CN108133886A - A kind of method of DBC substrate backs grinding - Google Patents

A kind of method of DBC substrate backs grinding Download PDF

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Publication number
CN108133886A
CN108133886A CN201711306894.7A CN201711306894A CN108133886A CN 108133886 A CN108133886 A CN 108133886A CN 201711306894 A CN201711306894 A CN 201711306894A CN 108133886 A CN108133886 A CN 108133886A
Authority
CN
China
Prior art keywords
brush roll
grinding
dbc substrate
backs
dbc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711306894.7A
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Chinese (zh)
Inventor
周轶靓
贺贤汉
戴洪兴
孔德举
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai fulewa Semiconductor Technology Co., Ltd
Original Assignee
Shanghai Shenhe Thermo Magnetics Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Shenhe Thermo Magnetics Electronics Co Ltd filed Critical Shanghai Shenhe Thermo Magnetics Electronics Co Ltd
Priority to CN201711306894.7A priority Critical patent/CN108133886A/en
Publication of CN108133886A publication Critical patent/CN108133886A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The present invention is bad to solve the problems, such as that double-sided copper-clad ceramic base plate surface is uneven, increase mechanical milling tech before thermal dispersant coatings technique is applied, by the way that unlike material brush roll is selected to combine, a kind of method of DBC substrate backs grinding is provided, DBC substrate back copper faces are ground and polished, achieve the purpose that flatten substrate back.

Description

A kind of method of DBC substrate backs grinding
Technical field
The invention belongs to DBC substrate manufactures fields, and in particular to a kind of method of DBC substrate backs grinding.
Background technology
When double-sided copper-clad ceramic substrate (DBC substrates) is for power device package, in its first device of positive (circuit surface) welding Part, and the back side (radiating surface) is welded with copper soleplate, and the heat diffusion of generation is gone out.Due to DBC substrates and copper soleplate thermal expansion Coefficient is different, and large-area welding leads to solder joint fatigue, and power device thermal cycling capability is caused to decline.To improve thermal cycling capability, Gradually thermal dispersant coatings, the technique being directly bonded on radiator are applied in DBC substrate backs now during encapsulation using a kind of.But This packaging technology is more demanding to DBC substrate back surface state:Surface need to be smooth, and nothing is uneven, plate face warpage is small. See Fig. 1.
By copper sheet and ceramics, sintering forms DBC substrates at high temperature, and because of high-temperature substrates, to generate warpage bad, simultaneously Generating sintering bubble sometimes at copper sheet and Ceramic bond face causes copper sheet raised, these are bad to cause plate face uneven.Due to Thermal dispersant coatings are very thin, can not fill up the gap not between platen surface and radiator so that DBC substrate backs cannot be complete with radiator Full fitting, causes the heat generated not spread in time, device easily fails.
Existing DBC substrate manufactures industry mainly realizes DBC substrate surface process by using chemical solvent, this process Oxide on surface can only be removed, is unable to reach the purpose of flattened faces.
Invention content
The present invention is bad to solve the problems, such as that DBC substrate surfaces are uneven, and scheme is increases before thermal dispersant coatings technique is applied Add mechanical milling tech, by the way that unlike material brush roll is selected to combine, a kind of method of DBC substrate backs grinding is provided, to DBC bases Back copper face is ground and polishes, and achievees the purpose that flatten DBC substrate backs.
The technical scheme is that:A kind of method of DBC substrate backs grinding, applied to apply thermal dispersant coatings technique it Before, it is as follows:
Step 1: setting hard brush roll one, substrate back first grinds primary through hard brush roll;
(1) hard brush roll speed is set as 1.0~2.0m/min;
(2) control of back side copper face amount of grinding is in the range of 10um~30um;
(3) hard brush roll mesh number:400~900#;Electric current:0.4~0.9A;
Step 2: setting soft brush roll three, substrate back is polished three times again through soft brush roll;
(1) soft brush roll speed is set as 1.0~2.0m/min;
(2) soft brush roll mesh number:200~600#;Electric current:0.6~1.2A;
(3) roughness control is in Ra after polishing<2、Rz<In the range of 16.
Further, in step 1, hard brush roll speed is set as 1.5m/min.
Further, in step 2, soft brush roll speed is set as 1.5m/min.
Further, in step 1, hard brush roll mesh number:600#.
Further, in step 2, soft brush roll mesh number:300#.
The beneficial effects of the invention are as follows:Back side copper face is ground with hard brush roll, by controlling copper face amount of grinding, is come real It now reduces plate face warpage degree and reduces the purpose of the copper sheet protrusion caused by being sintered bubble.With soft brush roll to the back side copper that has ground Face is polished.Improve appearance and keep certain roughness.
Description of the drawings
When Fig. 1 is used for power device package for DBC substrates, in its positive (circuit surface) welding component, and the back side applies and dissipates Hot coating, the structure diagram being directly bonded on radiator.
In figure:1 is welding component, and 2 be substrate front side, and 3 be ceramics, and 4 be radiator, and 5 be thermal dispersant coatings, and 6 be substrate The back side.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings
The present invention is solves the problems, such as that the influence that is uneven of DBC substrate backs is bonded with radiator, by increasing mechanical grinding Grinding process, to achieve the purpose that flatten DBC substrate backs.
It is as follows:
Step 1: setting hard brush roll one, substrate back first grinds primary through hard brush roll;
(1) hard brush roll speed is set as 1.0~2.0m/min;
(2) control of back side copper face amount of grinding is in the range of 10um~30um;
(3) hard brush roll mesh number:400~900#;Electric current:0.4~0.9A;
Step 2: setting soft brush roll three, substrate back is polished three times again through soft brush roll;
(1) soft brush roll speed is set as 1.0~2.0m/min;
(2) soft brush roll mesh number:200~600#;Electric current:0.6~1.2A;
(3) roughness control is in Ra after polishing<2、Rz<In the range of 16.
By inventing implementation above, can be uneven DBC substrate backs leveling, and when encapsulation is bonded completely with radiator, The heat that power device generates can be spread out in time.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should It is considered as protection scope of the present invention.

Claims (5)

1. a kind of method of DBC substrate backs grinding, before painting thermal dispersant coatings technique, it is characterised in that:Specific steps It is as follows:
Step 1: setting hard brush roll one, substrate back first grinds primary through hard brush roll;
(1) hard brush roll speed is set as 1.0~2.0m/min;
(2) control of back side copper face amount of grinding is in the range of 10um~30um;
(3) hard brush roll mesh number:400~900#;Electric current:0.4~0.9A;
Step 2: setting soft brush roll three, substrate back is polished three times again through soft brush roll;
(1) soft brush roll speed is set as 1.0~2.0m/min;
(2) soft brush roll mesh number:200~600#;Electric current:0.6~1.2A;
(3) roughness control is in Ra after polishing<2、Rz<In the range of 16.
2. a kind of method of DBC substrate backs grinding according to claim 1, it is characterised in that:In step 1, hard brush roll Speed is set as 1.5m/min.
3. a kind of method of DBC substrate backs grinding according to claim 1, it is characterised in that:In step 2, soft brush roll Speed is set as 1.5m/min.
4. a kind of method of DBC substrate backs grinding according to claim 1, it is characterised in that:In step 1, hard brush roll Mesh number:600#.
5. a kind of method of DBC substrate backs grinding according to claim 1, it is characterised in that:In step 2, soft brush roll Mesh number:300#.
CN201711306894.7A 2017-12-11 2017-12-11 A kind of method of DBC substrate backs grinding Pending CN108133886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711306894.7A CN108133886A (en) 2017-12-11 2017-12-11 A kind of method of DBC substrate backs grinding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711306894.7A CN108133886A (en) 2017-12-11 2017-12-11 A kind of method of DBC substrate backs grinding

Publications (1)

Publication Number Publication Date
CN108133886A true CN108133886A (en) 2018-06-08

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Family Applications (1)

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CN201711306894.7A Pending CN108133886A (en) 2017-12-11 2017-12-11 A kind of method of DBC substrate backs grinding

Country Status (1)

Country Link
CN (1) CN108133886A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113224008A (en) * 2021-03-17 2021-08-06 江苏富乐德半导体科技有限公司 Method for reducing poor wrinkle and pimple of DCB product
CN113453437A (en) * 2021-06-22 2021-09-28 江苏富乐德半导体科技有限公司 Method for treating surface defects of copper-clad ceramic substrate

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1163318A (en) * 1996-01-16 1997-10-29 三井金属矿业株式会社 Electrolytic copper foil for printed circuit board and its producing method
CN1880061A (en) * 2005-06-13 2006-12-20 新日铁化学株式会社 Copper cladded laminates and its production method
CN101662893A (en) * 2009-09-04 2010-03-03 东莞美维电路有限公司 Manufacturing method for printed wiring board with dense disk holes
CN101716744A (en) * 2009-11-12 2010-06-02 梅州博敏电子有限公司 Board surface leveling method of loop-free blind hole high-density interconnection printing circuit board
CN101764121A (en) * 2010-01-08 2010-06-30 湖南大学 Interlayer insulated stacked composite material and preparation method thereof
CN104072186A (en) * 2013-03-27 2014-10-01 比亚迪股份有限公司 A preparing method of a ceramic copper-clad plate
CN104412720A (en) * 2012-05-02 2015-03-11 陶瓷技术有限责任公司 Method for producing ceramic circuit boards from ceramic substrates having metal-filled vias
CN104538313A (en) * 2014-12-23 2015-04-22 南京航空航天大学 Method for filling through hole of aluminum oxide ceramic substrate with copper
CN105845582A (en) * 2016-04-28 2016-08-10 东莞市凯昶德电子科技股份有限公司 Preparation method of ceramic substrate used for IGBT packaging
CN106413273A (en) * 2016-11-01 2017-02-15 江门崇达电路技术有限公司 Board surface copper particle improving process
CN106535506A (en) * 2016-12-15 2017-03-22 泰和电路科技(惠州)有限公司 Via hole filling method, welding pad manufacturing method, welding pad and circuit board
CN106658977A (en) * 2015-10-29 2017-05-10 碁鼎科技秦皇岛有限公司 Line production method of circuit board and circuit board produced by using method

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1163318A (en) * 1996-01-16 1997-10-29 三井金属矿业株式会社 Electrolytic copper foil for printed circuit board and its producing method
CN1880061A (en) * 2005-06-13 2006-12-20 新日铁化学株式会社 Copper cladded laminates and its production method
CN101662893A (en) * 2009-09-04 2010-03-03 东莞美维电路有限公司 Manufacturing method for printed wiring board with dense disk holes
CN101716744A (en) * 2009-11-12 2010-06-02 梅州博敏电子有限公司 Board surface leveling method of loop-free blind hole high-density interconnection printing circuit board
CN101764121A (en) * 2010-01-08 2010-06-30 湖南大学 Interlayer insulated stacked composite material and preparation method thereof
CN104412720A (en) * 2012-05-02 2015-03-11 陶瓷技术有限责任公司 Method for producing ceramic circuit boards from ceramic substrates having metal-filled vias
CN104072186A (en) * 2013-03-27 2014-10-01 比亚迪股份有限公司 A preparing method of a ceramic copper-clad plate
CN104538313A (en) * 2014-12-23 2015-04-22 南京航空航天大学 Method for filling through hole of aluminum oxide ceramic substrate with copper
CN106658977A (en) * 2015-10-29 2017-05-10 碁鼎科技秦皇岛有限公司 Line production method of circuit board and circuit board produced by using method
CN105845582A (en) * 2016-04-28 2016-08-10 东莞市凯昶德电子科技股份有限公司 Preparation method of ceramic substrate used for IGBT packaging
CN106413273A (en) * 2016-11-01 2017-02-15 江门崇达电路技术有限公司 Board surface copper particle improving process
CN106535506A (en) * 2016-12-15 2017-03-22 泰和电路科技(惠州)有限公司 Via hole filling method, welding pad manufacturing method, welding pad and circuit board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113224008A (en) * 2021-03-17 2021-08-06 江苏富乐德半导体科技有限公司 Method for reducing poor wrinkle and pimple of DCB product
CN113453437A (en) * 2021-06-22 2021-09-28 江苏富乐德半导体科技有限公司 Method for treating surface defects of copper-clad ceramic substrate

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Effective date of registration: 20201120

Address after: Building 3, 181 Shanlian Road, Baoshan District, Shanghai, 200444

Applicant after: Shanghai fulewa Semiconductor Technology Co., Ltd

Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181

Applicant before: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd.

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20180608