CN108054261A

CN108054261A - The light-emitting component of current-diffusion layer with flat surface

Info

Publication number: CN108054261A
Application number: CN201810007380.XA
Authority: CN
Inventors: 吴俊毅; 王振奎; 陶青山; 廖文禄; 徐子杰; 彭钰仁; 许嘉良; 吕志强; 谢明勋
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2012-02-14
Filing date: 2012-02-14
Publication date: 2018-05-18
Also published as: CN103247732A; CN103247732B

Abstract

The present invention discloses a kind of manufacturing method of the current-diffusion layer with flat surface, and Bao Han ︰ provide a luminous lamination, have the first semiconductor layer, the second semiconductor layer and active layer, which is located between first semiconductor layer and second semiconductor layer；Multiple contact sites are formed, are shone positioned at this on lamination；It forms a transparency conducting layer to be located on the luminous lamination and cover the plurality of contact site, which has opposite first surface and second surface, and wherein the lamination that shines is located on the second surface；And it forms a reflecting layer and is located on the first surface；Wherein the center line average roughness of the first surface is not more than 2 nanometers；Wherein when the thickness of first semiconductor layer is 3 microns, the distance between the plurality of contact site is 20~40 microns；When the thickness of first semiconductor layer is thinner, the distance between the plurality of contact site is shorter.

Description

The light-emitting component of current-diffusion layer with flat surface

The present invention is Chinese invention patent application (application number：201210032435.5 the applying date：On 2 14th, 2012, Denomination of invention：The light-emitting component of current-diffusion layer with flat surface) divisional application.

Technical field

The present invention relates to a kind of light-emitting component, more particularly to a kind of luminous member of the current-diffusion layer with flat surface Part.

Background technology

Light emitting diode (Light-emitting Diode；LED) at present be widely used in optical display, In traffic sign, data storage device, communication device, lighting device and medical equipment.LED has current-diffusion layer and reflecting layer Between substrate and luminous lamination, but the surface irregularity that current-diffusion layer is contacted with reflecting layer, easily lead to reflecting layer Reflectivity is bad, makes the luminous efficiency of LED reduce.

In addition, above-mentioned LED can also further combine connection to form a light-emitting device (light- with other elements emitting apparatus).Fig. 9 is existing luminous device structure schematic diagram, as shown in figure 9, a light-emitting device 6 includes one Secondary carrier (sub-mount) 60 with an at least circuit 602；An at least solder 62 (solder) is located at above-mentioned secondary carrier 60 On, by this solder 62 by above-mentioned LED 7 be adhesively fixed on secondary carrier 60 and make the substrate 70 of LED 7 on time carrier 60 Circuit 602 forms electrical connection；And an electric connection structure 64, be electrically connected the electrode 72 of LED 7 on time carrier 60 Circuit 602；Wherein, above-mentioned secondary carrier 60 can be that lead frame (lead frame) or large scale inlay substrate (mounting Substrate), the circuit of light-emitting device 6 to be facilitated to plan and improves its heat dissipation effect.

The content of the invention

It is above-mentioned to solve it is an object of the invention to provide a kind of light-emitting component of the current-diffusion layer with flat surface Problem.

The object of the present invention is achieved like this, that is, provides a kind of light-emitting component, has a transparency conducting layer, has phase To a first surface and a second surface；One reflecting layer, under first surface；And one shine lamination, having one has Active layer, on second surface；Wherein the center line average roughness of first surface is not more than 2 nanometers.

The present invention also provides a kind of light-emitting components, have a transparency conducting layer, have an opposite first surface and one Second surface；One luminous lamination, has an active layer, on first surface；And a reflecting layer, positioned at second surface it Under；Wherein the center line average roughness of first surface is less than 10 nanometers of the center line average roughness of second surface.

Description of the drawings

Fig. 1 is the sectional view of the light-emitting component of one embodiment of the invention；

Fig. 2 is the sectional view of the light-emitting component of another embodiment of the present invention；

Fig. 3 is relational graph of the center line average roughness with brightness percentage of the light-emitting component of the present invention；

Fig. 4 is the sectional view of the light-emitting component of another embodiment of the present invention；

Fig. 5 is the schematic diagram of the light-source generation device of one embodiment of the invention；

Fig. 6 is the schematic diagram of the backlight module of one embodiment of the invention；

The schematic diagram of line mean roughness centered on Fig. 7；

Fig. 8 is the top view of the transparency conducting layer of one embodiment of the invention；

Fig. 9 is existing luminous device structure schematic diagram.

Main element symbol description

1、2、3：Light-emitting component

10：Substrate

12：Adhesive layer

14：Reflecting layer

16：Current-diffusion layer

162：First surface

164：Second surface

166：Side confluce

18：Window layers

20：Shine lamination

202：First semiconductor layer

204：Active layer

206：Second semiconductor layer

22、32：First electrode

24、34：Second electrode

26、36：Multiple contact sites

38：Through hole

4：Light-source generation device

41：Light source

42：Power system

43：Control element

5：Backlight module

51：Optical element

6：Light-emitting device

60：Secondary carrier

602：Circuit

62：Solder

64：Electric connection structure

7：LED

70：Substrate

72：Electrode

C：Center line

L：Length

Specific embodiment

Embodiments of the present invention can be described in detail, and be drawn in schema, and same or similar part can be with phase Same number in each schema and illustrates occur.

As shown in Figure 1, a light-emitting component 1 includes a LED, there is an adhesive layer 12, a reflecting layer 14, a current-diffusion layer 16th, a window layers 18, one 20 and one first electrode 22 of lamination that shines is formed on a substrate 10 and 24 shape of a second electrode Into under substrate 10.The lamination 20 that shines has one first semiconductor layer 202 between window layers 18 and first electrode 22；One Active layer 204 is between the first semiconductor layer 202 and first electrode 22；And one second semiconductor layer 206 be located at active layer Between 204 and first electrode 22, wherein the polarity of the first semiconductor layer 202 and the second semiconductor layer 206 is different.In addition, second Semiconductor layer 206 has a roughened upper surface, with improving extraction efficiency.

Substrate 10 can be used to support luminous lamination 12 disposed thereon and other layers or structure, and material can be conduction material Material, including but not limited to copper (Cu), aluminium (Al), molybdenum (Mo), copper-tin (Cu-Sn), copper-zinc (Cu-Zn), copper-cadmium (Cu-Cd), Ni-sn (Ni-Sn), nickel-cobalt (Ni-Co), billon (Au alloy), diamond-like carbon film (Diamond Like Carbon； DLC), graphite (Graphite), carbon fiber (Carbon fiber), metal-base composites (Metal Matrix Composite；MMC), ceramic matric composite (Ceramic Matrix Composite；CMC), silicon (Si), Echothiopate Iodide (IP), zinc selenide (ZnSe), GaAs (GaAs), carborundum (SiC), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), indium phosphide (InP), lithium gallium oxide (LiGaO₂) or lithium aluminate (LiAlO₂)。

Adhesive layer 12 can connecting substrate 10 and reflecting layer 14, and with multiple subordinate layer (not shown)s.Adhesive layer 12 Material can be conductive material, including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), oxygen Change indium yttrium (YZO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN) gallium phosphide (GaP), GaAs (GaAs), gallium arsenide phosphide (GaAsP), indium zinc oxide (IZO), diamond-like carbon film (DLC), copper (Cu), aluminium (Al), indium (In), tin (Sn), golden (Au), platinum (Pt), zinc (Zn), silver-colored (Ag), titanium (Ti), nickel (Ni), lead (Pb), palladium (Pd), germanium (Ge), chromium (Cr), cadmium (Cd), cobalt (Co), manganese (Mn), antimony (Sb), bismuth (Bi), gallium (Ga), tungsten (W), silver-titanium (Ag-Ti), copper-tin (Cu-Sn), copper-zinc (Cu-Zn), copper-cadmium (Cu-Cd), tin-lead-antimony (Sn-Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), ni-sn (Ni-Sn), nickel-cobalt (Ni-Co) or gold close Golden (Au alloy) etc..Reflecting layer 14 can reflect the light for carrying out self-luminous lamination 12, and material is including but not limited to copper (Cu), aluminium (Al), tin (Sn), golden (Au), platinum (Pt), zinc (Zn), silver-colored (Ag), titanium (Ti), nickel (Ni), lead (Pb), silver-titanium (Ag-Ti), copper- Tin (Cu-Sn), copper-zinc (Cu-Zn), copper-cadmium (Cu-Cd), tin-lead-antimony (Sn-Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel- Tin (Ni-Sn), nickel-cobalt (Ni-Co), silver-copper (Ag-Cu) or billon (Au alloy) etc..

Current-diffusion layer 16 can promote current spread, and be contacted directly with reflecting layer 14.The cooperation reflection of current-diffusion layer 16 Layer 14 can form omnidirectional reflector and be exempted from promoting the lamination 20 that shines to the reflectivity of light and protection caused by luminous lamination 20 It is destroyed in the element spread by self-reflection layer 14.Current-diffusion layer 16 can also have multiple subordinate layer (not shown)s, and material can For conductive material, including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), oxygen Change antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), indium oxide yttrium (YZO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN) gallium phosphide (GaP), GaAs (GaAs), gallium arsenide phosphide (GaAsP), oxygen Change indium zinc (IZO) or diamond-like carbon film (DLC).Current-diffusion layer 16 also includes the first surface 162 and one close to substrate 10 Second surface 164 is located on first surface 162, wherein first surface 162 be a flat surface, center line average roughness (Ra) no more than 2 nanometers, more preferably between 0 to 1 nanometer.With reference to figure 3, with the Ra on contact surface of the current-diffusion layer with reflecting layer On the basis of about 2.744 nanometers of light-emitting component, when light-emitting component 1 first surface 162 Ra for 2 nanometers, represent the first table Face 162 is compared with contact surfacing of the current-diffusion layer with reflecting layer that Ra is about 2.744 nanometers, therefore the reflectivity in reflecting layer 14 It improves, the Ra that the brightness of light-emitting component 1 is compared to contact surface of the aforementioned currents diffusion layer with reflecting layer is about 2.744 nanometers Light-emitting component luminance raising about 10%.When Ra is between 0 to 1 nanometer, the luminance raising at least about 20% of light-emitting component 1. The method for adjusting the roughness of first surface 162 for example has chemical mechanical grinding (Chemical mechanical Polishing, CMP) or reactive ion etch (RIE).In addition, the making work of current-diffusion layer 16 can be also formed via adjustment Skill parameter is to reduce surface roughness.Forming the method for current-diffusion layer 16 includes physical deposition methods, is, for example, electron beam evaporation plating (E-Gun), sputter (sputtering) and molecular beam epitaxy (MBE)；Or chemical deposition, it is, for example, plasma enhanced chemistry gas Mutually deposition (PECVD) and Metalorganic chemical vapor deposition (MOCVD).On the other hand, when the Ra of first surface 162 is less than second About 10 nanometers of the Ra on surface 164 can also promote the efficiency of light-emitting component.Aforesaid central line average roughness Ra is for example from machined surface Coarse curve on, intercept one section measurement length L, as shown in fig. 7, and on the basis of coarse deep center line C in length will under Then square curve reflexed calculates whole curves above center line after reflexed and covers area, then to measure length except it.

Window layers 18 can promote current spread and cooperation current-diffusion layer 16 with reflecting layer 14 to promote light-emitting component Light extraction efficiency.Window layers 18 can also have multiple subordinate layer (not shown)s, and material can be conductive material, including but not limited to oxygen Change indium tin (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN) phosphorus It is thin to change gallium (GaP), GaAs (GaAs), gallium arsenide phosphide (GaAsP), indium oxide yttrium (YZO), indium zinc oxide (IZO) or class brill carbon Film (DLC).

The lamination 20 that shines can generate light, have semi-conducting material.Wherein, semi-conducting material has more than one element The group formed selected from gallium (Ga), aluminium (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd) with selenium (Se).Active layer 204 structure can be included as single heterojunction structure (single heterostructure；SH), double-heterostructure (double heterostructure；DH), bilateral double-heterostructure (double-side double heterostructure；DDH) or Multi-layer quantum well (multi-quantum well；MQW).The Ra of the roughened upper surface of second semiconductor layer 206 is about 200 nanometers To 2000 nanometers.For first electrode 22 with second electrode 24 to receive external voltage, material can be transparent conductive material or gold Belong to material.Transparent conductive material is including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), arsenic Change gallium aluminium (AlGaAs), gallium nitride (GaN) gallium phosphide (GaP), GaAs (GaAs), gallium arsenide phosphide (GaAsP), indium zinc oxide (IZO), indium oxide yttrium (YZO) or diamond-like carbon film (DLC).Metal material is including but not limited to copper (Cu), aluminium (Al), indium (In), tin (Sn), golden (Au), platinum (Pt), zinc (Zn), silver-colored (Ag), titanium (Ti), nickel (Ni), lead (Pb), palladium (Pd), germanium (Ge), chromium (Cr), cadmium (Cd), cobalt (Co), manganese (Mn), antimony (Sb), bismuth (Bi), gallium (Ga), tungsten (W), beryllium (Be), silver-titanium (Ag-Ti), copper- Tin (Cu-Sn), copper-zinc (Cu-Zn), copper-cadmium (Cu-Cd), tin-lead-antimony (Sn-Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel- Tin (Ni-Sn), nickel-cobalt (Ni-Co), silver-copper (Ag-Cu), germanium-gold (Ge-Au) or billon (Au alloy) etc..

A light-emitting component 2 shown in Fig. 2 is similar to light-emitting component 1, but also there are multiple contact sites 26 to be located at luminous fold for it Layer 20 and transparency conducting layer 16 between and a window layers 28 positioned at first electrode 22 and luminous lamination 20 between, can conduct and Dissufion current.Each contact site 26 is all separated with other contact sites 26, and can include multiple subordinate layer (not shown)s.It is multiple to connect The material of contact portion 26 is including but not limited to copper (Cu), aluminium (Al), indium (In), tin (Sn), golden (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), nickel (Ni), lead (Pb), palladium (Pd), germanium (Ge), chromium (Cr), cadmium (Cd), cobalt (Co), manganese (Mn), antimony (Sb), bismuth (Bi), gallium (Ga), tungsten (W), beryllium (Be), silver-titanium (Ag-Ti), copper-tin (Cu-Sn), copper-zinc (Cu-Zn), copper-cadmium (Cu-Cd), Tin-lead-antimony (Sn-Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), ni-sn (Ni-Sn), nickel-cobalt (Ni-Co), silver-copper (Ag-Cu), Germanium-gold (Ge-Au), billon (Au alloy), germanium-gold-nickel (Ge-Au-Ni), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), GaAs (GaAs) or gallium arsenide phosphide (GaAsP) etc..Each contact site 26 from above depending on shape can For triangle, rectangle, trapezoidal or circular etc..As shown in figure 8, by taking circular contact site as an example, diameter can be 3~15 microns, Preferably 6~10 microns.The area of multiple contact sites 26 compared with the ratio of the area of 204 upper surface of active layer be about 0.5~ 6%, it is more preferably 1~3%.In order to promote the ability of current spread, some are close to the side confluce 166 of transparency conducting layer 16 The area of contact site is more than the area of other contact sites.Distance between multiple contact sites 26 depends on the first semiconductor layer 202 thickness.Such as when the thickness of the first semiconductor layer 202 is about 3 microns, the distance between multiple contact sites 26 is about For 20~40 microns.The thickness of first semiconductor layer 202 is thinner, and the distance between multiple contact sites 26 is shorter.In addition, window Family layer 28 also has a roughened upper surface, and Ra is about 200 nanometers to 2000 nanometers, with improving extraction efficiency.

As shown in figure 4, a light-emitting component 3 includes a LED, there is adhesive layer 12, reflecting layer 14, current-diffusion layer 16, hair Light lamination 20,28 and one first electrode 32 of window layers are formed on substrate 10.The lamination 20 that shines has one first semiconductor layer 202 between window layers 28 and current-diffusion layer 16；One active layer 204 be located at the first semiconductor layer 202 and window layers 28 it Between；And one second semiconductor layer 206 between active layer 204 and window layers 28.There is not the first electrode 32 disposed thereon Part window layers 28 and the part lamination 20 that shines are removed with the first semiconductor layer of exposed part 202, and barish the first half Conductor layer 202 is removed one through hole 38 of formation and is located among the first semiconductor layer 202.One second electrode 34, which is formed at, first On the window layers 28 disposed thereon of electrode 32, and second electrode 34 extends downward into through hole 38 along the side wall of luminous lamination 20 Among.Light-emitting component 3 also have multiple contact sites 36 be located at shine between lamination 20 and reflecting layer 14, can with luminous lamination 20 and Reflecting layer 14 contacts directly, and is surrounded by transparency conducting layer 16, and wherein second electrode 34 passes through through hole 38 and multiple contact sites 36 Electrical ties.

In this embodiment, substrate 10 can be transparent insulation material, including but not limited to sapphire (Sapphire), diamond (Diamond), glass (Glass), epoxy resin (Epoxy), quartzy (Quartz), acryl (Acryl), aluminium oxide (Al₂O₃), zinc oxide (ZnO) or aluminium nitride (AlN) etc..Adhesive layer 12 can be insulating materials, including but not limited to polyimide (PI), benzocyclobutene (BCB), excessively fluorine cyclobutane (PFCB), magnesia (MgO), Su8, epoxy resin (Epoxy), acrylic acid Resin (AcrylicResin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), poly terephthalic acid second two Ester (PET), makrolon (PC), polyetherimide (Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), glass (Glass), aluminium oxide (Al₂O₃), silica (SiO_x), titanium oxide (TiO₂), tantalum oxide (Ta₂O₅), nitridation Silicon (SiN_x) or spin-coating glass (SOG).

Fig. 5 shows a light-source generation device schematic diagram, and a light-source generation device 4 is produced from comprising a crystal grain with foregoing Light-emitting component chip in any embodiment.Light-source generation device 4 can be a lighting device, such as street lamp, car light or interior A back light of backlight module in lighting source or traffic sign or a flat-panel screens.Light-source generation device 4 has The light source 41 that is made of light emitting element, a power system 42 are to supply 41 1 electric current of light source and a control member Part 43, to control power system 42.

Fig. 6 shows a backlight module schematic cross-sectional view, and the light source that a backlight module 5 is included in previous embodiment generates dress Put 4 and an optical element 51.The light sent by light-source generation device 4 can be pocessed by optical element 51, to be applied to put down Face display, such as the light that scattering light-source generation device 4 is sent.

Above-described embodiment is only that the principle of the present invention and its effect is illustrated, and is not intended to limit the present invention.It is any Persond having ordinary knowledge in the technical field of the present invention can without prejudice to the present invention technical principle and spirit in the case of, It modifies and changes to above-described embodiment.Therefore the scope of the present invention is as mentioned listed by claim.

Claims

A kind of 1. manufacturing method of light-emitting component, which is characterized in that Bao Han ︰

There is provided one to shine lamination, there is the first semiconductor layer, the second semiconductor layer and active layer, the active layer be located at this first half Between conductor layer and second semiconductor layer；

Multiple contact sites are formed, are shone positioned at this on lamination；

It forms a transparency conducting layer to be located on the luminous lamination and cover the plurality of contact site, which has opposite First surface and second surface, the wherein lamination that shines are located on the second surface；And

A reflecting layer is formed to be located on the first surface；

Wherein the center line average roughness of the first surface is not more than 2 nanometers；

Wherein when the thickness of first semiconductor layer is 3 microns, the distance between the plurality of contact site is 20~40 microns； When the thickness of first semiconductor layer is thinner, the distance between the plurality of contact site is shorter.
2. manufacturing method as described in claim 1, also includes：

One substrate is provided；And

It forms an adhesive layer and connects the substrate and the reflecting layer.
3. manufacturing method as described in claim 1, the wherein contact site is a diameter of between 3~15 microns.
4. the center line average roughness of manufacturing method as described in claim 1, the wherein first surface is between 0 to 1 nanometer.
5. manufacturing method as described in claim 1, the wherein lamination that shines have a roughened upper surface.
6. a kind of manufacturing method of luminescence component, Bao Han ︰

There is provided one to shine lamination, there is the first semiconductor layer, the second semiconductor layer and active layer, the active layer be located at this first half Between conductor layer and second semiconductor layer；

Multiple contact sites are formed, are shone positioned at this on lamination；

It forms a transparency conducting layer to be located on the luminous lamination and cover the plurality of contact site, which has opposite First surface and second surface, the wherein lamination that shines are located on the second surface；And

A reflecting layer is formed to be located on the first surface；

Wherein the center line average roughness of the first surface is less than 10 nanometers of the center line average roughness of the second surface；

Wherein when the thickness of first semiconductor layer is 3 microns, the distance between the plurality of contact site is 20~40 microns； When the thickness of first semiconductor layer is thinner, the distance between the plurality of contact site is shorter.
7. manufacturing method as claimed in claim 6, also includes：

A substrate is provided, under the reflecting layer；And

It forms an adhesive layer and connects the substrate and the reflecting layer.
8. manufacturing method as claimed in claim 6, the wherein contact site is a diameter of between 3~15 microns.
9. manufacturing method as claimed in claim 6, wherein

First semiconductor layer is between the transparency conducting layer and the active layer；And

Second semiconductor layer is located at the active layer.
10. manufacturing method as claimed in claim 6, also comprising one window layers of formation on the lamination that shines, the window layers With a roughened upper surface.