CN108122803B - Method for determining the defect attribute of a thin film - Google Patents

Method for determining the defect attribute of a thin film Download PDF

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Publication number
CN108122803B
CN108122803B CN201711332288.2A CN201711332288A CN108122803B CN 108122803 B CN108122803 B CN 108122803B CN 201711332288 A CN201711332288 A CN 201711332288A CN 108122803 B CN108122803 B CN 108122803B
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defect
peeling
silicon
based substrate
determining
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CN108122803A (en
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陈莉芬
刘宇
王卉
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
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Abstract

The present invention discloses a method for determining the defect attribute of a thin film. The method for determining the defect attribute of the thin film includes the step S1: providing a silicon-based substrate, and preparing functional layers on the silicon-based substrate; step S2: positioning the peeling defect to be analyzed on the functional layer under the action of an electron microscope; step S3: depositing an oxide layer on the silicon-based substrate with the stripping defect to be analyzed so as to fix the stripping defect to be analyzed on the silicon-based substrate; step S4: and (4) attributing the silicon-based substrate with the fixed stripping defect to be analyzed to a positioning position, and determining the attribute of the film defect. The invention not only can position the stripping defect under the action of an electron microscope, fix the stripping defect through depositing the oxide layer, determine the attribute of the film defect at the positioning position, but also can determine the source of the stripping defect and carry out targeted process improvement to eliminate the stripping defect and improve the yield of products.

Description

Method for determining the defect attribute of a thin film
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and more particularly, to a method for determining the attributes of a thin film defect.
Background
In the actual chip production process, we find that the chips of the 0.11 μm flash memory and the logic platform usually have a large amount of peeling defects after the passivation layer alloying process. The above peeling defects appear as flakes under observation by an Optical Microscope (OM), and have a large size, even up to several tens of micrometers.
Obviously, the above-mentioned dense and large-sized peeling defects have a great influence on the subsequent process and the backend sealing. Meanwhile, the peeling defect is caused by peeling and only falls on the substrate, so that a machine table of a subsequent process and other products in the machine table are easily polluted.
In order to eliminate the above-derived peeling defects, workers need to analyze the composition and thickness of the peeling defects to determine the source of the peeling defects, thereby performing targeted improvement through the related processes. However, in the analysis of the peeling defect, workers in the art often encounter a problem that since the peeling defect is in a sheet shape and does not have any adhesion to the surface of the silicon wafer, when Failure (FA) analysis is performed on the peeling defect, the peeling defect must be moved to other places by the air flow formed in the vacuum pumping of the machine, so that the positioning cannot be performed, and the analysis fails.
Therefore, in order to solve the problems of the prior art, the present inventors have studied and improved the properties of the defect of the thin film based on the experience of many years in the industry.
Disclosure of Invention
The invention provides a method for determining the attribute of a film defect, aiming at the defects that in the prior art, the peeling defect is in a sheet shape and does not have any adhesive force with the surface of a silicon wafer, so that the peeling defect is subjected to Failure (FA) analysis, and when a machine is vacuumized, the peeling defect is always moved to other places by air flow formed when the machine is vacuumized, so that the positioning cannot be realized, and the analysis fails.
To achieve the object of the present invention, the present invention provides a method for determining the property of a thin film defect, comprising,
step S1 is executed: providing a silicon-based substrate, and preparing functional layers on the silicon-based substrate;
step S2 is executed: positioning the peeling defect to be analyzed on the functional layer under the action of an electron microscope;
step S3 is executed: depositing an oxide layer on a silicon-based substrate with a to-be-analyzed peeling defect so as to fix the to-be-analyzed peeling defect on the silicon-based substrate;
step S4 is executed: and (4) attributing the silicon-based substrate with the fixed stripping defect to be analyzed to a positioning position, and determining the attribute of the film defect.
Optionally, the functional layer is at least one of a passivation layer, a metal layer, and a dielectric layer.
Optionally, the electron microscope is at least one of an Optical Microscope (OM), a Scanning Electron Microscope (SEM), and a Transmission Electron Microscope (TEM).
Optionally, the deposition method of the oxide layer is chemical vapor deposition.
Optionally, the thickness of the oxide layer is set according to the thickness of the peeling defect.
Optionally, the thickness of the oxide layer at least covers the peeling defect and fixes the peeling defect.
Optionally, the property of the film defect is thickness, composition of the peeling defect.
Optionally, the method for determining the property of the film defect employs at least one of an energy spectrometer (EDX), an X-ray diffractometer (XRD) and an X-ray photoelectron spectrometer (XPS).
In summary, the method for determining the attributes of the thin film defects of the present invention not only can locate the peeling defects under the action of the electron microscope, fix the peeling defects by depositing the oxide layer, and determine the attributes of the thin film defects at the location, but also can identify the sources of the peeling defects, and perform a targeted process improvement to eliminate the peeling defects and increase the yield of the products.
Drawings
FIG. 1 is a flow chart of a method for determining the attributes of a thin film defect according to the present invention;
FIGS. 2(a) -2 (d) are schematic flow charts of the method for determining the defect properties of a thin film according to the present invention;
FIG. 3 is an electron microscope image of a peeling defect to be analyzed in the method for determining the defect property of a thin film according to the present invention;
FIGS. 4(a) to 4(c) are schematic views showing the steps of the method for determining the defect properties of a thin film according to the present invention.
Detailed Description
The invention will be described in detail with reference to the following embodiments and drawings for illustrating the technical content, structural features, and achieved objects and effects of the invention.
In the actual chip production process, we find that the chips of the 0.11 μm flash memory and the logic platform usually have a large amount of peeling defects after the passivation layer alloying process. The above peeling defects appear as flakes under observation by an Optical Microscope (OM), and have a large size, even up to several tens of micrometers.
Obviously, the above-mentioned dense and large-sized peeling defects have a great influence on the subsequent process and the backend sealing. Meanwhile, the peeling defect is caused by peeling and only falls on the substrate, so that a machine table of a subsequent process and other products in the machine table are easily polluted.
In order to eliminate the above-derived peeling defects, workers need to analyze the composition and thickness of the peeling defects to determine the source of the peeling defects, thereby performing targeted improvement through the related processes. However, in the analysis process of the peeling defect, workers in the field generally encounter the problem that the peeling defect is in a sheet shape and does not have any connection with the surface of the silicon wafer, so that when the peeling defect is subjected to Failure (FA) analysis, the peeling defect is necessarily moved to other places by air flow formed in vacuum pumping of a machine table, and the peeling defect cannot be positioned, and further analysis fails.
Referring to FIG. 1, FIG. 1 is a flow chart illustrating a method for determining the defect attributes of a thin film according to the present invention. The method for determining the attributes of the film defect comprises the following steps:
step S1 is executed: providing a silicon-based substrate, and preparing functional layers on the silicon-based substrate;
step S2 is executed: positioning the peeling defect to be analyzed on the functional layer under the action of an electron microscope;
step S3 is executed: depositing an oxide layer on a silicon-based substrate with a to-be-analyzed peeling defect so as to fix the to-be-analyzed peeling defect on the silicon-based substrate;
step S4 is executed: and (4) attributing the silicon-based substrate with the fixed stripping defect to be analyzed to a positioning position, and determining the attribute of the film defect.
In order to more intuitively disclose the technical solution of the present invention and to highlight the beneficial effects of the present invention, the method for determining the attributes of the film defects will now be described with reference to the following embodiments. In the embodiments, the "up" position of the wafer is described as being known to those skilled in the art, i.e., the side on which the functional layer of the wafer is formed. The order of determining the functional layer, the structure, the material composition, and the film defect attribute can be randomly adjusted, and those skilled in the art should understand that details are not repeated herein, and the illustration and the description listed in the present invention should not be construed as a limitation to the technical solution of the present invention.
Referring to FIGS. 2(a) -2 (d), in conjunction with FIG. 1, FIGS. 2(a) -2 (d) are a flow chart illustrating a method for determining the properties of a thin film defect according to the present invention in stages. The method for determining the attributes of the film defect comprises the following steps:
step S1 is executed: providing a silicon-based substrate, and preparing functional layers on the silicon-based substrate; as is readily known to those skilled in the art, the functional layers include, but are not limited to, passivation layers, metal layers, dielectric layers, and the like.
Step S2 is executed: positioning the peeling defect to be analyzed on the functional layer under the action of an electron microscope; the electron microscope may be at least one of an Optical Microscope (OM), a Scanning Electron Microscope (SEM), and a Transmission Electron Microscope (TEM).
Step S3 is executed: depositing an oxide layer on a silicon-based substrate with a to-be-analyzed peeling defect so as to fix the to-be-analyzed peeling defect on the silicon-based substrate; the deposition method of the oxide layer is, but not limited to, Chemical Vapor Deposition (CVD). The thickness of the oxide layer is set according to the thickness of the peeling defect. Further, the thickness of the oxide layer at least covers the peeling defect and fixes the peeling defect.
Step S4 is executed: and (4) attributing the silicon-based substrate with the fixed stripping defect to be analyzed to a positioning position, and determining the attribute of the film defect. As a specific embodiment, the properties of the film defect include, but are not limited to, thickness, composition, etc. of the lift-off defect. The method for determining the defect attribute of the thin film may use at least one of an energy spectrometer (EDX), an X-ray diffractometer (XRD) and an X-ray photoelectron spectrometer (XPS).
Referring to FIG. 3, FIGS. 4(a) -4 (c), FIG. 3 is a schematic diagram showing an electron microscope image of a peeling defect to be analyzed according to the method for determining the defect property of a thin film of the present invention. FIGS. 4(a) to 4(c) are schematic views showing the steps of the method for determining the defect properties of a thin film according to the present invention. By way of a specific embodiment, and not by way of limitation, for example, after a passivation layer alloying process, a lift-off defect is analyzed, and a method for determining a property of the thin film defect includes:
step S1 is executed: providing a silicon-based substrate 10, and preparing functional layers on the silicon-based substrate 10;
step S2 is executed: positioning the peeling defect 11 to be analyzed on the functional layer under the action of an Optical Microscope (OM) or a Scanning Electron Microscope (SEM);
step S3 is executed: depositing an Oxide layer (Oxide)12 on a silicon-based substrate 10 with a peeling defect 11 to be analyzed so as to fix the peeling defect to be analyzed on the silicon-based substrate 10; the deposition method of the oxide layer 12 is, but not limited to, Chemical Vapor Deposition (CVD). The thickness of the oxide layer 12 is set according to the thickness of the peeling defect 11. Further, the thickness of the oxide layer 12 at least covers the peeling defect 11, and fixes the peeling defect 11.
Step S4 is executed: the silicon-based substrate 10 with the affixed peeling defect 11 to be analyzed is assigned to the positioning site and determination of the properties of the film defect is performed. The properties of the film defect include, but are not limited to, the thickness, composition, etc. of the lift-off defect 11. Further, the thickness of the peeling defect obtained under an electron microscope is 1200 angstroms, and the composition of the peeling defect analyzed by an energy spectrometer (EDX) is SixNyThe source of the peeling defect can be known and the targeted improvement can be performed to eliminate the peeling defect of the thin film.
Obviously, the method for determining the attributes of the film defects not only can position the peeling defects under the action of an electron microscope, fix the peeling defects through depositing an oxide layer and determine the attributes of the film defects at the positioning position, but also can determine the sources of the peeling defects and perform targeted process improvement to eliminate the peeling defects and improve the product yield.
In summary, the method for determining the attributes of the thin film defects of the present invention not only can locate the peeling defects under the action of the electron microscope, fix the peeling defects by depositing the oxide layer, and determine the attributes of the thin film defects at the location, but also can identify the sources of the peeling defects, and perform a targeted process improvement to eliminate the peeling defects and increase the yield of the products.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims (6)

1. A method for determining the properties of a thin film defect, comprising,
step S1 is executed: providing a silicon-based substrate, and preparing functional layers on the silicon-based substrate;
step S2 is executed: positioning the peeling defect to be analyzed on the functional layer under the action of an electron microscope;
step S3 is executed: depositing an oxide layer on a silicon-based substrate with a to-be-analyzed peeling defect so as to fix the to-be-analyzed peeling defect on the silicon-based substrate;
step S4 is executed: the fixed silicon-based substrate with the peeling defect to be analyzed is assigned to a positioning position, and the attribute of the film defect is determined; the thickness of the oxide layer is set according to the thickness of the peeling defect, and the thickness of the oxide layer at least covers the peeling defect and fixes the peeling defect.
2. The method of claim 1, wherein the functional layer is at least one of a passivation layer, a metal layer, and a dielectric layer.
3. The method of claim 1, wherein the electron microscope is at least one of a Scanning Electron Microscope (SEM) and a Transmission Electron Microscope (TEM).
4. The method of determining the nature of a film defect of claim 1 wherein the oxide layer is deposited by chemical vapor deposition.
5. The method of claim 1, wherein the property of the film defect is a thickness, a composition of a peeling defect.
6. The method of claim 1, wherein the method of determining the properties of the thin film defect comprises at least one of an energy spectrometer (EDX), an X-ray diffractometer (XRD) and an X-ray photoelectron spectrometer (XPS).
CN201711332288.2A 2017-12-13 2017-12-13 Method for determining the defect attribute of a thin film Active CN108122803B (en)

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US7141179B2 (en) * 2004-08-23 2006-11-28 Macronix International Co., Ltd. Monitoring semiconductor wafer defects below one nanometer
JP5443232B2 (en) * 2010-03-26 2014-03-19 株式会社野毛電気工業 Defect inspection equipment
CN102539448A (en) * 2010-12-08 2012-07-04 无锡华润上华科技有限公司 Development residue detecting method
CN103645073A (en) * 2013-11-22 2014-03-19 上海华力微电子有限公司 Method for preparing TEM sample
CN103972125A (en) * 2014-05-21 2014-08-06 上海华力微电子有限公司 Method for monitoring and preventing spalling defect of connecting hole tungsten plug adhesive layer in advance
CN104362082B (en) * 2014-11-10 2017-03-08 上海华力微电子有限公司 Come off the method that defect determines suspicious processing step according to special circuit structure

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