CN108108848A - The training method of ratio of defects prediction model, apparatus and system - Google Patents

The training method of ratio of defects prediction model, apparatus and system Download PDF

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CN108108848A
CN108108848A CN201711478609.XA CN201711478609A CN108108848A CN 108108848 A CN108108848 A CN 108108848A CN 201711478609 A CN201711478609 A CN 201711478609A CN 108108848 A CN108108848 A CN 108108848A
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semiconductor chip
sample data
defects
history
ratio
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CN108108848B (en
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经晶
刘倩
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Intel Products Chengdu Co Ltd
Intel Corp
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Abstract

The application provides a kind of method of the defects of being used to train the first semiconductor chip process units in semiconductor chip production process rate prediction model, including:One or more most suitable Prediction Parameters are selected from the parameter set for the sample data that the history semiconductor chip sample data of the first semiconductor chip process units is concentrated using Logic Regression Models;And using it is selected go out one or more be most suitable for the parameter value of Prediction Parameters and train ratio of defects prediction model, the rate the defects of semiconductor chip that the ratio of defects prediction model is produced for one or more the second semiconductor chip process units for predicting positioned at the first semiconductor chip process units downstream.Using this method, rate prediction model the defects of for being used at the first semiconductor chip process units can be trained, it is possible thereby to when realizing that rate is more than predetermined threshold predict the defects of, defect maintenance processing is carried out to the first semiconductor chip process units in time.

Description

The training method of ratio of defects prediction model, apparatus and system
Technical field
The application is usually directed to semiconductor chip packaging field, more particularly, to for semiconductor chip to be trained to produce The defects of the first semiconductor chip process units in the process rate prediction model method and device and for improving semiconductor The defects of chip rate method and system.
Background technology
Semiconductor chip packaging technique usually requires to complete by a series of production procedures.Specifically, crystalline substance is being received After circle, crystal column surface pad pasting, wafer reverse side grinding, wafer rear polishing, wafer are carried out in the front end of chip package factory first Back side pad pasting, crystal column surface striping, wafer-baking, wafer cut, checked after cutting after cleaning, wafer cutting, ultraviolet light irradiates, It is checked after wafer bonding, elargol curing, wire bonding, wire bonding;Then plastic packaging, modeling are carried out in the rear end of chip package factory It is honored as a queen baking after curing, positive print, back of the body print, rib cutting, plating, plating, Trim Molding, whole survey, pin inspection, final visual inspection, finally The processes such as quality control, baking dry, pack, shipment inspection, storage are packaged and test to chip, and final shipment is to visitor Family.
In general, above-mentioned operation is completed using production line.Semiconductor core there are many being set on generation assembly line Piece process units, each semiconductor chip process units correspond to one or more packaging technologies.In production, each semiconductor core Piece process units obtains pending semiconductor core flake products and to being obtained from the semiconductor chip process units of trip disposed thereon The semiconductor core flake products taken are handled, then by treated semiconductor core flake products are transmitted to partly leading downstream Body chip production device is further processed.
In production, if since a kind of semiconductor chip process units breaks down and causes produced semiconductor core There is defect in flake products, and this defective semiconductor core flake products of band can be sent to another semiconductor core downstream Piece process units is handled, and defect inspection is being carried out in the inspection of chip package factory rear end and test step It looks into.This means the detection for the problem in a kind of above-mentioned semiconductor chip process units be not it is real-time, by It is carried out continuously in the production of pipeline system, so as to cause to generate substantial amounts of faulty goods, so that semiconductor chip Yields substantially reduces.In addition, in actual production, the semiconductor chip process units for checking and testing all is only to work as The semiconductor chip of pre-treatment carries out defect inspection, so as to judge whether semiconductor chip is qualified, can't be lacked what is found The semiconductor chip process units that notice is fallen into trip disposed thereon carries out device maintenance in real time, so as to cause semiconductor core Piece yields is improved.
The content of the invention
In view of the above problems, this application provides a kind of for training the first semiconductor in semiconductor chip production process The defects of chip production device rate prediction model method and device and the defects of for improving semiconductor chip rate method And system.It, can the history semiconductor chip sample based on the first semiconductor chip process units using this method, apparatus and system Notebook data collection predicts mould come rate prediction model the defects of training the first semiconductor chip process units using the ratio of defects Type, one or more second semiconductor chip process units of the prediction positioned at the first semiconductor chip process units downstream are produced Semiconductor chip the defects of rate whether be more than predetermined threshold, to first when then rate is more than predetermined threshold predict the defects of Semiconductor chip process units carries out defect maintenance processing, so as to improve semiconductor chip yields.
According to the one side of the application, provide a kind of for training the first half in semiconductor chip production process to lead The defects of body chip production device rate prediction model method, including:Using Logic Regression Models come from first semiconductor One or more are selected in the parameter set for the sample data that the history semiconductor chip sample data of chip production device is concentrated It is most suitable for Prediction Parameters;And one gone out selected by the sample data concentrated using the history semiconductor chip sample data Kind or the parameter values of a variety of most suitable Prediction Parameters train the ratio of defects prediction model, the ratio of defects prediction model is used for One or more second semiconductor chip process units of the prediction positioned at the first semiconductor chip process units downstream is given birth to The defects of semiconductor chip of output rate.
Preferably, in an example of above-mentioned aspect, the first semiconductor chip process units can be semiconductor Chip attachment device, one or more of second semiconductor chip process units are curable epoxide devices and described partly lead The defects of body chip, rate was protrusion of surface ratio of defects.
Preferably, in an example of above-mentioned aspect, using what the history semiconductor chip sample data was concentrated The one or more gone out selected by sample data are most suitable for the parameter value of Prediction Parameters to train the ratio of defects prediction model Before, the history semiconductor chip sample data set based on the first semiconductor chip process units trains the ratio of defects pre- Surveying model can also include:Data prediction is carried out to the sample data that the history semiconductor chip sample data is concentrated;With And it is most suitable for using the one or more gone out selected by the sample data of history semiconductor chip sample data concentration pre- The parameter value of parameter is surveyed to train the ratio of defects prediction model that can include:It is partly led using the history after data prediction The one or more gone out selected by the sample data that body chip sample data is concentrated are most suitable for the parameter value of Prediction Parameters to instruct Practice the ratio of defects prediction model.
Preferably, in an example of above-mentioned aspect, using Logic Regression Models come from the parameter set of sample data Selecting one or more most suitable Prediction Parameters can include:Using L1 regularizations Logic Regression Models and L2 regularization logics The combination of regression model is most suitable for Prediction Parameters to select one or more from the parameter set of sample data.
Preferably, in an example of above-mentioned aspect, using what the history semiconductor chip sample data was concentrated The one or more gone out selected by sample data are most suitable for the parameter value of Prediction Parameters to train the ratio of defects prediction model Before, the history semiconductor chip sample data set based on the first semiconductor chip process units trains the ratio of defects pre- Surveying model can also include:Randomization is carried out to the sample data that the history semiconductor chip sample data is concentrated, with And it is most suitable for using the one or more gone out selected by the sample data of history semiconductor chip sample data concentration pre- The parameter value of parameter is surveyed to train the ratio of defects prediction model that can include:It is partly led using the history after randomization The one or more gone out selected by the sample data that body chip sample data is concentrated are most suitable for the parameter value of Prediction Parameters to instruct Practice the ratio of defects prediction model.
Preferably, in an example of above-mentioned aspect, to the sample of history semiconductor chip sample data concentration Data, which carry out data prediction, to be included:The bad sample data concentrated to the history semiconductor chip sample data carried out Sampling processing, to expand the bad sample data in the history semiconductor chip data set.
Preferably, in an example of above-mentioned aspect, to the sample of history semiconductor chip sample data concentration Data, which carry out randomization, to be included:The sample data that the history semiconductor chip sample data is concentrated is carried out again It shuffles;Sample data after reshuffling is separated into multiple subclass;And select predetermined ratio from each subclass Sample data composition test sample collection, and by remaining sample data form training sample set.
According to another aspect, a kind of method for the defects of improving semiconductor chip rate is provided, including:Utilize defect Rate prediction model come predict positioned at the first semiconductor chip process units downstream the second semiconductor chip of one or more production The defects of semiconductor chip that device is produced rate whether be more than predetermined threshold, wherein, the ratio of defects prediction model be as The upper method training;And rate is more than the predetermined threshold predict produced semiconductor chip the defects of When, defect maintenance processing is carried out to the first semiconductor chip process units.
It is a kind of for the first semiconductor chip in semiconductor chip production process to be trained to give birth to according on the other hand, providing The device of the defects of producing device rate prediction model, including:Prediction Parameters selecting unit, for using Logic Regression Models come from institute It states and is selected in the parameter set of the sample data of the history semiconductor chip sample data concentration of the first semiconductor chip process units Go out one or more most suitable Prediction Parameters;And training unit, for using the history semiconductor chip sample data set In sample data it is selected go out one or more be most suitable for the parameter value of Prediction Parameters the ratio of defects to be trained to predict Model, the ratio of defects prediction model are located at the one or more in the first semiconductor chip process units downstream for predicting The defects of semiconductor chip that second semiconductor chip process units is produced rate.
Preferably, in an example of above-mentioned aspect, the first semiconductor chip process units can be semiconductor Chip attachment device, one or more of second semiconductor chip process units are curable epoxide devices and described partly lead The defects of body chip, rate was protrusion of surface ratio of defects.
Preferably, in an example of above-mentioned aspect, the device can also include:Data pre-processing unit is used It is most suitable in the one or more gone out selected by the sample data that the history semiconductor chip sample data is used to concentrate The parameter value of Prediction Parameters is concentrated the history semiconductor chip sample data come before training the ratio of defects prediction model Sample data carry out data prediction;And the training unit is configured as:Use the history after data prediction The one or more gone out selected by semiconductor chip sample data set are most suitable for the parameter value of Prediction Parameters to train described lack The rate of falling into prediction model.
Preferably, in an example of above-mentioned aspect, the Prediction Parameters selecting unit is configured as:Using L1 canonicals Change the combination of Logic Regression Models and L2 regularization Logic Regression Models selected from the parameter set of sample data it is a kind of or A variety of most suitable Prediction Parameters.
Preferably, in an example of above-mentioned aspect, described device can also include:Randomization unit, is used for It is most suitable in the one or more gone out selected by the sample data that the history semiconductor chip sample data is used to concentrate pre- The parameter value of parameter is surveyed before training the ratio of defects prediction model, to be concentrated to the history semiconductor chip sample data Sample data carries out randomization and the training unit is configured as:Use the history after randomization half The one or more gone out selected by conductor chip sample data set are most suitable for the parameter value of Prediction Parameters to train the defect Rate prediction model.
Preferably, in an example of above-mentioned aspect, the data pre-processing unit is configured as:To the history half The bad sample data that conductor chip sample data is concentrated carries out over-sampling processing, in the history semiconductor chip data set Bad sample data expanded.
Preferably, in an example of above-mentioned aspect, the randomization unit can include:Board module is reshuffled, Sample data for being concentrated to the history semiconductor chip sample data carries out reshuffling board;Separation module, for that will reshuffle The sample data of bridge queen is separated into multiple subclass;And selecting module, for selecting predetermined ratio from each subclass Sample data composition test sample collection, and by remaining sample data form training sample set.
According to another aspect, a kind of system for the defects of improving semiconductor chip rate is provided, including:Prediction dress It puts, for predicting the one or more second positioned at the first semiconductor chip process units downstream using ratio of defects prediction model The defects of semiconductor chip that semiconductor chip process units is produced rate whether be more than predetermined threshold, wherein, the defect Rate prediction model is method training as described above;And defect processing device, for predicting partly leading of being produced The defects of body chip rate be more than the predetermined threshold when, to the first semiconductor chip process units carry out defect maintenance at Reason.
Preferably, in an example of above-mentioned aspect, the system can also include:It is as described above to be used for training half The defects of the first semiconductor chip process units in conductor chip production process rate prediction model device.
According to the another aspect of the application, a kind of computing device is provided, including:One or more processors, memory, The memory store instruction, when described instruction is performed by one or more of processors so that one or more of Processor, which performs, is used to train as described above lacking for the first semiconductor chip process units in semiconductor chip production process The method of the rate of falling into prediction model.
According to the another aspect of the application, a kind of non-transitory machinable medium is provided, is stored with executable Instruction, described instruction cause the machine performs to be used to train in semiconductor chip production process as described above upon being performed The first semiconductor chip process units the defects of rate prediction model method.
Description of the drawings
By referring to following attached drawing, further understanding for nature and advantages in the present disclosure can be realized. In attached drawing, similar assembly or feature can have identical reference numeral.
Fig. 1 is shown according to the application for training the first semiconductor chip in semiconductor chip production process to produce The defects of device rate prediction model method flow chart;
Fig. 2 is showing for the parameter in the parameter set shown according to the sample data that defect is protruded for surface of the application The form of example;
Fig. 3 is shown to be used to select from the parameter set of sample data using Logic Regression Models according to the application The flow chart of the process of the most suitable Prediction Parameters of one or more;
Fig. 4 is the parameters in the parameter set shown according to the sample data that defect is protruded for surface of the application The form of penalty values under L1 regularizations Logic Regression Models and L2 regularization Logic Regression Models;
Fig. 5 show according to the application be used for history semiconductor chip sample data concentrate sample data carry out with The flow chart of the method for machineization processing;
Fig. 6 is shown to be used to carry out the sample data that history semiconductor chip sample data is concentrated according to the application The flow chart of the method for sampling processing;
Fig. 7 shows to train the defects of the first semiconductor chip process units in semiconductor chip production process rate The block diagram of the device of prediction model;
Fig. 8 shows an exemplary block diagram of the randomization unit according to the application;
Fig. 9 shows the flow chart of the method for rate the defects of being used to improve semiconductor chip according to the application;
Figure 10 shows the block diagram of the system of rate the defects of improving semiconductor chip according to the application;With
Figure 11 shows to train the defects of the first semiconductor chip process units in semiconductor chip production process The block diagram of the computing device of rate prediction model.
Specific embodiment
Theme described herein is discussed referring now to example embodiment.It should be understood that discuss these embodiments only It is in order to enable those skilled in the art better understood when so as to fulfill theme described herein, is not to claim Protection domain, applicability or the exemplary limitation illustrated in book.Protection domain in the present disclosure can not departed from In the case of, the function of element and arrangement discussed is changed.Each example can be as needed, omit, substitute or Add various processes or component.For example, described method can be performed according to described order different, with And each step can be added, omits or combine.In addition, the described feature of some opposite examples is in other examples It can be combined.
As used in this article, term " comprising " and its modification represent open term, are meant that " including but not limited to ". Term "based" represents " being based at least partially on ".Term " one embodiment " and " embodiment " expression " at least one implementation Example ".Term " another embodiment " expression " at least one other embodiment ".Term " first ", " second " etc. may refer to not With or identical object.It can include other definition below, it is either specific or implicit.It is unless bright in context It really indicates, otherwise the definition of a term is consistent throughout the specification.
Presently in connection with attached drawing come describe the application for check the method for leakproofness when product is sealed to carrier band, The embodiment of apparatus and system.
Fig. 1 is shown according to the application for training the first semiconductor chip in semiconductor chip production process to produce The defects of device rate prediction model method flow chart.
As shown in Figure 1, first, in S120, using Logic Regression Models come from the first semiconductor chip process units The parameter set of sample data concentrated of history semiconductor chip sample data in select and one or more be most suitable for prediction ginseng Number.For example, in one example, the first semiconductor chip process units can be surface mounting of semiconductor chips device, described The defects of second semiconductor chip process units can be curable epoxide device etc. and semiconductor chip rate is that surface is dashed forward Play ratio of defects.In other examples, the first semiconductor chip process units can be on semiconductor chip packaging assembly line Other devices or module.Here, history semiconductor chip sample data is handled by another semiconductor chip process units The historical sample data of semiconductor chip afterwards, the historical sample data include the parameter set being made of many kinds of parameters.Fig. 2 is shown The exemplary form of parameter in the parameter set of the sample data that defect is protruded for surface of the application.In addition, it goes through Also include in history sample data and be used to indicate the defects of semiconductor chip is with the presence or absence of defect indication information.
In the example of the application, Logic Regression Models can include L0 regularizations Logic Regression Models, L1 canonicals Change Logic Regression Models, L2 regularization Logic Regression Models etc..Preferably, in one example, returned according to the logic of the application Model is returned to include the combination of L1 regularizations Logic Regression Models and L2 regularization Logic Regression Models.Fig. 3 is shown according to this Shen Being used for please selects one or more most suitable Prediction Parameters using Logic Regression Models from the parameter set of sample data Process flow chart.
As shown in Figure 3, in S121, calculated using L1 regularizations Logic Regression Models in the parameter set of sample data The L1 penalty values of parameters.Then, in S123, the parameter set of sample data is calculated using L2 regularizations Logic Regression Models In parameters L2 penalty values.Fig. 4 is the ginseng for showing the sample data that defect is protruded for surface according to the application The form of penalty values of the parameters under L1 regularizations Logic Regression Models and L2 regularization Logic Regression Models in manifold.
After the L1 penalty values of parameters and L2 penalty values are calculated as above, punished in S125, the L1 for calculating parameters The weighted average of the absolute value of point penalty and L2 penalty values.Here, the weighted value of the L1 penalty values of each parameter and L2 penalty values It can preset.For example, weighted value can be set to 0.5.Then, in S127, based on the parameters calculated The weighted average of penalty values determines selected one or more most suitable Prediction Parameters.It for example, can be to being calculated Weighted average is compared with predetermined reference value, when weighted average is more than predetermined reference value, it is believed that the parameter is most suitable Close Prediction Parameters.It alternatively, can be using the maximum weighted average value that is calculated as a reference value, by its weighted average and the base Parameter of the difference of quasi- value within predetermined percentage is determined as being most suitable for Prediction Parameters.Alternatively, it can be added according to what is calculated The parameter to sort in preceding specific bit is determined as being most suitable for Prediction Parameters by weight average value to be ranked up.It is listed according in Fig. 4 The L1 penalty values of the parameters for protrusion of surface defect and L2 penalty values, calculate its weighted average and flat based on weighting Average carrys out from 20 kinds of parameters to select 7 kinds of parameters, and as most suitable Prediction Parameters, 7 kinds of parameters are:Expansion Height、Placement offset Y、HeatingTime_2、MeltingFroce_3、Heatingspeed_3、 ForceVariance_4 and MeltingSpeed_250_3.
It will be clear that shown in Fig. 3 being only to be used for according to the application using Logic Regression Models come from sample An example of one or more most suitable Prediction Parameters is selected in the parameter set of notebook data.How Logic Regression Models are used Prediction Parameters are most suitable for select one or more from the parameter set of sample data, other suitable modes can also be used It realizes, for example in S125, can be carried out based on other functional relations come the L1 penalty values to parameters and L2 penalty values Combined treatment.
After one or more most suitable Prediction Parameters are as above selected, in S140, usage history semiconductor chip sample Sample data in data set it is selected go out the parameter values of one or more parameters train the first semiconductor chip to produce The defects of device rate prediction model, the ratio of defects prediction model for predict be located at the first semiconductor chip process units The defects of semiconductor chip that one or more the second semiconductor chip process units in downstream is produced rate.Preferably, exist It, can also be to the sample of history semiconductor chip sample data concentration before training ratio of defects prediction model in one example Data carry out randomization, and the sample data that history semiconductor chip sample data is concentrated is separated into test set and training Collection.Then, one gone out selected by the sample data concentrated using the history semiconductor chip sample data after randomization The parameter value of kind or many kinds of parameters is come rate prediction model the defects of training the first semiconductor chip process units, for example, will be random The training set obtained after change processing utilizes the survey obtained after randomization for being trained to ratio of defects prediction model The defects of examination collection is come to after training rate prediction model is tested to optimize.
Fig. 5 show according to the application be used for history semiconductor chip sample data concentrate sample data carry out with One exemplary flow chart of the method for machineization processing.
As shown in figure 5, in S131, the sample data concentrated to history semiconductor chip sample data carries out reshuffling board.It is logical It crosses and sample data is carried out to reshuffle board, original order of the sample data of sample data concentration, such as sample data can be upset Generation time order, equipment order, operator order, material order etc. so that reshuffling the sample data of bridge queen more With statistical property.
Then, in S133, the sample data for reshuffling bridge queen is separated into multiple subclass.For example, it can will reshuffle bridge queen Sample data be evenly distributed in predetermined number subclass.Then, in S135, predetermined ratio is selected from each subclass The sample data composition test set of (for example, 20%), and remaining sample data is formed into training set.
Moreover it is preferred that in another example of the application, using Logic Regression Models come from first semiconductor One or more are selected in the parameter set for the sample data that the history semiconductor chip sample data of chip production device is concentrated Be most suitable for Prediction Parameters before, the method can also include to history semiconductor chip sample data concentrate sample data into Line number Data preprocess.Then, in S140, the sample concentrated using the history semiconductor chip sample data after data prediction The one or more gone out selected by notebook data are most suitable for the parameter value of Prediction Parameters to train the ratio of defects prediction model.
Here, data prediction can include carrying out data to the sample data that history semiconductor chip sample data is concentrated Cleaning, to remove noisy sample data.How to remove noise data to be well known in the art, no longer describe herein.This Outside, data prediction can also include carrying out at over-sampling the bad sample data that history semiconductor chip sample data is concentrated Reason, is expanded with the bad sample data concentrated to history semiconductor chip sample data.
Fig. 6 is shown to be used to carry out the sample data that history semiconductor chip sample data is concentrated according to the application The flow chart of the method for sampling processing.As shown in fig. 6, in S111, the parameter value of the parameters of sample data is returned One change is handled.For example, place is normalized using formula (number of individuals strong point-cell mean)/(group maximum-group minimum value) Reason.Then, in S115, using SMOTE, (Synthetic Minority Oversampling Technique synthesize minority class Oversampling technique) algorithm come to sample data concentrate bad sample data carry out over-sampling, with to the history semiconductor chip The bad sample data that sample data is concentrated is expanded.It preferably, can be using SMOTE algorithms come by the number of bad sample data It extends to equal with the number of good sample data.For instance, it is preferred that in one example, it can be by K in SMOTE algorithms Closest samples selection is 5 closest samples, and the sample instance created is adjacent positioned at selected example The new samples example of the midpoint of sample instance, i.e. step-length is arranged to 0.5.SMOTE algorithms are well known in the present art, It no longer describes herein.
Fig. 7 shows to train the defects of the first semiconductor chip process units in semiconductor chip production process rate The block diagram of the device 700 (hereinafter referred to as training device 700) of prediction model.As shown in figure 8, training device 700 wraps Include Prediction Parameters selecting unit 720 and training unit 740.
Prediction Parameters selecting unit 720 is used for using Logic Regression Models come going through from the first semiconductor chip process units One or more most suitable Prediction Parameters are selected in the parameter set for the sample data that history semiconductor chip sample data is concentrated.It is excellent Selection of land, in one example, Prediction Parameters selecting unit 720 are configured as:Using L1 regularizations Logic Regression Models and L2 just Then change the combination of Logic Regression Models to select one or more most suitable Prediction Parameters from the parameter set of sample data.Instruction The one or more gone out selected by the sample data that white silk unit 740 is concentrated for usage history semiconductor chip sample data are most The parameter value of Prediction Parameters is suitble to train ratio of defects prediction model, the ratio of defects prediction model is located at described for predicting The semiconductor core that one or more the second semiconductor chip process units in semiconductor chip production device downstream is produced The defects of piece rate.
Moreover it is preferred that in one example, training device 700 can also include randomization unit 730, be used for It is most suitable in the one or more gone out selected by the sample data that the history semiconductor chip sample data is used to concentrate pre- The sample for surveying the parameter value of parameter before training the ratio of defects prediction model, to concentrate history semiconductor chip sample data Data carry out randomization.Then, training unit 740 uses the history semiconductor chip sample number after randomization The parameter value of Prediction Parameters is most suitable for according to the one or more gone out selected by collection to train the ratio of defects prediction model.
Fig. 8 shows an exemplary block diagram of the randomization unit 730 according to the application.As shown in figure 8, with Machine processing unit 730 can include reshuffling board module 731, separation module 733 and selecting module 735.Board module 731 is reshuffled to use It carries out reshuffling board in the sample data for concentrating history semiconductor chip sample data.Separation module 733 is used to that bridge queen will to be reshuffled Sample data be separated into multiple subclass.Selecting module 735 is used to select the sample of predetermined ratio from each subclass Data form test sample collection, and remaining sample data is formed training sample set.
Moreover it is preferred that training device 700 can also include data pre-processing unit 710, for partly being led in usage history The one or more gone out selected by the sample data that body chip sample data is concentrated are most suitable for the parameter value of Prediction Parameters to instruct Before practicing ratio of defects prediction model, data prediction is carried out to the sample data that history semiconductor chip sample data is concentrated.So Afterwards, training unit 740 uses the one kind gone out selected by the history semiconductor chip sample data set after data prediction Or the parameter values of a variety of most suitable Prediction Parameters trains ratio of defects prediction model.
In one example, the sample that data pre-processing unit 710 can concentrate history semiconductor chip sample data Data carry out data cleansing, to remove noisy sample data.In addition, in another example, data pre-processing unit 710 is also Over-sampling processing can be carried out to the bad sample data that history semiconductor chip sample data is concentrated, with to history semiconductor chip The bad sample data that sample data is concentrated is expanded.
It is to be understood that data pre-processing unit 710, Prediction Parameters selecting unit 720, randomization unit 730, Training unit 740, reshuffle board module 731, separation module 733 and selecting module 735 can be configured to carry out it is above-mentioned with reference to Fig. 1 Operation or function to 6 descriptions.
It is to be understood that be illustrative for rather than referring to figs. 1 to the module and corresponding function of 8 descriptions for limiting, Concrete function can be realized in different modules or in individual module.
Fig. 9 shows the flow chart of the method for rate the defects of being used to improve semiconductor chip according to the application.Such as Fig. 9 institutes Show, in S910, the one or more positioned at the first semiconductor chip process units downstream is predicted using ratio of defects prediction model The defects of semiconductor chip that second semiconductor chip process units is produced rate whether be more than predetermined threshold, wherein, it is described Ratio of defects prediction model is method training as described above.For example, can using ratio of defects prediction model come predict this second Whether there is in the semiconductor core tile handled in semiconductor chip process units is more than that predetermined threshold (for example, 10) has The semiconductor chip of defect.If it is present think that ratio of defects is more than predetermined threshold.Otherwise, it is not considered as to be more than predetermined threshold.This In, the predetermined threshold is drawn based on the sample data of the first semiconductor chip process units.Then, in S920, When the defects of predicting produced semiconductor chip rate is more than the predetermined threshold, to the first semiconductor chip process units Carry out defect maintenance processing.For example, the first semiconductor chip process units is started the cleaning processing.
Using the method shown in Fig. 9, the production can be located at by being predicted in the first semiconductor chip process units The defects of semiconductor chip that one or more the second semiconductor chip process units in device downstream is produced rate whether be more than Predetermined threshold, and when rate is more than predetermined threshold predicted the defects of, the first semiconductor chip process units is carried out in time Defect maintenance is handled, so that defect will not occur again in the semiconductor chip that first process units then produces, so as to carry High semiconductor chip yields.
Preferably, the method shown in Fig. 9 can also include to positioned at the one of the first semiconductor chip process units downstream A or multiple second semiconductor chip process units notify semiconductor chip existing defects, it is possible thereby to so that the one or more Second semiconductor chip process units abandons the semiconductor chip.
Figure 10 shows the block diagram of the system 1000 of rate the defects of improving semiconductor chip according to the application.Such as Figure 10 Shown, system 1000 includes prediction meanss 1010 and defect processing device 1020.Prediction meanss 1010 are used for pre- using ratio of defects Model is surveyed to predict one or more the second semiconductor chip process units positioned at the first semiconductor chip process units downstream The defects of semiconductor chip produced rate whether be more than predetermined threshold, wherein, the ratio of defects prediction model is by as above What the training device 700 was trained.Defect processing device 1020 is used to predict lacking for produced semiconductor chip When the rate of falling into is more than the predetermined threshold, defect maintenance processing is carried out to the first semiconductor chip process units.Preferably, at one In example, system 1000 can also include training device 700 as described above.
Above with reference to Fig. 1 to Fig. 8, to training the first half in semiconductor chip production process to lead according to the application The defects of body chip production device, the embodiment of method and device of rate prediction model was described.Training cartridge recited above It puts and hardware realization may be employed, can also be realized using the combination of software or hardware and software.
In this application, training device 700 can utilize computing device to realize.Figure 11 shows the implementation according to the application The block diagram of the computing device 1100 for being used to implement training device 700 of example.According to one embodiment, computing device 1100 can be with Including one or more processors 1102, processor 1102 is performed in computer readable storage medium (that is, memory 1104) Storage or one or more computer-readable instructions (that is, the above-mentioned element realized in a software form) of coding.
In one embodiment, computer executable instructions are stored in memory 1104, cause one when implemented Or multiple processors 1102:Using Logic Regression Models come from the history semiconductor core of the first semiconductor chip process units One or more most suitable Prediction Parameters are selected in the parameter set for the sample data that piece sample data is concentrated;And described in use The one or more gone out selected by the sample data that history semiconductor chip sample data is concentrated are most suitable for the ginseng of Prediction Parameters Numerical value trains the ratio of defects prediction model, and the ratio of defects prediction model is located at first semiconductor chip for predicting The defects of semiconductor chip that one or more the second semiconductor chip process units in process units downstream is produced rate.
It should be understood that the computer executable instructions stored in memory 1104 cause one or more places when implemented It manages in each embodiment of the progress the application of device 1102 above in association with Fig. 1-8 various operations described and function.
According to one embodiment, a kind of program product of such as non-transitory machine readable media is provided.It is described non-temporary When property machine readable media can have instruction (that is, the above-mentioned element realized in a software form), which, which works as, is executable by a machine When so that machine is performed in each embodiment of the application above in association with Fig. 1-8 various operations described and function.
The specific embodiment illustrated above in conjunction with attached drawing describes exemplary embodiment, it is not intended that can realize Or fall into all embodiments of the protection domain of claims." exemplary " meaning of term used in entire this specification Taste " being used as example, example or illustration ", is not meant to than other embodiments " preferably " or " having advantage ".For offer pair The purpose of the understanding of described technology, specific embodiment include detail.However, it is possible in these no details In the case of implement these technologies.In some instances, it is public in order to avoid the concept to described embodiment causes indigestion The construction and device known is shown in block diagram form.
Foregoing description in the present disclosure is provided so that any those of ordinary skill in this field can realize or make Use present disclosure.To those skilled in the art, the various modifications carried out to present disclosure are apparent , also, can also be in the case where not departing from protection domain in the present disclosure, it should by generic principles defined herein For other modifications.Therefore, present disclosure is not limited to examples described herein and design, but disclosed herein with meeting Principle and novel features widest scope it is consistent.

Claims (19)

1. a kind of the defects of being used to train the first semiconductor chip process units in semiconductor chip production process rate prediction mould The method of type, including:
Using Logic Regression Models come from the history semiconductor chip sample data set of the first semiconductor chip process units In sample data parameter set in select one or more most suitable Prediction Parameters;And
The one or more gone out selected by the sample data concentrated using the history semiconductor chip sample data are most suitable for The parameter value of Prediction Parameters trains the ratio of defects prediction model, and the ratio of defects prediction model is located at described for predicting The semiconductor core that one or more the second semiconductor chip process units in semiconductor chip production device downstream is produced The defects of piece rate.
2. the method for claim 1, wherein the first semiconductor chip process units is surface mounting of semiconductor chips dress It puts, one or more of second semiconductor chip process units are lacking for curable epoxide device and the semiconductor chip Sunken rate is protrusion of surface ratio of defects.
3. method as claimed in claim 1 or 2, wherein, in the sample that the history semiconductor chip sample data is used to concentrate Notebook data it is selected go out one or more be most suitable for the parameter value of Prediction Parameters train the ratio of defects prediction model it Before, the history semiconductor chip sample data set based on the first semiconductor chip process units trains the ratio of defects prediction Model further includes:
Data prediction is carried out to the sample data that the history semiconductor chip sample data is concentrated;And
The one or more gone out selected by the sample data concentrated using the history semiconductor chip sample data are most suitable for The parameter value of Prediction Parameters trains the ratio of defects prediction model to include:
One gone out selected by the sample data concentrated using the history semiconductor chip sample data after data prediction Kind or the parameter values of a variety of most suitable Prediction Parameters train the ratio of defects prediction model.
4. it is the method for claim 1, wherein selected using Logic Regression Models from the parameter set of sample data The most suitable Prediction Parameters of one or more include:
Using the combination of L1 regularizations Logic Regression Models and L2 regularization Logic Regression Models come from the parameter set of sample data In select one or more most suitable Prediction Parameters.
5. the method for claim 1, wherein in the sample number that the history semiconductor chip sample data is used to concentrate The one or more gone out selected by are most suitable for the parameter value of Prediction Parameters come before training the ratio of defects prediction model, base The ratio of defects prediction model is trained in the history semiconductor chip sample data set of the first semiconductor chip process units It further includes:
To the history semiconductor chip sample data concentrate sample data carry out randomization and
The one or more gone out selected by the sample data concentrated using the history semiconductor chip sample data are most suitable for The parameter value of Prediction Parameters trains the ratio of defects prediction model to include:
One gone out selected by the sample data concentrated using the history semiconductor chip sample data after randomization Kind or the parameter values of a variety of most suitable Prediction Parameters train the ratio of defects prediction model.
6. method as claimed in claim 3, wherein, to the sample data that the history semiconductor chip sample data is concentrated into Line number Data preprocess includes:
Over-sampling processing is carried out to the bad sample data that the history semiconductor chip sample data is concentrated, with to the history half Bad sample data in conductor chip data set is expanded.
7. method as claimed in claim 5, wherein, to the sample data that the history semiconductor chip sample data is concentrated into Row randomization includes:
The sample data concentrated to the history semiconductor chip sample data carries out reshuffling board;
The sample data for reshuffling bridge queen is separated into multiple subclass;And
The sample data composition test sample collection of predetermined ratio is selected from each subclass, and by remaining sample data Form training sample set.
8. a kind of method for the defects of improving semiconductor chip rate, including:
One or more the second half positioned at the first semiconductor chip process units downstream are predicted using ratio of defects prediction model The defects of semiconductor chip that conductor chip process units is produced rate whether be more than predetermined threshold, wherein, the ratio of defects Prediction model is the method as described in any in claim 1 to 7 is trained;And
When rate is more than the predetermined threshold predict produced semiconductor chip the defects of, to first semiconductor core Piece process units carries out defect maintenance processing.
9. a kind of the defects of being used to train the first semiconductor chip process units in semiconductor chip production process rate prediction mould The device of type, including:
Prediction Parameters selecting unit, for using Logic Regression Models come from the history of the first semiconductor chip process units One or more most suitable Prediction Parameters are selected in the parameter set for the sample data that semiconductor chip sample data is concentrated;And
Training unit, for the one kind gone out selected by the sample data concentrated using the history semiconductor chip sample data Or the parameter value of a variety of most suitable Prediction Parameters trains the ratio of defects prediction model, the ratio of defects prediction model is for pre- One or more second semiconductor chip process units of the location in the first semiconductor chip process units downstream is produced The defects of semiconductor chip gone out rate.
10. device as claimed in claim 9, wherein, the first semiconductor chip process units is surface mounting of semiconductor chips Device, one or more of second semiconductor chip process units are curable epoxide device and the semiconductor chip Ratio of defects is protrusion of surface ratio of defects.
11. the device as described in claim 9 or 10, further includes:
Data pre-processing unit, for selected by the sample data that the history semiconductor chip sample data is used to concentrate The one or more gone out are most suitable for the parameter value of Prediction Parameters come before training the ratio of defects prediction model, to the history half The sample data that conductor chip sample data is concentrated carries out data prediction;And
The training unit is configured as:Using selected by the history semiconductor chip sample data set after data prediction The parameter value that the one or more selected are most suitable for Prediction Parameters trains the ratio of defects prediction model.
12. device as claimed in claim 9, wherein, the Prediction Parameters selecting unit is configured as:
Using the combination of L1 regularizations Logic Regression Models and L2 regularization Logic Regression Models come from the parameter set of sample data In select one or more most suitable Prediction Parameters.
13. device as claimed in claim 9, further includes:
Randomization unit, for selected by the sample data that the history semiconductor chip sample data is used to concentrate The one or more gone out are most suitable for the parameter value of Prediction Parameters come before training the ratio of defects prediction model, to the history half Conductor chip sample data concentrate sample data carry out randomization and
The training unit is configured as:Using selected by the history semiconductor chip sample data set after randomization The parameter value that the one or more selected are most suitable for Prediction Parameters trains the ratio of defects prediction model.
14. device as claimed in claim 11, wherein, the data pre-processing unit is configured as:
Over-sampling processing is carried out to the bad sample data that the history semiconductor chip sample data is concentrated, with to the history half Bad sample data in conductor chip data set is expanded.
15. device as claimed in claim 13, wherein, the randomization unit includes:
Board module is reshuffled, the sample data for being concentrated to the history semiconductor chip sample data carries out reshuffling board;
Separation module, for the sample data for reshuffling bridge queen to be separated into multiple subclass;And
Selecting module, for selecting the sample data of predetermined ratio composition test sample collection from each subclass, and will Remaining sample data forms training sample set.
16. a kind of system for the defects of improving semiconductor chip rate, including:
Prediction meanss, for predicting one positioned at the first semiconductor chip process units downstream using ratio of defects prediction model Or multiple second semiconductor chip process units produced semiconductor chip the defects of rate whether be more than predetermined threshold, In, the ratio of defects prediction model is the method as described in any in claim 1 to 7 is trained;And
Defect processing device, for when rate is more than the predetermined threshold predict produced semiconductor chip the defects of, Defect maintenance processing is carried out to the first semiconductor chip process units.
17. system as claimed in claim 16, further includes:
Device as described in any in claim 9 to 15.
18. a kind of computing device, including:
One or more processors,
Memory, the memory store instruction, when described instruction is performed by one or more of processors so that described One or more processors perform the method as described in any in claim 1 to 7.
19. a kind of non-transitory machinable medium, is stored with executable instruction, described instruction causes upon being performed The machine performs the method as described in any in claim 1 to 7.
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