CN108109978A - For encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding - Google Patents
For encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding Download PDFInfo
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- CN108109978A CN108109978A CN201711170210.5A CN201711170210A CN108109978A CN 108109978 A CN108109978 A CN 108109978A CN 201711170210 A CN201711170210 A CN 201711170210A CN 108109978 A CN108109978 A CN 108109978A
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- Prior art keywords
- silver powder
- solder
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- composite solder
- glass dust
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/8321—Applying energy for connecting using a reflow oven
- H01L2224/83211—Applying energy for connecting using a reflow oven with a graded temperature profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Die Bonding (AREA)
Abstract
For encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding, which is mixed in a certain ratio by three kinds of silver powder, glass dust, organic carrier ingredients, and specific preparation method includes：（1）The preparation of silver powder,（2）The preparation of glass dust,（3）The preparation of organic carrier,（4）The preparation of solder.The composite solder of the present invention can make to reach thermally matched between base of ceramic and composite solder, composite solder and silicon chip in sintering process, reduce the thermal stress that chip is subject to, and then solve the problems, such as because of the thermal mismatching of storeroom chip to be caused to burst apart.With the exception of this, also there is high heat conductance, high heat resisting temperature, high adhesion force, high reliability, sintering temperature and low, low cost；And nano level glass dust and silver powder have the characteristics that surface area is big, interface performance is good, improve the adhesive property of solder.It is mainly used in ceramic encapsulated ic die bonding.
Description
Technical field
The present invention relates to welding, are directed to welding material more particularly to semiconductor integrated circuit chip bonding solder.
Background technology
With semiconductor integrated circuit to high-power, high-performance, High Density Packaging, high reliability and low cost direction send out
Exhibition, the requirement to chip packaging technology are higher and higher.But since integrated circuit integrated level increases substantially, electronic device caloric value
It steeply rises, be easy to cause thermal stress and concentrate and cause chip torsional deformation or even failure of bursting apart.It is therefore desirable to die bonding
Material has that sintering temperature is low, thermal conductivity is good and linear expansion coefficient low performance, to avoid chip because bursting apart during excessive thermal stress
Failure.
At present, the chip of ceramic package adhesive integrated circuit is mainly bonded using conducting resinl or low-temperature sintering glass dust.
Since conducting resinl is easy to aging low with adhesive force, it is impossible to meet the high reliability of die bonding, and the thermal expansion of glass dust and ceramics
Coefficient difference is larger, easily generates excessive thermal stress, and chip is caused to deform or burst apart.
There are many application part of silver solder involved in Chinese patent database.Such as:No. 2011103969456《It is a kind of new
Composite solder》, No. 2012100408647《Semiconductor package part with the controllable solder joint region of silver content》、
No. 2012100075193《For the high temperature resistant solder of high power semiconductor lasers array and folded battle array》, No. 2012102816814
《A kind of silver solder and preparation method thereof》, No. 2014104680432《A kind of composite solder》With No. 2016104616172《Silver
Cored solder and preparation method thereof》Deng.Solder in these patented technologies can no doubt solve the weldering of some elements, device and equipment
Demand is connect, however so far, it there is no the patent application for being related to ceramic package based semiconductor bond integrated circuit chips solder.
The content of the invention
The present invention is intended to provide for encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding, existing core is overcome
Piece adhesives there are the defects of, constituent material CTE gradients are burst apart so as to prevent semiconductor chip when thermally stressed excessive
Failure.
Composite solder provided by the invention be mixed in a certain ratio by three kinds of silver powder, glass dust, organic carrier ingredients and
Into；The effect of silver powder is heat conduction and conduction；Glass dust sintering when from cementation, be conducive to form netted group with silver conductor
It knits, and adjusts the coefficient of expansion of solder；Organic carrier ensures the wellability and levelability of solder；Specific preparation method includes：
(1) preparation of silver powder
Using the silver powder that purity is 99.95%, flake silver powder and spherical silver powder are prepared respectively；Spherical silver powder discharging grain size
It is prepared for nanometer pulverizer, flake silver powder carries out spherical silver powder ball milling using ball mill, and ball mill used is planet ball
Grinding machine and abrading-ball are zirconium oxide balls, obtain flake silver powder grain size as 50nm~80nm, the grain size of spherical silver powder for 20nm~
50nm is nanoscale；Coefficient of thermal expansion is about 16.2 × 10-6/℃；Then by the flake silver powder produced and spherical silver powder by 7:
3 weight ratio is mixed, and the nano-scale silver powder mixture of composition is spare；
(2) preparation of glass dust
Using containing 90%PbO, containing 10% H3BO3、Al2O3、SiO2And BaO, coefficient of thermal expansion are about 4.5 × 10-6/℃
Glass dust, ground 20h~30h with grinder, until its grain size is 70nm~100nm, it is spare to obtain qualified glass dust；
(3) preparation of organic carrier
The use of terpinol is primary solvent, adds in ethyl cellulose, absolute ethyl alcohol, rilanit special respectively as levelling
Agent, surfactant and thixotropic agent are mixed according to 94: 2: 2: 2 weight percent, heated in 80 DEG C of water-bath, and stirring is equal
It is even, it after natural cooling, is sealed with Brown Glass Brown glass bottles and jars only spare, prevents illumination effect to material property；
(4) preparation of solder
Glass dust and silver powder are ground into 2h~3h by 4: 1 weight ratio grinder first, are mixed into homogeneous solid powder,
Then the solid powder and organic carrier are stirred into 1h~2h by 9: 1 weight ratio mixer, until mixture is in thick
State and with mobility to get being sealed to composite solder, then by composite solder with anti-oxidant polymeric material bottle, be placed in -5 DEG C
In ± 2 DEG C of refrigerator-freezer, in case using.
In (1) step of the above method, the process conditions of the ball milling are：Ball material weight ratio is 3: 1, and dispersant is anhydrous
Ethyl alcohol, rotating speed 200r/min, Ball-milling Time are 16h~18h.
In (4) step of the above method, the solid powder should be sealed using the amount of every bag of 100g in relative humidity as
30% ± 5%, temperature is in 25 DEG C ± 5 DEG C of environment.
Measuring and calculating to solder performance：
The a certain performance of composite solder ingredient follows the hybrid operation rule of multiplication and addition, by taking the coefficient of expansion as an example：α
=p1α1+p2α2；
It is respectively the weight percent of ingredient 1 and ingredient 2 in formula；
α, α1, α2The respectively coefficient of expansion of composite solder, ingredient 1 and ingredient 2；
The coefficient of expansion is calculated according to the silver powder, glass dust, organic carrier weight ratio used：
The coefficient of expansion=80% × 4.5 × 10-6/ DEG C+20% × 16.2 × 10-6/ DEG C=6.84 × 10-6/℃。
The coefficient of thermal expansion of known ceramics pedestal is about 8.0 × 10-6/ DEG C, the coefficient of thermal expansion of composite solder is about 6.84
×10-6/ DEG C, the coefficient of thermal expansion of silicon chip is about 6.0 × 10-6/ DEG C, it is known that the CTE gradients that three tapers off from the bottom to top.
In sintering process, this CTE gradient makes to reach thermally matched between base of ceramic and composite solder, composite solder and silicon chip,
Reduce the thermal stress that chip is subject to, and then solve the problems, such as because of the thermal mismatching of storeroom chip to be caused to burst apart.
Solder of the present invention except its coefficient of thermal expansion and pedestal and chip reach it is thermally matched in addition to, also with high heat conductance,
The advantages that high heat resisting temperature, high adhesion force, high reliability, sintering temperature and low, low cost；And nano level glass dust and silver powder
Have the characteristics that surface area is big, interface performance is good, improve the adhesive property of solder.It is mainly used in ceramic encapsulated ic
Die bonding.
Description of the drawings
Fig. 1 is sintering temperature curve figure.
Specific embodiment
Embodiment
The die bonding solder for ceramic encapsulated ic DIP type FX200 products is prepared, which is
3.04mm×2.76mm。
Using the silver powder that purity is 99.95%, flake silver powder and spherical silver powder are prepared respectively；Then by the sheet produced silver
Powder and spherical silver powder are mixed by 7: 3 weight ratio, and silver powder mixture is spare；Using containing 90%PbO, containing 10% H3BO3、
Al2O3、SiO2And BaO, coefficient of thermal expansion are about 4.5 × 10-6/ DEG C glass dust, 20h will be ground with ball mill, until its grain size is
It is spare to obtain qualified glass dust by 80nm~100nm；With terpinol, ethyl cellulose, absolute ethyl alcohol, rilanit special according to
94: 2: 2: 2 weight percent mixing, heats in 80 DEG C of water-bath, stirs evenly, after natural cooling, use Brown Glass Brown glass bottles and jars only
It is sealed, it is spare；
80g glass dust, 20g silver powder are taken, is put into grinder and grinds 2h；90g hybrid solid powder is taken out, it is organic with 10g
Carrier is poured into bottle, is put into blender and stirred 1h, and bottle is taken out in mixer, and taking-up 10g solders are to be installed in bottle,
Remaining is put back in refrigerator-freezer；The composite solder point is applied to pedestal geometric center with glue stick, then loads onto chip by direction, is ensured
Chip is smooth and four meet personally glue.After the assay was approved, it is sintered by following process conditions and sintering temperature curve figure：Furnace temperature
30min is started to warm up from room temperature to 170 DEG C, constant temperature 60min；Subsequent 10min is warming up to 250 DEG C, constant temperature 30min, then 30min
430 DEG C are warming up to, constant temperature 10min is finally cooled down with stove.
Screening test, screening conditions and method are sent after completing the processes such as bonding, sealing cap：1st step -65 DEG C it is (cold) stop not
Less than 10min, the 2nd step stops 150 DEG C (heat) and is no less than 10min, continuously performs the 1st step and is cycled for 20 with the 2nd step, cold and hot turn
Changing the time must not exceed 1min.After the completion of last time cycles, do not amplify or amplify and sample mark is examined no more than 3 times
It looks into, 10 times~20 times of amplification carries out visual inspection to shell, lead or sealing, and 50 times~100 times of amplification checks chip surface.
The defects of chip, shell, lead or sealing or damage sign or mark are fuzzy, are judged to fail.Number of test specimens is
100, failure quantity is 0.
This embodiment illustrates that the composite solder prepared with this technique, which is applied to ceramic encapsulated ic chip, to be had very well
Adhesive property, constituent material CTE gradients have prevented semiconductor chip and have burst apart failure accidents.
Claims (3)
1. for encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding, it is characterised in that the composite solder be by
Three kinds of silver powder, glass dust, organic carrier ingredients are mixed in a certain ratio, and specific preparation method includes：
（1）The preparation of silver powder
Using the silver powder that purity is 99.95%, flake silver powder and spherical silver powder are prepared respectively；Spherical silver powder discharging grain size is to receive
Prepared by meter level pulverizer, flake silver powder carries out spherical silver powder ball milling using ball mill, and ball mill used is planetary ball mill
It is zirconium oxide balls with abrading-ball, obtains flake silver powder grain size as 50nm~80nm, the grain size of spherical silver powder is 20nm~50nm,
For nanoscale；Coefficient of thermal expansion is about 16.2 × 10-6/℃；Then by the flake silver powder produced and spherical silver powder by 7: 3 weight
Than being mixed, the nano-scale silver powder mixture of composition is spare；
（2）The preparation of glass dust
Using containing 90% PbO, containing 10% H3BO3、Al2O3、SiO2And BaO, coefficient of thermal expansion are about 4.5 × 10-6/ DEG C glass
Powder is ground 20h~30h with grinder, until its grain size is 70nm~100nm, it is spare to obtain qualified glass dust；
（3）The preparation of organic carrier
The use of terpinol is primary solvent, adds in ethyl cellulose, absolute ethyl alcohol, rilanit special respectively as levelling agent, table
Face activating agent and thixotropic agent mix according to 94: 2: 2: 2 weight percent, heat, stir evenly in 80 DEG C of water-bath, treat
It after natural cooling, is sealed with Brown Glass Brown glass bottles and jars only spare, prevents illumination effect to material property；
（4）The preparation of solder
Glass dust and silver powder are ground into 2h~3h by 4: 1 weight ratio grinder first, are mixed into homogeneous solid powder, then
The solid powder and organic carrier are stirred into 1h~2h by 9: 1 weight ratio mixer, until mixture in viscous pasty state and
It is sealed with mobility to get to composite solder, then by composite solder with anti-oxidant polymeric material bottle, is placed in -5 DEG C ± 2
DEG C refrigerator-freezer in, in case use.
2. composite solder as described in claim 1, it is characterised in that the（1）In step, the process conditions of the ball milling are：Ball material
Weight ratio is 3: 1, and dispersant is absolute ethyl alcohol, and 200 r/min of rotating speed, Ball-milling Time is 16h~18h.
3. composite solder as described in claim 1, it is characterised in that the（4）In step, the solid powder should be with every bag of 100g
Amount to be sealed in relative humidity be in the environment that 30% ± 5%, temperature is 25 DEG C ± 5 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711170210.5A CN108109978A (en) | 2017-11-22 | 2017-11-22 | For encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711170210.5A CN108109978A (en) | 2017-11-22 | 2017-11-22 | For encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding |
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| CN108109978A true CN108109978A (en) | 2018-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711170210.5A Pending CN108109978A (en) | 2017-11-22 | 2017-11-22 | For encapsulating the nano silver-group composite solder of adhesive integrated circuit die bonding |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109604859A (en) * | 2018-11-30 | 2019-04-12 | 湖南人文科技学院 | Preparation method, ceramics and its packaging method of the solder paste of ceramic package |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186314A (en) * | 1996-12-24 | 1998-07-01 | 广东肇庆风华电子工程开发有限公司 | Slurry for silver leads of surface installed multi-layer disc ceramic capacitor |
| CN101246760A (en) * | 2008-02-27 | 2008-08-20 | 中南大学 | Low-temperature sintering type conductive slurry based on semiconductor chip agglutination and its manufacturing technique |
| CN102262916A (en) * | 2011-07-19 | 2011-11-30 | 彩虹集团公司 | Front silver paste for crystalline silicon solar cell and preparation method |
| CN102354545A (en) * | 2011-10-27 | 2012-02-15 | 浙江光达电子科技有限公司 | Sliver electrode slurry for back electric field of silicon solar cell and preparation method thereof |
-
2017
- 2017-11-22 CN CN201711170210.5A patent/CN108109978A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186314A (en) * | 1996-12-24 | 1998-07-01 | 广东肇庆风华电子工程开发有限公司 | Slurry for silver leads of surface installed multi-layer disc ceramic capacitor |
| CN101246760A (en) * | 2008-02-27 | 2008-08-20 | 中南大学 | Low-temperature sintering type conductive slurry based on semiconductor chip agglutination and its manufacturing technique |
| CN102262916A (en) * | 2011-07-19 | 2011-11-30 | 彩虹集团公司 | Front silver paste for crystalline silicon solar cell and preparation method |
| CN102354545A (en) * | 2011-10-27 | 2012-02-15 | 浙江光达电子科技有限公司 | Sliver electrode slurry for back electric field of silicon solar cell and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109604859A (en) * | 2018-11-30 | 2019-04-12 | 湖南人文科技学院 | Preparation method, ceramics and its packaging method of the solder paste of ceramic package |
| CN109604859B (en) * | 2018-11-30 | 2021-07-23 | 湖南人文科技学院 | Preparation method of solder paste for ceramic packaging, ceramic and packaging method thereof |
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Application publication date: 20180601 |