CN108172631A - Thin film transistor (TFT) and preparation method thereof and array substrate - Google Patents
Thin film transistor (TFT) and preparation method thereof and array substrate Download PDFInfo
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- CN108172631A CN108172631A CN201810002184.3A CN201810002184A CN108172631A CN 108172631 A CN108172631 A CN 108172631A CN 201810002184 A CN201810002184 A CN 201810002184A CN 108172631 A CN108172631 A CN 108172631A
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- film transistor
- thin film
- tft
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- 239000010409 thin film Substances 0.000 title claims abstract description 201
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 38
- 230000003068 static effect Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 111
- 238000000034 method Methods 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- -1 wherein Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
Abstract
The invention discloses a kind of thin film transistor (TFT) and preparation method thereof and array substrates.Thin film transistor (TFT) includes：Grid, source electrode, drain electrode and semiconductor layer, wherein, semiconductor layer includes channel region, source area and drain region, and source area and drain region are located at the both sides of channel region respectively, and the making material of semiconductor layer is oxide semiconductor material；Thin film transistor (TFT) further includes resistive element, and one end of resistive element is electrically connected with source area, and the other end of resistive element is electrically connected with drain region, and resistive element is used to increase the off-state current of thin film transistor (TFT).In a source and drain interpolar resistive element in parallel, the appropriate off-state current for increasing oxide thin film transistor, it can solve the problem of that ghost occurs in pixel during thin film transistor (TFT) OFF state in pixel-driving circuit, while can ensure that electrostatic discharges in time in static release circuit.
Description
Technical field
The present invention relates to display technology field, more particularly, to a kind of thin film transistor (TFT) and preparation method thereof and array
Substrate.
Background technology
Display panel mainly includes two major class at present：LCD display panel (Liquid Crystal Display, liquid crystal
Show panel) and OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display panel.In display panel
In technology, TFT (Thin Film Transistor, thin film field effect transistor) is the core component of display panel, generally in
Array arrangement is produced on substrate, the switching device as display panel pixel unit.Thin film transistor (TFT) includes：Grid, source electrode,
Drain electrode and active layer, source electrode and drain electrode are connect respectively with active layer, after voltage is applied to grid, as grid voltage increases,
Active layer surface will be changed into electron accumulation layer by depletion layer, be formed inversion layer, (be reached cut-in voltage when reaching strong inversion
When), active layer has carrier movement to realize the conducting between source electrode and drain electrode.For structure, according to the position of grid, film
Transistor is generally divided into two kinds of structures of top-gated and bottom gate.
The making material of active layer includes amorphous silicon material, polycrystalline silicon material, oxide semiconductor material in thin film transistor (TFT)
Material etc., wherein, oxide semiconductor thin-film transistor become the fine liquid crystal display panel of driving superelevation, organic light emitting display panel and
One of thin-film-transistor material optimal candidate of a new generation such as Electronic Paper display.Oxide semiconductor thin-film transistor and amorphous
Silicon materials or polycrystalline silicon material thin film transistor (TFT) are compared, and have relatively low off-state current, are advantageously reduced storage capacitance, are reduced
Power consumption.But due to its relatively low off-state current, other harmful effects are also brought along in application.For example, in pixel driver
In circuit, off-state current is too small to be caused to show that ghost occurs in picture；In static release circuit, off-state current is too small can cause it is quiet
Electricity can not discharge in time.In short, off-state current is too small to generate the performance reliability of display panel certain influence.
Therefore it provides a kind of thin film transistor (TFT) and preparation method thereof and array substrate, appropriate to increase off-state current raising property
Energy reliability is this field urgent problem to be solved.
Invention content
In view of this, the present invention provides a kind of thin film transistor (TFT) and preparation method thereof and array substrates, solve raising
The technical issues of performance reliability.
In a first aspect, in order to solve the above-mentioned technical problem, the present invention proposes a kind of thin film transistor (TFT), including：
Grid, source electrode, drain electrode and semiconductor layer, wherein, semiconductor layer includes channel region, source area and drain region, source
Polar region and drain region are located at the both sides of channel region respectively, and the making material of semiconductor layer is oxide semiconductor material；
Thin film transistor (TFT) further includes resistive element, and one end of resistive element is electrically connected with source area, resistive element it is another
End is electrically connected with drain region, and resistive element is used to increase the off-state current of thin film transistor (TFT).
Second aspect, in order to solve the above-mentioned technical problem, the present invention propose a kind of production method of thin film transistor (TFT), packet
It includes：
Make the grid of thin film transistor (TFT)；
Make the source electrode and drain electrode of thin film transistor (TFT)；
The semiconductor layer of thin film transistor (TFT) is made, semiconductor layer includes channel region, source area and drain region, source area and leakage
Polar region is located at the both sides of channel region respectively, and the making material of semiconductor layer is oxide semiconductor material；
Make the resistive element of thin film transistor (TFT), one end of resistive element is electrically connected with source area, resistive element it is another
End is electrically connected with drain region.
The third aspect, in order to solve the above-mentioned technical problem, the present invention propose a kind of array substrate, including proposed by the present invention
Any one thin film transistor (TFT).
Compared with prior art, thin film transistor (TFT) of the invention and preparation method thereof and array substrate realize following
Advantageous effect：
In a source and drain interpolar resistive element in parallel, it is thin suitably to increase oxide for thin film transistor (TFT) provided by the invention
The off-state current of film transistor, when can avoid thin film transistor (TFT) OFF state in pixel-driving circuit, there is the problem of ghost in pixel,
It can ensure that electrostatic discharges in time in static release circuit simultaneously, thin film transistor (TFT) provided by the invention is applied in display device
It can ensure the performance reliability of display device.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Description of the drawings
It is combined in the description and the attached drawing of a part for constitution instruction shows the embodiment of the present invention, and even
With its explanation together principle for explaining the present invention.
Fig. 1 is thin film transistor (TFT) schematic top plan view provided in an embodiment of the present invention；
Fig. 2 is the circuit reduction schematic diagram of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 3 is a kind of schematic top plan view of optional embodiment of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 4 is the schematic cross-section at tangent line Q positions in Fig. 3；
Fig. 5 is a kind of film layer structure figure of optional embodiment of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 6 is a kind of schematic top plan view of optional embodiment of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 7 is the film layer structure figure of another optional embodiment of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 8 is the schematic top plan view of another optional embodiment of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 9 is the flow chart of the production method of thin film transistor (TFT) provided in an embodiment of the present invention；
Figure 10 is a kind of flow of optional embodiment of the production method of thin film transistor (TFT) provided in an embodiment of the present invention
Figure；
Figure 11 is the stream of another optional embodiment of the production method of thin film transistor (TFT) provided in an embodiment of the present invention
Cheng Tu；
Figure 12 is the schematic top plan view of array substrate provided in an embodiment of the present invention.
Specific embodiment
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should be noted that：Unless in addition have
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the present invention
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, then in subsequent attached drawing does not need to that it is further discussed.
Inventor has found the off-state current of thin film transistor (TFT) in the relevant technologies than relatively low, when display device shutdown or exception
During power-off, be stored in charge in storage capacitance can not quick release, can cause thin film transistor (TFT) or display pixel also in
Bias state, and then thin film transistor (TFT) threshold drift or pixel is caused ghost occur, by taking liquid crystal display panel as an example, if display
Charge of the liquid crystal in the state biased for a long time, liquid crystal in panel pixel unit unidirectionally moves, and is adsorbed onto on alignment film
There is ghost；Inventor has found simultaneously, when for the static release circuit of Electro-static Driven Comb, leakage current (closes under low grid voltage state
State electric current) very little when, electrostatic can not discharge in time, can increase the Electro-static Driven Comb risk of display device.Thus inventor thinks oxygen
It is more more harm than good in some cases than relatively low off-state current in compound thin film transistor (TFT), and suitably increasing off-state current can carry
The performance reliability of high display device.
The present invention relates to a kind of thin film transistor (TFT) and array substrate, by oxide thin film transistor source and drain interpolar simultaneously
Join one block of resistance, the path that charge discharges when can increase thin film transistor (TFT) OFF state, to increase the pass of oxide thin film transistor
State electric current.
The present invention provides a kind of thin film transistor (TFT), and with reference to shown in Fig. 1 and Fig. 2, Fig. 1 is provided in an embodiment of the present invention
Thin film transistor (TFT) schematic top plan view, Fig. 2 are the circuit reduction schematic diagram of thin film transistor (TFT) provided in an embodiment of the present invention.It needs
Bright, thin film transistor (TFT) provided by the invention can be that top gate structure may be bottom grating structure, Fig. 1 only with bottom grating structure into
Row illustrates.
As shown in Figure 1, thin film transistor (TFT) includes：Grid G, source S, drain D and semiconductor layer 101, wherein, semiconductor
Layer 101 includes channel region 1011, source area 1012 and drain region 1013, and source area 1012 and drain region 1013 are located at raceway groove respectively
The both sides in area 1011, the making material of semiconductor layer 101 is oxide semiconductor material；Thin film transistor (TFT) further includes resistive element
One end of R, resistive element R are electrically connected with source area 1012, and the other end of resistive element R is electrically connected with drain region 1013, resistance
Element R is used to increase the off-state current of thin film transistor (TFT).As shown in Fig. 2, in circuit diagram, resistive element R be equivalent to
The source S and drain D of thin film transistor (TFT) are in parallel.
The array substrate made of thin film transistor (TFT) provided by the invention applies the pixel-driving circuit in display device
When middle, grid connection scan line, drain electrode connection data line, source electrode connection pixel electrode.Under the control of grid, the data of drain electrode
Line implements charge and discharge by thin film transistor (TFT) to the pixel capacitance of source electrode.When needing to pixel capacitance charge and discharge, film
Transistor is operated in the ON state of high current, and when not needing to pixel capacitance charge and discharge, thin film transistor (TFT) is operated in low current
OFF state, the low current of OFF state influences pixel capacitance electric leakage speed degree.Thin film transistor (TFT) provided by the invention is in source and drain interpolar
A resistive element in parallel when thin film transistor (TFT) is in OFF state, equivalent to increase the path of charge release, increases OFF state
Electric current, such storage capacitance can repid discharge, avoid display pixel and be in bias state, pixel is caused ghost occur.Together
Sample, thin film transistor (TFT) provided by the invention during static release circuit applied to display device, is closed when thin film transistor (TFT) is in
During state, equivalent to increase the path of charge release, off-state current is increased, can ensure that electrostatic discharges in time, reduce display
Device generates the risk of electrostatic.
Thin film transistor (TFT) provided by the invention, for the situation that oxide thin film transistor off-state current is too small, in source and drain
Interpolar one resistive element of parallel connection suitably increases the off-state current of oxide thin film transistor, pixel driver can be avoided electric
In road during thin film transistor (TFT) OFF state, there is the problem of ghost in pixel, while can ensure that electrostatic is released in time in static release circuit
It puts, thin film transistor (TFT) provided by the invention is applied to the performance reliability that can ensure display device in display device.
It should be noted that the resistive element in thin film transistor (TFT) provided by the invention, can be arranged on same with grid
Film layer, film layer same with source-drain electrode, film layer same with semiconductor layer can also be fabricated separately when thin film transistor (TFT) makes
Resistive element film layer.In the source and drain interpolar of a thin film transistor (TFT) resistive element in parallel, to increase the setting side of off-state current
Formula is within the scope of protection of the invention.
Further, in some optional embodiments, resistive element in thin film transistor (TFT) provided by the invention with
Semiconductor layer is located at same film layer.In the embodiment, resistive element and semiconductor layer are located at same film layer, and the one of resistive element
End is connect with the source area in semiconductor layer, and the other end is connect with the drain region in semiconductor layer, resistive element and semiconductor layer
Identical material may be used to make or different materials can also be used to make.Resistive element is in same with semiconductor layer
Film layer, resistive element and semiconductor layer establish the via not needed to when connecting between setting film layer and increase manufacturing process cost, should
The thin film transistor (TFT) that embodiment provides, it is simple in structure, the manufacturing process of via need not be increased during making, reduce technique making
Cost.Meanwhile in the embodiment, resistive element is produced in the original film layer structure of thin film transistor (TFT), thin film transistor (TFT)
New film layer structure is increased without during making, is conducive to the requirement of slimming.
Further, in some optional embodiments, Fig. 3 is a kind of for thin film transistor (TFT) provided in an embodiment of the present invention
The schematic top plan view of optional embodiment, Fig. 4 are the schematic cross-section at tangent line Q positions in Fig. 3.With reference to Fig. 3 and Fig. 4 institutes
Show, thin film transistor (TFT) includes grid G, source S, drain D, semiconductor layer 101 and resistive element R, and semiconductor layer 101 includes ditch
Road area 1011, source area 1012 and drain region 1013, resistive element R are located at same layer with semiconductor layer 101, resistive element R's
One end is electrically connected with source area 1012, and the other end of resistive element R is electrically connected with drain region 1013, it should be noted that Fig. 3 is only
By taking bottom grating structure thin film transistor (TFT) as an example, which is equally applicable to the thin film transistor (TFT) of top gate structure.
In the embodiment, resistive element is located at same layer with semiconductor layer, and resistive element can be by oxide semiconductor
Material is formed after conductive treatment.In this embodiment, resistive element is made with semiconductor layer of identical material, electricity
Resistance element can complete etching pattern with semiconductor layer in same manufacturing process, and it is resistance just to have etched obtained resistive element
Then larger oxide semiconductor carries out conductive treatment to oxide semiconductor again and realizes resistive element to reduce resistance
It makes.In the embodiment, resistive element can complete etching pattern, technique letter with semiconductor layer in same manufacturing process
Single easy, when making, does not need to increase additional manufacturing process, the embodiment and the system of existing oxide thin film transistor
Journey good compatibility increases the complexity of manufacturing process and structure less.It optionally, can be to the resistive element that etching is completed
Pattern carries out He, Ar or H2Corona treatment is to reduce the resistance of oxide semiconductor material.The gas kind of plasma treatment
Class, time and power level determine the resistance sizes of resistive element after conductive treatment.For specifically handling in the present invention
Technological parameter does not limit.
Further, in some optional embodiments, the resistance of resistive element R in thin film transistor (TFT) provided by the invention
It is worth for 100M Ω~100000M Ω/.In the source and drain interpolar parallel resistance element of thin film transistor (TFT), if the resistive element
Resistance is too big, and during thin film transistor (TFT) OFF state, the electric current for flowing through resistive element can be too small, it is impossible to play as charge release channel
Effect；If the resistance of the resistive element is too small, the electric current for flowing through resistive element during thin film transistor (TFT) OFF state can be caused too big, increased
Big power consumption.And the resistance value of resistive element is 100M Ω~100000M Ω/ in the thin film transistor (TFT) that the embodiment provides,
It ensure that the resistive element resistance value is sufficiently large, off-state current can be avoided excessive and increase power consumption, meanwhile, it ensure that the resistance hinders
It is worth sufficiently small, the channel of charge release when can be as thin film transistor (TFT) OFF state.
Further, in some optional embodiments, Fig. 5 is the another of thin film transistor (TFT) provided in an embodiment of the present invention
A kind of film layer structure figure of optional embodiment.Fig. 6 is the optional reality of another kind of thin film transistor (TFT) provided in an embodiment of the present invention
Apply the schematic top plan view of mode.With reference to shown in Fig. 5 and Fig. 6, thin film transistor (TFT) includes：Grid G, source S, drain D and
Semiconductor layer 101, wherein, semiconductor layer 101 includes channel region 1011, source area 1012 and drain region 1013, source area 1012
It is located at the both sides of channel region 1011 respectively with drain region 1013, the making material of semiconductor layer 101 is oxide semiconductor material；
First insulating layer 102 is between semiconductor layer 101 and grid G；Etching barrier layer 103 is located on semiconductor layer 101, etching
Barrier layer 103 covers channel region 1011 in the orthographic projection of semiconductor layer 101；Source S and drain D are located on semiconductor layer 101,
Wherein, source S is electrically connected with source area 1012, and drain D is electrically connected with drain region 1013, and usual thin film transistor (TFT) will also include lining
Substrate layer 105.As shown in fig. 6, thin film transistor (TFT) further includes resistive element R, one end and 1012 electricity of source area of resistive element R
Connection, the other end of resistive element R are electrically connected with drain region 1013, and resistive element R is used to increase the OFF state electricity of thin film transistor (TFT)
Stream.It should be noted that it is only showed in Fig. 6 in order to clearly illustrate the relationship between resistive element R and source S/drain D
Part-structure in thin film transistor (TFT).
The embodiment provides a kind of oxide thin film transistor of bottom grating structure, and etching barrier layer is in the positive throwing of semiconductor layer
Shadow covers channel region, ensure that channel region is not led when carrying out conductive treatment to the source area of semiconductor layer and drain region
Electrification ensures that film transistor device is effective, wherein, conductive treatment can be a certain amount of in source area and drain region doping
Hydrogen ion makes source area and drain region become conductor.In the embodiment, oxide thin film transistor source electrode and drain electrode it
Between a resistive element in parallel, when thin film transistor (TFT) be in OFF state, equivalent to increase the path that charge discharges, increase pass
State electric current can make storage capacitance repid discharge in circuit when thin film transistor (TFT) is applied to pixel-driving circuit, avoid aobvious
Show that pixel is in bias state, pixel is caused ghost occur；When thin film transistor (TFT) is applied to static release circuit, it can ensure quiet
Electric release in time.Meanwhile in the embodiment, resistive element can be located at same layer with the semiconductor layer of thin film transistor (TFT), can
Choosing, resistive element is made, and can be completed in same manufacturing process with semiconductor layer of the material of identical material
The etching of pattern, the structure of thin film transistor (TFT) is simple, and resistive element and semiconductor layer are not needed to when establishing connection between setting film layer
Via and increase manufacturing process cost.In addition, resistive element is produced in the original film layer structure of thin film transistor (TFT), film
Transistor is increased without new film layer structure, is conducive to the requirement of slimming.
Further, in some optional embodiments, Fig. 7 is the another of thin film transistor (TFT) provided in an embodiment of the present invention
A kind of film layer structure figure of optional embodiment.Fig. 8 is the optional reality of another kind of thin film transistor (TFT) provided in an embodiment of the present invention
Apply the schematic top plan view of mode.With reference to shown in Fig. 7 and Fig. 8, thin film transistor (TFT) includes：Grid G, source S, drain D and
Semiconductor layer 101, wherein, semiconductor layer 101 includes channel region 1011, source area 1012 and drain region 1013, source area 1012
It is located at the both sides of channel region 1011 respectively with drain region 1013, the making material of semiconductor layer 101 is oxide semiconductor material；
First insulating layer 102 is between semiconductor layer 101 and grid G；Second insulating layer 104 is located on grid G；Source S and leakage
Pole D is located on second insulating layer 104, and source S and drain D pass through via K and source area 1012 and 1013 electricity of drain region respectively
Connection, usual thin film transistor (TFT) will also include underlay substrate layer 105.As shown in figure 8, thin film transistor (TFT) further includes resistive element R,
One end of resistive element R is electrically connected with source area 1012, and the other end of resistive element R is electrically connected with drain region 1013, resistance member
Part R is used to increase the off-state current of thin film transistor (TFT).It should be noted that in order to clearly illustrate resistive element and source in Fig. 8
Relationship between the drain electrode of pole, the part-structure in the thin film transistor (TFT) that only shows.
The embodiment provides a kind of oxide thin film transistor of top gate structure, oxide thin film transistor source electrode and
One resistive element of parallel connection between drain electrode when thin film transistor (TFT) is in OFF state, equivalent to increase the path of charge release, increases
Big off-state current, can make storage capacitance repid discharge in circuit when thin film transistor (TFT) is applied to pixel-driving circuit, keep away
Display pixel is exempted from and has been in bias state, pixel is caused ghost occur；It, can when thin film transistor (TFT) is applied to static release circuit
Ensure that electrostatic discharges in time.Meanwhile in the embodiment, resistive element can be located at same with the semiconductor layer of thin film transistor (TFT)
Layer, optionally, resistive element are made, and can be in same manufacturing process with semiconductor layer of the material of identical material
The etching of finishing patterns, the structure of thin film transistor (TFT) is simple, and resistive element does not need to setting film when establishing and connect with semiconductor layer
The via of interlayer and increase manufacturing process cost.In addition, resistive element is produced in the original film layer structure of thin film transistor (TFT),
Thin film transistor (TFT) is increased without new film layer structure, is conducive to the requirement of slimming.
The embodiment of the present invention also provides a kind of production method of thin film transistor (TFT), thin film transistor (TFT) provided by the invention and
The production method of thin film transistor (TFT) belongs to a total inventive concept, when understanding the present invention, the implementation about thin film transistor (TFT)
The embodiment of example and the production method of thin film transistor (TFT) can be referred to mutually.
Fig. 9 is the flow chart of the production method of thin film transistor (TFT) provided in an embodiment of the present invention, as shown in figure 9, film is brilliant
The production method of body pipe, including：
Step S101：Make the grid of thin film transistor (TFT)；
Step S102：Make the source electrode and drain electrode of thin film transistor (TFT)；
Step S103：The semiconductor layer of thin film transistor (TFT) is made, semiconductor layer includes channel region, source area and drain region,
Source area and drain region are located at the both sides of channel region respectively, and the making material of semiconductor layer is oxide semiconductor material；
Step S104：The resistive element of thin film transistor (TFT) is made, one end of resistive element is electrically connected with source area, resistance member
The other end of part is electrically connected with drain region.
Use the schematic top plan view of thin film transistor (TFT) that the embodiment makes can be with refering to what is shown in Fig. 1, using the implementation
The thin film transistor (TFT) that mode makes when thin film transistor (TFT) is in OFF state, is equivalent in a source and drain interpolar resistive element in parallel
The path of charge release is increased, increases off-state current.When thin film transistor (TFT) is applied in pixel-driving circuit, film crystal
Pipe under OFF state storage capacitance can repid discharge, avoid display pixel and be in bias state, pixel is caused ghost occur.It is thin
Film transistor be applied to display device static release circuit when, when thin film transistor (TFT) is in OFF state, can ensure electrostatic and
When discharge, reduce display device generate electrostatic risk.
Further, in some optional embodiments, the semiconductor layer of thin film transistor (TFT) is made in step S103
It is further included before step：Make oxide semiconductor thin-film；Oxide semiconductor thin-film is performed etching, forms thin film transistor (TFT)
The figure of semiconductor layer and the figure of resistive element.Thin film transistor (TFT) is made using the embodiment, resistive element and is partly led
Body layer is made of identical material, the etching of finishing patterns in same manufacturing process establishes resistive element with partly leading
The connection of body layer, resistive element are in same film layer with semiconductor layer, do not need to increase the mistake that resistive element is connect with semiconductor
Hole processing procedure, it is simple for process.
Further, in some optional embodiments, step S104 makes the step of the resistive element of thin film transistor (TFT)
Suddenly it further includes：Conductive treatment is carried out to the figure of resistive element.In the embodiment, etching forms the pattern of resistive element
Afterwards, resistive element remains as semi-conductive state, is equivalent to the bigger resistance of resistance value, since resistance value is larger, resistance member at this time
Part cannot be appropriate increase off-state current, need to carry out conductive treatment to the figure of resistive element, to reduce resistive element
Resistance, optionally, the resistance value of resistive element is 100M Ω~100000M Ω/ after conductive treatment, ensure that the resistive element
Resistance value is sufficiently large, and off-state current can be avoided excessive and increase power consumption, meanwhile, it ensure that the resistance is sufficiently small, Neng Gouzuo
The channel that charge discharges during for thin film transistor (TFT) OFF state.
Optionally, it is specially to the step of figure of resistive element progress conductive treatment：Using He, Ar or H2Plasma
Body treatment process carries out conductive treatment to the figure of resistive element.Gaseous species, time and the power level of plasma treatment
Determine the resistance sizes of resistive element after conductive treatment.In the embodiment, resistive element can be same with semiconductor layer
Complete etching pattern in one manufacturing process, when making, does not need to increase additional manufacturing process, the embodiment with it is existing
The process compatibility of oxide thin film transistor is good, the complexity of manufacturing process and structure is increased less.
Further, Figure 10 is a kind of optional embodiment party of the production method of thin film transistor (TFT) provided in an embodiment of the present invention
The flow chart of formula, as shown in Figure 10, the production method of thin film transistor (TFT), including：
Step S201：Make the grid of thin film transistor (TFT).
Step S202：The first insulating layer is made on grid.
Step S203：Make oxide semiconductor thin-film；Oxide semiconductor thin-film is performed etching, forms film crystal
The figure of the semiconductor layer of pipe and the figure of resistive element.
Step S204：Etching barrier layer is made in semiconductor layer, etching barrier layer is covered in the orthographic projection of semiconductor layer
Lid channel region；Optionally, the making material of etching barrier layer is aluminium oxide or titanium oxide etc., be ensure that semiconductor layer
When source area and drain region carry out conductive treatment, channel region by conducting, does not ensure that film transistor device is effective.
Step S205：Conductive treatment is carried out to the figure of resistive element.
Step S206：Semiconductor layer make source electrode and drain electrode, wherein, source electrode be electrically connected with source area, drain and
Drain region is electrically connected.
It should be noted that the step of conductive treatment is carried out to source area and drain region is further included in the embodiment,
Since the conducting degree of source area and drain region is different from the conducting degree of resistive element, so should respectively make to source
The step of the step of polar region and drain region carry out conductive treatment and the figure progress conductive treatment to resistive element.
The film layer structure figure and schematic top plan view of the thin film transistor (TFT) made of the embodiment can be respectively with reference to figures 5
Shown in Fig. 6.A kind of oxide thin film transistor of bottom grating structure is made using the embodiment, in sull crystal
One resistive element of parallel connection, when thin film transistor (TFT) is in OFF state, is released equivalent to increase charge between the source electrode and drain electrode of pipe
The path put increases off-state current, can make storage capacitance in circuit when thin film transistor (TFT) is applied to pixel-driving circuit
Repid discharge avoids display pixel and is in bias state, pixel is caused ghost occur；Thin film transistor (TFT) is applied to Electro-static Driven Comb
During circuit, it can ensure that electrostatic discharges in time.In the embodiment, resistive element uses the material of identical material with semiconductor layer
Make, and can in same manufacturing process finishing patterns etching, when making do not need to increase additional manufacturing process,
The embodiment and the process compatibility of existing oxide thin film transistor are good, and the complexity of manufacturing process and structure is increased
It is less.
Further, Figure 11 is the optional implementation of another kind of the production method of thin film transistor (TFT) provided in an embodiment of the present invention
The flow chart of mode, as shown in figure 11, the production method of thin film transistor (TFT), including：
Step S301：Make oxide semiconductor thin-film；Oxide semiconductor thin-film is performed etching, forms film crystal
The figure of the semiconductor layer of pipe and the figure of resistive element.
Step S302：The first insulating layer is made in semiconductor layer.
Step S303：Make the grid of thin film transistor (TFT).
Step S304：Conductive treatment is carried out to the figure of resistive element.
Step S305：Second insulating layer is made on grid.
Step S306：The via connected with the source region of semiconductor layer and drain region is made over the second dielectric；
Step S307：Source electrode and drain electrode is made over the second dielectric, wherein, source electrode and drain electrode passes through via and source respectively
Polar region is connected with drain region.
It should be noted that the step of conductive treatment is carried out to source area and drain region is further included in the embodiment,
Since the conducting degree of source area and drain region is different from the conducting degree of resistive element, so should respectively make to source
The step of the step of polar region and drain region carry out conductive treatment and the figure progress conductive treatment to resistive element.
The film layer structure figure and schematic top plan view of the thin film transistor (TFT) made of the embodiment can be respectively with reference to figures 7
Shown in Fig. 8.A kind of oxide thin film transistor of top gate structure is made using the embodiment, in sull crystal
One resistive element of parallel connection, when thin film transistor (TFT) is in OFF state, is released equivalent to increase charge between the source electrode and drain electrode of pipe
The path put increases off-state current, can make storage capacitance in circuit when thin film transistor (TFT) is applied to pixel-driving circuit
Repid discharge avoids display pixel and is in bias state, pixel is caused ghost occur；Thin film transistor (TFT) is applied to Electro-static Driven Comb
During circuit, it can ensure that electrostatic discharges in time.In the embodiment, resistive element uses the material of identical material with semiconductor layer
Make, and can in same manufacturing process finishing patterns etching, when making do not need to increase additional manufacturing process,
The embodiment and the process compatibility of existing oxide thin film transistor are good, and the complexity of manufacturing process and structure is increased
It is less.
Further, the present invention also provides a kind of array substrate, Figure 12 is array substrate provided in an embodiment of the present invention
Schematic top plan view, array substrate include viewing area AA and non-display area BA, and array substrate includes pixel-driving circuit and electrostatic is released
Electric discharge road, pixel-driving circuit and/or static release circuit include the thin film transistor (TFT) described in any embodiment of the present invention.This
It invents in the array substrate provided, one resistive element of parallel connection between source-drain electrode of the thin film transistor (TFT) in pixel-driving circuit,
When thin film transistor (TFT) is in OFF state, equivalent to increase the path of charge release, off-state current, such storage capacitance are increased
Can repid discharge, avoid display pixel and be in bias state, pixel is caused ghost occur.Film is brilliant in static release circuit
Body pipe one resistive element of parallel connection between source-drain electrode when thin film transistor (TFT) is in OFF state, is discharged equivalent to increase charge
Path, increase off-state current, can ensure that electrostatic discharges in time, reduce display device generate electrostatic risk.
By above-described embodiment it is found that thin film transistor (TFT) and preparation method thereof and array substrate of the present invention, reached as
Under advantageous effect：
Thin film transistor (TFT) provided by the invention, for the situation that oxide thin film transistor off-state current is too small, in source and drain
Interpolar one resistive element of parallel connection suitably increases the off-state current of oxide thin film transistor, pixel driver can be avoided electric
In road during thin film transistor (TFT) OFF state, there is the problem of ghost in pixel, while can ensure that electrostatic is released in time in static release circuit
It puts, thin film transistor (TFT) provided by the invention is applied to the performance reliability that can ensure display device in display device.
Although some specific embodiments of the present invention are described in detail by example, the skill of this field
Art personnel it should be understood that example above merely to illustrating, the range being not intended to be limiting of the invention.The skill of this field
Art personnel are it should be understood that can without departing from the scope and spirit of the present invention modify to above example.This hair
Bright range is defined by the following claims.
Claims (13)
1. a kind of thin film transistor (TFT), which is characterized in that including：
Grid, source electrode, drain electrode and semiconductor layer, wherein, the semiconductor layer includes channel region, source area and drain region, institute
The both sides that source area and the drain region are located at the channel region respectively are stated, the making material of the semiconductor layer is oxide half
Conductor material；
The thin film transistor (TFT) further includes resistive element, and one end of the resistive element is electrically connected with the source area, the electricity
The other end of resistance element is electrically connected with the drain region, and the resistive element is used to increase the OFF state electricity of the thin film transistor (TFT)
Stream.
2. thin film transistor (TFT) according to claim 1, which is characterized in that
The resistive element is located at same film layer with the semiconductor layer.
3. thin film transistor (TFT) according to claim 2, which is characterized in that
The resistive element is formed by the oxide semiconductor material after conductive treatment.
4. thin film transistor (TFT) according to claim 3, which is characterized in that
The resistance value of the resistive element is 100M Ω~100000M Ω/.
5. thin film transistor (TFT) according to claim 2, which is characterized in that
The thin film transistor (TFT) further includes：
First insulating layer, between the semiconductor layer and the grid；
Etching barrier layer, positioned at the semiconductor layer, the etching barrier layer is covered in the orthographic projection of the semiconductor layer
The channel region；
The source electrode and the drain electrode are located at the semiconductor layer, wherein, the source electrode is electrically connected with the source area, institute
Drain electrode is stated to be electrically connected with the drain region.
6. thin film transistor (TFT) according to claim 2, which is characterized in that
The thin film transistor (TFT) further includes：
First insulating layer, between the semiconductor layer and the grid；
Second insulating layer, on the grid；
Wherein, the source electrode and the drain electrode are located on the second insulating layer, and the source electrode and the drain electrode pass through respectively
Via is electrically connected with the source area and the drain region.
7. a kind of production method of thin film transistor (TFT), which is characterized in that including：
Make the grid of the thin film transistor (TFT)；
Make the source electrode and drain electrode of the thin film transistor (TFT)；
The semiconductor layer of the thin film transistor (TFT) is made, the semiconductor layer includes channel region, source area and drain region, the source
Polar region and the drain region are located at the both sides of the channel region respectively, and the making material of the semiconductor layer is oxide semiconductor
Material；
The resistive element of the thin film transistor (TFT) is made, one end of the resistive element is electrically connected with the source area, the electricity
The other end of resistance element is electrically connected with the drain region.
8. the production method of thin film transistor (TFT) according to claim 7, which is characterized in that making the thin film transistor (TFT)
Semiconductor layer the step of before further include：
Make oxide semiconductor thin-film；
The oxide semiconductor thin-film is performed etching, forms the figure of the semiconductor layer of the thin film transistor (TFT) and the electricity
The figure of resistance element.
9. the production method of thin film transistor (TFT) according to claim 8, which is characterized in that
The step of resistive element for making the thin film transistor (TFT), further includes：
Conductive treatment is carried out to the figure of the resistive element.
10. the production method of thin film transistor (TFT) according to claim 9, which is characterized in that
The step of carrying out conductive treatment to the figure of the resistive element be specially：
Using He, Ar or H2Plasma-treating technology carries out conductive treatment to the figure of the resistive element.
11. the production method of thin film transistor (TFT) according to claim 9, which is characterized in that
It is further included after the step of making the grid of the thin film transistor (TFT)：The first insulating layer is made on the grid；It is right
The figure of the resistive element further included before the step of conductive treatment：Etching resistance is made in the semiconductor layer
Barrier, the etching barrier layer cover the channel region in the orthographic projection of the semiconductor layer；
It is further included after the step of carrying out conductive treatment to the figure of the resistive element：
The source electrode and the drain electrode are made in the semiconductor layer, wherein, the source electrode is electrically connected with the source area,
The drain electrode is electrically connected with the drain region.
12. the production method of thin film transistor (TFT) according to claim 9, which is characterized in that
It is further included before the step of carrying out conductive treatment to the figure of the resistive element：
The first insulating layer is made in the semiconductor layer；
It is further included after the step of carrying out conductive treatment to the figure of the resistive element：
Second insulating layer is made on the grid；
The via connected with the source region of the semiconductor layer and drain region is made in the second insulating layer；
The source electrode and the drain electrode are made in the second insulating layer, wherein, the source electrode and the drain electrode pass through respectively
Via is connect with the source area and the drain region.
13. a kind of array substrate, which is characterized in that the array substrate includes pixel-driving circuit and static release circuit, institute
It states pixel-driving circuit and/or the static release circuit includes claim 1 to 6 any one of them thin film transistor (TFT).
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| JPH11345981A (en) * | 1999-05-19 | 1999-12-14 | Seiko Epson Corp | Manufacture of semiconductor device |
| US20050067626A1 (en) * | 2003-09-25 | 2005-03-31 | Toppoly Optoelectronics Corp. | LCD having semiconductor components |
| JP2005338285A (en) * | 2004-05-25 | 2005-12-08 | Sanyo Electric Co Ltd | Liquid crystal display device |
| CN1928681A (en) * | 2005-09-05 | 2007-03-14 | 中华映管股份有限公司 | Thin-film transistor array substrate, its electric static discharge protector and method for making same |
| CN104977599A (en) * | 2014-04-11 | 2015-10-14 | 株式会社东芝 | Photodetector |
| CN107039466A (en) * | 2017-05-04 | 2017-08-11 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
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| JPH11345981A (en) * | 1999-05-19 | 1999-12-14 | Seiko Epson Corp | Manufacture of semiconductor device |
| US20050067626A1 (en) * | 2003-09-25 | 2005-03-31 | Toppoly Optoelectronics Corp. | LCD having semiconductor components |
| JP2005338285A (en) * | 2004-05-25 | 2005-12-08 | Sanyo Electric Co Ltd | Liquid crystal display device |
| CN1928681A (en) * | 2005-09-05 | 2007-03-14 | 中华映管股份有限公司 | Thin-film transistor array substrate, its electric static discharge protector and method for making same |
| CN104977599A (en) * | 2014-04-11 | 2015-10-14 | 株式会社东芝 | Photodetector |
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