CN103280494A - Method for repairing crystalline silicon solar cell with leaky edges - Google Patents
Method for repairing crystalline silicon solar cell with leaky edges Download PDFInfo
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- CN103280494A CN103280494A CN2013102355259A CN201310235525A CN103280494A CN 103280494 A CN103280494 A CN 103280494A CN 2013102355259 A CN2013102355259 A CN 2013102355259A CN 201310235525 A CN201310235525 A CN 201310235525A CN 103280494 A CN103280494 A CN 103280494A
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- solar cell
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- current leakage
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for repairing a crystalline silicon solar cell with leaky edges. The method comprises the following steps: S1, the solar cell with leaky edges is connected to a direct-current power source, and the specific locations of the leaky edges of the solar cell are confirmed through a thermal imager; S2, leaky areas on the edges of the solar cell is polished with abrasive paper. The method for repairing the crystalline silicon solar cell with the leaky edges is simple and easy to use and strong in operability. Leakage occurs on the edges of the solar cell when the edges of the solar cell are not etched completely or are not etched at all, however, the leakage and conversion efficiency of the solar cell would reach the level of normal solar cells after the solar cell is polished with the abrasive paper, and the outer appearance of the solar cell meets the control standards of normal solar cells.
Description
Technical field
The invention belongs to the detection range of crystal silicon solar cell sheet, relate to a kind of restorative procedure of crystal silicon solar cell sheet edge current leakage.
Background technology
The making of crystal silicon solar cell sheet is divided into and is making herbs into wool, diffusion, etching, clean, plated film and silk screen printing six procedures, wherein the purpose of etching is the N-type zone of mixing phosphorus that stays around the silicon chip of P type raw material silicon chip diffusion back in order to remove, this N-type zone thoroughly can not make the conducting of battery sheet front and back as not removing or removing, cause battery sheet edge current leakage, reduce battery sheet quality, may be because of equipment fault in producing the line actual production process, personnel operation, reasons such as special wave is moving cause the etching technics operation exception, cause not etching only or not of edge etching, this type of silicon chip is through plated film, can produce a large amount of defective productss after the silk screen printing.
Therefore, need a kind of restorative procedure of crystal silicon solar cell sheet edge current leakage to address the above problem.
Summary of the invention
Goal of the invention: the objective of the invention is provides the restorative procedure of the higher crystal silicon solar cell sheet edge current leakage of a kind of precision at marking the defective that sheet can't be demarcated for four main grids in the prior art.
Technical scheme: for achieving the above object, the restorative procedure of crystal silicon solar cell sheet edge current leakage of the present invention can adopt following technical scheme:
A kind of restorative procedure of crystal silicon solar cell sheet edge current leakage may further comprise the steps:
1), the battery sheet of edge current leakage is connect DC power supply, utilize thermal imaging system to determine the particular location of described battery sheet edge current leakage;
2), utilize sand paper that the edge current leakage zone of described battery sheet is polished off.
Further, described battery sheet vertically is fixed on the support.
Beneficial effect: the restorative procedure of crystal silicon solar cell sheet edge current leakage of the present invention, be simple and easy to use, workable, because of the edge etching not only or not the edge current leakage battery sheet of etching after sand papering, leak electricity and conversion efficiency reaches the level of normal battery sheet, the outward appearance aspect also meets the control criterion of normal battery sheet.
Description of drawings
Fig. 1 connects the structural representation of DC power supply for crystal silicon solar cell sheet of the present invention;
Fig. 2 is the schematic diagram that utilizes sand paper that the edge current leakage zone of battery sheet is polished off;
Fig. 3 is the conversion efficiency comparison diagram;
Fig. 4 is the electric leakage comparison diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment only is used for explanation the present invention and is not used in and limits the scope of the invention, after having read the present invention, those skilled in the art all fall within the application's claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
See also illustrated in figures 1 and 2ly, the restorative procedure of crystal silicon solar cell sheet edge current leakage of the present invention may further comprise the steps:
1), the battery sheet 1 of edge current leakage is connect DC power supply, utilize thermal imaging system 2 to determine the particular location of described battery sheet 1 edge current leakages;
2), utilize sand paper 2 that the edge current leakage zone of described battery sheet 1 is polished off.
See also illustrated in figures 1 and 2, at first, with edge current leakage battery sheet vertical fixing on a support 11 and connect DC power supply, because battery sheet 1 electric leakage zone can generate heat after connecing DC power supply, so use thermal imaging system 2 can be easy to confirm the electric leakage particular location, manually polish and detection again with the edge of 3 pairs of battery sheet electric leakages of sand paper then, reach the normal value success of then polishing as battery sheet electric leakage and efficient, the battery sheet is output normally, do not reach normal value as electric leakage and efficient and then proceed to polish, till reaching normal value.
See also Fig. 3 and shown in Figure 4, because of the edge etching not only or not the edge current leakage battery sheet of etching after sand papering, leak electricity and conversion efficiency reaches the level of normal battery sheet, the outward appearance aspect also meets the control criterion of normal battery sheet.
The restorative procedure of crystal silicon solar cell sheet edge current leakage of the present invention, be simple and easy to use, workable, because of the edge etching not only or not the edge current leakage battery sheet of etching after sand papering, leak electricity and conversion efficiency reaches the level of normal battery sheet, the outward appearance aspect also meets the control criterion of normal battery sheet.
Claims (2)
1. the restorative procedure of a crystal silicon solar cell sheet edge current leakage is characterized in that, may further comprise the steps:
1), the battery sheet (1) of edge current leakage is connect DC power supply, utilize thermal imaging system (2) to determine the particular location of described battery sheet edge current leakage;
2), utilize sand paper (3) that the edge current leakage zone of described battery sheet (1) is polished off.
2. the restorative procedure of crystal silicon solar cell sheet edge current leakage as claimed in claim 1 is characterized in that, described battery sheet (1) vertically is fixed on the support (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102355259A CN103280494A (en) | 2013-06-14 | 2013-06-14 | Method for repairing crystalline silicon solar cell with leaky edges |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013102355259A CN103280494A (en) | 2013-06-14 | 2013-06-14 | Method for repairing crystalline silicon solar cell with leaky edges |
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| Publication Number | Publication Date |
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| CN103280494A true CN103280494A (en) | 2013-09-04 |
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| CN2013102355259A Pending CN103280494A (en) | 2013-06-14 | 2013-06-14 | Method for repairing crystalline silicon solar cell with leaky edges |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198910A (en) * | 2018-01-16 | 2018-06-22 | 上海大族新能源科技有限公司 | The electric leakage processing method of crystal-silicon solar cell |
| CN112687567A (en) * | 2020-12-25 | 2021-04-20 | 韩华新能源（启东）有限公司 | Manufacturing method of label for detecting focal length of thermal camera, label and detection method |
| CN112701186A (en) * | 2020-12-25 | 2021-04-23 | 韩华新能源（启东）有限公司 | Label manufacturing method for thermosensitive camera position detection, label and detection method |
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| WO2010001729A1 (en) * | 2008-06-30 | 2010-01-07 | シャープ株式会社 | Method for repairing photovoltaic power generating device, and photovoltaic power generating device |
| CN101789465A (en) * | 2010-01-08 | 2010-07-28 | 中山大学 | Defect remedying method of crystalline silicon solar cell |
| CN102185014A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Treatment method of leaked solar battery plates and tool clamp applying the method |
| CN102437240A (en) * | 2011-12-02 | 2012-05-02 | 百力达太阳能股份有限公司 | Method for etching edges of solar battery |
| CN202549902U (en) * | 2012-04-10 | 2012-11-21 | 百力达太阳能股份有限公司 | Compensation device for electricity leakage caused by non-etching after cell test |
-
2013
- 2013-06-14 CN CN2013102355259A patent/CN103280494A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010001729A1 (en) * | 2008-06-30 | 2010-01-07 | シャープ株式会社 | Method for repairing photovoltaic power generating device, and photovoltaic power generating device |
| CN101789465A (en) * | 2010-01-08 | 2010-07-28 | 中山大学 | Defect remedying method of crystalline silicon solar cell |
| CN102185014A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Treatment method of leaked solar battery plates and tool clamp applying the method |
| CN102437240A (en) * | 2011-12-02 | 2012-05-02 | 百力达太阳能股份有限公司 | Method for etching edges of solar battery |
| CN202549902U (en) * | 2012-04-10 | 2012-11-21 | 百力达太阳能股份有限公司 | Compensation device for electricity leakage caused by non-etching after cell test |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108198910A (en) * | 2018-01-16 | 2018-06-22 | 上海大族新能源科技有限公司 | The electric leakage processing method of crystal-silicon solar cell |
| CN112687567A (en) * | 2020-12-25 | 2021-04-20 | 韩华新能源（启东）有限公司 | Manufacturing method of label for detecting focal length of thermal camera, label and detection method |
| CN112701186A (en) * | 2020-12-25 | 2021-04-23 | 韩华新能源（启东）有限公司 | Label manufacturing method for thermosensitive camera position detection, label and detection method |
| CN112687567B (en) * | 2020-12-25 | 2023-10-27 | 韩华新能源（启东）有限公司 | Label manufacturing method, label and detection method for detecting focal length of thermal camera |
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Application publication date: 20130904 |