CN108051093A - For the infrared thermal imaging temp measuring method in IGBT module temperature field in probe power circulation experiment - Google Patents
For the infrared thermal imaging temp measuring method in IGBT module temperature field in probe power circulation experiment Download PDFInfo
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- CN108051093A CN108051093A CN201711253600.9A CN201711253600A CN108051093A CN 108051093 A CN108051093 A CN 108051093A CN 201711253600 A CN201711253600 A CN 201711253600A CN 108051093 A CN108051093 A CN 108051093A
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- igbt module
- infrared thermography
- infrared
- experiment
- power cycle
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- 238000001931 thermography Methods 0.000 title claims abstract description 71
- 239000000523 sample Substances 0.000 title claims abstract description 43
- 238000002474 experimental method Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000741 silica gel Substances 0.000 claims abstract description 4
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 4
- 239000007921 spray Substances 0.000 claims abstract 2
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004861 thermometry Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0096—Radiation pyrometry, e.g. infrared or optical thermometry for measuring wires, electrical contacts or electronic systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Abstract
The invention discloses the infrared thermal imaging temp measuring methods for IGBT module temperature field in probe power circulation experiment, comprise the following steps：(1) remove the silica gel of IGBT module sample and spray insulation is pitch-dark；(2) IGBT module sample is mounted on water-filled radiator；(3) determine experiment parameter, carry out power cycle experiment；(4) temperature measuring parameter of infrared thermography is set；(5) shot using the external trigger function of infrared thermography with certain frequency f；(6) setting time delay Δ t makes to be shot after the Δ t times that infrared thermography is provided in trigger signal.The advantage of the invention is that by using the external trigger function of infrared thermography, the time for starting shooting to infrared thermography postpones, and can obtain temperature data more in power cycle experiment heating process.This method is easy to operate, and precision and temperature data amount can not be taken into account when solving the problems, such as using infrared thermography thermometric.
Description
Technical field
Thermometry more particularly to one kind the present invention relates to infrared thermography is in probe power circulation experiment
The infrared thermal imaging temp measuring method in IGBT module temperature field.
Background technology
At present, when carrying out power cycle experiment to IGBT module, the temperature field oftened focus in module heating process becomes
Change.Infrared thermal imaging thermometry is due to having the characteristics that thermometric is fast, precision is high, can obtain entire module Temperature Distribution
Measure the ideal method in IGBT module temperature field in power cycle experiment.The thermometric process of infrared thermography is clapped
The limitation of frequency f is taken the photograph, f is larger, and thermal imaging system temperature measurement error increase, measurement precision declines；F is smaller, then in a power cycle
The image shot in the heating process in cycle is less, can usually lack the image at temperature highest moment.
The content of the invention
In order to improve the above problem, the present invention proposes a kind of for IGBT module temperature field in probe power circulation experiment
Infrared thermal imaging temp measuring method, by using the external trigger function of infrared thermography, infrared thermography is started to clap
The time taken the photograph is postponed, and can obtain temperature data more in the heating process in a power cycle cycle.This method is grasped
Make simply, precision and temperature data amount can not be taken into account when solving the problems, such as using infrared thermography thermometric.
The technical solution adopted by the present invention be in probe power circulation experiment IGBT module temperature field it is infrared heat into
The step of picture temp measuring method, the temp measuring method, is as follows：
A IGBT module sample) is removed into silica gel, and one layer of emissivity is sprayed as 0.97 in the inner surface of IGBT module sample
Insulation it is pitch-dark；
B the heat-conducting silicone grease that a layer thickness is 100 μm) is uniformly smeared in the upper surface of water-filled radiator, IGBT module is tried
Sample is installed on water-filled radiator；
C) determine power cycle experiment condition, and power cycle is set to test related experiment parameter, experiment parameter includes adding
Thermocurrent IcSize, heating time T1, T cooling time2, cooling water temperature and flow etc., be that the grid of IGBT module sample applies
+ 15V the conducting voltages of alternate conduction shut-off are so that IGBT module sample carries out on, off repeatedly；
D power cycle experiment) is carried out；
E the temperature field of IGBT module sample in infrared thermography probe power circulation experiment) is used, step is as follows：
(a) infrared thermography and computer are connected, the gate turn-on cut-off signals of IGBT module sample are inputed to red
The outer triggering signal input interface of outer thermal imaging system；
(b) style of shooting for setting infrared thermography is " external trigger "；
(c) temperature measuring parameter of infrared thermography is set, and temperature measuring parameter includes insulate pitch-dark emissivity, atmospheric transmission
Distance etc. between rate, atmospheric temperature, environment temperature, camera lens and tested IGBT module sample；
(d) the filming frequency f of infrared thermography is determined, then infrared thermography shoots the time t used in an image
=1/f obtains N in the heating process of a power cycle of IGBT module sample1=T1/ t=T1F images, N1To clap
Take the photograph the quantity of image；
(e) determine shooting time delay Δ t=t/n, wherein n for the decay time of selection, n >=2；
(f) when infrared thermography outer triggering signal interface to gate-on signal high level when, it is infrared
Thermal imaging system starts to be shot with frequency f, and when gate-on signal is low level, infrared thermography stops shooting；
(g) within next power cycle cycle, when gate-on signal is high level, by shooting time delay Δ
After t, infrared thermography starts to be shot with frequency f, and when gate-on signal is low level, infrared thermography stops
Only shoot；
(h) within next power cycle cycle, time delay becomes 2 Δ t, each power cycle cycle afterwards
Increase time delay, be n Δs t until time delay；
(i) by step (a)-step (h), the nN in power cycle experiment heating process can be obtained1Open image.
The infrared thermography should have high-speed and continuous shooting function.
The infrared thermography should have external signal to trigger shooting function.
The beneficial effects of the invention are as follows：
The temperature field detecting in IGBT module power cycle experiment is carried out using infrared thermography, temperature measurement accuracy is high, speed
Degree is fast, can obtain the thermo parameters method of entire module；Rational infrared thermography filming frequency f is set, makes infrared heat
The thermometric precision of imager is substantially unaffected；Infrared thermal imaging is triggered by using the gate-on signal of IGBT module
Instrument is shot, and the thermometric time of thermal imaging system and power cycle at the time of is mapped；By setting thermometric time delay Δ t,
Add obtainable temperature data amount in power cycle experiment heating process.
Description of the drawings
Fig. 1 is the flow chart of infrared thermal imaging temp measuring method of the present invention.
Fig. 2 is the sequence diagram of infrared thermography thermometric of the present invention.
Fig. 3 is the temperature in the power cycle experiment heating process that infrared thermal imaging temp measuring method of the present invention obtains
Data.
Specific embodiment
According to following embodiments, the present invention may be better understood.
The a length of 150mm of IGBT module sample that the present embodiment uses, width 60mm, a height of 17mm, infrared thermal imaging used
Instrument is the infrared thermography of the model SC7300M of FLIR companies of the U.S..
As shown in Figure 1, a kind of infrared thermal imaging thermometric side for IGBT module temperature field in probe power circulation experiment
Method, specific steps include：
A IGBT module sample) is removed into silica gel, and one layer of emissivity is sprayed as 0.97 in the inner surface of IGBT module sample
Insulation it is pitch-dark；
B the heat-conducting silicone grease that a layer thickness is 100 μm) is uniformly smeared in the upper surface of water-filled radiator, IGBT module is tried
Sample is installed on water-filled radiator；
C) determine power cycle experiment condition, and power cycle is set to test related experiment parameter, experiment parameter includes adding
Thermocurrent IcSize, heating time T1, T cooling time2, cooling water temperature and flow etc., be that the grid of IGBT module sample applies
+ 15V the conducting voltages of alternate conduction shut-off are so that IGBT module sample carries out on, off repeatedly；
D power cycle experiment) is carried out；
E the temperature field of IGBT module sample in infrared thermography probe power circulation experiment) is used, step is as follows：
(a) infrared thermography and computer are connected, the gate turn-on cut-off signals of IGBT module sample are inputed to red
The outer triggering signal input interface of outer thermal imaging system；
(b) style of shooting for setting infrared thermography is " external trigger "；
(c) temperature measuring parameter of infrared thermography is set, and temperature measuring parameter includes insulate pitch-dark emissivity, atmospheric transmission
Distance etc. between rate, atmospheric temperature, environment temperature, camera lens and tested IGBT module sample；
(d) the filming frequency f of infrared thermography is determined, then infrared thermography shoots the time t used in an image
=1/f obtains N in the heating process of a power cycle of IGBT module sample1=T1/ t=T1F images, N1To clap
Take the photograph the quantity of image；
(e) determine shooting time delay Δ t=t/n, wherein n for the decay time of selection, n >=2；
(f) when infrared thermography outer triggering signal interface to gate-on signal high level when, it is infrared
Thermal imaging system starts to be shot with frequency f, and when gate-on signal is low level, infrared thermography stops shooting；
(g) within next power cycle cycle, when gate-on signal is high level, by shooting time delay Δ
After t, infrared thermography starts to be shot with frequency f, and when gate-on signal is low level, infrared thermography stops
Only shoot；
(h) within next power cycle cycle, time delay becomes 2 Δ t, each power cycle cycle afterwards
Increase time delay, be n Δs t until time delay；
(i) by step (a)-step (h), the nN in power cycle experiment heating process can be obtained1Open image.
The infrared thermography should have high-speed and continuous shooting function.
The infrared thermography should have external signal to trigger shooting function.
Although the embodiment of the present invention discloses as above, present invention is not limited to this.Any those skilled in the art, not
Depart from the spirit and scope of the present invention, can make various changes or modifications, therefore protection scope of the present invention should be with right
It is required that subject to limited range.
Claims (3)
1. for the infrared thermal imaging temp measuring method in IGBT module temperature field in probe power circulation experiment, it is characterised in that：It should
The step of temp measuring method, is as follows：
A IGBT module sample) is removed into silica gel, and IGBT module sample inner surface spray one layer of emissivity be 0.97 it is exhausted
Edge is pitch-dark；
B the heat-conducting silicone grease that a layer thickness is 100 μm) is uniformly smeared in the upper surface of water-filled radiator, IGBT module sample is pacified
Loaded on water-filled radiator；
C) determine power cycle experiment condition, and power cycle is set to test related experiment parameter, experiment parameter includes heating electricity
Flow IcSize, heating time T1, T cooling time2, cooling water temperature and flow, apply and alternately lead for the grid of IGBT module sample
+ 15V the conducting voltages that clearance is broken are so that IGBT module sample carries out on, off repeatedly；
D power cycle experiment) is carried out；
E the temperature field of IGBT module sample in infrared thermography probe power circulation experiment) is used, step is as follows：
(a) infrared thermography and computer are connected, the gate turn-on cut-off signals of IGBT module sample are inputed into infrared heat
The outer triggering signal input interface of imager；
(b) style of shooting for setting infrared thermography is " external trigger "；
(c) temperature measuring parameter of infrared thermography is set, and temperature measuring parameter includes insulating pitch-dark emissivity, atmospheric transmissivity, big
Distance between temperature degree, environment temperature, camera lens and tested IGBT module sample；
(d) the filming frequency f of infrared thermography is determined, then infrared thermography shoots the time t=1/ used in an image
F obtains N in the heating process of a power cycle of IGBT module sample1=T1/ t=T1F images, N1For shooting figure
The quantity of picture；
(e) determine shooting time delay Δ t=t/n, wherein n for the decay time of selection, n >=2；
(f) when infrared thermography outer triggering signal interface to gate-on signal high level when, it is infrared heat into
As instrument starts to be shot with frequency f, when gate-on signal is low level, infrared thermography stops shooting；
(g) within next power cycle cycle, when gate-on signal be high level when, through shooting time delay Δ t it
Afterwards, infrared thermography starts to be shot with frequency f, and when gate-on signal is low level, infrared thermography stops
Shooting；
(h) within next power cycle cycle, time delay becomes 2 Δ t, and each power cycle cycle afterwards increases
Time delay is n Δs t until time delay；
(i) by step (a)-step (h), the nN in power cycle experiment heating process can be obtained1Open image.
2. the infrared thermal imaging thermometric according to claim 1 for IGBT module temperature field in probe power circulation experiment
Method, it is characterised in that：The infrared thermography should have high-speed and continuous shooting function.
3. the infrared thermal imaging thermometric according to claim 1 for IGBT module temperature field in probe power circulation experiment
Method, it is characterised in that：The infrared thermography should have external signal to trigger shooting function.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711253600.9A CN108051093A (en) | 2017-12-02 | 2017-12-02 | For the infrared thermal imaging temp measuring method in IGBT module temperature field in probe power circulation experiment |
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| CN201711253600.9A CN108051093A (en) | 2017-12-02 | 2017-12-02 | For the infrared thermal imaging temp measuring method in IGBT module temperature field in probe power circulation experiment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109521347A (en) * | 2018-10-28 | 2019-03-26 | 北京工业大学 | The synchronous pwm power circulation experiment device of multiple automotive grade IGBT modules |
| CN110887863A (en) * | 2018-09-10 | 2020-03-17 | 湖南中车时代电动汽车股份有限公司 | System and method for analyzing performance of heat conduction material under power device application condition |
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Application publication date: 20180518 |
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