CN108106730A - Infrared polarization inteference imaging spectrometer based on half ladder half-plane phase reflection mirror - Google Patents
Infrared polarization inteference imaging spectrometer based on half ladder half-plane phase reflection mirror Download PDFInfo
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/021—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using plane or convex mirrors, parallel phase plates, or particular reflectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/447—Polarisation spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/45—Interferometric spectrometry
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Abstract
Infrared polarization inteference imaging spectrometer based on half ladder half-plane phase reflection mirror,It is related to infrared polarization image-forming spectral measurement Instrument technology field,Solve polarization information in existing target scene,Microminaturization and the integrated problem of acquisition and polarization imaging spectral instrument while image information and spectral information,Including collimating mirror,Four-way polarizer,Four-way imaging lens,Beam splitter,Two and half ladder half-plane phase reflection mirrors,Relay imaging mirror and planar array detector,Pass through four-way polarizer,Light field between four-way imaging lens and two and half ladder half-plane phase reflection mirrors, which couples, to be implemented as polarizing the combined modulation with interfering as light field,So as to obtain the four-way polarization interference image of target scene,The polarization of target scene can be obtained simultaneously by single pass,Image and spectral information,With microminiature,Lightweight,It is simple in structure,Integrated level is high,Measuring speed is fast,The advantages that information content is more.
Description
Technical field
The present invention relates to a kind of infrared polarization inteference imagings in infrared polarization image-forming spectral measurement Instrument technology field
Spectrometer, and in particular to a kind of to utilize four-way polarizer, four-way imaging lens and half ladder half-plane phase reflection mirror to light field
Polarization Modulation, array image-forming and distributed phase is carried out to modulate to realize the four-way microminiature infrared polarization of polarization image field interference
Inteference imaging spectrometer.
Background technology
Characteristics of image, spectral signature and polarization characteristic be people identify substance important means, to target image, spectrum and
Effective detection of polarization characteristic substantially increases the ability that people recognize the world.Characteristics of image detects to record the position of object
And strength information, spectral signature detection emits according to specific to different material, reflects, transmitted spectrum can be obtained has with wavelength
The information of pass, polarization characteristic detection can be obtained to be believed with closely related polarizations of characteristics such as object surface structure, surface roughnesses
Breath.With the development of scientific and engineering technology, modern measuring instrument tends to development polarization, spectrum and the Trinitarian multimode of image
Formula detectivity, i.e., integrated polarizing, spectrum and image measurement function on an instrument, to the polarization of same target, spectrum and
Image information progress detects simultaneously, so as to assess objective attribute target attribute in all directions, correctly recognized for people the material world provide more added with
The means of power, while the simplied system structure on the basis of abundant target information, improve system stability.Polarization imaging spectrum skill
Art all uses valency in fields such as space exploration, atmospheric remote sensing, earth remote sensing, machine vision and biomedicines with extremely important
Value, therefore the polarization imaging spectral instrument for combining polarization collection of illustrative plates measurement function has very wide application prospect.
Since image information is the position intensity signal of two dimension, spectral information is one-dimensional wavelength power spectrum information, is polarized
Information is expressed as four-dimensional information with Stokes vector, thus polarization imaging spectrometer needs obtain be multiple dimensions data
Information.But detector is the measurement device of two dimension, and the target information of multiple dimensions how is obtained using the sensitive detection parts of two dimension,
It is that current polarization imaging spectrographic detection technical field needs specifically solve the problems, such as.Infrared polarization imaging spectral Detection Techniques at present
In the infrared polarization imaging spectrometer that generally uses all be utilized in sweep type Infrared Imaging Spectrometer and be inserted into polarizer, pass through
The rotation of polarizer obtains the spectrum data of target scene different polarization states.Due to containing spectral scan in Infrared Imaging Spectrometer
Mechanism is required for carrying out single pass to spectrum in each polarization state, completes a spectral scan rear polarizer and rotate to
Next polarization state, then carry out the spectral scan of next polarization state.Spectral scan and polarizer rotate two motions,
The volume and weight of system is not only increased, while adds the time of system data acquisition.
The content of the invention
Existing infrared polarization imaging spectrometer system bulk is heavy to solve by the present invention, add system data acquisition when
Between so the problems such as cause efficiency low, a kind of infrared polarization inteference imaging based on half ladder half-plane phase reflection mirror is provided
Spectrometer.
In order to realize the object above of the present invention, technical scheme is as follows：
Based on the infrared polarization inteference imaging spectrometer of half ladder half-plane phase reflection mirror, including collimating mirror, four-way
Polarized imaging system, interference system, relay imaging mirror and planar array detector, the four-way polarized imaging system include four-way
Polarizer and four-way imaging lens, the interference system include beam splitter and two and half ladder half-plane phase reflection mirrors；It carries
Directional light is emitted after the collimated mirror of incident light of target polarization profile information, the directional light is modulated to four through four-way polarizer
Polarization image field array is formed after a different polarization state on the image space focal plane of four-way imaging lens；
The beam splitter will polarize after image field array carries out intensity decile and project two and half ladder half-plane phases respectively
On speculum, two relevant polarization image field arrays are formed, described two half ladder half-plane phase reflection mirrors are respectively to polarization
It is respectively polarized in image field array after image field unit carries out phase mass modulation in the form of spatial distribution and returns to beam splitter, and repeated imaging
The interference image of four polarization states is obtained after mirror on planar array detector；
The plane area of one and half ladder half-plane phase reflection mirrors in described two half ladder half-plane phase reflection mirrors
The highest ladder of domain and staircase areas is with height, and on the basis of its plane domain, staircase areas is successively decreased step by step with difference in height h；It is another
The plane domain of a half ladder half-plane phase reflection mirror and the minimum ladder of staircase areas are with height, using its plane domain as base
Standard, staircase areas are incremented by step by step with difference in height h；
It is identical to set the bore of two and half ladder half-plane phase reflection mirrors, is D × D, each half ladder half-plane phase
The size of the plane domain of position speculum is D/2 × D, and the size of staircase areas is D/2 × D；
Described two half ladder half-plane phase reflection mirrors are placed compared with beam splitter mirror image, and one of them half ladder half
The staircase areas of the plane domain of plane phase speculum and another half ladder half-plane phase reflection mirror is compared with beam splitter
In mirror position, the plane domain of staircase areas and another half ladder half-plane phase reflection mirror compared with beam splitter at
In mirror position；
The beam splitter is made of for the light-duty beam splitter with grid rib structure grid rib, beam splitting window and beam splitting coating, the grid
Rib carries out space to beam splitter and splits to form beam splitting window array, and beam splitting coating is located at the upper of beam splitting window upper surface or beam splitting window and grid rib
Surface, grid rib play a supportive role to beam splitting coating；
Grid rib in aperture plate beam splitter is that its is longitudinally wide in horizontal widthTimes, beam splitting window is in horizontal width
It is that its is longitudinally wideTimes, beam splitting window is identical in horizontal and vertical duty cycle；
Grid rib width range in the aperture plate beam splitter is 1nm-100cm, and beam splitting window width scope is 1nm-100cm；
Grid rib thickness range is 1nm-100cm, and beam splitting window thickness range is 1nm-100cm；
The cross-section structure of grid rib in the aperture plate beam splitter is single side rectangle, single side parallelogram, single side are trapezoidal, double
Face rectangle, two-sided parallelogram or two-sided ladder-shaped.
Beneficial effects of the present invention：Infrared polarization interference proposed by the present invention based on half ladder half-plane phase reflection mirror
Imaging spectrometer, be it is a kind of using four-way polarizer to incident field carry out spatial polarization modulation, utilize four-way imaging lens
Array image-forming is carried out to four-way polarized light field, and using two and half ladder half-plane phase reflection mirrors to the picture of each channel of polarization
Field carries out the polarization imaging spectral instrument of spatial phase modulation, passes through four-way polarizer, four-way imaging lens and two and half ranks
Light field coupling between terraced half-plane phase reflection mirror is implemented as polarizing the combined modulation with interfering as light field, so as to obtain target
The four-way polarization interference image of scene, the polarization, image and spectrum that can obtain target scene simultaneously by single pass are believed
Breath, has many advantages, such as microminiature, lightweight, simple in structure, integrated level is high, measuring speed is fast, information content is more.
Description of the drawings
Fig. 1 is that the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror is former
Manage structure chart；
Fig. 2 is in the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror
The imaging viewing field of four-way polarized imaging system and the optical match schematic diagram of half ladder half-plane phase reflection mirror；
Fig. 3 is in the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror
Four-way polarizer Polarization Modulation schematic diagram
Fig. 4 is in the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror
Half ladder half-plane phase reflection mirror is to the interference modulations schematic diagram of four-way imaging light field；
Fig. 5 is in the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror
The structure diagram of half ladder half-plane phase reflection mirror；
Fig. 6 is in the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror
Four-way imaging lens image space telecentric imaging schematic diagram；
Fig. 7 is in the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror
Relay imaging mirror object space telecentric imaging schematic diagram；
Fig. 8 is in the infrared polarization inteference imaging spectrometer of the present invention based on half ladder half-plane phase reflection mirror
Four-way polarization interference image schematic diagram；
Fig. 9 is the top view of aperture plate beam splitter structure；
Figure 10 is the level and vertical gate rib structure diagram of ten kinds of grizzly bar beam splitters, wherein Figure 10 a of left part, is schemed
10c, Figure 10 e, Figure 10 g, Figure 10 i, Figure 10 k, Figure 10 m, Figure 10 o, Figure 10 q and Figure 10 s are that the main view of ten kinds of grizzly bar beam splitters is cutd open
Face figure；T points of Figure 10 b, Figure 10 d, Figure 10 f, Figure 10 h, Figure 10 j, Figure 10 l, Figure 10 n, Figure 10 p, Figure 10 r and Figure 10 of right part
The left view sectional view of main view sectional view Wei not corresponded to；
Figure 11 a to Figure 11 f are respectively two-sided grid rib section shape schematic diagram in Figure 11；
Figure 12 is the manufacturing process schematic diagram of four-way grid pellicular beamsplitters；
Figure 13 is the process signal that one and half ladder half-plane phase reflection mirrors are formed by the method for multiple film deposition
Figure；
Figure 14 is the process schematic that one and half ladder half-plane phase reflection mirrors are formed by the method for multiple etching；
Figure 15 is the process that one and half ladder half-plane phase reflection mirrors are formed by first etching again the mixed method of plated film
Schematic diagram；
Figure 16 shows to form the process of another half ladder half-plane phase reflection mirror by the method for multiple film deposition
It is intended to；
Figure 17 is the process schematic that another half ladder half-plane phase reflection mirror is formed by the method for multiple etching；
Figure 18 is the mistake that another half ladder half-plane phase reflection mirror is formed by first etching again the mixed method of plated film
Journey schematic diagram.
Specific embodiment
With reference to Fig. 1 to Figure 18 illustrate present embodiment, it is proposed by the present invention based on half ladder half-plane phase reflection mirror
Infrared polarization inteference imaging spectrometer, including collimating mirror 1, four-way polarizer 2, four-way imaging lens 3, beam splitter 4, half ladder
Half-plane phase reflection mirror 5, half ladder half-plane phase reflection mirror 6, relay imaging mirror 7 and planar array detector 8.
Collimating mirror 1 collimates the incident light for carrying target image, spectrum and polarization information for directional light, four-way polarizer
Parallel light field is divided into four parallel channel of polarization by 2 in horizontal space according to different polarization states.Incident field is by four
Passage polarizer 2 is modulated to four kinds of different polarization states, can be four tools by 2 modulated light field of four-way polarizer
There is the linear polarization in different polarization direction or a combination of linear polarization and circular polarization state.
Four light fields with different polarization state are imaged by four-way imaging lens 3 on its image space focal plane, shape
Into the polarization image field array arranged in a manner of 2 × 2, and each polarization image field unit corresponds to a kind of polarization state.And beam splitting
Device 4 will project half ladder half-plane phase reflection mirror 5 respectively after polarizing image field array progress intensity decile and half ladder half is flat
On face phase reflection mirror 6, it is divided into two relevant polarization image field arrays compared with beam splitter so as to which image field array will be polarized.Two
Cross polarization image field is respectively by half ladder half-plane phase reflection mirror 5 and the different ladders of half ladder half-plane phase reflection mirror 6
Region returns to beam splitter after the phase mass modulation in the form of spatial distribution, by relay imaging mirror 7, with being put down by two and half ladders half
The light field of the plane domain reflection of face phase reflection mirror coherent superposition on planar array detector 8, forms what is arranged in a manner of 2 × 2
Polarization interference pattern matrix.
The staircase areas of one and half ladder half-plane phase reflection mirrors 5 and another half ladder half-plane phase reflection mirror 6
Plane domain the phase difference of a spatial distribution generated to the relevant image fields of two passages in four channel of polarization modulate sequence
Row, the plane domain of one and half ladder half-plane phase reflection mirrors 5 and the ladder of another half ladder half-plane phase reflection mirror 6
Region also generates the relevant image field of other two passage in four channel of polarization the phase difference modulation sequence of one spatial distribution
Row by rationally designing the structure and parameter of two and half ladder half-plane phase reflection mirrors, make the corresponding phase of four channel of polarization
Dry image field has identical phase difference modulation sequence, and again after coherent superposition, four polarization interference elementary areas of formation carry
Identical phase distribution information, so as to fulfill the integrated detection of polarization information, interference information and image-forming information.By to target
Scene is scanned, the stepping visual field scanned every time correspond to ladder width on half ladder half-plane phase reflection mirror away from
From so as to obtain the interference image data cube of corresponding four polarization states, being polarized to polarization interference image data cube
Shearing, interference shearing, image mosaic, interference splicing, spectrum recovering and polarization resolve, you can draw the image of incident scene objects
Information, spectral information and Stokes polarization information.
Illustrate present embodiment with reference to Fig. 2, each channel of polarization and four of the four-way polarizer 2 described in present embodiment
Each imaging band of passage imaging lens 3 corresponds, and the imaging viewing field of each imaging band corresponds to half ladder half-plane
The region of a quarter on 5 and half ladder half-plane phase reflection mirror 6 of phase reflection mirror, that is, its staircase areas two/
One or the half of plane domain, so that a channel of polarization corresponds to an interference image.Four-way imaging lens 3 it is each
The image space of a imaging band is circular visual field, is set to Φ1, one and half ladder half-plane phase reflection mirrors 5 and another half
Ladder half-plane phase reflection mirror 6 is square aperture, is set to D × D, then the size of plane domain be D/2 × D, staircase areas
Size for D/2 × D, in order to realize that the light field between four-way imaging lens and half ladder half-plane phase reflection mirror couple, justify
It is the tangent structure that connects of four-way between shape imaging viewing field and square aperture.Each circular image space 9 of four-way imaging lens
It is tangent with two center lines of half ladder half-plane phase reflection mirror respectively while corresponding to half ladder half-plane phase reflection mirror
Angle point connects.Therefore, the visual field Φ of each imaging band of four-way imaging lens1With the length of side of half ladder half-plane phase reflection mirror
Relation between D is
In order to ensure four imaging bands on half ladder half-plane phase reflection mirror have identical imaging viewing field, respectively into
As the size that passage is located at the effective viewing field 10 of effective interference region on half ladder half-plane phase reflection mirror isThat is half ladder half-plane phase reflection mirror corresponds to the staircase areas and plane of each channel of polarization
The effective area in region isWhile in order to realize relay imaging mirror 7 and half ladder half-plane phase
The coupled transfer of light field between the speculum of position, if the true field 11 of relay imaging mirror is Φ2, then Φ2With half ladder half-plane
Relation between phase reflection mirror length of side D is
Illustrate present embodiment with reference to Fig. 3, the four-way polarizer 2 described in present embodiment is to the polarization shape of incident field
State carries out spatial modulation.Four-way polarizer 2 can be four have different polarization direction linear polarizer arrays or
The combining structure of linear polarizer and wave plate.Linear polarizer is using zinc selenide (ZnSe), zinc sulphide (ZnS), silicon (Si), silver chlorate
(AgCl), by replicating in material surface or depicting groove, and intensive parallel gold is deposited in the infrared transmission materials such as polyethylene
Belong to line, metal line materials are aluminium (Al), golden (Au) or chromium (Cr), form wiregrating, realize the modulation to incident light polarization state.Line is inclined
Shake planarity requirements≤λ/20 on two surfaces of piece, and surface roughness requirements≤3nm, λ is wavelength.When four-way polarizer 2 is adopted
When being respectively 0 °, 45 °, 90 ° and 135 ° of four linear polarizer arrays with polarization direction, incident field passes through four-way polarizer
0 °, 45 °, 90 ° and 135 ° of four linear polarization states will be modulated to afterwards；And when adding in wave plate after linear polarizer, outgoing
Light field will be modulated to circular polarization state.Fig. 3 a are when four-way polarizer uses 0 °, 45 °, 90 ° and 135 ° four polarization sides
To linear polarizer array when, the polarization state of optical output field array is 0 ° of linear polarization 2-1,45 ° of linear polarization 2-2, and 90 ° of lines are inclined
Polarization state 2-3 and 135 ° of linear polarization 2-4.Fig. 3 b are the combining structure using linear polarizer array and wave plate when four-way polarizer
When optical output field four polarization states, the polarization direction of wherein linear polarizer array is respectively 0 °, 60 °, 120 ° and 45 °, together
When a quarter-wave plate is inserted into after 45 ° of linear polarizers, so as to which the polarization state of optical output field is 0 ° of linear polarization 2-1,60 °
Linear polarization 2-5,120 ° of linear polarization 2-6 and circular polarization state 2-7.
Illustrate present embodiment with reference to Fig. 4, the rank of one and half ladder half-plane phase reflection mirrors 5 described in present embodiment
Terraced region and the plane domain of another half ladder half-plane phase reflection mirror 6 are in mirror position compared with beam splitter,
The staircase areas and another half ladder half-plane phase reflection of one half ladder half-plane phase reflection mirror 5
The phase difference that the plane domain of mirror 6 polarizes four-way two channel of polarization image fields in image field is modulated；One and half ladders
The staircase areas of the plane domain of half-plane phase reflection mirror 5 and another half ladder half-plane phase reflection mirror 6 is to four-way
The phase difference of other two channel of polarization image field is modulated in polarization image field.When four-way polarizer selection polarization direction difference
During 0 °, 45 °, 90 ° and 135 ° of four linear polarizer arrays, the staircase areas 5-1 of one and half ladder half-plane phase reflection mirrors 5
With the plane domain 6-1 of another half ladder half-plane phase reflection mirror 6 to the phase of 0 ° and 135 ° two linear polarization passage image fields
Potential difference is modulated, and the plane domain 5-2 of one and half ladder half-plane phase reflection mirrors 5 and another half ladder half-plane phase
The staircase areas 6-2 of position speculum 6 is modulated the phase difference of 45 ° and 90 ° two linear polarization passage image fields, so that four
The imaging light field of channel of polarization is subject to interference modulations.
The ladder height h of staircase areas and ladder series in half ladder half-plane phase reflection mirror described in present embodiment
N is determined by the modulation sequence of the phase difference of two separated coherent beams of beam splitter.In order to ensure the imaging of four channel of polarization
Light field has identical phase difference modulation sequence, plane domain and its stepped region of one and half ladder half-plane phase reflection mirrors 5
The highest ladder in domain is with high, and the plane domain of another half ladder half-plane phase reflection mirror 6 and its staircase areas is minimum
Ladder is the same as high.
Illustrate present embodiment, one and half ladder half-plane phase reflection mirrors 5 and another half ladder half-plane with reference to Fig. 5
Planarity requirements≤λ/20 of 6 each ladder unit of phase reflection mirror and plane domain, surface roughness requirements≤3nm.One
The staircase areas and plane domain of half ladder half-plane phase reflection mirror 5 respectively account for the half of its overall dimension, but staircase areas
Effective interference region 5-4 of effective interference region 5-3 and plane domain is its overall dimensionTimes.With one and half ranks
On the basis of the plane domain of terraced half-plane phase reflection mirror 5, staircase areas is successively decreased step by step with ladder height h, staircase areas
Highest ladder and plane domain there is same height.In order to realize effectively Model of Interferogram Sampling, ladder height requirement h≤λ/
4.The plane domain and staircase areas of another half ladder half-plane phase reflection mirror 6 respectively account for the half of its overall dimension, but flat
Effective interference region 6-3 in face region and effective interference region 6-4 of staircase areas is its overall dimensionTimes.With
On the basis of the plane domain of another half ladder half-plane phase reflection mirror 6, staircase areas is incremented by step by step with ladder height h,
The minimum ladder of its staircase areas has identical height with plane domain.By another half ladder half-plane phase reflection mirror 6
Plane domain 6-1 and one and half ladder half-plane phase reflection mirrors 5 staircase areas 5-1 minimum ladder compared with beam splitter
Mirror image overlaps, then the plane domain 5-2 of one and half ladder half-plane phase reflection mirrors 5 and another half ladder half-plane phase are anti-
The highest ladder for penetrating the staircase areas 6-2 of mirror 6 is overlapped compared with beam splitter mirror image, thus two and half ladder half-plane phase reflections
Mirror just generates incident field identical phase difference sequence.
If the wave number of lightwave signal is ν, then corresponding phase between the half two neighboring ladder of ladder half-plane phase reflection mirror
Potential difference isIt is flat so as to the staircase areas 5-1 and another half ladder half of one and half ladder half-plane phase reflection mirrors 5
The plane domain 6-1 of face phase reflection mirror 6 will be formedPhase difference sequence, half rank
The plane domain 5-2 of terraced half-plane phase reflection mirror 5 shapes similary with the staircase areas 6-2 of half ladder half-plane phase reflection mirror 6
IntoPhase difference sequence.The interference image of such four polarization imaging passages will be right
Answer identical phase difference sequence.
Illustrate present embodiment with reference to Fig. 6, the four-way imaging lens 3 described in present embodiment are by the light of four channel of polarization
Field is imaged onto the different quadrants of two and half ladder half-plane phase reflection mirrors, so as to form 2 × 2 polarization image array.Four-way
Road imaging lens work in infrared band, are made of infrared optical materials such as silicon, germanium, zinc selenide, zinc sulphide.In order to inhibit four-way
The crosstalk of light field and the corresponding each interference of half ladder half-plane phase reflection mirror between the corresponding each channel of polarization of road imaging lens
The crosstalk of light field between passage, each imaging band of four-way imaging lens 3 use telecentric beam path in image space structure.Four-way into
As mirror 3 by preceding form as lens array 3-1, it is rear form as lens array 3-2 and diaphragm array 3-3 are formed, wherein group imaging lens battle array afterwards
The object space focal plane that mirror unit is each imaged in row 3-2 is formed positioned at preceding as lens array 3-1 on corresponding imaging mirror unit, diaphragm battle array
Each diaphragm unit of 3-3 is arranged before each imaging mirror unit of the preceding composition as lens array 3-1, and diaphragm array 3-3
Polarizer unit is inlayed in each diaphragm unit.Therefore, the position of diaphragm array 3-3 is the position of four-way polarizer 2,
For the exit pupil position of collimating mirror 1, so as to fulfill being connected for four-way imaging lens and collimating mirror pupil.Target object as a result,
12, by collimating mirror 1, four-way polarizer 2 and four-way imaging lens, polarization image array 13 is formed on its image space focal plane,
And the chief ray of the imaging beam of each polarization image unit is perpendicular to each reflecting surface of half ladder half-plane phase reflection mirror.
Illustrate present embodiment with reference to Fig. 7, the relay imaging mirror 7 described in present embodiment by four-way imaging lens 3 into
Two 2 × 2 polarization image arrays on two and half ladder half-plane phase reflection mirrors are added on infrared planar array detector 8 and are formed
Polarization interference pattern matrix.Relay imaging mirror works in infrared band, using the infrared optics material such as silicon, germanium, zinc selenide, zinc sulphide
Material makes.Infrared planar array detector 8 is made of infrared focal plane array 8-1 and cold screen diaphragm 8-2, infrared focal plane array 8-1
Using indium antimonide (InSb) or mercury cadmium telluride (HgCdTe) material.Relay imaging mirror 7 is using object space telecentric beam path structure, it is necessary to four
The matching for meeting numerical aperture is needed between passage imaging lens 3, and the emergent pupil of relay imaging mirror 7 needs to visit with infrared surface battle array
The cold screen diaphragm for surveying device 8 matches.The exit pupil position of relay imaging mirror 7 is arranged on its image space focal plane, and will be infrared
The cold screen diaphragm 8-2 of planar array detector is overlapped with the image space focal plane of relay imaging mirror, while ensures that half ladder half-plane phase is anti-
The object-image relation of mirror and infrared planar array detector focal plane arrays (FPA) is penetrated, then realizes relay imaging system emergent pupil and cold screen light
The matching of door screen, so that the chief ray of the incident beam of the polarization image unit from two and half ladder half-plane phase reflection mirrors
Parallel to optical axis, the final interference imaging on planar array detector focal plane arrays (FPA) 8-1.If the image-side numerical of four-way imaging lens 3
Aperture is NA1, the object-side numerical aperture of relay imaging mirror 7 is NA2, then the matching of numerical aperture should meet relation NA2=NA1.By
This, through four-way imaging lens into the 13 repeated imaging lens of polarization image array on two and half ladder half-plane phase reflection mirrors
7 on the focal plane arrays (FPA) of planar array detector 8 coherent superposition be polarization interference pattern matrix 14.
Illustrate present embodiment with reference to Fig. 8, the planar array detector 8 described in present embodiment is used to receive polarization interference image
Array.Polarization interference pattern matrix is made of four polarization interference elementary areas, each polarization interference elementary area corresponds to
One polarization state of light field.When the polarizer of 0 °, 45 °, 90 ° and 135 ° four polarization direction is respectively adopted in four channel of polarization
When, polarization interference elementary area 14-1 corresponds to 0 ° of polarization state interference image, and polarization interference elementary area 14-2 corresponds to 45 ° of polarization states
Interference image, polarization interference elementary area 14-3 correspond to 90 ° of polarization state interference images, and polarization interference elementary area 14-4 is corresponded to
135 ° of polarization state interference images.The gradation of image of each polarization interference elementary area is subject to half ladder half-plane phase reflection
The spatially distributed phase-modulation of mirror so that each polarization interference elementary area be interference fringe to intensity image into
The modulation picture that row modulation is formed.
Beam splitter described in present embodiment uses parallel plate structure in infrared band, by beam-splitting board and compensating plate structure
Into, beam-splitting board using infrared optical materials such as zinc selenide (ZnSe), potassium bromide (KBr) or cesium iodides (CsI) as base material,
Or using semi-conducting materials such as undoped silicon (Si), germanium (Ge) and GaAs (GaAs) as base material；Compensating plate is adopted
With the base material identical with beam-splitting board.Beam-splitting board and planarity requirements≤λ/20 on two surfaces of compensating plate, surface roughness
It is required that≤3nm.For the substrate of high index of refraction, first surface need not plate beam splitting coating, it is only necessary to increase in second surface plating
Permeable membrane.For the substrate of low-refraction, it is only necessary to deposit broadband beam splitting coating on first surface of substrate, approach its reflectivity
0.5.And for the substrate of middle refractive index, it both needs to plate beam splitting coating, it is also desirable to anti-reflection film.When the silicon materials using high index of refraction
During substrate as semiconductor beam splitter, it is 3.4 that silicon substrate material, which corresponds to refractive index, and coating material can be with selected as germanium and poly-
Ethylene or polypropylene.The intensity reflectance difference in different polarization direction can by reduce incidence angle of the light beam on beam splitter and
Reduce.By the dimension D of half ladder half-plane phase reflection mirror, and beam-splitting board and compensating plate are placed with optical axis direction in 45 °, then are divided
The size of beam plate and compensating plate is
Illustrate present embodiment with reference to Fig. 9 to Figure 11, four-way grid beam splitter, four-way grid can also be used in beam splitter
Pellicular beamsplitters are that beam splitting film is supported using four-way network.Since beam splitting film is too thin, it is impossible to self-supporting,
Beam splitting film support is lived using four-way network.Four-way network uses semi-conducting material, and beam splitting film uses
Polyester film.Four-way network needs the structure with half ladder half-plane phase reflection mirror to be mutually matched.Four-way grid
Pellicular beamsplitters are with systematic optical axis in 45 ° of placements, and by the geometric parameter of half ladder half-plane phase reflection mirror, four-way grid is thin
The size of each passage of film beam splitter isThe network of four-way grid pellicular beamsplitters is by grid rib 3-1
It is formed with beam splitting window 3-2, window edge is that its is longitudinally wide in horizontal widthTimes, window is its longitudinal direction in horizontal width
WidthTimes, window has identical duty cycle horizontal and vertical.Since the size of window determines that the light of system leads to
Amount, therefore the area of window is far longer than the area of window edge.Each window is on two and half ladder half-plane phase reflection mirrors
Projection should cover the effective viewing field region for corresponding to each imaging band on each half ladder half-plane phase reflection mirror.Therefore,
The size of each window of four-way grid pellicular beamsplitters should be greater than being equal to
Illustrate present embodiment with reference to Figure 12, for four-way grid pellicular beamsplitters, carry out four-way grid knot first
The making of structure.Four-way network is made of micro-opto-electromechanical system (MOEMS) technique, chooses undoped silicon (Si), germanium
(Ge) and the semi-conducting materials such as GaAs (GaAs) are as substrate, one layer of photoresist of spin coating first on semiconductor base materials,
Then the mask plate with four-way grid pattern is placed in the substrate of the complete photoresist of spin coating, by exposed and developed, removal
Photoresist at the window's position exposes the semiconductor substrate surface at the window's position, such as Figure 12 a.Then it is rotten using wet method
Erosion or dry etching technology remove the semiconductor base materials at the window's position, engraved structure are formed, such as Figure 12 b.Finally remove
Photoresist at window edge position just forms four-way network, such as Figure 12 c.Polyester film is fixed on four-way grid knot
On structure, polyester film is supported using window edge, the beam splitting of polyester film is realized using window, is finally completed four-way grid
The making of pellicular beamsplitters, such as Figure 12 d.
Illustrate present embodiment with reference to Figure 13, one and half ladder half-plane phase reflection mirrors 5 are in glass, quartz
(SiO2), silicon (Si), germanium (Ge), in the substrate of materials such as GaAs (GaAs), the method for passing through multiple film deposition forms half
Ladder half-plane structure；First in glass, quartz (SiO2), the substrate rotation of silicon (Si), germanium (Ge), the materials such as GaAs (GaAs)
It applies one layer of photoresist as depicted in fig. 13 a, by mask, exposed and developed, removes the staircase areas of one fixed width and entire plane
The photoresist in region exposes the staircase areas of one fixed width and the substrate surface of entire plane domain, as illustrated in fig. 13b, then
Certain thickness film layer is deposited using coating process such as electron beam evaporation or magnetron sputterings, as shown in figure 13 c, then removes mask portion
The photoresist and film layer divided, staircase areas just forms two step structures, and plane domain and the highest step of staircase areas are same
Height, as shown in figure 13d.Then gluing, mask, exposed and developed is carried out to the structure again, in each step of staircase areas
On be exposed independent from the surface of one fixed width, while expose the surface of entire plane domain, as shown in figure 13e, then again using electricity
The coating process such as beamlet evaporation or magnetron sputtering carry out film deposition, which is the one of last plated film thicknesses of layers
Half, as shown in figure 13f.The photoresist and film layer of masking part are finally removed, staircase areas just forms four step structures, and puts down
Face region is still same high with the highest step of staircase areas, as shown in Figure 13 g.The process is cycled, on the thickness of each film layer is
The half of thicknesses of layers can obtain half ladder half-plane phase reflection mirror structure of needs.
Illustrate present embodiment with reference to Figure 14, half ladder half-plane phase reflection mirror 5 can also be in silicon (Si), germanium (Ge)
In the semiconductor base materials such as GaAs (GaAs), the method for passing through multiple etching forms half ladder half-plane structure；First
The semi-conducting materials such as silicon (Si), germanium (Ge) and GaAs (GaAs) one layer of photoresist of substrate spin coating as shown in figures 14a, pass through
Mask, exposed and developed, the photoresist of one fixed width in removal staircase areas expose the substrate table of the staircase areas of one fixed width
Face as shown in fig. 14b, then carries out exposed substrate surface using wet etching or dry etch process the quarter of certain depth
Erosion, as shown in figure 14 c, then removes the photoresist of masking part, and staircase areas just forms two step structures, and plane domain with
The highest step of staircase areas is with height, as shown in Figure 14 d.Then gluing, mask, exposed and developed is carried out to the structure again,
The substrate surface of one fixed width is exposed independent from each step of staircase areas, it is as shown in figure 14e, then rotten using wet method again
Erosion or dry etch process carry out exposed substrate surface the etching of certain depth, and etching depth is last etching depth
Half, as shown in figure 14f.The photoresist of masking part is finally removed, staircase areas just forms four step structures, and plane area
Domain is still same high with the highest ladder of staircase areas, as shown in Figure 14 g.The process is cycled, each etching depth is last quarter
The half of depth is lost, half ladder half-plane phase reflection mirror structure of needs can be obtained.
Illustrate present embodiment with reference to Figure 15, half ladder half-plane phase reflection mirror 5 can also silicon (Si), germanium (Ge) and
In the substrates of semi-conducting materials such as GaAs (GaAs), half ladder half-plane knot is formed by the mixed method for first etching again plated film
Structure；First in one layer of photoresist of substrate spin coating such as Figure 15 a institutes of the semi-conducting materials such as silicon (Si), germanium (Ge) and GaAs (GaAs)
Show, by mask, exposed and developed, remove the photoresist of one fixed width in staircase areas, expose the staircase areas of one fixed width
Substrate surface, as illustrated in fig. 15b, then exposed substrate surface is carried out using wet etching or dry etch process certain
The etching of depth as shown in fig. 15 c, then removes the photoresist of masking part, and staircase areas just forms two step structures, and puts down
The highest ladder of face region and staircase areas is with height, as shown in Figure 15 d.Then gluing, mask, exposure are carried out to the structure again
And development, the surface of one fixed width is exposed independent from each step of staircase areas, while expose the surface of entire plane domain,
As shown in Figure 15 e, film deposition then is carried out using coating process such as electron beam evaporation or magnetron sputterings, on which is
The half of etching depth, as shown in fig.15f.The photoresist and film layer of masking part are finally removed, staircase areas is just formed
Four step structures, and plane domain is still same high with the highest ladder of staircase areas, as shown in fig.15g.In practical operation
Cheng Zhong by first cycling etching process, forms the ladder of certain series, recycles coating process, may finally obtain needs
Half ladder half-plane phase reflection mirror structure.
After half ladder half-plane phase reflection mirror structure fabrication is completed, in half ladder half-plane phase reflection mirror structure table
The reflective coating of the highly reflective materials such as face gold evaporation (Au), aluminium (Al) ultimately forms half ladder half-plane phase reflection mirror 5.
Illustrate present embodiment with reference to Figure 16, another half ladder half-plane phase reflection mirror 6 is in glass, quartz
(SiO2), silicon (Si), germanium (Ge), in the material substrates such as GaAs (GaAs), the method for passing through multiple film deposition forms half rank
Terraced half-plane structure；First in glass, quartz (SiO2), the substrate spin coating of silicon (Si), germanium (Ge), the materials such as GaAs (GaAs)
One layer of photoresist as illustrated in fig 16 a, passes through mask, exposed and developed, the photoresist of one fixed width, exposing in removal staircase areas
The substrate surface of one fixed width staircase areas, as shown in fig 16b, then using coating process such as electron beam evaporation or magnetron sputterings
Certain thickness film layer is deposited, as shown in figure 16 c, then removes the photoresist and film layer of masking part, staircase areas just forms two
A step structure, and plane domain and the minimum step of staircase areas are same high, as shown in figure 16d.Then again to the structure into
It is row gluing, mask, exposed and developed, the surface of one fixed width is exposed independent from each step of staircase areas, such as Figure 16 e institutes
Show, then carry out film deposition using coating process such as electron beam evaporation or magnetron sputterings again, which is last
The half of plated film thicknesses of layers, as shown in Figure 16 f.The photoresist and film layer of masking part are finally removed, staircase areas is just formed
Four step structures, and plane domain is still same high with the minimum step of staircase areas, as shown in Figure 16 g.The process is cycled, often
The thickness of secondary film layer is the half of last thicknesses of layers, can obtain half ladder half-plane phase reflection mirror knot of needs
Structure.
Illustrate present embodiment with reference to Figure 17, half ladder half-plane phase reflection mirror 6 or in silicon (Si), germanium (Ge) and arsenic
Change in the semiconductor base materials such as gallium (GaAs), half ladder half-plane structure is formed by the method for multiple etching；First in silicon
(Si), one layer of photoresist of substrate spin coating of the semi-conducting materials such as germanium (Ge) and GaAs (GaAs) as illustrated in fig 17 a, by covering
It is mould, exposed and developed, the staircase areas of one fixed width and the photoresist of entire plane domain are removed, exposes the ladder of one fixed width
Region and the substrate surface of entire plane domain, as illustrated in fig. 17b, then using wet etching or dry etch process to exposed
Substrate surface carry out the etching of certain depth, as shown in fig. 17 c, then remove the photoresist of masking part, staircase areas just shape
Into two step structures, and plane domain and the minimum step of staircase areas are same high, as shown in Figure 17 d.Then again to the knot
Structure carries out gluing, mask, exposed and developed, the substrate surface of one fixed width is exposed independent from each step of staircase areas, together
When expose the surface of entire plane domain, as shown in Figure 17 e, then again using wet etching or dry etch process to exposed
Substrate surface carry out certain depth etching, etching depth is the half of last etching depth, as shown in Figure 17 f.Finally
Remove the photoresist of masking part, staircase areas just forms four step structures, and plane domain still with staircase areas most
Low order ladder is with height, as shown in Figure 17 g.The process is cycled, each etching depth is the half of last etching depth, can be obtained
The half ladder half-plane phase reflection mirror structure that must be needed.
Illustrate present embodiment with reference to Figure 18, half ladder half-plane phase reflection mirror 6 or in silicon (Si), germanium (Ge) and arsenic
Change in the substrates of semi-conducting materials such as gallium (GaAs), half ladder half-plane knot is formed by the mixed method for first etching again plated film
Structure；First in one layer of photoresist of substrate spin coating such as Figure 18 a institutes of the semi-conducting materials such as silicon (Si), germanium (Ge) and GaAs (GaAs)
Show, pass through mask, exposed and developed, the photoresist of removal one fixed width staircase areas and entire plane domain, one fixed width of exposing
The substrate surface of the staircase areas of degree and entire plane domain, as shown in fig. 18b, then using wet etching or dry etching work
Skill carries out exposed substrate surface the etching of certain depth, as shown in Figure 18 c, then removes the photoresist of masking part, ladder
Region just forms two step structures, and plane domain and the minimum ladder of staircase areas are same high, as shown in Figure 18 d.Then again
It is secondary that gluing, mask, exposed and developed is carried out to the structure, the table of one fixed width is exposed independent from each step of staircase areas
Face as shown in Figure 18 e, then carries out film deposition, the thicknesses of layers using coating process such as electron beam evaporation or magnetron sputterings
It is the half of last etching depth, as shown in Figure 18 f.The photoresist and film layer of masking part are finally removed, staircase areas is just
Four step structures are formed, and plane domain is still same high with the minimum ladder of staircase areas, as shown in Figure 18 g.In actual behaviour
During work, by first cycling etching process, the ladder of certain series is formed, coating process is recycled, may finally be needed
The half ladder half-plane phase reflection mirror structure wanted.
After half ladder half-plane phase reflection mirror structure fabrication is completed, in half ladder half-plane phase reflection mirror structure table
It is anti-to ultimately form another half ladder half-plane phase for the reflective coating of the highly reflective materials such as face gold evaporation (Au), aluminium (Al)
Penetrate mirror 6.
Obviously, the above embodiments are merely examples for clarifying the description, and is not intended to limit the embodiments.Only
Function is wanted not change, the infrared polarization inteference imaging spectrometer based on half ladder half-plane phase reflection mirror is in the base of above description
On plinth, primary element can be made other variations or changes in different ways without departing from the scope of the present disclosure, here need not
Also all embodiments can not be exhaustive.And the obvious changes or variations thus extended out is still in this hair
Among the protection domain of bright creation.
Claims (10)
1. based on the infrared polarization inteference imaging spectrometer of half ladder half-plane phase reflection mirror, including collimating mirror (1), four-way
Polarized imaging system, interference system, relay imaging mirror (7) and planar array detector (8), it is characterized in that；
The four-way polarized imaging system includes four-way polarizer (2) and four-way imaging lens (3), the interference system bag
Include beam splitter (4) and two and half ladder half-plane phase reflection mirrors；
The collimated mirror of incident light (1) for carrying target polarization profile information is emitted directional light afterwards, and the directional light is inclined through four-way
The device (2) that shakes is modulated to after four different polarization states form polarization image field battle array on the image space focal plane of four-way imaging lens (3)
Row；
The beam splitter (4) will polarize image field array and carry out after intensity decile that project two and half ladder half-plane phases respectively anti-
It penetrates on mirror, forms two relevant polarization image field arrays, described two half ladder half-plane phase reflection mirrors are respectively to polarizing picture
Image field unit is respectively polarized in array and carries out return beam splitter (4) after phase mass modulation in the form of spatial distribution, and it is repeated into
Interference image as obtaining four polarization states after mirror (7) on planar array detector；
The plane domain of one and half ladder half-plane phase reflection mirrors in described two half ladder half-plane phase reflection mirrors with
The highest ladder of staircase areas is with height, and on the basis of its plane domain, staircase areas is successively decreased step by step with difference in height h；Another half
The plane domain of ladder half-plane phase reflection mirror and the minimum ladder of staircase areas are the same as height, on the basis of its plane domain, rank
Terraced region is incremented by step by step with difference in height h；
It is identical to set the bore of two and half ladder half-plane phase reflection mirrors, is D × D, each half ladder half-plane phase is anti-
The size of the plane domain of mirror is penetrated as D/2 × D, the size of staircase areas is D/2 × D；
Described two half ladder half-plane phase reflection mirrors are placed compared with 3 mirror image of beam splitter, and one of them half ladder half is flat
The staircase areas of the plane domain of face phase reflection mirror and another half ladder half-plane phase reflection mirror is compared with beam splitter (3)
In mirror position, the plane domain of staircase areas and another half ladder half-plane phase reflection mirror is compared with beam splitter
(3) it is in mirror position；
The beam splitter (3) is made of for the light-duty beam splitter with grid rib structure grid rib, beam splitting window and beam splitting coating, the grid rib
Space is carried out to beam splitter to split to form beam splitting window array, beam splitting coating is located at beam splitting window upper surface or the upper table of beam splitting window and grid rib
Face, grid rib play a supportive role to beam splitting coating；
Grid rib in aperture plate beam splitter is that its is longitudinally wide in horizontal widthTimes, beam splitting window is that it is vertical in horizontal width
To widthTimes, beam splitting window is identical in horizontal and vertical duty cycle；
Grid rib width range in the aperture plate beam splitter is 1nm-100cm, and beam splitting window width scope is 1nm-100cm；Grid rib
Thickness range is 1nm-100cm, and beam splitting window thickness range is 1nm-100cm；
The cross-section structure of grid rib in the aperture plate beam splitter is single side rectangle, single side parallelogram, single side are trapezoidal, two-sided square
Shape, two-sided parallelogram or two-sided ladder-shaped.
2. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that；The preparation of beam splitter is realized using ultraprecise machining process and MOEMS technologies；
Use ultraprecise machining process preparation process for：It is obtained in substrate by integral cutting, grinding and polishing technology
Grid rib and beam splitting window, then whole vapor deposition beam splitting coating, complete device and prepare；
The preparation for realizing beam splitter using MOEMS technologies is realized by following steps：
Step 1: choosing monocrystalline silicon as substrate, and masking film is prepared in the monocrystalline silicon surface；
Step 2: orientation photoetching, removes the masking film in flash trimming slot figure by etching method, exposes side slot figure；Using monocrystalline silicon
Anisotropic etchant edge etching slot, side groove corrosion depth are equal to the final thickness of beam splitting window；
Step 3: second of photoetching, by etching the masking film in removal beam splitting window figure, exposes beam splitting window figure；Using list
Edge etching slot and beam splitting window, corrosion depth to side groove corrosion to thickness are 0 to crystal silicon anisotropic etchant simultaneously, and beam splitting window reaches
Final thickness；
Step 4: the masking film of removal grid edge surface, whole that beam splitting coating is deposited, the preparation of beam splitter is completed.
3. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that；When one of them half ladder half-plane phase reflection mirror (5) staircase areas minimum ladder with another half
When the plane domain of ladder half-plane phase reflection mirror (6) is overlapped compared with beam splitter (3) mirror image, the half ladder half-plane phase
The highest ladder of the staircase areas of the plane domain of speculum and another half ladder half-plane phase reflection mirror (6) compared with point
Beam device (4) mirror image overlaps, if corresponding phase difference is between the half two neighboring ladder of ladder half-plane phase reflection mirrorThen the plane domain of two and half ladder half-plane phase reflection mirrors is respectively formed with staircase areasPhase difference sequence；ν is the wave number of light wave.
4. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that, one and half ladder half-plane phase reflection mirrors (5) and another half ladder half-plane phase reflection mirror (6) is each
Flatness≤λ/20 of a ladder unit and plane domain, surface roughness≤3nm.
5. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that；The visual field array of four imaging lens passages of the four-way imaging lens (3) and two and half ladder half-plane phases
It is the tangent structure that connects of four-way between the corresponding aperture of position speculum, i.e. each circular imaging viewing field of four-way imaging lens divides
It is not tangent with two center lines of half ladder half-plane phase reflection mirror, at the same with the angle point phase of half ladder half-plane phase reflection mirror
It connects.
6. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that；The image space of each imaging band of the four-way imaging lens (3) isAnd four-way into
It is located at effectively regarding for effective interference region on described two half ladder half-plane phase reflection mirrors as each imaging band of mirror (3)
Field is
7. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that；Four-way imaging lens (3) use telecentric beam path in image space structure, by preceding forming as lens array (3-1), forming picture afterwards
After lens array (3-2) and diaphragm array (3-3) form, and preceding composition is located at as each micro- imaging mirror unit of lens array (3-1)
It forms on the object space focal plane as the corresponding imaging mirror unit of lens array (3-2), before each diaphragm unit of diaphragm array (3-3) is located at
Before forming each imaging mirror unit as lens array, and polarizer list is inlayed in each diaphragm unit of diaphragm array (3-3)
Member；The position of the diaphragm array (3-3) is the position of four-way polarizer, while is the emergent pupil position of collimating mirror (1)
It puts, realization four-way imaging lens (3) are connected with collimating mirror (1) pupil.
8. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that；The linear polarizer array or linear polarizer and ripple that four-way polarizer (2) has different polarization direction for four
The combining structure of piece.
9. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that, relay imaging mirror (6) use object space telecentric beam path structure, and with the cold screen diaphragm (8- of planar array detector (8)
2) match, the matching of numerical aperture is met between relay imaging mirror (6) and four-way imaging lens (3).
10. the infrared polarization inteference imaging spectrometer according to claim 1 based on half ladder half-plane phase reflection mirror,
It is characterized in that, the image-side numerical aperture of four-way imaging lens (3) is set as NA1, the object-side numerical aperture of relay imaging mirror (6)
For NA2, then the matching of numerical aperture should meet relation NA2=NA1。
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