CN108075742A - Elastic wave component and its composite substrate - Google Patents
Elastic wave component and its composite substrate Download PDFInfo
- Publication number
- CN108075742A CN108075742A CN201611021062.6A CN201611021062A CN108075742A CN 108075742 A CN108075742 A CN 108075742A CN 201611021062 A CN201611021062 A CN 201611021062A CN 108075742 A CN108075742 A CN 108075742A
- Authority
- CN
- China
- Prior art keywords
- substrate
- wave component
- elastic wave
- silicon substrate
- electrode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 239000002131 composite material Substances 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000002019 doping agent Substances 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 238000009825 accumulation Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
- H03H9/02724—Comb like grating lines
- H03H9/02732—Bilateral comb like grating lines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02881—Means for compensation or elimination of undesirable effects of diffraction of wave beam
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
Abstract
A kind of elastic wave component, include a composite substrate, a positive electrode structure and a negative electrode structure, wherein composite substrate is engaged by a silicon substrate with a piezoelectric substrate, positive electrode structure is arranged at negative electrode structure on the piezoelectric substrate, wherein, there is the silicon substrate surface to be engaged with the piezoelectric substrate, and the sheet resistance on the surface is more than 10000ohm/square.So as to avoid charge accumulation on a silicon substrate at the surface, avoid the formation of parasitic bulk acoustic wave component and generate bulk acoustic wave interference.
Description
Technical field
The present invention is related with surface acoustic wave component；Particularly relate to a kind of elastic wave component and its composite substrate.
Background technology
Elastic wave component is chiefly used in the purposes of surface acoustic wave filter or resonator.Fig. 1 show existing elastic wave group
Part 100 includes a composite substrate 10 and a fourchette electrode structure 16, wherein, composite substrate 10 is by a fid substrate 12
It is engaged with a piezoelectric substrate 14, fourchette electrode structure 16 is arranged at the surface of the piezoelectric substrate 14.Fid base is set
The purpose of plate 12 is to form restraining force to piezoelectric substrate 14, so as to reduce heat expansion of the piezoelectric substrate 14 caused by temperature changes
The deformation of shrinkage, and influence the centre frequency drift of elastic wave component 100.After bestowing electric signal to fourchette electrode structure 16, i.e.,
Surface acoustic wave can be generated.
In order to reduce the cost of manufacture of composite substrate, fid substrate 12 is mostly using used in wafer foundry at present
Silicon substrate, though can reduce the material cost of composite substrate 10 using foregoing silicon substrate, general silicon substrate resistivity is low, because
This, fid substrate 12 will form the electricity of conductor/insulation body/conductor with piezoelectric substrate 14 thereon and fourchette electrode structure 16
Hold structure.After electric signal is bestowed to fourchette electrode structure 16, the charge of fid substrate 12 will be accumulated close to fid
Substrate 12 and 14 interface of piezoelectric substrate, in this way, will parasitic bulk acoustic wave (Bulk Acoustic Wave, BAW) component be formed.
It please coordinate Fig. 2, shown in solid is using the frequency response curve of the elastic wave component 100 of silicon substrate, and dotted line show standard
The frequency response curve of elastic wave component, from Fig. 2, parasitic bulk acoustic wave component will generate elastic wave component 100
Bulk acoustic wave is interfered so that working band generates the attenuation of ripple (ripple) form, influences the output signal of elastic wave component 100
Quality.
The content of the invention
In view of this, it is an object of the invention to provide a kind of elastic wave component and its composite substrate, it can effectively avoid production
Raw body sound wave interference.
To reach above-mentioned purpose, the composite substrate of a kind of elastic wave component provided by the invention, include a silicon substrate with
One piezoelectric substrate, wherein, which has a surface, and the sheet resistance on the surface is more than 10000ohm/square；The piezoelectricity
Substrate is incorporated into the surface of the silicon substrate.
A kind of elastic wave component provided by the invention includes a silicon substrate, a piezoelectric substrate, a positive electrode structure and one
Negative electrode structure, wherein, which has a surface, and the sheet resistance on the surface is more than 10000ohm/square；The piezoelectricity
Substrate has a upper surface and a lower surface, which is incorporated into the surface of the silicon substrate；The positive electrode structure is negative with this
Electrode structure is arranged at the upper surface.
Effect of the invention is that by high-resistance silicon substrate, charge accumulation neighbouring surface on a silicon substrate can be avoided
Place avoids the formation of parasitic bulk acoustic wave component and generates bulk acoustic wave interference.
Description of the drawings
Fig. 1 is the schematic cross-sectional view of existing elastic wave component.
Fig. 2 is the frequency response chart of existing elastic wave component and the elastic wave component of standard.
Fig. 3 is the schematic top plan view of the elastic wave component of one embodiment of the present invention.
Fig. 4 is the schematic cross-sectional view of the elastic wave component of above preferred embodiment.
【Symbol description】
[existing]
100 elastic wave components
10 composite substrate, 12 fid substrate, 14 piezoelectric substrate
16 fourchette electrode structures
[present invention]
200 elastic wave components
20 composite substrates
22 silicon substrate, 222 surface
24 piezoelectric substrate, 242 upper surface, 244 lower surface
26 fourchette electrode structure, 262 positive electrode structure, 264 negative electrode structure
Specific embodiment
For that can be illustrated more clearly that the present invention, hereby lift a preferred embodiment and schema is coordinated to be described in detail as after.It please join Fig. 3
It is the elastic wave component 200 of one embodiment of the present invention shown in Fig. 4, elastic wave component 200 is acoustic surface wave filter
Or resonator, include a composite substrate 20 and a fourchette electrode structure 26, wherein：
Composite substrate 20 is to be engaged to be formed by the substrate of two panels independence, which is respectively a silicon substrate 22 and a piezoelectricity
Substrate 24, wherein, which has a surface 222, and the sheet resistance on the surface 222 is more than 10000ohm/square, excellent
It elects more than 25000ohm/square as, is more preferably more than 30000ohm/square.The silicon substrate 22, which can be used to float, melts belt length crystalline substance
High silicon substrate, low-doped silicon substrate or the undoped silicon substrate of impedance value that method (Float zone, FZ) makes.Before
It is low-doped with undoped silicon substrate Czochralski method (Czochralski, CZ) to can be used to make in stating.Low-doped silicon substrate
Plate has at least one dopant, and the doping concentration of the dopant is 10-13atom/cm3Hereinafter, more specifically, dopant includes
One of phosphorus, boron, arsenic, wherein, the doping concentration of phosphorus is 10-14atom/cm3Hereinafter, the doping concentration of boron or arsenic is 10- 13atom/cm3Below.By low-doped or undoped silicon substrate, sheet resistance can equally be higher than 10000ohm/square with
On.
The piezoelectric substrate 24 is lithium tantalate (Lithium Tantlate) substrate in the present embodiment, and but not limited to this,
It can be lithium niobate (Lithium Niobate) substrate.The piezoelectric substrate 24 has a upper surface 242 and a lower surface 244, under this
Surface 244 is engaged with the surface 222 of the silicon substrate 22.In implementation, the juncture of piezoelectric substrate 24 and silicon substrate 22 can be with
Using plasma activation engagement (Plasma Activated Bonding), covalently engagement (Covalent Bonding) are glutinous
Engagement (Adhesive Bonding).
The fourchette electrode structure 26 in this present embodiment for finger-fork type energy converter (Inter Digital Transducer,
IDT), at least a positive electrode structure 262 and an at least negative electrode structure for the upper surface 242 for being arranged at piezoelectric substrate 24 is included
264, positive electrode structure 262 is to be staggeredly set with negative electrode structure 264.
By above-mentioned design, silicon substrate 22 can provide enough support forces, and compensation piezoelectric substrate 24 is due to temperature change
The deformation of generation, and after applying to positive electrode structure 262 and negative electrode structure 264 after electric signal, you can make the elastic wave group
Part 200 generates surface acoustic wave.Due to a height of more than the 10000ohm/square of sheet resistance on the surface 222 of silicon substrate 22, belong to high
The substrate of impedance namely with low conductivity, therefore, charge will not accumulate the position close to surface in silicon substrate 22, avoid shape
Into parasitic bulk acoustic wave component so that elastic wave component 200 of the invention does not have bulk acoustic wave interference.So as to effectively reduce bullet
Property ripple component 200 formed in working band ripple (ripple) form attenuation chance.
The foregoing is merely preferably possible embodiments of the invention, using description of the invention and model is applied for a patent such as
Equivalence changes carried out by enclosing ought to be included in the scope of the claims of the present invention.
Claims (9)
1. a kind of composite substrate of elastic wave component, which is characterized in that include：
One silicon substrate has a surface, and the sheet resistance on the surface is more than 10000ohm/square；And
One piezoelectric substrate is incorporated into the surface of the silicon substrate.
2. the composite substrate of elastic wave component as described in claim 1, which is characterized in that the sheet resistance of the wherein silicon substrate is
More than 25000ohm/square.
3. the composite substrate of elastic wave component as described in claim 1, which is characterized in that wherein the silicon substrate has at least one
Dopant, the doping concentration of the dopant is 10-13atom/cm3Below.
4. the composite substrate of elastic wave component as claimed in claim 3, which is characterized in that the wherein dopant bag of the silicon substrate
One of phosphorus, boron, arsenic are included, wherein, the doping concentration of phosphorus is 10-14atom/cm3Hereinafter, the doping concentration of boron or arsenic is 10-13atom/cm3Below.
5. a kind of elastic wave component, which is characterized in that include：
One silicon substrate has a surface, and the sheet resistance on the surface is more than 10000ohm/square；
One piezoelectric substrate has a upper surface and a lower surface, which is incorporated into the surface of the silicon substrate；And
One positive electrode structure and a negative electrode structure, are arranged at the upper surface.
6. elastic wave component as claimed in claim 5, which is characterized in that the sheet resistance on the wherein surface of the silicon substrate is
More than 25000ohm/square.
7. elastic wave component as claimed in claim 5, which is characterized in that wherein the silicon substrate has at least one dopant,
The doping concentration of the dopant is 10-13atom/cm3Below.
8. elastic wave component as claimed in claim 7, which is characterized in that wherein the dopant of the silicon substrate includes phosphorus, boron, arsenic
One of, wherein, the doping concentration of phosphorus is 10-14atom/cm3Hereinafter, the doping concentration of boron or arsenic is 10-13atom/cm3
Below.
9. elastic wave component as claimed in claim 5, which is characterized in that wherein the elastic wave component filters for elastic surface wave
Device or resonator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611021062.6A CN108075742A (en) | 2016-11-15 | 2016-11-15 | Elastic wave component and its composite substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611021062.6A CN108075742A (en) | 2016-11-15 | 2016-11-15 | Elastic wave component and its composite substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108075742A true CN108075742A (en) | 2018-05-25 |
Family
ID=62160634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611021062.6A Pending CN108075742A (en) | 2016-11-15 | 2016-11-15 | Elastic wave component and its composite substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108075742A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005347295A (en) * | 2004-05-31 | 2005-12-15 | Shin Etsu Chem Co Ltd | Compound piezoelectric substrate |
| CN1913107A (en) * | 2004-08-12 | 2007-02-14 | 硅电子股份公司 | Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby |
| CN101237009A (en) * | 2008-02-29 | 2008-08-06 | 上海大学 | Making method for ultraviolet detector with common plane grid structure |
-
2016
- 2016-11-15 CN CN201611021062.6A patent/CN108075742A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005347295A (en) * | 2004-05-31 | 2005-12-15 | Shin Etsu Chem Co Ltd | Compound piezoelectric substrate |
| CN1913107A (en) * | 2004-08-12 | 2007-02-14 | 硅电子股份公司 | Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby |
| CN101237009A (en) * | 2008-02-29 | 2008-08-06 | 上海大学 | Making method for ultraviolet detector with common plane grid structure |
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180525 |
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| WD01 | Invention patent application deemed withdrawn after publication |