PL442275A1 - Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem - Google Patents

Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem

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PL442275A1
PL442275A1 PL442275A PL44227522A PL442275A1 PL 442275 A1 PL442275 A1 PL 442275A1 PL 442275 A PL442275 A PL 442275A PL 44227522 A PL44227522 A PL 44227522A PL 442275 A1 PL442275 A1 PL 442275A1
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Poland
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electron beam
graphene substrate
vapor deposition
chemical vapor
van der
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PL442275A
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English (en)
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Jakub SITEK
Karolina CZERNIAK-ŁOSIEWICZ
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Politechnika Warszawska
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Priority to PL442275A priority Critical patent/PL442275A1/pl
Priority to PCT/PL2023/050013 priority patent/WO2024058678A1/en
Priority to CN202380015022.2A priority patent/CN118489151A/zh
Publication of PL442275A1 publication Critical patent/PL442275A1/pl

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Abstract

Przedmiotem zgłoszenia jest przedstawiony na rysunku sposób wytwarzania heterostruktur van der Waalsa, bazujących na dichalkogenkach metali przejściowych selektywnie wzrastanych metodą chemicznego osadzania z fazy gazowej na podłożu grafenowym, w którym powierzchnię podłoża grafenowego naświetlano wiązką elektronową, po czym wzrost dichalkogenków metali przejściowych na obszarze naświetlonym wiązką elektronową sterowano ekspozycją naświetlonego podłoża na działanie powietrza. Przedmiotem zgłoszenia jest również heterostruktura wytworzona opisanym sposobem, charakteryzująca się tym, że na podłożu grafenowym wyhodowana została struktura dwuwymiarowa w formie monowarstwy.
PL442275A 2022-09-14 2022-09-14 Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem PL442275A1 (pl)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PL442275A PL442275A1 (pl) 2022-09-14 2022-09-14 Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem
PCT/PL2023/050013 WO2024058678A1 (en) 2022-09-14 2023-03-03 Method of selective growth of van der waals heterostructures on a graphene substrate by chemical vapor deposition using electron-beam irradiation and a heterostructure manufactured by this method
CN202380015022.2A CN118489151A (zh) 2022-09-14 2023-03-03 使用电子束辐照通过化学气相沉积在石墨烯基底上选择性生长范德华异质结构的方法和通过该方法制造的异质结构

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PL442275A PL442275A1 (pl) 2022-09-14 2022-09-14 Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem

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PL442275A1 true PL442275A1 (pl) 2024-03-18

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PL442275A PL442275A1 (pl) 2022-09-14 2022-09-14 Sposób selektywnego wzrostu heterostruktur van der Waalsa na podłożu grafenowym metodą chemicznego osadzania z fazy gazowej z wykorzystaniem naświetlania wiązką elektronową oraz heterostruktura wytworzona tym sposobem

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160308006A1 (en) * 2015-04-16 2016-10-20 Cornell University Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same
WO2018009931A1 (en) * 2016-07-08 2018-01-11 Cornell University Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same
CN108064420A (zh) * 2015-06-18 2018-05-22 纳米2D材料有限公司 异质结及由其衍生的电子器件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2828894A1 (en) * 2012-03-22 2015-01-28 The University Of Manchester Photovoltaic cells
US9640391B2 (en) * 2015-06-23 2017-05-02 The Trustees Of The Stevens Institute Of Technology Direct and pre-patterned synthesis of two-dimensional heterostructures
CN107634089B (zh) * 2017-09-27 2019-11-19 中国科学院上海微系统与信息技术研究所 一种石墨烯-硒化铌超导异质结器件及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160308006A1 (en) * 2015-04-16 2016-10-20 Cornell University Monolayer films of semiconducting metal dichalcogenides, methods of making same, and uses of same
CN108064420A (zh) * 2015-06-18 2018-05-22 纳米2D材料有限公司 异质结及由其衍生的电子器件
WO2018009931A1 (en) * 2016-07-08 2018-01-11 Cornell University Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same

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WO2024058678A1 (en) 2024-03-21

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