CN108123364A - A kind of semicondcutor laser unit - Google Patents
A kind of semicondcutor laser unit Download PDFInfo
- Publication number
- CN108123364A CN108123364A CN201711462506.4A CN201711462506A CN108123364A CN 108123364 A CN108123364 A CN 108123364A CN 201711462506 A CN201711462506 A CN 201711462506A CN 108123364 A CN108123364 A CN 108123364A
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- laser
- temperature
- power supply
- semicondcutor
- preset
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Abstract
The embodiment of the invention discloses a kind of semicondcutor laser unit, including：Multiple lasers, the laser have been internally integrated temperature sensor, for gathering the temperature of the laser；Multiple adjustable power supplys of output current, the power supply is corresponded with the laser, for providing drive signal for its corresponding laser；With the controller of multiple power electric connections, the controller is used to generate control signal when the temperature that the temperature sensor collects meets preset condition, the control signal is exported for reducing the power supply to the drive signal of the laser, to improve the stability of the semicondcutor laser unit on the premise of the semiconductor laser dress stable output power is kept, extend the service life of the semicondcutor laser unit.
Description
Technical field
Laser technology field of the present invention more particularly to a kind of semicondcutor laser unit.
Background technology
As high power semiconductor lasers are gradually widened in the application range of light industrial processes and military field, people couple
The performance requirement of high power semiconductor lasers is higher and higher, does not require nothing more than high-power half semiconductor laser with high-power
Output, will also take into account stability and durability simultaneously.But high power semiconductor lasers usually have multiple semiconductor lasers
Composition, and had differences between each semiconductor laser, so when multiple lasers work at the same time, the temperature of each laser
Difference so as to cause the laser ageing speed that temperature is excessively high, influences the stability and service life of high power laser.
The content of the invention
In order to solve the above technical problems, an embodiment of the present invention provides a kind of semicondcutor laser unit, it is high-power to improve
The stability and service life of semicondcutor laser unit.
To solve the above problems, an embodiment of the present invention provides following technical solutions：
A kind of semicondcutor laser unit, including：
Multiple lasers, the laser have been internally integrated temperature sensor, for gathering the temperature of the laser；
Multiple adjustable power supplys of output current, the power supply and the laser correspond, for corresponding swashing for its
Light device provides drive signal；
With the controller of multiple power electric connections, the temperature that the controller is used to collect in the temperature sensor expires
Control signal is generated during sufficient preset condition, the control signal is exported for reducing the power supply to the driving letter of the laser
Number.
Optionally, the controller is used for when the temperature of the laser meets the first preset condition, the first control of generation
Signal processed, the first control signal are used to that the power supply to be controlled to reduce drive signal of the output to the laser.
Optionally, first preset condition includes：
The duration that the temperature of the laser is more than the first preset temperature value is more than the first preset time.
Optionally, first preset condition includes：
The duration that the temperature of the laser is more than the first preset temperature is more than the first preset time, and the laser
Increasing degree of the temperature of device in the second preset time is less than the second preset temperature value.
Optionally, the controller is additionally operable to increasing degree of the temperature in the second preset time in the laser not
During less than the second preset temperature value, second control signal is generated, the second control signal is for controlling the power supply stopping
Its corresponding described laser output drive signal.
Optionally, further include：
Display, for showing the abnormality of the laser, the abnormality of the laser includes the laser
The temperature of device meets the state of preset condition.
Optionally, the display is additionally operable to send when the temperature that the temperature sensor collects meets preset condition
Information warning, the information warning are used to inform the abnormality of laser described in user.
Optionally, the temperature sensor is used to gather the temperature of the laser in real time；The temperature sensor uses
MAX31725 temperature sensors.
Optionally, the power supply is programmable power supply, for adjusting drive signal of the output to the laser in real time.
Optionally, the programmable power supply is programmable digital DC power supply, and the rated voltage of the programmable power supply is 260V,
Rated current is 12A, rated power 200W, degree of regulation 0-1%, and including right end point value, adjusting stability is 0-1%,
Including right end point value.
Compared with prior art, above-mentioned technical proposal has the following advantages：
The technical solution that the embodiment of the present invention is provided, each laser correspond to a power supply, and the output of the power supply
Current adjustment so as to be gathered the temperature of its place laser using the temperature sensor, and is exported to the controller,
Using the controller when the temperature that the temperature sensor collects meets preset condition, reduce the corresponding electricity of the laser
Source is exported to the drive signal of the laser, and then reduces the output power of the laser, to reach the temperature for reducing the laser
The purpose of degree so that the operating temperature of each laser is essentially identical in the semicondcutor laser unit and maintains normal range (NR)
It is interior, it solves since single laser temperature is excessively high in existing semicondcutor laser unit, aging speed is very fast, influences the semiconductor
The problem of stability and service life of laser aid, reduces the incidence of the failure of the semicondcutor laser unit, increases institute
The durability of semicondcutor laser unit is stated, to improve institute on the premise of the semiconductor laser dress stable output power is kept
The stability of semicondcutor laser unit is stated, extends the service life of the semicondcutor laser unit.
Moreover, the semicondcutor laser unit that the embodiment of the present invention is provided, in the output work of the laser to operation irregularity
It is that single laser is adjusted when rate is adjusted, the overall output power of entire semicondcutor laser unit is influenced not
Greatly, and the number of lasers that includes of the semicondcutor laser unit is more, this to influence smaller, improves the semiconductor laser
The stability of device.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
The structure diagram for the semicondcutor laser unit that Fig. 1 is provided by one embodiment of the invention.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
Implemented using other different from other manner described here, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is from the limitation of following public specific embodiment.
Just as described in the background section, high power semiconductor lasers are usually made of multiple semiconductor lasers, and
It is had differences between each semiconductor laser, so when multiple lasers work at the same time, the temperature of each laser is different, meeting
Cause the laser ageing speed that temperature is excessively high, influence the stability and service life of high power laser.
Inventor is the study found that this is because each laser works long hours in current high power semiconductor laser unit
When, individual lasers temperature is high so that the laser works long hours at high temperature, accelerated ageing, and service life is significantly
Reduce, cause the failure rate of high-power laser device increase, so as to influence the service life of high power semiconductor laser unit with
Stability.
In view of this, an embodiment of the present invention provides a kind of semicondcutor laser unit, as shown in Figure 1, the semiconductor laser
Device includes：
Multiple lasers 10, the laser 10 have been internally integrated temperature sensor, for gathering the laser 10
Temperature；
Multiple adjustable power supplys 20 of output current, the power supply 20 are corresponded with the laser 10, for for its is right
The laser 10 answered provides drive signal；
The controller 30 being electrically connected with the power supply 20, the controller 30 are used for what is collected in the temperature sensor
Temperature generates control signal when meeting preset condition, the control signal is exported for reducing the power supply 20 to the laser
10 drive signal.Optionally, the controller 30 is MCU (i.e. Micro Controller Unit, miniature control unit),
But the present invention does not limit this, specifically depends on the circumstances.
It should be noted that in embodiments of the present invention, the multiple laser 10 includes at least two lasers, below
By taking the semicondcutor laser unit includes four lasers as an example, to the semicondcutor laser unit that the embodiment of the present invention is provided into
Row description, but the present invention does not limit this, specifically depends on the circumstances.
It should also be noted that, in embodiments of the present invention, the controller 30 is additionally operable to adopt in the temperature sensor
The temperature collected does not adjust the power supply 20 when meeting not preset condition and exports to the drive signal of the laser 10, that is, controls
The power supply 20 maintains currently to export to the drive signal of the laser 10.Optionally, the drive signal is driving current,
But the present invention does not limit this, specifically depends on the circumstances.
In the semicondcutor laser unit that the embodiment of the present invention is provided, each laser 10 corresponds to a power supply 20, and institute
State that the output current of power supply 20 is adjustable, so as to the temperature of laser 10 where gathering it using the temperature sensor, and
It exports to the controller 30, meets preset condition in the temperature that the temperature sensor collects using the controller 30
When, reduce the 10 corresponding power supply 20 of laser and export to the drive signal of the laser 10, and then reduce the laser 10
Output power, to achieve the purpose that reduce the temperature of the laser 10 so that each laser 10 in the semicondcutor laser unit
Operating temperature it is essentially identical and be maintained within normal range, solve in existing semicondcutor laser unit due to single laser 10
Temperature is excessively high, and aging speed is very fast, the problem of influencing the stability and service life of the semicondcutor laser unit, to keep
The stability of the semicondcutor laser unit is improved on the premise of the semiconductor laser dress stable output power, described in extension
The service life of semicondcutor laser unit.
On the basis of above-described embodiment, in one embodiment of the invention, the temperature sensor for sensitivity compared with
High temperature sensor, to gather the temperature of the laser 10 in real time, optionally, in the specific embodiment of the present invention
In, the temperature sensor uses MAX31725 temperature sensors, to realize the temperature of laser 10 described in high precision collecting, but
The present invention does not limit this, specifically depends on the circumstances.Wherein, MAX31725 temperature sensors utilize high resolution sigma-Δ
Measured temperature is converted to numeral output by A/D converter (ADC), and ± 0.5 DEG C is kept in the range of -40 DEG C to+105 DEG C
Precision is compatible with 2 line serial communications by I2C.
On the basis of any of the above-described embodiment, in one embodiment of the invention, the power supply 20 is a reaction
Speed can adjust the power supply of output current in real time, described sharp so as to quickly adjust with control signal described in quick response
The output power of light device 10 achievees the purpose that the temperature for quickly adjusting the laser 10.Optionally, the power supply 20 is program-controlled
Power supply, to achieve the purpose that adjust its output current in real time.
On the basis of above-described embodiment, in one particular embodiment of the present invention, the programmable power supply is programmable
Digital DC power supply preferably customizes programmable digital DC power supply, specifically, in one embodiment of the invention, it is described
The rated voltage of programmable power supply is 260V, rated current 12A, rated power 200W；Degree of regulation is 0-1%, including the right side
Endpoint value is preferably 0.1%；Adjusting stability is 0-1%, is preferably 0.1% including right end point value.But the present invention to this simultaneously
It does not limit, specifically depends on the circumstances.
On the basis of any of the above-described embodiment, in one embodiment of the invention, the preset condition includes first
Preset condition, the controller 30 are used for when the temperature of the laser 10 meets the first preset condition, the first control of generation
Signal, the first control signal are used to that the power supply 20 to be controlled to reduce drive signal of the output to the laser 10, so as to
Reduce the output power of the laser 10, to reduce the temperature of the laser 10, it is made to drop back in normal range (NR).
Optionally, on the basis of above-described embodiment, in one embodiment of the invention, the first preset condition bag
It includes：The duration that the temperature of the laser 10 is more than the first preset temperature value is more than the first preset time.
Specifically, on the basis of above-described embodiment, in one embodiment of the invention, first preset temperature value
For the maximum temperature in 10 normal range of operation of laser；When first preset time is the judgement of the controller 30
Between.The temperature anomaly of the short time or temperature anomaly duration is not above as caused by being delayed cooling system as
120s, therefore, first preset time can be 120s, but the present invention does not limit this, specifically depends on the circumstances.
In another embodiment of the present invention, first preset condition includes：The temperature of the laser 10 is more than
The duration of first preset temperature is more than the first preset time, and the temperature of the laser 10 is in the second preset time
Increasing degree is less than the second preset temperature value.In embodiments of the present invention, the controller 30 is additionally operable in the laser 10
Increasing degree of the temperature in the second preset time when being not less than the second preset temperature value, generate second control signal, it is described
Second control signal is its corresponding described 10 output drive signal of laser for the power supply 20 to be controlled to stop, to utilize
Controller 30 is stated when the temperature of the laser 10 drastically raises, the power supply 20 of the laser 10 is cut off, with to the laser
10 and the semicondcutor laser unit protected.
Specifically, in one embodiment of the invention, second preset time is 60s, second preset temperature
It is worth for 3 DEG C, but the present invention does not limit this, specifically depends on the circumstances.
On the basis of any of the above-described embodiment, in one embodiment of the invention, the semicondcutor laser unit is also
Including display, for showing the abnormality of the laser 10.Specifically, in the present embodiment, the controller 30 is also
When temperature for being collected in the temperature sensor meets preset condition, by the state output of the laser 10 to described
Display, to show the abnormality of the laser 10 using the display, in order to which user checks.Wherein, it is described to swash
The abnormality of light device 10 meets the current temperature of the state of preset condition, such as laser 10 for the temperature of the laser 10
Degree and/or, the laser 10 be more than the first preset temperature duration and/or, the laser 10 meets first in advance
If maximum temperature and/or the laser 10 in condition time periods in duration of different temperatures etc., the present invention to this simultaneously
It does not limit, specifically depends on the circumstances.
It should be noted that on the basis of above-described embodiment, in one embodiment of the invention, the controller 30
It is additionally operable to, when the temperature that the temperature sensor collects the laser 10 meets three preset conditions, pass the temperature
The state that sensor meets the 3rd preset condition is recorded, but is not processed and (do not adjusted the corresponding laser of the temperature sensor
The drive signal of device 10).Wherein, the 3rd preset condition collects the temperature of the laser 10 for the temperature sensor
More than the first preset temperature value, but the duration of first preset temperature value is no more than first preset time.Optionally,
The controller 30 is used for when the temperature that the temperature sensor collects the laser 10 meets three preset conditions, right
The state that the temperature sensor meets the 3rd preset condition specifically includes when being recorded and records the current of the laser 10
Temperature and/or, record duration of the laser 10 more than the first preset temperature and/or, record the laser 10
Meeting maximum temperature in the 3rd preset condition period etc., the present invention does not limit this, specifically depends on the circumstances, so as to
Understand the history working condition of the laser 10 in user.
On the basis of any of the above-described embodiment, in one embodiment of the invention, the controller 30 is additionally operable to
The temperature that the temperature sensor collects generates information warning when meeting preset condition, the display is additionally operable in the temperature
When the temperature that degree sensor collects meets preset condition, information warning is sent, the information warning is used to inform described in user
The abnormality of laser 10, user to be reminded to repair as early as possible.
In conclusion in the semicondcutor laser unit that the embodiment of the present invention is provided, each laser 10 corresponds to an electricity
Source 20, and the output current of the power supply 20 is adjustable, so as to gather its place laser 10 using the temperature sensor
Temperature, and export to the controller 30, met using the controller 30 in the temperature that the temperature sensor collects
During preset condition, reduce the 10 corresponding power supply 20 of laser and export to the drive signal of the laser 10, and then reduce this and swash
The output power of light device 10, to achieve the purpose that reduce the temperature of the laser 10 so that each in the semicondcutor laser unit
The operating temperature of laser 10 is essentially identical and is maintained within normal range, and solves in existing semicondcutor laser unit due to single
10 temperature of laser is excessively high, and aging speed is very fast, the problem of influencing the stability and service life of the semicondcutor laser unit,
Reduce the incidence of the failure of the semicondcutor laser unit, increase the durability of the semicondcutor laser unit, to keep
The stability of the semicondcutor laser unit is improved on the premise of the semiconductor laser dress stable output power, described in extension
The service life of semicondcutor laser unit.
Moreover, the semicondcutor laser unit that the embodiment of the present invention is provided, in the output of the laser 10 to operation irregularity
It is that single laser 10 is adjusted when power is adjusted, to the overall output power shadow of entire semicondcutor laser unit
Ring little, and 10 quantity of laser that the semicondcutor laser unit includes is more, this to influence smaller, improves and described partly leads
The stability of volumetric laser device.
Various pieces are described by the way of progressive in this specification, and what each some importance illustrated is and other parts
Difference, just to refer each other for identical similar portion between various pieces.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
Embodiment illustrated herein is not intended to be limited to, and is to fit to consistent with the principles and novel features disclosed herein
Most wide scope.
Claims (10)
1. a kind of semicondcutor laser unit, which is characterized in that including：
Multiple lasers, the laser have been internally integrated temperature sensor, for gathering the temperature of the laser；
Multiple adjustable power supplys of output current, the power supply and the laser correspond, for for its corresponding laser
Drive signal is provided；
With the controller of multiple power electric connections, the temperature that the controller is used to collect in the temperature sensor meets pre-
If generating control signal during condition, the control signal is exported for reducing the power supply to the drive signal of the laser.
2. semicondcutor laser unit according to claim 1, which is characterized in that the controller is used in the laser
Temperature when meeting the first preset condition, generate first control signal, the first control signal is for controlling the power supply to subtract
It is small to export to the drive signal of the laser.
3. semicondcutor laser unit according to claim 2, which is characterized in that first preset condition includes：
The duration that the temperature of the laser is more than the first preset temperature value is more than the first preset time.
4. semicondcutor laser unit according to claim 2, which is characterized in that first preset condition includes：
The duration that the temperature of the laser is more than the first preset temperature is more than the first preset time, and the laser
Increasing degree of the temperature in the second preset time is less than the second preset temperature value.
5. semicondcutor laser unit according to claim 4, which is characterized in that the controller is additionally operable in the laser
When increasing degree of the temperature of device in the second preset time is not less than the second preset temperature value, second control signal, institute are generated
Second control signal is stated for the power supply to be controlled to stop as its corresponding described laser output drive signal.
6. according to claim 1-5 any one of them semicondcutor laser units, which is characterized in that further include：
Display, for showing the abnormality of the laser, the abnormality of the laser includes the laser
Temperature meets the state of preset condition.
7. semicondcutor laser unit according to claim 6, which is characterized in that the display is additionally operable in the temperature
The temperature that sensor collects sends information warning when meeting preset condition, the information warning is used to inform laser described in user
The abnormality of device.
8. semicondcutor laser unit according to claim 1, which is characterized in that the temperature sensor is for acquisition in real time
The temperature of the laser；The temperature sensor uses MAX31725 temperature sensors.
9. semicondcutor laser unit according to claim 1, which is characterized in that the power supply is programmable power supply, for reality
When adjust output to the laser drive signal.
10. semicondcutor laser unit according to claim 9, which is characterized in that the programmable power supply is programmable digital
DC power supply, the rated voltage of the programmable power supply is 260V, rated current 12A, rated power 200W, and degree of regulation is
0-1%, including right end point value, adjusting stability is 0-1%, including right end point value.
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| CN201711462506.4A CN108123364A (en) | 2017-12-28 | 2017-12-28 | A kind of semicondcutor laser unit |
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| CN201711462506.4A CN108123364A (en) | 2017-12-28 | 2017-12-28 | A kind of semicondcutor laser unit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021103734A1 (en) * | 2019-11-26 | 2021-06-03 | 常州华达科捷光电仪器有限公司 | Line laser level |
| CN113689804A (en) * | 2021-07-12 | 2021-11-23 | 中国船舶电站设备有限公司 | Emergency escape indicating device |
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| WO2021103734A1 (en) * | 2019-11-26 | 2021-06-03 | 常州华达科捷光电仪器有限公司 | Line laser level |
| CN113689804A (en) * | 2021-07-12 | 2021-11-23 | 中国船舶电站设备有限公司 | Emergency escape indicating device |
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Application publication date: 20180605 |