CN108107074A - Characterize the dipulse flash of light Raman method and system of the hot physical property of two-dimension nano materials - Google Patents

Characterize the dipulse flash of light Raman method and system of the hot physical property of two-dimension nano materials Download PDF

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CN108107074A
CN108107074A CN201711384573.9A CN201711384573A CN108107074A CN 108107074 A CN108107074 A CN 108107074A CN 201711384573 A CN201711384573 A CN 201711384573A CN 108107074 A CN108107074 A CN 108107074A
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mrow
msub
sample
mfrac
theta
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CN108107074B (en
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张兴
樊傲然
胡玉东
马维刚
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Tsinghua University
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Tsinghua University
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Priority to PCT/CN2018/113421 priority patent/WO2019119988A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
    • G01K11/125—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance using changes in reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/18—Investigating or analyzing materials by the use of thermal means by investigating thermal conductivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G01N2021/1725—Modulation of properties by light, e.g. photoreflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G01N2021/1731—Temperature modulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/067—Electro-optic, magneto-optic, acousto-optic elements

Abstract

The present invention proposes a kind of dipulse flash of light Raman method and system for characterizing the hot physical property of two-dimension nano materials.The dipulse flash of light Raman method of the hot physical property of characterization two-dimension nano materials includes：(1) by wavelength is different, the pulse period is identical heating pulse laser and direct impulse laser, the temperature for obtaining sample rises data；(2) data are risen based on temperature, determines the thermal physical property parameter of sample.Method proposed by the invention, heating pulse laser heating sample, direct impulse laser acquisition sample is respectively adopted in different periods, so, this method avoids measurement error without focusing, heating pulse laser and direct impulse laser, which is respectively adopted, can avoid influence of the heating power to measurement accuracy, so that the accuracy of the sample thermo-physical property parameter of this method characterization is more preferable, sensitivity higher.

Description

Characterize the dipulse flash of light Raman method and system of the hot physical property of two-dimension nano materials
Technical field
The present invention relates to the hot physical property measurement field of micro-nano-scale, specifically, the present invention relates to a kind of characterization two-dimensional nanos The dipulse flash of light Raman method and system of the hot physical property of material.More specifically, the present invention relates to the characterization hot objects of two-dimension nano materials Property dipulse flash of light Raman method, for characterizing the dipulse of the hot physical property of two-dimension nano materials flash of light Raman system.
Background technology
Nano film material has important application prospect in fields such as photoelectric cell, mechanical organ and storage mediums, And the Accurate Determining of the property to nano film material, then it is the prerequisite that it is applied.
Contact method as traditional thermal conduction characteristic measuring method, is widely used in the survey of two-dimension nano materials Amount.2013, Xie. et al. (Xie H, et al., Applied Physics Letters, 2013,102 (11):111911.) The thermal conductivity of suspension graphene nano band is measured by energization self-heating method.The same year, Jang. et al. (Jang W, et al.,Applied Physics Letters,2013,103(13):133102.) suspension Multi-layer graphite is measured by T-shaped method The thermal conductivity of alkene.In addition, suspension micro element method is also widely used for the measurement of two-dimension nano materials.However, contact method The thermal contact resistance that can not be eliminated and contact resistance are often introduced, unnecessary error is brought to measurement；It needs to prepare microelectrode, Sample preparation is difficult, increases measurement difficulty；Due to there are effect of leakage, being generally unsuitable for the sample of substrate.Due to boundary The influence of face effect, the nano thin-film property for having substrate and suspension have differences, and therefore, also need to measure using non-contact method There is the two-dimension nano materials thermal conduction characteristic of substrate.
Raman spectroscopy can be used for the heat transfer that measurement has substrate two-dimension nano materials as a kind of non-contact method Characteristic：There is the two-dimensional material sample of substrate by continuous laser heating, then by measuring two-dimensional material raman characteristic peak peak position Offset determines two-dimensional material Wen Sheng, you can determines its thermal conduction characteristic.However, it needs to assume two-dimensional material in such measurement Laser absorption rate and substrate Wen Sheng, introduce unnecessary error.2016, Li. et al. (Li Q Y, et al., International Journal of Heat and Mass Transfer,2016,95:956-963.) develop change hot spot Raman flicker method has substrate two-dimension nano materials, by changing spot size using pulse laser and continuous laser heating respectively The thermal conductivity of substrate and the when two-dimensional material of two-dimensional material laser absorption rate is obtained, by comparing pulse laser and continuous laser The temperature of heating rises the influence for eliminating two-dimension nano materials laser absorption rate, and then obtains two by changing pulse pulse Laser Time Tie up the thermal diffusivity of material.However, this method needs to change spot size by adjusting distance of the focal plane away from sample, surveying Certain error can be introduced in amount；The ratio between laser absorption rate and the discrimination of two-dimensional material thermal conductivity are relatively low, also result in certain Measurement error；Heating laser is simultaneously as detection light, and heating power crosses conference and laser heat is caused to float, the too small meeting of heating power Sample temperature is caused to rise too small, can influence measurement accuracy.
In conclusion existing experimental study still cannot accurately measure the thermal conduction characteristic for having substrate two-dimension nano materials, Urgently developing easier, higher precision has substrate two-dimension nano materials thermal conduction characteristic to determine method.
The content of the invention
In order to accurately measure the thermal physical property parameter of two-dimension nano materials, the present invention provides one kind for characterizing two wieners The dipulse flash of light Raman method of the rice hot physical property of material.Wherein, for the two-dimension nano materials sample for having substrate, can be used it is a branch of compared with Strong heating pulse laser heats sample and substrate；In the interval time t of heating pulse lasercIt is interior, use another Shu Butong The direct impulse laser of wavelength carries out Raman signal detection, and using the offset of Raman spectrum peak position and the linear relationship of Wen Sheng, it can To determine direct impulse Laser Time tpThe Wen Sheng of interior sample and substrate surface.Moreover, it can also be occurred by double-channel signal Device, to regulate and control the time deviation t of direct impulse laser and heating pulse laserd, can simultaneously determination sample and substrate surface Temperature rises versus time curve, thus can obtain the thermal diffusivity α, thermal conductivity λ and two wieners of two-dimension nano materials sample The thermal physical property parameters such as the thermal contact resistance g between rice material and substrate.In addition, the above method can equally measure suspension two-dimensional nano material Material temperature liter changes with time, so as to obtain the thermal diffusivity α of suspension two-dimension nano materials.
In view of this, contactless, measurement essence is realized by double laser beam an object of the present invention is to provide one kind Degree higher, sensitivity higher are suitable for the side for having the two-dimension nano materials thermal physical property parameter of substrate and suspension setting simultaneously Method.
In the first aspect of the present invention, the present invention proposes a kind of dipulse flash of light for characterizing the hot physical property of two-dimension nano materials Raman method.
According to an embodiment of the invention, the described method includes：(1) by wavelength is different, the pulse period is identical heating arteries and veins Impulse light and direct impulse laser, the temperature for obtaining sample rise data；(2) data are risen based on the temperature, determines the sample Thermal physical property parameter.
Inventor it was unexpectedly observed that using the embodiment of the present invention method, for two-dimension nano materials sample, can be used one Beam stronger heating pulse laser heats sample, then within the interval time of heating pulse laser, uses another Shu Butong The direct impulse laser of wavelength is detected, and the temperature that can determine sample in temperature descending section rises data, and is determined according to the data In this way, this method avoids measurement error without focusing, heating pulse laser and spy is respectively adopted in the thermal physical property parameter of sample Influence of the heating power to measurement accuracy can be avoided by surveying pulse laser, and measurement temperature descending section temperature, which rises data, can eliminate laser absorption rate Influence to measurement, so that the precision higher of the two-dimension nano materials sample thermo-physical property parameter of this method measurement, accuracy are more Good and sensitivity higher.
In addition, method according to the above embodiment of the present invention, can also have following additional technical characteristic：
According to an embodiment of the invention, step (1) further comprises：(1-1) by heating pulse laser, in the first pulse Time thInside make the temperature of the sample from environment temperature T1Rise to stable state T2；(1-2) described sample is in the first interval time tc It is interior, from the stable state T2It is cooled to environment temperature T1, and from the first interval time tcInterior time deviation tdStart, pass through Direct impulse laser is in the second burst length tpIt is interior that Raman signal detection is carried out to the sample, to obtain the drawing of the sample Graceful spectrum；(1-3) is based on the characteristic peak deviant of two-dimension nano materials described in the Raman spectrum that step (1-2) obtains, Determine the sample in the second burst length tpInterior temperature rises T3。
According to an embodiment of the invention, the lower surface of the sample is equipped with substrate；Moreover, step (1-2) further comprises： By the direct impulse laser in the second burst length tpIt is interior that Raman signal detection is carried out to the sample, to obtain The Raman spectrum of the sample and the substrate；And step (1-3) further comprises：Based on two described in the Raman spectrum Dimension nano material and the respective characteristic peak deviant of the substrate, determine the second burst length tpThe temperature of the interior sample rises T3 T is risen with the temperature of the substrate4。
According to an embodiment of the invention, the two-dimension nano materials are nonmetallic two-dimensional nano-film material, are preferably stone Black alkene, silene or phosphorus alkene, the material of the substrate for silica or other have the nonmetallic materials of raman characteristic peak.
According to an embodiment of the invention, the heating pulse laser and direct impulse laser are all that continuous laser passes through electric light The modulation of modulator and signal generator and formed.
According to an embodiment of the invention, the wavelength of the direct impulse laser is more than the wavelength of the heating pulse laser.
According to an embodiment of the invention, the intensity for the upper surface that the direct impulse laser is radiated at the sample is less than 3mW。
According to an embodiment of the invention, step (1) carries out under vacuum conditions, and the vacuum degree of the vacuum environment is small In 10-3Pa。
According to an embodiment of the invention, the thermal physical property parameter includes thermal conductivity, thermal diffusivity and contact conductane at least One of；Also, step (2) further comprises：(2-1) establishes the nonstationary thermal conduction equation group of temperature-fall period；(2-2) is to described non- Steady heat conduction equation group carries out nondimensionalization processing；(2-3) is based on the temperature and rises data, to the non-steady of nondimensionalization processing State heat conduction equation group carries out multi-parameter fitting processing, to obtain the thermal physical property parameter of the sample.
According to an embodiment of the invention, in step (2-1), for being equipped with the sample of substrate, it is coupled with the base The sample at bottom is as follows in the nonstationary thermal conduction equation group of temperature-fall period：
Wherein, the Gauss average temperature rising of the sample is
The surface Gauss average temperature rising of the substrate is
The stable state temperature of the sample is upgraded to
The stable state temperature of the substrate is upgraded to
The Gauss average constant of the exploring laser light isαs、αbRespectively described sample and the substrate Thermal diffusivity, contact conductanes of the g between the sample and the substrate.
According to an embodiment of the invention, in step (2-1), for the sample that suspension is set, the sample is dropping The nonstationary thermal conduction equation group of thermophase is as follows：
Wherein, the Gauss average temperature rising of the sample is
The stable state temperature of the sample is upgraded to
The Gauss average constant of the exploring laser light isαsFor the thermal diffusivity of the sample.
In the second aspect of the present invention, the present invention proposes a kind of dipulse for being used to characterize the hot physical property of two-dimension nano materials Flash of light Raman system.
According to an embodiment of the invention, the system comprises：Sample room, the sample room are used to place sample；Heating dress It puts, the first light extraction light path of the heating unit connects the sample room, and the heating pulse laser that the heating unit is formed For heating the sample；Detection device, the second light extraction light path of the detection device connect the sample room, and the detection The temperature that the direct impulse laser that device is formed is used to detect the sample rises data；Thermal physical property parameter determining device, the hot object Property parameter determining device be based on temperature liter data, determine the thermal physical property parameter of the sample；Wherein, the first light extraction light path It is overlapped with the second light extraction light path part, and the heating pulse laser of heating unit formation and the detection device are formed Direct impulse laser wavelength is different, the pulse period is identical.
Inventor is it was unexpectedly observed that the system of the embodiment of the present invention, and including heating unit and detection device, which fills Heating pulse laser can be provided to sample room by putting, and detection device can provide direct impulse laser to sample room, in this way, heating dress Sample can be heated by putting the stronger heating pulse laser to be formed, then within the interval time of heating pulse laser, detection device The direct impulse laser for forming another beam different wave length detects sample, and thermal physical property parameter characterization apparatus can be according to detection The sample temperature of acquisition rises the thermal physical property parameter that data determine sample, also, accuracy higher, the measurement accuracy of the test system More preferable and sensitivity higher.
In addition, system according to the above embodiment of the present invention, can also have following additional technical characteristic：
According to an embodiment of the invention, the heating unit includes：First laser device, the first laser device are used to be formed Heating laser；And first electrooptic modulator, first electrooptic modulator are arranged in the light path of the heating laser, and use In the heating laser is converted to heating pulse laser；The detection device includes：Second laser, the second laser For forming exploring laser light；And second electrooptic modulator, second electrooptic modulator are arranged on the light of the exploring laser light On the road, and for the exploring laser light to be converted to direct impulse laser；The system further comprises：Double-channel signal occurs Device, the double-channel signal generator are electrically connected with first electrooptic modulator, second electrooptic modulator, are used for respectively Regulate and control the pulse period of heating pulse laser and direct impulse laser；Raman spectrometer, the Raman spectrometer are located at institute simultaneously It states in the first light extraction light path and the second light extraction light path, and is connected with the sample room, and gather the direct impulse laser Under the sample Raman signal；Temperature rises determination unit, and the temperature rises computing unit and is connected with the Raman spectrometer, and is based on The characteristic peak deviant of two-dimension nano materials described in the Raman signal determines that the temperature of the sample rises data.
According to an embodiment of the invention, the sample of substrate is equipped with for lower surface, the Raman spectrometer can gather The sample and the Raman signal of the substrate under the direct impulse laser, the temperature are risen computing unit and are believed based on the Raman Two-dimension nano materials described in number and the respective characteristic peak deviant of the substrate determine the first Wen Sheng of the sample respectively Second temperature of data and the substrate rises data.
According to an embodiment of the invention, the two-dimension nano materials are nonmetallic two-dimensional nano-film material, are preferably stone Black alkene, silene or phosphorus alkene, and the material of the substrate for silica or other have the nonmetallic materials of raman characteristic peak.
According to an embodiment of the invention, the wavelength of the direct impulse laser is more than the wavelength of the heating pulse laser.
According to an embodiment of the invention, the intensity for the upper surface that the direct impulse laser is radiated at the sample is less than 3mW。
According to an embodiment of the invention, the sample room is connected with vacuum pump, and the vacuum degree of the sample room is smaller than 10-3Pa。
According to an embodiment of the invention, the thermal physical property parameter determining device includes：Modeling unit, the modeling unit are used In establishing nonstationary thermal conduction equation group of the sample in temperature-fall period；Data processing unit, the data processing unit and institute Modeling unit is stated to be connected, and for carrying out nondimensionalization processing to the nonstationary thermal conduction equation group；Thermal physical property parameter determines list Member, the thermal physical property parameter determination unit are connected with the data processing unit, and for the non-of nondimensionalization processing Steady heat conduction equation group carries out multi-parameter fitting processing, and determines the thermal physical property parameter of the sample.
According to an embodiment of the invention, the thermal physical property parameter includes thermal conductivity, thermal diffusivity and contact conductane at least One of.
According to an embodiment of the invention, the modeling unit is configured as there is the sample of substrate, and coupling is The sample for stating substrate is as follows in the nonstationary thermal conduction equation group of temperature-fall period：
Wherein, the Gauss average temperature rising of the sample is
The surface Gauss average temperature rising of the substrate is
The stable state temperature of the sample is upgraded to
The stable state temperature of the substrate is upgraded to
The Gauss average constant of the exploring laser light isαs、αbRespectively described sample and the substrate Thermal diffusivity, contact conductanes of the g between the sample and the substrate.
According to an embodiment of the invention, the modeling unit is configured as the sample set for suspension, the sample Product are as follows in the nonstationary thermal conduction equation group of temperature-fall period：
Wherein, the Gauss average temperature rising of the sample is
The stable state temperature of the sample is upgraded to
The Gauss average constant of the exploring laser light isαsFor the thermal diffusivity of the sample.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description It obtains substantially or is recognized by the practice of the present invention.
Description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination accompanying drawings below to embodiment Substantially and it is readily appreciated that, wherein：
Fig. 1 is the dipulse flash of light Raman method flow of the characterization hot physical property of two-dimension nano materials of one embodiment of the invention Figure；
Fig. 2 is the flow diagram of the characterizing method step S100 of one embodiment of the invention；
Fig. 3 is the flow diagram of the characterizing method step S200 of one embodiment of the invention；
Fig. 4 is the dipulse flash of light Raman system for being used to characterize the hot physical property of two-dimension nano materials of one embodiment of the invention Structure diagram；
Fig. 5 is the dipulse flash of light Raman system for being used to characterize the hot physical property of two-dimension nano materials of another embodiment of the present invention System structure diagram；
Fig. 6 be one embodiment of the invention system in hot physical property determining device structure diagram；
Fig. 7 is the physical model schematic diagram of the two-dimension nano materials sample for having substrate of one embodiment of the invention；
Fig. 8 is the heating pulse of one embodiment of the invention and sequence, sample temperature and the base reservoir temperature of direct impulse Change schematic diagram；
Fig. 9 is the sample dimensionless that the thermal diffusivity sensitivity for having substrate sample of one embodiment of the invention is ± 20% Temperature rise curve；
Figure 10 is that the substrate that the thermal diffusivity sensitivity for having substrate sample of one embodiment of the invention is ± 20% is immeasurable Guiding principle temperature rise curve；
Figure 11 is the sample dimensionless that the thermal conductivity sensitivity for having substrate sample of one embodiment of the invention is ± 20% Temperature rise curve；
Figure 12 is the substrate dimensionless that the thermal conductivity sensitivity for having substrate sample of one embodiment of the invention is ± 20% Temperature rise curve；
Figure 13 is that the sample that the contact conductane sensitivity for having substrate sample of one embodiment of the invention is ± 20% is immeasurable Guiding principle temperature rise curve；
Figure 14 is that the substrate that the contact conductane sensitivity for having substrate sample of one embodiment of the invention is ± 20% is immeasurable Guiding principle temperature rise curve；
Figure 15 is that the sample that the thermal diffusivity sensitivity of the suspension sample of another embodiment of the present invention is ± 20% is immeasurable Guiding principle temperature rise curve.
Reference numeral
A samples
B substrates
100 sample rooms
110 vacuum pumps
120 temperature control consoles
200 heating units
A the first light extraction light paths
210 first laser devices
220 first electrooptic modulators
300 detection devices
B the second light extraction light paths
310 second lasers
320 second electrooptic modulators
400 thermal physical property parameter determining devices
410 modeling units
420 data processing units
430 thermal physical property parameter determination units
500 double-channel signal generators
600 Raman spectrometers
700 temperature rise determination unit
810 plane mirrors
820 semi-transparent semi-reflecting lens
Specific embodiment
The embodiment of the present invention is described below in detail, those skilled in the art is it will be appreciated that example below is intended for solving The present invention is released, and is not construed as limitation of the present invention.Unless stated otherwise, it is not expressly recited in embodiment below specific Technology or condition, those skilled in the art can be according to common technology in the art or condition or according to product description It carries out.
In one aspect of the invention, the present invention proposes a kind of dipulse flash of light for characterizing the hot physical property of two-dimension nano materials Raman method.With reference to Fig. 1~4,7~15, the method for the present invention is described in detail.According to an embodiment of the invention, join According to Fig. 1, the dipulse flash of light Raman method of the hot physical property of characterization two-dimension nano materials includes：
S100：By the heating pulse laser and direct impulse laser that wavelength is different, the pulse period is identical, sample is obtained Temperature rises data.
In this step, inventor uses two kinds of wavelength differences, pulse periods identical pulse laser, wherein, first use Heating pulse laser heats sample, reuses direct impulse laser and sample is detected, in this way, in different periods point Not Cai Yong heating pulse laser heating sample, direct impulse laser acquisition sample, shadow of the heating power to measurement accuracy can be avoided It rings, and measurement error is avoided without focusing, measurement cooling segment data eliminates the influence of laser absorption rate, so that should The accuracy for the sample thermo-physical property parameter that method determines is more preferable, sensitivity higher.
Present inventor passes through the study found that in existing thermal conduction characteristic measuring method, and contact method introduces Thermal contact resistance and contact resistance be can not eliminate and deviation can be brought to measurement, and microelectrode needed for it prepare it is difficult and Add the difficulty of test, and its existing effect of leakage and sample that it is made not to be suitable for having substrate；And become hot spot Raman Flicker method is as a kind of contactless measurement, since the adjustment of its spot size is to realize to be readily incorporated by zoom Measurement error, and the ratio between laser absorption rate and two-dimensional material thermal conductivity discrimination it is relatively low also result in certain measurement error, And heating laser can also influence the precision of measurement as detection light simultaneously.
So for two-dimension nano materials sample, present inventor is by long-term the study found that one can first be used Beam stronger heating pulse laser heats sample, then within the interval time of heating pulse laser, uses another Shu Butong The direct impulse laser of wavelength is detected, and the temperature that can determine sample rises data, and the heat of sample is determined according to the data Physical parameter in this way, this method avoids measurement error without focusing, is respectively adopted heating pulse laser and direct impulse swashs Light can avoid influence of the heating power to measurement accuracy, so that the two-dimension nano materials sample thermo-physical property ginseng that this method symbolizes Several precision higher, accuracy be more preferable and sensitivity higher.
According to an embodiment of the invention, step 100 can be carried out under vacuum environment, and the vacuum degree of vacuum environment is small In 10-3Pa, in this way, the vacuum system vacuumized using the two-stage of vacuum pump and molecular pump, can effectively eliminate sample room Influence of the interior free convection to measuring accuracy.
According to an embodiment of the invention, may particularly include with reference to Fig. 2, step S100：
S110：By heating pulse laser, the temperature of sample is made to rise to stable state from environment temperature within the first burst length.
In this step, with reference to Fig. 8, in the first burst length thInside make the temperature of sample from environment temperature T1Rise to stable state T2。
According to an embodiment of the invention, environment temperature T1Temperature-controlled precision for ± 0.1K, in this way, using above-mentioned high-precision Temperature control console, precision higher, the accuracy that can make the two-dimension nano materials sample thermo-physical property parameter of acquisition are more preferable.
According to an embodiment of the invention, heating pulse laser can be that continuous laser is occurred by electrooptic modulator and signal Device and formed, in this way, continuous laser is converted into pulse laser by electrooptic modulator, can obtain that wavelength is different, pulse week Phase identical heating pulse laser and direct impulse laser.
In some specific examples, the sample of substrate is equipped with for lower surface, with reference to Fig. 8, heating pulse laser can be simultaneously Sample and substrate are heated, so, substrate also can be in the first burst length thIt is interior from environment temperature T1Rise to stable state T2’.And another In a little embodiments, for the sample that suspension is set, heating pulse laser only heats sample, so, only sample is in the first pulse Time thInside make the temperature of sample from environment temperature T1Rise to stable state T2。
S120：Sample is cooled to environment temperature within the first interval time, from stable state, and out of first interval time when Between deviation start, by direct impulse laser within the second burst length to sample carry out Raman signal detection.
In this step, with reference to Fig. 8, sample is in the first interval time tcIt is interior, from stable state T2It is cooled to environment temperature T1, and From the first interval time tcInterior time deviation tdStart, by direct impulse laser in the second burst length tpIt is interior to sample into Row Raman signal detects, to obtain the Raman spectrum of the sample.
According to an embodiment of the invention, direct impulse laser can be that continuous laser is occurred by electrooptic modulator and signal The modulation of device and formed.Also, the wavelength of direct impulse laser is more than the wavelength of heating pulse laser, in this way, to detect arteries and veins Rushing the Raman spectrum measured on the basis of wavelength will not just be disturbed by heating pulse signal.Moreover, direct impulse laser is radiated at The intensity of the upper surface of sample is less than 3mW, in this way, will not just cause two wieners using the direct impulse laser of above-mentioned strength range The Wen Sheng of rice material sample.
According to an embodiment of the invention, two-dimension nano materials can be nonmetallic two-dimensional nano-film material, in this way, non-gold It is more preferable to belong to the intensity of the raman characteristic peak of the two-dimensional nano-film sample acquisition of material, so as to be conducive to more accurately extrapolate sample The temperature of product rises data.In some embodiments of the invention, two-dimension nano materials can be graphene, silene or phosphorus alkene, in this way, Using these above-mentioned two-dimensional nano-film materials with notable raman characteristic peak, can be used in this method, and this method is tested The accuracy higher of the thermal physical property parameter gone out.
According to an embodiment of the invention, the lower surface of sample can be equipped with substrate.According to an embodiment of the invention, substrate Material is silica, in this way, also having raman characteristic peak using the substrate of material under silica, so as to measure substrate Wen Sheng, and then can more accurately calculate the thermal physical property parameter of two-dimension nano materials.
In some specific examples of the present invention, the sample of substrate is equipped with for lower surface, step S120 can be wrapped further It includes：By direct impulse laser in the second burst length tpIt is interior that Raman signal detection is carried out to sample, to obtain sample simultaneously With the Raman spectrum of substrate.
In some embodiments of the invention, step S140 can be carried out in advance before step S100：It is continuous using detection The Raman spectrum of two-dimension nano materials sample at a temperature of a series of varying environments of laser scanning.And two wiener from Raman spectrum The characteristic peak of rice material can calibrate the peak position offset of raman characteristic peak of sample with Wen Sheng's with the deviant of environment temperature Relation curve, as a result, step S220 can go out the Wen Sheng of sample by corresponding characteristic peak deviant direct derivation in Raman spectrum, It is convenient and efficient.In some specific examples, the sample of substrate is equipped with for lower surface, can be surveyed at a temperature of a series of varying environments Sample and substrate Raman spectrum, and from Raman spectrum two-dimension nano materials and the respective characteristic peak of substrate with environment temperature Deviant, the peak position offset of the raman characteristic peak of sample and relation curve, the Raman of substrate of Wen Sheng can be calibrated respectively The peak position offset of characteristic peak and the relation curve of Wen Sheng.
According to an embodiment of the invention, the specific test parameter of Raman signal detection is not particularly limited, specifically for example The spot diameter r of direct impulse laserpIt can be carried out correspondingly according to sample and the specific material of substrate Deng, those skilled in the art Selection, details are not described herein.It should be noted that " spot radius " refer to that laser spot power density decays to laser center work( Radius at rate density 1/e, i.e. laser spot size.
S130：Based on the characteristic peak deviant of two-dimension nano materials in Raman spectrum, determine sample in the second burst length Interior Wen Sheng.
In this step, the characteristic peak deviant based on two-dimension nano materials in Raman spectrum, determines sample in the second arteries and veins Rush time tpInterior temperature rises T3.In some specific examples of the present invention, the sample of substrate, step S130 are equipped with for lower surface It can further comprise：Based on two-dimension nano materials in Raman spectrum and the respective characteristic peak deviant of substrate, the second arteries and veins is determined Rush time tpThe temperature of interior sample rises T3T is risen with the temperature of substrate4.It should be noted that, it can be approximate. due to burst length tp very in short-term It is considered as the temperature of t moment.
S200：Data are risen based on temperature, determine the thermal physical property parameter of sample.
In this step, the temperature based on the step S100 samples obtained rises data, it may be determined that goes out the thermal physical property parameter of sample. According to an embodiment of the invention, thermal physical property parameter may include at least one of thermal conductivity α, thermal diffusivity λ and contact conductane g. In some specific examples of the present invention, the sample of substrate is equipped with for lower surface, the thermal physical property parameter that step S200 is obtained includes The thermal conductivity α of samples, sample thermal diffusivity λsContact conductane g between sample and pedestal.In other tools of the present invention In body example, for the sample that suspension is set, the thermal physical property parameter that step S200 is obtained is the thermal conductivity α of samples。
According to an embodiment of the invention, may particularly include with reference to Fig. 3, step S200：
S210：Establish the nonstationary thermal conduction equation group of temperature-fall period.
In this step, the nonstationary thermal conduction equation group of temperature-fall period is established according to the concrete type of sample.
In some specific examples, for being equipped with the sample of substrate, unstable state of the sample in temperature-fall period of substrate is coupled with Heat conduction equation group is as follows：
Wherein, the Gauss average temperature rising of sample is
The surface Gauss average temperature rising of substrate is
The stable state temperature of sample is upgraded to
The stable state temperature of substrate is upgraded to
The Gauss average constant of exploring laser light isαs、αbThe respectively thermal diffusivity of sample and substrate, g Contact conductane between sample and substrate.
In other specific examples, for the sample that suspension is set, sample is in the nonstationary thermal conduction equation of temperature-fall period Group is as follows：
Wherein, the Gauss average temperature rising of sample is
The stable state temperature of sample is upgraded to
The Gauss average constant of exploring laser light isαsFor the thermal diffusivity of sample.It should be noted that " suspension setting " specifically refers to direct impulse laser and impinges upon sample lower surface in region on sample not contact directly i.e. with substrate Can, it is specific for example, being equipped with hole among substrate.
S220：Nondimensionalization processing is carried out to nonstationary thermal conduction equation group.
In this step, nondimensionalization processing is carried out to the nonstationary thermal conduction equation group that step S210 is established.
It should be noted that nondimensionalization method, refers to sample temperature-fall period temperature rising versus time curve and sample Product stable state Wen ShengRatio is done, substrate temperature-fall period temperature is risen into versus time curve and substrate stable state Wen ShengDo ratio Thus value eliminates influence of the laser absorption rate of sample and substrate to measurement result.
In some specific examples of the present invention, for being equipped with the sample of substrate, nondimensionalization treated sample and base Bottom surface Gauss average temperature rising versus time curveWithOnly with dimensionless number Fos=αsth/ (λsδ/g)、Fob=αbth/(λsδ/g) andIt is related, wherein, λs、λbThe respectively thermal conductivity of sample and substrate Rate, δ are the thickness of sample.
In other specific examples of the present invention, for the sample that suspension is set, nondimensionalization treated sample is high This average temperature rising versus time curveOnly with sample thermal diffusivity αsIt is related.
S230：Data are risen based on temperature, multi-parameter fitting processing is carried out to the nonstationary thermal conduction equation group of nondimensionalization processing.
In this step, data are risen based on temperature, multi-parameter plan is carried out to the nonstationary thermal conduction equation group of nondimensionalization processing Conjunction is handled, to obtain the thermal physical property parameter of sample.
According to an embodiment of the invention, specific multi-parameter fitting processing procedure is not particularly limited, art technology The nonstationary thermal conduction equation group and temperature that personnel can be handled according to specific nondimensionalization rise data and are correspondingly selected, herein not It repeats again.
In some specific examples of the present invention, for being equipped with the sample of substrate, temperature, which rises data, includes sample stable state Wen ShengSubstrate stable state Wen ShengSample and substrate surface rise versus time curve in temperature-fall period temperatureWithIt wherein, can be by adjusting time deviation tdSample and substrate surface can be obtained to change with time in temperature-fall period Wen Sheng CurveWithAlso, the dimensionless temperature that sample and substrate can be obtained by multi-parameter fitting rises change curve, can With reference to figure 9~14, you can obtain the thermal diffusivity α of samples=αbFos/Fob, thermal conductivityAnd Thermal contact resistance between sample and substrate
In other specific examples of the present invention, for the sample that suspension is set, temperature, which rises data, includes sample stable state temperature It risesWith sample surfaces versus time curve is risen in temperature-fall period temperatureIt wherein, can be by adjusting time deviation td Sample can be obtained and rise versus time curve in temperature-fall period temperatureAlso, sample can be obtained by multi-parameter fitting Dimensionless temperature rise change curve, can refer to Figure 15, you can obtain the thermal diffusivity α of samples=αbFos/Fob。
In conclusion according to an embodiment of the invention, the present invention proposes a kind of hot physical property of definite two-dimension nano materials Heating pulse laser heating sample, direct impulse laser acquisition sample is respectively adopted in different periods in dipulse flash of light Raman method Product, in this way, this method avoids measurement error without focusing, heating pulse laser and direct impulse laser, which is respectively adopted, to be kept away Exempt from influence of the heating power to measurement accuracy, so that the accuracy for the sample thermo-physical property parameter that this method determines is more preferable, sensitive Spend higher.
Compared with prior art, the thermal diffusivity for the two-dimension nano materials that this method determines from two-dimension nano materials in itself The influence of laser absorption rate and substrate laser absorption rate；Traditional darkening spot method change object focal point is avoided to lead away from sample distance The non-confocal measurement of cause；Also, it by adjusting direct impulse and the time interval of heating pulse, can be obtained more compared to original method High time precision；Heating laser Bandwidth-Constrained is smaller, and higher energy warms sample can be used；And exploring laser light energy itself It is very low, it can be to avoid laser hot drift problem in itself, data precision higher；It is lossless in situ substrate two-dimension nano materials have been realized Non-contact measurement.Meanwhile the method can have the thermal diffusivity of substrate and suspension two-dimension nano materials with comparative determination, it can be with Influence of the research interfacial effect to two-dimension nano materials thermal conduction characteristic well.
In another aspect of the present invention, the present invention proposes a kind of double arteries and veins for being used to determine the hot physical property of two-dimension nano materials Punching flash of light Raman system.With reference to Fig. 4~15, the system of the present invention is described in detail.
According to an embodiment of the invention, with reference to Fig. 4, which includes：Sample room 100, heating unit 200, detection device 300 and thermal physical property parameter characterization apparatus 400；Wherein, sample room 100 is used to place sample A；First light extraction of heating unit 200 Light path a connections sample room 100, and the heating pulse laser that heating unit 200 is formed is used to heat sample A；Detection device 300 Second light extraction light path b connections sample room 100, and the direct impulse laser of the formation of detection device 300 is used to detect the Wen Sheng of sample A Data；And thermal physical property parameter determining device 400 is based on temperature and rises data, it may be determined that go out the thermal physical property parameter of sample A；Also, first Light extraction light path a partially overlaps with the second light extraction light path b, and the heating pulse laser and detection device 300 of the formation of heating unit 200 The wavelength of the direct impulse laser of formation is different, the pulse period is identical.
Two kinds of wavelength differences, pulse periods identical pulse laser is respectively adopted in present inventor, wherein, first use Heating pulse laser heats sample, reuses direct impulse laser and sample is detected, in this way, in different periods point Not Cai Yong heating pulse laser heating sample, direct impulse laser acquisition sample, shadow of the heating power to measurement accuracy can be avoided Ring, and measurement error avoided without focusing so that the accuracy for the sample thermo-physical property parameter that the system measures it is more preferable, Sensitivity higher.
According to an embodiment of the invention, heating pulse laser and direct impulse laser can be that continuous laser passes through electric light The modulation of modulator and signal generator and formed.Specifically, can refer to Fig. 5, heating unit 200 includes first laser device 210 and first electrooptic modulator 220, wherein, first laser device 210 is for forming heating laser, and the first electrooptic modulator 220 It is arranged in the light path of heating laser and for heating laser to be converted to heating pulse laser；Detection device 300 includes second 310 and second electrooptic modulator 320 of laser, wherein, second laser 310 is for forming exploring laser light, and the second electric light tune Device 320 processed is arranged in the light path of exploring laser light and for exploring laser light to be converted to direct impulse laser.In this way, pass through electric light Continuous laser is converted into pulse laser by modulator, can obtain wavelength is different, the pulse period is identical heating pulse laser and spy Survey pulse laser.
According to an embodiment of the invention, the concrete type of first laser device 210 is not particularly limited, as long as the type First laser device 210 is single transverse mode, the ion laser of single longitudinal mode or laser power are constant, complex Gaussian distribution solid swashs Light device, and light power, not less than 500mW, those skilled in the art can be according to the specific material for drawing sample to be tested and substrate Material is correspondingly selected, and details are not described herein.
According to an embodiment of the invention, the concrete type of second laser 310 is not also particularly limited, as long as the type Second laser 310 be single transverse mode, the ion laser of single longitudinal mode or laser power is constant, the solid of complex Gaussian distribution Laser, and line width, no more than 1nm, the specific requirement that those skilled in the art can test according to Raman spectrum carries out phase Ground selection is answered, details are not described herein.
According to an embodiment of the invention, with reference to Fig. 5, which can also further comprise double-channel signal generator 500, should Double-channel signal generator 500 is electrically connected respectively with the first electrooptic modulator 220, the second electrooptic modulator 230, for regulating and controlling to add The pulse period of thermal pulse laser and direct impulse laser.In this way, first can be adjusted simultaneously by double-channel signal generator 500 220 and second electrooptic modulator 230 of electrooptic modulator, so as to preferably adjust the first burst length t of heating pulse laserh With the first interval time tc, direct impulse laser the second burst length tpAnd heating pulse laser and direct impulse laser it Between time deviation td。
According to an embodiment of the invention, with reference to Fig. 5, the system can also further bag Raman spectrometer 600, the Raman spectrum Instrument 600 is located at simultaneously on the first light extraction light path a and the second light extraction light path b, and is connected with sample room 100, and gathers direct impulse The Raman signal of sample A under laser.In this way, sample A can be determined on the basis of direct impulse wavelength by Raman spectrometer 600 Raman spectrum.
According to an embodiment of the invention, with reference to Fig. 5, which also further can rise determination unit 700, the Wen Sheng by Bao Lawen Computing unit 700 respectively with Raman spectrometer 600, be connected, and based in Raman signal two-dimension nano materials characteristic peak offset Value determines that the temperature of sample rises data.In this way, at a temperature of a series of varying environments of detection continuous laser scanning can be used in advance The Raman spectrum of two-dimension nano materials sample, and from Raman spectrum two-dimension nano materials characteristic peak with environment temperature offset Value, can calibrate the cutting edge of a knife or a sword position offset of raman characteristic peak of sample and the relation curve of Wen Sheng, and temperature rises determination unit 700 as a result, It can be based on corresponding characteristic peak deviant direct derivation in Raman spectrum and go out sample in the second burst length tpInterior average temperature rising, It is convenient and efficient.Due to burst length tpVery in short-term, the temperature of t moment can approximate be considered as.
According to an embodiment of the invention, the sample A of substrate B is equipped with for lower surface, Raman spectrometer 600 can gather simultaneously Sample and the Raman signal of substrate under direct impulse laser, and temperature liter computing unit 700 can be based on two-dimensional nano in Raman signal Material and the respective characteristic peak deviant of substrate determine that the first temperature of sample rises the second temperature liter number of data and substrate respectively According to.In this way, the temperature that can once obtain sample A and substrate B simultaneously rises data, available for the heat for extrapolating two-dimension nano materials sample The thermal physical property parameters such as the thermal contact resistance g between diffusivity α, thermal conductivity λ and two-dimensional material and substrate.
According to an embodiment of the invention, for the specific material of sample A, two-dimension nano materials to be measured can be nonmetallic Two-dimensional nano-film material, in this way, the intensity for the raman characteristic peak that the two-dimensional nano-film sample of nonmetallic materials obtains is more preferable, So as to which the temperature for being conducive to more accurately extrapolate sample rises data.In some embodiments of the invention, two-dimensional nano to be measured Material can be graphene, silene or phosphorus alkene, in this way, using these above-mentioned two-dimensional nano-films with notable raman characteristic peak Material can be used in this method, and the accuracy higher of thermal physical property parameter that this method tests out.
According to an embodiment of the invention, the material of substrate B is silica, in this way, the base using material under silica Bottom also has raman characteristic peak, so as to measure the Wen Sheng of substrate, and then can more accurately calculate the heat of two-dimension nano materials Physical parameter.
According to an embodiment of the invention, the wavelength of direct impulse laser is more than the wavelength of heating pulse laser, in this way, to visit Surveying the Raman spectrum measured on the basis of impulse wave length will not just be disturbed by heating pulse signal.According to an embodiment of the invention, The intensity that direct impulse laser is radiated at the upper surface of sample is less than 3mW, in this way, the direct impulse using above-mentioned strength range swashs Light will not just cause the Wen Sheng of two-dimension nano materials sample.
According to an embodiment of the invention, with reference to Fig. 5, sample room 100 can be connected with vacuum pump 110, and sample room 100 is true Reciprocal of duty cycle is smaller than 10-3Pa in this way, using vacuum pump and the two-stage vacuum pumping pump of molecular pump, can effectively eliminate sample room Free convection in 100, so that the measuring accuracy higher of the system.According to an embodiment of the invention, with reference to Fig. 5, temperature control console 120 can be connected with the specimen holder of sample room 100, and temperature control console 120 can control the temperature accuracy of environment temperature in ± 0.1K, In this way, using above-mentioned high-precision temperature control console, the essence for the two-dimension nano materials sample thermo-physical property parameter that the system obtains can be made It is more preferable to spend higher, accuracy.
In some embodiments of the invention, with reference to Fig. 5, which can also further comprise plane mirror 810 and half Saturating semi-reflective mirror 820, wherein, plane mirror 810 can make the first light extraction light path a reflex to Raman spectrometer 600, and semi-transparent semi-reflecting Mirror 820 is arranged in the light path after the first light extraction light path a is reflected by plane mirror 810, and the second light extraction light path b can also reflected The first light extraction light path a is not influenced to Raman spectrometer 600 and, so, it can be achieved that the first light extraction light path a and the second light extraction light path b It is overlapped between semi-transparent semi-reflecting lens 820 and Raman spectrometer 600.
According to an embodiment of the invention, with reference to Fig. 6, thermal physical property parameter determining device may include modeling unit 410, and modeling is single Member 410 is used to establish nonstationary thermal conduction equation group of the sample in temperature-fall period.
In some specific examples of the present invention, modeling unit 210 can be configured as, for there is the sample of substrate, being coupled with Shown in the sample of substrate is specific as follows in the nonstationary thermal conduction equation group of temperature-fall period：
Wherein, the Gauss average temperature rising of sample is
The surface Gauss average temperature rising of substrate is
The stable state temperature of sample is upgraded to
The stable state temperature of substrate is upgraded to
The Gauss average constant of exploring laser light isαs、αbThe respectively thermal diffusivity of sample and substrate, g Contact conductane between sample and substrate.
In other embodiments of the present invention, modeling unit 410 is configured as the sample set for suspension, and sample exists The nonstationary thermal conduction equation group of temperature-fall period is specific as follows shown：
Wherein, the Gauss average temperature rising of sample is
The stable state temperature of sample is upgraded to
The Gauss average constant of exploring laser light isαsFor the thermal diffusivity of sample.
According to an embodiment of the invention, with reference to Fig. 6, thermal physical property parameter determining device may also include data processing unit 420, Data processing unit 420 is connected with modeling unit 410, and for carrying out nondimensionalization processing to nonstationary thermal conduction equation group.
According to an embodiment of the invention, with reference to Fig. 6, thermal physical property parameter determining device may also include thermal physical property parameter and determine list Member 430；And thermal physical property parameter determination unit 430 is connected with data processing unit 420, and for the non-steady of nondimensionalization processing State heat conduction equation group is carrying out multi-parameter fitting processing, and determines the thermal physical property parameter of sample.
According to an embodiment of the invention, thermal physical property parameter include thermal conductivity, thermal diffusivity and contact conductane at least it One..In some specific examples of the present invention, the sample of substrate, hot physical property ginseng obtained by the system are equipped with for lower surface Number includes the thermal conductivity α of samples, sample thermal diffusivity λsContact conductane g between sample and pedestal.In the another of the present invention In some specific examples, for the sample that suspension is set, thermal physical property parameter obtained by the system only has the thermal conductivity α of samples。
In conclusion according to an embodiment of the invention, the present invention proposes one kind for testing the hot object of two-dimension nano materials Property parameter system, including heating unit and detection device, which can provide heating pulse laser to sample room, and Detection device can provide direct impulse laser to sample room, in this way, the stronger heating pulse laser that heating unit is formed can add Hot sample, then within the interval time of heating pulse laser, the direct impulse that detection device forms another beam different wave length swashs Light detects sample, and the sample temperature that thermal physical property parameter characterization apparatus can be obtained according to detection rises data and determines sample Thermal physical property parameter, also, the accuracy higher of the test system, measurement accuracy be more preferable and sensitivity higher.
Below with reference to specific embodiment, present invention is described, it is necessary to which explanation, these embodiments are only descriptive , without limiting the invention in any way.
Embodiment 1
In this embodiment, two-dimension nano materials thermal physical property parameter is determined.
There is the substrate two-dimension nano materials physical model as shown in Figure 7.Under vacuum conditions, Gaussian Profile is met using a branch of , spot radius rhLaser heating laser heating two-dimension nano materials sample and substrate, since heating laser meets Gauss Distribution, central symmetry, therefore the one-dimensional cylindrical coordinates heat conduction equation of samples met, substrate meet two-dimentional cylindrical coordinates heat conduction equation.Reach steady During state, it is less than 3mW, spot radius r using powerpContinuous probe laser measurement sample and substrate Raman spectrum, pass through The offset of sample and substrate raman characteristic peak can distinguish the stable state Gauss average temperature rising of determination sample and substrate surfaceWithUnder vacuum conditions, heat transfer free convection can be neglected.
By laser heating Laser Modulation be heating pulse, by continuous probe Laser Modulation be direct impulse, pulse train As shown in Figure 8.By the time deviation t for changing direct impulse and heating pulsed, determination sample and substrate surface can exist simultaneously Temperature-fall period temperature rises versus time curveWithTwo temperature are risen into change curve and are based respectively on sample stable state Wen ShengSubstrate stable state Wen ShengDo nondimensionalization, you can eliminate the influence of laser absorption rate in measurement result.
According to there is substrate two-dimension nano materials physical model, sample and substrate are established in the Unsteady Heat Transfer side of temperature-fall period Journey group such as formula (1-6).
θs(∞, t)=θb(∞, z, t)=0 (4)
θb(r, ∞, t)=0 (5)
θs(r, 0)=θs0(r) (7)
θb(r, z, 0)=θb0(r,z) (8)
Wherein, αs、αbThe respectively thermal diffusivity of sample and substrate, λs、λbRespectively the thermal conductivity of sample and substrate, δ are Thickness of sample, contact conductanes of the g between sample and substrate.The sample Gauss average temperature rising then measured using Raman spectrum offset It is represented bySubstrate surface Gauss average temperature rising is represented byθs0(r) it is distributed for sample steady temperature,θ b0 (r, z) are distributed for substrate steady temperature,qpFor the Gauss average constant of the correspondence exploring laser light,
Nondimensionalization is carried out to equation, is understood through deriving, nondimensionalization sample and substrate surface Gauss average temperature rising are at any time Between change curveWithOnly with dimensionless number Fos=αsth/(λsδ/g)、Fob=αbth/(λsδ/ G) andIt is related.Change curve is risen by being fitted the sample measured and substrate dimensionless temperature, you can obtains two The thermal diffusivity α of dimension nano material samples=αbFos/Fob, thermal conductivityAnd two-dimensional nano material Thermal contact resistance between material and substrate
In this embodiment, if two-dimension nano materials are graphene, substrate is silica, chooses the simulation of its feature physical property Nondimensionalization sample and substrate surface Gauss average temperature rising versus time curveWithIt can obtain To two-dimension nano materials thermal diffusivity αs, thermal conductivity λsAnd the thermal contact resistance g between two-dimension nano materials and substrate is immeasurable to two The influence of guiding principle temperature curve is respectively as shown in Fig. 9~14.
Embodiment 2
In this embodiment, according to method and steps substantially the same manner as Example 1, the hot object of two-dimension nano materials is determined Property parameter.Difference lies in the two-dimension nano materials that suspension is set, sample is formula in the nonstationary thermal conduction equation group of temperature-fall period (9—12)：
θs(∞, t)=0 (11)
θs(r, 0)=θs0(r) (12)
In this embodiment, to equation carry out nondimensionalization, through derive understand, nondimensionalization sample Gauss average temperature rising with The change curve of timeOnly with sample thermal diffusivity αsIt is related, thermal diffusivity αsInfluence it is as shown in figure 15.
The present invention is not only limited to above-mentioned specific embodiment, the test of the double excitation light beam flicker method proposed in the present invention Principle can be widely applied to this field and associated other fields, and other a variety of specific embodiments may be employed and implement this Invention.For example, having separated the thought of heating laser and exploring laser light based on double excitation light beam Raman flicker method system, do not changing In the case of heating laser, change exploring laser light wavelength, and then change facula measurement scope, surveyed so as to fulfill confocal change hot spot Amount.Therefore, every design philosophy using the present invention does some simple designs changed or change, both falls within guarantor of the present invention The scope of shield.
In the description of the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", Terms such as " fixations " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integral；It can be with It is mechanical connection or electrical connection；It can be directly connected, can also be indirectly connected by intermediary, can be two The interaction relationship of connection or two elements inside a element.For the ordinary skill in the art, Ke Yigen Understand the concrete meaning of above-mentioned term in the present invention according to concrete condition.
In addition, term " first ", " second " are only used for description purpose, and it is not intended that instruction or hint relative importance Or the implicit quantity for indicating indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or Implicitly include at least one this feature.In the description of the present invention, " multiple " are meant that at least two, such as two, three It is a etc., unless otherwise specifically defined.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description Point is contained at least one embodiment of the present invention or example.In the present specification, schematic expression of the above terms is not It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office It is combined in an appropriate manner in one or more embodiments or example.In addition, without conflicting with each other, the skill of this field Art personnel can tie the different embodiments described in this specification or example and different embodiments or exemplary feature It closes and combines.
Although the embodiment of the present invention has been shown and described above, it is to be understood that above-described embodiment is example Property, it is impossible to limitation of the present invention is interpreted as, those of ordinary skill in the art within the scope of the invention can be to above-mentioned Embodiment is changed, changes, replacing and modification.

Claims (15)

  1. A kind of 1. dipulse flash of light Raman method for characterizing the hot physical property of two-dimension nano materials, which is characterized in that including：
    (1) by wavelength is different, the pulse period is identical heating pulse laser and direct impulse laser, the temperature for obtaining sample rises number According to；
    (2) data are risen based on the temperature, determines the thermal physical property parameter of the sample.
  2. 2. according to the method described in claim 1, it is characterized in that, step (1) further comprises：
    (1-1) by heating pulse laser, in the first burst length thInside make the temperature of the sample from environment temperature T1It rises to steady State T2；
    (1-2) described sample is in the first interval time tcIt is interior, from the stable state T2It is cooled to environment temperature T1, and from described first Interval time tcInterior time deviation tdStart, by direct impulse laser in the second burst length tpIt is interior that the sample is carried out Raman signal detects, to obtain the Raman spectrum of the sample；
    (1-3) is based on the characteristic peak deviant of two-dimension nano materials described in the Raman spectrum that step (1-2) obtains, and determines The sample is in the second burst length tpInterior temperature rises T3。
  3. 3. according to the method described in claim 2, it is characterized in that, the lower surface of the sample is equipped with substrate；
    Moreover, step (1-2) further comprises：
    By the direct impulse laser in the second burst length tpIt is interior that Raman signal detection is carried out to the sample, so as to Obtain the sample and the Raman spectrum of the substrate；
    Also, step (1-3) further comprises：
    Based on two-dimension nano materials described in the Raman spectrum and the respective characteristic peak deviant of the substrate, second is determined Burst length tpThe temperature of the interior sample rises T3T is risen with the temperature of the substrate4。
  4. 4. according to the method described in claim 3, it is characterized in that,
    The two-dimension nano materials are nonmetallic two-dimensional nano-film material, preferably graphene, silene or phosphorus alkene,
    The material of the substrate for silica or other have the nonmetallic materials of raman characteristic peak.
  5. 5. according to the method described in claim 1, it is characterized in that, the heating pulse laser and direct impulse laser are all to connect What continuous laser was formed by the modulation of electrooptic modulator and signal generator；
    Optionally, the wavelength of the direct impulse laser is more than the wavelength of the heating pulse laser；
    Optionally, the direct impulse laser is radiated at the intensity of the upper surface of the sample less than 3mW；
    Optionally, step (1) carries out under vacuum conditions, and the vacuum degree of the vacuum environment is less than 10-3Pa。
  6. 6. according to the method described in claim 1, it is characterized in that, the thermal physical property parameter include thermal conductivity, thermal diffusivity and At least one of contact conductane；Also, step (2) further comprises：
    (2-1) establishes the nonstationary thermal conduction equation group of temperature-fall period；
    (2-2) carries out nondimensionalization processing to the nonstationary thermal conduction equation group；
    (2-3) is based on the temperature and rises data, and multi-parameter fitting is carried out to the nonstationary thermal conduction equation group of nondimensionalization processing Processing, to obtain the thermal physical property parameter of the sample.
  7. 7. according to the method described in claim 6, it is characterized in that, in step (2-1), for being equipped with the sample of substrate Product, the sample for being coupled with the substrate are as follows in the nonstationary thermal conduction equation group of temperature-fall period：
    <mfenced open = "{" close = ""> <mtable> <mtr> <mtd> <mrow> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>r</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>+</mo> <mfrac> <mn>1</mn> <mi>r</mi> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>-</mo> <mfrac> <mrow> <mi>g</mi> <mrow> <mo>(</mo> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>-</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <msub> <mi>&amp;lambda;</mi> <mi>s</mi> </msub> <mi>&amp;delta;</mi> </mrow> </mfrac> <mo>=</mo> <mfrac> <mn>1</mn> <msub> <mi>&amp;alpha;</mi> <mi>s</mi> </msub> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>t</mi> </mrow> </mfrac> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>r</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>+</mo> <mfrac> <mn>1</mn> <mi>r</mi> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>+</mo> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>z</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>=</mo> <mfrac> <mn>1</mn> <msub> <mi>&amp;alpha;</mi> <mi>b</mi> </msub> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>t</mi> </mrow> </mfrac> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mn>0</mn> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mn>0</mn> <mo>,</mo> <mi>z</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>&amp;infin;</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>&amp;infin;</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>&amp;infin;</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mo>-</mo> <msub> <mi>&amp;lambda;</mi> <mi>b</mi> </msub> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>z</mi> </mrow> </mfrac> <mo>=</mo> <mi>g</mi> <mrow> <mo>(</mo> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>-</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mrow> <mi>s</mi> <mn>0</mn> </mrow> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mn>0</mn> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mrow> <mi>b</mi> <mn>0</mn> </mrow> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> </mrow> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> </mtable> </mfenced>
    Wherein, the Gauss average temperature rising of the sample is
    The surface Gauss average temperature rising of the substrate is
    The stable state temperature of the sample is upgraded to
    The stable state temperature of the substrate is upgraded to
    The Gauss average constant of the exploring laser light isαs、αbThe thermal expansion of respectively described sample and the substrate The rate of dissipating, contact conductanes of the g between the sample and the substrate.
  8. 8. according to the method described in claim 6, it is characterized in that, in step (2-1), the sample that is set for suspension Product, the sample are as follows in the nonstationary thermal conduction equation group of temperature-fall period：
    <mfenced open = "{" close = ""> <mtable> <mtr> <mtd> <mrow> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>r</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>+</mo> <mfrac> <mn>1</mn> <mi>r</mi> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mfrac> <mn>1</mn> <msub> <mi>&amp;alpha;</mi> <mi>s</mi> </msub> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>t</mi> </mrow> </mfrac> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mn>0</mn> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>&amp;infin;</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mrow> <mi>s</mi> <mn>0</mn> </mrow> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> </mtable> </mfenced>
    Wherein, the Gauss average temperature rising of the sample is
    The stable state temperature of the sample is upgraded to
    The Gauss average constant of the exploring laser light isαsFor the thermal diffusivity of the sample.
  9. 9. a kind of dipulse flash of light Raman system for being used to characterize the hot physical property of two-dimension nano materials, which is characterized in that including：
    Sample room, the sample room are used to place sample；
    What heating unit, the first light extraction light path connection sample room of the heating unit, and the heating unit were formed adds Thermal pulse laser is used to heat the sample；
    Detection device, the second light extraction light path of the detection device connect the sample room, and the spy that the detection device is formed Survey the temperature liter data that pulse laser is used to detect the sample；
    Thermal physical property parameter determining device, the thermal physical property parameter determining device are based on the temperature and rise data, determine the sample Thermal physical property parameter；
    Wherein, the first light extraction light path is overlapped with the second light extraction light path part, and the heating that the heating unit is formed The wavelength for the direct impulse laser that pulse laser and the detection device are formed is different, the pulse period is identical.
  10. 10. system according to claim 9, which is characterized in that
    The heating unit includes：
    First laser device, the first laser device are used to form heating laser；And
    First electrooptic modulator, first electrooptic modulator are arranged in the light path of the heating laser, and for by described in Heating laser is converted to heating pulse laser；
    The detection device includes：
    Second laser, the second laser are used to form exploring laser light；And
    Second electrooptic modulator, second electrooptic modulator are arranged in the light path of the exploring laser light, and for by described in Exploring laser light is converted to direct impulse laser；
    The system further comprises：
    Double-channel signal generator, the double-channel signal generator respectively with first electrooptic modulator, it is described second electricity Optical modulator is electrically connected, for regulating and controlling the pulse period of heating pulse laser and direct impulse laser；
    Raman spectrometer, the Raman spectrometer are located at simultaneously in the first light extraction light path and the second light extraction light path, and It is connected with the sample room, and gathers the Raman signal of the sample under the direct impulse laser；
    Temperature rises determination unit, and the temperature rises computing unit and is connected with the Raman spectrometer, and based on institute in the Raman signal The characteristic peak deviant of two-dimension nano materials is stated, determines that the temperature of the sample rises data.
  11. 11. system according to claim 10, which is characterized in that the sample of substrate is equipped with for lower surface,
    The Raman spectrometer can gather the sample and the Raman signal of the substrate under the direct impulse laser,
    The temperature rises computing unit and is based on two-dimension nano materials and the respective characteristic peak of the substrate described in the Raman signal Deviant determines that the first temperature of the sample rises the second temperature liter data of data and the substrate respectively.
  12. 12. system according to claim 11, which is characterized in that the two-dimension nano materials are thin for nonmetallic two-dimensional nano Membrane material is preferably graphene, silene or phosphorus alkene, and the material of the substrate is silica or other have raman characteristic peak Nonmetallic materials；
    Optionally, the wavelength of the direct impulse laser is more than the wavelength of the heating pulse laser；
    Optionally, the direct impulse laser is radiated at the intensity of the upper surface of the sample less than 3mW；
    Optionally, the sample room is connected with vacuum pump, and the vacuum degree of the sample room is smaller than 10-3Pa。
  13. 13. system according to claim 9, which is characterized in that the thermal physical property parameter determining device includes：
    Modeling unit, the modeling unit are used to establish nonstationary thermal conduction equation group of the sample in temperature-fall period；
    Data processing unit, the data processing unit are connected with the modeling unit, and for the Unsteady Heat Transfer side Journey group carries out nondimensionalization processing；
    Thermal physical property parameter determination unit, the thermal physical property parameter determination unit are connected with the data processing unit, and for pair The nonstationary thermal conduction equation group of the nondimensionalization processing carries out multi-parameter fitting processing, and determines the hot physical property ginseng of the sample Number；
    Optionally, the thermal physical property parameter includes at least one of thermal conductivity, thermal diffusivity and contact conductane.
  14. 14. system according to claim 13, which is characterized in that the modeling unit is configured as there is the institute of substrate Sample is stated, the sample for being coupled with the substrate is as follows in the nonstationary thermal conduction equation group of temperature-fall period：
    <mfenced open = "{" close = ""> <mtable> <mtr> <mtd> <mrow> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>r</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>+</mo> <mfrac> <mn>1</mn> <mi>r</mi> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>-</mo> <mfrac> <mrow> <mi>g</mi> <mrow> <mo>(</mo> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>-</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <msub> <mi>&amp;lambda;</mi> <mi>s</mi> </msub> <mi>&amp;delta;</mi> </mrow> </mfrac> <mo>=</mo> <mfrac> <mn>1</mn> <msub> <mi>&amp;alpha;</mi> <mi>s</mi> </msub> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>t</mi> </mrow> </mfrac> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>r</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>+</mo> <mfrac> <mn>1</mn> <mi>r</mi> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>+</mo> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>z</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>=</mo> <mfrac> <mn>1</mn> <msub> <mi>&amp;alpha;</mi> <mi>b</mi> </msub> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>t</mi> </mrow> </mfrac> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mn>0</mn> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mn>0</mn> <mo>,</mo> <mi>z</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>&amp;infin;</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>&amp;infin;</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>&amp;infin;</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mo>-</mo> <msub> <mi>&amp;lambda;</mi> <mi>b</mi> </msub> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>z</mi> </mrow> </mfrac> <mo>=</mo> <mi>g</mi> <mrow> <mo>(</mo> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>-</mo> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mrow> <mi>s</mi> <mn>0</mn> </mrow> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>b</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> <mo>,</mo> <mn>0</mn> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mrow> <mi>b</mi> <mn>0</mn> </mrow> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>z</mi> </mrow> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> </mtable> </mfenced>
    Wherein, the Gauss average temperature rising of the sample is
    The surface Gauss average temperature rising of the substrate is
    The stable state temperature of the sample is upgraded to
    The stable state temperature of the substrate is upgraded to
    The Gauss average constant of the exploring laser light isαs、αbThe thermal expansion of respectively described sample and the substrate The rate of dissipating, contact conductanes of the g between the sample and the substrate.
  15. 15. system according to claim 13, which is characterized in that the modeling unit is configured as what is set for suspension The sample, the sample are as follows in the nonstationary thermal conduction equation group of temperature-fall period：
    <mfenced open = "{" close = ""> <mtable> <mtr> <mtd> <mrow> <mfrac> <mrow> <msup> <mo>&amp;part;</mo> <mn>2</mn> </msup> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <msup> <mi>r</mi> <mn>2</mn> </msup> </mrow> </mfrac> <mo>+</mo> <mfrac> <mn>1</mn> <mi>r</mi> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mfrac> <mn>1</mn> <msub> <mi>&amp;alpha;</mi> <mi>s</mi> </msub> </mfrac> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>t</mi> </mrow> </mfrac> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <mfrac> <mrow> <mo>&amp;part;</mo> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mn>0</mn> <mo>)</mo> </mrow> </mrow> <mrow> <mo>&amp;part;</mo> <mi>r</mi> </mrow> </mfrac> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>&amp;infin;</mi> <mo>,</mo> <mi>t</mi> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <mn>0</mn> </mrow> </mtd> </mtr> <mtr> <mtd> <mrow> <msub> <mi>&amp;theta;</mi> <mi>s</mi> </msub> <mrow> <mo>(</mo> <mrow> <mi>r</mi> <mo>,</mo> <mn>0</mn> </mrow> <mo>)</mo> </mrow> <mo>=</mo> <msub> <mi>&amp;theta;</mi> <mrow> <mi>s</mi> <mn>0</mn> </mrow> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </mtd> </mtr> </mtable> </mfenced>
    Wherein, the Gauss average temperature rising of the sample is
    The stable state temperature of the sample is upgraded to
    The Gauss average constant of the exploring laser light isαsFor the thermal diffusivity of the sample.
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