CN108075346A - A kind of microlaser of ultrashort pulse high-peak power - Google Patents
A kind of microlaser of ultrashort pulse high-peak power Download PDFInfo
- Publication number
- CN108075346A CN108075346A CN201810024761.9A CN201810024761A CN108075346A CN 108075346 A CN108075346 A CN 108075346A CN 201810024761 A CN201810024761 A CN 201810024761A CN 108075346 A CN108075346 A CN 108075346A
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- laser
- microlaser
- peak power
- ultrashort pulse
- pulse high
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1645—Solid materials characterised by a crystal matrix halide
- H01S3/1653—YLiF4(YLF, LYF)
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The invention discloses a kind of microlaser of ultrashort pulse high-peak power, including pump light source and laserresonator, the laserresonator by be arranged in order along laser optical path direction the incident mirror that is all-trans, laser gain media, Q-modulating device and form with the outgoing mirror for inhibiting the generation of higher order mode laser.Loss of the laser in laser resonance intracavitary of higher order mode is increased with the outgoing mirror for inhibiting the generation of higher order mode laser, its gain during shaking is made to be less than total losses, make the laser of higher order mode can not be formed, so as to reduce the pattern of shoot laser, improve laser beam quality.
Description
Technical field
The invention belongs to laser technology fields, are related to a kind of laser.
Background technology
Laser is one of essential core component in Modern Laser system of processing, generally apply to industry, agricultural,
The each side such as accurate measurement and detection, communication and information processing, medical treatment, military affairs, and revolutionary dash forward is caused in many fields
It is broken.Laser militarily except for communicating, night vision, early warning, in addition to ranging etc., a variety of laser weapons and laser guided weapon
Use has been put into.
Laser beam is tiny, and with huge power, a variety of materials can be processed, be industrially usually used in swashing
Light cutting, laser marking, laser engraving and laser welding, since the requirement at present industrially to machining accuracy is higher and higher,
Therefore, the requirement to laser-quality is also higher and higher, especially for the processing of high-quality submillimeter scale, all to zlasing mode M2
Value have harsh requirement.
The content of the invention
The technical problems to be solved by the invention are：Laser beam quality can be improved by providing one kind, reduce zlasing mode M2
The microlaser of the ultrashort pulse high-peak power of value.
In order to solve the above technical problems, the technical solution adopted by the present invention is：A kind of ultrashort pulse high-peak power it is micro-
Type laser is complete by being arranged in order along laser optical path direction including pump light source and laserresonator, the laserresonator
Anti- incidence mirror, laser gain media, Q-modulating device and the outgoing mirror with the laser generation of inhibition higher order mode are formed.
As a preferred solution, the outgoing mirror is convex lens.
As a preferred solution, the outgoing mirror is Gauss film outgoing mirror.
As a preferred solution, the Q-modulating device is saturable absorber.
As a preferred solution, the pump light source is High power laser diode array formula pumping source.
As a preferred solution, the laser gain media is Nd:YAG or Nd:YLF.
As a preferred solution, at least two total reflection trigones are additionally provided between the Q-modulating device and outgoing mirror
Mirror, total reflection prism are arranged to 180 ° of total reflections of incident light, and each prism that is totally reflected is arranged in order setting along laser optical path,
To extend laser beam in the in vivo light path of limited shell.
As a preferred solution, the quantity of the total reflection prism is even number.
As a preferred solution, the incident mirror that is all-trans makes laserresonator form critical unstable cavity with outgoing mirror
Body.
As a preferred solution, the Gauss film outgoing mirror is Gauss membrane plane mirror or Gauss film convex lens.
The beneficial effects of the invention are as follows：The laser of higher order mode is increased with the outgoing mirror for inhibiting the generation of higher order mode laser
Loss in resonator makes its gain during shaking be less than total losses, makes the laser of higher order mode can not be formed, so as to
The pattern of shoot laser is reduced, improves laser beam quality.
Again since saturable absorber being selected without high voltage control, therefore without water cooling system, to be adopted as Q-modulating device
It is the operating temperature of controllable laserresonator with thermoelectric (al) cooler.Stable laser temperature control considerably reduces mode of laser
The phenomenon that formula converts improves the beam quality of the laser of output.
Due to being all-trans, incident mirror makes fundamental resonance chamber form critical unstable cavity with outgoing mirror, so as to earthquake process
In, the higher order mode laser repeatedly shaken can escape laserresonator, so as to inhibit the formation of higher order mode laser, improve output
The beam quality of laser.
Description of the drawings
Fig. 1 is the structure diagram of the first specific embodiment of the invention；
Fig. 2 is the structure diagram of second of specific embodiment of the invention；
Fig. 3 is the structure diagram of the third specific embodiment of the invention.
In Fig. 1~Fig. 3：1st, pump light source, 2, be all-trans incident mirror, 3, laser gain media, 4, Q-modulating device, 5, outgoing mirror,
6th, it is totally reflected prism.
Specific embodiment
Below in conjunction with the accompanying drawings, detailed description of the present invention specific embodiment.
Embodiment 1：
As shown in Fig. 1 the first specific implementation of the microlaser of ultrashort pulse high-peak power of the present invention
Example, including including pump light source 1 and laserresonator, the resonator by the incidence of being all-trans that is arranged in order along laser optical path direction
Mirror 2, laser gain media 3, Q-modulating device 4 and the outgoing mirror 5 with the laser generation of inhibition high-order mode are formed, wherein pump light
Source 1 is High power laser diode array formula pumping source, using pump light source 1 be wavelength as 808nm, laser optical wavelength be
Exemplified by 1064nm, the incident mirror 2 that is all-trans accordingly is is all-trans 1064nm laser, the lens of full impregnated 808nm laser, and laser gain matchmaker
It is situated between that the laser gain media Nd of 1064nm wavelength lasers can be sent by the excitation of 808nm wavelength lasers:YAG, 4 basis of Q-modulating device
Demand selects photoelectricity tune Q or saturable absorber tune Q, preferably saturable absorber tune Q, and then corresponding select can be saturating for outgoing mirror 5
The convex lens of 1064nm laser is penetrated, the course of work of this practicability is：The 808nm laser that pump light source is sent passes through incidence of being all-trans
Mirror 2 enters laser gain media, and the atom-exciting in laser gain media sends the fluorescence of 1064nm wavelength, and fluorescence is humorous in laser
Stimulated radiation is generated after the interacvity gain that shakes vibration, and passes through and Q is adjusted to reduce pulsewidth, increases peak power.Without laser resonance
In the case that chamber optimizes, low order and higher order laser pattern have same probability to generate.Speculum is made using convex lens, due to height
The angle of departure drift angle of rank Mode for Laser is larger, increases the effusion loss of higher order mode laser, makes higher order mode laser earthquake
Gain in the process is less than total losses, so as to inhibit the generation of higher order mode laser, is projected eventually by 1064nm convex lenses
Laser then has the laser for low step mode, and laser beam quality significantly improves.
Embodiment 2：
Second of specific implementation of the microlaser shown in Fig. 2 for being ultrashort pulse high-peak power of the present invention
Example, compared with Example 1, for the outgoing mirror 5 used in embodiment 2 for 1064nm Gauss membrane plane mirrors, Q-modulating device 4 is saturable
Absorber, laser gain media are that the laser gain media Nd of 1064nm wavelength lasers can be sent by the excitation of 808nm wavelength lasers:
YLF, the course of work is same as Example 1, due to the trapezoidal profile of Gauss film reflectivity so that the larger higher order mode in drift angle
The reflectivity of laser substantially reduces, and so as to reduce the gain effect during the earthquake of higher order mode laser, makes higher order mode
The gain of laser is less than total losses, causes the laser of higher order mode can not be formed, eventually by 1064nm Gauss membrane plane mirrors
The laser gone out then has the laser for low step mode, and laser beam quality significantly improves.
At the same time, if outgoing mirror is arranged to 1064nm Gauss film convex lenses, the effect of higher order mode laser is inhibited
Fruit is more preferable, the laser beam quality higher of acquisition.
Embodiment 3：
As shown in Fig. 3 the third specific implementation of the microlaser of ultrashort pulse high-peak power of the present invention
Example, including High power laser diode array formula pumping source, 1064nm is all-trans, the incident mirror 2 that is all-trans of 808nm full impregnateds, and laser increases
Beneficial medium 3 is Nd:YAG, Q-modulating device 4 are saturable absorber, and outgoing mirror 5 is convex lens, compared with embodiment, in embodiment 3
Two total reflection prisms are added, light path of the laser in laser resonance intracavitary is extended, further increases higher order mode laser
Loss, to improve the laser beam quality of the output of outgoing mirror 5, if outgoing mirror 5 in embodiment 3 further selects Gauss film
Convex lens, then laser beam quality can further improve, zlasing mode M2 values can be less than 1.5, reach defect mode.
The embodiment that the principles and effects of the invention is only illustrated in above-described embodiment and part uses,
And is not intended to limit the present invention；It should be pointed out that for those of ordinary skill in the art, the invention structure is not being departed from
On the premise of think of, various modifications and improvements can be made, these belong to protection scope of the present invention.
Claims (10)
1. a kind of microlaser of ultrashort pulse high-peak power, which is characterized in that including pump light source (1) and laser resonance
Chamber, the laserresonator by be arranged in order along laser optical path direction the incident mirror (2) that is all-trans, laser gain media (3), adjust Q
Device (4) and outgoing mirror (5) composition with the laser generation of inhibition higher order mode.
2. the microlaser of a kind of ultrashort pulse high-peak power according to claim 1, which is characterized in that described defeated
Appearance (5) is convex lens.
3. the microlaser of a kind of ultrashort pulse high-peak power according to claim 1, which is characterized in that described defeated
Appearance (5) is Gauss film outgoing mirror.
A kind of 4. microlaser of ultrashort pulse high-peak power according to claim 1, which is characterized in that the tune
Q devices (4) are saturable absorber.
A kind of 5. microlaser of ultrashort pulse high-peak power according to claim 1, which is characterized in that the pump
Pu light source (1) is High power laser diode array formula pumping source.
6. the microlaser of a kind of ultrashort pulse high-peak power according to claim 1, which is characterized in that described to swash
Optical gain media (3) is Nd:YAG or Nd:YLF.(but being not limited to this two kinds of gain medias).
7. according to a kind of microlaser of any ultrashort pulse high-peak power of claim 1~6, feature exists
In being additionally provided at least two total reflection prisms (6) between the Q-modulating device (4) and outgoing mirror (5), be totally reflected prism
(6) it is arranged to, to 180 ° of total reflections of incident light, respectively be totally reflected prism (6) and be arranged in order setting along laser optical path, to extend swash
Light light beam is in the in vivo light path of limited shell.
8. the microlaser of a kind of ultrashort pulse high-peak power according to claim 7, which is characterized in that described complete
The quantity of reflex prism (6) is even number.
9. the microlaser of a kind of ultrashort pulse high-peak power according to claim 2, which is characterized in that described complete
Anti- incidence mirror (2) makes laserresonator form critical unstable cavity with outgoing mirror (5).
10. the microlaser of a kind of ultrashort pulse high-peak power according to claim 3, which is characterized in that described
Gauss film outgoing mirror is Gauss membrane plane mirror or Gauss film convex lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810024761.9A CN108075346A (en) | 2018-01-11 | 2018-01-11 | A kind of microlaser of ultrashort pulse high-peak power |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810024761.9A CN108075346A (en) | 2018-01-11 | 2018-01-11 | A kind of microlaser of ultrashort pulse high-peak power |
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