CN108074836B - Method and system for solving spherical defect in shallow trench isolation etching - Google Patents
Method and system for solving spherical defect in shallow trench isolation etching Download PDFInfo
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Abstract
The invention provides a method and a system for solving a spherical defect in shallow trench isolation etching, wherein the method comprises the following steps: collecting parameters which are fed back when the machine platform runs and are related to the cause of the spherical defect; analyzing the parameters to determine a spherical defect high-incidence parameter area; and controlling the parameters to avoid the spherical defect high-incidence parameter area. According to the method and the system for solving the spherical defect in the shallow trench isolation etching, the defect high-incidence area is obtained by carrying out contrastive analysis on the parameters related to the spherical defect cause, so that the spherical defect can be avoided by avoiding the area, the product yield can be improved, the operation time of a machine table can be improved, and the service life of machine table parts can be prolonged.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a method and a system for solving a spherical defect in Shallow Trench Isolation (STI) etching.
Background
In the integrated circuit fabrication process, the quality of the wafer (wafer) process has a decisive influence on the performance of the circuit. The fabrication of Shallow Trench Isolation (STI) is a front-end based process for the processing of integrated circuits.
Current trench etching of STI often encounters ball defects. The reason of the spherical defect is that the edge of an electrostatic chuck (ESC) for adsorbing and fixing the wafer is subjected to strong electric power to bombard tip discharge, the electric arc degree is generated from the edge of the wafer, and the high-temperature electric arc fuses silicon (Si) and aluminum (Al) of the electrostatic chuck into spherical objects which fall on the surface of the wafer to prevent normal etching from forming the spherical defect.
The existing method and system for controlling the spherical defects stop the operation of the machine when the related machine parameters exceed the safety range, and carry out Preventive Maintenance (PM) by equipment personnel to replace quartz ring gaskets, or replace electrostatic chucks under the condition that the replacement of the quartz ring gaskets is invalid. Such methods and systems are inefficient and costly.
Disclosure of Invention
The invention provides a method for solving a spherical defect in shallow trench isolation etching, which comprises the following steps: collecting parameters which are fed back when the machine platform runs and are related to the cause of the spherical defect; analyzing the parameters to determine a spherical defect high-incidence parameter area; and controlling the parameters to avoid the spherical defect high-incidence parameter area.
In one embodiment of the present invention, the parameters include a first parameter and a second parameter, the first parameter is a leakage current of the electrostatic chuck, and the second parameter is a position of a wafer notch corresponding to the electrostatic chuck.
In an embodiment of the present invention, the step of analyzing the parameters to determine the high incidence parameter area of the ball-type defect further includes: performing fitting analysis on the first parameter and the second parameter collected aiming at the current wafer to determine a numerical value region of the second parameter corresponding to the condition that the first parameter is greater than a preset threshold value, and taking the numerical value region as the spherical defect high incidence parameter region.
In an embodiment of the present invention, the step of controlling the parameters to avoid the ball-type defect high incidence parameter area further includes: recording the numerical value in the spherical defect high-incidence parameter area as a dangerous numerical value, and modifying the numerical value of the second parameter of the subsequent wafer before the numerical value of the second parameter of the subsequent wafer reaches the dangerous numerical value so as to avoid spherical defects on the subsequent wafer.
In one embodiment of the invention, the method further comprises: and when the first parameter is determined to be larger than the preset threshold value, adding a preset value to the second parameter to modify the value of the second parameter so as to avoid spherical defects on the next wafer.
In another aspect, the present invention further provides a system for resolving ball-type defects in shallow trench isolation etching, the system comprising: the collection module is used for collecting parameters which are fed back when the machine platform runs and are related to the cause of the spherical defect; the analysis module is used for analyzing the parameters to determine a spherical defect high-incidence parameter area; and the control module is used for controlling the parameters to avoid the spherical defect high-incidence parameter area.
In one embodiment of the present invention, the parameters include a first parameter and a second parameter, the first parameter is a leakage current of the electrostatic chuck, and the second parameter is a position of a wafer notch corresponding to the electrostatic chuck.
In an embodiment of the invention, the analysis module is further configured to: performing fitting analysis on the first parameter and the second parameter collected aiming at the current wafer to determine a numerical value region of the second parameter corresponding to the condition that the first parameter is greater than a preset threshold value, and taking the numerical value region as the spherical defect high incidence parameter region.
In one embodiment of the invention, the control module is further configured to: recording the numerical value in the spherical defect high-incidence parameter area as a dangerous numerical value, and modifying the numerical value of the second parameter of the subsequent wafer before the numerical value of the second parameter of the subsequent wafer reaches the dangerous numerical value so as to avoid spherical defects on the subsequent wafer.
In one embodiment of the invention, the analysis module is further configured to determine whether the first parameter is greater than a predetermined threshold; and the control module is also used for adding a preset value to the second parameter to modify the value of the second parameter when the first parameter is larger than a preset threshold value so as to avoid the generation of spherical defects on the next wafer.
According to the method and the system for solving the spherical defect in the shallow trench isolation etching, the defect high-incidence area is obtained by carrying out contrastive analysis on the parameters related to the spherical defect cause, so that the spherical defect can be avoided by avoiding the area, the product yield can be improved, the operation time of a machine table can be improved, and the service life of machine table parts can be prolonged.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
FIGS. 1A and 1B are schematic views showing causes of a ball-type defect;
FIG. 2 illustrates an exemplary flow chart of a method for addressing ball-type defects in shallow trench isolation etching according to an embodiment of the present invention;
FIG. 3 shows a plot of a fit analysis of the parameters of the method shown in FIG. 2; and
figure 4 illustrates an exemplary block diagram of a system for addressing ball-type defects in shallow trench isolation etching, in accordance with an embodiment of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to provide a thorough understanding of the present invention, detailed steps and detailed structures will be set forth in the following description in order to explain the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
As previously mentioned, current trench etching of STI often encounters ball type defects. The reason for the spherical defects is that the edge of the electrostatic chuck for adsorbing and fixing the wafer is subjected to strong electric power bombardment tip discharge to generate electric arc degree from the edge of the wafer, and the high-temperature electric arc melts silicon and aluminum of the electrostatic chuck into spherical objects which fall on the surface of the wafer to prevent normal etching and form the spherical defects, as shown in the front view of fig. 1A and the schematic diagram of the top view of fig. 1B.
Through a large amount of data summarization, the parameter of the leakage current of the electrostatic chuck of the machine is found to be related to the strength of the spherical defect, and whether the etching state of the machine is good or not can be reflected. In addition, when the STI etching machine etches products, the position of a notch (notch) of a wafer corresponding to the electrostatic chuck rotates along with the etching time of the machine before the wafer enters the etching cavity, so that the position of the notch of the wafer corresponding to the electrostatic chuck is also related to the spherical defect.
The current control method for the spherical defects is to adopt an Advanced Process Control (APC) system of an etching system to collect the average value and the maximum value of leakage current parameters of the electrostatic chuck in the etching process of each wafer of each machine table, output the leakage current values of the electrostatic chuck monitored when each etching cavity etches the wafer to the APC system according to the time sequence, set a safe threshold value in the APC system, shut down the machine to enable equipment personnel to perform preventive maintenance and replace a quartz ring gasket if a plurality of continuous points exceed the safe threshold value, and replace the electrostatic chuck if replacing the quartz ring gasket is invalid. Such a process is inefficient and costly.
In order to overcome the defects of the prior art, the invention provides a method for solving the spherical defects in shallow trench isolation etching, which obtains a defect high-incidence area by performing comparative analysis on parameters related to spherical defect causes, so that the spherical defects can be avoided by avoiding the area.
Figure 2 illustrates an exemplary flow chart of a method 200 for addressing ball-type defects in shallow trench isolation etching in accordance with an embodiment of the present invention. As shown in fig. 2, a method 200 for resolving ball-type defects in shallow trench isolation etching includes the steps of:
in step S210, parameters related to the cause of the spherical defect fed back when the machine runs are collected.
In this step, parameters related to the cause of the spherical defects may be collected for the same wafer during the run of the machine. In one example, the collected parameters related to the cause of the ball-type defect may include a first parameter and a second parameter. The first parameter is a leakage current of the electrostatic chuck, and the second parameter is a position of the wafer notch corresponding to the electrostatic chuck. Here, the first parameter and the second parameter are so named merely to distinguish from each other, and do not play a limiting role.
In step S220, the parameters are analyzed to determine a spherical defect high incidence parameter area.
In one example, the analysis of the parameters may include: it is determined whether the first parameter (i.e., the leakage current of the electrostatic chuck) is greater than a predetermined threshold (safety threshold), and if not, operation continues. On the contrary, if the first parameter is greater than the predetermined threshold, fitting analysis is performed on the first parameter (i.e., the leakage current of the electrostatic chuck) and the second parameter (i.e., the position of the wafer notch corresponding to the electrostatic chuck) collected for the current wafer, so as to determine a numerical value region of the second parameter corresponding to the first parameter greater than the predetermined threshold, and the numerical value region is used as a spherical defect high-incidence parameter region.
Wherein the fitting analysis of the first parameter and the second parameter is: fitting the first parameter and the second parameter collected for the same wafer together to form a dot-matrix diagram (as shown in fig. 3), and analyzing a numerical region of the second parameter corresponding to a part where the numerical value of the first parameter exceeds a predetermined threshold according to the fitted dot-matrix diagram. As shown in fig. 3, the bottom rhomboid stack portion is the portion above the predetermined threshold, which is concentrated in the section where the dangerous area of the second parameter is present.
According to an embodiment of the present invention, when it is determined that the first parameter is greater than the predetermined threshold, the following steps may be performed before step S220: the second parameter is added with a preset value (such as a base set by an engineer, and the base can be freely set by the engineer according to the damage degree and the area of the electrostatic chuck) to modify the value of the second parameter, so that the condition that the first parameter is larger than the preset threshold value does not exist on the next wafer, and the spherical defect is avoided on the next wafer. In this step, when it is determined that the first parameter is greater than the predetermined threshold, the value of the second parameter is modified directly using the cardinality value preset by the engineer, i.e. the potentially dangerous area is presumably skipped, which estimation may not be sufficiently accurate. Therefore, step S220 can be performed thereafter to accurately determine the spherical defect high incidence parameter area.
In step S230, the parameters are controlled to avoid the ball-type defect high-incidence parameter area.
In one example, the step of controlling the parameters to avoid the ball-type defect high incidence parameter area may further include: and recording the numerical value in the spherical defect high-incidence parameter area as a dangerous numerical value, and modifying the numerical value of the second parameter of the subsequent wafer before the numerical value of the second parameter of the subsequent wafer reaches the dangerous numerical value so as to avoid spherical defects on the subsequent wafer.
Based on the spherical defect high incidence parameter area determined in step S220, a specific value in the parameter area can be recorded as a risk value. Based on the method, the value of the second parameter of the subsequent wafer can be monitored, and before the value reaches any dangerous value, the value can be modified, so that the value can skip the spherical defect high-incidence parameter area, and the spherical defect can be avoided from being generated on the subsequent wafer.
Based on the above description, the method for solving the ball-type defect in the shallow trench isolation etching provided by the invention obtains the defect high-incidence region by performing the comparative analysis on the parameters related to the ball-type defect cause, so that the generation of the ball-type defect can be avoided by avoiding the region, the product yield can be improved, the operation time of the machine can be improved, and the service life of the machine part (such as a quartz ring gasket and an electrostatic chuck) can be prolonged, thereby reducing the cost, including the labor cost.
In another aspect, the present invention further provides a system for resolving ball-type defects in shallow trench isolation etching, and fig. 4 shows a schematic block diagram of a system 400 for resolving ball-type defects in shallow trench isolation etching according to an embodiment of the present invention. As shown in fig. 4, a system 400 for addressing ball-type defects in shallow trench isolation etching includes: a collection module 410, an analysis module 420, and a control module 430.
The collecting module 410 is configured to collect parameters related to the cause of the spherical defect, which are fed back when the machine runs. The analysis module 420 is configured to analyze the parameters to determine a spherical defect high incidence parameter area. The control module 430 is configured to control the parameters to avoid the ball defect high incidence parameter area.
In one embodiment of the present invention, the collection module 410 may collect parameters related to the cause of spherical defects for the same wafer during machine run. In one example, the parameters related to the cause of the ball-type defect collected by the collection module 410 may include a first parameter and a second parameter. The first parameter is a leakage current of the electrostatic chuck, and the second parameter is a position of the wafer notch corresponding to the electrostatic chuck. Here, the first parameter and the second parameter are so named merely to distinguish from each other, and do not play a limiting role.
In one embodiment of the present invention, the analysis of the parameters by the analysis module 420 may include: it is determined whether the first parameter (i.e., the leakage current of the electrostatic chuck) is greater than a predetermined threshold (safety threshold), and if not, operation continues. On the contrary, if the first parameter is greater than the predetermined threshold, fitting analysis is performed on the first parameter (i.e., the leakage current of the electrostatic chuck) and the second parameter (i.e., the position of the wafer notch corresponding to the electrostatic chuck) collected for the current wafer, so as to determine a numerical value region of the second parameter corresponding to the first parameter greater than the predetermined threshold, and the numerical value region is used as a spherical defect high-incidence parameter region.
The fitting analysis of the analysis module 420 on the first parameter and the second parameter is: fitting the first parameter and the second parameter collected for the same wafer together to form a dot-matrix diagram (as shown in fig. 3), and analyzing a numerical region of the second parameter corresponding to a part where the numerical value of the first parameter exceeds a predetermined threshold according to the fitted dot-matrix diagram. As shown in fig. 3, the bottom rhomboid stack portion is the portion above the predetermined threshold, which is concentrated in the section where the dangerous area of the second parameter is present.
In one embodiment of the invention, the control module 430 may be further configured to: and recording the numerical value in the spherical defect high-incidence parameter area as a dangerous numerical value, and modifying the numerical value of the second parameter of the subsequent wafer before the numerical value of the second parameter of the subsequent wafer reaches the dangerous numerical value so as to avoid spherical defects on the subsequent wafer.
Based on the spherical defect high incidence parameter area determined by the analysis module 420, the control module 430 may record a specific value in the parameter area as a dangerous value. Based on this, the value of the second parameter of the subsequent wafer can be monitored, and before the value reaches any dangerous value, the control module 430 can modify the value so as to skip the ball defect high incidence parameter area, thereby avoiding the ball defect on the subsequent wafer.
In one embodiment of the present invention, when the analysis module 420 determines that the first parameter is greater than the predetermined threshold, the control module 430 may directly add the second parameter to a preset value (e.g., a base set by an engineer, which may be freely set by the engineer according to the damage degree and area of the electrostatic chuck) to modify the value of the second parameter, so that the condition that the first parameter is greater than the predetermined threshold does not exist on the next wafer, thereby preventing the generation of ball defects on the next wafer. In this embodiment, when the analysis module 420 determines that the first parameter is greater than the predetermined threshold, the control module 430 modifies the value of the second parameter directly using the cardinality value preset by the engineer, i.e., evaluative skipping of potentially dangerous areas, which may not be sufficiently accurate. Therefore, the analysis module 420 can continue to perform the fitting analysis to accurately determine the spherical defect high-incidence parameter region, and the control module 430 controls the parameters to accurately avoid the spherical defect high-incidence parameter region, so as to avoid the spherical defect on the subsequent wafer.
Based on the above description, the system for solving the ball-type defect in the shallow trench isolation etching provided by the present invention obtains the defect high incidence region by performing the comparative analysis on the parameters related to the ball-type defect cause, so that the generation of the ball-type defect can be avoided by avoiding the region, which not only can improve the product yield, but also can improve the operation time of the machine and prolong the service life of the machine components (such as the quartz ring gasket and the electrostatic chuck), thereby reducing the cost, including the labor cost.
Those of ordinary skill in the art will appreciate that the various illustrative modules and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware or other implementations. For example, the method and system for addressing ball-type defects in shallow trench isolation etching according to the above-described embodiments of the present invention may be implemented by an advanced process control system capable of implementing the functions of the various steps/modules of the above-described method/system. The manner in which these functions are performed will depend on the particular application and design constraints imposed on the technical solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
Although the foregoing example embodiments have been described with reference to the accompanying drawings, it is to be understood that the foregoing example embodiments are merely illustrative and are not intended to limit the scope of the invention thereto. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the present invention. All such changes and modifications are intended to be included within the scope of the present invention as set forth in the appended claims.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the invention and aiding in the understanding of one or more of the various inventive aspects. However, the method of the present invention should not be construed to reflect the intent: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
It will be understood by those skilled in the art that all of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where such features are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.
The above description is only for the specific embodiment of the present invention or the description thereof, and the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the protection scope of the present invention. The protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. A method for solving spherical defects in shallow trench isolation etching is characterized by comprising the following steps:
collecting parameters which are fed back when the machine platform runs and are related to the cause of the spherical defect;
analyzing the parameters to determine a spherical defect high-incidence parameter area; and
controlling the parameters to avoid the spherical defect high-incidence parameter area;
the parameters comprise a first parameter and a second parameter, wherein the first parameter is leakage current of the electrostatic chuck, and the second parameter is a position of a wafer notch corresponding to the electrostatic chuck;
the step of analyzing the parameters to determine the spherical defect high incidence parameter area further comprises:
performing fitting analysis on the first parameter and the second parameter collected aiming at the current wafer to determine a numerical value region of the second parameter corresponding to the condition that the first parameter is greater than a preset threshold value, and taking the numerical value region as the spherical defect high incidence parameter region.
2. The method according to claim 1, wherein the step of controlling the parameters to avoid the ball-type defect high incidence parameter area further comprises:
recording the numerical value in the spherical defect high-incidence parameter area as a dangerous numerical value, and modifying the numerical value of the second parameter of the subsequent wafer before the numerical value of the second parameter of the subsequent wafer reaches the dangerous numerical value so as to avoid spherical defects on the subsequent wafer.
3. The method of claim 1, further comprising: and when the first parameter is determined to be larger than the preset threshold value, adding a preset value to the second parameter to modify the value of the second parameter so as to avoid spherical defects on the next wafer.
4. A system for addressing ball-type defects in shallow trench isolation etching, the system comprising:
the collection module is used for collecting parameters which are fed back when the machine platform runs and are related to the cause of the spherical defect;
the analysis module is used for analyzing the parameters to determine a spherical defect high-incidence parameter area; and
the control module is used for controlling the parameters to avoid the spherical defect high-incidence parameter area;
the parameters comprise a first parameter and a second parameter, wherein the first parameter is leakage current of the electrostatic chuck, and the second parameter is a position of a wafer notch corresponding to the electrostatic chuck;
the analysis module is further to:
performing fitting analysis on the first parameter and the second parameter collected aiming at the current wafer to determine a numerical value region of the second parameter corresponding to the condition that the first parameter is greater than a preset threshold value, and taking the numerical value region as the spherical defect high incidence parameter region.
5. The system of claim 4, wherein the control module is further configured to:
recording the numerical value in the spherical defect high-incidence parameter area as a dangerous numerical value, and modifying the numerical value of the second parameter of the subsequent wafer before the numerical value of the second parameter of the subsequent wafer reaches the dangerous numerical value so as to avoid spherical defects on the subsequent wafer.
6. The system of claim 4,
the analysis module is further to determine whether the first parameter is greater than a predetermined threshold; and is
The control module is further used for adding a preset value to the second parameter to modify the value of the second parameter when the first parameter is larger than a preset threshold value so as to avoid spherical defects on the next wafer.
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| CN1639854A (en) * | 2002-03-21 | 2005-07-13 | 应用材料有限公司 | Correlation of end-of-line data mining with process tool data mining |
| CN102426421A (en) * | 2011-11-30 | 2012-04-25 | 上海华力微电子有限公司 | Advanced process control method for plasma etching |
| CN105140115A (en) * | 2015-07-22 | 2015-12-09 | 上海华力微电子有限公司 | Method for improving spherical defect by optimizing charge releasing step process condition |
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| CN1639854A (en) * | 2002-03-21 | 2005-07-13 | 应用材料有限公司 | Correlation of end-of-line data mining with process tool data mining |
| CN102426421A (en) * | 2011-11-30 | 2012-04-25 | 上海华力微电子有限公司 | Advanced process control method for plasma etching |
| CN105140115A (en) * | 2015-07-22 | 2015-12-09 | 上海华力微电子有限公司 | Method for improving spherical defect by optimizing charge releasing step process condition |
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