CN108091646B - Packaging structure of ultraviolet LED antistatic silicon substrate - Google Patents
Packaging structure of ultraviolet LED antistatic silicon substrate Download PDFInfo
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- CN108091646B CN108091646B CN201711453233.7A CN201711453233A CN108091646B CN 108091646 B CN108091646 B CN 108091646B CN 201711453233 A CN201711453233 A CN 201711453233A CN 108091646 B CN108091646 B CN 108091646B
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- silicon substrate
- ultraviolet led
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- tube shell
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 68
- 239000010703 silicon Substances 0.000 title claims abstract description 68
- 238000004806 packaging method and process Methods 0.000 title claims description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 238000005538 encapsulation Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000013461 design Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 5
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001295 No alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
An encapsulation structure of an ultraviolet LED antistatic silicon substrate comprises: the silicon substrate is separated into a positive electrode, a negative electrode and a free electrode by using a spacing groove, the positive electrode is positioned on one side of the upper surface of the silicon substrate, and the negative electrode and the free electrode are positioned on the other side of the upper surface of the silicon substrate; a voltage regulator diode fabricated on the silicon substrate of the anode portion; the ultraviolet LED chip is inversely arranged on the silicon substrate and is connected with the anode, the cathode and the free electrode; the silicon substrate is manufactured on the ceramic tube shell, the positive electrode of the substrate is connected with the positive electrode of the ceramic tube shell, and the negative electrode of the silicon substrate is connected with the negative electrode of the ceramic tube shell; a cover plate which covers the ceramic tube shell. The invention can improve the self antistatic ability, effectively protect the ultraviolet LED, simplify the structure and reduce the cost.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging, and particularly relates to a packaging structure of an ultraviolet LED antistatic silicon substrate.
Background
At present, a sapphire-based epitaxial wafer is adopted for an ultraviolet LED, and sapphire is not easy to dissipate heat, so that in order to facilitate heat dissipation and improve efficiency, an ultraviolet chip is generally inverted on a silicon substrate during packaging, the silicon substrate with the ultraviolet chip is normally arranged in a ceramic tube shell, and a positive electrode and a negative electrode are LED out to electrodes corresponding to the shell in a gold wire pressure welding mode.
When the LED is turned off, power is down or external static electricity influences in working, reverse voltage is generated instantly, and after the generated voltage exceeds a chip bearing index, a certain area between two electrode layers is discharged instantly (nS), so that electric leakage is generated or the chip is burnt. People connect a Zener diode chip in parallel at two ends of the LED chip in reverse direction, so as to realize the purpose of antistatic protection for the LED chip.
The mode of the reverse parallel connection of the Zener tubes is that the silicon substrate is normally installed, meanwhile, the vacant position of the shell is coated with epoxy resin to bond the Zener tubes, and after high-temperature curing, gold wire pressure welding reversely sounds and is connected to the two poles of the LED in parallel. The method needs enough space of the shell, has complex operation, needs two times of normal mounting operation, and is not beneficial to heat dissipation of the LED chip. Therefore, the design of the silicon substrate with the bearing function and the protection function has important practical application significance for simplifying operation and improving heat dissipation performance.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a packaging structure of an ultraviolet LED antistatic silicon substrate, which can improve the antistatic capability of the packaging structure, effectively protect the ultraviolet LED, simplify the structure, and reduce the cost.
In order to achieve the above object, the present invention provides a packaging structure of an antistatic silicon substrate for an ultraviolet LED, comprising:
the silicon substrate is separated into a positive electrode, a negative electrode and a free electrode by using a spacing groove, the positive electrode is positioned on one side of the upper surface of the silicon substrate, and the negative electrode and the free electrode are positioned on the other side of the upper surface of the silicon substrate;
a voltage regulator diode fabricated on the silicon substrate of the anode portion;
the ultraviolet LED chip is inversely arranged on the silicon substrate and is connected with the anode, the cathode and the free electrode;
the silicon substrate is manufactured on the ceramic tube shell, the positive electrode of the substrate is connected with the positive electrode of the ceramic tube shell, and the negative electrode of the silicon substrate is connected with the negative electrode of the ceramic tube shell;
a cover plate which covers the ceramic tube shell.
The invention has the advantages of improving the self antistatic ability, effectively protecting the ultraviolet LED, simplifying the structure and reducing the cost.
Drawings
For further illustration of the technical content of the invention, the invention is further illustrated by the following figures and examples, wherein:
FIG. 1 is a schematic view of an antistatic silicon substrate structure;
FIG. 2 is a schematic structural diagram of a flip UV LED chip;
fig. 3 is a schematic structural diagram of a silicon substrate provided with ultraviolet LED chips packaged on a ceramic substrate.
Detailed Description
Referring to fig. 1, fig. 2 and fig. 3, the present invention provides a package structure of an ultraviolet LED antistatic substrate, including:
a zener diode 5 fabricated on a silicon substrate 6 (as shown in fig. 1) of the anode 1 portion, wherein the silicon substrate 6 and the zener diode 5 are connected in reverse parallel;
a silicon substrate 6, the silicon substrate 6 is separated by a spacing groove 4 to form a positive electrode 1, a negative electrode 2 and a free electrode 3, the positive electrode 1 is positioned on one side of the upper surface of the silicon substrate 6, and the negative electrode 2 and the free electrode 3 are positioned on the other side of the upper surface of the silicon substrate 6;
the current flow of the zener diode is completed first. The simple process is one oxidation → photolithography implantation → corrosion → thin oxygen → NW exposure → P implantation → photoresist removal → phosphorus annealing → boron implantation → SIN deposition → SiO2CVD → floating hole → PPL exposure etching SiO2→ B injection → silicon nitride etching → annealing → CON photoetching → corrosion → ZrTiAl evaporation → metal exposure → etching → PCM test, wherein the key process comprises two points: annealing at 1100 deg.c to activate impurity and form shallow junction, and ZrTiAl to thickness
Zr aims to avoid forming too deep Al-Si mutual solubility and prevent P + shallow junction damage, and no alloy process is used after metal, and the problem that the P + shallow junction is damaged due to the mutual solubility of A1 and Si is avoided, which is opposite to the necessary alloy of the conventional diode;
the electrodes corresponding to the silicon substrate are prepared on the silicon wafer by using 8020 gold-tin alloy. The reason why the gold-tin alloy is used for the electrode is that 8020 gold-tin alloy has a low melting point and can form a molten state at about 280 ℃. The silicon substrate 6 is prepared by cleaning → steaming SiO on the surface after the voltage regulator diode 5 is partially completed2→ photoetching → stripping of photoresist → evaporation of the guide layer (the thickness of the guide layer is generally within
Nickel-gold alloy) → evaporating 8020 gold-tin alloy of 2-5 μm → peeling.
The ultraviolet LED chip 7 is inversely arranged on the silicon substrate 6 and is connected with the anode 1, the cathode 2 and the free electrode 3 to form the silicon substrate (shown in figure 2), the silicon substrate 6 and the voltage stabilizing diode 5 are integrated on the silicon substrate 6 through layout design and process processing, and the ultraviolet LED chip 7 is supported and protected;
the ultraviolet LED chip 7 is flip-chip mounted on the silicon substrate 6 by eutectic bonding. The specific mode is as follows: after the temperature of the workbench of the eutectic machine rises to 290 ℃, the silicon substrate 6 is adsorbed and fixed through the vacuum holes, the ultraviolet LED chip 7 is adsorbed and fixed through the vacuum suction nozzle by the eutectic machine, the ultraviolet LED chip 7 is welded on the silicon substrate under the action of pressure and ultrasound after contacting the silicon substrate 6, and finally, the ultraviolet LED chip is cooled and solidified. In the whole operation process, the temperature of the workbench is high, nitrogen is blown to the surface for protection, and gold-tin alloy on the surface of the silicon substrate is prevented from being oxidized;
the free electrode 3 on the silicon substrate 6 is designed at any position of the anode 1 and the cathode 2, is suitable for various ultraviolet LED flip structures, and is determined according to the polarity of a flip ultraviolet LED chip 7;
generally, the ultraviolet LED chip 7 has different layout designs, the positions of the anode 2 and the cathode 1 and the patterns have different forms, and when flip chip bonding is carried out, the free electrode 3 is welded with the ultraviolet LED chip 7, so that the free electrode 3 shows the corresponding polarity;
the substrate is manufactured on the ceramic tube shell 9, the ceramic tube shell 9 is a square body or a round body with a surrounding dam, the anode of the substrate is connected with the anode of the ceramic tube shell 9, the cathode of the silicon substrate is connected with the cathode of the ceramic tube shell 9 (as shown in figure 3), and after the silicon substrate is assembled on the ceramic tube shell 9, the silicon substrate is assembled on the electrode of the corresponding ceramic tube shell 9 from the free electrode 3, so that the electrical property of the LED is better realized;
uniformly coating conductive silver paste on an electrode on a substrate of a ceramic tube shell 9 according to the size of a silicon substrate, bonding the inverted silicon substrate 6, heating the conductive silver paste to 130 ℃ in a drying oven, curing for 30 minutes under the protection of nitrogen, heating a worktable of a gold wire pressure welding instrument to 150 ℃, connecting the corresponding electrode of the silicon substrate 6 and the electrode of the ceramic tube shell 9 by using a pressure welding gold wire, and finally sealing a cover plate 8, wherein the cover plate 8 is a quartz plate.
It should be noted that the present invention is not limited to the above examples, and that several modifications and improvements can be made without departing from the concept and principle of the invention, and these modifications and improvements are considered to be within the scope of the invention.
Claims (5)
1. An encapsulation structure of an ultraviolet LED antistatic silicon substrate comprises:
the silicon substrate is separated into a positive electrode, a negative electrode and a free electrode by using a spacing groove, the positive electrode is positioned on one side of the upper surface of the silicon substrate, and the negative electrode and the free electrode are positioned on the other side of the upper surface of the silicon substrate;
a voltage regulator diode fabricated on the silicon substrate of the anode portion;
the ultraviolet LED chip is inversely arranged on the silicon substrate and is connected with the anode, the cathode and the free electrode;
the silicon substrate is manufactured on the ceramic tube shell, the positive electrode of the substrate is connected with the positive electrode of the ceramic tube shell, and the negative electrode of the silicon substrate is connected with the negative electrode of the ceramic tube shell;
a cover plate which is covered on the ceramic tube shell;
the free pole on the silicon substrate is designed at any position of the anode and the cathode and is suitable for various ultraviolet LED flip structures, and the free pole is determined according to the polarity of a flip ultraviolet LED chip; wherein the silicon substrate and the zener diode are connected in reverse parallel internally.
2. The packaging structure of the ultraviolet LED antistatic silicon substrate as set forth in claim 1, wherein the silicon substrate and the zener diode are integrated on the silicon substrate by layout design and process, and simultaneously play a role of supporting and protecting the ultraviolet LED chip.
3. The package structure of an antistatic silicon substrate for UV LED as claimed in claim 1, wherein after the silicon substrate with the UV LED chip flip-chip mounted thereon is mounted on the ceramic package, the bonding wires are extended from the free electrode to the corresponding electrodes of the ceramic package, thereby achieving better electrical performance of the LED.
4. The packaging structure of ultraviolet LED antistatic silicon substrate according to claim 1, wherein the ceramic package is a square with a dam or a circular gold-plated ceramic body.
5. The packaging structure for an ultraviolet LED antistatic silicon substrate as set forth in claim 1, wherein the cover sheet is a quartz sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711453233.7A CN108091646B (en) | 2017-12-27 | 2017-12-27 | Packaging structure of ultraviolet LED antistatic silicon substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711453233.7A CN108091646B (en) | 2017-12-27 | 2017-12-27 | Packaging structure of ultraviolet LED antistatic silicon substrate |
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| Publication Number | Publication Date |
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| CN108091646A CN108091646A (en) | 2018-05-29 |
| CN108091646B true CN108091646B (en) | 2020-04-21 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108899406A (en) * | 2018-07-02 | 2018-11-27 | 江西科技师范大学 | A kind of highly reliable large power ultraviolet LED integrated encapsulation method |
| CN111463334A (en) * | 2020-04-16 | 2020-07-28 | 中国科学院半导体研究所 | Ceramic substrate and packaging method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731592A (en) * | 2005-08-26 | 2006-02-08 | 杭州士兰明芯科技有限公司 | Flip-chip bonded structure light-emitting diode and its manufacture method |
| CN1780002A (en) * | 2004-11-19 | 2006-05-31 | 中国科学院半导体研究所 | Production of inverted gallium nitride base light emitting diode chip |
| CN101154656A (en) * | 2006-09-30 | 2008-04-02 | 香港微晶先进封装技术有限公司 | Multi-chip light emitting diode module group structure and method of producing the same |
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN105870070A (en) * | 2016-05-17 | 2016-08-17 | 歌尔声学股份有限公司 | Optical sensor packaging structure and integrated plate thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI260795B (en) * | 2004-03-22 | 2006-08-21 | South Epitaxy Corp | Flip chip type- light emitting diode package |
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2017
- 2017-12-27 CN CN201711453233.7A patent/CN108091646B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1780002A (en) * | 2004-11-19 | 2006-05-31 | 中国科学院半导体研究所 | Production of inverted gallium nitride base light emitting diode chip |
| CN1731592A (en) * | 2005-08-26 | 2006-02-08 | 杭州士兰明芯科技有限公司 | Flip-chip bonded structure light-emitting diode and its manufacture method |
| CN101154656A (en) * | 2006-09-30 | 2008-04-02 | 香港微晶先进封装技术有限公司 | Multi-chip light emitting diode module group structure and method of producing the same |
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN105870070A (en) * | 2016-05-17 | 2016-08-17 | 歌尔声学股份有限公司 | Optical sensor packaging structure and integrated plate thereof |
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