CN108091729A - A kind of production method of solar cell and the implementation method of point contact - Google Patents
A kind of production method of solar cell and the implementation method of point contact Download PDFInfo
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- CN108091729A CN108091729A CN201711396358.0A CN201711396358A CN108091729A CN 108091729 A CN108091729 A CN 108091729A CN 201711396358 A CN201711396358 A CN 201711396358A CN 108091729 A CN108091729 A CN 108091729A
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- hole
- point contact
- implementation method
- passivating film
- solar cell
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000002002 slurry Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 12
- 210000004027 cell Anatomy 0.000 description 27
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000003283 Pachira macrocarpa Nutrition 0.000 description 1
- 240000001085 Trapa natans Species 0.000 description 1
- 235000014364 Trapa natans Nutrition 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 235000009165 saligot Nutrition 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
This application discloses a kind of production method of solar cell and the implementation method of point contact, wherein, the implementation method of the point contact is included in the surface making diffusion layer and passivating film of silicon substrate；The passivating film is opened up out to dotted through hole, the through hole is corresponding with the position of emitter and/or back of the body electric field；Non- burn-through type slurry is printed in the through hole, dry and is sintered the non-burn-through type slurry.The production method of above-mentioned solar cell and the implementation method of point contact, since slurry does not burn the passivating film, only outputing the dotted region of through hole in advance can just be in contact with silicon substrate, therefore metallic region and the contact area of silicon substrate can be reduced, so as to reduce the compound of metallic region, the open-circuit voltage of solar cell is promoted, so as to promote the transfer efficiency of solar cell.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology field, production method and point more particularly to a kind of solar cell
The implementation method of contact.
Background technology
With the quick development of photovoltaic industry, efficiency of solar cell, which promotes speed, becomes slower and slower, before main next
Coming from the battery efficiency gain that Si wafer quality is promoted and slurry optimization is brought becomes less and less, nowadays limits efficiency of solar cell
The principal element of promotion comes from the compound of metal area.Present PERC (Passivated Emitter and Rear Cell) electricity
Pond obtains fast development by feat of compared to conventional batteries (BSF) higher efficiency, and PERC batteries are able to fast lifting
Thinking is still to reduce the size of metallic region area, and the conventional batteries back side is entirely Metal contact regions, which answers
Conjunction is very serious, but PERC cell backsides, by the way of the contact of local metal, metallic region area only accounts for the back side gross area
Less than 10%, nonmetallic contact area is by good passivation, therefore total compound in the back side has obtained greatly compared to conventional batteries
Width declines, and the open-circuit voltage and transfer efficiency of PERC batteries are also so as to significantly being promoted.But PERC battery front side metals connect
It is still the scheme contacted using line to touch, and so further includes N-type double-side cell, IBC electricity using the solar cell of line contact scheme
The almost all of solar cell such as pond, and the compound of line contact area is limitation solar cell open-circuit voltage and battery now
Where the main bottleneck that efficiency is further promoted.
The compound reduction of metal area mainly realizes that the first is exactly the continuous progress of metal paste by two ways,
Bottleneck period is come into now；Another be exactly it is continuous reduce metallization area, but according to existing technical solution, just
The back side is still very big using the pattern metal area of grid line formula.
The content of the invention
To solve the above problems, the present invention provides a kind of production method of solar cell and the realization sides of point contact
Method, since slurry does not burn the passivating film, only outputing the dotted region of through hole in advance can just be in contact with silicon substrate, therefore
Metallic region and the contact area of silicon substrate can be reduced, so as to reduce the compound of metallic region, promotes opening for solar cell
Road voltage, so as to promote the transfer efficiency of solar cell.
A kind of implementation method of point contact provided by the invention, including：
Diffusion layer and passivating film are made on the surface of silicon substrate；
The passivating film is opened up out to dotted through hole, the through hole is corresponding with the position of emitter and/or back of the body electric field；
Non- burn-through type slurry is printed in the through hole, dry and is sintered the non-burn-through type slurry.
Preferably, in the implementation method of above-mentioned point contact, the shape by the through hole is circular, square or water chestnut
Shape.
Preferably, it is described the passivating film is opened up out to dotted through hole to be in the implementation method of above-mentioned point contact：
The passivating film is opened up out to dotted through hole using laser, photoetching or slurry etching mode.
Preferably, in the implementation method of above-mentioned point contact, the mode using laser opens up out the passivating film
Dotted through hole is：
Using the laser that frequency is 20KHz to 40KHz, power is 20W to 40W, speed is 10m/s to 50m/s by described in
Passivating film opens up out dotted through hole.
Preferably, it is described non-burn-through type slurry is printed in the through hole to be in the implementation method of above-mentioned point contact：
Using the silk screen that spacing is 1100 μm to 1400 μm under the pressure of 55N to 65N, in the through hole described in printing
Non- burn-through type slurry.
Preferably, it is described to make diffusion layer and passivating film on the surface of silicon substrate in the implementation method of above-mentioned point contact
For：
Diffusion layer and passivating film are made in the front and back of the silicon substrate.
The production method of a kind of solar cell provided by the invention, using such as any one of them method system above
Make point contact.
By foregoing description, the production method of above-mentioned solar cell provided by the invention and the realization side of point contact
Method, since the surface that the implementation method of the point contact is included in silicon substrate makes diffusion layer and passivating film；The passivating film is opened
Dotted through hole is set out, the through hole is corresponding with the position of emitter and/or back of the body electric field；Non- burn-through is printed in the through hole
Type slurry dries and is sintered the non-burn-through type slurry, since slurry does not burn the passivating film, only outputs through hole in advance
Dotted region can just be in contact with silicon substrate, therefore can reduce metallic region and the contact area of silicon substrate, so as to reduce gold
Belong to the compound of region, the open-circuit voltage of solar cell is promoted, so as to promote the transfer efficiency of solar cell.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of the implementation method of the first point contact provided by the embodiments of the present application；
Fig. 2 is the front schematic view of solar cell provided by the embodiments of the present application；
Fig. 3 is the schematic cross-section of non-burn-through type slurry along its length.
Specific embodiment
The core concept of the present invention is to provide a kind of production method of solar cell and the implementation method of point contact, energy
Metallic region and the contact area of silicon substrate are enough reduced, so as to reduce the compound of metallic region, promotes the open circuit of solar cell
Voltage, so as to promote the transfer efficiency of solar cell.
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
The implementation method of the first point contact provided by the embodiments of the present application is as shown in Figure 1, Fig. 1 carries for the embodiment of the present application
The schematic diagram of the implementation method of the first point contact supplied, this method comprises the following steps：
S1：Diffusion layer and passivating film are made on the surface of silicon substrate；
It should be noted that surface mentioned here can be front, it can be the back side, can also be front and back,
It is not intended to limit, by taking Fig. 2 and Fig. 3 as an example, the situation for only realizing point contact in front is illustrated herein, wherein, Fig. 2 is this Shen
Please the front schematic view of solar cell that provides of embodiment, including in the front of solar cell body 1 with dotted line circle
The schematic diagram of non-burn-through type slurry out, and Fig. 3 is the schematic cross-section of non-burn-through type slurry along its length, it is seen that this
The lower part of the non-burn-through type slurry 203 of kind is passivation film 202 and diffusion layer 201.
S2：The passivating film is opened up out to dotted through hole, the through hole is opposite with the position of emitter and/or back of the body electric field
It should；
Illustrate that through hole described here, which is meant that, penetrates passivation film 202, and does not penetrate continuing with Fig. 2 and Fig. 3
Diffusion layer 201, here focus on having abandoned existing linear structure, but using dots structure, these through holes are respectively positioned on
On one rule straight line, on the whole similar to a rule dotted line, and the shape and size of the through hole used here are not intended to limit, can be with
Corresponding shape and size are selected according to actual demand, and are in emitter accordingly when opening up through hole in front
Position opens up through hole, is to open up through hole in the position of back of the body electric field accordingly when overleaf opening up through hole, and works as on two sides simultaneously
When opening up through hole, with regard to it is corresponding while emitter and carry on the back electric field position all open up through hole.
S3：Non- burn-through type slurry is printed in the through hole, dry and is sintered the non-burn-through type slurry.
It should be noted that as shown in figure 3, the generally linear of this non-burn-through type slurry 203 of printing, but only
There is the diffusion layer 201 that can be just connected in the position of the through hole slurry on silicon substrate, and contact is there will be no at other positions,
So as to reduce the compound of metallic region.
By foregoing description, the implementation method of the first point contact provided by the embodiments of the present application, due to being included in
The surface of silicon substrate makes diffusion layer and passivating film；The passivating film is opened up out to dotted through hole, the through hole and emitter
And/or the position of back of the body electric field is corresponding；Non- burn-through type slurry is printed in the through hole, dry and is sintered the non-burn-through type slurry
Material, since slurry does not burn the passivating film, only outputing the dotted region of through hole in advance can just be in contact with silicon substrate, therefore
Metallic region and the contact area of silicon substrate can be reduced, so as to reduce the compound of metallic region, promotes opening for solar cell
Road voltage, so as to promote the transfer efficiency of solar cell.
The implementation method of second of point contact provided by the embodiments of the present application is in the realization side of the first above-mentioned point contact
On the basis of method, following technical characteristic is further included：
The shape by the through hole is circular, square or diamond shape.
It should be noted that these shapes are also only a part of preferred embodiment, it actually can also be according to actual needs
Corresponding shape of through holes is selected, can also be subsection line.
The implementation method of the third point contact provided by the embodiments of the present application is in the realization side of the first above-mentioned point contact
On the basis of method, following technical characteristic is further included：
It is described the passivating film is opened up out to dotted through hole to be：
The passivating film is opened up out to dotted through hole using laser, photoetching or slurry etching mode.
Through hole can be more accurately made using these three modes, but production method is not limited to that three kinds of methods,
Other modes can also be selected to make through hole according to actual needs.
The implementation method of 4th kind of point contact provided by the embodiments of the present application, is in the realization side of the third above-mentioned point contact
On the basis of method, following technical characteristic is further included：
The passivating film is opened up out dotted through hole by the mode using laser：
Using the laser that frequency is 20KHz to 40KHz, power is 20W to 40W, speed is 10m/s to 50m/s by described in
Passivating film opens up out dotted through hole.
The implementation method of 5th kind of point contact provided by the embodiments of the present application, be it is above-mentioned the first to the 4th kind of point contact
Implementation method in it is any on the basis of, further include following technical characteristic：
It is described non-burn-through type slurry is printed in the through hole to be：
Using the silk screen that spacing is 1100 μm to 1400 μm under the pressure of 55N to 65N, in the through hole described in printing
Non- burn-through type slurry.
The speed of this silk-screen printing can in 180mm/s to 200m/s, scraper be highly arranged on 650 microns to 1000 it is micro-
Between rice, the non-burn-through type slurry so printed out is more secured.
The implementation method of 6th kind of point contact provided by the embodiments of the present application is in the realization side of above-mentioned 5th kind of point contact
On the basis of method, following technical characteristic is further included：
It is described to be in the surface of silicon substrate making diffusion layer and passivating film：
Diffusion layer and passivating film are made in the front and back of the silicon substrate.
In this case, it becomes possible to while reduce compound between the metallic region of front and back and silicon substrate, it reaches
To the better effect for promoting battery conversion efficiency.
The production method of a kind of solar cell provided by the embodiments of the present application, using such as any one of them above
Method makes point contact.
This production method due to make use of the above method make point contact, avoid line contact in the case of metallic region with
The problem of silicon substrate contact area is excessive, therefore metallic region and the contact area of silicon substrate can be reduced, so as to reduce metal
Region it is compound, the open-circuit voltage of solar cell is promoted, so as to promote the transfer efficiency of solar cell.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (7)
1. a kind of implementation method of point contact, which is characterized in that including：
Diffusion layer and passivating film are made on the surface of silicon substrate；
The passivating film is opened up out to dotted through hole, the through hole is corresponding with the position of emitter and/or back of the body electric field；
Non- burn-through type slurry is printed in the through hole, dry and is sintered the non-burn-through type slurry.
2. the implementation method of point contact according to claim 1, which is characterized in that the shape by the through hole is circle
Shape, square or diamond shape.
3. the implementation method of point contact according to claim 1, which is characterized in that described that the passivating film is opened up into out point
The through hole of shape is：
The passivating film is opened up out to dotted through hole using laser, photoetching or slurry etching mode.
4. the implementation method of point contact according to claim 3, which is characterized in that the mode using laser is by described in
Passivating film opens up out dotted through hole：
Using the laser that frequency is 20KHz to 40KHz, power is 20W to 40W, speed is 10m/s to 50m/s by the passivation
Film opens up out dotted through hole.
5. according to the implementation method of claim 1-4 any one of them point contacts, which is characterized in that described in the through hole
Printing non-burn-through type slurry is：
Using the silk screen that spacing is 1100 μm to 1400 μm under the pressure of 55N to 65N, the non-burning is printed in the through hole
Wear type slurry.
6. the implementation method of point contact according to claim 5, which is characterized in that described made on the surface of silicon substrate is expanded
It dissipates layer and passivating film is：
Diffusion layer and passivating film are made in the front and back of the silicon substrate.
7. a kind of production method of solar cell, which is characterized in that using such as claim 1-6 any one of them sides
Legal system makees point contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711396358.0A CN108091729A (en) | 2017-12-21 | 2017-12-21 | A kind of production method of solar cell and the implementation method of point contact |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711396358.0A CN108091729A (en) | 2017-12-21 | 2017-12-21 | A kind of production method of solar cell and the implementation method of point contact |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108091729A true CN108091729A (en) | 2018-05-29 |
Family
ID=62178279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711396358.0A Pending CN108091729A (en) | 2017-12-21 | 2017-12-21 | A kind of production method of solar cell and the implementation method of point contact |
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| Country | Link |
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| CN (1) | CN108091729A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966761A (en) * | 2015-07-08 | 2015-10-07 | 四川银河星源科技有限公司 | Manufacturing method of crystalline silicon solar cell |
| CN205970348U (en) * | 2016-08-26 | 2017-02-22 | 奥特斯维能源（太仓）有限公司 | Solar cell prints half tone with vein form grid line |
-
2017
- 2017-12-21 CN CN201711396358.0A patent/CN108091729A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966761A (en) * | 2015-07-08 | 2015-10-07 | 四川银河星源科技有限公司 | Manufacturing method of crystalline silicon solar cell |
| CN205970348U (en) * | 2016-08-26 | 2017-02-22 | 奥特斯维能源（太仓）有限公司 | Solar cell prints half tone with vein form grid line |
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Application publication date: 20180529 |
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