CN108196326B - Broadband wave absorber based on black phosphorus and super surface - Google Patents
Broadband wave absorber based on black phosphorus and super surface Download PDFInfo
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- CN108196326B CN108196326B CN201810262734.5A CN201810262734A CN108196326B CN 108196326 B CN108196326 B CN 108196326B CN 201810262734 A CN201810262734 A CN 201810262734A CN 108196326 B CN108196326 B CN 108196326B
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Abstract
The invention relates to a broadband wave absorber based on black phosphorus and a super surface, which comprises a metal bottom plate and a dielectric substrate arranged on the upper layer of the metal bottom plate, wherein at least three belt-shaped black phosphorus layers are arranged above a dielectric lining plate and are distributed at intervals up and down, the belt-shaped black phosphorus layer at the bottom layer is arranged on the upper surface of the dielectric lining plate, the width of the belt-shaped black phosphorus layers is gradually narrowed from bottom to top, and dielectric plates which are the same in thickness and are used for separating the belt-shaped black phosphorus layers are arranged between the belt-shaped black phosphorus layers. According to the invention, by utilizing the characteristic that the width of the strip-shaped black phosphorus layer is changed and the resonance peak position of the wave absorber can also shift correspondingly, the problem that the bandwidth of the existing perfect wave absorber based on the black phosphorus material is too narrow is solved by arranging the strip-shaped black phosphorus layers with different widths, the working bandwidth of the wave absorber is widened, and the characteristics of broadband absorption, dynamic adjustment and perfect wave absorption in wave absorbing work are realized.
Description
Technical Field
The invention relates to the technical field of wave-absorbing materials, mainly relates to a broadband adjustable wave absorber made of a two-dimensional material, in particular to a mid-infrared broadband wave absorber based on multiple layers of black phosphorus and super surfaces, and can be used for modern optoelectronic devices such as sensors, biological detectors and the like.
Background
The black phosphorus is a two-dimensional material composed of phosphorus atoms, the appearance and the characteristics of the black phosphorus are similar to those of graphene, the atoms of the black phosphorus are in a folded sheet shape, the black phosphorus shows quite strong anisotropy in photons and electrons, and the characteristics can be adjusted by utilizing the sensitivity of the black phosphorus to the thickness and the doping degree of a film. Therefore, the characteristics enable the black phosphorus to be used for manufacturing various novel nanometer devices, such as optical modulators, polarizers, photon detectors, absorption devices and the like, and the black phosphorus is a novel two-dimensional material with great potential.
The electromagnetic wave absorber is an electromagnetic device that absorbs incident electromagnetic waves and converts electromagnetic wave energy into electric energy or other forms of energy such as heat energy, and is widely used. Since Landy et al constructed 2011 with a metal-dielectric-metal periodic structure and structurally designed the top metal, the super surface absorber has received much attention due to its ultra-thin thickness and good wave-absorbing ability. With the appearance of a two-dimensional material, by utilizing the metal characteristic of single-layer black phosphorus in a middle infrared band, the wave absorber can change the resonance frequency of the black phosphorus wave absorber by changing the doping degree of the black phosphorus, so that the characteristic of adjustable wave absorbing frequency is realized. At present, although absorbers based on black phosphorus materials have good polarization dependence and good tunability, the wave absorbing capacity and the working bandwidth are still unsatisfactory. For example, 2016, U.S. northwest university k.aydin et al published in Nano Letters journal, "Localized surface patches in monolithic black phosphor", the paper used a single-layer band-shaped black phosphor to realize the application of a two-dimensional material black phosphor to a wave absorber for the first time, but the wave absorbing efficiency of the wave absorber can only reach about 50%. Then, Feng Xiong et al published "Strong and anisotropic permeability in single layer black phosphor and its application as tunable polarizer in Journal of Optics Journal in 2017, and the paper applies single layer black phosphor, so that the wave absorbing rate of the wave absorber can reach 99.56% at 22.8 μm, but the wave absorbing rate of the wave absorber is only 22 μm to 25 μm at a wavelength range above 90%, and the practical application of the wave absorber is limited by the narrow bandwidth.
With the application of the broadband wave absorber in modern communication becoming more and more extensive, the design requires not only a device with high wave-absorbing efficiency but also high working bandwidth, while the prior art has general wave-absorbing efficiency on one hand, cannot obtain enough working bandwidth on the other hand, and lacks active tuning performance.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: in order to overcome the defects in the prior art, the invention provides the super-surface broadband wave absorber with the bandwidth adjustable characteristic, which can improve the wave absorbing efficiency and has the active tuning performance.
The technical scheme adopted by the invention for solving the technical problems is as follows: the broadband wave absorber based on the multilayer black phosphorus and the super surface comprises a metal base plate and a dielectric substrate arranged on the upper layer of the metal base plate, wherein at least three belt-shaped black phosphorus layers are arranged above the dielectric substrate at intervals, the belt-shaped black phosphorus layers on the bottom layer are arranged on the upper surface of the dielectric substrate, the width of each belt-shaped black phosphorus layer is gradually narrowed from bottom to top, and dielectric plates which are the same in thickness and used for separating the belt-shaped black phosphorus layers are arranged between the belt-shaped black phosphorus layers.
Preferably, five band-shaped black phosphorus layers are arranged above the dielectric lining plate at intervals, the width of the five band-shaped black phosphorus layers is gradually narrowed from bottom to top and corresponds to resonance peaks at different positions, and a dielectric plate with the same thickness is arranged between every two adjacent band-shaped black phosphorus layers.
The dielectric plate and the dielectric substrate have the same dielectric constant.
The invention has the beneficial effects that: the invention utilizes the strip-shaped black phosphorus layers with different widths, solves the problem that the bandwidth of the existing perfect wave absorber based on the black phosphorus material is too narrow, widens the working bandwidth of the wave absorber, and realizes the characteristics of broadband absorption, dynamic adjustment and perfect wave absorption in the wave absorbing work.
Drawings
The invention is further illustrated with reference to the following figures and examples.
Fig. 1 is a schematic cross-sectional structure of the present invention.
FIG. 2 is a wave-absorbing effect diagram calculated by using a finite difference time domain method.
Fig. 3 is an absorption rate distribution diagram of the absorber when the black phosphorus doping concentration is changed.
In the figure: 1. metal base plate 2, dielectric lining plate 3, band-shaped black phosphorus layer 4 and dielectric plate
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
The broadband wave absorber based on the multilayer black phosphorus and the super surface as shown in fig. 1 comprises a metal base plate 1 and a dielectric substrate 2 arranged on the upper layer of the metal base plate 1, five belt-shaped black phosphorus layers 3 distributed at intervals from top to bottom are arranged above the dielectric substrate 2, the belt-shaped black phosphorus layer 3 on the bottom layer is arranged on the upper surface of the dielectric substrate 2, the width of the belt-shaped black phosphorus layer 3 gradually narrows from bottom to top and corresponds to resonance peaks at different positions, a dielectric plate 4 with the same thickness and used for separating the belt-shaped black phosphorus layers 3 is arranged between the adjacent belt-shaped black phosphorus layers 3, and the dielectric plate 4 and the dielectric substrate 2 have the same dielectric constant.
In this embodiment, the length and width p of the metal base plate 1 are the same as the period, where p is 200nm and the thickness s is 300 nm; the thickness h of the dielectric substrate 2 is 2500nm, the thickness d of the dielectric plate 4 used for separating the material of the band-shaped black phosphorus layer 3 is 150nm, the refractive index n of the material of the dielectric substrate 2 and the dielectric plate 4 is 1.7, and the widths of the five-layer band-shaped black phosphorus layer 3 are w from top to bottom1＝133nm,w2＝146nm,w3＝159nm,w4＝172nm,w5＝185nm。
The working principle of the wave absorber is as follows: the absorption rate calculation formula of the wave absorber is generally expressed as: the wave absorbing formula can be expressed as a 1-R, since the thickness of the metal base plate 1 is thick enough to make the transmittance T0 in the calculation. In the mid-infrared band, when a plane wave is perpendicularly incident to the surface of the band-shaped black phosphorus layer 3, surface plasmons (SPPs) of the black phosphorus can be excited, and a surface plasmon resonance effect is generated. At this time, the local field intensity energy excited when the plane wave is incident to the band-shaped black phosphor layer 3 is distributed on both sides of the band-shaped black phosphor layer 3, resulting in enhanced resonance absorption. When the width of the strip-shaped black phosphorus layer 3 is changed, the position of the resonance peak of the wave absorber can also drift correspondingly, and by using the thought, five strip-shaped black phosphorus layers 3 with different widths are stacked layer by layer, so that resonance superposition of different resonance peaks can be realized, and the broadband wave absorbing effect is realized; meanwhile, the doping concentration of the strip-shaped black phosphorus layer 3 is changed, so that the wave absorbing position of the black phosphorus broadband can be changed.
In this example, the wave-absorbing effect calculated by using the finite difference time domain method is shown in fig. 2, and when the electron doping concentration of the black phosphorus is 3 × 10, the super-surface wave absorber based on the multi-layer strip-shaped black phosphorus layer 3 is adopted13cm-2When the wavelength is in the wave band range of 15-30 μm, the absorption rate is above 90%, and the bandwidth is 15 μm. To further illustrate the effect of the electron doping concentration of black phosphorus on the absorption spectrum, fig. 3 shows the absorption rate distribution of black phosphorus to plane waves under different doping concentrations. When the doping concentration of black phosphorus is 4 x 1013cm-2When the microwave is in the wave band range of 13-27 mu m, the wave absorbing rate is more than 90 percentThe bandwidth is 14 mu m; when the electron doping concentration of black phosphorus is 5 × 1013cm-2In the wave band range of 13-23 μm, the wave absorbing rate is more than 90%, and the bandwidth is 10 μm; when the electron doping concentration of black phosphorus is increased to 6X 1013cm-2In the process, the wave absorbing efficiency and the bandwidth are both greatly reduced. Therefore, as the doping concentration increases, the wave absorbing position of the wave absorber gradually shifts to a low wave band, and the wave absorbing width gradually narrows. Therefore, by changing the doping concentration of the strip-shaped black phosphorus layer 3, the wave absorber can perform wave absorbing broadband adjustment, and the application range of the wave absorber is expanded.
In conclusion, the super-surface broadband wave absorber based on the two-dimensional material black phosphorus can realize broadband wave absorbing effect, can tune the wave absorbing bandwidth and realize broadband adjustable wave absorbing performance, and the wave absorber disclosed by the invention is simple in structure and can be applied to novel optoelectronic devices.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (2)
1. The utility model provides a broadband wave absorber based on black phosphorus and super surface, includes metal bottom plate and establishes the dielectric substrate on metal bottom plate upper layer, characterized by: five layers of strip-shaped black phosphorus layers are arranged above the dielectric lining plate at intervals, and the width of the five layers of strip-shaped black phosphorus layers is w from top to bottom1＝133nm、w2＝146nm、w3＝159nm、w4＝172nm、w5The band-shaped black phosphorus layer at the bottom layer is arranged on the upper surface of a dielectric lining plate, and a dielectric plate with the same thickness and used for separating the band-shaped black phosphorus layers is arranged between the adjacent band-shaped black phosphorus layers.
2. The black phosphorus and super surface based broadband wave absorber of claim 1, wherein: the dielectric plate and the dielectric substrate have the same dielectric constant.
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| CN113868965B (en) * | 2021-12-01 | 2022-02-22 | 北京芯可鉴科技有限公司 | Design method and system of black phosphorus wave absorber |
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| CN107221752A (en) * | 2017-05-05 | 2017-09-29 | 北京理工大学 | A kind of insensitive Meta Materials wave absorbing device of wide bandwidth angle polarization |
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| CN107221752A (en) * | 2017-05-05 | 2017-09-29 | 北京理工大学 | A kind of insensitive Meta Materials wave absorbing device of wide bandwidth angle polarization |
Non-Patent Citations (2)
| Title |
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| "Strong anisotropic perfect absorption in monolayer black phosphorous and its application as tunable polarizer";Feng Xiong et.al;《Journal of optics》;20170531;第19卷(第7期);正文第3页 * |
| "Localized surface plasmons in Nanostructured Monolayer Black Phosphorus";Zizhuo Liu et. al;《Nano Letters》;20160506;第16卷(第6期);3457-3462 * |
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