CN108064420B - 异质结及由其衍生的电子器件 - Google Patents

异质结及由其衍生的电子器件 Download PDF

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CN108064420B
CN108064420B CN201580081002.0A CN201580081002A CN108064420B CN 108064420 B CN108064420 B CN 108064420B CN 201580081002 A CN201580081002 A CN 201580081002A CN 108064420 B CN108064420 B CN 108064420B
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graphene
heterojunction
layer
hbn
quantum well
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CN108064420A (zh
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弗雷德里克·威特斯
康斯坦丁·诺沃肖洛夫
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Nanoco Technologies Ltd
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CN201580081002.0A 2015-06-18 2015-06-18 异质结及由其衍生的电子器件 Expired - Fee Related CN108064420B (zh)

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PCT/GB2015/051784 WO2016203184A1 (en) 2015-06-18 2015-06-18 Heterostructures and electronic devices derived therefrom

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US (1) US10692977B2 (ko)
EP (1) EP3311410A1 (ko)
JP (1) JP6637526B2 (ko)
KR (2) KR20190108199A (ko)
CN (1) CN108064420B (ko)
WO (1) WO2016203184A1 (ko)

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EP3329509A1 (en) 2015-07-31 2018-06-06 Crayonano AS Process for growing nanowires or nanopyramids on graphitic substrates
US10714648B2 (en) * 2016-01-25 2020-07-14 University-Industry Cooperation Group Of Kyung Hee University Solar cell with graphene-silicon quantum dot hybrid structure and method of manufacturing the same
WO2018009931A1 (en) * 2016-07-08 2018-01-11 Cornell University Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same
US9991122B2 (en) * 2016-08-31 2018-06-05 Micron Technology, Inc. Methods of forming semiconductor device structures including two-dimensional material structures
US10121932B1 (en) * 2016-11-30 2018-11-06 The United States Of America As Represented By The Secretary Of The Navy Tunable graphene light-emitting device
CN107634089B (zh) * 2017-09-27 2019-11-19 中国科学院上海微系统与信息技术研究所 一种石墨烯-硒化铌超导异质结器件及其制备方法
CN109004016B (zh) * 2018-06-04 2021-08-17 国家纳米科学中心 非对称范德华异质结器件、其制备方法及用途
US11355393B2 (en) 2018-08-23 2022-06-07 Massachusetts Institute Of Technology Atomic precision control of wafer-scale two-dimensional materials
US11136666B2 (en) 2018-08-30 2021-10-05 University Of Kentucky Research Foundation Ordered nanotubes on a two-dimensional substrate consisting of different material properties
JP2021536700A (ja) * 2018-09-07 2021-12-27 グラフオーディオ・インコーポレイテッド 透明な静電式変換器
KR102250011B1 (ko) * 2018-10-18 2021-05-10 한양대학교 산학협력단 막 구조체, 소자 및 멀티레벨 소자
JP7196547B2 (ja) 2018-11-08 2022-12-27 富士通株式会社 光検出素子、光センサ、及び光検出素子の製造方法
CN109473522B (zh) * 2018-11-28 2020-07-07 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制备方法
US11152542B2 (en) * 2018-12-19 2021-10-19 Purdue Research Foundation Semiconductor device and method of making the same
KR102140775B1 (ko) * 2019-02-22 2020-08-04 재단법인 나노기반소프트일렉트로닉스연구단 그래핀 적층체, 그의 제조방법 및 그를 포함하는 유기전자소자
KR102239885B1 (ko) * 2019-03-29 2021-04-12 연세대학교 산학협력단 헤테로 구조의 적층 박막, 헤테로 구조의 적층 박막의 제조 방법 및 헤테로 구조의 적층 박막을 포함하는 반도체 소자
US10505063B1 (en) * 2019-05-24 2019-12-10 Mathew M. Zuckerman Graphene and hexagonal boron nitride van der waals heterostructured solar energy processing unit (SPU)
US20200373451A1 (en) * 2019-05-24 2020-11-26 Seven Z's Trust Graphene and hexagonal boron nitride van der waals heterostructured solar energy processing unit (SPU)
CN110429174B (zh) * 2019-08-14 2021-11-05 孙旭阳 石墨烯/掺杂二维层状材料范德瓦尔斯异质结超导复合结构、超导器件及其制备方法
CN113036043B (zh) * 2019-12-24 2022-05-27 Tcl科技集团股份有限公司 量子点发光二极管及其制备方法
US11908894B2 (en) 2020-04-10 2024-02-20 The Board Of Trustees Of The University Of Illinois Deformable electronic device and method of making a deformable electronic device
US11705200B2 (en) 2020-06-10 2023-07-18 National University of Singapore and Van der Waals heterostructure memory device and switching method
KR102319613B1 (ko) * 2020-09-04 2021-10-29 서울대학교산학협력단 2차원 물질을 이용한 페로브스카이트 유연 투명 태양전지
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US10692977B2 (en) 2020-06-23
KR102053240B1 (ko) 2019-12-09
EP3311410A1 (en) 2018-04-25
WO2016203184A1 (en) 2016-12-22
US20180158913A1 (en) 2018-06-07
JP2018519664A (ja) 2018-07-19
JP6637526B2 (ja) 2020-01-29
CN108064420A (zh) 2018-05-22
KR20190108199A (ko) 2019-09-23

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