CN108039869B - Mixer based on transconductance coefficient correction structure - Google Patents
Mixer based on transconductance coefficient correction structure Download PDFInfo
- Publication number
- CN108039869B CN108039869B CN201711340123.XA CN201711340123A CN108039869B CN 108039869 B CN108039869 B CN 108039869B CN 201711340123 A CN201711340123 A CN 201711340123A CN 108039869 B CN108039869 B CN 108039869B
- Authority
- CN
- China
- Prior art keywords
- transistor
- drain electrode
- electrode
- stage circuit
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000010355 oscillation Effects 0.000 claims abstract description 27
- 230000007850 degeneration Effects 0.000 claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims description 35
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 238000012986 modification Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 238000004088 simulation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1475—Subharmonic mixer arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention relates to a mixer based on a transconductance coefficient correction structure, which comprises a transconductance stage circuit, a switching stage circuit and a load stage circuit which are electrically connected in sequence, wherein the transconductance stage circuit adopts a transconductance coefficient correction structure and a source degeneration inductance structure; the transconductance stage circuit is used for accessing a radio frequency voltage signal and converting the radio frequency voltage signal into a radio frequency current signal; the switching stage circuit is used for accessing local oscillation signals and radio frequency current signals, controlling a plurality of switching tubes arranged in the switching stage circuit to conduct alternately according to the local oscillation signals, and performing switching modulation on the radio frequency current signals by utilizing the alternate conduction of the switching tubes to generate intermediate frequency current signals; the load stage circuit is used for converting the intermediate frequency current signal into a voltage signal and outputting the voltage signal. In the invention, the transconductance stage circuit adopts a transconductance coefficient correction structure, so that the linearity of the mixer is improved on the basis of low power consumption; meanwhile, a source degeneration inductance structure is adopted, so that the conversion gain and linearity of the circuit are further improved.
Description
Technical Field
The present invention relates to a mixer, and more particularly, to a mixer based on a transconductance coefficient correction structure.
Background
In recent years, in the society in which information technology is rapidly developed nowadays, wireless applications are greatly increasing in the fields of mobile phones, personal computers and the like, so that demands for communication equipment are continuously increasing, performance requirements are increasingly high, and rapid growth of wireless communication results in design of low-power-consumption radio frequency integrated circuits. The radio frequency receiver is an important module for wireless communication, and its performance index affects the whole wireless communication system. The design of the mixer plays an important role in the radio frequency transceiver system and is also the strongest part of the radio frequency front-end signal, so that the performance index of the mixer affects the performance index of the whole radio frequency front-end, and the improvement of the performance of the mixer has important significance. Weak signals present at the radio frequency receiver are first amplified by a low noise amplifier and then passed to a mixer. Therefore, in the design of the mixer, performance indexes such as conversion gain, noise, linearity, power consumption, isolation and the like need to be comprehensively considered, and performance parameters of the mixer are compromised.
Disclosure of Invention
The invention aims to solve the technical problem of providing a frequency mixer based on a transconductance coefficient correction structure, and the performance of the frequency mixer is improved on the basis of low power consumption.
The technical scheme for solving the technical problems is as follows: the mixer based on the transconductance coefficient correction structure comprises a transconductance stage circuit, a switching stage circuit and a load stage circuit which are electrically connected in sequence, wherein the transconductance stage circuit adopts a transconductance coefficient correction structure and a source degeneration inductance structure;
the transconductance stage circuit is used for accessing a radio frequency voltage signal, converting the radio frequency voltage signal into a radio frequency current signal and repeatedly using the radio frequency current signal;
the switching stage circuit is used for accessing local oscillation signals and radio frequency current signals, controlling a plurality of switching tubes arranged in the switching stage circuit to conduct alternately according to the local oscillation signals, switching and modulating the radio frequency current signals by utilizing the alternate conduction of the switching tubes, generating intermediate frequency current signals and transmitting the intermediate frequency current signals to the load stage circuit;
the load stage circuit is used for converting the intermediate frequency current signal into a voltage signal and outputting the voltage signal;
the transconductance stage circuit comprises transistors M1-M7, an inductor L1, a capacitor C2, a resistor R1, a resistor R2, a resistor Rb1 and a resistor Rb2; the grid electrode of the transistor M1 is connected with an anode end RF+ of a radio-frequency voltage signal, the drain electrode of the transistor M1 is connected with one end of the inductor L1, the source electrode of the transistor M1 is grounded, and the other end of the inductor L1 is connected with the drain electrode of the transistor M2; the grid electrode of the transistor M3 is connected with the grid electrode of the transistor M4, the drain electrode of the transistor M3 is connected with the drain electrode of the transistor M1, the drain electrode of the transistor M3 is also connected with the switching stage circuit, and the source stage of the transistor M3 is grounded; the grid electrode of the transistor M2 is connected with the negative electrode end RF-of the radio frequency voltage signal, and the source electrode of the transistor M2 is grounded; the drain electrode of the transistor M4 is connected with the drain electrode of the transistor M2, the drain electrode of the transistor M4 is also connected with the switching stage circuit, and the source stage of the transistor M4 is grounded; one end of the resistor Rb2 is connected with a DC bias voltage v2, and the other end of the resistor Rb2 is connected with the grid electrode of the transistor M3; the grid electrode of the transistor M5 is connected with the positive electrode end RF+ of the radio-frequency voltage signal, the drain electrode of the transistor M5 is connected with one end of the capacitor C1, the source electrode of the transistor M5 is grounded, and the other end of the capacitor C1 is connected with the grid electrode of the transistor M7; the grid electrode of the transistor M6 is connected with the negative electrode end RF-of the radio frequency voltage signal, the source electrode of the transistor M6 is grounded, and the drain electrode of the transistor M6 is connected with the drain electrode of the transistor M5; one end of the resistor Rb1 is connected with the gate of the transistor M7, and the other end of the resistor Rb1 is connected with the DC bias voltage V1; the source of the transistor M7 is grounded, the drain of the transistor M7 is connected with one end of the resistor R2, and the other end of the resistor R2 is connected with the voltage VDD; one end of the resistor R1 is connected with the drain electrode of the transistor M5, and the other end of the resistor R1 is connected with the voltage VDD; one end of the capacitor C2 is connected to the drain of the transistor M7, and the other end of the capacitor C2 is connected to the gate of the transistor M4.
The beneficial effects of the invention are as follows: in the mixer based on the transconductance coefficient correction structure, the transconductance stage circuit adopts the transconductance coefficient correction structure, so that the linearity of the mixer is improved on the basis of low power consumption; meanwhile, a source degeneration inductance structure is adopted, so that the conversion gain and linearity of the circuit are further improved.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the switching stage circuit comprises transistors M8-M11, wherein the grid electrode of the transistor M8 is connected with the positive terminal LO+ of the local oscillation signal, the source electrode of the transistor M8 is connected with the drain electrode of the transistor M1, and the drain electrode of the transistor M8 is connected with the load stage circuit; the grid electrode of the transistor M9 is connected with the negative terminal LO-of the local oscillation signal, the source electrode of the transistor M9 is connected with the source electrode of the transistor M8, and the drain electrode of the transistor M9 is connected with the drain electrode of the transistor M11; the grid electrode of the transistor M10 is connected with the negative terminal LO-of the local oscillation signal, the source stage of the transistor M10 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M10 is connected with the drain electrode of the transistor M8; the grid electrode of the transistor M11 is connected with the negative terminal LO+ of the local oscillation signal, the source electrode of the transistor M11 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M11 is connected with the load stage circuit.
The beneficial effects of adopting the further scheme are as follows: and accessing local oscillation signals, and switching and modulating current by adopting transistors to conduct alternately under the control of local oscillation signals so as to realize frequency conversion.
Further, the load stage circuit comprises a resistor R3, a resistor R4, a capacitor C3 and a capacitor C4; one end of the resistor R3 is connected with the drain electrode of the transistor M8, and the other end of the resistor R3 is connected with the power supply voltage VDD; one end of the capacitor C3 is connected with the drain electrode of the transistor M8, and the other end of the capacitor C3 is connected with the power supply voltage VDD; one end of the resistor R4 is connected with the drain electrode of the transistor M11, and the other end of the resistor R4 is connected with the power supply voltage VDD; one end of the capacitor C4 is connected to the drain of the transistor M11, and the other end of the capacitor C4 is connected to the power supply voltage VDD.
The beneficial effects of adopting the further scheme are as follows: the RC low-pass filter load can provide certain voltage gain, and can also filter differential mode interference signals and signals of local oscillation leakage to an intermediate frequency output end.
Further, the device also comprises a current injection circuit, wherein the current injection circuit comprises a transistor M12 and a transistor M13, the gate connection of the transistor M12 is connected with a direct-current bias voltage V0, the source of the transistor M12 is connected with a power supply voltage VDD, and the drain of the transistor M12 is connected with the source of the transistor M9; the gate of the transistor M13 is connected to the gate of the transistor M12, the drain of the transistor M13 is connected to the source of the transistor M10, and the source of the transistor M13 is connected to the power supply voltage VDD.
The beneficial effects of adopting the further scheme are as follows: the current injection circuit is added to increase the current of the transconductance stage and reduce the current flowing through the switching stage, so that the direct current voltage drop of the load resistor is reduced, the output swing is increased to improve the linearity of the mixer, and further, the flicker noise and the thermal noise caused by a direct mechanism of the switching stage can be reduced.
Further, the transistors M1 to M11 are NMOS transistors, and the transistors M12 and M13 are PMOS transistors.
Drawings
FIG. 1 is a schematic circuit diagram of a mixer based on a transconductance coefficient correction structure according to the present invention;
fig. 2 is a simulation diagram of conversion gain in a mixer according to local oscillation power change based on a transconductance coefficient correction structure according to the present invention;
FIG. 3 is a simulation diagram showing the change of conversion gain with output frequency in a mixer based on a transconductance coefficient correction structure according to the present invention;
FIG. 4 is a diagram showing the simulation result of the noise figure of a mixer based on the transconductance coefficient correction structure according to the present invention;
FIG. 5 is a diagram showing the result of linearity simulation of a mixer based on a transconductance coefficient correction structure according to the present invention;
fig. 6 is a power consumption screenshot of a mixer based on a transconductance coefficient correction structure according to the present invention.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in fig. 1, a mixer based on a transconductance coefficient correction structure comprises a transconductance stage circuit, a switching stage circuit and a load stage circuit which are electrically connected in sequence, wherein the transconductance stage circuit adopts the transconductance coefficient correction structure and a source degeneration inductance structure;
the transconductance stage circuit is used for accessing a radio frequency voltage signal, converting the radio frequency voltage signal into a radio frequency current signal and repeatedly using the radio frequency current signal;
the switching stage circuit is used for accessing local oscillation signals and radio frequency current signals, controlling a plurality of switching tubes arranged in the switching stage circuit to conduct alternately according to the local oscillation signals, switching and modulating the radio frequency current signals by utilizing the alternate conduction of the switching tubes, generating intermediate frequency current signals and transmitting the intermediate frequency current signals to the load stage circuit;
and the load stage circuit is used for converting the intermediate frequency current signal into a voltage signal and outputting the voltage signal.
Specific: the transconductance stage circuit comprises a transistor M1, a transistor M2, a transistor M3, a transistor M4, a transistor M5, a transistor M6, a transistor M7, an inductor L1, a capacitor C2, a resistor R1, a resistor R2, a resistor Rb1 and a resistor Rb2; the grid electrode of the transistor M1 is connected with an anode end RF+ of a radio-frequency voltage signal, the drain electrode of the transistor M1 is connected with one end of the inductor L1, the source electrode of the transistor M1 is grounded, and the other end of the inductor L1 is connected with the drain electrode of the transistor M2; the grid electrode of the transistor M3 is connected with the grid electrode of the transistor M4, the drain electrode of the transistor M3 is connected with the drain electrode of the transistor M1, the drain electrode of the transistor M3 is also connected with the switching stage circuit, and the source stage of the transistor M3 is grounded; the grid electrode of the transistor M2 is connected with the negative electrode end RF-of the radio frequency voltage signal, and the source electrode of the transistor M2 is grounded; the drain electrode of the transistor M4 is connected with the drain electrode of the transistor M2, the drain electrode of the transistor M4 is also connected with the switching stage circuit, and the source stage of the transistor M4 is grounded; one end of the resistor Rb2 is connected with a DC bias voltage v2, and the other end of the resistor Rb2 is connected with the grid electrode of the transistor M3; the grid electrode of the transistor M5 is connected with the positive electrode end RF+ of the radio-frequency voltage signal, the drain electrode of the transistor M5 is connected with one end of the capacitor C1, the source electrode of the transistor M5 is grounded, and the other end of the capacitor C1 is connected with the grid electrode of the transistor M7; the grid electrode of the transistor M6 is connected with the negative electrode end RF-of the radio frequency voltage signal, the source electrode of the transistor M6 is grounded, and the drain electrode of the transistor M6 is connected with the drain electrode of the transistor M5; one end of the resistor Rb1 is connected with the gate of the transistor M7, and the other end of the resistor Rb1 is connected with the DC bias voltage V1; the source of the transistor M7 is grounded, the drain of the transistor M7 is connected with one end of the resistor R2, and the other end of the resistor R2 is connected with the voltage VDD; one end of the resistor R1 is connected with the drain electrode of the transistor M5, and the other end of the resistor R1 is connected with the voltage VDD; one end of the capacitor C2 is connected to the drain of the transistor M7, and the other end of the capacitor C2 is connected to the gate of the transistor M4.
The transconductance stage may be implemented using pseudo-differential, fully differential, source degeneration, etc. Pseudo-differential is well suited to implement the transduction phase, and can improve the third order input cut-off (IIP 3), but since it produces common mode second order distortion, the second order input cut-off (IIP 2) is reduced. In addition, the tail current source at the source end of the fully differential input transistor produces a high impedance, which suppresses second order nonlinear currents, and there is a mismatch in the load and the switching transistor, resulting in even order intermodulation in the signal path, increasing the third order intermodulation current IM3. In order to improve the third order input intercept point (IIP 3), the third order distortion is eliminated, a elimination mechanism is arranged at the transconductance stage of the mixer, and a transconductance coefficient correction technical structure is used. By adding additional circuitry to the transconductance stage, a nonlinear term is generated that improves the linearity of the mixer by changing its amplitude and phase. As in fig. 1, transistor M5 and transistor M6 are nonlinear transistors that convert the input voltage signal to nonlinear current. Since the drains of transistors M5 and M6 are connected, the differential term of the current is removed, the current is output through resistors R1 and R2, and the output current is amplified by transistor M3. The small signal model of transistor M1 has a drain current expressed in a Taylor series expansion of:
i d1 ＝g m1 v gs +g' m1 v 2 gs +g” m1 v 3 gs +... (1)
where vgs=vg-VS, vg is the gate voltage, VS is the source voltage, g m1 、g' m1 、
g" m1 Representing the first, second and third order transconductance coefficients of transistor M1, respectively.
It can be found from the above equation that the transconductance coefficient can be changed by changing the drain current of the MOS transistor.
Gate voltage V of transistor M3 G Can be expressed as:
wherein D is 2 Is V G Is a second order transconductance coefficient of (c).
By writing KCL at the drains of M5 and M6, the second order transconductance coefficient of VG is expressed as:
wherein by changing C 1 、R 1 And R is 2 Can change D 2 Is a phase and amplitude of (a) is a phase and amplitude of (b).
The drain current (i1+) of the transistor M1 may be defined as:
I 1 +＝H 1 (w)V RF+ +H 2 (w1,w2)V 2 RF+ +H 3 (w1,w2,w3)V 3 RF+ +... (7)
wherein H1, H2 and H3 are each I 1 The first, second and third order transconductance coefficients of + are also named first, second and third order transconductance kernels.
In the above formula, H1, H2, and H3 may be represented as:
H 1 (w)＝g m1 (8)
the above shows that the transconductance stage H 1 The first order transconductance of (w) is equal to the transistor characteristic g m1 Is used for eliminating H 3 (w 1, w2, w 3) can improve linearity.
The formula of the third-order intermodulation point is:
from the above derivation, it can be found that by adjusting the phases and amplitudes of C1, R1 and R2 to change D2, the gate voltage of the transistor M3 is changed, and the drain current is changed accordingly, so that the transconductance coefficient can be modified. According to equation (11), when the transconductance coefficient changes, it can be used to improve the input third order intermodulation point IIP3, i.e. by introducing an interaction term identical to the third order intermodulation current of the transconductance stage but with opposite phase to improve the IIP3 value of the CMOS active mixer, changing its amplitude and phase values depending on the tuning of the resistors in the added circuit. The noise of the mixer increases slightly due to the increased number of transistors at the RF port of the proposed mixer. In a radio frequency receiver, the higher the conversion gain of the mixer of the previous stage, the lower the noise performance requirements for the circuit of the next stage. The gain expression of the mixer is:
the transconductance stage also adopts a source degeneration inductance structure to output radio frequency current, has good input matching characteristics, and improves the conversion gain and linearity of the circuit. The drain electrodes of the transistor M1 and the transistor M2 are connected with the inductor, so that the flicker noise of an indirect mechanism caused by parasitic capacitance of a source stage of the switching circuit can be reduced, the coupling of radio frequency signals to a ground path through the parasitic capacitance is also inhibited, and the conversion gain of the mixer is improved. The capacitor C2 provides a better input matching characteristic and also improves the linearity of the circuit.
Specific: the switching stage circuit comprises a transistor M8, a transistor M9, a transistor M10 and a transistor M11, wherein the grid electrode of the transistor M8 is connected with the positive terminal LO+ of the local oscillation signal, the source electrode of the transistor M8 is connected with the drain electrode of the transistor M1, and the drain electrode of the transistor M8 is connected with the load stage circuit; the grid electrode of the transistor M9 is connected with the negative terminal LO-of the local oscillation signal, the source electrode of the transistor M9 is connected with the source electrode of the transistor M8, and the drain electrode of the transistor M9 is connected with the drain electrode of the transistor M11; the grid electrode of the transistor M10 is connected with the negative terminal LO-of the local oscillation signal, the source stage of the transistor M10 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M10 is connected with the drain electrode of the transistor M8; the grid electrode of the transistor M11 is connected with the negative terminal LO+ of the local oscillation signal, the source electrode of the transistor M11 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M11 is connected with the load stage circuit.
The switching stage is connected with local oscillation signals, transistors are adopted to conduct in turn under the control of local oscillation signals, when LO+ is conducted, the transistor M8 and the transistor M11 are conducted, and the transistor M9 and the transistor M11 are cut off; when LO-is on, the transistor M9 and the transistor M10 are on, and the transistor M8 and the transistor M11 are off, so that the current is switched and modulated, and frequency conversion is realized.
Specific: the load stage circuit comprises a resistor R3, a resistor R4, a capacitor C3 and a capacitor C4; one end of the resistor R3 is connected with the drain electrode of the transistor M8, and the other end of the resistor R3 is connected with the power supply voltage VDD; one end of the capacitor C3 is connected with the drain electrode of the transistor M8, and the other end of the capacitor C3 is connected with the power supply voltage VDD; one end of the resistor R4 is connected with the drain electrode of the transistor M11, and the other end of the resistor R4 is connected with the power supply voltage VDD; one end of the capacitor C4 is connected to the drain of the transistor M11, and the other end of the capacitor C4 is connected to the power supply voltage VDD.
When a differential mode signal is input, capacitors are arranged on two sides of the load branch circuit to provide a load required by conversion gain, and the RC low-pass filter load can provide a certain voltage gain and also plays a role of filtering.
Specific: the invention further comprises a current injection circuit, wherein the current injection circuit comprises a transistor M12 and a transistor M13, the gate of the transistor M12 is connected with a direct-current bias voltage V0, the source of the transistor M12 is connected with a power supply voltage VDD, and the drain of the transistor M12 is connected with the source of the transistor M9; the gate of the transistor M13 is connected to the gate of the transistor M12, the drain of the transistor M13 is connected to the source of the transistor M10, and the source of the transistor M13 is connected to the power supply voltage VDD.
The current injection circuit adopts a current injection technology, uses a transistor M12 and a transistor M13 as a shunt source, and the grid bias voltage is controlled by v0 voltage, so that the proportion of the injection current to the transconductance stage current can be adjusted, and a better performance parameter is achieved. The current injection reduces the current flowing through the switching tube, thereby reducing noise caused by a direct mechanism of the switching stage and improving noise performance. By setting a reasonable inductance L1 value, resonance is generated between the inductance L1 and parasitic capacitance; when the resonance frequency is resonating at omega RF When the conversion gain of the mixer is improved; when the resonance frequency point is selected to be 2 omega RF When the parasitic capacitance impedance is reduced to 1/3 of the original impedance, the second harmonic nonlinearity caused by the parasitic capacitance is reduced to the minimum; from the above analysis, it can be seen that when the resonance points are at different frequencies, linearity or gain performance can be well optimized at a specific frequency; in this example, by selecting a suitable inductance L1, the resonant frequency of the total parasitic capacitance at the common source node is between the radio frequency fundamental wave and the radio frequency second harmonic, and the conversion gain, noise and linearity performance parameters of the scheme can be improved.
As shown in FIG. 2, which is a simulation diagram of the conversion gain of the mixer according to the present invention with the local oscillation power, it can be seen from FIG. 2 that the conversion gain of the mixer can reach more than 28.4dB.
Fig. 3 shows a simulation of the conversion gain of the mixer of the present invention as a function of output frequency, and it can be seen from fig. 3 that the conversion gain of the mixer is 28.4dB.
Fig. 4 shows a simulation of the noise figure of the mixer of the present invention, which is 8dB as can be seen from fig. 4.
Fig. 5 shows a simulation of the linearity of the mixer of the present invention, which can be seen from fig. 5 to be 10.34dBm.
Fig. 6 shows a power consumption diagram of the mixer of the present invention, and as can be seen from fig. 6, the power consumption of the mixer is 6.86mW.
In summary, the transconductance stage circuit of the mixer based on transconductance coefficient correction adopts a transconductance coefficient correction structure, and by adding an additional circuit to the transconductance stage, a nonlinear term is generated, and by changing the amplitude and the phase of the nonlinear term, the linearity of the mixer is improved. The transconductance stage circuit also adopts a source degeneration inductance structure, so that the conversion gain of the mixer is improved.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (4)
1. A mixer based on a transconductance coefficient correction structure, characterized in that: the circuit comprises a transconductance stage circuit, a switching stage circuit and a load stage circuit which are electrically connected in sequence, wherein the transconductance stage circuit adopts a transconductance coefficient correction structure and a source degeneration inductance structure;
the transconductance stage circuit is used for accessing a radio frequency voltage signal, converting the radio frequency voltage signal into a radio frequency current signal and repeatedly using the radio frequency current signal;
the switching stage circuit is used for accessing local oscillation signals and radio frequency current signals, controlling a plurality of switching tubes arranged in the switching stage circuit to conduct alternately according to the local oscillation signals, switching and modulating the radio frequency current signals by utilizing the alternate conduction of the switching tubes, generating intermediate frequency current signals and transmitting the intermediate frequency current signals to the load stage circuit;
the load stage circuit is used for converting the intermediate frequency current signal into a voltage signal and outputting the voltage signal;
the transconductance stage circuit comprises transistors M1-M7, an inductor L1, a capacitor C2, a resistor R1, a resistor R2, a resistor Rb1 and a resistor Rb2; the grid electrode of the transistor M1 is connected with an anode end RF+ of a radio-frequency voltage signal, the drain electrode of the transistor M1 is connected with one end of the inductor L1, the source electrode of the transistor M1 is grounded, and the other end of the inductor L1 is connected with the drain electrode of the transistor M2; the grid electrode of the transistor M3 is connected with the grid electrode of the transistor M4, the drain electrode of the transistor M3 is connected with the drain electrode of the transistor M1, the drain electrode of the transistor M3 is also connected with the switching stage circuit, and the source stage of the transistor M3 is grounded; the grid electrode of the transistor M2 is connected with the negative electrode end RF-of the radio frequency voltage signal, and the source electrode of the transistor M2 is grounded; the drain electrode of the transistor M4 is connected with the drain electrode of the transistor M2, the drain electrode of the transistor M4 is also connected with the switching stage circuit, and the source stage of the transistor M4 is grounded; one end of the resistor Rb2 is connected with a DC bias voltage v2, and the other end of the resistor Rb2 is connected with the grid electrode of the transistor M3; the grid electrode of the transistor M5 is connected with the positive electrode end RF+ of the radio-frequency voltage signal, the drain electrode of the transistor M5 is connected with one end of the capacitor C1, the source electrode of the transistor M5 is grounded, and the other end of the capacitor C1 is connected with the grid electrode of the transistor M7; the grid electrode of the transistor M6 is connected with the negative electrode end RF-of the radio frequency voltage signal, the source electrode of the transistor M6 is grounded, and the drain electrode of the transistor M6 is connected with the drain electrode of the transistor M5; one end of the resistor Rb1 is connected with the gate of the transistor M7, and the other end of the resistor Rb1 is connected with the DC bias voltage V1; the source of the transistor M7 is grounded, the drain of the transistor M7 is connected with one end of the resistor R2, and the other end of the resistor R2 is connected with the voltage VDD; one end of the resistor R1 is connected with the drain electrode of the transistor M5, and the other end of the resistor R1 is connected with the voltage VDD; one end of the capacitor C2 is connected with the drain electrode of the transistor M7, and the other end of the capacitor C2 is connected with the gate electrode of the transistor M4;
the switching stage circuit comprises transistors M8-M11;
the load stage circuit comprises a resistor R3, a resistor R4, a capacitor C3 and a capacitor C4; one end of the resistor R3 is connected with the drain electrode of the transistor M8, and the other end of the resistor R3 is connected with the power supply voltage VDD; one end of the capacitor C3 is connected with the drain electrode of the transistor M8, and the other end of the capacitor C3 is connected with the power supply voltage VDD; one end of the resistor R4 is connected with the drain electrode of the transistor M11, and the other end of the resistor R4 is connected with the power supply voltage VDD; one end of the capacitor C4 is connected with the drain electrode of the transistor M11, and the other end of the capacitor C4 is connected with the power supply voltage VDD;
the transistor M5 and the transistor M6 are nonlinear transistors.
2. The mixer based on the transconductance coefficient correction structure according to claim 1, wherein: the grid electrode of the transistor M8 is connected with the positive terminal LO+ of the local oscillation signal, the source electrode of the transistor M8 is connected with the drain electrode of the transistor M1, and the drain electrode of the transistor M8 is connected with the load stage circuit; the grid electrode of the transistor M9 is connected with the negative terminal LO-of the local oscillation signal, the source electrode of the transistor M9 is connected with the source electrode of the transistor M8, and the drain electrode of the transistor M9 is connected with the drain electrode of the transistor M11; the grid electrode of the transistor M10 is connected with the negative terminal LO-of the local oscillation signal, the source stage of the transistor M10 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M10 is connected with the drain electrode of the transistor M8; the grid electrode of the transistor M11 is connected with the negative terminal LO+ of the local oscillation signal, the source electrode of the transistor M11 is connected with the drain electrode of the transistor M2, and the drain electrode of the transistor M11 is connected with the load stage circuit.
3. A mixer based on a transconductance coefficient modification structure according to claim 2, wherein: the current injection circuit comprises a transistor M12 and a transistor M13, wherein the gate of the transistor M12 is connected with a direct-current bias voltage V0, the source of the transistor M12 is connected with a power supply voltage VDD, and the drain of the transistor M12 is connected with the source of the transistor M9; the gate of the transistor M13 is connected to the gate of the transistor M12, the drain of the transistor M13 is connected to the source of the transistor M10, and the source of the transistor M13 is connected to the power supply voltage VDD.
4. A mixer based on a transconductance coefficient modification structure according to claim 3, wherein: the transistors M1 to M11 are NMOS transistors, and the transistors M12 to M13 are PMOS transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711340123.XA CN108039869B (en) | 2017-12-14 | 2017-12-14 | Mixer based on transconductance coefficient correction structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711340123.XA CN108039869B (en) | 2017-12-14 | 2017-12-14 | Mixer based on transconductance coefficient correction structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108039869A CN108039869A (en) | 2018-05-15 |
| CN108039869B true CN108039869B (en) | 2023-11-14 |
Family
ID=62103360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711340123.XA Active CN108039869B (en) | 2017-12-14 | 2017-12-14 | Mixer based on transconductance coefficient correction structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108039869B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964614A (en) * | 2018-06-29 | 2018-12-07 | 南通朝旭环保科技有限公司 | Mixer |
| CN109783865B (en) * | 2018-12-14 | 2023-04-28 | 华北电力大学（保定） | Method for solving unit length parameter matrix of three-core power line |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013091351A1 (en) * | 2011-12-20 | 2013-06-27 | 东南大学 | Transconductance-enhancing passive frequency mixer |
| CN106385236A (en) * | 2016-10-17 | 2017-02-08 | 广西师范大学 | Active frequency mixer with high linearity and high gain and method |
| CN106533475A (en) * | 2016-12-09 | 2017-03-22 | 广西师范大学 | Front-end circuit of receiver |
| CN206099903U (en) * | 2016-10-17 | 2017-04-12 | 广西师范大学 | Active mixer of high linearity high -gain |
| CN207460102U (en) * | 2017-12-14 | 2018-06-05 | 广西师范大学 | A kind of frequency mixer based on mutual conductance coefficient correcting principle |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7266357B2 (en) * | 2003-05-12 | 2007-09-04 | Broadcom Corporation | Reduced local oscillator feedthrough quadrature image reject mixer |
-
2017
- 2017-12-14 CN CN201711340123.XA patent/CN108039869B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013091351A1 (en) * | 2011-12-20 | 2013-06-27 | 东南大学 | Transconductance-enhancing passive frequency mixer |
| CN106385236A (en) * | 2016-10-17 | 2017-02-08 | 广西师范大学 | Active frequency mixer with high linearity and high gain and method |
| CN206099903U (en) * | 2016-10-17 | 2017-04-12 | 广西师范大学 | Active mixer of high linearity high -gain |
| CN106533475A (en) * | 2016-12-09 | 2017-03-22 | 广西师范大学 | Front-end circuit of receiver |
| CN207460102U (en) * | 2017-12-14 | 2018-06-05 | 广西师范大学 | A kind of frequency mixer based on mutual conductance coefficient correcting principle |
Non-Patent Citations (2)
| Title |
|---|
| 一种高线性度低噪声下变频混频器;高胜凯;高博;龚敏;周银强;;微电子学(第04期);全文 * |
| 低压CMOS折叠共源共栅混频器的设计;宋丹;张晓林;夏温博;;北京航空航天大学学报(第12期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108039869A (en) | 2018-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8933745B2 (en) | Transconductance-enhancing passive frequency mixer | |
| US8169266B2 (en) | Mixer circuits and methods | |
| CN102075145B (en) | High-linearity folding image mixer | |
| CN107231129B (en) | Harmonic control CMOS mixer based on transformer structure | |
| CN111969956B (en) | Ka-waveband broadband upper frequency converter | |
| US20080061859A1 (en) | Low noise mixer with reduced distortion | |
| CN111711424B (en) | CMOS power amplifier and radio frequency module thereof | |
| CN104124923B (en) | A kind of low-noise mixer circuit | |
| US7161406B1 (en) | Method and apparatus for providing non 2:1 Gilbert cell mixer | |
| CN108039869B (en) | Mixer based on transconductance coefficient correction structure | |
| US9531335B2 (en) | Method and circuitry for CMOS transconductor linearization | |
| US7642816B2 (en) | Transconductor | |
| CN107834980B (en) | Mixer based on current multiplexing technology | |
| CN207460102U (en) | A kind of frequency mixer based on mutual conductance coefficient correcting principle | |
| US7271668B2 (en) | Mixer circuits and methods with improved spectral purity | |
| CN113328710B (en) | High-linearity transconductance circuit | |
| CN111147021B (en) | Voltage controlled oscillator | |
| CN106067765B (en) | Active mixer and mixing method based on active mixer | |
| TWI392222B (en) | Mixer capable of improving signal quality | |
| CN201910768U (en) | High-linearity foldable image mixer | |
| CN109995328A (en) | Frequency mixer, transmitter, chip and relevant device | |
| CN108880477B (en) | Be applied to mixer on Gilbert of LTE MTC electric power thing networking | |
| JPWO2008111491A1 (en) | Third-order intermodulation distortion compensating amplifier and low noise amplifier having the same | |
| KR101073106B1 (en) | Differential oscillator and wireless communicaion apparatus comprising differntial oscillator | |
| CN113364438B (en) | Intermediate frequency buffer circuit and buffer with high linearity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |