CN2884527Y - Precision ceramic packed hot pressing head for making COG - Google Patents
Precision ceramic packed hot pressing head for making COG Download PDFInfo
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- CN2884527Y CN2884527Y CN 200520037719 CN200520037719U CN2884527Y CN 2884527 Y CN2884527 Y CN 2884527Y CN 200520037719 CN200520037719 CN 200520037719 CN 200520037719 U CN200520037719 U CN 200520037719U CN 2884527 Y CN2884527 Y CN 2884527Y
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- thermal head
- ceramics
- silicon nitride
- processing procedure
- cog
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Abstract
The utility model provides a precision ceramic enclosure heat press which is made of aluminum nitride or silicon nitride ceramic. The utility model is characterized with high precision, long life, low cost, extensive application temperature scope, no static electricity, no residual ACF colloid and finishing.
Description
Technical field
The utility model provides a kind of chip applying glass (Chip On Glass; COG) processing procedure is meant especially that with encapsulation thermal head (bonding head or bonding tools) a kind of COG processing procedure with ceramic making encapsulates thermal head with high technology ceramics.
Background technology
Traditional COG processing procedure has two classes with the material that the encapsulation thermal head uses, and a class is that thermal head integral body is after heat treatment reprocessed by Ferrious material or special steel material and is made, and another kind of is with chemical vapour deposition technique (Chemical Vapor Deposition; CVD) diamond film is deposited on the ready metal seat stand.Using metal material to make the reason of thermal head or its seat stand, be because temperature must be increased to fast about 160-300 ℃ in the pressing process, and metal is hot good conductor and stable in properties, and mechanical strength can be provided again, also applies machining easily.Yet the whole thermal head of being made by Ferrious material or special steel material but has unavoidable shortcoming.The Ferrious material thermal head is easy to generate the softening transform of pressed surface because at high temperature use for a long time, and then the yield that causes drive integrated circult (Drive IC) to engage with LCD (LCD) panel descends.Long-time and the peripheral part friction of Liquid Crystal Module (LCM) the meeting generation static of Ferrious material thermal head, the static of accumulation causes the circuit of drive IC and LCD panel by electrostatic breakdown easily, causes drive IC to engage failure with the LCD panel.Because the thermal coefficient of expansion of metal material itself is big, the Ferrious material thermal head is in the process of heating, and the flatness of its pressed surface and flatness can't long term maintenance be stablized, and then the yield that causes drive IC to engage with the LCD panel reduces.At high temperature, Ferrious material thermal head easy deformation, and resistance to wear is not good, its surface can't the long term maintenance polishing condition, easy residual anisotropy conducting film (Anisotropic Conductive Film; ACF) colloid.
The hardness ratio metal height of diamond, diamond is also more high temperature resistant than metal.Yet, because diamond film is different with the thermal coefficient of expansion of its below metal seat stand, when heating, can produce bimetallic effect, the big meeting of thermal coefficient of expansion is to the little side's flexural deformation of thermal coefficient of expansion, so the diamond film thermal head must grind and processed the diamond layer under specific temperature, therefore the diamond film thermal head also can only use under this specified temp, just can avoid because the distortion that the thermal coefficient of expansion difference is caused, make the flatness of diamond film pressed surface and the requirement that flatness reaches the production precision, produce the stable drive IC and the joint action of LCD panel.But so, a diamond film thermal head just can't be applicable to all COG process temperatures, when using various temperature to change on a production line or the equipment to produce, can't use same diamond film thermal head, a plurality of same sizes must be prepared but the diamond film thermal head of suitable different operating temperature, cause cost to improve, and the processing procedure time lengthening.In addition and since the diamond film thermal head be with CVD deposition diamond film on the pressed surface of metal seat stand, under the temperature of user's appointment, carry out attrition process again, so the cost of manufacture of diamond film thermal head is high and be difficult for being implemented on large-area pressed surface.If large-area drive IC, has in the making of thermal head itself the actual difficulty as the tool of production with the diamond film thermal head, more need spend high cost of manufacture, do not meet economic benefit.Another shortcoming of diamond film thermal head is that the diamond layer on it peels off because of the long-term cold and hot temperature difference or bump easily.When the diamond layer on the diamond film thermal head peels off, can't redress thermal head is reused, and also can't carry out the change of diamond layer size or polishing again for spendable diamond film thermal head still, form the waste of resource.In addition, the long-time friction with LCM periphery part of diamond layer also can produce static, and the static of accumulation causes the circuit of drive IC and LCD panel by electrostatic breakdown easily, causes drive IC to engage failure with the LCD panel, causes the decline of yield.
Therefore, need to develop a kind of low cost of manufacture, long service life, the Applicable temperature scope is wide and the pressing yield is high COG processing procedure in this area with the encapsulation thermal head.
Summary of the invention
The COG processing procedure that the purpose of this utility model is to provide a kind of can reduce manufacturing cost, increase the service life, the Applicable temperature scope is wide and the pressing yield is high is with encapsulating thermal head.
For achieving the above object, it is the COG processing procedure encapsulation thermal head of main material with aluminium nitride or silicon nitride ceramics that the utility model provides a kind of.
Particularly, the utility model provides a kind of COG processing procedure to encapsulate thermal head with high technology ceramics, comprises a seat stand, is formed with a pressed surface on it, and this thermal head is to be main material with aluminium nitride ceramics, silicon nitride ceramics or its hybrid ceramic.
COG processing procedure of the present utility model encapsulates thermal head with high technology ceramics, when can effectively reducing production costs, its pressed surface can reach the approaching or higher life-span with the diamond film thermal head, and can bear wearing and tearing, the bump and withstand voltage of long-term use, solving conventional iron is that metal fever pressure head and diamond film thermal head produce the problem that distortion, burr and diamond pull-up fall to causing for a long time under high-temperature operation, and goes for the COG processing procedure under the different temperatures.Have long service life, Applicable temperature scope wide, pressing yield height and the advantage that reduces manufacturing cost.
Description of drawings
Fig. 1 is according to the schematic diagram of a COG processing procedure of the present utility model with high technology ceramics encapsulation thermal head;
Fig. 2 is according to the schematic diagram of another COG processing procedure of the present utility model with high technology ceramics encapsulation thermal head.
Main symbol description among the figure:
The 100COG processing procedure encapsulates thermal head 110 pressed surfaces with high technology ceramics
122 heater holes, 120 heater holes, 130 thermometer holes, 140 fixing holes
142 fixing holes, 144 fixing holes, 146 fixing holes, 148 fixing holes
Embodiment
Fig. 1 is the schematic diagram of an embodiment of the present utility model, COG processing procedure is to be that main material is made with aluminium nitride or silicon nitride ceramics with high technology ceramics encapsulation thermal head 100, has a pressed surface 110 on it, be to have the flatness that reaches the production required precision and the mirror finish plane of flatness, the seat stand of one heater hole, 120 penetration heat pressure heads 100, and near pressed surface 110, for putting into heater, one thermometer hole 130 gos deep into the seat stand of thermal head 100, and near heater hole 120, for putting into temperature measuring equipment, thermocouple for example, and a plurality of fixing holes 140,142,144,146,148 penetrate the seat stand of thermal head 100, so that thermal head 100 is fixed on the board.
As shown in Figure 2, COG processing procedure of the present utility model can be made into different profiles according to different boards with high technology ceramics encapsulation thermal head 100, it comprises a pressed surface 110, be to have the flatness that reaches the production required precision and the mirror finish plane of flatness, the seat stand of heater hole 120 and 122 penetration heat pressure heads 100, and near pressed surface 110, for putting into heater, one thermometer hole 130 gos deep into the seat stand of thermal head 100, and between heater hole 120 and 122, to put into temperature measuring equipment, for example thermocouple, and several fixing holes 140,142,144,146,148 so that be fixed in thermal head 100 on the board.
In one embodiment, thermal head 100 is to be main material with the aluminium nitride ceramics, and aluminium nitride ceramics is a Main Ingredients and Appearance with the aluminium nitride when sintering, and for example aluminium nitride accounts for 80% of composition, and other ceramic material accounts for 20% of composition.Aluminium nitride ceramics can comprise the isomer of aluminium nitride, for example AlN and Al
3N
2
In another embodiment, thermal head 100 is to be main material with the silicon nitride ceramics, and silicon nitride ceramics is a Main Ingredients and Appearance with the silicon nitride when sintering, and for example silicon nitride accounts for 60% of composition, and other ceramic material accounts for 40% of composition.Silicon nitride ceramics can comprise the isomer of silicon nitride.
In another embodiment, thermal head 100 is to be main material with aluminium nitride and silicon nitride ceramics, and the ceramic material of mixing is a Main Ingredients and Appearance with aluminium nitride and silicon nitride when sintering, and for example aluminium nitride accounts for 40% of composition, silicon nitride accounts for 40% of composition, and other ceramic material accounts for 20% of composition.Aluminium nitride and silicon nitride ceramics also can comprise its isomer separately.
Because the hardness height (near the hardness of diamond) of aluminium nitride and silicon nitride ceramics, therefore the thermal head made from aluminium nitride or silicon nitride ceramics 100, its pressed surface 110 can reach the approaching or higher life-span with the diamond film thermal head, and can bear wearing and tearing, the bump and withstand voltage of long-term use, solving conventional iron is that metal fever pressure head and diamond film thermal head produce the problem that distortion, burr and diamond pull-up fall to causing for a long time under high-temperature operation.The conductive coefficient height of aluminium nitride and silicon nitride ceramics, thermal coefficient of expansion be little, for the superior isolation body of electricity and have stable chemical and physical properties, can provide thermal head 100 to carry out the operation of rapid intensification and cooling, and can not cause the distortion of pressed surface 110, precision and yield that influence is produced, can not produce static because of friction yet, cause circuit to be caused engaging failure, therefore when producing, need not to install additional the influence that Destaticizing device can effectively reduce static by electrostatic breakdown.
The utility model utilizes aluminium nitride or silicon nitride ceramics to make thermal head 100, utilize the characteristic that its resistance to wear is good and can polish, pressed surface 110 is done mirror finish to be handled, but pressed surface 110 long term maintenance mirror status, when pressing, the ACF colloid can't remain on the pressed surface 110, can effectively solve the problem of cull.Because thermal head 100 whole materials of the present utility model are identical, can not produce bimetallic effect when therefore heating, from room temperature to 800 ℃, pressed surface 110 all keeps identical flatness and flatness, goes for the COG processing procedure under the different temperatures.
The thermal head made from aluminium nitride or silicon nitride ceramics 100 of the present utility model, all be lower than the diamond film thermal head at material price and processing cost, and easily be implemented on large-area pressed surface 110, therefore, no matter be used in the drive IC pressing of large-area drive IC pressing or small size, its cost of manufacture is roughly suitable, can effectively reduce production costs.More particularly, the pressed surface 110 of thermal head 100 can keep in repair or revise the processed of size, makes thermal head 100 be applicable to different IC sizes.
The utility model is used the main material of encapsulation thermal head 100 as the COG processing procedure with aluminium nitride or silicon nitride ceramics, can be made into the thermal head 100 of different types according to user's demand, getting rid of conventional iron is the shortcoming of metal fever pressure head and diamond film thermal head, reaches long service life, Applicable temperature scope wide, pressing yield height and the purpose that reduces manufacturing cost.
According to the utility model,, be not that every kind of material all is fit to make thermal head though the material category of high technology ceramics is various.With alundum (Al (Al
2O
3) pottery is example, though its hardness and aluminium nitride or silicon nitride ceramics are similar, it also is the excellent electric insulation body, but its conductive coefficient has only the 1/10-1/5 of aluminium nitride or silicon nitride ceramics, the operating temperature that heat-conducting effect missionary society causes heating effectively and uses or can't reach the COG processing procedure effectively, nor cooling easily.Moreover the thermal coefficient of expansion of alundum (Al pottery is aluminium nitride or silicon nitride ceramics 4-5 a times, easily produce when heating up rapidly or lowering the temperature and break, so the alundum (Al pottery is not suitable for the material as thermal head.Zirconia (ZrO for example again
2) pottery, though its hardness ratio aluminium nitride or silicon nitride ceramics height, conductive coefficient and thermal coefficient of expansion and alundum (Al pottery are similar, cause when transient heating surpasses 300 ℃ and break, so zirconia ceramics also is not suitable for the material as thermal head.Be example with carborundum (SiC) pottery again, though physical characteristics such as its hardness, thermal conductivity and thermal coefficient of expansion are all good than aluminium nitride or silicon nitride ceramics, silicon carbide ceramics can conduct electricity, and insulation effect is poor, in addition, the hardness height of silicon carbide ceramics is difficult for processing, even arrives the degree that can't process, and carborundum costs an arm and a leg, if with the material of silicon carbide ceramics as thermal head, its cost is higher than the diamond film thermal head, can't reduce cost.In sum, the utility model is not to choose the ceramic material thermal head arbitrarily, and its practical new principle is valid.
Claims (7)
1. a COG processing procedure encapsulates thermal head with high technology ceramics, it is characterized in that: comprise a seat stand, be formed with a pressed surface on it, and this thermal head is to be main material with the aluminium nitride ceramics.
2. COG processing procedure as claimed in claim 1 encapsulates thermal head with high technology ceramics, it is characterized in that: described aluminium nitride ceramics comprises the isomer of aluminium nitride.
3. a COG processing procedure encapsulates thermal head with high technology ceramics, it is characterized in that: comprise a seat stand, be formed with a pressed surface on it, and this thermal head is to be main material with the silicon nitride ceramics.
4. COG processing procedure as claimed in claim 3 encapsulates thermal head with high technology ceramics, it is characterized in that: described silicon nitride ceramics comprises the isomer of silicon nitride.
5. a COG processing procedure encapsulates thermal head with high technology ceramics, it is characterized in that: comprise a seat stand, be formed with a pressed surface on it, and this thermal head is to be main material with mixed nitride aluminium and silicon nitride ceramics.
6. COG processing procedure as claimed in claim 5 encapsulates thermal head with high technology ceramics, it is characterized in that: described aluminium nitride ceramics comprises the isomer of aluminium nitride.
7. COG processing procedure as claimed in claim 5 encapsulates thermal head with high technology ceramics, it is characterized in that: described silicon nitride ceramics comprises the isomer of silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520037719 CN2884527Y (en) | 2005-12-28 | 2005-12-28 | Precision ceramic packed hot pressing head for making COG |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200520037719 CN2884527Y (en) | 2005-12-28 | 2005-12-28 | Precision ceramic packed hot pressing head for making COG |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2884527Y true CN2884527Y (en) | 2007-03-28 |
Family
ID=37957580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200520037719 Expired - Fee Related CN2884527Y (en) | 2005-12-28 | 2005-12-28 | Precision ceramic packed hot pressing head for making COG |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2884527Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101352936B (en) * | 2007-07-26 | 2011-07-06 | 环旭电子股份有限公司 | Heat pressing head |
| CN103434180A (en) * | 2013-08-18 | 2013-12-11 | 深圳市鑫三力自动化设备有限公司 | Novel packaging hot-pressing head device |
| CN104516130A (en) * | 2014-12-18 | 2015-04-15 | 福建华冠光电有限公司 | OEC (optical to electrical connection) device ACF (active carbon fiber) multi-section attached and sectional ACF pressure head and use method thereof |
| CN110246782A (en) * | 2019-05-29 | 2019-09-17 | 鋐源光电科技（厦门）有限公司 | A kind of hot pressing syncephalon of COF encapsulation and preparation method thereof |
-
2005
- 2005-12-28 CN CN 200520037719 patent/CN2884527Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101352936B (en) * | 2007-07-26 | 2011-07-06 | 环旭电子股份有限公司 | Heat pressing head |
| CN103434180A (en) * | 2013-08-18 | 2013-12-11 | 深圳市鑫三力自动化设备有限公司 | Novel packaging hot-pressing head device |
| CN104516130A (en) * | 2014-12-18 | 2015-04-15 | 福建华冠光电有限公司 | OEC (optical to electrical connection) device ACF (active carbon fiber) multi-section attached and sectional ACF pressure head and use method thereof |
| CN104516130B (en) * | 2014-12-18 | 2017-06-20 | 福建华冠光电有限公司 | OEC device A CF multisection types attach segmented ACF pressure heads and its application method |
| CN110246782A (en) * | 2019-05-29 | 2019-09-17 | 鋐源光电科技（厦门）有限公司 | A kind of hot pressing syncephalon of COF encapsulation and preparation method thereof |
| CN110246782B (en) * | 2019-05-29 | 2021-09-14 | 鋐源光电科技（厦门）有限公司 | Thermal bonding head for COF packaging and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070328 Termination date: 20131228 |