CN117687265A - Method for preparing thin film micro device on special-shaped structure - Google Patents
Method for preparing thin film micro device on special-shaped structure Download PDFInfo
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- CN117687265A CN117687265A CN202311778659.5A CN202311778659A CN117687265A CN 117687265 A CN117687265 A CN 117687265A CN 202311778659 A CN202311778659 A CN 202311778659A CN 117687265 A CN117687265 A CN 117687265A
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- 238000000034 method Methods 0.000 title claims abstract description 72
- 239000010409 thin film Substances 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 59
- 239000010410 layer Substances 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 38
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 230000005489 elastic deformation Effects 0.000 claims description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 6
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 6
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract description 12
- 230000010354 integration Effects 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a method for preparing a micro device on a special-shaped structure, which comprises the following steps: pasting dry film photoresist on the special-shaped structure; fixing the first flexible mask plate on the special-shaped structure; photoetching and developing the special-shaped structure; and depositing a first material layer on the special-shaped structure, and then stripping the dry film to form a first material layer pattern. The invention directly sticks the dry film on the surface of the special-shaped structure, and uses the flexible mask to replace the traditional hard mask made of metal materials, thereby being capable of manufacturing a fine pattern structure on the surface of the special-shaped structure. In addition, the invention provides a method for realizing the fine patterning and the overlay of the multilayer film on the surface of the special-shaped structure, which provides a technical approach for realizing the integration of various sensors in situ in a limited space on the special-shaped component, and the application of the method is continuously embodied in a plurality of aspects.
Description
Technical Field
The present invention relates generally to the field of micromachining technology. In particular, the present invention relates to a method of fabricating thin film micro devices on profiled structures.
Background
MEMS micromachining technology originates from semiconductor and microelectronic processes and uses photolithography, epitaxy, thin film deposition, oxidation, diffusion, implantation, sputtering, evaporation, etching, dicing, packaging, etc. as basic process steps to fabricate complex three-dimensional features. However, because the standard MEMS/I C process only allows for micro-structure fabrication on a flat panel, MEMS/I C components can only be placed on a flat panel chip, which has been quite mature for many years of technological development. The patterning process on the curved surface is studied to a certain extent, but still stays in the situation that the low reliability cannot be produced in mass.
Chinese patent CN 105259733A discloses a method for preparing a flexible mask for curved surface patterning. In the scheme, a N i metal film with the same appearance as a curved surface is formed on a curved surface substrate through an electroplating process, the N i metal film is released through ultrasonic, then the N i metal film with certain deformability is fixed on glass, patterning of the N i metal film is realized through photoetching and etching processes, the patterned N i metal film is attached on the curved surface substrate to serve as a metal mask, and metal patterns are sputtered.
Such curved surface patterning process requires the fabrication of a metal hard mask, and is complicated. In addition, when sputtering is performed by using a metal hard mask, the fineness of the pattern on the curved surface cannot be improved due to factors such as high temperature and deformation, and the metal hard mask is difficult to repeatedly use for many times, so that the metal hard mask is suitable for being used as a single-layer film pattern, but how to align the more difficult curved surface multi-layer film patterns is not involved.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a method for preparing a thin film micro device by thin film patterning on a special-shaped structure, which can realize fine patterning of a plurality of layers of thin films on the surface of the special-shaped structure and provides a foundation for realizing integration of multiple sensors in a limited space on a special-shaped component.
The invention provides a method for preparing a micro device on a special-shaped structure, which comprises the following steps:
pasting dry film photoresist on the special-shaped structure;
fixing the first flexible mask plate on the special-shaped structure;
photoetching and developing the special-shaped structure; and
and depositing a first material layer on the special-shaped structure, and stripping the dry film to form a first material layer pattern.
In one embodiment of the present invention, the method includes performing a pretreatment process on a curved substrate before applying a dry film photoresist, the pretreatment process including: polishing, grinding and cleaning.
In one embodiment of the invention, the first flexible mask plate is fixed on the special-shaped structure through an adhesive layer so as to ensure that the first flexible mask plate is tightly contacted with the special-shaped structure.
In one embodiment of the invention, the first material layer is deposited by a physical vapor deposition process, and then the profiled structure is immersed in a 1% naoh solution, thereby removing the dry film and the first material layer on its surface, leaving only the first material layer pattern directly deposited on the profiled structure surface.
In one embodiment of the invention, the method comprises:
pasting dry film photoresist on the special-shaped structure with the first material layer pattern;
fixing the second flexible mask plate on the special-shaped structure;
photoetching and developing the special-shaped structure; and
and depositing a second material layer on the special-shaped structure, and stripping the dry film to form a second material layer pattern.
In one embodiment of the invention, the pattern of the profiled structure is aligned with the pattern on the second flexible mask plate under a yellow microscope by means of a special fixture,
the special fixture comprises a displacement table, a workpiece fixture fixed on the displacement table and a mask plate bracket positioned above the workpiece fixture,
in the alignment process, the special-shaped structure is fixed on the workpiece clamp, the second flexible mask plate is fixed on the mask plate support, and the displacement table drives the special-shaped structure to displace, so that the alignment of the patterns on the special-shaped structure and the patterns on the second flexible mask plate is realized.
In one embodiment of the invention, the material of the first and/or second flexible mask comprises: PET, PP, PC, PVC, PDMS.
In one embodiment of the invention, when the surface relief of the special-shaped structure exceeds the application range of the first and/or second flexible mask plates, so that the first and/or second flexible mask plates cannot be in close contact with the special-shaped structure through elastic deformation, the projection of light rays passing through the mask plates is made into an expected shape by finely adjusting the shading pattern of the flexible mask plates according to actual needs.
In one embodiment of the invention, dry film photoresist is only pasted on part of the surface of the special-shaped structure; and/or
The auxiliary film is pressed by a roller, and then the auxiliary film is put into an oven to remove redundant bubbles.
In one embodiment of the invention, the first material layer and/or the second material layer comprises a metal layer, a ceramic layer.
The invention uses the flexible mask to replace the traditional hard mask, combines dry film lithography, can manufacture a fine pattern structure on the surface of the curved surface, can realize the patterning of the curved surface, has the advantages of repeated use of the flexible mask, low cost and flexible and convenient operation.
Compared with the prior art, the invention has the beneficial effects that:
1. photolithography can be performed on a substrate having a complex curved surface to achieve patterning of complex devices. The usual I C/MEMS device process is performed in a planar fashion. The invention realizes the transfer of the pattern on the curved surface by using dry film photoetching and a flexible mask plate to repeatedly print.
2. And (3) attaching a dry film, attaching the dry film on the substrate by using a flexible mask, exposing and developing to directly pattern. The flexible mask can be closely attached to the curved substrate and maintained in a shape with a consistent curvature of the curved substrate. Therefore, the process can realize the high-fidelity graphic transfer of the photoetching graph on the curved surface.
3. The simple and convenient process steps of exposure, development and sputtering are adopted, so that the preparation flow of preparing the micro device on the curved substrate is greatly reduced, and the cost is reduced.
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications could be made by those skilled in the art without departing from the inventive concept. These are all within the scope of the present invention.
Drawings
To further clarify the advantages and features present in various embodiments of the present invention, a more particular description of various embodiments of the present invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, for clarity, the same or corresponding parts will be designated by the same or similar reference numerals.
FIG. 1 illustrates a process cross-sectional view of a sensor structure for depositing a thermistor wire on an insulating curved surface in accordance with one embodiment of the invention.
FIG. 2 illustrates a process flow diagram for depositing a thermistor wire sensor structure on an insulating curved surface in accordance with one embodiment of the invention.
Fig. 3 illustrates a process cross-sectional view of a multi-layer overprinting of a thermal flow sensor structure on an insulating curved substrate according to another embodiment of the invention.
Fig. 4 shows a process flow diagram of a multi-layer overprinting of a thermal flow sensor structure on an insulating curved substrate according to another embodiment of the invention.
Fig. 5 illustrates a special fixture for alignment of a profiled structure with a flexible mask plate according to one embodiment of the invention.
Detailed Description
It should be noted that the components in the figures may be shown exaggerated for illustrative purposes and are not necessarily to scale. In the drawings, identical or functionally identical components are provided with the same reference numerals.
In the present invention, unless specifically indicated otherwise, "disposed on …", "disposed over …" and "disposed over …" do not preclude the presence of an intermediate therebetween. Furthermore, "disposed on or above" … merely indicates the relative positional relationship between the two components, but may also be converted to "disposed under or below" …, and vice versa, under certain circumstances, such as after reversing the product direction.
In the present invention, the embodiments are merely intended to illustrate the scheme of the present invention, and should not be construed as limiting.
In the present invention, the adjectives "a" and "an" do not exclude a scenario of a plurality of elements, unless specifically indicated.
It should also be noted herein that in embodiments of the present invention, only a portion of the components or assemblies may be shown for clarity and simplicity, but those of ordinary skill in the art will appreciate that the components or assemblies may be added as needed for a particular scenario under the teachings of the present invention. In addition, features of different embodiments of the invention may be combined with each other, unless otherwise specified. For example, a feature of the second embodiment may be substituted for a corresponding feature of the first embodiment, or may have the same or similar function, and the resulting embodiment would fall within the disclosure or scope of the disclosure.
It should also be noted herein that, within the scope of the present invention, the terms "identical", "equal" and the like do not mean that the two values are absolutely equal, but rather allow for some reasonable error, that is, the terms also encompass "substantially identical", "substantially equal". By analogy, in the present invention, the term "perpendicular", "parallel" and the like in the table direction also covers the meaning of "substantially perpendicular", "substantially parallel".
The numbers of the steps of the respective methods of the present invention are not limited to the order of execution of the steps of the methods. The method steps may be performed in a different order unless otherwise indicated.
The invention is further elucidated below in connection with the embodiments with reference to the drawings.
The invention provides a method for preparing a micro device on a special-shaped structure through film patterning, which has excellent performances. The invention uses the flexible mask to replace the traditional hard mask, can manufacture a fine pattern structure on the surface of the curved surface, can realize the patterning of the curved surface, and has the advantages of repeated use, low cost and flexible and convenient operation.
In embodiments of the invention, the profiled structure refers to a non-planar structure. For example, the profiled structure may include spheres, cylinders, cones, fold lines, and the like. In the present description, the profiled structure may also be referred to as a curved substrate.
The curved substrate may be subjected to a pretreatment process prior to film patterning. The pretreatment process may include: polishing, grinding, cleaning and the like. For example, the surface of the workpiece is firstly subjected to rough polishing treatment, the greasy dirt on the surface is removed by using an acetone solvent, and the surface is cleaned by using electrochemical degreasing and ultrasonic cleaning means.
FIG. 1 illustrates a process cross-sectional view of a sensor structure for depositing a thermistor wire on an insulating curved surface in accordance with one embodiment of the invention. FIG. 2 illustrates a process flow diagram for depositing a thermistor wire sensor structure on an insulating curved surface in accordance with one embodiment of the invention.
First, in step 201, a film-sticking process is performed on a curved substrate. Before film sticking, the curved substrate is ensured to be cleaned, and air bubbles are avoided during film sticking. And (5) after film pasting, putting the film into a baking oven for baking, and removing redundant bubbles. In some embodiments of the invention, the film may be applied only to the parts where the device is to be fabricated, and not to other parts. In other embodiments of the present invention, a film may be applied over the entire surface of the curved substrate.
Next, in step 202, the flexible mask is fixed on the curved substrate. The flexible mask plate is a flexible plate with certain elastic deformation capability and shading patterns. In the embodiment of the invention, the flexible mask plate can be fixed on the curved substrate by using the bonding layer, so that the flexible mask plate is ensured to be in close contact with the curved substrate, and light leakage in the photoetching process is prevented. For example, the materials of the flexible mask include: PET, PP, PC, PVC, PDMS. And fixing the flexible mask plate on the curved surface substrate through polyimide adhesive tape.
In step 203, the curved substrate is subjected to photolithography and development.
In step 204, a metal layer is deposited on the curved substrate, and then the dry film is stripped to form a metal pattern. In embodiments of the present invention, depositing the metal layer may be accomplished by a physical vapor deposition process such as sputtering. Then, the curved substrate is soaked in a 1% naoh solution, thereby removing the dry film and the metal layer on the surface thereof, leaving only the metal pattern directly deposited on the substrate surface.
The flexible film is utilized to carry out curved surface deposition, the process flow is short, the subsequent process is simple, the repeatability is good, and the cost is low.
Fig. 3 illustrates a process cross-sectional view of a multi-layer overprinting of a thermal flow sensor structure on an insulating curved substrate according to another embodiment of the invention. Fig. 4 shows a process flow diagram of a multi-layer overprinting of a thermal flow sensor structure on an insulating curved substrate according to another embodiment of the invention.
First, in step 401, a film-sticking process is performed on a curved substrate. Before film sticking, the curved substrate is ensured to be cleaned, and air bubbles are avoided during film sticking. And (5) after film pasting, putting the film into a baking oven for baking, and removing redundant bubbles. In some embodiments of the invention, the film may be applied only to the parts where the device is to be fabricated, and not to other parts. In other embodiments of the present invention, a film may be applied over the entire surface of the curved substrate.
Next, in step 402, a first flexible mask is secured to a curved substrate. The first flexible mask plate is a flexible plate with certain elastic deformation capability and shading patterns. In the embodiment of the invention, the first flexible mask plate can be fixed on the curved substrate by using the polyimide adhesive tape, so that the flexible mask plate is tightly contacted with the curved substrate, and light leakage in the photoetching process is prevented. The material of the first flexible mask plate comprises: PET, PP, PC, PVC, PDMS.
In step 403, the curved substrate is subjected to photolithography and development.
In step 404, a first metal layer is deposited on the curved substrate, and then the dry film is stripped to form a first metal pattern. In embodiments of the present invention, depositing the first metal layer may be accomplished by a physical vapor deposition process such as sputtering. Then, the curved substrate is soaked in a 1% naoh solution, thereby removing the dry film and the metal layer on the surface thereof, leaving only the first metal pattern directly deposited on the surface of the substrate.
And then, manufacturing a second metal pattern on the curved substrate with the first metal pattern. The fabrication process of the second metal pattern is similar to the fabrication process of the first metal pattern. The difficulty is that the second reticle needs to be aligned with the first metal pattern when the second metal pattern is being fabricated. Because the curve substrate is not a semiconductor substrate with standard size and shape, and the flexible mask used is not a standard mask, the existing lithography equipment cannot be used for mask alignment, lithography and other processes. In view of this, in the prior art, only a single layer pattern can be formed on a special structure, and the production of multiple layers of fine patterns cannot be realized. Aiming at the difficult problem, the invention provides a special fixture which is used for aligning and fixing a special structure and a flexible mask plate.
Fig. 5 illustrates a special fixture for alignment of a profiled structure with a flexible mask plate according to one embodiment of the invention. As shown in fig. 5, the special fixture includes a displacement table 501, a workpiece fixture 502 fixed on the displacement table 501, and a mask plate bracket 503 located above the workpiece fixture 502. In the alignment process, the special-shaped structure workpiece is fixed on the workpiece clamp 502, the flexible mask plate is fixed on the mask plate bracket 503, and the displacement table 501 can move up, down, front, back, left, right, rotate and the like, so that the special-shaped structure workpiece is driven to displace, and the alignment of the graph on the special-shaped structure workpiece and the graph on the flexible mask plate is realized.
The special fixture of the invention can realize the alignment of the graph on the special-shaped structure workpiece and the graph on the flexible mask plate, specifically, the process flow shown in fig. 3 and 4 is returned, and in step 405, the film pasting process is performed on the curved substrate. Step 405 is similar to step 401. The film pasting process should be careful to avoid bubble generation. And after film pasting, putting the film into a baking oven to remove redundant bubbles.
In step 406, a second flexible mask is aligned with the curved substrate under a yellow microscope by a special fixture and then secured thereto. The second flexible mask plate is a flexible plate with certain elastic deformation capability and shading patterns. In the embodiment of the invention, the second flexible mask plate can be fixed on the curved substrate by using the polyimide adhesive tape, so that the flexible mask plate is tightly contacted with the curved substrate, and light leakage in the photoetching process is prevented. The material of the second flexible mask plate comprises: PET, PP, PC, PVC, PDMS.
Then, the curved substrate is subjected to photoetching and development.
In step 407, a second metal layer is deposited on the curved substrate, and then the dry film is stripped to form a second metal pattern. In embodiments of the present invention, depositing the second metal layer may be accomplished by a physical vapor deposition process such as sputtering. Then, the curved substrate is soaked in a 1% naoh solution, thereby removing the dry film and the metal layer on the surface thereof, leaving only the second metal pattern directly deposited on the surface of the substrate. The material of the second metal layer may be the same as or different from the material of the first metal layer.
In an embodiment of the present invention, steps 405 to 407 may be repeated a plurality of times, thereby forming a multi-layered metal layer pattern.
Next, in step 408, a film-attaching process is performed on the curved substrate. Step 408 is similar to step 401. The film pasting process should be careful to avoid bubble generation. And after film pasting, putting the film into a baking oven to remove redundant bubbles.
In step 409, a third flexible mask is aligned with the curved substrate under a yellow microscope by a special fixture and then secured thereto. The third flexible mask plate is a flexible plate with certain elastic deformation capability and shading patterns. In the embodiment of the invention, the third flexible mask plate can be fixed on the curved substrate by using the polyimide adhesive tape, so that the flexible mask plate is tightly contacted with the curved substrate, and light leakage in the photoetching process is prevented. The material of the third flexible mask plate comprises: PET, PP, PC, PVC, PDMS.
Then, the curved substrate is subjected to photoetching and development.
In step 410, a first thermal resistance layer is deposited on a curved substrate, and then the dry film is stripped to form a first thermal resistance layer pattern. In embodiments of the present invention, depositing the first thermal resistance layer may be accomplished by a physical vapor deposition process such as sputtering. Then, the curved substrate is soaked in a 1% naoh solution, thereby removing the dry film and the first thermal resistance layer on the surface thereof, leaving only the first thermal resistance layer pattern directly deposited on the substrate surface. The material of the thermal resistance layer may be ceramic.
In an embodiment of the present invention, steps 408 through 410 may be repeated multiple times to form a multi-layered thermal resistance layer pattern.
In some embodiments of the present invention, when the surface of the curved substrate fluctuates beyond the application range of the flexible mask, so that the flexible mask cannot achieve close contact with the curved substrate through elastic deformation, the light shielding pattern of the flexible mask can be finely adjusted according to actual needs, so that the projection of light passing through the mask is in an expected shape. In this case, when the mask is fixed to the surface of the curved surface, it is necessary to perform alignment of the mask with the curved surface substrate.
It should be noted that the foregoing embodiments are merely specific embodiments of the present invention, and the shape and size of the substrate, and the kind of the material layer on the curved surface to be deposited may be changed, for example, the deposited material may be metal, ceramic, etc., and the object of the present invention may be achieved not only by the description of the foregoing examples.
The invention directly sticks the dry film on the surface of the special-shaped structure, and uses the flexible mask to replace the traditional hard mask made of metal materials, thereby being capable of manufacturing a fine pattern structure on the surface of the special-shaped structure. In addition, the invention has low cost and flexible and convenient operation; its application is continually embodied in many aspects.
While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to those skilled in the relevant art that various combinations, modifications, and variations can be made therein without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention as disclosed herein should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
Claims (10)
1. A method of fabricating a thin film micro-device on a profiled structure, comprising:
pasting dry film photoresist on the special-shaped structure;
fixing the first flexible mask plate on the special-shaped structure;
photoetching and developing the special-shaped structure; and
and depositing a first material layer on the special-shaped structure, and stripping the dry film to form a first material layer pattern.
2. The method of claim 1, further comprising performing a pretreatment process on the curved substrate prior to applying the dry film photoresist, the pretreatment process comprising: polishing, grinding and cleaning.
3. The method of claim 1, wherein the first flexible mask is secured to the profiled structure by an adhesive layer to ensure intimate contact of the first flexible mask with the profiled structure.
4. The method of claim 1, wherein the first material layer is deposited by a physical vapor deposition process, and then the profiled structure is immersed in a 1% naoh solution, thereby removing the dry film and the first material layer on the surface thereof, leaving only the first material layer pattern directly deposited on the surface of the profiled structure.
5. The method as recited in claim 1, further comprising:
pasting dry film photoresist on the special-shaped structure with the first material layer pattern;
fixing the second flexible mask plate on the special-shaped structure;
photoetching and developing the special-shaped structure; and
and depositing a second material layer on the special-shaped structure, and stripping the dry film to form a second material layer pattern.
6. The method of claim 5, wherein the pattern of the profiled structure is aligned with the pattern on the second flexible mask plate under a yellow microscope by a special fixture,
the special fixture comprises a displacement table, a workpiece fixture fixed on the displacement table and a mask plate bracket positioned above the workpiece fixture,
in the alignment process, the special-shaped structure is fixed on the workpiece clamp, the second flexible mask plate is fixed on the mask plate support, and the displacement table drives the special-shaped structure to displace, so that the alignment of the patterns on the special-shaped structure and the patterns on the second flexible mask plate is realized.
7. The method of claim 1 or 5, wherein the material of the first and/or second flexible mask comprises one or more of PET, PP, PC, PVC, PDMS.
8. The method according to claim 1 or 5, wherein when the surface relief of the special-shaped structure exceeds the application range of the first and/or second flexible mask plates, so that the first and/or second flexible mask plates cannot achieve close contact with the special-shaped structure through elastic deformation, the light shielding pattern of the flexible mask plates is finely adjusted according to actual needs, so that the projection of light rays passing through the mask plates becomes a desired shape.
9. The method of claim 1, wherein a dry film photoresist is applied to only a portion of the surface of the profiled structure; and/or
The auxiliary film is pressed by a roller, and then the auxiliary film is put into an oven to remove redundant bubbles.
10. The method according to claim 1, wherein the first material layer and/or the second material layer comprises a metal layer, a ceramic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311778659.5A CN117687265A (en) | 2023-12-22 | 2023-12-22 | Method for preparing thin film micro device on special-shaped structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311778659.5A CN117687265A (en) | 2023-12-22 | 2023-12-22 | Method for preparing thin film micro device on special-shaped structure |
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