CN108122806A - A kind of Wet-method etching device - Google Patents
A kind of Wet-method etching device Download PDFInfo
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- CN108122806A CN108122806A CN201611076132.8A CN201611076132A CN108122806A CN 108122806 A CN108122806 A CN 108122806A CN 201611076132 A CN201611076132 A CN 201611076132A CN 108122806 A CN108122806 A CN 108122806A
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- etching
- liquid
- wet
- etching device
- method etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a kind of Wet-method etching device, includes etching cavity shell, etching agent flusher, waste vapour discharger, wafer clamping device, waste liquid recovery apparatus, which is characterized in that the waste vapour discharger is arranged below chamber and from top to bottom discharges waste vapour.Wet-method etching device having thus described the invention can reduce the condensation of vapour reaction liquid, reaction product and/or deionized water in etch chamber during wet etching, effectively liquid in the reaction of recycling etch chamber, ensure the drying of etch chamber internal ambience, the liquid reduced simultaneously in etching reaction irregularly splashes, residual of the liquid in crystal column surface is reduced, so as to reduce the decline of etching wafer yield.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular to a kind of Wet-method etching device.
Background technology
Wet etching is having a wide range of applications in semiconductor fabrication process.The mechanism of wet chemical etch relates generally to
Three root phases：Transport chemically reacts, reactant is generated with reaction to reaction crystal column surface in crystal column surface
Object is removed from crystal column surface.In etching apparatus, spray-type etching progressively substitutes immersion etching at present, wet in semiconductor
Leading position is occupied in method etching technics.
During semiconductor fabrication process, the surface cleanliness of semiconductor crystal wafer is to semiconductor crystal wafer yield and follow-up manufacture
Technique is smoothed out playing a crucial role.Etching liquid is tended to occur in wet etching and is sprayed to high speed rotating wafer
Liquid splash and vapour reaction liquid occur for surface and deionized water condenses splash to crystal column surface in chamber air and causes
The residual on wafer such as reaction product, influences wafer etching effect, so as to influence wafer yield.Such as metal under ball
In the wet-etching technology of the Cu of layer, etching liquid condensation reflux in the cavity and cause it is water stain remain in crystal column surface, and then
TiW etching residues are caused, influence wafer yield.
How the liquefaction condensation in wet etching chamber is reduced in vapour reaction liquid and reaction product in etch chamber, effectively
Reaction liquid in etch chamber is recycled, prevents reaction liquid splash in etching process, reduces residual of the liquid in crystal column surface, so as to
The decline for reducing wafer yield is the problem of care the semiconductor manufacturing manufacturer chief phase with paying attention to.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
For the liquefaction condensation in vapour reaction liquid in reduction wet etching chamber and reaction product in etch chamber, effectively recycle
Reaction liquid in etch chamber prevents reaction liquid splash in etching process, residual of the liquid in crystal column surface is reduced, so as to reduce
The decline of wafer yield, the present invention provides a kind of Wet-method etching devices, and comprising etching cavity shell, etching agent flusher gives up
Vapour discharger, wafer clamping device, waste liquid recovery apparatus, the waste vapour discharger, which is arranged below chamber, from top to bottom will
Waste vapour is discharged.
Illustratively, the waste vapour discharger include condenser, for condense vapour reaction liquid, reaction product and/or
Deionized water.
Illustratively, the waste vapour discharger includes gas exhaust manifold and liquid discharge tube road.
Illustratively, the etching device includes at least two sets of waste vapour dischargers, is evenly distributed in etch chamber.
Illustratively, the etching cavity shell is arc shell.
Illustratively, the etch chamber inner walls are formed with one layer of hydrophilic film.
Illustratively, the liquid withdrawal system includes etching liquid reclaiming cover and/or deionized water reclaiming cover.
Illustratively, the etching liquid reclaiming cover and/or deionized water reclaiming cover top edge are higher than wafer 3-5mm.
Illustratively, the etching liquid reclaiming cover is within crystal round fringes 2mm.
Illustratively, the wafer clamping device is provided with the finger portion structure that upper end carries liquid guide device.
Illustratively, the liquid guide device be curved month type structure, thickness from the big one end of radian to radian it is small one
End gradually increases.
Wet-method etching device having thus described the invention can reduce vapour reaction liquid, reaction product during wet etching
And/or condensation of the deionized water in etch chamber, the reaction liquid in wet etching is effectively recycled, ensures etch chamber internal ambience
It is dry, while reduce the liquid in etching reaction and irregularly splash, residual of the liquid in crystal column surface is reduced, so as to reduce etching
The decline of wafer yield.
Description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Figure 1A is each component locations and structure diagram in existing Wet-method etching device；
Figure 1B is the finger portion structure diagram set in existing Wet-method etching device on wafer clamping device；
Fig. 2A is each component locations and structure diagram in Wet-method etching device of the present invention；
Fig. 2 B are the finger portion structure diagram set in Wet-method etching device of the present invention on wafer clamping device；
Specific embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed description will be proposed in following description, it is of the present invention wet to illustrate
Method etching device.Obviously, execution of the invention is not limited to the specific details that the technical staff of semiconductor applications is familiar with.This hair
Bright preferred embodiment is described in detail as follows, however in addition to these detailed descriptions, the present invention can also have other embodiment party
Formula.
It should give it is noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Intention includes plural form.Additionally, it should be understood that when in the present specification use term "comprising" and/or " comprising "
When, it indicates there are the feature, entirety, step, operation, element and/or component, but does not preclude the presence or addition of one or more
Other a features, entirety, step, operation, element, component and/or combination thereof.
Now, exemplary embodiment according to the present invention is more fully described with reference to the accompanying drawings.However, these exemplary realities
Applying example can be implemented with many different forms, and should not be construed to be limited solely to the embodiments set forth herein.It should
These embodiments that are to provide understood are in order to enable disclosure of the invention is thoroughly and complete, and by these exemplary implementations
The design of example is fully conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, the thickness of layer and region is exaggerated
Degree, and make identical element is presented with like reference characters, thus description of them will be omitted.
Below original according to the present invention will be explained using the Wet-method etching device in copper etching technics as specific embodiment
Reason.Embodiment is not intended to carry out technical scheme using the Wet-method etching device in copper etching technics as example
It limits, it is clear that technical scheme can also be applied to involved in other semiconductor technology processing procedures to Wet-method etching device
In.
TiW/Cu as, it is necessary to carry out the wet-etching technology of copper, removed in the packaging technology of ball lower metal layer Cu and
TiW layers under Cu.Based on H2O2It is at low cost, simple, the advantages that production capacity is high is prepared, frequently with H2O2It is widely used in industry TiW layers
In wet-etching technology.But H2O2Possesses the characteristics of active low, on TiW surfaces there are any water stain, etching liquid residual all can
Cause H2O2It can not be corroded, so as to which TiW residuals occur.Frequently with square etch chamber shell in existing Wet-method etching device
Body includes etching agent flusher, waste vapour discharger, wafer clamping device, waste liquid recovery apparatus, such as Fig. 1 institutes in housing
Show.Etching agent flusher 104 provides the etching agent needed for etching reaction and the deionized water after reaction carries out corruption to wafer
Erosion and cleaning.Wafer 106 rotates at a high speed under the action of wafer clamping device 105.After generation etching reaction, a part of etching liquid
103 are recycled by waste liquid recovery apparatus with deionized water, wherein etching agent and reaction product is returned by etching liquid reclaiming cover 108
It receives, is recycled after the completion of etching as cleaning wafer deionized water via deionized water reclaiming cover 109；Another part etching agent and
Deionized water forms steam state or drop in etching process due to splashing and vaporizing etc. in etching cavity, via etch chamber
Interior waste vapour discharger 102 discharges cavity.In the actual production process, since waste vapour discharger 102 is arranged at the top of cavity,
Extraction discharge is carried out to liquid vapour in cavity by the way of taking out from the bottom up so that steam state etching agent, reaction product and/or go from
Sub- water and suspending drops cause atmosphere in cavity moist in the cavity；Meanwhile waste vapour condenses in the cavity, formed liquid and
Hanging drop is assembled in 102 pipeline opening of waste vapour discharger, and partially liq is back to cavity, further results in atmosphere tide in cavity
Wet, splash causes water stain, etching liquid residual, so as to which TiW residuals occur to crystal column surface under serious conditions.Further, due to useless
The etching liquid reclaiming cover 108 and/or deionized water reclaiming cover 109 of liquid retracting device are flushed with 106 height of wafer, and wafer is at a high speed
Partially liq has been caused to cross reclaiming cover in rotation to splash on cavity wall；Finger portion structure 105 on wafer clamping device is than brilliant
Circle is high, and as shown in Figure 1B, for wafer when high speed rotates, after the liquid that is sputtered from crystal column surface encounters finger portion structure, backwash is extremely
Crystal column surface.The irregular of these liquid is splashed and backwash can all cause that atmosphere is moist in cavity and liquid is in the residual of crystal column surface
It stays.
It is carved to reduce the liquefaction condensation of vapour reaction liquid and reaction product in etch chamber, effectively recycling in wet etching chamber
Reaction liquid in chamber is lost, prevents reaction liquid splash in etching process, residual of the liquid in crystal column surface is reduced, so as to reduce crystalline substance
The decline of circle yield, the present invention provide a kind of Wet-method etching device, include etching cavity shell, etching agent flusher, waste vapour row
Go out device, wafer clamping device, waste liquid recovery apparatus from top to bottom will wherein the waste vapour discharger is arranged below chamber
Waste vapour is discharged.
Illustratively, the waste vapour discharger include condenser, for condense vapour reaction liquid, reaction product and/or
Deionized water.
Illustratively, the waste vapour discharger includes gas exhaust manifold and liquid discharge tube road.
Illustratively, the etching device includes at least two sets of waste vapour dischargers, is evenly distributed in etch chamber.
Illustratively, the etching cavity shell is arc shell.
Illustratively, the etch chamber inner walls are formed with one layer of hydrophilic film.
Illustratively, the liquid withdrawal system includes etching liquid reclaiming cover and/or deionized water reclaiming cover.
Illustratively, the etching liquid reclaiming cover and/or deionized water reclaiming cover top edge are higher than wafer 3-5mm.
Illustratively, the etching liquid reclaiming cover is within crystal round fringes 2mm.
Illustratively, the wafer clamping device is provided with the finger portion structure that upper end carries liquid guide device.
Illustratively, the liquid guide device be curved month type structure, thickness from the big one end of radian to radian it is small one
End gradually increases.
Wet-method etching device having thus described the invention can reduce vapour reaction liquid, reaction product during wet etching
And/or condensation of the deionized water in etch chamber, the reaction liquid in wet etching is effectively recycled, ensures etch chamber internal ambience
It is dry, while reduce the liquid in etching reaction and irregularly splash, residual of the liquid in crystal column surface is reduced, so as to reduce etching
The decline of wafer yield.
Embodiment one
A kind of Wet-method etching device of the present embodiment proposition is described below with reference to Fig. 2A and Fig. 2 B, wherein, Fig. 2A is this
The cavity body structure schematic diagram that a kind of Wet-method etching device that embodiment proposes includes, Fig. 2 B are a kind of wet method that the present embodiment proposes
The structure diagram of the finger portion structure set on the wafer clamping device that etching device includes.
Referring to Fig. 2A, the cavity body structure schematic diagram that a kind of Wet-method etching device of the present invention includes is shown.Including
Cavity shell 201 is etched, includes etching agent flusher 204 in housing, waste vapour discharger 202, wafer clamping device 205,
Waste liquid recovery apparatus 203.Wherein, waste vapour discharger 202 is provided with condenser 207, and condenser one end is connected to cavity, another
End is connected with three-way connection, and wherein three-way connection Single port sets liquid discharge tube road 211, and another port sets gas outlet pipe
Road 212.Waste liquid recovery apparatus 203 is provided with etching liquid reclaiming cover 208 and deionized water reclaiming cover 209, is respectively used to etching work
The recycling of etching agent and reaction product and the recycling of deionized water during skill.Meanwhile wafer clamping device 205 includes crystalline substance
Circle gripping finger structure, wherein, refer to portion structure upper end and be provided with liquid guide device 213, as shown in Figure 2 B.
According to a preferred embodiment of the present invention, the waste vapour discharger is arranged below chamber.Compared to existing
Waste vapour discharger is disposed over the mode being evacuated from the bottom up in technology, and the present embodiment is arranged on using waste vapour discharger
Below chamber, air suction mode becomes the mode being evacuated from top to bottom, can make steam state etching agent, reaction product and/or deionized water
Natural subsidence reduces the phenomenon that steam state substance is suspended in chamber, so as to reduce chamber internal ambience humidity, while also avoids steam state
It condenses into accumulation of fluid splash in liquid process and, to chamber, splashes to crystal column surface.
According to a preferred embodiment of the present invention, the waste vapour discharger includes condenser, anti-for condensing steam state
Answer liquid, reaction product and/or deionized water.As shown in Figure 2 A, condenser 207 is provided on waste vapour discharger 202, for cold
Steam state etching agent, reaction product and/or deionized water in solidifying cavity, can increase steam state etching agent, reaction product and/or deionization
Water condensation forms the efficiency of liquid, on the one hand ensures atmosphere drying in cavity, on the other hand increases waste vapour expulsion efficiency.
According to a preferred embodiment of the present invention, the waste vapour discharger includes gas exhaust manifold and liquid is discharged
Pipeline.Illustratively, waste vapour discharger condenser one end connection three-way connection, promotes steam state etching agent, reaction product
And/or the accumulation of fluid that deionized water is condensed into, in threeway nozzle, three-way pipeline one end is flowed out for liquid, and the other end is used for gas
Body is discharged.As shown in Figure 2 A, for the liquid pools of condenser condensation in threeway nozzle 210, wherein liquid passes through liquid discharge tube road
211 discharges, gas are discharged by gas exhaust manifold 212, are effectively increased waste vapour condensation and expulsion efficiency.
According to a preferred embodiment of the present invention, the etching device includes at least two sets of waste vapour dischargers,
It is even to be distributed in etch chamber.Illustratively, as shown in Figure 2 A, waste vapour discharger 203 is respectively arranged at cavity both ends, it is this
Setting can effectively shorten steam state etching agent and deionized water in the indoor stroke of chamber, and further increase waste vapour expulsion efficiency ensures
Chamber internal ambience is dried.
According to a preferred embodiment of the present invention, the etching cavity shell is arc shell.As shown in Figure 2 A, etch chamber
Housing 201 replaces square casing of the prior art using arc, is conducive to the liquid automatic stream recycling dress on chamber inner wall
It puts, while one layer of hydrophilic film is provided in housing and reduces liquid accumulation into drop, further liquid spitting back is avoided to drop to wafer
Surface.
According to a preferred embodiment of the present invention, the liquid withdrawal system include etching liquid reclaiming cover and/or go from
Sub- water reclaiming cover.As shown in Figure 2 A, waste liquid recovery apparatus 203 is configured with etching liquid reclaiming cover 208 and/or deionized water reclaiming cover
209, it is respectively used to the recycling of etching agent and reaction product and the recycling of deionized water in etching process.Compared to existing
Technology, the etching liquid reclaiming cover 208 and/or 209 top edge of deionized water reclaiming cover are higher than wafer 3-5mm, ensure etched
Liquid high efficiente callback in journey reduces the irregular splashing of liquid.Etching liquid reclaiming cover 208, can within crystal round fringes 2mm
Further prevent the irregular splashing of liquid.
According to a preferred embodiment of the present invention, the wafer clamping device is provided with upper end and carries liquid guide device
Finger portion structure.As shown in Figure 2 B, liquid guide device 213 is set in the finger portion structure of clamping wafer, for will be in etching process
In, the liquid to splash due to wafer rotates at a high speed is after finger portion structure is encountered through finger portion structure upper end liquid guide device 213
Guiding role is entered along finger portion structure in liquids recovery cover 203.Illustratively, the liquid guide device 213 is curved month type
Structure, thickness are gradually increased from the big one end of radian to the small one end of radian, are tied so as to avoid the occurrence of liquid splash to finger portion
It is further irregular after structure to splash or even backwash is to crystal column surface.It should be noted that the embodiment of the present invention is in finger portion structure
Liquid guide device structure carry out exemplary description be not intended to be defined liquid guide device structure, other can make etched
The liquid that finger portion structure is splashed in journey lumen body enters in liquids recovery cover along finger portion structure and is irregularly flown with reducing liquid
The structure splashed is suitable for the invention in the setting of the liquid guide device of finger portion structure.
Wet-method etching device having thus described the invention can reduce vapour reaction liquid, reaction product during wet etching
And/or condensation of the ion steam in etch chamber, the reaction liquid in wet etching is effectively recycled, ensures etch chamber internal ambience
It is dry, while reduce the liquid in etching reaction and irregularly splash, residual of the liquid in crystal column surface is reduced, so as to reduce etching
The decline of wafer yield.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art
Member is it is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (11)
1. a kind of Wet-method etching device, which is characterized in that comprising etching cavity shell, etching agent flusher, waste vapour discharger,
Wafer clamping device, waste liquid recovery apparatus, wherein, the waste vapour discharger is arranged below chamber and from top to bottom arranges waste vapour
Go out.
2. Wet-method etching device as described in claim 1, which is characterized in that the waste vapour discharger includes condenser, uses
In condensation vapour reaction liquid, reaction product and/or deionized water.
3. Wet-method etching device as described in claim 1, which is characterized in that the waste vapour discharger includes gas outlet pipe
Road and liquid discharge tube road.
4. Wet-method etching device as described in claim 1, which is characterized in that the etching device includes at least two sets of waste vapour
Discharger is evenly distributed in etch chamber.
5. Wet-method etching device as described in claim 1, which is characterized in that the etching cavity shell is arc shell.
6. Wet-method etching device as claimed in claim 5, which is characterized in that the etch chamber inner walls are formed with one layer of parent
Moisture film.
7. Wet-method etching device as described in claim 1, which is characterized in that the liquid withdrawal system is recycled comprising etching liquid
Cover and/or deionized water reclaiming cover.
8. Wet-method etching device as claimed in claim 7, which is characterized in that the etching liquid reclaiming cover and/or deionized water
Reclaiming cover top edge is higher than wafer 3-5mm.
9. Wet-method etching device as claimed in claim 7, which is characterized in that the etching liquid reclaiming cover is apart from crystal round fringes
Within 2mm.
10. Wet-method etching device as described in claim 1, which is characterized in that the wafer clamping device is provided with upper end band
There is the finger portion structure of liquid guide device.
11. Wet-method etching device as claimed in claim 10, which is characterized in that the liquid guide device is curved month type structure,
Its thickness is gradually increased from the big one end of radian to the small one end of radian.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611076132.8A CN108122806A (en) | 2016-11-29 | 2016-11-29 | A kind of Wet-method etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611076132.8A CN108122806A (en) | 2016-11-29 | 2016-11-29 | A kind of Wet-method etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108122806A true CN108122806A (en) | 2018-06-05 |
Family
ID=62226198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611076132.8A Pending CN108122806A (en) | 2016-11-29 | 2016-11-29 | A kind of Wet-method etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108122806A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300808A (en) * | 2018-09-26 | 2019-02-01 | 华进半导体封装先导技术研发中心有限公司 | A kind of semiconductor device for wet-treating crystal round fringes |
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| CN101673062A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Device and method for removing photoresist by whole wet method |
| CN104246983A (en) * | 2012-04-24 | 2014-12-24 | 应用材料公司 | Gas reclamation and abatement system for high volume epitaxial silicon deposition system |
| CN104347394A (en) * | 2013-07-30 | 2015-02-11 | 马悦 | Wet etching device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109300808A (en) * | 2018-09-26 | 2019-02-01 | 华进半导体封装先导技术研发中心有限公司 | A kind of semiconductor device for wet-treating crystal round fringes |
| CN109300808B (en) * | 2018-09-26 | 2020-09-01 | 华进半导体封装先导技术研发中心有限公司 | Semiconductor device for wet processing of wafer edge |
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Application publication date: 20180605 |