CN108130511A - Mask plate and its manufacturing method, the method to piezo jets progress plated electrode - Google Patents
Mask plate and its manufacturing method, the method to piezo jets progress plated electrode Download PDFInfo
- Publication number
- CN108130511A CN108130511A CN201711393282.6A CN201711393282A CN108130511A CN 108130511 A CN108130511 A CN 108130511A CN 201711393282 A CN201711393282 A CN 201711393282A CN 108130511 A CN108130511 A CN 108130511A
- Authority
- CN
- China
- Prior art keywords
- mask plate
- nozzle
- hole
- electrode
- plated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 19
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000010025 steaming Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims description 2
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Abstract
Disclose a kind of mask plate and its manufacturing method, the method to piezo jets progress plated electrode.Wherein, the mask plate runs through in the thickness direction thereof is equipped with multiple through-holes, gap of the mask plate when in use positioned at the top of the nozzle of array arrangement and between the through-hole and the nozzle is corresponding, the thickness of the mask plate is in gradually smaller trend on first direction far from evaporation source and vertical with being used for the surface of plated electrode on the nozzle, so that the electrode length that the evaporation source is plated to each nozzle wall through multiple through-holes on the mask plate is consistent.
Description
Technical field
The present invention relates to art of physical vapor deposition, and in particular to a kind of mask plate and its manufacturing method, to piezo jets
The method for carrying out plated electrode.
Background technology
As shown in Figure 1, in the prior art, a kind of half electrode piezo jet nozzle includes piezo jets 10 and from the piezoelectricity
Multiple nozzles 12 that nozzle 10 extends along the vertical direction of the extending direction with the piezo jets 10, are formed with spray in nozzle
Hole, so as to which liquid can be sprayed from multiple nozzles 12.It is often necessary to divide on be away from each other two surfaces of each nozzle 12
It Du not top electrode 14.By taking vacuum evaporation as an example, table of the evaporation source 2 to provide metal material and to project each nozzle 12
Face, however, because evaporation source 2 is beaten in a linear fashion in vacuum equipment to nozzle for point source and metallic, due to side wall
The effect of blocking, cause the length difference of metal electrode plated on the surface of each nozzle 12 excessive, so as to influence to piezoelectricity
The control of nozzle.Meanwhile need to carry out gluing photoetching process on top side wall surface before plated electrode, to remove top side wall table
The electrode in face prevents nozzle wall both sides electrode conduction, and technique is cumbersome, and cost is higher.
Invention content
For above-mentioned technical problem, the present invention proposes a kind of mask plate and its manufacturing method, piezo jets is carried out with plating electricity
The method of pole.
Technical solution is as follows：
A kind of mask plate, for carrying out plated electrode to piezo jet nozzle, the piezo jet nozzle includes array arrangement
Multiple nozzles, the mask plate in the thickness direction thereof run through be equipped with multiple through-holes, the mask plate when in use be located at battle array
It arranges the top of the nozzle of arrangement and gap between the through-hole and the nozzle is correspondings, the thickness of the mask plate is far from steaming
It is in gradually smaller trend on first direction rising and vertical with being used for the surface of plated electrode on the nozzle.
Optionally, the evaporation source is plated to the electrode length of each nozzle wall through multiple through-holes on the mask plate
Unanimously.
Optionally, between the width of the through-hole and the nozzle gap equivalent width.
Optionally, the mask plate is made of silicon material.
Optionally, the rectangular shape of the opening of the through-hole.
A kind of manufacturing method of mask plate includes：
Silicon substrate is ground, obtains the mask plate for meeting preset dimension requirement, the thickness of the mask plate is far from steaming
It is in gradually smaller trend on first direction rising and vertical with being used for the surface of plated electrode on the nozzle；
The profile for being used for etching through hole is formed on the surface of the mask plate using photoetching process；
The profile is etched by multiple through-holes using etching technics.
Optionally, the photoetching process includes SU-8 photoresist process.
Optionally, the etching technics includes deep reaction ion etching technique.
A kind of method that piezo jets are carried out with plated electrode, including：
The good mask plate of pre-production is placed in the top of the nozzle for the piezo jets for treating plated electrode, and by the mask
Through-hole on plate is corresponding with the gap between the nozzle；
The piezo jets for placing the mask plate are put into evaporated device, and ensure the thickness of the mask plate remote
From evaporation source and with being used on the vertical first direction in surface of plated electrode be in gradually smaller trend on the nozzle；
The evaporation source of the evaporated device is opened, opens the evaporation source of the evaporated device and through on the mask plate
Electrode material is plated to each nozzle wall by multiple through-holes.
Effect caused by the technical solution that the embodiment of the present invention is provided includes：
It is long in the electrode that each nozzle wall of piezo jets is plated that the prior art can be improved by the mask plate
The problem of degree difference is excessive, and the photoetching process in traditional plated electrode technique is eliminated, save cost.
It should be understood that above general description and following detailed description are only exemplary and explanatory, not
This specification embodiment can be limited.
In addition, any embodiment in this specification embodiment does not need to reach above-mentioned whole effects.
Description of the drawings
In order to illustrate more clearly of this specification embodiment or technical solution of the prior art, below will to embodiment or
Attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
Some embodiments described in this specification embodiment, for those of ordinary skill in the art, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is a kind of principle schematic of the plated electrode in piezo jets of the prior art；
Fig. 2 is a kind of principle schematic of the plated electrode in piezo jets provided in an embodiment of the present invention；
Fig. 3 is a kind of flow of the manufacturing method of mask plate provided in an embodiment of the present invention；
Structure diagrams of the Fig. 4 for the mask plate before a kind of grinding provided in an embodiment of the present invention and after grinding；
Fig. 5 A are a kind of structure diagram for etching the mask plate completed provided in an embodiment of the present invention；
Fig. 5 B are the vertical view of mask plate in Fig. 5 A.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, provide these implementations
Example is in order to explain the principle of the present invention and its practical application, so as to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
Such as Fig. 2, in an embodiment of the present invention, a kind of mask plate in ramped shaped of pre-production, defining first direction is
Direction with the perpendicular that plated electrode 14 is used on nozzle 12, and the first direction is far from evaporation source 2.This
On one direction, the thickness of mask plate is in gradually smaller trend.By the way that the mask plate of this shape is placed on 12 array of nozzle
Top so that evaporation source 2 is consistent in the electrode length that each 12 surface of nozzle is plated.Wherein, usual nozzle battle array
The nozzle hole number of row is more than 128, and the modes such as vapor deposition or sputtering plating may be used and carry out plated electrode.Wherein, metal electrode can be Al,
The electrodes such as Ni, Cu.
A kind of method for manufacturing the mask plate is introduced below with reference to Fig. 3~Fig. 5 B, this method includes following step
Rapid S1~S3, wherein：
S1：Silicon substrate 3 is ground, obtains the mask plate 4 for meeting preset dimension requirement.Wherein, before the grinding may be used
Silicon substrate 3 is placed into a ramp member 5, so as to which the mask plate 4 of required size requirement be ground along the dotted line in figure.
S2：Using photoetching process, (surface 41 is away from the side of the piezo jets on the surface 41 of the mask plate 4
Surface, and loading end 42 is may be defined as towards a side surface of the piezo jets) on form the profile for etching through hole 43.
Optionally, the photoetching process can be SU-8 photoresist process.
S3：The profile is etched by multiple through-holes 43 using etching technics.Optionally, which can be deep anti-
Answer ion etching (Deep Reactive Ion Etching, DRIE) technique.
As can be seen that mask plate runs through in the thickness direction thereof is equipped with multiple through-holes 43 from Fig. 5 B, optionally, these are logical
The opening in hole 43 can be with rectangular shape, so as to be deposited into required shape on nozzle 12 through these through-holes 43 conducive to metal material
Electrode.
Preferably, between the width of the through-hole 43 and the nozzle 12 gap equivalent width, consequently facilitating placing
Through-hole 43 and the gap are aligned one by one during the mask plate, certainly, width is inconsistent to be realized.
Preferably, the mask plate is made of silicon material, and the described mask plate can repeatedly use, and be convenient for
Cleaning is attached to the electrode material on the mask plate.
In an embodiment of the present invention, a kind of method that piezo jets are carried out with plated electrode is also provided, including：
S10：The good mask plate 4 of pre-production is placed in the top of the nozzle 12 for the piezo jets for treating plated electrode, and will
Through-hole 41 on the mask plate 4 is corresponding with the gap between the nozzle.Preferably, the second surface 42 and the nozzle
12 top can be fixed by adhesive or be gripped by micro-displacement platform alignment, and fixed form is simultaneously unlimited
System.
S20：The piezo jets for placing the mask plate 4 are put into evaporated device, and ensure the thickness of the mask plate 4
It spends on far from evaporation source 2 and with the upper perpendicular for plated electrode of the nozzle 12 first direction in gradually change
Small trend.
S30：The evaporation source 2 of the evaporated device is opened, so that the evaporation source 2 is through multiple on the mask plate 4
The electrode length that through-hole 41 is plated to each 12 surface of nozzle is consistent.
It should be noted that in other feasible embodiments, the evaporation source 2 is through multiple logical on the mask plate 4
The electrode length that hole 41 is plated to each 12 surface of nozzle can not also be completely the same, can slightly deviation, it is on the whole, of the invention
Scheme compared with the prior art, can limit the length difference between the electrode for reducing and being plated in jet array.
As it can be seen that in above scheme provided by the invention, the prior art can be improved in piezo jets by the mask plate
The electrode length difference that is plated of each nozzle wall it is excessive the problem of, and eliminate the photoetching work in traditional plated electrode technique
Skill has saved cost.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Point just to refer each other, and the highlights of each of the examples are difference from other examples.Especially for device reality
For applying example, since it is substantially similar to embodiment of the method, so describing fairly simple, related part is referring to embodiment of the method
Part explanation.The apparatus embodiments described above are merely exemplary, wherein described be used as separating component explanation
Module may or may not be it is physically separate, can be each module when implementing this specification embodiment scheme
Function realize in the same or multiple software and or hardware.Can also select according to the actual needs part therein or
Person's whole module realizes the purpose of this embodiment scheme.Those of ordinary skill in the art are in situation about not making the creative labor
Under, you can to understand and implement.
The above is only the specific embodiment of this specification embodiment, it is noted that for the general of the art
For logical technical staff, under the premise of this specification embodiment principle is not departed from, several improvements and modifications can also be made, this
A little improvements and modifications also should be regarded as the protection domain of this specification embodiment.
Claims (10)
1. a kind of mask plate, for carrying out plated electrode to piezo jet nozzle, the piezo jet nozzle includes array arrangement
Multiple nozzles, which is characterized in that the mask plate runs through in the thickness direction thereof is equipped with multiple through-holes, and the mask plate is using
When positioned at array arrangement nozzle top and gap between the through-hole and the nozzle it is corresponding, the thickness of the mask plate
It is in gradually smaller trend on first direction far from evaporation source and vertical with being used for the surface of plated electrode on the nozzle.
2. mask plate according to claim 1, which is characterized in that the evaporation source is through each logical on the mask plate
The electrode length that hole is plated to each nozzle wall is consistent.
3. mask plate according to claim 1, which is characterized in that gap between the width of the through-hole and the nozzle
Equivalent width.
4. mask plate according to claim 1, which is characterized in that the mask plate is made of silicon material, the through-hole
The rectangular shape of opening.
5. a kind of manufacturing method of mask plate, which is characterized in that including：
Silicon substrate is ground, obtains the mask plate for meeting preset dimension requirement, the thickness of the mask plate is far from evaporation source
And with being used on the vertical first direction in surface of plated electrode be in gradually smaller trend on the nozzle；
The profile for being used for etching through hole is formed on the surface of the mask plate using photoetching process；
The profile is etched by multiple through-holes using etching technics.
6. the according to the method described in claim 5, it is characterized in that, rectangular shape of the opening of the through-hole.
7. according to the method described in claim 5, it is characterized in that, the photoetching process includes SU-8 photoresist process.
8. according to the method described in claim 5, it is characterized in that, the etching technics includes deep reaction ion etching technique.
A kind of 9. method that piezo jets are carried out with plated electrode, which is characterized in that including：
The good mask plate of pre-production is placed in the top of the nozzle for the piezo jets for treating plated electrode, and will be on the mask plate
Through-hole it is corresponding with the gap between the nozzle；
The piezo jets for placing the mask plate are put into evaporated device, and ensure the thickness of the mask plate far from steaming
It is in gradually smaller trend on first direction rising and vertical with being used for the surface of plated electrode on the nozzle；
It opens the evaporation source of the evaporated device and electrode material is plated to each spray through each through-hole on the mask plate
Mouth side wall.
10. according to the method described in claim 9, it is characterized in that, the evaporation source is through multiple logical on the mask plate
The electrode length that hole is plated to each nozzle wall is consistent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711393282.6A CN108130511B (en) | 2017-12-21 | 2017-12-21 | Mask plate and manufacturing method thereof, and method for plating electrode on piezoelectric spray head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711393282.6A CN108130511B (en) | 2017-12-21 | 2017-12-21 | Mask plate and manufacturing method thereof, and method for plating electrode on piezoelectric spray head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108130511A true CN108130511A (en) | 2018-06-08 |
| CN108130511B CN108130511B (en) | 2024-04-30 |
Family
ID=62391153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711393282.6A Active CN108130511B (en) | 2017-12-21 | 2017-12-21 | Mask plate and manufacturing method thereof, and method for plating electrode on piezoelectric spray head |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108130511B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0854201A1 (en) * | 1997-01-20 | 1998-07-22 | Coherent Optics Europe Limited | Three-dimensional masking method for control of optical coating thickness |
| US5993904A (en) * | 1997-01-20 | 1999-11-30 | Coherent, Inc. | Three-dimensional masking method for control of coating thickness |
| US20160126507A1 (en) * | 2014-10-31 | 2016-05-05 | Samsung Display Co., Ltd. | Mask frame assembly, method of manufacturing the same, and method of manufacturing organic light-emitting display apparatus |
| CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
| CN207659516U (en) * | 2017-12-21 | 2018-07-27 | 苏州英捷飞微机电有限公司 | Mask plate for carrying out plated electrode to piezo jet nozzle |
-
2017
- 2017-12-21 CN CN201711393282.6A patent/CN108130511B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0854201A1 (en) * | 1997-01-20 | 1998-07-22 | Coherent Optics Europe Limited | Three-dimensional masking method for control of optical coating thickness |
| US5993904A (en) * | 1997-01-20 | 1999-11-30 | Coherent, Inc. | Three-dimensional masking method for control of coating thickness |
| US20160126507A1 (en) * | 2014-10-31 | 2016-05-05 | Samsung Display Co., Ltd. | Mask frame assembly, method of manufacturing the same, and method of manufacturing organic light-emitting display apparatus |
| CN106381464A (en) * | 2015-07-28 | 2017-02-08 | 昆山国显光电有限公司 | General metal mask plate and manufacturing method thereof |
| CN207659516U (en) * | 2017-12-21 | 2018-07-27 | 苏州英捷飞微机电有限公司 | Mask plate for carrying out plated electrode to piezo jet nozzle |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108130511B (en) | 2024-04-30 |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20201218 Address after: Room 104, building m3, No.2, Peiyuan Road, hi tech city, Suzhou City, Jiangsu Province Applicant after: Suzhou Jiaying Technology Co.,Ltd. Address before: Room 1246, building 2, Fenghua Commercial Plaza, Mudu Town, Wuzhong District, Suzhou City, Jiangsu Province Applicant before: SUZHOU YINGJIEFEI MICROELECTROMECHNICAL Co.,Ltd. |
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