CN108169827A - A kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film - Google Patents
A kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film Download PDFInfo
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- CN108169827A CN108169827A CN201711461422.9A CN201711461422A CN108169827A CN 108169827 A CN108169827 A CN 108169827A CN 201711461422 A CN201711461422 A CN 201711461422A CN 108169827 A CN108169827 A CN 108169827A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
Abstract
The invention discloses a kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film, the preparation method includes：Obtain the target deposition thickness of film layer in the deep ultraviolet band broadband beam splitting film；According to the target deposition thickness, experiment deposition is carried out to the film layer；After the completion of the film deposition, the measurement error value of the film layer is obtained；According to the target deposition thickness and the measurement error value, the actual deposition thickness of the film layer is obtained；According to the actual deposition thickness, the film layer is deposited.The preparation method eliminates the influence that the crystal oscillator thickness measurement error caused by the thermal agitation generated during each film deposition generates deep ultraviolet band broadband all-dielectric beam splitting film performance.
Description
Technical field
The present invention relates to deep ultraviolet optical applied technical fields, and more specifically more particularly to a kind of deep ultraviolet band is wide
Preparation method with beam splitting pellicle film.
Background technology
With the continuous development of science and technology, deep ultraviolet optical technology and application obtain quick development, in spatial loop
The fields such as border and material have consequence and economic value.
Deep ultraviolet band beam splitting thin-film component based on 190nm-260nm, generally using two ways：One kind is using gold
Belong to film, another kind is using all dielectric film.For metal broadband beam splitting film, its main feature is that broader bandwidth, still
Spectral reflectivity or transmissivity in work band are not very average, and be only used in low power applications.Based on all dielectric
For film, its main feature is that bandwidth relative narrower, but available for light laser, such as 193nm, 240nm and operation wavelength position
In free-electron laser of dark purple exterior domain etc., therefore all dielectric beam splitting film can be used for bearing the application of stronger optical power
In.
In the preparation process of conventional beam splitting film, ultraviolet or visible light wave range is realized high performance by the way of light-operated
Beam splitting film preparation, but in deep ultraviolet band region, the general less precision for being equipped with light control system or light control system is relatively not
Height, therefore ultraviolet band broadband all-dielectric beam splitting film is generally prepared using the method for crystal oscillator control.
But deep ultraviolet band broadband all-dielectric beam splitting film is prepared using crystal oscillator control method and is had the following disadvantages,
One, deep ultraviolet band broadband all-dielectric beam splitting film membrane system is non-regular thin film, wherein some film layer physical thickness only have it is several
Nanometer；Second, medium membrane material is larger with the degree of process condition fluctuations in the refractive index of deep ultraviolet band；Third, each
During a film deposition, APS (Air Plasma Spraying, advanced plasma source) is between electron beam evaporation material
Thermal agitation can have an impact the physical thickness measurement accuracy of crystal oscillator, cause to generate measurement error, the error is for deep ultraviolet
The performance of band broadband all dielectric beam splitting film influences very big.
So, the crystal oscillator thickness measurement error pair caused by the thermal agitation generated during each film deposition how is solved
The influence that deep ultraviolet band broadband all-dielectric beam splitting film performance generates, is those skilled in the art's urgent problem to be solved.
Invention content
To solve the above problems, the present invention provides a kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film,
The crystal oscillator thickness measurement error caused by the thermal agitation generated during each film deposition in the prior art is solved to dark purple
The influence that wave section broadband all-dielectric beam splitting film performance generates.
To achieve the above object, the present invention provides following technical solution：
A kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film, the preparation method include：
Obtain the target deposition thickness of film layer in the deep ultraviolet band broadband beam splitting film；
According to the target deposition thickness, experiment deposition is carried out to the film layer；
After the completion of the film deposition, the measurement error value of the film layer is obtained；
According to the target deposition thickness and the measurement error value, the actual deposition thickness of the film layer is obtained；
According to the actual deposition thickness, the film layer is deposited.
Preferably, it is described according to the target deposition thickness in above-mentioned preparation method, it is heavy that experiment is carried out to the film layer
Product includes：
Using plasma asistance electron-beam evaporation technology, when the film deposition starts, advanced plasma is opened
Source baffle and electron beam evaporation source baffle, according to the target deposition thickness and based on predetermined angle incidence, to the film layer
Carry out experiment deposition.
Preferably, in above-mentioned preparation method, the predetermined angle is 0 degree.
Preferably, described after the completion of the film deposition in above-mentioned preparation method, the measurement for obtaining the film layer misses
Difference includes：
After the completion of the film deposition, the advanced plasma source baffle and the electron beam evaporation source baffle are closed,
Obtain the measurement error value caused by thermal agitation between advanced plasma and electron beam evaporation material.
Preferably, it is described according to the actual deposition thickness in above-mentioned preparation method, deposition packet is carried out to the film layer
It includes：
One substrate is provided；
Using plasma asistance electron-beam evaporation technology, when each layer film deposition starts, open advanced
Plasma source baffle and electron beam evaporation source baffle, according to the actual deposition thickness of each layer film layer, in the base
It is deposited successively on bottom.
Preferably, in above-mentioned preparation method, the substrate is SiO2Substrate.
Preferably, in above-mentioned preparation method, the substrate is ultraviolet fused quartz optical substrate.
Preferably, in above-mentioned preparation method, the vacuum degree ＜ 1 × 10 of the ultraviolet fused quartz optical substrate-6mbar。
Preferably, in above-mentioned preparation method, the warm temperature of the ultraviolet fused quartz optical substrate is 100 DEG C to 200
Between DEG C, including endpoint value.
By foregoing description it is found that a kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film provided by the invention
Including：Obtain the target deposition thickness of film layer in the deep ultraviolet band broadband beam splitting film；According to the target deposition thickness,
Experiment deposition is carried out to the film layer；After the completion of the film deposition, the measurement error value of the film layer is obtained；According to described in
Target deposition thickness and the measurement error value obtain the actual deposition thickness of the film layer；According to the actual deposition thickness,
The film layer is deposited.
The preparation method solves the crystal oscillator caused by the thermal agitation generated during each film deposition in the prior art
The influence that thickness measure error generates deep ultraviolet band broadband all-dielectric beam splitting film performance.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow of the preparation method of deep ultraviolet band broadband beam splitting pellicle film provided in an embodiment of the present invention
Schematic diagram.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is a kind of flow of the preparation method of deep ultraviolet band broadband beam splitting pellicle film provided in an embodiment of the present invention
Schematic diagram.
The preparation method includes：
S101：Obtain the target deposition thickness of film layer in the deep ultraviolet band broadband beam splitting film.
Specifically, since the deep ultraviolet band broadband beam splitting film is the stratified film that is sequentially depositing in substrate, because
This, before deposition starts, it is first determined the target deposition thickness of each film layer in the deep ultraviolet band broadband beam splitting film,
The target deposition thickness is the desired deposition thickness after the completion of film deposition.
S102：According to the target deposition thickness, experiment deposition is carried out to the film layer.
Specifically, using plasma asistance electron-beam evaporation technology, when the film deposition starts, open advanced
Plasma source baffle and electron beam evaporation source baffle, according to the target deposition thickness and based on predetermined angle incidence, to institute
It states film layer and carries out experiment deposition, wherein, the predetermined angle is 0 degree.
But after advanced plasma source baffle and electron beam evaporation source baffle are opened, plasma and electron beam evaporation
In material impact to crystal-vibration-chip, a thermal agitation is generated to crystal oscillator, even if crystal oscillator temperature moment increases, this thermal agitation will be one
The working frequency of crystal oscillator is made to generate a transition in the section time, is tended towards stability later, which can be to film deposition mistake
Thickness in journey introduces error, i.e. the thermal agitation leads to the deposition thickness of final film layer along with true physical deposition
More than target deposition thickness, that is to say, that the deposition thickness that crystal oscillator is shown at this time is actually that target deposition thickness is disturbed with the heat
Dynamic process it is coefficient as a result, and current technology cannot be distinguished and assess thermal agitation process generation Crystal Oscillator Errors it is big
It is small.
S103：After the completion of the film deposition, the measurement error value of the film layer is obtained.
Specifically, after the completion of each layer of film deposition, close the advanced plasma source baffle and the electron beam steams
Rise baffle, obtains the measurement error value caused by thermal agitation between advanced plasma and electron beam evaporation material.
That is, after the completion of each layer of film deposition, it is required to close the advanced plasma source baffle and the electricity
Beamlet evaporation source baffle, the at this time influence of advanced plasma and electron beam evaporation material to crystal oscillator are stopped, and will produce crystal oscillator
The thermal agitation process that a raw temperature reduces suddenly, still, due to the advanced plasma source baffle and the electron beam evaporation
Source baffle is closed, therefore the thermal agitation process will not have an impact the deposition thickness of film layer, i.e., the physics for being really
Deposition process has stopped, and is only left the influence of the thermal agitation, by according to deposition rate variation and its duration, assessing every
After the completion of one layer of film deposition, which measures the disturbance generated to crystal oscillator, thermal agitation in approximate evaluation step S102
The introduced film deposition error of process, i.e., described measurement error value.
S104：According to the target deposition thickness and the measurement error value, the actual deposition thickness of the film layer is obtained.
Specifically, target deposition thickness is 30nm in such as step S101, due to the thermal agitation problem in step S102, lead
The final deposition thickness of film layer is caused to be more than 30nm, the deposition thickness that crystal oscillator show at this time be actually target deposition thickness 30nm and
The thermal agitation process it is coefficient as a result, and current technology cannot be distinguished and assess the thermal agitation process generation crystal oscillator
Error size, but it is such as 3nm to measure the disturbance generated to crystal oscillator by thermal agitation process in appraisal procedure S103, approximation is commented
Estimate the introduced film deposition error 3nm of thermal agitation process in step S102, i.e., described measurement error value is 3nm, then, foundation
Target deposition thickness is 30nm and measurement error value is 3nm, and the actual deposition thickness that the film layer is calculated is 27nm, then
By using plasma asistance electron-beam evaporation technology, the film layer of 27nm is deposited, the film layer of 30nm may finally be obtained.
S105：According to the actual deposition thickness, the film layer is deposited.
Specifically, provide a substrate；Using plasma asistance electron-beam evaporation technology, sink in each layer film layer
When product starts, advanced plasma source baffle and electron beam evaporation source baffle are opened, the reality according to each layer film layer
Deposition thickness is deposited successively on the substrate.
That is, for each tunic layer, the actual deposition that each tunic layer is obtained by step S101-S104 is thick
Degree, respectively deposits each tunic layer according to the actual deposition thickness, and then solve each film layer in the prior art and sink
The crystal oscillator thickness measurement error caused by thermal agitation that product generates in the process is to deep ultraviolet band broadband all-dielectric beam splitting film
The influence that can be generated, is effectively improved the spectrophotometric spectra performance of prepared deep ultraviolet band broadband beam splitting coating, makes prepared sample
The measured spectra and Theoretical Design spectrum of product reach unanimity.
Further, in the preparation side of a kind of deep ultraviolet band broadband beam splitting pellicle film that the embodiment of the present invention is provided
Method, is used to prepare to obtain 0 degree of incidence, and 200nm-260nm wavelength regions reflectivity and refractive index be 50% beam splitting
Film, the beam splitting film have wider operating bandwidth in deep ultraviolet band, and the reflection and transmitted spectrum in bandwidth of operation are equal
It is relatively flat, can meet the needs of deep ultraviolet broadband light splitting.
Specifically, using plasma asistance electron-beam evaporation technology, wherein optionally, the generation of plasma uses
The advanced plasma source of German Lai Bao Optical Co., Ltd, using 270 degree of revolution electron beams, using copper crucible as container for evaporation, plating
Film substrate selects the ultraviolet optics substrates such as ultraviolet fused quartz, the vacuum degree ＜ 1 × 10 of substrate-6Mbar, the warm temperature of substrate
Between 100 DEG C to 200 DEG C, including endpoint value, thin film physics thickness is controlled using crystal-vibration-chip.
Further, in embodiments of the present invention, optionally, measured respectively using Lambda950 spectrophotometers made
Standby each tunic layer penetrates spectrum and reflectance spectrum, carries out the parsing of multipole value spectra inversion to its above-mentioned spectrum, can obtain
The optical constant of film.
It is optimized below by depositing operation is carried out to individual layer film layer, optionally, in the embodiment of the present invention, respectively
Using Al2O3And SiO2As high refractive index and low-index material, the depositing Al first in ultraviolet fused quartz optical substrate2O3It is thin
Film controls the bias of electron beam evaporation electric current and plasma, and making its deposition rate, thickness is between 0.2nm/s-0.4nm/s
Between 80nm-120nm, which is measured using Lambda950 spectrophotometers respectively2O3Film penetrates spectrum and reflectance spectrum,
Al is parsed using multipole value model inversion2O3The optical constant of film, it is possible to find Al2O3The heterogeneity very little of film, you can
Al after to process optimization2O3Film is in the optical constant of deep ultraviolet band：It is in the refractive index of 200nm-260nm wavelength regions
Between 1.85-1.70, extinction coefficient ＜ 0.0025.
Later, SiO is deposited in ultraviolet sapphire optical substrate2Film, control electron beam evaporation electric current and plasma
Bias, makes its deposition rate between 0.2nm/s-0.4nm/s, and thickness is 150nm or so, using Lambda950 spectrophotometrics
Meter measures the SiO respectively2Film penetrates spectrum and reflectance spectrum, and SiO is parsed using multipole value model inversion2The optics of film
Constant, it is possible to find SiO2The heterogeneity very little of film, you can obtain SiO after process optimization2Film is in the optics of deep ultraviolet band
Constant：200nm-260nm wavelength regions refractive index between 1.52-1.58, extinction coefficient ＜ 0.0005.
Finally, in ultraviolet SiO2It is acquired according in step S104 using the technology after above-mentioned optimization in substrate
Every thin film actual deposition thickness, using plasma asistance electron beam deposition method alternating deposit Al2O3And SiO2Two kinds
High low-index film completes the preparation of deep ultraviolet band broadband beam splitting film.
It should be noted that Al2O3Film layer and SiO2The quantity of film layer and each layer of thickness are not construed as limiting, can basis
Depending on concrete condition,
By foregoing description it is found that a kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film provided by the invention
Effectively eliminate the heat generated due to plasma and electron beam evaporation material to crystal oscillator during plasma asistance electron beam deposition
The caused crystal oscillator sedimentation measurement error amount of disturbance, by being modified to the measurement error value and target deposition thickness, effectively
The spectrophotometric spectra performance of prepared deep ultraviolet band broadband beam splitting coating is improved, makes the measured spectra and reason of prepared sample
It reaches unanimity by design spectrum.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide range caused.
Claims (9)
1. a kind of preparation method of deep ultraviolet band broadband beam splitting pellicle film, which is characterized in that the preparation method includes：
Obtain the target deposition thickness of film layer in the deep ultraviolet band broadband beam splitting film；
According to the target deposition thickness, experiment deposition is carried out to the film layer；
After the completion of the film deposition, the measurement error value of the film layer is obtained；
According to the target deposition thickness and the measurement error value, the actual deposition thickness of the film layer is obtained；
According to the actual deposition thickness, the film layer is deposited.
2. preparation method according to claim 1, which is characterized in that it is described according to the target deposition thickness, to described
Film layer carries out experiment deposition and includes：
Using plasma asistance electron-beam evaporation technology, when the film deposition starts, advanced plasma source gear is opened
Plate and electron beam evaporation source baffle according to the target deposition thickness and based on predetermined angle incidence, carry out the film layer
Experiment deposition.
3. preparation method according to claim 2, which is characterized in that the predetermined angle is 0 degree.
4. preparation method according to claim 2, which is characterized in that it is described after the completion of the film deposition, obtain institute
The measurement error value for stating film layer includes：
After the completion of the film deposition, the advanced plasma source baffle and the electron beam evaporation source baffle are closed, is obtained
The measurement error value caused by thermal agitation between advanced plasma and electron beam evaporation material.
5. preparation method according to claim 4, which is characterized in that it is described according to the actual deposition thickness, to described
Film layer carries out deposition and includes：
One substrate is provided；
Using plasma asistance electron-beam evaporation technology, when each layer film deposition starts, open advanced grade from
Component baffle and electron beam evaporation source baffle, according to the actual deposition thickness of each layer film layer, on the substrate
It is deposited successively.
6. preparation method according to claim 5, which is characterized in that the substrate is SiO2Substrate.
7. preparation method according to claim 5, which is characterized in that the substrate is ultraviolet fused quartz optical substrate.
8. preparation method according to claim 7, which is characterized in that the vacuum degree ＜ of the ultraviolet fused quartz optical substrate
1×10-6mbar。
9. preparation method according to claim 7, which is characterized in that the warm temperature of the ultraviolet fused quartz optical substrate
Between 100 DEG C to 200 DEG C, including endpoint value.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111351442A (en) * | 2020-03-20 | 2020-06-30 | 歌尔股份有限公司 | Film thickness control method, device and equipment and computer readable storage medium |
| CN111623714A (en) * | 2019-02-27 | 2020-09-04 | 汉能移动能源控股集团有限公司 | Method for determining film thickness |
| CN112129235A (en) * | 2020-04-28 | 2020-12-25 | 北京环境特性研究所 | Method for rapidly obtaining thickness of transparent film without damage based on transmittance spectrum |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104297819A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Preparation method for low stress deep ultraviolet multilayer film |
| CN104979228A (en) * | 2014-04-11 | 2015-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film thickness control method and semiconductor processing device |
-
2017
- 2017-12-28 CN CN201711461422.9A patent/CN108169827B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979228A (en) * | 2014-04-11 | 2015-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film thickness control method and semiconductor processing device |
| CN104297819A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Preparation method for low stress deep ultraviolet multilayer film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111623714A (en) * | 2019-02-27 | 2020-09-04 | 汉能移动能源控股集团有限公司 | Method for determining film thickness |
| CN111351442A (en) * | 2020-03-20 | 2020-06-30 | 歌尔股份有限公司 | Film thickness control method, device and equipment and computer readable storage medium |
| CN112129235A (en) * | 2020-04-28 | 2020-12-25 | 北京环境特性研究所 | Method for rapidly obtaining thickness of transparent film without damage based on transmittance spectrum |
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| CN108169827B (en) | 2020-02-14 |
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