically, in one of the embodiments, physical features data for crystal-silicon solar cell edge light intensity or
Temperature.In other embodiments, physical features data may be light intensity and temperature.Further, it is measured using photosensitive probe
Light intensity measures temperature using temp probe.That is, using photosensitive probe along the side of the front surface of crystal-silicon solar cell
Edge one encloses, so as to capture the light intensity of each position at its edge, this is because preparation of the PN junction in crystal-silicon solar cell
Cheng Zhonghui is formed at the edge of crystal-silicon solar cell or by the position of proximal edge, and has the light intensity of PN junction where will
It is stronger, so as to the light at this want it is bright very much.It should be noted that physical features data may be intensity of reflected light etc..
If physical features data are temperature, using temperature probe along the edge one of the front surface of crystal-silicon solar cell
The temperature difference of each position at its edge is enclosed and captures, this is because the temperature of position existing for PN junction can be higher.Wherein, it surveys
Temperature probe can be thermocouple etc..
S30：According to the physical features data at different location, the position where the PN junction in crystal-silicon solar cell is determined
It puts.
Specifically, by the position of the every bit on the edge of the front surface of crystal-silicon solar cell collected in step S20
It puts coordinate and the physical features data corresponding to it is fitted, obtain matched curve.Wherein it is possible to using modes such as excel
It is fitted.That is, can be using coordinate position as abscissa, light intensity or the temperature difference are ordinate, corresponding so as to fit
Curve.After matched curve is obtained, the corresponding position coordinates of wave crest in matched curve, the as position where PN junction are obtained
Coordinate.It can be seen from the above, the light intensity maximum or maximum temperature of position existing for PN junction, so as to which light intensity is most strong in matched curve
Or the position of temperature difference maximum is exactly the position where PN junction 180, as shown in Figure 2.
S40：PN junction is separated using laser.
Specifically, the matched curve obtained in step S30 is sent to mark galvanometer in one of the embodiments, beaten
It marks galvanometer and laser scanning is carried out according to the matched curve, and PN junction is separated, form groove 181 in the position where PN junction, such as
Shown in Fig. 3.That is, matched curve is sent to mark galvanometer, mark galvanometer presets laser beam scan path, is swept in laser
During retouching, laser scanning is carried out to the position where PN junction, so as to separate PN junction, and then formed in the position where PN junction
Groove 181.So as to insulate to it, crystal-silicon solar cell is avoided to leak electricity.By the position where first determining PN junction, then use
Laser separates the position, so as to maximally utilise limited light-emitting area, while can be to avoid insulation layer
The problem of mistake causes yield rate low, is chosen in domain, simple for process, can extensive use.
Laser is infrared light that wavelength is 700nm-1064nm in one of the embodiments, or wavelength is 488nm-
The green fluorescence of 532nm.Zlasing mode is pulse mode or quasi-continuous pattern；Spot diameter is 1-500 μm.Spot diameter etc. can
To be selected according to the size of actually required groove to be formed.In the present embodiment, it is the infrared of 850nm that laser, which is wavelength,
Light, zlasing mode are pulse mode, and spot diameter is 10 μm.
The depth of groove 181 is 5 μm -50 μm in one of the embodiments,；The width of groove 181 is 10 μm -200 μm.
The electric leakage processing method of above-mentioned crystal-silicon solar cell, by the way that the positive and negative electrode of crystal-silicon solar cell is connect respectively
In the positive and negative anodes of power supply, so that crystal-silicon solar cell is powered, the silicon chip of the crystal-silicon solar cell after acquisition energization
The physical features data of the different location at the edge of front surface, so as to determine crystalline substance according to the physical features data of the different location
The position where PN junction in body silicon solar cell recycles laser to separate PN junction, so as to remove electric leakage region, to the region
It insulate, this method determines the position where the PN junction in crystal-silicon solar cell by way of acquiring physical features data
It puts, additionally it is possible to greatly improve insulation yield rate.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that those of ordinary skill in the art are come
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. the electric leakage processing method of a kind of crystal-silicon solar cell, which is characterized in that include the following steps：
The positive and negative electrode of crystal-silicon solar cell is connected on to the positive and negative anodes of power supply respectively, is powered；
After energization, on the silicon chip front surface of the crystal silicon solar energy battery, acquisition is located at the physics at edge different location
Characteristic；
According to the physical features data at the different location, the position where the PN junction in the crystal-silicon solar cell is determined
It puts；
The PN junction is separated using laser.
2. the electric leakage processing method of crystal-silicon solar cell according to claim 1, which is characterized in that the electricity of the power supply
It presses as 10V-15V.
3. the electric leakage processing method of crystal-silicon solar cell according to claim 1, which is characterized in that the physical features
Light intensity and/or temperature of the data for the edge of the crystal-silicon solar cell.
4. the electric leakage processing method of crystal-silicon solar cell according to claim 3, which is characterized in that using photosensitive probe
Measure light intensity；Temperature is measured using temp probe.
5. the electric leakage processing method of the crystal-silicon solar cell according to any one of claim 1-4, which is characterized in that really
The step of position where the fixed PN junction, includes：It will be every on the edge of the front surface of the silicon chip of the crystal-silicon solar cell
The position coordinates of any and the physical features data corresponding to it are fitted, and obtain matched curve；Obtain the matched curve
In the corresponding position coordinates of wave crest, the coordinate of the position where as described PN junction.
6. the electric leakage processing method of crystal-silicon solar cell according to claim 5, which is characterized in that the fitting is bent
Line is sent to mark galvanometer, and the mark galvanometer carries out laser scanning according to the matched curve, and the PN junction is separated,
Position where the PN junction forms groove.
7. the electric leakage processing method of crystal-silicon solar cell according to claim 6, which is characterized in that the laser is wave
The infrared light or wavelength of a length of 700nm-1064nm is the green fluorescence of 488nm-532nm.
8. the electric leakage processing method of crystal-silicon solar cell according to claim 7, which is characterized in that the mould of the laser
Formula is pulse mode or quasi-continuous pattern；Spot diameter is 1-500 μm.
9. the electric leakage processing method of crystal-silicon solar cell according to claim 6, which is characterized in that the depth of the groove
Spend is 5 μm -50 μm；The width of the groove is 10 μm -200 μm.
10. the electric leakage processing method of the crystal-silicon solar cell according to any one of claim 1-4, which is characterized in that
The crystal-silicon solar cell is p-n-n types solar cell or n-n-p type solar cells.
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| CN201810040765.6A CN108198910A (en) | 2018-01-16 | 2018-01-16 | The electric leakage processing method of crystal-silicon solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112103373A (en) * | 2020-11-12 | 2020-12-18 | 常州捷佳创精密机械有限公司 | Edge processing system and method for solar cell |
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2018
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| CN112103373A (en) * | 2020-11-12 | 2020-12-18 | 常州捷佳创精密机械有限公司 | Edge processing system and method for solar cell |
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