PL442275A1 - Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem - Google Patents
Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobemInfo
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- PL442275A1 PL442275A1 PL442275A PL44227522A PL442275A1 PL 442275 A1 PL442275 A1 PL 442275A1 PL 442275 A PL442275 A PL 442275A PL 44227522 A PL44227522 A PL 44227522A PL 442275 A1 PL442275 A1 PL 442275A1
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- electron beam
- graphene substrate
- vapor deposition
- chemical vapor
- van der
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- 239000000758 substrate Substances 0.000 title abstract 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 4
- 229910021389 graphene Inorganic materials 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- 238000010894 electron beam technology Methods 0.000 title abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 title abstract 2
- 229910052723 transition metal Inorganic materials 0.000 abstract 2
- 150000003624 transition metals Chemical class 0.000 abstract 2
- 239000002356 single layer Substances 0.000 abstract 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02444—Carbon, e.g. diamond-like carbon
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract
Przedmiotem zgłoszenia jest przedstawiony na rysunku sposób wytwarzania heterostruktur van der Waalsa, bazujących na dichalkogenkach metali przejściowych selektywnie wzrastanych metodą chemicznego osadzania z fazy gazowej na podłożu grafenowym, w którym powierzchnię podłoża grafenowego naświetlano wiązką elektronową, po czym wzrost dichalkogenków metali przejściowych na obszarze naświetlonym wiązką elektronową sterowano ekspozycją naświetlonego podłoża na działanie powietrza. Przedmiotem zgłoszenia jest również heterostruktura wytworzona opisanym sposobem, charakteryzująca się tym, że na podłożu grafenowym wyhodowana została struktura dwuwymiarowa w formie monowarstwy.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL442275A PL442275A1 (pl) | 2022-09-14 | 2022-09-14 | Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem |
PCT/PL2023/050013 WO2024058678A1 (en) | 2022-09-14 | 2023-03-03 | Method of selective growth of van der waals heterostructures on a graphene substrate by chemical vapor deposition using electron-beam irradiation and a heterostructure manufactured by this method |
CN202380015022.2A CN118489151A (zh) | 2022-09-14 | 2023-03-03 | 使用电子束辐照通过化学气相沉积在石墨烯基底上选择性生长范德华异质结构的方法和通过该方法制造的异质结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL442275A PL442275A1 (pl) | 2022-09-14 | 2022-09-14 | Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem |
Publications (1)
Publication Number | Publication Date |
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PL442275A1 true PL442275A1 (pl) | 2024-03-18 |
Family
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Family Applications (1)
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PL442275A PL442275A1 (pl) | 2022-09-14 | 2022-09-14 | Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN118489151A (pl) |
PL (1) | PL442275A1 (pl) |
WO (1) | WO2024058678A1 (pl) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160308006A1 (en) * | 2015-04-16 | 2016-10-20 | Cornell University | Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same |
WO2018009931A1 (en) * | 2016-07-08 | 2018-01-11 | Cornell University | Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same |
CN108064420A (zh) * | 2015-06-18 | 2018-05-22 | 纳米2D材料有限公司 | 异质结及由其衍生的电子器件 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2828894A1 (en) * | 2012-03-22 | 2015-01-28 | The University Of Manchester | Photovoltaic cells |
US9640391B2 (en) * | 2015-06-23 | 2017-05-02 | The Trustees Of The Stevens Institute Of Technology | Direct and pre-patterned synthesis of two-dimensional heterostructures |
CN107634089B (zh) * | 2017-09-27 | 2019-11-19 | 中国科学院上海微系统与信息技术研究所 | 一种石墨烯-硒化铌超导异质结器件及其制备方法 |
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2022
- 2022-09-14 PL PL442275A patent/PL442275A1/pl unknown
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2023
- 2023-03-03 CN CN202380015022.2A patent/CN118489151A/zh active Pending
- 2023-03-03 WO PCT/PL2023/050013 patent/WO2024058678A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160308006A1 (en) * | 2015-04-16 | 2016-10-20 | Cornell University | Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same |
CN108064420A (zh) * | 2015-06-18 | 2018-05-22 | 纳米2D材料有限公司 | 异质结及由其衍生的电子器件 |
WO2018009931A1 (en) * | 2016-07-08 | 2018-01-11 | Cornell University | Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same |
Also Published As
Publication number | Publication date |
---|---|
CN118489151A (zh) | 2024-08-13 |
WO2024058678A1 (en) | 2024-03-21 |
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