CN108111154A - A kind of resistance shares on-off circuit - Google Patents
A kind of resistance shares on-off circuit Download PDFInfo
- Publication number
- CN108111154A CN108111154A CN201711207415.6A CN201711207415A CN108111154A CN 108111154 A CN108111154 A CN 108111154A CN 201711207415 A CN201711207415 A CN 201711207415A CN 108111154 A CN108111154 A CN 108111154A
- Authority
- CN
- China
- Prior art keywords
- resistance
- transistor
- switching device
- switch
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Electronic Switches (AREA)
Abstract
The invention discloses a kind of resistance to share on-off circuit, including transmitting terminal TX, receiving terminal RX, transistor M1, transistor M2, transistor M3, transistor M4, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, switching device K1, switching device K2, switching device K3, switching device K4, control signal SC1, control signal SC2, switch S1, switch S2, switch S3, switch S4 and antenna ANT.Advantageous effect：Compared with conventional switch circuit, while on-off circuit normal operation is ensured, the resistance quantity included in chip halves, therefore can provide the useful effect of chip size reduction, and the size of electronic equipment is achieved miniaturization.
Description
Technical field
The present invention relates to on-off circuit technical field, it particularly relates to which a kind of resistance shares on-off circuit.
Background technology
RF switch belongs to cable television network or communication field signaling switch, for passing through for wire transmission radiofrequency signal
Control can be widely used for the fields such as carrier telephone switching, cable TV signal switching, cable TV signal switch.Switching device
It is arranged between transmitting terminal and antenna and between receiving terminal and antenna, so as to alternately by transmitting terminal or be connect according to control signal
Receiving end is connected to antenna, by applying control signal to the body of switching device, can realize the mesh for such as removing low-frequency noise
's.At the same time, although the signal for being sent to the signal of antenna from transmitting terminal or being sent to receiving terminal from antenna has relatively
Big power, but the breakdown voltage of switching device is relatively low, therefore string is used between transmitting terminal or receiving terminal and antenna
Join multiple transistors of connection.When using the multiple transistors being connected in series, the control terminal of each transistor connects electricity
Device is hindered, is increased so as to the quantity of resistor, it is difficult to realize the miniaturization of chip and electronic equipment.
The problem of in correlation technique, currently no effective solution has been proposed.
The content of the invention
The problem of in correlation technique, the present invention propose that a kind of resistance shares on-off circuit, to overcome existing related skill
Above-mentioned technical problem present in art.
The technical proposal of the invention is realized in this way：
A kind of resistance shares on-off circuit, including transmitting terminal TX, receiving terminal RX, transistor M1, transistor M2, transistor
M3, transistor M4, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, electricity
Hinder R10, resistance R11, resistance R12, resistance R13, resistance R14, switching device K1, switching device K2, switching device K3, derailing switch
Part K4, control signal SC1, control signal SC2, switch S1, switch S2, switch S3, switch S4 and antenna ANT, wherein, the hair
It penetrates drain electrodes of the end TX respectively with the source electrode of the transistor M1 and the transistor M2 to be connected, the grid of the transistor M1 passes through
The resistance R1 is connected with positive pole, and the base stage of the transistor M1 is grounded by the resistance R2, the transistor M1's
Source electrode is grounded and is connected by the resistance R3 with positive pole respectively, the grid of the transistor M2 by the resistance R4 with
Positive pole connects, and the base stage of the transistor M1 is grounded by the resistance R5, and the source electrode of the transistor M1 is grounded respectively
And be connected by the resistance R6 with positive pole, the source electrode of the transistor M1 is connected with one end of the switching device K1,
The other end of the switching device K1 by the switching device K2 respectively with one end of the switching device K3 and the antenna
ANT connections, the other end of the switching device K3 are connected with one end of the switching device K4, and the switching device K4's is another
End is connected with the source electrode of the transistor M3, and described open has been arranged in series between the switching device K2 and the switching device K3
The S1 and switch S2 is closed, the switch S3 and described has been arranged in series between the switching device K1 and the switching device K4
S4 is switched, is connected between the switch S1 and the switch S2 by the resistance R7 with one end of the resistance R8, the electricity
It hinders and is connected between the other end of R8 and the switch S3 and the switch S4, also, between the resistance R7 and the resistance R8
Be provided with the control signal SC1 and the control signal SC2, the switch S1 and the switch S3 respectively with the control
Signal SC1 connections, the switch S2 and the switch S4 are connected respectively with the control signal SC2, the transistor M3's
Grid is connected by the resistance R9 with positive pole, and the base stage of the transistor M3 is grounded by the resistance R10, the crystalline substance
The source electrode of body pipe M3 is grounded and is connected by the resistance R11 with positive pole respectively, the drain electrode of the transistor M3 respectively with
The base stage of the transistor M4 and the receiving terminal RX connections, the grid of the transistor M4 pass through the resistance R14 and power supply
Anode connects, and the base stage of the transistor M4 is grounded by the resistance R12, and the source electrode of the transistor M4 is grounded and leads to respectively
The resistance R13 is crossed to be connected with positive pole.
Further, the transistor M1 and transistor M2, the transistor M3 and the transistor M4 are
NMOS transistor.
Further, the transistor M1 and the transistor M2 sizes are 0.18 μm.
Further, the transistor M3 sizes are 200 μm, and the transistor M4 sizes are 96 μm.
Further, the resistance R1 and resistance R2, the resistance R3, the resistance R4, the resistance R5, described
Resistance R6, the resistance R9, the resistance R10, the resistance R11, the resistance R12, the resistance R13 and the resistance
R14 resistance values are 9K ohm.
Further, the switching device K1 and switching device K2, the switching device K3 and the switching device
K4 is field-effect transistor.
Beneficial effects of the present invention are：On-off circuit is shared by a kind of resistance provided according to the present invention, it is and traditional
It is compared with similar performance with the on-off circuit of operation, while on-off circuit normal operation is ensured, the electricity that is included in chip
The quantity of resistance halves, therefore can provide the useful effect of chip size reduction, so that the size of electronic equipment is able to reality
It now minimizes, and then improves electronic equipment manufacturing level, and then realize the progress of science and technology.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structure diagram that a kind of resistance according to embodiments of the present invention shares on-off circuit.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art's all other embodiments obtained belong to what the present invention protected
Scope.
According to an embodiment of the invention, provide a kind of resistance and share on-off circuit.
As shown in Figure 1, resistance according to embodiments of the present invention shares on-off circuit, including transmitting terminal TX, receiving terminal RX, crystalline substance
Body pipe M1, transistor M2, transistor M3, transistor M4, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6,
Resistance R7, resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, switching device K1, switch
Device K2, switching device K3, switching device K4, control signal SC1, control signal SC2, switch S1, switch S2, switch S3, open
S4 and antenna ANT is closed, wherein, the transmitting terminal TX connects respectively with the drain electrode of the source electrode of the transistor M1 and the transistor M2
It connects, the grid of the transistor M1 is connected by the resistance R1 with positive pole, and the base stage of the transistor M1 passes through described
Resistance R2 is grounded, and the source electrode of the transistor M1 is grounded and is connected by the resistance R3 with positive pole, the crystal respectively
The base stage that the grid of pipe M2 is connected the transistor M1 by the resistance R4 with positive pole is grounded by the resistance R5, institute
The source electrode for stating transistor M1 is grounded and is connected by the resistance R6 with positive pole respectively, the source electrode of the transistor M1 and institute
State one end connection of switching device K1, the other end of the switching device K1 by the switching device K2 respectively with the switch
One end of device K3 and the antenna ANT connections, the other end of the switching device K3 and one end of the switching device K4 connect
It connects, the other end of the switching device K4 is connected with the source electrode of the transistor M3, the switching device K2 and the derailing switch
The switch S1 and switch S2 has been arranged in series between part K3, has been gone here and there between the switching device K1 and the switching device K4
Connection is provided with the switch S3 and switch S4, the switch S1 and it is described switch between S2 by the resistance R7 with it is described
It is connected between one end connection of resistance R8, the other end of the resistance R8 and the switch S3 and the switch S4, also, it is described
It is provided with the control signal SC1 and the control signal SC2 between resistance R7 and the resistance R8, the switch S1 and described
Switch S3 respectively be connected with the control signal SC1, it is described switch S2 and it is described switch S4 difference with the control signal
SC2 connections, the grid of the transistor M3 are connected by the resistance R9 with positive pole, and the base stage of the transistor M3 passes through
The resistance R10 ground connection, the source electrode of the transistor M3 are grounded and are connected by the resistance R11 with positive pole, institute respectively
The drain electrode for stating transistor M3 is connected respectively with the base stage of the transistor M4 and the receiving terminal RX, the grid of the transistor M4
It is connected by the resistance R14 with positive pole, the base stage of the transistor M4 is grounded by the resistance R12, the crystal
The source electrode of pipe M4 is grounded and is connected by the resistance R13 with positive pole respectively.
In one embodiment, the transistor M1 and the transistor M2, the transistor M3 and the transistor M4
It is NMOS transistor.
In one embodiment, the transistor M1 and the transistor M2 sizes are 0.18 μm.
In one embodiment, the transistor M3 sizes are 200 μm, and the transistor M4 sizes are 96 μm.
In one embodiment, the resistance R1 and the resistance R2, the resistance R3, the resistance R4, the resistance
R5, the resistance R6, the resistance R9, the resistance R10, the resistance R11, the resistance R12, the resistance R13 and institute
It is 9K ohm to state resistance R14 resistance values.
In one embodiment, the switching device K1 and switching device K2, the switching device K3 and described open
It is field-effect transistor to close device K4.
In conclusion by means of the above-mentioned technical proposal of the present invention, shared by a kind of resistance provided according to the present invention
On-off circuit compared with traditional on-off circuit with similar performance and operation, is ensureing the same of on-off circuit normal operation
When, the quantity of the resistance included in chip halves, therefore can provide the useful effect of chip size reduction, so that electronics
The size of equipment is achieved miniaturization, and then improves electronic equipment manufacturing level, and then realizes the progress of science and technology.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modifications, equivalent replacements and improvements are made should all be included in the protection scope of the present invention god.
Claims (6)
1. a kind of resistance shares on-off circuit, which is characterized in that including transmitting terminal TX, receiving terminal RX, transistor M1, transistor
M2, transistor M3, transistor M4, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8,
Resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, switching device K1, switching device K2, switching device
K3, switching device K4, control signal SC1, control signal SC2, switch S1, switch S2, switch S3, switch S4 and antenna ANT,
In, drain electrodes of the transmitting terminal TX respectively with the source electrode of the transistor M1 and the transistor M2 is connected, the transistor M1
Grid be connected by the resistance R1 with positive pole, the base stage of the transistor M1 is grounded by the resistance R2, described
The source electrode of transistor M1 is grounded and is connected by the resistance R3 with positive pole respectively, and the grid of the transistor M2 passes through institute
It states resistance R4 to be connected with positive pole, the base stage of the transistor M1 is grounded by the resistance R5, the source of the transistor M1
Pole is grounded and is connected by the resistance R6 with positive pole respectively, and the source electrode of the transistor M1 is with the switching device K1's
One end connects, the other end of the switching device K1 by the switching device K2 respectively with one end of the switching device K3 and
The antenna ANT connections, the other end of the switching device K3 are connected with one end of the switching device K4, the switching device
The other end of K4 is connected with the source electrode of the transistor M3, is arranged in series between the switching device K2 and the switching device K3
There is the switch S1 and switch S2, the switch has been arranged in series between the switching device K1 and the switching device K4
Connected between the S3 and switch S4, the switch S1 and the switch S2 by one end of the resistance R7 and resistance R8
It connects, is connected between the other end of the resistance R8 and the switch S3 and the switch S4, also, the resistance R7 and the electricity
Be provided with the control signal SC1 and the control signal SC2 between resistance R8, the switch S1 and the switch S3 respectively with
The control signal SC1 connections, the switch S2 and the switch S4 are connected respectively with the control signal SC2, the crystalline substance
The grid of body pipe M3 is connected by the resistance R9 with positive pole, and the base stage of the transistor M3 is connect by the resistance R10
Ground, the source electrode of the transistor M3 are grounded and are connected by the resistance R11 with positive pole respectively, the leakage of the transistor M3
Pole is connected respectively with the base stage of the transistor M4 and the receiving terminal RX, and the grid of the transistor M4 passes through the resistance
R14 is connected with positive pole, and the base stage of the transistor M4 is grounded by the resistance R12, the source electrode point of the transistor M4
It Jie Di and be connected by the resistance R13 with positive pole.
2. a kind of resistance according to claim 1 shares on-off circuit, which is characterized in that the transistor M1 and the crystalline substance
Body pipe M2, the transistor M3 and the transistor M4 are NMOS transistor.
3. a kind of resistance according to claim 1 shares on-off circuit, which is characterized in that the transistor M1 and the crystalline substance
Body pipe M2 sizes are 0.18 μm.
4. a kind of resistance according to claim 1 shares on-off circuit, which is characterized in that the transistor M3 sizes are
200 μm, the transistor M4 sizes are 96 μm.
5. a kind of resistance according to claim 1 shares on-off circuit, which is characterized in that the resistance R1 and the resistance
R2, the resistance R3, the resistance R4, the resistance R5, the resistance R6, the resistance R9, the resistance R10, the electricity
It is 9K ohm to hinder R11, the resistance R12, the resistance R13 and the resistance R14 resistance values.
6. a kind of resistance according to claim 1 shares on-off circuit, which is characterized in that the switching device K1 and described
Switching device K2, the switching device K3 and the switching device K4 are field-effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711207415.6A CN108111154A (en) | 2017-11-27 | 2017-11-27 | A kind of resistance shares on-off circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711207415.6A CN108111154A (en) | 2017-11-27 | 2017-11-27 | A kind of resistance shares on-off circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108111154A true CN108111154A (en) | 2018-06-01 |
Family
ID=62207866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711207415.6A Pending CN108111154A (en) | 2017-11-27 | 2017-11-27 | A kind of resistance shares on-off circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108111154A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882498A (en) * | 2011-07-13 | 2013-01-16 | 三星电机株式会社 | Resistor-sharing switching circuit |
| CN104935316A (en) * | 2014-03-21 | 2015-09-23 | 博通集成电路（上海）有限公司 | Radio frequency switch used for controlling sending and receiving path switching, radio frequency system and operation method |
| CN105811947A (en) * | 2014-12-31 | 2016-07-27 | 上海摩波彼克半导体有限公司 | Radio frequency switch and multipath output selector |
| CN105915203A (en) * | 2016-04-07 | 2016-08-31 | 杭州中科微电子有限公司 | Full CMOS single-pole double-throw switch circuit |
-
2017
- 2017-11-27 CN CN201711207415.6A patent/CN108111154A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882498A (en) * | 2011-07-13 | 2013-01-16 | 三星电机株式会社 | Resistor-sharing switching circuit |
| CN104935316A (en) * | 2014-03-21 | 2015-09-23 | 博通集成电路（上海）有限公司 | Radio frequency switch used for controlling sending and receiving path switching, radio frequency system and operation method |
| CN105811947A (en) * | 2014-12-31 | 2016-07-27 | 上海摩波彼克半导体有限公司 | Radio frequency switch and multipath output selector |
| CN105915203A (en) * | 2016-04-07 | 2016-08-31 | 杭州中科微电子有限公司 | Full CMOS single-pole double-throw switch circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1638186B (en) | High frequency switch device | |
| CN108063627A (en) | Radio-frequency receiving-transmitting switchs | |
| CN105049016B (en) | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more | |
| TWI536738B (en) | Rf switch with complementary switching devices | |
| CN105049015A (en) | Single-pole single-throw radio-frequency switch as well as single-pole double-throw radio-frequency switch and single-pole multi-throw radio-frequency switch both formed by use of single-pole single-throw radio-frequency switch | |
| US20150381168A1 (en) | High frequency switching circuit | |
| CN111865283B (en) | High power radio frequency switch with low leakage current and low insertion loss | |
| CN102882498B (en) | Resistance shares switching circuit | |
| CN205017288U (en) | Single pole single throw RF switch and RF switch is thrown to single -pole double throw RF switch and hilted broadsword that constitute more thereof | |
| CN105811947B (en) | RF switch and demultiplexer | |
| JP5335963B2 (en) | RF antenna switch circuit, high frequency antenna component, and mobile communication device | |
| US9244478B2 (en) | Local voltage control for isolated transistor arrays | |
| CN108111154A (en) | A kind of resistance shares on-off circuit | |
| CN104702315B (en) | A kind of carrier communication circuit and electronic equipment | |
| CN106470014B (en) | The output impedance matching networks of circuit are prevented with harmonic wave | |
| US10672877B2 (en) | Method of boosting RON*COFF performance | |
| CN206389343U (en) | The antenna assignment switch of Doppler VHF omnirange | |
| JP2004172729A (en) | Switching circuit for antenna transmission/reception | |
| CN106100626A (en) | The flip-chip radio-frequency (RF) switch of a kind of low-loss high isolation and mobile terminal thereof | |
| CN100388489C (en) | Switch circuit | |
| CN205921571U (en) | High face down chip RF switch of keeping apart of low -loss and mobile terminal thereof | |
| CN206401523U (en) | SPiN diode restructural plasma sleeve-dipole antennas | |
| CN104506148A (en) | Radio frequency power amplifier | |
| CN105450190B (en) | Electronic tube power amplifier circuit that is single-ended and recommending double structure | |
| KR20130119095A (en) | Apparatus of frequency controlling and having improved isolation feature |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180601 |