CN108196326A - A kind of broadband wave absorbing device based on black phosphorus and super surface - Google Patents

A kind of broadband wave absorbing device based on black phosphorus and super surface Download PDF

Info

Publication number
CN108196326A
CN108196326A CN201810262734.5A CN201810262734A CN108196326A CN 108196326 A CN108196326 A CN 108196326A CN 201810262734 A CN201810262734 A CN 201810262734A CN 108196326 A CN108196326 A CN 108196326A
Authority
CN
China
Prior art keywords
black phosphorus
band
phosphorus layer
wave absorbing
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810262734.5A
Other languages
Chinese (zh)
Other versions
CN108196326B (en
Inventor
唐斌
朱熠奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou University
Original Assignee
Changzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou University filed Critical Changzhou University
Priority to CN201810262734.5A priority Critical patent/CN108196326B/en
Publication of CN108196326A publication Critical patent/CN108196326A/en
Application granted granted Critical
Publication of CN108196326B publication Critical patent/CN108196326B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/003Light absorbing elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

The present invention relates to a kind of broadband wave absorbing devices based on black phosphorus and super surface, including metal base plate and the dielectric substrate for being located at metal base plate upper strata, there are at least three layers band-like black phosphorus layer away from distribution between the upper and lower above the dielectric liner plate, the band-like black phosphorus layer of bottom is located at dielectric liner plate upper surface, width becomes narrow gradually the band-like black phosphorus layer from bottom to up, and it is identical and be used for the dielectric plate for separating band-like black phosphorus layer that thickness is equipped between the band-like black phosphorus layer.The present invention utilizes the width for changing band-like black phosphorus layer, this feature of drifting about accordingly can also occur for the resonance peak position of wave absorbing device, by the band-like black phosphorus layer for setting different in width, solve the problems, such as that the existing perfect wave absorbing device bandwidth based on black phosphorus material is narrow, the bandwidth of operation of wave absorbing device has been widened, has realized the characteristic that wide band absorption and dynamic regulation and perfection in suction wave work inhale wave.

Description

A kind of broadband wave absorbing device based on black phosphorus and super surface
Technical field
The present invention relates to absorbing material technical field, the adjustable wave absorbing device in broadband of two-dimensional material is related generally to, especially one Middle ultra-wideband wave absorbing device of the kind based on multilayer black phosphorus and super surface, available for the modern photoelectron such as sensor, bioprobe Device.
Background technology
Black phosphorus is a kind of two-dimensional material being made of phosphorus atoms, and appearance and characteristic are all close with graphene, its atom is in The sheet of existing fold, shows great anisotropy in photon and electronics, and using black phosphorus to film thickness and Characteristic is adjusted in the sensibility of doping level.Therefore these characteristics cause black phosphorus to can be used for making various novel nano devices Part, such as optical modulator, polarizer, photon detector and absorption device, are a kind of New Two Dimensional materials for having very big potentiality.
Rubber-ferrite device refer to be absorbed incident electromagnetic wave and electromagnetic wave energy be converted into electric energy or The electromagnetic device of the other forms energy such as thermal energy, using very extensive.Since Landy et al. utilized metal-electricity in 2011 The periodic structure of dielectric-metal is built, and to top metal carry out structure design after, super surface absorber just due to Its ultra-thin thickness and good wave-sucking performance and get more and more people's extensive concerning.With the appearance of two-dimensional material, individual layer is utilized For black phosphorus in the metallic character of middle infrared band, wave absorbing device can change the humorous of black phosphorus wave absorbing device by changing the doping level of black phosphorus Vibration frequency, and then realize and inhale the adjustable characteristic of wave frequency rate.At present, although the absorber based on black phosphorus material has had well It is polarization correlated and with it is good can hamony, but its wave-sucking performance and bandwidth of operation are still unsatisfactory.For example, Northwestern Univ USA K.Aydin in 2016 et al. has delivered " Localized surface on Nano Letters periodicals Plasmons in monolayer black phosphorus " realize two dimension in paper for the first time using the band-like black phosphorus of individual layer Application of the material black phosphorus in wave absorbing device, however the wave absorbing efficiency of the wave absorbing device but can only achieve 50% or so.Then, 2017 Feng Xiong etc. have delivered " Strong anisotropic perfect on Journal of Optics periodicals absorption in monolayer black phosphorous and its application as tunable Polarizer " applies individual layer black phosphorus in paper so that wave absorbing device inhales wave rate at 22.8 μm and can reach 99.56%, but suction Wave device is only 22 μm to 25 μm in the wave-length coverage for inhaling more than 90% wave rate, and the narrow reality for limiting the wave absorbing device of bandwidth should With.
As application of the broadband wave absorbing device in modern communications is more and more extensive, this requires not only needed in design The device high to a wave absorbing efficiency, and taller bandwidth of operation, and prior art one side wave absorbing efficiency is general, it is another Aspect cannot obtain enough bandwidth of operation, while lack active tuning performance.
Invention content
The technical problem to be solved by the present invention is to:In order to overcome deficiency in the prior art, the present invention provides one kind and can carry High wave absorbing efficiency, have active tuning performance bandwidth tunable characteristic super surface broadband wave absorbing device.
The technical solution adopted by the present invention to solve the technical problems is:A kind of broadband based on multilayer black phosphorus and super surface Wave absorbing device including metal base plate and the dielectric substrate for being located at metal base plate upper strata, has extremely above the dielectric liner plate Few three layers the band-like black phosphorus layer away from distribution, the band-like black phosphorus layer of bottom are located at dielectric liner plate upper surface, the band between the upper and lower Width becomes narrow gradually shape black phosphorus layer from bottom to up, and it is identical and be used to separate band-like black that thickness is equipped between the band-like black phosphorus layer The dielectric plate of phosphorous layer.
Most preferably, there are five layers of band-like black phosphorus layer away from distribution between the upper and lower, five layers band-like above the dielectric liner plate Width is gradually narrowed corresponding to the resonance peak of different location black phosphorus layer from bottom to top, and thickness is equipped between neighbouring strip black phosphorus layer Identical dielectric plate.
The dielectric plate has identical dielectric constant with dielectric substrate.
The beneficial effects of the invention are as follows:The present invention utilizes the band-like black phosphorus layer of different in width, solves existing based on black The problem of perfect wave absorbing device bandwidth of phosphate material is narrow, has widened the bandwidth of operation of wave absorbing device, realizes the width inhaled in wave work With absorption and dynamic regulation and the perfect characteristic for inhaling wave.
Description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is the cross section structure schematic diagram of the present invention.
The wave-absorbing effect figure that Fig. 2 is calculated using time-domain finite difference.
Fig. 3 is the absorption distribution figure of wave absorbing device when black phosphorus doping concentration changes.
In figure:1. 2. dielectric liner plate of metal base plate, 3. band-like 4. dielectric plate of black phosphorus layer
Specific embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These attached drawings are simplified schematic diagram, only with Illustration illustrates the basic structure of the present invention, therefore it only shows composition related to the present invention.
A kind of broadband wave absorbing device based on multilayer black phosphorus and super surface as shown in Figure 1 including metal base plate 1 and is located at gold Belong to the dielectric substrate 2 on 1 upper strata of bottom plate, 2 top of dielectric liner plate has five layers of band-like black phosphorus away from distribution between the upper and lower Layer 3, the band-like black phosphorus layer 3 of bottom is located at 2 upper surface of dielectric liner plate, and width is gradual from bottom to up for the band-like black phosphorus layer 3 Narrow corresponding to the resonance peak of different location, it is identical and be used to separate that thickness is equipped between neighbouring band-like black phosphorus layer 3 The dielectric plate 4 of band-like black phosphorus layer 3, the dielectric plate 4 have identical dielectric constant with dielectric substrate 2.
Specific in the present embodiment, the 1 length and width p of metal base plate and cycle phase are same, p=200nm, thickness s= 300nm;2 thickness hs of dielectric substrate=2500nm, separate band-like 3 material of black phosphorus layer used in 4 thickness d of dielectric plate be 150nm, and the Refractive Index of Material n=1.7 of dielectric substrate 2 and dielectric plate 4, the width of five layers of band-like black phosphorus layer 3 from up to It is respectively w down1=133nm, w2=146nm, w3=159nm, w4=172nm, w5=185nm.
The operation principle of the wave absorbing device is as described in the following contents:The absorptivity calculation formula of wave absorbing device is typically expressed as:A= 1-R-T, here since 1 thickness of the metal base plate of use is sufficiently thick so that transmissivity T=0 in calculating, therefore suction wave formula can table It is shown as A=1-R.In middle infrared band, when plane wave impinges perpendicularly on band-like 3 surface of black phosphorus layer, the table of black phosphorus can be excited Surface plasma excimer (SPPs) generates surface plasma resonance effect.At this point, when plane wave incidence is to band-like black phosphorus layer 3 The local field strength Energy distribution of excitation results in RESONANCE ABSORPTION enhancing in the both sides of band-like black phosphorus layer 3.When the band-like black phosphorus layer of change During 3 width, the resonance peak position of wave absorbing device can also occur to drift about accordingly, using this thinking, by five different in width Band-like black phosphorus layer 3 carries out stacked in multi-layers, you can different resonance peak resonance superpositions is realized, so as to fulfill broadband wave-absorbing property;Meanwhile Change the doping concentration of band-like black phosphorus layer 3, thus it is possible to vary black phosphorus broadband Xi Bo positions.
In this example, the wave-absorbing effect being calculated using time-domain finite difference is as shown in Fig. 2, band-like based on multilayer The super surface wave absorbing device of black phosphorus layer 3, when electron adulterated a concentration of the 3 × 10 of black phosphorus13cm-2When, wavelength is in 15 μm~30 mu m wavebands In the range of, for absorptivity more than 90%, bandwidth is 15 μm.To further illustrate the electron adulterated concentration of black phosphorus to absorption spectra It influences, Fig. 3 is given in different levels of doping, and black phosphorus is to the absorption distribution situation of plane wave.When the doping of black phosphorus A concentration of 4 × 1013cm-2When, in the range of 13 μm~27 mu m wavebands, wave rate is inhaled more than 90%, and bandwidth is 14 μm;When black Phosphorus electron adulterated a concentration of 5 × 1013cm-2When, in the range of 13 μm~23 mu m wavebands, wave rate is inhaled more than 90%, bandwidth is 10μm;When the electron adulterated concentration of black phosphorus increases to 6 × 1013cm-2When, larger reduction occurs for wave absorbing efficiency and bandwidth.By This is not difficult to find out that, with the increase of doping concentration, the suction wave position of wave absorbing device is gradually to low band into line displacement, and it is wide to inhale wave Degree becomes narrow gradually.Therefore, by changing the doping concentration of band-like black phosphorus layer 3, which can carry out inhaling the adjusting in wave broadband, this Also the application range of the wave absorbing device is extended.
In conclusion the super surface broadband wave absorbing device based on two-dimensional material black phosphorus is, it can be achieved that broadband wave-absorbing effect, and can Wavestrip is wide is tuned to inhaling, and realizes the adjustable absorbing property in broadband, wave absorbing device of the present invention is simple in structure, can be applied to new Type opto-electronic device.
Using above-mentioned desirable embodiment according to the present invention as enlightenment, by above-mentioned description, relevant staff is complete Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention Property range is not limited to the content on specification, it is necessary to determine its technical scope according to right.

Claims (3)

1. a kind of broadband wave absorbing device based on black phosphorus and super surface, including metal base plate and the dielectric for being located at metal base plate upper strata Substrate, it is characterized in that:There are at least three layers band-like black phosphorus layer away from distribution between the upper and lower above the dielectric liner plate, bottom Band-like black phosphorus layer is located at dielectric liner plate upper surface, and width becomes narrow gradually the band-like black phosphorus layer from bottom to up, the band It is identical and be used for the dielectric plate for separating band-like black phosphorus layer that thickness is equipped between shape black phosphorus layer.
2. the broadband wave absorbing device based on black phosphorus and super surface as described in claim 1, it is characterized in that:The dielectric liner plate Top has five layers of band-like black phosphorus layer away from distribution between the upper and lower, and width is gradually narrowed and corresponded to five layers of band-like black phosphorus layer from bottom to top The identical dielectric plate of thickness is equipped between the resonance peak of different location, neighbouring strip black phosphorus layer.
3. the broadband wave absorbing device based on black phosphorus and super surface as claimed in claim 2, it is characterized in that:The dielectric plate with Dielectric substrate has identical dielectric constant.
CN201810262734.5A 2018-03-28 2018-03-28 Broadband wave absorber based on black phosphorus and super surface Active CN108196326B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810262734.5A CN108196326B (en) 2018-03-28 2018-03-28 Broadband wave absorber based on black phosphorus and super surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810262734.5A CN108196326B (en) 2018-03-28 2018-03-28 Broadband wave absorber based on black phosphorus and super surface

Publications (2)

Publication Number Publication Date
CN108196326A true CN108196326A (en) 2018-06-22
CN108196326B CN108196326B (en) 2021-05-25

Family

ID=62596226

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810262734.5A Active CN108196326B (en) 2018-03-28 2018-03-28 Broadband wave absorber based on black phosphorus and super surface

Country Status (1)

Country Link
CN (1) CN108196326B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110471137A (en) * 2019-09-17 2019-11-19 厦门理工学院 A kind of two-band infrared wave-absorbing device
CN113363709A (en) * 2021-04-19 2021-09-07 中山大学 In-plane anisotropic polariton device based on metal micro-nano antenna and preparation method and excitation method thereof
CN113868965A (en) * 2021-12-01 2021-12-31 北京芯可鉴科技有限公司 Design method and system of black phosphorus wave absorber

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107221752A (en) * 2017-05-05 2017-09-29 北京理工大学 A kind of insensitive Meta Materials wave absorbing device of wide bandwidth angle polarization
CN207098023U (en) * 2017-08-10 2018-03-13 杭州电子科技大学 Band inhales molded breadth band frequency selecting structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107221752A (en) * 2017-05-05 2017-09-29 北京理工大学 A kind of insensitive Meta Materials wave absorbing device of wide bandwidth angle polarization
CN207098023U (en) * 2017-08-10 2018-03-13 杭州电子科技大学 Band inhales molded breadth band frequency selecting structures

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FENG XIONG ET.AL: ""Strong anisotropic perfect absorption in monolayer black phosphorous and its application as tunable polarizer"", 《JOURNAL OF OPTICS》 *
ZIZHUO LIU ET. AL: ""Localized surface plasmons in Nanostructured Monolayer Black Phosphorus"", 《NANO LETTERS》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110471137A (en) * 2019-09-17 2019-11-19 厦门理工学院 A kind of two-band infrared wave-absorbing device
CN110471137B (en) * 2019-09-17 2024-02-13 厦门理工学院 Dual-band infrared absorber
CN113363709A (en) * 2021-04-19 2021-09-07 中山大学 In-plane anisotropic polariton device based on metal micro-nano antenna and preparation method and excitation method thereof
CN113868965A (en) * 2021-12-01 2021-12-31 北京芯可鉴科技有限公司 Design method and system of black phosphorus wave absorber
CN113868965B (en) * 2021-12-01 2022-02-22 北京芯可鉴科技有限公司 Design method and system of black phosphorus wave absorber

Also Published As

Publication number Publication date
CN108196326B (en) 2021-05-25

Similar Documents

Publication Publication Date Title
CN108196326A (en) A kind of broadband wave absorbing device based on black phosphorus and super surface
Kowerdziej et al. Terahertz characterization of tunable metamaterial based on electrically controlled nematic liquid crystal
Seredin et al. Ultrathin nano-sized Al2O3 strips on the surface of por-Si
CN107942418A (en) It is a kind of based on the Terahertz dual-band absorber of cross grapheme material and its application
Kowerdziej et al. Experimental study on terahertz metamaterial embedded in nematic liquid crystal
CN107978871A (en) Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device
Mu et al. Microwave absorption properties of heterostructure composites of two dimensional layered magnetic materials and graphene nanosheets
CN110596790B (en) Metamaterial and method for realizing electromagnetic-like induced transparent effect
JP2020523621A (en) Epsilon near-zero absorber with adjustable field effect
Wang et al. Optical and electro-optic anisotropy of epitaxial Ba0. 7Sr0. 3TiO3 thin films
Habenicht et al. Investigation of the dispersion and the effective masses of excitons in bulk 2 H− MoS 2 using transition electron energy-loss spectroscopy
CN207021384U (en) A kind of broadband circle polarized converter of the frequency-tunable based on graphene
CN207834582U (en) A kind of polarization based on graphene multi-resonant does not depend on broadband Terahertz wave absorbing device
CN107367488A (en) A kind of adjustable surface plasma resonance sensor substrate of formant
CN106887665A (en) A kind of all dielectric Meta Materials class EIT resonance devices
CN104536068A (en) Near-infrared frequency adjustable absorber
Guo et al. Broadband absorption enhancement of graphene in the ultraviolet range based on metal-dielectric-metal configuration
Yang et al. Visible-infrared (0.4–20 μm) ultra-broadband absorber based on cascade film stacks
CN104244689B (en) A kind of adjustable microwave absorbing material of absorption frequency and preparation method thereof
Losurdo et al. Dielectric function of V 2 O 5 nanocrystalline films by spectroscopic ellipsometry: Characterization of microstructure
Zhang et al. Ferroelectric BaxSr1− xTiO3 thin-film varactors with parallel plate and interdigital electrodes for microwave applications
Denny et al. Effects of cation compositions on the electronic properties and optical dispersion of indium zinc tin oxide thin films by electron spectroscopy
Strocov et al. Absolute determination of the layer-perpendicular band structure of and by combined very-low-energy electron diffraction and photoemission
Pavunny et al. Optical properties of amorphous high-k LaGdO3 films and its band alignment with Si
Kang et al. Optical and thermal properties of V 2 O 5 thin films with crystallization

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant