CN108138030A - For organic film chemical and mechanical grinding paste material composition and use its grinding method - Google Patents
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- CN108138030A CN108138030A CN201680057069.5A CN201680057069A CN108138030A CN 108138030 A CN108138030 A CN 108138030A CN 201680057069 A CN201680057069 A CN 201680057069A CN 108138030 A CN108138030 A CN 108138030A
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- organic film
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- paste material
- mechanical grinding
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- 238000000227 grinding Methods 0.000 title claims abstract description 73
- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 title claims abstract description 26
- 239000000126 substance Substances 0.000 title claims abstract description 23
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 37
- 230000001590 oxidative effect Effects 0.000 claims abstract description 19
- 239000007800 oxidant agent Substances 0.000 claims abstract description 15
- 239000003082 abrasive agent Substances 0.000 claims abstract description 12
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 150000000703 Cerium Chemical class 0.000 claims abstract description 9
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 5
- 239000012498 ultrapure water Substances 0.000 claims abstract description 5
- 230000002378 acidificating effect Effects 0.000 claims abstract description 4
- -1 cerium ion Chemical class 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 210000004379 membrane Anatomy 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 210000000713 mesentery Anatomy 0.000 claims description 7
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 6
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 6
- 239000008119 colloidal silica Substances 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims 1
- 229910052939 potassium sulfate Inorganic materials 0.000 claims 1
- 235000011151 potassium sulphates Nutrition 0.000 claims 1
- 239000002002 slurry Substances 0.000 description 44
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 9
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 8
- 229910002651 NO3 Inorganic materials 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000005518 electrochemistry Effects 0.000 description 6
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 235000013339 cereals Nutrition 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 2
- 235000019394 potassium persulphate Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- HXRVTZVVSGPFEC-BTJKTKAUSA-N (z)-but-2-enedioic acid;2,3-dihydroxybutanedioic acid Chemical compound OC(=O)\C=C/C(O)=O.OC(=O)C(O)C(O)C(O)=O HXRVTZVVSGPFEC-BTJKTKAUSA-N 0.000 description 1
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OVYQSRKFHNKIBM-UHFFFAOYSA-N butanedioic acid Chemical compound OC(=O)CCC(O)=O.OC(=O)CCC(O)=O OVYQSRKFHNKIBM-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- XVVLAOSRANDVDB-UHFFFAOYSA-N formic acid Chemical compound OC=O.OC=O XVVLAOSRANDVDB-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- YKEKYBOBVREARV-UHFFFAOYSA-N pentanedioic acid Chemical compound OC(=O)CCCC(O)=O.OC(=O)CCCC(O)=O YKEKYBOBVREARV-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- ZFACJPAPCXRZMQ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O.OC(=O)C1=CC=CC=C1C(O)=O ZFACJPAPCXRZMQ-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HJSRRUNWOFLQRG-UHFFFAOYSA-N propanedioic acid Chemical compound OC(=O)CC(O)=O.OC(=O)CC(O)=O HJSRRUNWOFLQRG-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention discloses a kind of chemical and mechanical grinding paste material composition for organic film and uses its grinding method.Chemical and mechanical grinding paste material composition includes the cerium salt and oxidant of ultra-pure water, abrasive material, the cerium ion containing tetravalence, wherein oxidant has 1.72 electron-volts or the oxidizing potential higher than 1.72 electron-volts in acidic region, and the pH value of chemical and mechanical grinding paste material composition is 1 to 7.Chemical and mechanical grinding paste material composition can pH value for 1 or higher than 1 under make tetravalence cerium ion (Ce4+) stablize and therefore can show the high grinding rate to organic film.Therefore, can organic film simply be removed by using the grinding method of chemical and mechanical grinding paste material composition, the organic film formed especially by autoregistration double patterning technology.
Description
Technical field
The present invention relates to it is a kind of for organic film chemical mechanical grinding (chemical mechanical polishing,
CMP) paste compound and use its grinding method.
Background technology
Recently, with the raising of the integration degree of semiconductor device and efficiency, the line width of interconnection pattern become it is narrower and
Interconnection pattern becomes multilayer.In order to improve for manufacture semiconductor device photoetching (photolithography) it is accurate
It spends, the flatness in each technique between each layer is most important.Currently, chemical mechanical grinding (CMP) technique is received for one kind and is looked steadily
Purpose planarization.CMP process can be classified into oxide (oxide) film CMP, metal according to the material to be ground
(metal) CMP, polysilicon (poly-Si) CMP, organic film CMP etc..
In CMP, it is known that grinding rate and flatness are influenced very big by the surfaction reaction for the film to be ground.To increase
Strong surfaction reaction, other than abrasive grains, CMP slurry can also include oxidant, polymer compound, inhibitor, chelating
Agent and the pH regulators such as acid or alkali.In view of grinding rate and flatness, when being intended to abrasive metal film or organic film, are suitble to make
With the strong oxidizer for including the transition metal such as such as Fe, Mn, Cr and Ce.However, in shallow trench isolation (shallow trench
Isolation, STI) technique or grid (gate) buried in technique, and Fe, Mn and Cr may cause leakage current (leakage
current).In addition, even if leakage current will not be caused, cerium (Ce) still has the following problems：Tetravalence cerium ion (Ce4+) in pH value be
1 or higher than 1 under become trivalent cerium ion (Ce3+), cause to be difficult to ensure that the stability of oxidant, and the grinding such as grinding rate
Characteristic is variable due to the concentration change of tetravalence cerium oxide ion.Although pulp solution pH value reduction can prevent quadrivalent cerium from
Son (Ce4+) become trivalent cerium ion (Ce3+), but this can cause it is rotten for adjusting the diamond disk of grinding pad or CMP tool
Erosion.Additionally, there are problems with：Once tetravalence cerium ion (Ce4+) become trivalent cerium ion (Ce3+), this trivalent cerium ion just without
Method is back to tetravalence cerium ion (Ce by simply reducing the pH value of pulp solution4+).Even if therefore, it is necessary to one kind in pH value
For 1 or higher than 1 under can still make tetravalence cerium ion (Ce4+) stablize slurry composition for CMP.
Invention content
Technical problem
Even if one embodiment of the present of invention be to provide it is a kind of pH value for 1 or higher than 1 under can still make tetravalence cerium ion
(Ce4+) stablize slurry composition for CMP.
Another embodiment of the present invention is to provide a kind of CMP slurry that can provide organic film excellent grinding effect and combines
Object.
The CMP slurry that one more embodiment of the present invention is to provide a kind of use and has excellent grinding effect to organic film combines
Object grinds the method for organic film.
Technical solution
One embodiment of the present of invention relates to a kind of slurry composition for CMP for organic film, the combination of this CMP slurry
Object includes：Ultra-pure water, abrasive material, the cerium ion containing tetravalence cerium salt and oxidant, wherein this oxidant in acidic region have 1.72
Electron-volt or the oxidizing potential higher than 1.72 electron-volts, and the pH value of this slurry composition for CMP is 1 to 7.
The cerium salt of the above-mentioned cerium ion containing tetravalence is there are trivalent cerium ion and tetravalence cerium ion, and the concentration of tetravalence cerium ion can
It is ten times of trivalent cerium ion concentration or ten times or more.
Above-mentioned oxidant may include at least one of hydrogen peroxide, potassium peroxydisulfate, sodium peroxydisulfate and ammonium persulfate.
Above-mentioned abrasive material can be present in slurry composition for CMP, and can have with the amount of 0.1 weight % (wt%) to 20 weight %
There is the colloidal silica that average grain diameter is 10 nanometers to 100 nanometers.
Above-mentioned organic film can be the carbon mesentery containing carbon-hydrogen link.
Above-mentioned carbon mesentery can be C-SOH films, amorphous carbon layer (amorphous carbon layer, ACL) or NCP films.
Above-mentioned slurry composition for CMP can be also comprising at least one of pH regulators and organic acid.
Above-mentioned slurry composition for CMP can have 1,000 angstrom mins or the grinding higher than 1,000 angstrom mins for organic film
Rate.
Another embodiment of the present invention relates to a kind of organic film grinding method, and the above method includes：Use is with above-mentioned
Slurry composition for CMP grind organic film.
Above-mentioned organic film grinding method may include：The inoranic membrane with depiction is formed on the base layer；It is inorganic herein
Organic film is formed on the surface of film, to fill depiction；And the non-shape using slurry composition for CMP and above the inoranic membrane
Organic film is removed into the surface for having depiction.
Above-mentioned organic film can be to pass through autoregistration double patterning technology (self-aligned double patterning
technology：SaDPT the resist film) formed.
The advantageous effect of the present invention
According to the present invention, a kind of slurry composition for CMP can be provided, though pH value for 1 or higher than 1 under still can be steadily
Maintain tetravalence cerium ion (Ce4+) concentration, excellent grinding effect is thereby showed to organic film.
According to the present invention, it is possible to provide a kind of grinding method by using with above-mentioned slurry composition for CMP comes simply
Remove organic film, the organic film formed especially by autoregistration double patterning technology.
Specific embodiment
Hereinafter, it will be apparent from the embodiment of the present invention.
For the slurry composition for CMP of organic film
First, the slurry composition for CMP according to the present invention for organic film will be illustrated.
Slurry composition for CMP according to the present invention for organic film can pH value for 1 or higher than 1 under make tetravalence cerium ion
(Ce4+) stablize, and can organic film selectively be ground with high grinding rate.
In one embodiment, for the slurry composition for CMP of organic film may include ultra-pure water, abrasive material, containing quadrivalent cerium from
The cerium salt and oxidant of son.
Slurry composition for CMP is used to grind organic film.Organic film is the carbon mesentery containing carbon-hydrogen link, such as C- spin coatings are hard
Shade (C-spin-on hard mask, C-SOH) film, amorphous carbon layer (amorphous carbon layer, ACL) or NCP
Film.Specifically, C-SOH films are preferably as grinding object, it is because slurry composition for CMP has excellent grinding to C-SOH films
Selectivity.
Term " C-SOH films " used herein means to can be used as the carbon mesentery of resist, such as double by autoregistration jointly
Weight patterning techniques (self-aligned double patterning technology：SaDPT the resist) formed
Film, for filling the gap filling film (gap-filling) of the through hole of inoranic membrane (such as the oxygen being deposited on patterned wafer
SiClx film) and etch-stop films, but C-SOH films are often referred to carbon system hard mask film.
It can be used selected from least one of silica, aluminium oxide, cerium oxide (ceria) and titanium oxide (titania) gold
Belong to oxide as abrasive material.Specifically, silica is advantageously used for CMP process, it is because silica offer fine dispersion is steady
It is qualitative and lead to less scratch.In one embodiment, abrasive material can be colloidal silica.Colloidal silica can have about 10 to receive
The average grain diameter that 100 nanometers of meter Zhi Yue.Within this range, enough grinding rates can be obtained.
Abrasive material can about 0.1 weight % to about 20 weight %, the preferably amount of about 0.1 weight % to about 15 weight % be present in
In slurry composition for CMP.If the amount of abrasive material is more than range above, produced there may be dispersion stabilization deterioration, during grinding
The problems such as raw scratch, oxide erosion (oxide erosion).However, if the amount of abrasive material is less than range above, it is difficult to obtain
The required grinding rate of semiconductor processes.
The cerium salt of the cerium ion containing tetravalence can be for example ammonium ceric nitrate.
Ammonium ceric nitrate (Ceric Ammonium Nitrate) is for equably grinding organic film material, to expose example
The surface roughness (roughness) of pattern is improved during such as silicon oxide layer grinding stop layer (stop layer), while with oxygen
Compound or ion aoxidize the superficial layer of organic film to promote to remove the superficial layer of organic film.In addition, ammonium ceric nitrate causes exist
It can be easily removed in the residue (Residue) for grinding the organic film material in stop layer, thereby reach more uniform grind
Mill.
Ammonium ceric nitrate can be present in the form of ionic compound or chelate in paste compound.More than ammonium ceric nitrate
Form is stated in use, high grinding rate can be obtained for organic film.In one embodiment, ammonium ceric nitrate can be used as cation
Ammonium ion (NH4 +) and [Ce (NO as anion3)6]2-Form be present in paste compound, as represented by formula 1：
[formula 1]
Ammonium ceric nitrate can about 0.01 weight % to about 5 weight %, preferably about 0.05 weight % to about 3 weight % and then
The amount of more preferably about 0.1 weight % to about 3 weight % are present in paste compound.Within this range, can by organic film can
Etching is maintained at appropriate level.
Oxidant is the change for having in acidic region about 1.72 electron-volts or the oxidizing potential higher than 1.72 electron-volts
Object is closed, and may include such as hydrogen peroxide, potassium peroxydisulfate, sodium peroxydisulfate, ammonium persulfate.Those compounds can be used alone or
It is used as its mixture.When the cerium salt of the cerium ion containing tetravalence is present in as independent ion in CMP slurry solution, oxidation
Agent is used to prevent tetravalence cerium ion (Ce4+) it is reduced to trivalent cerium ion (Ce3+), thereby assuring that the stability of tetravalence cerium ion and changing
The good abrasive characteristic such as grinding rate.
Paste compound according to the present invention can also inhibit the grinding rate to inoranic membrane comprising organic acid.Organic acid can
Comprising selected from least one of the group being made up of carboxylic acid：Malic acid (malic acid), citric acid (citric
Acid), formic acid (formic acid), glutaric acid (glutaric acid), oxalic acid (oxalic acid), phthalic acid
(phthalic acid), succinic acid (succinic acid), tartaric acid (maleic acid), maleic acid (stop layer)
And malonic acid (malonic acid).
In view of the dispersion stabilization of grinding rate, slurry and the surface characteristics of grinding object, organic acid can about 0.02 weight
Measure % to about 0.1 weight %, the amount of preferably about 0.05 weight % to about 0.1 weight % are present in slurry composition for CMP.
The pH value of slurry composition for CMP according to the present invention about 1 to about 7, preferably about 1 to less than about 3.CMP slurry combines
Object can also include pH regulators, to adjust the pH value of this composition within the above range.Can be used potassium hydroxide, sodium hydroxide,
Ammonium hydroxide etc. is used as pH regulators.When the pH value of slurry composition for CMP meets range above, can further improve to organic film
Abrasive characteristic.
Slurry composition for CMP for organic film can have about 1,000 angstrom mins or higher than 1,000 angstrom mins, preferably about
2,000 angstrom mins or the grinding rate higher than 2,000 angstrom mins.
Use the grinding method of the slurry composition for CMP for organic film
Next, it will illustrate a kind of method for grinding organic film according to an embodiment of the invention.
The method of grinding organic film according to an embodiment of the invention includes：Organic film is used for using above-described
Slurry composition for CMP grind organic film.Herein, organic film can be to be formed on the surface of the inoranic membrane with depiction
Film.
In one embodiment, the method may include：The inoranic membrane with depiction is formed on the base layer；Inorganic
Organic film is formed on the surface of film, so that organic film is filled in depiction；And use the CMP slurry for organic film
Composition and surface that depiction is not formed above inoranic membrane removes organic film.
Herein, organic film can be the carbon mesentery containing carbon-hydrogen (C-H) key, and inoranic membrane can be that metal layer or metal aoxidize
Nitride layer.
In one embodiment, organic film can be C-SOH films, and inoranic membrane can be silicon oxide film.
In another embodiment, organic film can be to pass through autoregistration double patterning technology (self-aligned double
patterning technology：SaDPT the resist film) formed.
Grinding organic film may include：Slurry composition for CMP is applied to spin finishing pad and grinding pad is made to contact organic film
Surface, partly grind organic film by padding friction surface under the conditions of predetermined pressure.Herein, predetermined pressure condition packet
Include the usual applicable pressure condition in CMP technique field.
Invention pattern
Then, the present invention will be explained in more detail with reference to certain examples.It is only used for it should be understood that providing those examples
It is bright, and be understood not to limit the invention in any way.It can be provided by following instance a kind of available for flattening phase transformation
The CMP method of material.
Example
Example 1
The formation of organic film：On the surface thereof 5000 angstroms of thick silica are deposited on the patterned wafer with depiction
Film as grinding terminate film, then, on the surface of silica formed 2650 angstroms thick SOH films (Samsung (Samsung) SDI) with
Fill depiction.Herein, SOH films are by being toasted to be formed at 400 DEG C.
Slurry composition for CMP：By amount (with the total weight of slurry composition for CMP, weight %) listed in table 1,
Following components is mixed with ultra-pure water to prepare slurry composition for CMP.
SOH films are to be ground under following grinding condition using prepared slurry composition for CMP.
Grinding condition：Using H800 CMP pads (Fujiette Co., Ltd (FUJIBO Co., Ltd.s)) as grinding pad.
The compression pressure of 1.0 pound/square inch (psi), the slurry flow rate of 200 ml/mins, 90 revs/min of workbench (table)
(MIRRA) grinder is drawn (to apply material using 200 millimeters of rice under conditions of speed and 90 revs/min of mandrel (spindle) speed
Expect (Applied Materials；AMAT) Co., Ltd) it is ground 1 minute to perform, then measure grinding rate.As a result it is shown in
In table 1.
Example 2 is to example 5 and comparative example 1 to comparative example 6
Organic film is formed under the same conditions as in example 1, and prepares CMP slurry using component listed in table 1
Then composition grinds the organic film in a manner of identical with example 1.Then, grinding rate is measured.As a result it is shown in table
In 1.
The detailed content of the component of slurry composition for CMP
(A) abrasive material：Using average grain diameter be 35 nanometers colloidal silica (Evonik Ltd. (EVONIC Co.,
Ltd.))。
(B) containing Ce4+The cerium salt of ion：Use ammonium ceric nitrate (three electrochemistry Co., Ltd (Samchun Chemical
Co., Ltd.)).
(C) oxidant
(c1) hydrogen peroxide：Using hydrogen peroxide (Dong You precision chemicals Co., Ltd (Dongwoo Fine-Chem Co.,
Ltd.), oxidizing potential：1.77 electron-volt).
(c2) nitric acid：Use nitric acid (three electrochemistry Co., Ltds (Samchun Chemical Co., Ltd.s), oxidation electricity
Position：0.80 electron-volt).
(c3) perchlorate：Using perchlorate (three electrochemistry Co., Ltds (Samchun Chemical Co.,
Ltd.), oxidizing potential：0.17 electron-volt).
(c4) hydrochloric acid：Use hydrochloric acid (three electrochemistry Co., Ltds (Samchun Chemical Co., Ltd.s), oxidation electricity
Position：0.00 electron-volt).
(c5) boric acid：Use boric acid (three electrochemistry Co., Ltds (Samchun Chemical Co., Ltd.s), oxidation electricity
Position：0.48 electron-volt).
(D) pH regulators：Using potassium hydroxide (three electrochemistry Co., Ltds (Samchun Chemical Co.,
Ltd.))。
[table 1]
As shown in table 1, it has proven convenient that being showed according to the slurry composition for CMP of (example 1 to example 5) of the invention to organic film
Go out higher grinding rate, and with 10: the 1 or Ce higher than 10: 14+To Ce3+Concentration ratio, therefore can ensure tetravalence cerium ion
Stability.
On the contrary, the slurry composition for CMP to contain no oxidizing agent of comparative example 1 shows organic film lower grinding speed
Rate, and with lower Ce4+To Ce3+Concentration ratio, therefore quadrivalent cerium can not be made ion stabilized, and comparative example 2 is to comparative example 5
Slurry composition for CMP lower grinding rate is shown to organic film and quadrivalent cerium can not be made ion stabilized.
Furthermore, it has been established that there is comparative example 6 slurry composition for CMP of the pH value less than 1 lower grind is shown to organic film
Grind rate.
It should be understood that under conditions of without departing substantially from spirit and scope of the present invention, those skilled in the art can make various profits
Decorations, change, change and equivalent embodiment.
Claims (11)
1. a kind of chemical and mechanical grinding paste material composition for organic film, which is characterized in that include：
Ultra-pure water, abrasive material, the cerium ion containing tetravalence cerium salt and oxidant,
Wherein described oxidant has 1.72 electron-volts or the oxidizing potential higher than 1.72 electron-volts, and institute in acidic region
The pH value for stating chemical and mechanical grinding paste material composition is 1 to 7.
2. chemical and mechanical grinding paste material composition according to claim 1, wherein the cerium salt of the cerium ion containing tetravalence is deposited
Be in the concentration of trivalent cerium ion and tetravalence cerium ion, and the tetravalence cerium ion ten times of the concentration of the trivalent cerium ion or
Ten times or more.
3. chemical and mechanical grinding paste material composition according to claim 1, wherein the oxidant includes hydrogen peroxide, mistake
At least one of potassium sulfate, sodium peroxydisulfate and ammonium persulfate.
4. chemical and mechanical grinding paste material composition according to claim 1, wherein the abrasive material is with 0.1 weight % to 20 weights
The amount of amount % is present in the chemical and mechanical grinding paste material composition, and is 10 nanometers to 100 nanometers with average grain diameter
Colloidal silica.
5. chemical and mechanical grinding paste material composition according to claim 1, wherein the organic film is containing carbon-hydrogen link
Carbon mesentery.
6. chemical and mechanical grinding paste material composition according to claim 5, wherein the carbon mesentery is C- spin coating hard masks
Film, amorphous carbon layer (amorphous carbon layer) or NCP films.
7. chemical and mechanical grinding paste material composition according to claim 1, also comprising in pH regulators and organic acid extremely
Few one.
8. chemical and mechanical grinding paste material composition according to claim 1, wherein the chemical and mechanical grinding paste material combines
Object has 1,000 angstrom mins or the grinding rate higher than 1,000 angstrom mins for the organic film.
9. a kind of organic film grinding method, which is characterized in that including：
Organic film is ground using chemical and mechanical grinding paste material composition according to any one of claim 1 to 8.
10. organic film grinding method according to claim 9, including：
The inoranic membrane with depiction is formed on the base layer；
The organic film is formed on the surface of the inoranic membrane, to fill the depiction；And
The depiction is not formed from above the inoranic membrane using the chemical and mechanical grinding paste material composition
Surface removes the organic film.
11. organic film grinding method according to claim 9, wherein the organic film is by autoregistration double patterning
Technology (self-aligned double patterning technology：SaDPT the resist film) formed.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150139394A KR101882561B1 (en) | 2015-10-02 | 2015-10-02 | Cmp slurry composition for organic film and polishing method using the same |
| KR10-2015-0139394 | 2015-10-02 | ||
| PCT/KR2016/010874 WO2017057906A1 (en) | 2015-10-02 | 2016-09-29 | Cmp slurry composition for polishing organic film and polishing method using same |
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| CN108138030A true CN108138030A (en) | 2018-06-08 |
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| Country | Link |
|---|---|
| KR (1) | KR101882561B1 (en) |
| CN (1) | CN108138030A (en) |
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| WO2021084706A1 (en) * | 2019-10-31 | 2021-05-06 | 昭和電工マテリアルズ株式会社 | Polishing solution, polishing method, and semiconductor component manufacturing method |
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| KR20210079573A (en) * | 2019-12-20 | 2021-06-30 | 주식회사 케이씨텍 | Slurry composition for organic film |
| KR20240061362A (en) * | 2022-10-31 | 2024-05-08 | 주식회사 케이씨텍 | Polishing slurry composition |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1556840A (en) * | 2001-09-24 | 2004-12-22 | Rare earth salt oxidizer based CMP method | |
| CN101026086A (en) * | 2006-02-24 | 2007-08-29 | 海力士半导体有限公司 | Method for forming fine pattern of semiconductor device |
| CN101206403A (en) * | 2006-12-19 | 2008-06-25 | 第一毛织株式会社 | Photosensitive resin composition and organic insulating film produced using the same |
| KR20110013291A (en) * | 2009-07-30 | 2011-02-09 | 주식회사 동진쎄미켐 | Photoresist composition for forming self-aligned double pattern |
| KR20140125316A (en) * | 2013-04-17 | 2014-10-28 | 제일모직주식회사 | Cmp slurry composition for organic film and polishing method using the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| KR101279969B1 (en) * | 2008-12-31 | 2013-07-05 | 제일모직주식회사 | CMP slurry composition for polishing metal wiring and polishing method using the same |
| KR101279970B1 (en) * | 2008-12-31 | 2013-07-05 | 제일모직주식회사 | CMP slurry composition for polishing metal wiring |
| KR20150009914A (en) * | 2013-07-17 | 2015-01-27 | 삼성전자주식회사 | CMP composition for polishing an organic layer and method of forming a semiconductor device using the composition |
-
2015
- 2015-10-02 KR KR1020150139394A patent/KR101882561B1/en active IP Right Grant
-
2016
- 2016-09-29 WO PCT/KR2016/010874 patent/WO2017057906A1/en active Application Filing
- 2016-09-29 CN CN201680057069.5A patent/CN108138030A/en active Pending
- 2016-09-30 TW TW105131438A patent/TWI621673B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1556840A (en) * | 2001-09-24 | 2004-12-22 | Rare earth salt oxidizer based CMP method | |
| CN101026086A (en) * | 2006-02-24 | 2007-08-29 | 海力士半导体有限公司 | Method for forming fine pattern of semiconductor device |
| CN101206403A (en) * | 2006-12-19 | 2008-06-25 | 第一毛织株式会社 | Photosensitive resin composition and organic insulating film produced using the same |
| KR20110013291A (en) * | 2009-07-30 | 2011-02-09 | 주식회사 동진쎄미켐 | Photoresist composition for forming self-aligned double pattern |
| KR20140125316A (en) * | 2013-04-17 | 2014-10-28 | 제일모직주식회사 | Cmp slurry composition for organic film and polishing method using the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021084706A1 (en) * | 2019-10-31 | 2021-05-06 | 昭和電工マテリアルズ株式会社 | Polishing solution, polishing method, and semiconductor component manufacturing method |
| JPWO2021084706A1 (en) * | 2019-10-31 | 2021-05-06 | ||
| JP7210823B2 (en) | 2019-10-31 | 2023-01-24 | 株式会社レゾナック | Polishing liquid, polishing method and method for manufacturing semiconductor parts |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI621673B (en) | 2018-04-21 |
| KR101882561B1 (en) | 2018-07-26 |
| KR20170040036A (en) | 2017-04-12 |
| TW201714994A (en) | 2017-05-01 |
| WO2017057906A1 (en) | 2017-04-06 |
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