CN108099034A - For the cutter and wafer cutting process of wafer cutting - Google Patents
For the cutter and wafer cutting process of wafer cutting Download PDFInfo
- Publication number
- CN108099034A CN108099034A CN201711351737.8A CN201711351737A CN108099034A CN 108099034 A CN108099034 A CN 108099034A CN 201711351737 A CN201711351737 A CN 201711351737A CN 108099034 A CN108099034 A CN 108099034A
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- Prior art keywords
- wafer
- cutterhead
- outer circumferential
- cutter
- circumferential surface
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
Abstract
It is a kind of to include for the cutter and wafer cutting process, the cutter of wafer cutting：Cutter shaft and cutterhead, cutterhead are fixedly installed on one end of cutter shaft, and cutter shaft is located on the central axis of cutterhead, rotate to cut wafer suitable for driving cutterhead；Cutterhead has the first surface for setting cutter shaft, second surface and outer circumferential surface backwards to cutter shaft, the vertical second surface of outer circumferential surface；The cutterhead also has between the outer circumferential surface and second surface and around the curved surface of the cutter shaft, and the axial both ends of the curved surface connect the outer circumferential surface and second surface respectively；Angle β between angle α and the second surface between the curved surface and the outer circumferential surface meets：90 ° of ＜ α≤180 °, 90 ° of ＜ β≤180 °.So as to improve wedge angle existing between outer circumferential surface, second surface, wedge angle is made to become round and smooth.During cutter cuts wafer, the stress concentration of sharp angular position can be reduced, reduce the risk that wafer is cracked, ruptured.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of for the cutter of wafer cutting and wafer cutting
Method.
Background technology
In technical field of manufacturing semiconductors, it is sometimes desirable to make wafer have very thin thickness, such as 50 microns even more
It is small.At this time, it may be necessary to be ground to wafer, it is thinned with the thickness to wafer.During the manufacturing, stress leads to wafer
The marginal position of wafer often is concentrated on, if being directly ground to wafer, can be ruptured at crystal round fringes position, cause to produce
Product are bad.
In the prior art, for wafer is avoided to be ruptured at its marginal position, before being ground to wafer, usually
The front of wafer is cut using cutter, to cut off positioned at the marginal portion of wafer frontside stress concentration, then again to crystalline substance
The round back side is ground, to reduce the risk that crystal round fringes position ruptures.But utilize cutter pair of the prior art
The process that wafer is cut inherently may be such that wafer is ruptured in its marginal position, cause product bad.
The content of the invention
The present invention solves the problems, such as it is that the process cut using the cutter of the prior art the edge of wafer may make
Wafer is ruptured in its marginal position, causes product bad.
To solve the above problems, the present invention provides a kind of cutter for wafer cutting, including：Cutter shaft and cutterhead, it is described
Cutterhead is fixedly installed on one end of the cutter shaft, and the cutter shaft is located at the central axis of the cutterhead, suitable for driving the cutterhead
It rotates to cut wafer；The cutterhead, which has, sets the first surface of the cutter shaft, backwards to the second surface of the cutter shaft and outer
Circumferential surface, the vertical second surface of the outer circumferential surface；The cutterhead also have between the outer circumferential surface and second surface and
Around the curved surface of the cutter shaft, the axial both ends of the curved surface connect the outer circumferential surface and second surface respectively；The curved surface with
Angle β between angle α and the second surface between the outer circumferential surface meets：90 ° of ＜ α≤180 °, 90 ° of ＜ β≤
180°。
Optionally, the curved surface and the outer circumferential surface are tangent；And/or the curved surface and the second surface it is tangent.
Optionally, the shaft section of the curved surface and cutterhead is crossed to form curved section or straightway or broken line.
Optionally, the curved section is circular arc, and the radian of the circular arc is between 60 ° -90 °.
Optionally, the curved surface is the annular surface around the cutter shaft；Or, the curved surface is multiple, multiple songs
Face is distributed around the cutter shaft.
Optionally, the extended distance of the curved surface in the axial direction be equal to the extension of the curved surface in radial directions away from
From.
Optionally, the cutterhead uses Steel material, and at least described outer circumferential surface, the curved surface and second surface plating are equipped with
Diamond coatings.
In order to solve the above technical problems, the technical program also provides a kind of wafer cutting process, including：Turntable and crystalline substance are provided
The wafer is fixedly installed on the turntable by circle, and the wafer has the bevel to be cut backwards to the turntable；Offer more than institute
The cutter stated according to the cutting width of the wafer, cutting depth, adjusts the position of cutter, is bonded the outer circumferential surface and squeezes
Press the bevel to be cut；The turntable rotation is controlled to drive the wafer rotation, the cutter shaft rotation is controlled to drive the cutterhead
Rotation cuts the wafer to realize.
Optionally, the curved surface is being less than the cutting width of the wafer along the extended distance on cutterhead axial direction；With/
Or, the curved surface is being less than the cutting depth of the wafer along the extended distance of cutterhead in the radial direction.
Optionally, the curved surface is along full between cutterhead extended distance L2 in the radial direction and the cutting depth A2 of wafer
Foot：0.1×A2≤L2≤0.9×A2.
Optionally, the curved surface is being the one of the cutting depth of the wafer along the extended distance of cutterhead in the radial direction
Half.
Compared with prior art, technical scheme has the following advantages：
The cutter for wafer cutting, including cutter shaft and cutterhead, cutterhead has the first table for setting cutter shaft
Face, second surface and outer circumferential surface backwards to cutter shaft.By setting the curved surface around cutter shaft between outer circumferential surface and second surface, and
Meet the angle β between the angle α between curved surface and outer circumferential surface, curved surface and second surface：90 ° of ＜ α≤180 °, 90 ° of ＜ β≤
180°.So as to improving between outer circumferential surface, second surface existing wedge angle, make wedge angle no longer sharp, and become round and smooth.
During being cut using cutter wafer, the stress collection of sharp angular position can be prevented or reduced to a certain extent
In, reduce the risk that wafer is cracked, ruptured.
Further, the shaft section of the curved surface and cutterhead is crossed to form curved section, makes curved section for circular arc, and makes circular arc
Radian be 90 °.So that any one position of curved surface is not in wedge angle；Also, since outer circumferential surface is perpendicular to
Two surfaces so that curved surface can distinguish tangent, curved surface and outer circumferential surface, the link position of second surface with outer circumferential surface, second surface
Place is equally not in wedge angle.So as to further avoid occurring stress concentration in working angles, cause showing for wafer rupture
As occurring.
The wafer cutting process according to the cutting width of wafer, cutting depth, selects suitable cutter：Make cutter
Annular surface be less than the cutting width of wafer along the extended distance on cutterhead axial direction, make annular surface along cutterhead footpath
Extended distance on direction is less than the cutting depth of wafer.So that cutter can largely remove bevel to be cut and answer
The marginal portion that power is concentrated, does not have excessive residual edge and stays in wafer, avoid in grinding process, residual edge part hair
Raw rupture.
Description of the drawings
Fig. 1 is three-dimensional structure diagram of the specific embodiment of the invention for the cutter of wafer cutting；
Fig. 2 is structure diagram of the cutter shown in Fig. 1 on A directions；
Fig. 3 is enlarged drawing of the cutter shown in Fig. 2 in B area, to show the profile of curved surface；
Fig. 4, Fig. 5 are the outline drawing of two kinds of curved surfaces in other embodiment respectively；
Fig. 6 is schematic diagram when cutter cuts wafer shown in Fig. 1；
Fig. 7 is along the structure diagram on C directions shown in Fig. 6；
Fig. 8 is the enlarged drawing of D regions shown in Fig. 7.
Specific embodiment
During being cut using cutter the edge of wafer, the reason for wafer is caused to rupture, is：The prior art
In the cutter part that is used to cut wafer generally there is more sharp wedge angle, in working angles, wafer is in sharp angular position
Stress concentration can occur, so as to crack, wafer is caused to rupture.
It is understandable for the above objects, features and advantages of the present invention is enable to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
With reference to Fig. 1, Fig. 2, a kind of cutter 100 for wafer cutting, including cutterhead 10 and cutter shaft 20, the cutter shaft 20 is solid
Surely cutterhead 10 is connected, and positioned at the central axis of the cutterhead 10, the cutter shaft 20 can rotate that the cutterhead 10 is driven to revolve
Turn.The cutterhead 10 has outer circumferential surface 11 and first surface 12, the second surface 13 positioned at the axial both sides of outer circumferential surface 11, described
Cutter shaft 20 is fixedly installed on the first surface 12, and the outer circumferential surface 11 is perpendicular to the second surface 13.
Wherein, in use, the first surface 12 does not cut wafer cutter 100.First surface 12
Shape can arbitrarily be set, and have no effect on the use of the cutter 100.Specifically in the present embodiment, the first surface 12 is flat
Row is in the second surface 13.
With reference to Fig. 6, Fig. 7, wafer 200 has bevel 201 to be cut (front of wafer) and (back of the body of wafer of face to be ground 202
Face), the bevel 201 to be cut is suitable for setting semiconductor devices, such as circuit layer, cmos image sensor etc..It is made in wafer 200
During making, it is sometimes desirable to make wafer 200 that there is extraordinary light transmission, thus need to make wafer 200 that there is very thin thickness
Degree.At this time, it may be necessary to the face 202 to be ground is ground.
, it is necessary to which the marginal position for treating cutting face 201 is cut before treating grinding surface 202 and being ground, to go
Except the marginal portion of 201 stress concentration of bevel to be cut, so as to avoid in grinding process, stress is concentrated and causes wafer
200 rupture at its edge, cause product bad.
During being cut using the cutter 100 wafer 200, the cutter 100 is located at the wafer 200
Marginal position, the outer circumferential surface 11 of cutterhead are bonded setting with bevel 201 to be cut.By rotating cutterhead 10, rotating wafer 200,
And the squeezing action between the cutterhead 10 and wafer 200, so as to fulfill the cutting of 201 marginal position of cutting face is treated.
In the process, the region for applying active force in cutterhead 10 to wafer 200 is outer circumferential surface 11, second surface 13 and position
Part between outer circumferential surface 11, second surface 13.
With reference to Fig. 2, Fig. 3, in the present embodiment, the cutterhead 10 also have positioned at the outer circumferential surface 11 and second surface 13 it
Between annular surface 14, the axial both ends of the annular surface 14 connect outer circumferential surface 11 and second surface 13 respectively.It is also, described
Angle α between annular surface 14 and the outer circumferential surface 11 meets：90 ° of ＜ α≤180 °；The annular surface 14 and described second
Angle β between surface 13 meets：90 ° of ＜ β≤180 °.Wherein, the angle α refers to that annular surface 14 exists with outer circumferential surface 11
Angle at the two link position, the angle β refer to annular surface 14 with second surface 13 at the two link position
Angle.
Specifically, as shown in figure 3, the annular surface 14 and the shaft section of cutterhead 10 are crossed to form curved section 14a.Its
In, the shaft section refers to the plane by 10 central axis of cutterhead, and the curved section refers to one section of bending and smooth, no
The curve of interruption.
Angle α between the annular surface 14 and outer circumferential surface 11 is equivalent to：Between the curved section 14a and outer circumferential surface 11
Angle α.Angle β between the annular surface 14 and second surface 13 is equivalent to：The curved section 14a and second surface 13
Between angle β.
By make cutterhead 10 have annular surface 14, and make annular surface 14 respectively with outer circumferential surface 11, second surface 13 it
Between angle be all higher than 90 °, so as to improve between outer circumferential surface 11, second surface 13 existing wedge angle, make wedge angle no longer
Sharply, become round and smooth.Therefore, during being cut using cutter 100 wafer, can prevent to a certain extent
Or reduce the stress concentration of sharp angular position, reduce the risk that wafer is cracked, ruptured.
In the present embodiment, the curved section 14a is circular arc line, so that any one position of annular surface 14 is not
It is present with wedge angle, avoids occurring stress concentration in working angles, wafer is caused to rupture.
Further, the radian of the curved section 14a is 90 °.Since outer circumferential surface 11, second surface 13 are vertically arranged, institute
State curved section 14a can just distinguish with outer circumferential surface 11, second surface 13 it is tangent, i.e. make between curved section 14a and outer circumferential surface 11
Angle：α=180 ° make the angle between curved section 14a and second surface 13：β=180 °.That is, the annular is bent
Distinguish with the outer circumferential surface 11, second surface 13 tangent in face 14.
At this point, rounding off at the link position of annular surface 14 and outer circumferential surface 11, is not in wedge angle；Annular surface 14
Be not in wedge angle with rounding off at the link position of second surface 13.So as to further avoid going out in working angles
The phenomenon that showing stress concentration, wafer caused to rupture.
In other variations, the radian of the curved section 14a might be less that 90 °.At this point, the curved section 14a and
Wedge angle is formed at the link position of formation wedge angle at the link position of outer circumferential surface 11, the curved section 14a and second surface 13.But
It is that above-mentioned wedge angle is obtuse angle, less sharp compared to the wedge angle of the prior art, can reduce wedge angle position to a certain extent
The stress concentration at place reduces the risk that wafer is cracked, ruptured.
But the radian of curved section 14a is smaller, then can cause：It is formed at 11 link position of curved section 14a and outer circumferential surface
Wedge angle angle it is smaller, the angle of the wedge angle formed at 13 link position of curved section 14a and second surface is smaller, easier
Occur stress concentration during the cutting process, wafer is caused to rupture.
Therefore, can meet the radian measure gamma of curved section 14a：60 °≤γ≤90 °.
In addition, except making the curved section 14a for circular arc line, the curved section 14a can also be made for parabola, hyperbola
Wait smooth curves；Alternatively, being combined by circular arc line, parabola, hyperbola, straight line etc. and being formed, the technical program is not influenced
Implement.
With continued reference to Fig. 3, the distance that the curved section 14a extends on x in the axial direction is L1, is prolonged on radial direction y
The distance stretched is L2.Wherein, L1=L2.That is, the distance that the annular surface 14 extends on x in the axial direction is equal to
Extended distance on radial direction y.
Therefore, it is possible to cause the angle α between the annular surface 14 and outer circumferential surface 11, the annular surface 14 and second
Angle β between surface 13 meets：α=β.Make the acuity of wedge angle at 11 link position of annular surface 14 and outer circumferential surface, with
Annular surface 14 is suitable with the acuity of wedge angle at 13 link position of second surface, will not cause a certain position because of acuity
It is excessive and the phenomenon that there is stress concentration, wafer caused to rupture.
Meanwhile but also the cutterhead 10 is easier to be processed manufacture, reduction manufacturing cost.
In the present embodiment, the cutterhead 10 is made of Steel material, and the cutter shaft 20 is equally made of Steel material, so that
The cutterhead 10, cutter shaft 20 are respectively provided with preferable intensity, are not susceptible to deform.
In addition, during being cut using cutter 100 wafer, the outer circumferential surface 11, annular surface 14 and second
Surface 13 contacts wafer, and applies active force to wafer, is cut.Specifically, the outer circumferential surface 11, annular surface 14 and
Two surfaces 13 are plated equipped with diamond coatings, so that the outer circumferential surface 11, annular surface 14 and second surface 13 are with larger
Hardness, prevent cutting wafer during, the cutterhead 10 is worn, extend 10 service life of cutterhead.
In other variations, it can also be plated in the first surface 12 and be equipped with diamond coatings, not influence this technology side
The implementation of case.
It should be noted that between the outer circumferential surface 11, second surface 13 it is annular surface 14 in the present embodiment.
In other variations, the curved surface around cutter shaft 20 can also be set between the outer circumferential surface 11, second surface 13, wherein,
Curved surface is not circular in configuration, but is extended around cutter shaft 20, has the curved surface of certain radian.At this point, the curved surface also can
Improve wedge angle existing between outer circumferential surface 11, second surface 13, make wedge angle no longer sharp, and become round and smooth.Therefore, to crystalline substance
During circle is cut, the stress concentration of sharp angular position can be also prevented or reduced to a certain extent, reduces wafer
The risk crack, ruptured.
Specifically, multiple curved surfaces can be set on cutterhead 10, and make multiple curved surfaces uniform around cutter shaft 20
Distribution.
Reference Fig. 4 shows the design form of second of annular surface 14.At this point, the annular surface 14 and cutterhead 10
Shaft section be crossed to form straightway 14b.
Likewise, the straightway 14b forms angle α with outer circumferential surface 11, angle β is formed with second surface 13.Namely
It says, the annular surface 14 forms angle α with outer circumferential surface 11, and angle β is formed with second surface 13.α, β at this time meets：90°
180 ° of ＜ α ＜, 90 ° of 180 ° of ＜ β ＜.
Therefore, it is possible to improving the wedge angle between the outer circumferential surface 11, second surface 13 present in script, make outer circumferential surface 11,
Connection between second surface 13 becomes relatively round and smooth.It, also can be during being cut using cutter 100 wafer
Reduce sharp angular position stress concentration to a certain extent, reduce the risk that wafer is cracked, ruptured.
Wherein, the distance that the straightway 14b extends on x in the axial direction is L1, the distance extended on radial direction y
For L2.Wherein, L1=L2.That is, the distance that the annular surface 14 extends on x in the axial direction is equal in radial direction
Extended distance on y.
Therefore, it is possible to cause the angle α between the annular surface 14 and outer circumferential surface 11, the annular surface 14 and second
Angle β between surface 13 meets：α=β=135 °.Make the sharp journey of wedge angle at 11 link position of annular surface 14 and outer circumferential surface
Degree, it is suitable with the acuity of wedge angle at 13 link position of annular surface 14 and second surface, a certain position will not be caused because of point
Sharp degree is excessive and the phenomenon that there is stress concentration, wafer caused to rupture.
Reference Fig. 5 shows the design form of the third annular surface 14.At this point, the annular surface 14 and cutterhead 10
Shaft section rubber formed broken line 14c, broken line 14c include two straightway 14d.
Likewise, the broken line 14c forms angle α with outer circumferential surface 11, angle β, and two are formed with second surface 13
Included angle is formed between straightway 14d.That is, the annular surface 14 forms angle α with outer circumferential surface 11, with second surface
13 form angle β, and annular surface 14 itself forms included angle.α, β, φ at this time is satisfied by：90 ° of 180 ° of ＜ α ＜, 90 ° of ＜ β ＜
180 °, 90 ° of 180 ° of ＜ φ ＜.
Specifically, making two straightway 14d that there is identical length, and make angle α=150 °, at this point, angle β=
150 °, included angle=150 °.Make acuity of the annular surface 14 at each wedge angle link position suitable, will not cause a certain
The phenomenon that there is stress concentration, wafer is caused to rupture due to acuity is excessive in position.
Therefore, it is possible to improving the wedge angle between the outer circumferential surface 11, second surface 13 present in script, make outer circumferential surface 11,
Connection between second surface 13 becomes relatively round and smooth.It, also can be during being cut using cutter 100 wafer
Reduce sharp angular position stress concentration to a certain extent, reduce the risk that wafer is cracked, ruptured.
It should be noted that the broken line 14c of the present embodiment includes two straightway 14d.In other variations,
The broken line 14c can also include more straightway 14d.
With reference to Fig. 6 to Fig. 8, the present embodiment also provides a kind of wafer cutting process.
Wafer 200 and turntable 300 are provided, wafer 200 is fixedly installed on turntable 300, turntable 300 can rotate to drive
Wafer 200 rotates.Wherein, wafer 200 has bevel 201 to be cut and face to be ground 202, when 200 fixed placement of wafer is in turntable
When on 300, the face 202 to be ground is towards the turntable 300, and the bevel 201 to be cut is backwards to the turntable 300.
The cutter 100 is provided, cutter 100 is run to the marginal position of wafer 200, make the outer circumferential surface 11 of cutter with
The bevel to be cut 201 is bonded.
Specifically, the specific position of the cutter 100 is adjusted according to the cutting width A1 of the wafer 200, cutting depth A2
It puts：The distance between the second surface 13 of cutter and the edge of wafer 200 is made to be equal to the cutting width A1；In the outer circumferential surface
11 contact and when being bonded bevel 201 to be cut, and cutter 100 is made to continue to move towards wafer 100, to squeeze the wafer 100, makes institute
State outer circumferential surface 11 with it is not deformed when the distance between the bevel to be cut 201 of wafer 200 be equal to the cutting depth A2.
Wherein, the cutting width A1 is referred to：The radius of bevel to be cut 201 during non-margins of excision part and excision side
The difference of the radius of bevel to be cut 201 behind edge point；The cutting depth A2 is referred to：Wafer during non-margins of excision part
The difference of thickness of the wafer 200 at marginal position after 200 thickness and margins of excision part.
Finally, controlling the rotation of turntable 300 processed drives the wafer 200 to rotate, and controls the rotation of the cutter shaft 20 band moving knife
Disk 10 rotates, and in rotary course, realizes the cutting to wafer 200.
In the present embodiment, preferably wafer 200 to be avoided to rupture during the cutting process, cut to wafer 200
, it is necessary to select suitable cutter 100 before cutting.
Specifically, as shown in figure 8, make the annular surface 14 of the cutter along the extended distance on 10 axial direction of cutterhead
L1 is less than the cutting width A1 of the wafer, makes the annular surface 14 small in the extended distance L2 along cutterhead 10 in the radial direction
In the cutting depth A2 of the wafer.
At this point, the cutter 100 can largely remove marginal portion (Fig. 8 of 201 stress concentration of bevel to be cut
Shown in middle M regions).Excessive residual edge is not had and stays in wafer 200, is avoided in grinding process, residual edge part hair
Life ruptures and causes product bad.
Optionally, the annular surface 14 of the cutter is made in the extended distance L2 and wafer along cutterhead 10 in the radial direction
Meet between 200 cutting depth A2：0.5 × A2 of L2 ﹦.
Thereby it is ensured that on the premise of residual edge few enough stays in wafer 200, make annular surface 14 have compared with
Long extended distance.Ensureing the link position of outer circumferential surface 11 and second surface 13 will not be excessively sharp, can during the cutting process,
It avoids that stress concentration occurs at the link position of outer circumferential surface 11 and second surface 13, wafer 200 is caused to crack, occurs to break
It splits.
In other variations, the cutter 100 can also be so selected：Make the extended distance L1 and the cutting wide
Meet between degree A1：0.1×A1≤L1≤0.9×A1；Make to meet between the extended distance L2 and the cutting depth A2：
0.1×A2≤L2≤0.9×A2。
To a certain extent, residual edge few enough can be made to stay in wafer 200；Meanwhile reduce outer circumferential surface 11 and the
Stress concentration, the risk that wafer 200 is caused to crack, rupture occur at link position for two surfaces 13.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (11)
1. a kind of cutter for wafer cutting, including：
Cutter shaft and cutterhead, the cutterhead are fixedly installed on one end of the cutter shaft, and the cutter shaft is located at the central shaft of the cutterhead
Line, suitable for the cutterhead rotation is driven to cut wafer；
The cutterhead has the first surface for setting the cutter shaft, second surface and outer circumferential surface backwards to the cutter shaft, described outer
The vertical second surface of circumferential surface；It is characterized in that,
The cutterhead also has between the outer circumferential surface and second surface and around the curved surface of the cutter shaft, the curved surface
Axial both ends connect the outer circumferential surface and second surface respectively；
Angle β between angle α and the second surface between the curved surface and the outer circumferential surface meets：90 ° of ＜ α≤
180 °, 90 ° of ＜ β≤180 °.
2. cutter as described in claim 1, which is characterized in that the curved surface and the outer circumferential surface are tangent；And/or the song
Face and the second surface are tangent.
3. cutter as described in claim 1, which is characterized in that the shaft section of the curved surface and cutterhead be crossed to form curved section or
Straightway or broken line.
4. cutter as claimed in claim 3, which is characterized in that the curved section is circular arc, the radian of the circular arc 60 °-
Between 90 °.
5. such as claim 1-4 any one of them cutters, which is characterized in that the curved surface is the annular around the cutter shaft
Curved surface；Or, the curved surface is multiple, multiple curved surfaces are distributed around the cutter shaft.
6. such as claim 1-4 any one of them cutters, which is characterized in that the extension of the curved surface in the axial direction away from
From the extended distance equal to the curved surface in radial directions.
7. such as claim 1-4 any one of them cutters, which is characterized in that the cutterhead uses Steel material, at least described outer
Circumferential surface, the curved surface and second surface plating are equipped with diamond coatings.
8. a kind of wafer cutting process, including：
Turntable and wafer are provided, the wafer is fixedly installed on the turntable, the wafer has to be treated backwards to the turntable
Cutting face；It is characterized in that,
Claim 1-7 any one of them cutters are provided, according to the cutting width of the wafer, cutting depth, adjust cutter
Position, be bonded the outer circumferential surface and squeeze the bevel to be cut；
The turntable rotation is controlled to drive the wafer rotation, the cutter shaft rotation is controlled to drive the cutterhead rotation, to realize
Cut the wafer.
9. wafer cutting process as claimed in claim 8, which is characterized in that the curved surface is along prolonging on cutterhead axial direction
Stretch the cutting width that distance is less than the wafer；And/or the curved surface is being less than institute along the extended distance of cutterhead in the radial direction
State the cutting depth of wafer.
10. wafer cutting process as claimed in claim 9, which is characterized in that the curved surface along cutterhead in the radial direction
Meet between extended distance L2 and the cutting depth A2 of wafer：0.1×A2≤L2≤0.9×A2.
11. wafer cutting process as claimed in claim 10, which is characterized in that the curved surface along cutterhead in the radial direction
Extended distance is the half of the cutting depth of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711351737.8A CN108099034A (en) | 2017-12-15 | 2017-12-15 | For the cutter and wafer cutting process of wafer cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711351737.8A CN108099034A (en) | 2017-12-15 | 2017-12-15 | For the cutter and wafer cutting process of wafer cutting |
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| Publication Number | Publication Date |
|---|---|
| CN108099034A true CN108099034A (en) | 2018-06-01 |
Family
ID=62217431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201711351737.8A Pending CN108099034A (en) | 2017-12-15 | 2017-12-15 | For the cutter and wafer cutting process of wafer cutting |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109202593A (en) * | 2018-10-09 | 2019-01-15 | 德淮半导体有限公司 | Wafer trimmer blade |
| CN110241687A (en) * | 2019-06-13 | 2019-09-17 | 长安大学 | A kind of asphalt-spreader vibrator and tamping equipment with multi-angle transition face |
| CN111403315A (en) * | 2020-03-03 | 2020-07-10 | 上海华力集成电路制造有限公司 | Wafer trimming device and method |
| CN115534152A (en) * | 2022-11-25 | 2022-12-30 | 淄博朗斯光电有限公司 | Wafer slicing equipment and processing technology thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103582A (en) * | 2005-10-03 | 2007-04-19 | Disco Abrasive Syst Ltd | Processing method and grinding apparatus of wafer |
| CN201264317Y (en) * | 2008-09-04 | 2009-07-01 | 俞恒庆 | Cutting knife of apparatus for processing stone surface |
| US20110294403A1 (en) * | 2010-05-25 | 2011-12-01 | Denso Corporation | Wafer processing method, wafer polishing apparatus, and ingot slicing apparatus |
| CN203185509U (en) * | 2013-03-27 | 2013-09-11 | 黄泽浩 | Arc-shaped cutter for stone material slab face processing device |
| CN104097118A (en) * | 2013-04-02 | 2014-10-15 | 盛美半导体设备（上海）有限公司 | Stress-free polishing integration device |
| CN204262940U (en) * | 2014-11-13 | 2015-04-15 | 宁晋松宫电子材料有限公司 | A kind of silicon chip prosthetic appliance |
| CN104691058A (en) * | 2011-05-13 | 2015-06-10 | 日本电气硝子株式会社 | Laminate, method for cutting laminate, method for processing laminate, and device and method for cutting brittle plate-like object |
| CN105856429A (en) * | 2016-04-08 | 2016-08-17 | 桂林创源金刚石有限公司 | Method for reducing machining stress concentration of glass hole |
| JP6139325B2 (en) * | 2013-08-07 | 2017-05-31 | 株式会社ディスコ | Cutting blade wear inspection method |
-
2017
- 2017-12-15 CN CN201711351737.8A patent/CN108099034A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103582A (en) * | 2005-10-03 | 2007-04-19 | Disco Abrasive Syst Ltd | Processing method and grinding apparatus of wafer |
| CN201264317Y (en) * | 2008-09-04 | 2009-07-01 | 俞恒庆 | Cutting knife of apparatus for processing stone surface |
| US20110294403A1 (en) * | 2010-05-25 | 2011-12-01 | Denso Corporation | Wafer processing method, wafer polishing apparatus, and ingot slicing apparatus |
| CN104691058A (en) * | 2011-05-13 | 2015-06-10 | 日本电气硝子株式会社 | Laminate, method for cutting laminate, method for processing laminate, and device and method for cutting brittle plate-like object |
| CN203185509U (en) * | 2013-03-27 | 2013-09-11 | 黄泽浩 | Arc-shaped cutter for stone material slab face processing device |
| CN104097118A (en) * | 2013-04-02 | 2014-10-15 | 盛美半导体设备（上海）有限公司 | Stress-free polishing integration device |
| JP6139325B2 (en) * | 2013-08-07 | 2017-05-31 | 株式会社ディスコ | Cutting blade wear inspection method |
| CN204262940U (en) * | 2014-11-13 | 2015-04-15 | 宁晋松宫电子材料有限公司 | A kind of silicon chip prosthetic appliance |
| CN105856429A (en) * | 2016-04-08 | 2016-08-17 | 桂林创源金刚石有限公司 | Method for reducing machining stress concentration of glass hole |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109202593A (en) * | 2018-10-09 | 2019-01-15 | 德淮半导体有限公司 | Wafer trimmer blade |
| CN110241687A (en) * | 2019-06-13 | 2019-09-17 | 长安大学 | A kind of asphalt-spreader vibrator and tamping equipment with multi-angle transition face |
| CN111403315A (en) * | 2020-03-03 | 2020-07-10 | 上海华力集成电路制造有限公司 | Wafer trimming device and method |
| CN111403315B (en) * | 2020-03-03 | 2022-03-18 | 上海华力集成电路制造有限公司 | Wafer trimming device and method |
| CN115534152A (en) * | 2022-11-25 | 2022-12-30 | 淄博朗斯光电有限公司 | Wafer slicing equipment and processing technology thereof |
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