CN108183693A - 一种低噪声微波放大器电路 - Google Patents
一种低噪声微波放大器电路 Download PDFInfo
- Publication number
- CN108183693A CN108183693A CN201810008994.XA CN201810008994A CN108183693A CN 108183693 A CN108183693 A CN 108183693A CN 201810008994 A CN201810008994 A CN 201810008994A CN 108183693 A CN108183693 A CN 108183693A
- Authority
- CN
- China
- Prior art keywords
- type field
- field effect
- circuit
- effect transistors
- inductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 150
- 239000003990 capacitor Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003985 ceramic capacitor Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000001151 other effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000005611 electricity Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810008994.XA CN108183693A (zh) | 2018-01-04 | 2018-01-04 | 一种低噪声微波放大器电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810008994.XA CN108183693A (zh) | 2018-01-04 | 2018-01-04 | 一种低噪声微波放大器电路 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108183693A true CN108183693A (zh) | 2018-06-19 |
Family
ID=62549917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810008994.XA Pending CN108183693A (zh) | 2018-01-04 | 2018-01-04 | 一种低噪声微波放大器电路 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108183693A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090102552A1 (en) * | 2007-10-18 | 2009-04-23 | Renesas Technology Corp. | Semiconductor integrated circuit with variable gain amplifier |
US20090108943A1 (en) * | 2007-10-24 | 2009-04-30 | Industrial Technology Research Institute | Low noise amplifier |
CN101834567A (zh) * | 2010-06-03 | 2010-09-15 | 中国人民解放军国防科学技术大学 | 宽带增益可调低噪声放大器 |
US20110095822A1 (en) * | 2009-10-23 | 2011-04-28 | Sunplus Technology Co., Ltd. | Variable-gain low noise amplifier |
CN207968430U (zh) * | 2018-01-04 | 2018-10-12 | 翰通飞芯(常州)电子科技有限公司 | 一种低噪声微波放大器电路 |
-
2018
- 2018-01-04 CN CN201810008994.XA patent/CN108183693A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090102552A1 (en) * | 2007-10-18 | 2009-04-23 | Renesas Technology Corp. | Semiconductor integrated circuit with variable gain amplifier |
US20090108943A1 (en) * | 2007-10-24 | 2009-04-30 | Industrial Technology Research Institute | Low noise amplifier |
US20110095822A1 (en) * | 2009-10-23 | 2011-04-28 | Sunplus Technology Co., Ltd. | Variable-gain low noise amplifier |
CN101834567A (zh) * | 2010-06-03 | 2010-09-15 | 中国人民解放军国防科学技术大学 | 宽带增益可调低噪声放大器 |
CN207968430U (zh) * | 2018-01-04 | 2018-10-12 | 翰通飞芯(常州)电子科技有限公司 | 一种低噪声微波放大器电路 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181106 Address after: 100101 room 488, four seat, block C, 1 building, No. 2, Yongcheng North Road, Haidian District, Beijing. Applicant after: Beijing fly fly Electronic Technology Co., Ltd. Address before: 213000 21 Fu Lin Road, Zhong Lou District, Changzhou, Jiangsu Applicant before: Han Tong Fei core (Changzhou) Electronic Technology Co., Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181227 Address after: 100101 Building 1307, No. 6, Anhui 2, Chaoyang District, Beijing Applicant after: Wang Yuchen Address before: 100101 room 488, four seat, block C, 1 building, No. 2, Yongcheng North Road, Haidian District, Beijing. Applicant before: Beijing fly fly Electronic Technology Co., Ltd. |
|
TA01 | Transfer of patent application right |