CN108054272B - Low-cost manufacturing method capable of rapidly preparing large quantities of integrated miniature thin-film thermoelectric devices - Google Patents
Low-cost manufacturing method capable of rapidly preparing large quantities of integrated miniature thin-film thermoelectric devices Download PDFInfo
- Publication number
- CN108054272B CN108054272B CN201710756948.3A CN201710756948A CN108054272B CN 108054272 B CN108054272 B CN 108054272B CN 201710756948 A CN201710756948 A CN 201710756948A CN 108054272 B CN108054272 B CN 108054272B
- Authority
- CN
- China
- Prior art keywords
- type
- thermoelectric
- film
- photoresist
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Abstract
The invention discloses a low-cost manufacturing method capable of rapidly preparing an integrated miniature thin-film thermoelectric device in a large quantity, which utilizes a thick negative photoresist dry film with low price to replace SU-8 negative epoxy resin-based photoresist and other types of photoresists which are difficult to process and remove as templates; taking a conductive material with a smooth surface as a substrate; the low-energy low-cost exposure light source combines the photoresist dry film with the conductive material to sequentially manufacture micro-areas of the P-type thermoelectric legs and the N-type thermoelectric legs; sequentially and electrochemically depositing P-type and N-type thermoelectric leg arrays in the thermoelectric material micro-area; finally, removing the photoresist template, and transferring the thermoelectric leg array to the insulating substrate; and assembling and integrating the thermoelectric leg arrays, and finally preparing the integrated micro thin-film thermoelectric device in any shape such as a winding type, a spoke type, a multilayer stacking type and the like. The invention designs a method for realizing low-cost rapid mass preparation of integrated thin-film thermoelectric devices by using a photoresist dry film with low price and simple operation process as an electroplating template and combining an electrochemical deposition method.
Description
The technical field is as follows:
the invention relates to a manufacturing method capable of quickly preparing an integrated micro thin-film thermoelectric device in a large quantity at low cost, belonging to the field of processing and integration of thermoelectric transduction materials and micro energy devices.
Background art:
in recent years, with the demand for energy supply to microelectronic devices, and the fact that thermoelectric devices have no mechanical moving parts, no conduction electrons in solids, no vibration noise and long service life compared with other power generation and refrigeration devices, the thermoelectric devices have attracted extensive attention. Traditional thermoelectric refrigeration device is bulky, and thermoelectric leg often accomplishes through traditional machining processes such as casting, cutting, welding, and along with small-size electronic equipment for example wearable electronic equipment, application such as small-size sensor, the thermoelectric device that current machining prepared has not been able to satisfy the energy supply problem of the small-size electronic equipment that the integrated level is higher and higher, and the precision of its processing technology is more can not reach micron magnitude.
Since the power density of thermoelectric devices is inversely proportional to the size of the devices, micro thin film thermoelectric devices are gradually used to solve the energy problem of small electronic devices, and thus have attracted much attention. Compared with large equipment, the micro device has high integration density, can integrate a considerable number of thermocouples, can generate larger voltage under the condition of smaller temperature difference between two ends, and can be used for recycling low-grade heat sources in life, such as human body surface, geothermal heat and the like. As a new type of thermoelectric device, micro thermoelectric devices are widely used in the fields of power generation, refrigeration, sensors, and the like. However, the existing preparation method of the micro thin-film thermoelectric device is very expensive, time-consuming and complex, and often needs specific coating equipment. Such as magnetron sputtering, molecular beam epitaxy, chemical vapor deposition, and the like.
The thick film photoetching template is not influenced by thermoelectric materials, has high resolution, and the manufactured thermoelectric legs have smooth shapes, are not the second choice for preparing precise microelectronic devices, but have high manufacturing cost and complex process, and are not beneficial to the wide application of miniature thin film thermoelectric devices. SU-8 negative photoresists are widely used as lithographic templates in microelectronic device fabrication processes due to their thick film properties, and conventional micro-machining uses of SU-8 suffer from two major problems, one being thickness control and thickness uniformity. The film thickness is generally controlled by spin coating, but it is very difficult to perform in practice. And the processing steps of post-baking and hard-baking cause the thermoelectric leg shape to be damaged by the thermal expansion surface tension of the photoresist, thereby seriously reducing the output performance of the thermoelectric device.
Moreover, the exposure light source is expensive whether ultraviolet, electron beam or X-ray exposure equipment, and needs a special yellow light laboratory, and the process is too complex, which results in greatly increased manufacturing cost of the micro thermoelectric device and is not beneficial to the wide application of the micro thermoelectric device. Inorganic thermoelectric materials are brittle and easily broken due to cracks in a complicated process.
The patent provides a manufacturing method for rapidly preparing a large number of integrated miniature thin-film thermoelectric devices at low cost, can be used for manufacturing thin-film thermoelectric legs in any shapes, and is suitable for winding, spoke and laminated stacking.
The invention content is as follows:
the technical problem to be solved by the invention is as follows: the traditional mechanical processing method of the thermoelectric device is not suitable for the preparation of a miniature thin-film thermoelectric device and cannot reach the micron level, and the photoetching preparation process of the traditional thin-film thermoelectric device is too complex and expensive. Therefore, the manufacturing method which combines the advantages of high resolution of the photoetching template and low cost of electrochemical deposition and can rapidly manufacture the integrated micro thin-film thermoelectric device in large quantity at low cost is provided.
The technical scheme adopted by the invention is as follows: a low-cost manufacturing method for rapidly preparing a large number of integrated miniature thin-film thermoelectric devices comprises the following steps:
(1) taking a conductive material with a smooth surface as a substrate, and carrying out ultrasonic cleaning, oil removal, drying and single-side insulation treatment on the conductive material;
(2) heating and pressing the photoresist template to be attached to the conductive material;
(3) transferring the designed P-type and N-type thermoelectric array micro-areas to a photoresist template through exposure and development;
(4) putting the processed substrate and the photoresist template into 2-10% acid for soaking for 1-5min, activating, and electrochemically depositing P-type and N-type thermoelectric materials;
(5) removing the photoresist template, taking out the substrate and cleaning;
(6) repeating the steps 2-5 to manufacture P-type and N-type thermoelectric leg arrays;
(7) in the mould, the mould is matched with the required thermoelectric device shape, and polymer insulating material is poured and solidified;
(8) peeling off the conductive material, and transferring the micro thin-film thermoelectric device to the insulating substrate;
(9) cutting the prepared P-type and N-type thermoelectric leg arrays into required shapes;
(10) and integrating and packaging the micro thin-film thermoelectric device according to the shape and the integration mode of the required integrated micro thin-film thermoelectric device.
Further, the P-type and N-type thermoelectric legs are 10 μm or more in size.
Further, the photoresist template material is a dry film photoresist, and a light source required by exposure of the dry film photoresist is a low-energy ultraviolet light source of 200-450 nm.
Further, the conductive material is gold-plated silicon wafer, stainless steel, copper, ITO, FTO, copper-plated polyimide, or gold-plated polyimide.
Further, the polymer insulating material poured into the mold is used as an insulating substrate of the miniature thin-film thermoelectric device, and the material is PMMA, epoxy resin and polyethylene material with the curing temperature of RT-80 ℃.
Further, when the photoresist template is attached to the conductive material in the step (2), a hot roller mode is adopted, and the temperature is 60-120 ℃.
Further, the electrochemical deposition process employs pulsed voltage or pulsed current electrochemical deposition.
The invention has the following beneficial effects:
(1) the photoetching template provided by the invention adopts dry film photoresist instead of liquid photoresist such as SU-8 and the like. The required energy of the exposure light source does not need to be too high, and the energy can be met by a common ultraviolet lamp. The photoresist dry film has good cohesiveness and can be stuck on a substrate of any material and shape; the defects that the liquid photoresist is uneven in thickness and easy to have edge protrusions are overcome; the cost is low; the processing time is short, and the steps of glue homogenizing, curing and the like are omitted; the inner wall of the exposed template hole is nearly vertical, and the resolution is high; the production cost of the whole device preparation process is greatly reduced.
(2) The preparation process of the integrated micro thin-film thermoelectric device combines the advantages of the photoetching process and the electrochemical deposition, eliminates the requirements of expensive and complex exposure light sources of the photoetching process, simplifies the whole technological process of photoetching, and does not change the technological advantages of the photoetching process for preparing the micro thin-film thermoelectric device. The equipment combined with the electrochemical deposition process is simple, the deposition rate is high, the material performance can be controlled by electrochemical parameters, only the required part is deposited, and the advantages of almost no material waste, uniform deposition rate, smooth shape and the like are achieved.
(3) The invention also discloses a preparation process of the integrated thin film thermoelectric device. The design and the preparation of the thermoelectric legs with any shapes can be realized. The cost of the template is low compared with other types of templates, and the resolution can reach 10 mu m or more; the integrated thin film thermoelectric device can be prepared on substrates in any forms, including planar and curved substrates; the prepared integrated thin film thermoelectric device can adopt any integration modes such as a plane multilayer superposition type, a spoke multilayer superposition type, a winding type and the like; a large number of thermoelectric leg arrays can be integrated in a unit volume, so that the integrated micro thin-film thermoelectric device with high power output when a low-grade heat source supplies energy is realized.
(4) The manufacturing method which is low in cost and capable of rapidly preparing the integrated miniature thin-film thermoelectric device in large quantity can utilize the advantages of the photoetching template, realize the processing of the miniature thermoelectric device with micron scale which cannot be realized by the traditional machining process, avoid using a high-energy exposure light source, reduce the preparation cost and have wide application prospect.
Description of the drawings:
FIG. 1 is a simplified process flow diagram of the method of example 1 for the low cost, rapid mass production of integrated micro thin film thermoelectric devices.
FIG. 2 is a diagram of the N-type thermoelectric leg array mask used in the process flow exposure of example 1.
FIG. 3 is a diagram of a P-type thermoelectric leg array mask used in the process flow exposure of example 1.
Fig. 4 is a schematic view of a spoke-type layered stacked thin film thermoelectric device of example 2.
The specific implementation mode is as follows:
the invention will be further described with reference to the accompanying drawings.
The invention provides a low-cost manufacturing method capable of rapidly preparing a large number of integrated miniature thin-film thermoelectric devices, which utilizes a thick negative photoresist dry film with low price to replace SU-8 negative epoxy resin-based photoresist and other types of photoresists which are difficult to process and remove as templates; taking a conductive material with a smooth surface as a substrate; the low-energy low-cost exposure light source combines the photoresist dry film with the conductive material to sequentially manufacture micro-areas of the P-type thermoelectric legs and the N-type thermoelectric legs; sequentially and electrochemically depositing P-type and N-type thermoelectric leg arrays in the thermoelectric material micro-area; finally, removing the photoresist template, and transferring the thermoelectric leg array to the insulating substrate; and assembling the thermoelectric leg array to prepare the integrated micro thin-film thermoelectric device. The process flow comprises the following steps:
(1) conducting ultrasonic cleaning, oil removing, drying and single-side insulation treatment on the conductive material serving as the substrate;
(2) heating and pressurizing the photoresist template to be attached to the conductive substrate material;
(3) transferring the designed P-type and N-type thermoelectric array micro-areas to a photoresist template through exposure and development;
(4) putting the processed substrate and the photoresist template into 2-10% acid for soaking for 1-5min, activating, and electrochemically depositing P-type and N-type thermoelectric materials;
(5) removing the photoresist template, taking out the substrate and cleaning;
(6) repeating the steps 2-5 to manufacture P-type and N-type thermoelectric leg arrays;
(7) in the mould, the mould is matched with the required thermoelectric device shape, and polymer insulating material is poured and solidified;
(8) peeling off the conductive substrate material, and transferring the micro thin-film thermoelectric device onto the insulating substrate;
(9) cutting the prepared P-type and N-type thermoelectric leg arrays into required shapes;
(10) and integrating and packaging the micro thin-film thermoelectric device according to the shape and the integration mode of the required integrated micro thin-film thermoelectric device.
The lowest size precision of the P-type thermoelectric legs and the N-type thermoelectric legs in the manufacturing method of the invention is 10 mu m or more, and the manufacturing method of the invention can rapidly manufacture the integrated micro thin-film thermoelectric device in large quantity at low cost.
Wherein, the photoresist template material is a dry film photoresist, and the light source required by the exposure of the photoresist dry film is a low-energy ultraviolet light source of 200-450 nm.
The conductive substrate material is a gold-plated silicon wafer, stainless steel, copper, ITO, FTO, copper-plated polyimide, gold-plated polyimide and other conductive materials, and the surface of the conductive substrate material is smooth and not rough.
The thermoelectric material is bismuth telluride, antimony telluride, cobalt telluride, lead caesium telluride and doped inorganic semiconductor thermoelectric material thereof.
The polymer insulating material poured into the mold is used as an insulating substrate of the micro thin-film thermoelectric device, and the material is generally a polymer material with excellent electric insulating property, such as PMMA, epoxy resin, polyethylene and the like, and the curing temperature is RT-80 ℃.
Wherein, when the process flow (2) is attached to the photoresist template on the conductive substrate material, a hot roller mode is adopted, and the temperature is 60-120 ℃.
Wherein, the electrochemical deposition process adopts pulse voltage or pulse current electrochemical deposition.
The following two embodiments are provided to illustrate the fabrication method of the present invention for rapidly fabricating large-scale integrated micro thin-film thermoelectric devices at low cost.
Example 1:
the invention selects a stainless steel plate with the thickness of 200 mu m as a conductive substrate material, and selects Ordyl-50100 negative acrylic acid polymer-based dry film negative photoresist as an electroplating template to replace SU8 negative epoxy resin-based liquid photoresist. Ordyl-50100 was convenient to handle and simple to remove at the later stage. The preparation process comprises the following steps:
(1) ultrasonic cleaning, oil removing, drying and insulating treatment of single-sided adhesive tape pasting are carried out on a stainless steel plate which is a conductive substrate material;
(2) heating and pressurizing the photoresist dry film by adopting a laminator or equipment with a hot roller, wherein the pressure of the hot roller is 310Kpa, and the laminating speed is set to be 40cm min-1Setting the temperature of the equipment to be 100 ℃, so that the dry film is melted and is attached to the stainless steel plate of the conductive substrate material;
(3) printing a pre-designed required N-type (or P-type) thermoelectric leg, closely attaching the printed N-type (or P-type) thermoelectric leg to a photoresist dry film, and preparing for next exposure and development; exposing the photoresist dry film by using an ultraviolet lamp tube within the range of 300-450nm until the color of the photoresist dry film is obviously deepened; soaking the template by using 0.7-1.5% of carbonate at room temperature, and developing; then transferring the designed N-type (or P-type) thermoelectric array micro-area to a photoresist template;
(4) and (3) putting the treated substrate and the photoresist template into 2-10% acid for soaking for 1-5min, and activating. Electrochemically depositing an N-type (or P-type) thermoelectric material;
(5) soaking the substrate for 3-5min by using the special release agent (10-15% of sodium carbonate/40-50% of sodium hydroxide/20-25% of sodium silicate) for the dry film photoresist, removing the photoresist template, taking out the substrate, and washing with deionized water;
(6) repeating the steps 2-5 to manufacture a P-type (or N-type) thermoelectric leg array;
(7) in the mould, the mould is matched with the required thermoelectric device shape, the polymer insulating material is poured, the epoxy resin AB glue is selected, and the room temperature curing is carried out;
(8) peeling off the stainless steel plate serving as the conductive substrate material, and transferring the micro thermoelectric device to the epoxy resin film serving as the insulating substrate;
(9) cutting the prepared P-type (or N-type) thermoelectric leg array into a required shape;
(10) stacking the layers, connecting the layers in series to obtain a layered stacked integrated micro thin-film thermoelectric device, and packaging;
(11) and (4) winding the single layer to obtain the wound integrated micro thin film thermoelectric device, and then packaging.
Example 2:
different from the embodiment 1, the invention selects a polyimide film with the thickness of 20 microns, electroless copper plating is carried out on the polyimide film as a conductive substrate material, and a DFP acrylate dry film negative photoresist is selected as an electroplating template to replace SU8 negative epoxy resin-based liquid photoresist. The preparation process comprises the following steps:
(1) preparing a chemical copper plating solution, carrying out chemical copper plating on the polyimide film, carrying out ultrasonic cleaning on a copper plated polyimide base material, removing oil and drying;
(2) heating and pressurizing the photoresist dry film by using a coupled wheel type laminator or other hot roller equipment, wherein the pressure of the hot roller is 250Kpa, and the laminating speed is set to be 20cm min-1The equipment temperature is set to be 50 ℃, so that the dry film is melted and is pasted on one side of the copper-plated polyimide, and bubbles are easy to appear due to the flexibility of the polyimide, so a hard metal sheet is required to scrape the surface of the dry film before a hot roller to remove the bubbles;
(3) this procedure is the same as in example 1, except that the design template of the thermoelectric legs is changed to a spoke shape, and the thermoelectric legs are rectangular;
(4) and putting the treated substrate and the template into 5% nitric acid for soaking for 1-5min, activating, and electrochemically depositing the P-type (or N-type) thermoelectric material.
(5) The special release agent for the dry film photoresist is adopted to soak the substrate for 3-5min, the photoresist template is removed, and the substrate is taken out and washed by deionized water.
(6) Repeating the steps 2-5 to manufacture the P-type (or N-type) thermoelectric array.
(7) Pouring a polymer insulating material into a mould, selecting PMMA (polymethyl methacrylate) which is different from the embodiment 1, adding a curing agent, and curing at room temperature;
(8) slowly stripping the polyimide, dissolving and removing the redundant copper by adopting a sodium persulfate solution, and transferring the micro thermoelectric device to the PMMA film serving as the insulating substrate;
(9) cutting the prepared P-type (or N-type) thermoelectric leg array into a required shape;
(10) and (3) alternately stacking the layers, alternately connecting the layer A and the layer B in series, punching the layers, and alternately connecting the N-type thermoelectric legs and the P-type thermoelectric legs to obtain the layered stacked spoke type micro thin film thermoelectric device, and then packaging.
The foregoing is only a preferred embodiment of this invention and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the invention and these modifications should also be considered as the protection scope of the invention.
Claims (5)
1. A low-cost manufacturing method capable of rapidly preparing a large number of integrated micro thin-film thermoelectric devices is characterized in that: the method comprises the following steps:
(1) taking a conductive material with a smooth surface as a substrate, and carrying out ultrasonic cleaning, oil removal, drying and single-side insulation treatment on the conductive material;
(2) heating and pressing a negative photoresist template to be attached to the conductive material;
(3) printing the designed N-type and/or P-type thermoelectric legs, and tightly attaching the N-type and/or P-type thermoelectric legs to the photoresist dry film;
(4) transferring the designed P-type and N-type thermoelectric array micro-areas to a photoresist template through exposure and development;
(5) putting the processed substrate and the photoresist template into 2-10% acid for soaking for 1-5min, activating, and electrochemically depositing P-type and N-type thermoelectric materials;
(6) removing the photoresist template, taking out the substrate and cleaning;
(7) repeating the steps 2-5 to manufacture P-type and N-type thermoelectric leg arrays;
(8) in the mould, the mould is matched with the required thermoelectric device shape, and polymer insulating material is poured and solidified;
(9) peeling off the conductive material, and transferring the micro thin-film thermoelectric device to the insulating substrate;
(10) cutting the prepared P-type and N-type thermoelectric leg arrays into required shapes;
(11) integrating and packaging the micro thin-film thermoelectric device according to the shape and the integration mode of the required integrated micro thin-film thermoelectric device;
the polymer insulating material poured into the mould is used as an insulating substrate of the miniature thin-film thermoelectric device, and the material is PMMA, epoxy resin and polyethylene material with the curing temperature of RT-80 ℃;
and (3) when the photoresist template is attached to the conductive material in the step (2), adopting a hot roller mode, wherein the temperature is 60-120 ℃.
2. A low-cost method of fabricating integrated micro thin-film thermoelectric devices in large quantities and at high speed as claimed in claim 1, wherein: the P-type and N-type thermoelectric legs are 10 μm or more in size.
3. A low-cost method of fabricating integrated micro thin-film thermoelectric devices in large quantities and at high speed as claimed in claim 1, wherein: the photoresist template material is dry film photoresist, and the light source required by exposure of the dry film photoresist is 200-450nm low-energy ultraviolet light source.
4. A low-cost method of fabricating integrated micro thin-film thermoelectric devices in large quantities and at high speed as claimed in claim 1, wherein: the conductive material is gold-plated silicon wafer, stainless steel, copper, ITO, FTO, copper-plated polyimide and gold-plated polyimide.
5. A low-cost method of fabricating integrated micro thin-film thermoelectric devices in large quantities and at high speed as claimed in claim 1, wherein: the electrochemical deposition process adopts pulse voltage or pulse current electrochemical deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710756948.3A CN108054272B (en) | 2017-08-29 | 2017-08-29 | Low-cost manufacturing method capable of rapidly preparing large quantities of integrated miniature thin-film thermoelectric devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710756948.3A CN108054272B (en) | 2017-08-29 | 2017-08-29 | Low-cost manufacturing method capable of rapidly preparing large quantities of integrated miniature thin-film thermoelectric devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108054272A CN108054272A (en) | 2018-05-18 |
| CN108054272B true CN108054272B (en) | 2021-02-19 |
Family
ID=62119313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710756948.3A Active CN108054272B (en) | 2017-08-29 | 2017-08-29 | Low-cost manufacturing method capable of rapidly preparing large quantities of integrated miniature thin-film thermoelectric devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108054272B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545951B (en) * | 2018-11-16 | 2023-02-03 | 清华大学深圳研究生院 | Organic thermoelectric device template, preparation method thereof and thermoelectric device |
| CN109674094A (en) * | 2019-01-26 | 2019-04-26 | 深圳市合元科技有限公司 | Electronic smoke atomizer and electronic cigarette, atomizing component preparation method |
| CN112420912B (en) * | 2020-11-20 | 2022-07-08 | 武汉理工大学 | Manufacturing method of micro thermoelectric device |
| CN112563129A (en) * | 2020-12-11 | 2021-03-26 | 苏州工业园区纳米产业技术研究院有限公司 | Metal stripping process for silicon wafer with high-step structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1460069A (en) * | 2000-10-12 | 2003-12-03 | 阿梅代奥·坎多雷 | Heat lamination of dry photoresist film onto board for printed circuit |
| CN1672471A (en) * | 2002-06-27 | 2005-09-21 | Ppg工业俄亥俄公司 | Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions |
| CN1672474A (en) * | 2002-06-27 | 2005-09-21 | Ppg工业俄亥俄公司 | Process for creating holes of circuit assembly |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832332A (en) * | 2012-06-15 | 2012-12-19 | 江苏物联网研究发展中心 | Flexible micro thermoelectric generator and manufacturing method thereof |
| CN103178754B (en) * | 2013-03-19 | 2015-07-08 | 浙江大学 | Flexible temperature differential power generation micro-unit structure |
| CN105355773B (en) * | 2015-11-11 | 2018-02-13 | 中国科学院上海微系统与信息技术研究所 | A kind of thermoelectric energy collector and preparation method thereof |
-
2017
- 2017-08-29 CN CN201710756948.3A patent/CN108054272B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1460069A (en) * | 2000-10-12 | 2003-12-03 | 阿梅代奥·坎多雷 | Heat lamination of dry photoresist film onto board for printed circuit |
| CN1672471A (en) * | 2002-06-27 | 2005-09-21 | Ppg工业俄亥俄公司 | Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions |
| CN1672474A (en) * | 2002-06-27 | 2005-09-21 | Ppg工业俄亥俄公司 | Process for creating holes of circuit assembly |
Non-Patent Citations (1)
| Title |
|---|
| GEM膜研制进展;李笑梅等;《中国原子能科学研究院年报》;20121231;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108054272A (en) | 2018-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108054272B (en) | Low-cost manufacturing method capable of rapidly preparing large quantities of integrated miniature thin-film thermoelectric devices | |
| KR101931831B1 (en) | Graphene film transfer method, and method for manufacturing transparent conductive film | |
| EP2294636B1 (en) | A method for manufacturing a thermoelectric generator, a wearable thermoelectric generator and a garment comprising the same | |
| CN100481590C (en) | Flexible fuel cell | |
| US10879595B2 (en) | Tools and methods for producing nanoantenna electronic devices | |
| KR20170021297A (en) | Method for the fabrication and transfer of graphene | |
| CN102243435B (en) | Method for preparing micro-nanometer fluid system through compound developing of positive and negative photoresists | |
| CN108615700A (en) | A kind of organic bonding shifting process method of slim solar cell rigid-flexible substrate | |
| CN111446358B (en) | High-precision rapid thin-film thermoelectric device based on pulse laser ablation and preparation method thereof | |
| CN108871026A (en) | A kind of ultrathin heat pipe capillary structure and preparation method thereof | |
| CN112951486A (en) | Embedded polymer/metal grid flexible transparent electrode and preparation method and application thereof | |
| CN109427917A (en) | A kind of heterojunction solar battery method for making its electrode | |
| JP5460897B1 (en) | Method for manufacturing an electrode of a flat heating element | |
| CN103117241A (en) | Coating method in physical etching technology | |
| CN109179312B (en) | A kind of preparation method of pattern metal film | |
| CN107934906A (en) | A kind of MEMS actuator based on fexible film and preparation method thereof | |
| Zhang et al. | Argon plasma modification of SU-8 for very high aspect ratio and dense copper electroforming | |
| CN107177866B (en) | The method of micro- radio frequency T shape power splitter is prepared in metallic substrates | |
| CN117479809B (en) | Flexible Y-shaped micro thermoelectric device and preparation method thereof | |
| CN113380949B (en) | Method for preparing transient electronic device | |
| WO2018103103A1 (en) | Ultralight-structure solar cell prepared on the basis of 3d printing technology | |
| US20120097971A1 (en) | Contiguous and virtually contiguous area expansion of semiconductor substrates | |
| Apaydin et al. | Patterned metal printing on pliable composites for RF design | |
| CN117687265A (en) | Method for preparing thin film micro device on special-shaped structure | |
| CN115483329A (en) | Mini LED COG circuit structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |