CN108039418A - Display device and its manufacture method - Google Patents
Display device and its manufacture method Download PDFInfo
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- CN108039418A CN108039418A CN201711125930.XA CN201711125930A CN108039418A CN 108039418 A CN108039418 A CN 108039418A CN 201711125930 A CN201711125930 A CN 201711125930A CN 108039418 A CN108039418 A CN 108039418A
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- cushion
- inoranic membrane
- dam
- display area
- mask
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/0017—Casings, cabinets or drawers for electric apparatus with operator interface units
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09445—Pads for connections not located at the edge of the PCB, e.g. for flexible circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Display device and its manufacture method.Disclose a kind of display device and its manufacture method that can prevent from forming encapsulating film in line.The display device includes：Substrate, which, which has, is provided with the display area of pixel and the non-display area around display area；Encapsulating film, the encapsulating film include the inoranic membrane of covering display area；And cushion.The cushion be arranged on display area every predetermined interval in non-display area and with the EDGE CONTACT of inoranic membrane.
Description
Technical field
Embodiments of the present invention are related to display device and its manufacture method.
Background technology
With the development of information-intensive society, for showing that the various demands of display device of image are continuously increased.Therefore, it is all
The non-spontaneous emitting display device as liquid crystal display (LCD) device and plasma display (PDP) and such as
Organic light emitting display (OLED) device and quantum dot light emitting show that el display device as (QLED) device is made
With.
Among these display devices, OLED device and QLED devices are self-emission display apparatus.Compared with LCD device,
OLED device and QLED devices have the contrast of broader visual angle and bigger.In addition, it is different from LCD devices, because OLED is filled
Put and single light source is not required with QLED devices, so OLED device and QLED devices can be manufactured with light weight and small size,
And consider power consumption, OLED device and QLED devices are favourable.In addition, OLED device and QLED devices can be by low
D/C voltage drives, and the response speed in each in OLED device and QLED devices is quick.Especially, OLED
Device and QLED devices can have the advantages that manufacture cost is low.
OLED device can include being respectively arranged with the pixel of luminescent device and limit pixel for dividing pixel
Dike.Dike is used as pixel and limits film.Luminescent device can include anode, hole transmission layer, organic luminous layer, electron transfer layer and
Cathode.In this case, when applying high-potential voltage to anode, and to cathode apply low-potential voltage when, hole and electricity
Son is moved to organic luminous layer via hole transmission layer and electron transfer layer respectively, then compound each other in organic luminous layer,
So as to send light.
Due to external environmental factor as such as moisture and oxygen, luminescent device may be deteriorated easily.Send out in order to prevent
The deterioration of optical device, OLED device can include being used for preventing outside moisture and oxygen penetrates into encapsulation inside luminescent device
Film.
QLED devices include ray structure.Ray structure can include anode, the cathode opposite with anode and be arranged on
Luminescent device between anode and cathode.Luminescent device can include hole transmission layer, luminescent layer and electron transfer layer.Shine
Layer can include quanta point material.
Fig. 1 is exemplified with the mother substrate with multiple display panels.Fig. 2 is the edge for the display device for showing correlation technique
The sectional view of the I-I ' of Fig. 1.Fig. 3 is for illustrating cutting for the manufacture method of the inoranic membrane in the display device of correlation technique
Face figure.
Referring to figs. 1 to Fig. 3, handle for convenience, prepare mother substrate (MS) with and meanwhile manufacture multiple display panels (PNL).
Multiple display panels (PNL) are separated from each other, wherein each separated display panel (PNL) is used as display device.In mother substrate
(MS) multiple display panels (PNL) are manufactured at the same time on, multiple display panels are then made by cutting process or line processing
(PNL) it is separated from each other.
In the display device of correlation technique, encapsulating film 30 is set on the substrate 10 with luminescent device 20.This
In the case of, encapsulating film 30 can include the first inoranic membrane 30a, organic film 30b and the second inoranic membrane 30c.Encapsulating film 30 prevents wet
Gas or oxygen are penetrated into luminescent layer and electrode.
First inoranic membrane 30a and the second inoranic membrane 30c are deposited on by substrate 10 by chemical vapor deposition (CVD) method
On.In the case of CVD method, as shown in figure 3, setting mask 40 on the substrate 10, it then will include and be used for the first inoranic membrane
The gas of the element of 30a or the second inoranic membrane 30c is fed to substrate 10.The gas supplied is not provided with mask 40 substrate
Surface in produce chemical reaction, be thus not provided with being formed the first inoranic membrane 30a or the on the surface of mask 40 in substrate 10
Two inoranic membrane 30c.
However, when mask 40 with 10 every predetermined interval of substrate to set, gas penetrate into mask 40 and substrate 10 it
Between interval in so that producing chemical reaction in the corresponding surface of presumptive area of the setting mask 40 with substrate 10.Cause
This, in addition can also be formed in the corresponding surface of presumptive area of the setting mask 40 with substrate 10 first inoranic membrane 30a or
Second inoranic membrane 30c.
If formed in the corresponding surface of presumptive area of the setting mask 40 with substrate 10 first inoranic membrane 30a or
Second inoranic membrane 30c, particularly if first inoranic membrane 30a or the second inoranic membrane 30c is formed in line (SL), then can be with
By cutting process for display panel (PNL) to be separated from each other (that is, lasser cutting or mechanical line is handled) the
Cracked in one inoranic membrane 30a or the second inoranic membrane 30c.Crackle can be diffused into due to external impact through inoranic membrane
Inside, and the moisture or oxygen introduced by crackle may cause the spot of concealed wire or stain.
Recently, in order to overcome the low Step Coverage of CVD method, using the new method of atomic layer deposition (ALD) method come
The first inoranic membrane 30a is deposited on substrate 10 or the second inoranic membrane 30c has received much concern.In the case of ALD methods, covering
It is thin to be formed by alternately supplying base material including ALD metals and reacting gas under conditions of mould 40 is set on the substrate 10
Film.Compared with CVD method, which has absorption and the Step Coverage of bigger.Therefore, can in the case of ALD methods
To adjust the thickness of film, this for formed film processing be favourable.
However, as described above, ALD methods have good adsorptivity, thus mask 40 may prolongedly be arranged on substrate
On 10.Therefore, the possibility that the first inoranic membrane 30a or the second inoranic membrane 30c is formed in line (SL) is high.
In order to overcome the above problem, mask 40 is disposed adjacently with luminescent device 20, with reduce mask 40 and substrate 10 it
Between distance, and further prevent the first inoranic membrane 30a or the second inoranic membrane 30c from penetrating into the region for being provided with mask 40
In.However, if mask 40 is disposed adjacently with luminescent device 20, luminescent device 20 is likely to be broken or deforms, so as to
Dim spot can be produced.
In addition, more metal lines are arranged on substrate 10.Specifically, be arranged on metal wire in non-display area only by
Thin protective film covering for CVD processing.If apply high voltage for CVD processing is instantaneous, the guarantor for being used to protect metal wire
Cuticula may be damaged by high voltage, thus produce electrostatic between the metal wire in mask 40 and non-display area.In this feelings
Under condition, metal wire may be damaged by static electricity, and the metal wire damage that display panel (PNL) is likely to be broken.In addition, cannot
Enough reuse mask 40.
The content of the invention
Therefore, embodiments of the present invention, which are related to, substantially eliminates one caused by the limitation of correlation technique and shortcoming
The display device and its manufacture method of a or more problem.
The one side of embodiments of the present invention aims to provide one kind and can prevent in unexpected region (for example, drawing
Line) in form encapsulating film and prevent the display device and its manufacture method of the electrostatic between mask and metal wire.
The other advantages and features of embodiments of the present invention will be set forth in part in the description, and partly
It will be become apparent for those of ordinary skill in the art by checking after herein below, or can be from the present invention's
Learned in the practice of embodiment.The purpose and further advantage of embodiments of the present invention can be by written specifications
Realize and obtain with the structure that is particularly pointed out in claim and attached drawing.
In order to realize these and other advantage and purpose according to the embodiment of the present invention, as implemented herein
With it is broadly described, there is provided a kind of display device, the display device can include：Substrate, which, which has, is provided with pixel
Display area and the non-display area around the display area；Encapsulating film, the encapsulating film cover the display area and
Including inoranic membrane；And cushion, the cushion are described non-display to be arranged on the display area every predetermined interval
In region and with the EDGE CONTACT of the inoranic membrane.
In the another aspect of embodiments of the present invention, there is provided a kind of method for manufacturing display device, this method
It may comprise steps of：Pixel is set in the display area on substrate, and in non-display area on the substrate
Cushion is set；Mask is set on the cushion；And the inoranic membrane for being used for covering the display area is set, and
Remove the mask.
It should be appreciated that the foregoing general description of embodiments of the present invention and it is described in detail below be all exemplary and explanation
Property, and aim to provide and the present invention for required protection is explained further.
Brief description of the drawings
Attached drawing is included to provide further understanding for the present invention, and is merged in this specification and is formed this explanation
A part for book, attached drawing is exemplified with embodiments of the present invention, and the original used to explain the present invention together with this specification
Reason.
Fig. 1 is exemplified with the mother substrate with multiple display panels.
Fig. 2 is the sectional view for the I-I ' along Fig. 1 for showing multiple display devices according to correlation technique.
Fig. 3 is the sectional view for illustrating the manufacture method of the inoranic membrane in the display device of correlation technique.
Fig. 4 is the stereogram for illustrating display device according to embodiment of the present invention.
Fig. 5 is the plan of the first substrate of diagrammatic illustration 4, source driving IC, flexible membrane, circuit board and timing controller.
Fig. 6 is the plan for illustrating first substrate according to the first embodiment of the invention.
Fig. 7 is the sectional view along the I-I ' of Fig. 6.
Fig. 8 is the sectional view along the II-II ' of Fig. 6.
Fig. 9 is the sectional view along the III-III ' of Fig. 6.
Figure 10 is the sectional view for illustrating the mask being arranged on the cushion of Fig. 8.
Figure 11 is the plan for illustrating first substrate second embodiment of the invention.
Figure 12 is the sectional view along the II-II ' of Figure 11.
Figure 13 is the plan for the first substrate for illustrating the 3rd embodiment according to the present invention.
Figure 14 is the sectional view along the II-II ' of Figure 13.
Figure 15 is the plan for the first substrate for illustrating the 4th embodiment according to the present invention.
Figure 16 is the sectional view along the II-II ' of Figure 14.
Figure 17 is the plan for the first substrate for illustrating the 5th embodiment according to the present invention.
Figure 18 is the plan for the first substrate for illustrating sixth embodiment according to the present invention.
Figure 19 is the sectional view along the III-III ' of Figure 18.
Figure 20 is the sectional view for illustrating the mask being arranged on the cushion of Figure 19.
Figure 21 is the sectional view of the amended embodiment of diagrammatic illustration 19.
Figure 22 is the plan for the first substrate for illustrating the 7th embodiment according to the present invention.
Figure 23 is the sectional view along the III-III ' of Figure 22.
Figure 24 is the sectional view of the amended embodiment of diagrammatic illustration 23.
Figure 25 is the flow chart for illustrating the method for being used to manufacture display device according to the first embodiment of the invention.
Figure 26 A, Figure 26 B, Figure 26 C, Figure 26 D, Figure 26 E, Figure 26 F, Figure 26 G and Figure 26 H are to illustrate to be used to manufacture basis
The sectional view of the method for the display device of the first embodiment of the present invention.
Figure 27 is the flow chart for illustrating the method for being used to manufacture display device second embodiment of the invention.
Figure 28 A, Figure 28 B, Figure 28 C, Figure 28 D, Figure 28 E, Figure 28 F, Figure 28 G, Figure 28 H, Figure 28 I, Figure 28 J, Figure 28 K and
Figure 28 L are the sectional views for illustrating the method for being used to manufacture display device second embodiment of the invention.
Figure 29 is the plan for the first substrate for illustrating the 8th embodiment according to the disclosure.
Figure 30 is the sectional view along the III-III ' of Figure 29.
Figure 31 is the sectional view along the II-II ' of Figure 29.
Embodiment
Reference will now be made in detail to the exemplary embodiment of the present invention, in the accompanying drawings exemplified with the exemplary of the present invention
The example of embodiment.In the case of any possible, in whole attached drawing identical or phase is referred to using identical reference numeral
As component.By by referring to accompanying drawing and the implementation below that describes illustrates advantages and features of the invention and its realization
Method.However, the present invention can implement in different forms, and should not be construed as being limited to herein
The embodiment of elaboration.On the contrary, these embodiments are provided so that the disclosure will be thorough and complete and send out this
Bright scope is fully conveyed to those skilled in the art.In addition, it is defined only by the scope of the appended claims the present invention.
Shape, size, ratio, angle and number disclosed in the accompanying drawings, for describing embodiments of the present invention are only
It is example, and therefore, the invention is not restricted to the details of illustration.Similar reference numeral refers to similar element from beginning to end.
In the following description, when the detailed description of relevant known function or configuration is confirmed as unnecessarily making the present invention's
When vital point is smudgy, the detailed description will be omitted.
In the case where using the " comprising " described in this specification, " having " and "comprising", unless having used " only
", it otherwise can also add another component.Unless referring on the contrary, otherwise the term of singulative can include plural form.
When explaining element, although without clearly describing, but the element is interpreted as including error margin.
When describing position relationship, for example, when sequence of positions is described as "On ", "Top ", "Lower section "
"During side ", unless using " just " or " directly ", it otherwise can include discontiguous situation.
When describing time relationship, for example, when time sequencing is described as "Afterwards ", " afterAfterwards ", " occupy
Afterwards " and "When before ", unless using " just " or " directly ", it otherwise can include discontinuous situation.
It will be appreciated that though various elements can be described using term " first ", " second " etc. herein, but these
Element should not be limited by these terms.These terms are only used to distinguish an element with another element.For example,
Without departing from the scope of the invention, the first element can be referred to as the second element, and similarly, the second element can
To be referred to as the first element.
In addition, " X-direction ", " Y direction " and " Z-direction " is not limited to vertical geometry construction.That is, " X-axis
Direction ", " Y direction " and " Z-direction " can include the wide scope of applicable functional configuration.
Include and any one relevant all combination moreover, it will be appreciated that term is " at least one ".For example, " the
It is at least one among one element, the second element and third element " it can include from the first element, the second element and ternary
It is each in all combinations and the first element of two or more elements selected in part, the second element and third element
Element.In addition, if mention the first element be located at the second element " above ", then it should be appreciated that the first element and second yuan
Part can be in contact with each other, or can be inserted into third element between the first member and the second member.
As can fully understanding those skilled in the art, the feature of various embodiments of the invention can portion
Point or fully coupled to each other or combination, and can be with carrying out various mutual operations each other and technically being driven.This
The embodiment of invention can perform independently of one another, or can be performed together with common dependence.
Hereinafter, display device and its manufacturer according to the embodiment of the present invention is described in detail with reference to the accompanying drawings
Method.
Fig. 4 is the stereogram for illustrating display device according to embodiment of the present invention.Fig. 5 is the of diagrammatic illustration 4
One substrate, source drive the plan of IC, flexible membrane, circuit board and timing controller.For being described below, show according to this
The display device corresponding to organic light emitting display (OLED) device of one embodiment of invention, but not limited to this type.
That is display device according to embodiment of the present invention can be liquid crystal display device, electroluminance display dress
Put, light emitting diode with quantum dots device and electrophoretic display apparatus any one of are worked as.
With reference to Fig. 4 and Fig. 5, display device 100 according to embodiment of the present invention can include display panel
110th, source drive integrated circult (hereinafter referred to as " source drive IC ") 140, flexible membrane 150, circuit board 160 and timing controller
170。
Display panel 110 can include first substrate 111 and second substrate 112.Second substrate 112 can be encapsulation base
Plate.First substrate 111 can be plastic foil or glass substrate, but not limited to this.Second substrate 112 can be plastic foil, glass
Substrate or encapsulating film, but not limited to this type.
On a surface in face of second substrate 112 for first substrate 111, there are select lines, data cable and pixel.
Pixel is prepared in the regional limited is intersected by select lines and data cable.
Each pixel can include thin film transistor (TFT) and include the photophore of first electrode, luminescent layer and second electrode
Part.If supplying gating signal from select lines to each pixel by using thin film transistor (TFT), according to the data of data cable electricity
Scheduled current is supplied to luminescent device by pressure.Therefore, the luminescent device of each pixel can be with according to the predetermined bright of scheduled current
Degree shines.The structure of each pixel will be described in detail with reference to Fig. 6 and Fig. 7.
As shown in figure 5, display panel 110 can include the display area (DA) for being provided with the pixel for showing image
The non-display area (NDA) of image is not shown.Select lines, data cable and pixel can be set in display area (DA), and
And gate driver and pad can be set in non-display area (NDA).
Gate driver is according to the supply gating signal from the gate control signal that timing controller 170 inputs to select lines.
Gate driver can be arranged on the display area (DA) of display panel 110 by the method for panel internal gating driver (GIP)
Side or display panel 110 two peripheral sides non-display area (NDA) in.On the other hand, gate driver can be with
Manufacture, may be mounted on flexible membrane in driving chip, and (TAB) method can be engaged automatically by belt and be attached to
The side of the display area (DA) of display panel 110 or the non-display area (NDA) of two peripheral sides of display panel 110.
Source drives IC 140 to receive digital of digital video data and source control signal from timing controller 170.Source drives IC 140
Digital of digital video data is converted to by analog data voltage according to source control signal, and analog data voltage is fed to data cable.
If manufacturing driving IC 140 in source in driving chip, source driving IC 140 can pass through (COF) method of chip on film or modeling
Chip (COP) method is installed on flexible membrane 150 on material.
Pad as such as data pads can be set in the non-display area (NDA) of display panel 110.Soft
Property film 150 in, there is line for pad and source driving IC 140 to be connected and for by pad and circuit board 160
The line of line connection.Flexible membrane 150 is attached to pad by using anisotropic conducting film, and thus pad can be with flexible membrane
150 line connection.
Circuit board 160 can be attached to flexible membrane 150.The multiple circuits realized in multiple driving chips can be installed
On circuit board 160.For example, timing controller 170 may be mounted on circuit board 160.Circuit board 160 can be printing electricity
Road plate or flexible printed circuit board.
Timing controller 170 receives digital of digital video data from external system plate via the cable of circuit board 160 and timing is believed
Number.Timing controller 170 based on timing signal produce be used for control gate driver operation timing gate control signal and
Source control signal for voltage input driving IC 140.Gate control signal is supplied to gating to drive by timing controller 170
Device, and it is supplied to source to drive IC 140 source control signal.
First embodiment
Fig. 6 is the plan for illustrating first substrate according to the first embodiment of the invention.
With reference to Fig. 6, first substrate 111 is divided into display area (DA) and non-display area (NDA).In non-display area
In domain (NDA), there is welding disking area (PA), dam 120 and cushion 130 for pad.
In display area (DA), exist for showing the pixel of image (P).Each pixel can include film crystal
Pipe and the luminescent device for including first electrode, luminescent layer and second electrode.If by using thin film transistor (TFT) from select lines
Gating signal is supplied to each pixel, then scheduled current is supplied to by luminescent device according to the data voltage of data cable.Therefore,
The luminescent device of each pixel can be shone with the predetermined luminance according to scheduled current.
Hereinafter, will be described in detail with reference to Fig. 7 every in display area (DA) according to the embodiment of the present invention
The structure of a pixel (P).
Fig. 7 is an exemplary sectional view of the pixel in the display area of diagrammatic illustration 6.
With reference to Fig. 7, thin film transistor (TFT) 210 and capacitor 220 be formed in first substrate 111 in face of second substrate 112
On one surface.
Cushion (not shown) can be set on first substrate 111, so that protective film transistor 210 is from moisture
Penetrate through easily by the first substrate 111 of moisture infiltration.
Each thin film transistor (TFT) 210 includes active layer 211, grid 212, source electrode 213 and drain electrode 214.In Fig. 7, film
The top gate type that transistor 210 is located at the top of active layer 211 according to grid 212 is set, but not limited to this type.For example, film is brilliant
Body pipe 210 can be located at the bottom gate type of the lower section of active layer 211 according to grid 212 or grid 212 is located at the top of active layer 211
Set with the double grid type of both lower sections.
Active layer 211 is set on the buffer layer.Active layer 211 can be by silicon-based semiconductor material or based on oxide
Semi-conducting material is formed.Light shield layer can be set on first substrate 111, to stop incidence of external light on active layer 211.
Gate insulating film 230 can be arranged on active layer 211.Gate insulating film 220 can be formed as such as Si oxide
(SiOx) or the single layer structure of inorganic insulating material as silicon nitride (SiNx) or above-mentioned Si oxide (SiOx) and silicon
The sandwich construction of nitride (SiNx).
Grid 212 can be arranged on gate insulating film 230.Grid 212 can be formed as molybdenum (Mo), aluminium (Al), chromium
(Cr), the single layer structure or sandwich construction of golden (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and its alloy, but be not limited to
These materials.
Interlayer insulating film 240 can be arranged on grid 212.Interlayer insulating film 240 can be formed as such as Si oxide
(SiOx) or the single layer structure of inorganic insulating material as silicon nitride (SiNx) or above-mentioned Si oxide (SiOx), silicon
The sandwich construction of nitride (SiNx) and its alloy.
Source electrode 213 and drain electrode 214 can be arranged on interlayer insulating film 240.Source electrode 213 and each in drain electrode 214
It can be connected via through the contact hole of gate insulating film 230 and interlayer insulating film 240 (CH1, CH2) with active layer 211.Source electrode
213 can be formed as molybdenum (Mo), aluminium (Al), chromium (Cr), golden (Au), titanium (Ti), nickel (Ni), neodymium with each in drain electrode 214
(Nd), the single layer structure or sandwich construction of copper (Cu) and its alloy, but it is not limited to these materials.
Each capacitor 220 can include bottom electrode 221 and top electrode 222.Bottom electrode 221 is arranged on gate insulating film 230
On, and bottom electrode 221 is formed by the material of the material identical with grid 212.Top electrode 222 is arranged on interlayer insulating film 240
On, and top electrode 222 with the material of source electrode 213 and the material identical of drain electrode 214 by forming.
Protective film 250 can be arranged on thin film transistor (TFT) 210 and capacitor 220.Protective film 250 may be used as insulating
Film.Protective film 250 can be formed as the individual layer of inorganic material as such as Si oxide (SiOx) or silicon nitride (SiNx)
Structure or the sandwich construction of above-mentioned Si oxide (SiOx) and silicon nitride (SiNx).
Flatted membrane 260 can be arranged on protective film 240, so that as caused by thin film transistor (TFT) 210 and capacitor 220
Step diff area is smooth.Flatted membrane 260 can by such as acrylic resin, epoxy resin, phenolic resin, polyamide,
The organic film of the organic material of polyimide resin etc. is formed.
Luminescent device 280 and dike 284 are arranged on flatted membrane 260.Luminescent device 280 can include first electrode 282,
Luminescent layer 283 and second electrode 281.First electrode 282 may be used as cathode, and second electrode 281 may be used as anode.First
The deposition region of electrode 282, luminescent layer 283 and second electrode 281 can be defined as light-emitting zone (EA).
Second electrode 281 can be arranged on flatted membrane 260.Second electrode 281 can be via through 250 He of protective film
The contact hole (CH3) of flatted membrane 260 is connected with the drain electrode 214 of thin film transistor (TFT) 210.Second electrode 281 can be by with high anti-
The metal material for penetrating rate is formed, and more specifically, is formed as the deposition structure (Ti/Al/Ti) of aluminium and titanium, aluminium and indium tin oxygen
Deposition structure (ITO/AL/ITO), APC alloys and the APC alloys of compound and the deposition structure (ITO/ of indium tin oxide
APC/ITO).Here, APC alloys are the alloys of silver-colored (Ag), palladium (Pd) and copper (Cu).
Dike 284 is disposed over the edge of the second electrode 281 on flatted membrane 260, thus divides light-emitting zone (EA).
Dike 284 can be by organic such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin
The organic film of material is formed.
Luminescent layer 283 is arranged in second electrode 281 and dike 284.Luminescent layer 283 can include hole transmission layer, at least
One luminescent layer and electron transfer layer.In this case, if applying voltage to second electrode 281 and first electrode 282,
Then hole and electronics are moved to luminescent layer via hole transmission layer and electron transfer layer respectively, then multiple each other in luminescent layer
Close, so as to send light.
Luminescent layer 283 can be the white light emission layer for launching white light.In this case, luminescent layer 283 can cover
Lid second electrode 281 and dike 284.Colour filter (not shown) can be set on second substrate 112.
Luminescent layer 283 can be by the red emitting layers for launching feux rouges, the Green-emitting layer for launching green light or use
Formed in the blue-light emitting layer of transmitting blue light.Luminescent layer 283 can be arranged on in 281 corresponding region of second electrode.At this
In the case of kind, colour filter can not be set on second substrate 112.
First electrode 282 is arranged on luminescent layer 283.If OLED device is formed as top emission type, first electrode
282 can be (transparent by the transparent metal material for being transmissive to light of such as indium tin oxide (ITO) or indium-zinc oxide (IZO)
Conductive material, TCO) formed, or can be by the half transmitting of such as magnesium (Mg), silver-colored (Ag) or the alloy of magnesium (Mg) and silver-colored (Ag)
Metal material (half transmitting conductive material) formation.Coating can be set in first electrode 282.
Encapsulating film 290 is set on luminescent device 280.Encapsulating film 290 prevents moisture or oxygen from penetrating into first electrode
In 282.For this reason, encapsulating film 290 can include at least one inoranic membrane and at least one organic film.
For example, encapsulating film 290 can include the first inoranic membrane 291,292 and second inoranic membrane 293 of organic film.This
In the case of, the first inoranic membrane 291 covering first electrode 282, and organic film 292 is arranged on the first inoranic membrane 291.It is preferred that
Ground, organic film 292 can be formed as being enough to prevent particle from entering luminescent layer 283 and first electrode by the first inoranic membrane 291
282 thickness.Second inoranic membrane 293 covers organic film 292.
It is then possible to the first colour filter is set on encapsulating film 290 to the 3rd colour filter (not shown) and black matrix"
(not shown), wherein, red color filter 323 is arranged in red light-emitting area, and blue filter 322 is arranged on blue-light-emitting
In region, green color filter 321 is arranged in green light-emitting area.
The encapsulating film 290 of first substrate 111 is attached to the colour filter of second substrate 112 by using adhesive layer 330
(not shown), so that first substrate 111 and second substrate 112 are engaged with each other.Adhesive layer 330 can be transparent adhesive resin.
Referring again to Fig. 6, welding disking area (PA) can be arranged at the side of first substrate 111.Welding disking area (PA) wraps
Multiple pads are included, and the multiple pad is electrically connected by using anisotropic conducting film with the line of flexible membrane 150.
Dam 120 surrounds display area (DA), so as to prevent organic film 292 from overflowing.In addition, dam 120 is arranged on display area
(DA) between welding disking area (PA), so as to prevent organic film 292 from overflowing and in welding disking area (PA).
Cushion 130 is located in non-display area (NDA), and to be set with display area (DA) every predetermined interval.
Cushion 130 is contacted with the first inoranic membrane 291 included in the encapsulating film 290 of pixel (P) or the second inoranic membrane 293.
Hereinafter, dam and buffering according to the first embodiment of the invention will be described in detail with reference to Fig. 8 to Figure 10
Layer.
Fig. 8 is the sectional view along the II-II ' of Fig. 6.Fig. 9 is the sectional view along the III-III ' of Fig. 6.Figure 10 is example
Show the sectional view of the mask on the cushion for being arranged in Fig. 8.
Fig. 8 to Figure 10 is exemplified with thin film transistor (TFT) (TFT) substrate 200, wherein for convenience of description not in TFT substrates 200
In the detailed construction of thin film transistor (TFT) 210 and capacitor 220 is shown.TFT substrate 200 may include first substrate as shown in Figure 7
111st, gate insulating film 230 and interlayer insulating film 240.
Display device shown in Fig. 8 includes encapsulating film 290, dam 120 and the cushion being arranged on first substrate 111
130.In this case, first substrate 111 includes being provided with the display area (DA) of pixel (P) and is provided with multiple pads
Non-display area (NDA).
Encapsulating film 290 covers the luminescent device 280 being arranged in display area (DA), so as to prevent oxygen or moisture from oozing
Thoroughly into luminescent device 280.In this case, encapsulating film 290 can include at least one inoranic membrane and at least one organic
Film.For example, encapsulating film 290 can include the first inoranic membrane 291,292 and second inoranic membrane 293 of organic film.In such case
Under, the first inoranic membrane 291 covering first electrode 282, organic film 292 is arranged on the first inoranic membrane 291, and second is inorganic
Film 293 covers organic film 292.
Each in first inoranic membrane 291 and the second inoranic membrane 293 can be nitrogenized by silicon nitride, aln precipitation, zirconium
Thing, titanium nitride, hafnium nitride, tantalum nitride, Si oxide, aluminum oxide or titanium oxide are formed.First inoranic membrane 291
It can be deposited with the second inoranic membrane 293 by chemical vapor deposition (CVD) method or atomic layer deposition (ALD) method, but it is unlimited
In this method.
Organic film 292 can be formed by the transparent material for the light for being transmissive to launch from luminescent layer 283.Organic film 292 can
With by being transmissive to such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin from hair
At least 99% organic material of the light that photosphere 283 is launched is formed.Organic film 292 can be by the processing (example using organic material
Such as, vapour deposition process, Method of printing or slot coated method) formed, but it is not limited to these methods.Organic film 292 can pass through
Inkjet process is formed.
Dam 120 is set with around the periphery of display area (DA), so as to prevent the organic film 292 for encapsulating film 290 from overflowing
Go out.The organic film 292 of encapsulating film 290 has good coverage property and the barrier properties of difference, and thus organic film 292 must quilt
Second inoranic membrane 293 encapsulates.However, if organic film 292 flows out desired region, organic film 292 is not by the second inoranic membrane
293 encapsulation, thus oxygen or moisture infiltration pass through exposed organic film 292.In order to overcome this problem, set dam 120 to prevent
Only organic film 292 overflows, so as to prevent organic film 292 to be exposed to the outside of display device.
In addition, dam 120 is arranged between display area (DA) and welding disking area (PA) so that can prevent encapsulating film 290
Organic film 292 overflow, more specifically, can prevent organic film 292 flow into welding disking area (PA).If encapsulating film 290 has
Machine film 292 flows into welding disking area (PA), then is difficult to be fitted in pad since organic film 292 flows into welding disking area (PA)
When electrical contact, be thus likely to occur driving defect or illumination check defect.In order to overcome this problem, there is provided dam 120
To prevent the organic film 292 of encapsulating film 290 from overflowing, thus to prevent organic film 292 from flowing into welding disking area (PA).
Fig. 8 to Figure 10 is not limited to the structure exemplified with a dam 120.According to another example, dam 120 can include
First dam and the second dam, second dam are arranged in non-display area and to be set with the first dam every predetermined interval.Second
Dam prevents organic film 292 from flowing out the first dam.
Dam 120 can be with least manufacturing together with any one in the flatted membrane 260 and dike 284 of pixel (P), and can
With by being formed with the material of at least any one material identical in flatted membrane 260 and dike 284.In this case, dam
120 can be by organic material (for example, acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin
Deng) formed.
Cushion 130 is located in non-display area (NDA), and to be set with display area (DA) every predetermined interval.
Cushion is contacted with least one in the first inoranic membrane 291 and the second inoranic membrane 293.More specifically, cushion 130 is set
Between line (SL) and dam 120 in non-display area (NDA), mask 140 is thus supported so as to inorganic for deposition first
The processing of 291 or second inoranic membrane 293 of film keeps the preset distance between mask 140 and TFT substrates 200.For this reason, mask 140
It is arranged on while being contacted with cushion 130 on cushion 130.
If the first inoranic membrane 291 of deposition or the second inoranic membrane after mask 140 is arranged on cushion 130
293, then the first inoranic membrane 291 or the second inoranic membrane are formed in the remaining area in addition to the region with mask 140
293.In this case, by using cushion 130, space is not present between mask 140 and TFT substrate 200, so that
Obtaining can prevent the first inoranic membrane 291 or the second inoranic membrane 293 from penetrating into the region with mask 140.Finally, cushion
130 are arranged between dam 120 and line (SL), and mask 140 is arranged on cushion while being contacted with cushion 130
On 130, it thus it can be prevented that the first inoranic membrane 291 or the second inoranic membrane 293 are formed in the periphery of cushion 130, and more
Specifically, the first inoranic membrane 291 or the second inoranic membrane 293 can be prevented to be formed in line (SL).
In addition, as shown in figure 9, cushion 130 is arranged between dam 120 and welding disking area (PA), so that can prevent
The first inoranic membrane 291 or the second inoranic membrane 293 are formed in welding disking area (PA).Accordingly it is possible to prevent by the first inoranic membrane
291 or the defects of the second electrical contact in pad caused by inoranic membrane 293 caused by drive defect or illumination to check defect.
As described above, cushion 130 connects with least one edge in the first inoranic membrane 291 and the second inoranic membrane 293
Touch.Fig. 8 shows the edge of 130 and first inoranic membrane 291 of cushion and the EDGE CONTACT of the second inoranic membrane 293, but is not limited to
This structure.
According to another example, cushion 130 can be with the EDGE CONTACT of the second inoranic membrane 293.In more detail, Ke Yitong
Different deposition mas is crossed to deposit the first inoranic membrane 291 and the second inoranic membrane 293.It can be sunk by using the first mask
The first inoranic membrane 291 of product, and can be by using second the second inoranic membrane of masked-deposition 293.In this case, first
Mask with respect to bigger, and is disposed proximate to luminescent device 280 than the second mask, thus 291 to the second nothing of the first inoranic membrane
Machine film 293 is relatively smaller.Therefore, the area of the first inoranic membrane 291 is more relatively smaller than the area of the second inoranic membrane 293.Second nothing
The first inoranic membrane 291 and the organic film 292 being arranged on the first inoranic membrane 291 is completely covered in machine film 293.
According to another example, cushion 130 can be with the EDGE CONTACT of the first inoranic membrane 291.In more detail, Ke Yitong
Different deposition process is crossed to deposit the first inoranic membrane 291 and the second inoranic membrane 293.Since the first inoranic membrane 291 is arranged on not
On flat luminescent device 280, so depositing the first inoranic membrane 291 by using with the ALD methods of high Step Coverage.
Under conditions of being arranged on while mask 140 is contacted with cushion 130 on cushion 130, it can be deposited by ALD methods
First inoranic membrane 291.Therefore, cushion 130 can be contacted with the first inoranic membrane 291.Further, since the second inoranic membrane 293 is set
Put on the organic film 292 of relatively flat, it is possible to which the second inoranic membrane 293 is deposited by CVD method.Mask 140 with
Cushion 130 is arranged on while being spaced apart under conditions of the top of cushion 130, and it is inorganic can to deposit second by CVD method
Film 293.Therefore, the first inoranic membrane 291 and organic film 292 is completely covered in the second inoranic membrane 293.
In addition, the height (H2) of cushion 130 can height identical or than dam 120 with the height (H1) on dam 120
(H1) it is big.If the height (H2) of cushion 130 be less than dam 120 height (H1), for deposition the first inoranic membrane 291 or
Protective cover 120 can be masked 140 in the step that mask 140 is arranged on cushion 130 of the processing of second inoranic membrane 293
Damage.If organic film 292 is contacted with the dam 120 damaged, the oxygen or moisture that oozed the dam 120 of damage can be absorbed in
In organic film 292, then penetrate into luminescent device 280, so that luminescent device 280 deteriorates.
Preferably, as shown in figure 8, the height (H2) of cushion 130 is more than the height (H1) on dam 120, so that can be to prevent
Only dam 120 damages in the step that mask 140 is arranged on cushion 130, but not limited to this structure.If it can realize
Accurate control to mask 140, the then possibility that dam 120 is damaged by mask 140 substantially reduce.Therefore, it reduce provide it
Highly (H2) is more than the necessity of the cushion 130 of the height (H1) on dam 120.
Cushion 130 can with least manufacturing together with any one in the flatted membrane 260 and dike 284 of pixel (P), and
And can be by being formed with the material of at least any one material identical in flatted membrane 260 and dike 284.In this case,
Cushion 130 can be by organic material (for example, acrylic resin, epoxy resin, phenolic resin, polyamide, polyamides are sub-
Polyimide resin etc.) formed.
Second embodiment
Figure 11 is the plan for illustrating first substrate second embodiment of the invention.Figure 12 is along Figure 11
The sectional view of II-II '.
Figure 11 to Figure 12 exemplified with thin film transistor (TFT) (TFT) substrate 200, wherein, for convenience of description, in TFT substrates
The detailed construction of thin film transistor (TFT) 210 and capacitor 220 not shown in 200.TFT substrate 200 may include as shown in Figure 7
One substrate 111, gate insulating film 230 and interlayer insulating film 240.
With reference to Figure 11, first substrate 111 is divided into display area (DA) and non-display area (NDA).In non-display area
In domain (NDA), there is welding disking area (PA), dam 120 and cushion 130 for pad.Just it is arranged on dam 120 and viewing area
For cushion 130 between domain (DA), Figure 11 and the first substrate 111 shown in Figure 12 are different from the shown in Fig. 6 to Figure 10
One substrate.Hereinafter, the detailed description for the component identical with the component shown in Fig. 6 to Figure 10 will be omitted.
Dam 120 is disposed about the periphery of the cushion 130 in non-display area (NDA), so as to prevent organic film
292 flow out from the periphery of cushion 130.In addition, dam 120 is arranged between cushion 130 and welding disking area (PA), so that
It can prevent organic film 292 from flowing into welding disking area (PA).
Figure 11 and Figure 12 shows a dam 120, but is not limited to the structure.According to another example, dam 120 can include
First dam and the second dam, second dam are arranged in non-display area and to be set with the first dam every predetermined interval.Second
Dam prevents the periphery on first dam of the outflow of organic film 292.
Cushion 130 is located in non-display area (NDA).Cushion and the first inoranic membrane 291 and the second inoranic membrane 293
In at least one contact.In more detail, cushion 130 is arranged on the dam in display area (DA) and non-display area (NDA)
Between 120, mask 140 is thus supported, so that the processing for the first inoranic membrane 291 of deposition or the second inoranic membrane 293 keeps covering
Preset distance between mould 140 and TFT substrate 200.For this reason, mask 140 be arranged on while being contacted with cushion 130 it is slow
Rush on layer 130.
If the first inoranic membrane 291 of deposition or the second inoranic membrane after mask 140 is arranged on cushion 130
293, then the first inoranic membrane 291 or the second inoranic membrane are formed in the remaining area in addition to the region with mask 140
293.In this case, by using cushion 130, space is not present between mask 140 and TFT substrate 200, so that
Obtaining can prevent the first inoranic membrane 291 or the second inoranic membrane 293 from penetrating into the region with mask 140.Finally, cushion
130 are arranged between dam 120 and display area (DA), and mask 140 be arranged on while being contacted with cushion 130 it is slow
Rush on layer 130, thus it can be prevented that the first inoranic membrane 291 or the second inoranic membrane 293 are formed in the periphery of cushion 130, and
And more specifically, the first inoranic membrane 291 or the second inoranic membrane 293 can be prevented to be formed in line (SL).
As described above, cushion 130 connects with least one edge in the first inoranic membrane 291 and the second inoranic membrane 293
Touch.Figure 12 is but unlimited exemplified with the edge of 130 and first inoranic membrane 291 of cushion and the EDGE CONTACT of the second inoranic membrane 293
In this structure.
According to another example, cushion 130 can be with the EDGE CONTACT of the first inoranic membrane 291.In more detail, Ke Yitong
Different deposition mas and different deposition process are crossed to deposit the first inoranic membrane 291 and the second inoranic membrane 293.Firstly, since
First inoranic membrane 291 is arranged on uneven luminescent device 280, so by using the ALD methods with high Step Coverage
Deposit the first inoranic membrane 291.Under conditions of being arranged on while the first mask is contacted with cushion 130 on cushion 130,
First inoranic membrane 291 can be deposited by ALD methods.Therefore, cushion 130 can be contacted with the first inoranic membrane 291.In addition,
Since the second inoranic membrane 293 is arranged on the organic film 292 of relatively flat, it is possible to inorganic by CVD method deposition second
Film 293.Under conditions of being arranged on while the second mask is not being overlapped with cushion 130 and dam 120 in TFT substrate 200,
Second inoranic membrane 293 can be deposited by CVD method.Compared with the first mask, the second mask have relatively small mask (or
Shaping) area and relatively large aperture area, to provide than 291 the second big inoranic membrane 293 of the first inoranic membrane.Therefore, second
The first inoranic membrane 291 and the organic film 292 being arranged on the first inoranic membrane 291 is completely covered in inoranic membrane 293.
In addition, the height (H2) of cushion 130 can be more than the height (H1) on dam 120.If the height of cushion 130
(H2) be equal to or less than height (H1), then for the first inoranic membrane 291 of deposition or the second inoranic membrane 293 processing by mask
140 are arranged in the step on cushion 130, and protective cover 120 can be masked 140 damages.If organic film 292 and damage
Dam 120 contacts, and the oxygen or moisture for penetrating through the dam 120 of damage can be absorbed in organic film 292, then penetrate into hair
In optical device 280, so that luminescent device 280 deteriorates.
According to the embodiment of the present invention, the height (H2) of cushion 130 is more than the height (H1) on dam 120, so that can
To prevent dam 120 that mask 140 is arranged on buffering in the processing for the first inoranic membrane 291 of deposition or the second inoranic membrane 293
Damaged in step on layer 130, but not limited to this structure.
In addition, cushion 130 is not overlapping with first electrode 282.If cushion 130 is overlapping with first electrode 282,
When mask 140 is arranged on cushion 130 by the processing for the first inoranic membrane 291 of deposition or the second inoranic membrane 293, the
One electrode 282 can be damaged due to the movement of mask 140.If first electrode 282 is damaged, it is difficult to correctly drive picture
Plain (P), so as to dim spot occur.
According to the embodiment of the present invention, cushion 130 is not overlapping with first electrode 282, so that can prevent (or
Reduce) 282 mask 140 is being arranged on cushion in the processing for the first inoranic membrane 291 of deposition or the second inoranic membrane 293
First electrode is damaged when on 130.
3rd embodiment
Figure 13 is the plan for the first substrate for illustrating the 3rd embodiment according to the present invention.Figure 14 is along Figure 13
II-II ' sectional view.
Figure 13 to Figure 14 exemplified with thin film transistor (TFT) (TFT) substrate 200, wherein, for convenience of description, in TFT substrates
The detailed construction of thin film transistor (TFT) 210 and capacitor 220 not shown in 200.TFT substrate 200 may include as shown in Figure 7
One substrate 111, gate insulating film 230 and interlayer insulating film 240.
With reference to Figure 13 and Figure 14, first substrate 111 is divided into display area (DA) and non-display area (NDA).Non-
In display area (NDA), there is welding disking area (PA), dam 120, first buffer layer 132 and second buffer layer for pad
134.For the cushion 130 including first buffer layer 132 and second buffer layer 134, Figure 13 and the first base shown in Figure 14
Plate 111 is different from the first substrate shown in Fig. 7 to Figure 11.Hereinafter, will omit identical with the component shown in Fig. 6 to Figure 10
Component detailed description.
Dam 120 is set with the periphery of the first buffer layer 132 in non-display area (NDA), so as to prevent organic film
292 flow out from the periphery of first buffer layer 132.In addition, dam 120 be arranged on first buffer layer 132 and welding disking area (PA) it
Between, so that can prevent organic film 292 from flowing into welding disking area (PA).
Figure 13 and Figure 14 shows a dam 120, but is not limited to the structure.According to another example, dam 120 can include
First dam and the second dam, second dam are arranged in non-display area and to be set with the first dam every predetermined interval.Second
Dam prevents the periphery on first dam of the outflow of organic film 292.
First buffer layer 132 is located in non-display area (NDA), and 132 and first inoranic membrane 291 of first buffer layer
EDGE CONTACT.In more detail, the first buffering is set in non-display area (NDA) between dam 120 and display area (DA)
Layer 132, thus supports the first mask, so that the processing for the first inoranic membrane 291 of deposition makes the first mask and TFT substrate 200
Between keep predetermined distance.For this reason, the first mask is arranged on first buffer layer while being contacted with first buffer layer 132
On 132.
If by the first mask be arranged in first buffer layer 132 after deposition the first inoranic membrane 291, except
The first inoranic membrane 291 is formed in remaining area outside region with the first mask.In this case, by using
One cushion 132, is not present space between the first mask and TFT substrate 200, so that the first inoranic membrane 291 can be prevented
Penetrate into the region with the first mask.Finally, first buffer layer 132 is arranged between dam 120 and display area (DA),
And the first mask is arranged in first buffer layer 132 while being contacted with first buffer layer 132, thus it can be prevented that
One inoranic membrane 291 is formed in the periphery of first buffer layer 132, more specifically, can prevent the first inoranic membrane 291 is formed in draw
In line (SL).
In addition, first buffer layer 132 is not overlapping with first electrode 282.If first buffer layer 132 and first electrode 282
It is overlapping, then when the processing for the first inoranic membrane 291 of deposition is setting mask in first buffer layer 132, first electrode 282
It can be damaged due to the movement of the first mask.If first electrode 282 is damaged, it is difficult to correctly drive pixel, thus may be used
Dim spot can occur.
According to the embodiment of the present invention, first buffer layer 132 is not overlapping with first electrode 282, so that can prevent
(or reduction) damages first electrode when the processing for the first inoranic membrane 291 of deposition is setting mask in first buffer layer 132
282。
Second buffer layer 134 is located in non-display area (NDA), and 134 and second inoranic membrane 293 of second buffer layer
EDGE CONTACT.In more detail, dam 120 and the line (SL) second buffer layer 134 being arranged in non-display area (NDA)
Between, the second mask is thus supported, so that the processing for the second mask inoranic membrane 293 of deposition makes the second mask and TFT substrate
Predetermined distance is kept between 200.For this reason, the second mask is arranged on the second buffering while being contacted with second buffer layer 134
On layer 134.
If by the second mask be arranged in second buffer layer 134 after deposition the second inoranic membrane 293, except
The second inoranic membrane 293 is formed in remaining area outside region with the second mask.In this case, by using
Two cushions 134, are not present space between the second mask and TFT substrate 200, so that the second inoranic membrane 293 can be prevented
Penetrate into the region with the second mask.Finally, second buffer layer 134 is arranged between dam 120 and line (SL), and
Second mask is arranged in second buffer layer 134 while being contacted with second buffer layer 134, thus it can be prevented that the second nothing
Machine film 293 is formed in the periphery of second buffer layer 134, more specifically, the second inoranic membrane 293 can be prevented to be formed in line
(SL) in.
According to the embodiment of the present invention, first buffer layer 132 and second buffer layer 134 are provided so that the first nothing
291 and second inoranic membrane 293 of machine film has mutually different dimensions.In more detail, first buffer layer 132 is arranged on 120 He of dam
Between display area (DA), second buffer layer 132 is arranged on the periphery on dam 120 so that the first inoranic membrane 291 and dam 120 are anti-
Only organic film 292 overflows, and organic film 292 is completely covered in the second inoranic membrane 293, so as to prevent the infiltration of moisture or oxygen.
In this case, the first inoranic membrane 291 and the second inoranic membrane 293 can pass through identical deposition process or different depositions
Method is formed.
In addition, the height (H2) of first buffer layer 132 can be more than the height (H1) on dam 120.If first buffer layer
132 height (H2) is equal to or less than the height (H1) on dam 120, then dam 120 can be at the place for the first inoranic membrane 291 of deposition
Being arranged on the first mask in the step in first buffer layer 132 for reason is damaged by the first mask.In addition, second buffer layer 134
Height (H3) can height (H1) identical with the height (H1) on dam 120 or more than dam 120.If second buffer layer 134
Height (H3) be less than the height (H1) on dam 120, then dam 120 can be in the processing for the second inoranic membrane 293 of deposition by second
Mask is arranged in the step in second buffer layer 134 to be damaged by the second mask.If organic film 292 connects with the dam 120 damaged
Touch, then the oxygen or moisture for penetrating through the dam 120 of damage can be absorbed in organic film 292, then penetrated into luminous
In device 280, so that luminescent device 280 deteriorates.
First buffer layer 132 and second buffer layer 134 can with the flatted membrane 260 and dike 284 of pixel (P) at least
Any one is manufactured together, and can be by the material with least any one material identical in flatted membrane 260 and dike 284
Material is formed.In this case, first buffer layer 132 and second buffer layer 134 can be by organic materials (for example, acrylic acid tree
Fat, epoxy resin, phenolic resin, polyamide, polyimide resin etc.) formed.
4th embodiment
Figure 15 is the plan for the first substrate for illustrating the 4th embodiment according to the present invention.Figure 16 is along Figure 15
II-II ' sectional view.
Figure 15 to Figure 16 exemplified with thin film transistor (TFT) (TFT) substrate 200, wherein, for convenience of description, in TFT substrates
The detailed construction of thin film transistor (TFT) 210 and capacitor 220 not shown in 200.TFT substrate 200 may include as shown in Figure 7
One substrate 111, gate insulating film 230 and interlayer insulating film 240.
With reference to Figure 15 and Figure 16, first substrate 111 is divided into display area (DA) and non-display area (NDA).Non-
In display area (NDA), there is welding disking area (PA) and cushion 130 for pad.With first shown in Fig. 6 to Figure 10
First substrate shown in substrate difference, Figure 15 and Figure 16 is not provided with dam, and is included in the first base shown in Figure 15 and Figure 16
Encapsulating film in plate is not provided with organic film.Hereinafter, the component identical with the component shown in Fig. 6 to Figure 10 will be omitted
Describe in detail.
Encapsulating film 290 covers the luminescent device 280 being arranged on display area (DA), so as to prevent moisture or oxygen from oozing
Thoroughly into luminescent device 280.Encapsulating film 290 includes at least one inoranic membrane.It is inorganic that encapsulating film 290 includes at least one first
Film 291.In this case, the first inoranic membrane 291 covering first electrode 282.
First inoranic membrane 291 can be by silicon nitride, aln precipitation, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitrogen
Compound, Si oxide, aluminum oxide or titanium oxide are formed.First inoranic membrane 291 can pass through chemical vapor deposition (CVD)
Method or atomic layer deposition (ALD) method deposition, but it is not limited to this method.
Figure 15 and Figure 16 is not limited to the structure exemplified with first inoranic membrane 291.According to another example, Ke Yicun
In the first inoranic membrane 291 and the second inoranic membrane 292.
Cushion 130 is arranged in non-display area (NDA), and with the EDGE CONTACT of the first inoranic membrane 291.It is more detailed
Carefully, cushion 130 is set with line (SL) every predetermined interval in non-display area (NDA), thus supports mask 140,
So as to make to keep predetermined distance between mask 140 and TFT substrate 200 for the processing of the first inoranic membrane 291 of deposition.For this reason,
Mask 140 is arranged on cushion 130 while being contacted with cushion 130.
If the first inoranic membrane 291 of deposition after mask 140 is being arranged on cushion 130, except with covering
The first inoranic membrane 291 is formed in remaining area outside the region of mould 140.In this case, by using cushion 130,
Space is not present between mask 140 and TFT substrate 200, so that can prevent the first inoranic membrane 291 from penetrating into mask 140
Region in.Finally, to set cushion 130 with line (SL) every predetermined interval in non-display area (NDA), and
And mask 140 is arranged on cushion 130 while contacted with cushion 130, thus it can be prevented that 291 shape of the first inoranic membrane
Into in the periphery of cushion 130, more specifically, the first inoranic membrane 291 can be prevented to be formed in line (SL).
Cushion 130 can with least manufacturing together with any one in the flatted membrane 260 and dike 284 of pixel (P), and
And can be by being formed with the material of at least any one material identical in flatted membrane 260 and dike 284.In this case,
Cushion 130 can be by organic material (for example, acrylic resin, epoxy resin, phenolic resin, polyamide, polyamides are sub-
Polyimide resin etc.) formed.
5th embodiment
Figure 17 is the plan for the first substrate for illustrating the 5th embodiment according to the present invention.
With reference to Figure 17, first substrate 111 is divided into display area (DA) and non-display area (NDA).In non-display area
In domain (NDA), there is welding disking area (PA), dam 120 and cushion 130 for pad.In this case, shown in Figure 17
Cushion 130 can be formed by multiple island-shaped patterns.The cushion 130 formed by multiple island-shaped patterns can be applied to this
The other embodiment of invention.
Cushion 130 can be formed by peripheral multiple island-shaped patterns along dam 120.According to the present invention 5th is real
Mode is applied, cushion 130 is formed by multiple island-shaped patterns rather than linear pattern, so that can make non-display area (NDA)
In stress increase reduce.
Sixth embodiment
Figure 18 is the plan for the first substrate for illustrating sixth embodiment according to the present invention.
In display area (DA), there are select lines and data cable intersected with each other.In display area (DA), exist
For showing the pixel of image (P) with the matrix configuration by select lines intersected with each other and data cable restriction.If gating letter
Number each pixel (P) is supplied to from select lines, then scheduled current is supplied to by luminescent device according to the data voltage of data cable
280.Therefore, the luminescent device 280 for each pixel (P) can be shone with the predetermined luminance according to scheduled current.In addition,
Supply voltage is supplied to power cord.Supply voltage is supplied to each pixel (P) by power cord.
In non-display area (NDA), there is the power supply auxiliary line (VAL) and power supply auxiliary line being connected with power cord
(VAL) pad (PAD) and cushion 130 of connection.Even if the detailed construction of first substrate 111 is not shown, but in order to
Easy to illustrate, the data-link route (DLL) being connected with data cable is also provided with non-display area (NDA).
Welding disking area (PA) can be arranged on the side of first substrate 111.Welding disking area (PA) includes multiple pads, and
And multiple pads are electrically connected with the line of flexible membrane 150 by using anisotropic conducting film.
Dam 120 surrounds display area (DA), so as to prevent organic film 292 from overflowing.In addition, in display area (DA) and weldering
Dam 120 is set between disk area (PA), so as to prevent the organic film 292 included in the encapsulating film 290 of pixel (P) from flowing into weldering
In disk area (PA).
Data-link route (DLL) is connected correspondingly with the pad (PAD) of welding disking area (PA), and and viewing area
The data cable in domain (DA) connects correspondingly.In detail, one end of data-link route (DDL) is via the first contact hole and number
Connected according to line, and the other end of data-link route (DDL) is connected via the second contact hole with pad (PAD).Can be by making
Pad (PAD) is electrically connected with the line of flexible membrane 150 via the 3rd contact hole with anisotropic conducting film.
Here, one end connected with data cable of data-link route (DLL) is parallel with data cable, data-link route (DLL)
With pad (PAD) connection the other end it is parallel with pad (PAD), and the remaining area of data-link route (DLL) relative to
Data cable is inclined.
Data-link route (DLL) can be set with the gate metallic pattern that the material of the material identical with grid 212 is formed
Put.The source/drain gold that data cable and pad (PAD) can be formed with the material of the material identical with the drain electrode of source electrode 213/ 214
Metal patterns are set.
The power supply auxiliary line (VAL) parallel with select lines and the pad (PAD) and display area (DA) of welding disking area (PA)
Power cord connection.If apply supply voltage, power supply auxiliary line (VAL) from pad (PAD) to power supply auxiliary line (VAL)
Supply voltage is supplied to power cord.In this case, power supply auxiliary line (VAL) is not directly connected to power cord, but logical
Cross and be connected correspondingly with power cord using connecting line.
The gate metallic pattern that connecting line can be formed with the material of the material identical with grid 212 is set.Power supply aids in
The source/drain metal figure that line (VAL) and power cord can be formed with the material of the material identical with the drain electrode of source electrode 213/ 214
Case is set.
Cushion 130 is arranged on the metal pattern of non-display area (NDA), more specifically, being applied from pad (PAD)
Voltage is powered up to power supply auxiliary line (VAL) thereon.In addition, encapsulating film 290 of the cushion 130 with forming pixel (P)
First inoranic membrane 291 or the second inoranic membrane 293 contact.Sixth embodiment according to the present invention, the first inoranic membrane 291 or the
Some regions of the upper surface of two inoranic membranes 293 covering cushion 130.
Hereinafter, the cushion of sixth embodiment according to the present invention will be described in detail with reference to Figure 19.
Figure 19 is the sectional view along the III-III ' of Figure 18.Figure 20 is to illustrate to be arranged in covering on the cushion of Figure 19
The sectional view of mould.Figure 21 is the sectional view of the amended embodiment of diagrammatic illustration 19.Hereinafter, first will mainly be described
Difference between embodiment and sixth embodiment, and description to same parts will be omitted.
On the first substrate 111 of the display device shown in Figure 19, there are encapsulating film 290, dam 120 and cushion 130.
In this case, first substrate 111 is divided into non-display area (NDA) and is provided with the display area of pixel (P)
(DA).Non-display area (NDA) includes the welding disking area (PA) for being provided with multiple pads (PAD).
Encapsulating film 290 covers the luminescent device 280 being arranged in display area (DA), so as to prevent moisture or oxygen from oozing
Thoroughly into luminescent device 280.In this case, encapsulating film 290 can include at least one inoranic membrane and at least one organic
Film.For example, encapsulating film 290 can include the first inoranic membrane 291,292 and second inoranic membrane 293 of organic film.First inoranic membrane
291 covering first electrodes 282, organic film 292 is arranged on the first inoranic membrane 291, and the second inoranic membrane 293 cover it is organic
Film 292.
Dam 120 is provided about the periphery of display area (DA), so as to prevent from being included in organic in encapsulating film 290
Film 292 overflows.The organic film 292 being included in encapsulating film 290 has good coverage property and the barrier properties of difference, thus
Organic film 292 must be encapsulated by the second inoranic membrane 293.However, if organic film 292 flows out desired region, organic film 292
Do not encapsulated by the second inoranic membrane 293, thus oxygen or moisture infiltration pass through exposed organic film 292.In order to overcome this to ask
Topic, there is provided dam 120 to prevent organic film 292 from overflowing, so as to prevent organic film 292 to be exposed to the outside of display device.
In addition, dam 120 is arranged between display area (DA) and welding disking area (PA), so that can prevent from being included in
Organic film 292 in encapsulating film 290 overflows, more specifically, preventing organic film 292 from flowing into welding disking area (PA).If for sealing
The organic film 292 for filling film 290 flows into welding disking area (PA), then is difficult to welding since organic film 292 flows into welding disking area (PA)
Appropriate electrical contact is carried out in disk, driving defect is thus likely to occur or illumination checks defect.In order to overcome this problem,
There is provided dam 120 to prevent the organic film 292 for encapsulating film 290 from overflowing, so as to prevent organic film 292 from flowing into welding disking area
(PA)。
Figure 19 and Figure 20 is not limited to the structure exemplified with a dam 120.According to another example, dam 120 can include
First dam and the second dam, second dam are arranged in non-display area and to be set with the first dam every predetermined interval.Second
Dam prevents organic film 292 from flowing out the first dam.
Dam 120 can with least manufacturing together with any one in the flatted membrane 260 and dike 284 in pixel (P), and
Can be by being formed with the material of at least any one material identical in the flatted membrane 260 and dike 284 in pixel (P).At this
In the case of kind, dam 120 can be by organic material (for example, acrylic resin, epoxy resin, phenolic resin, polyamide, poly-
Imide resin etc.) formed.
Cushion 130 is located in non-display area (NDA).Cushion and the first inoranic membrane 291 and the second inoranic membrane 293
In at least one EDGE CONTACT.In more detail, cushion 130 be arranged on line (SL) in non-display area (NDA) and
Between dam 120, mask 140 is thus supported, so that the processing for the first inoranic membrane 291 of deposition or the second inoranic membrane 293 is kept
Preset distance between mask 140 and TFT substrate 200.For this reason, mask 140 is arranged on while being contacted with cushion 130
On cushion 130, as shown in figure 20.
If the first inoranic membrane 291 of deposition or the second inoranic membrane after mask 140 is arranged on cushion 130
293, then the first inoranic membrane 291 or the second inoranic membrane are formed in the remaining area in addition to the region with mask 140
293.In this case, by using cushion 130, space is not present between mask 140 and TFT substrate 200, so that
Obtaining can prevent the first inoranic membrane 291 or the second inoranic membrane 293 from penetrating into the region with mask 140.Finally, cushion
130 are arranged between dam 120 and line (SL), and mask 140 is arranged on cushion while being contacted with cushion 130
On 130, it thus it can be prevented that the first inoranic membrane 291 or the second inoranic membrane 293 are formed in the periphery of cushion 130, and more
Specifically, the first inoranic membrane 291 or the second inoranic membrane 293 can be prevented to be formed in line (SL).
In addition, cushion 130 is arranged between dam 120 and welding disking area (PA), so that can prevent in welding disking area
(PA) the first inoranic membrane 291 or the second inoranic membrane 293 are formed in.Accordingly it is possible to prevent due to the first inoranic membrane 291 or the second
Defect or illumination is driven to check defect caused by the defects of electrical contact in pad caused by inoranic membrane 293.
In addition, if the first inoranic membrane 291 or the second inoranic membrane 293 are deposited by CVD method, then for deposition first
The processing moment of 291 or second inoranic membrane 293 of inoranic membrane forms high voltage.Especially, electric charge moment is gathered in mask 140
In edge (E), it is possible thereby to mask 140 and the power supply auxiliary line (VAL) being arranged in region corresponding with edge (E) it
Between produce electrostatic, the defects of this can cause in mask 140 and power supply auxiliary line (VAL).Formed in power supply auxiliary line (VAL)
Protective film 250.However, since protective film 250 is generally relatively thin, so while the first inoranic membrane 291 of deposition or the second inoranic membrane
The high voltage of 293 processing, protective film 250 may be stripped.
In order to overcome these problems, sixth embodiment according to the present invention, is set in non-display area (NDA)
(more specifically, in power supply auxiliary line (VAL)) sets cushion 130 on metal pattern.For depositing the first inoranic membrane 291
Or second inoranic membrane 293 processing, as shown in figure 20, mask 140 be arranged to cover cushion 130 upper surface some
Region.The EDGE CONTACT of 130 and first inoranic membrane 291 of cushion or the second inoranic membrane 293, and the upper surface of cushion 130
Some regions covered by the first inoranic membrane 291 or the second inoranic membrane 293.
Therefore, cushion 130 is arranged between power supply auxiliary line (VAL) and the edge (E) of mask 140.Therefore, even if
For deposition the first inoranic membrane 291 or the second inoranic membrane 293 processing in the edge of mask 140 (E) moment have accumulated largely
Electric charge, the electrostatic between mask 140 and power supply auxiliary line (VAL) can also be prevented by using cushion 130.
As described above, some regions of the upper surface of cushion 130 are by the first inoranic membrane 291 and the second inoranic membrane 293
At least one covering.Figure 19 shows some regions of the upper surface of cushion 130 by the first inoranic membrane 291 and the second nothing
Machine film 293 covers, but not limited to this structure.
Another example according to the present invention, only the second inoranic membrane 293 can be formed in the one of the upper surface of cushion 130
On a little regions, and cushion 130 can be with the EDGE CONTACT of the second inoranic membrane 293.In more detail, 291 He of the first inoranic membrane
Second inoranic membrane 293 can pass through different depositions.Since the first inoranic membrane 291 is arranged on uneven shine
On device 280, so depositing the first inoranic membrane 291 by using with the ALD methods of high Step Coverage.In ALD methods
In the case of, it is different from CVD method, high voltage is not produced, so as to not produce electrostatic between mask and power supply auxiliary line.Therefore,
After to set mask with 111 every predetermined interval of first substrate, the first inoranic membrane can be deposited by ALD methods
291.In this case, mask can be contacted with cushion 130, or can be to be set with 130 every predetermined interval of cushion
Put.Mask can be configured to the whole upper surface of covering cushion 130.
Further, since the second inoranic membrane 293 is arranged on the organic film 292 of relatively flat, it is possible to by CVD side
Method deposits the second inoranic membrane 293.Under conditions of being arranged on while mask 140 is contacted with cushion 130 on cushion 130,
Second inoranic membrane 293 can be deposited by CVD method.In this case, mask 140 can be configured to covering cushion
Some regions of 130 upper surface.Therefore, the first inoranic membrane 291 and organic film 292 is completely covered in the second inoranic membrane 293.
As shown in figure 21, cushion 130 is provided with least one groove 135 for exposing protective film 250, so that
Prevent moisture or oxygen from penetrating into display area (DA).
Cushion 130 can with least manufacturing together with any one in the flatted membrane 260 and dike 284 in pixel (P),
And can be by being formed with the material of at least any one material identical in the flatted membrane 260 and dike 284 in pixel (P).
In this case, cushion 130 can be by organic material (for example, acrylic resin, epoxy resin, phenolic resin, polyamides
Polyimide resin, polyimide resin etc.) formed.
7th embodiment
Figure 22 is the plan for the first substrate for illustrating the 7th embodiment according to the present invention.Including the first power supply
In terms of the power supply auxiliary line of auxiliary line (VAL1) and second source auxiliary line (VAL2), first substrate and Figure 18 shown in Figure 22
Shown first substrate is different.Hereinafter, the detailed description for the component identical with the component of Figure 18 will be omitted.
In non-display area (NDA), there are dam 120, the first power supply auxiliary line (VAL1) being connected with power cord, set
Put the second source auxiliary line (VAL2) in the first power supply auxiliary line (VAL1), be connected with the first power supply auxiliary line (VAL1)
Pad (PAD) and cushion 130.Even if the detailed construction of first substrate 111 is not shown, but for convenience of description,
The data-link route (DLL) being connected with data cable is provided with non-display area (NDA).
The power supply auxiliary line (VAL) parallel with select lines and the pad (PAD) and display area (DA) of welding disking area (PA)
Power cord connection.If apply supply voltage, power supply auxiliary line (VAL) from pad (PAD) to power supply auxiliary line (VAL)
Supply voltage is supplied to power cord.In this case, power supply auxiliary line (VAL) is not directly connected to power cord, but logical
Cross and be connected correspondingly with power cord using connecting line.
Power supply auxiliary line (VAL) can include the first power supply auxiliary line (VAL1) and second source auxiliary line (VAL2).The
Two power supply auxiliary lines (VAL2) are arranged in the first power supply auxiliary line (VAL1), and are aided in via contact hole and the first power supply
Line (VAL1) connects.In more detail, second source auxiliary line (VAL2) is via the contact hole through three buffer layer 136 and
One power supply auxiliary line (VAL1) connects.Since second source auxiliary line (VAL2) is additionally provided on the first power supply auxiliary line
(VAL1) on, the cross-sectional area of power supply auxiliary line (VAL) can be increased.Finally, power supply can be realized by reducing resistance
Stable supplying.
The gate metallic pattern that connecting line can be formed with the material of the material identical with grid 212 is set.First power supply
The source/drain gold that auxiliary line (VAL1) and power cord can be formed with the material of the material identical with the drain electrode of source electrode 213/ 214
Metal patterns are set.
Cushion 130 is arranged on the metal pattern of non-display area (NDA), more specifically, being arranged on from pad
(PAD) supply voltage is applied to power supply auxiliary line (VAL) thereon.In addition, encapsulation of the cushion 130 with forming pixel (P)
The first inoranic membrane 291 or the second inoranic membrane 293 of film 290 contact.7th embodiment according to the present invention, cushion 130 wrap
136 and the 4th cushion 138 of three buffer layer is included, the first inoranic membrane 291 or the second inoranic membrane 293 cover the 4th cushion 138
Upper surface some regions.
Hereinafter, the cushion of the 7th embodiment according to the present invention will be described in detail with reference to Figure 23 and Figure 24.
Figure 23 is the sectional view along the III-III ' of Figure 22.Figure 24 is the amended embodiment of diagrammatic illustration 23
Sectional view.Just include the cushion 130 of 136 and the 4th cushion 138 of three buffer layer and be arranged on three buffer layer 136
And for the 4th second source auxiliary line (VAL2) between cushion 138, Figure 23 and first substrate and Figure 18 shown in Figure 24
It is different to the first substrate shown in Figure 20.Hereinafter, will omit for the detailed of the component identical with the component of Figure 18 to Figure 20
Describe in detail bright.
On the first substrate 111 of the display device shown in Figure 22, there are encapsulating film 290, dam 120 and cushion 130.
In this case, first substrate 111 is divided into non-display area (NDA) and is provided with the display area (DA) of pixel.It is non-
Display area (NDA) includes being provided with the welding disking area (PA) of multiple pads (PAD).
Cushion 130 includes 136 and the 4th cushion 138 of three buffer layer.Three buffer layer 136 is arranged on non-display
In the first power supply auxiliary line (VAL1) in region (NDA).Second source auxiliary line (VAL2) is arranged on three buffer layer 136
On, and be connected via through the contact hole of three buffer layer 136 and protective film 250 with the first power supply auxiliary line (VAL1).The
Four power supply auxiliary line cushions 138 are arranged in second source auxiliary line (VAL2).
At least one EDGE CONTACT in 4th cushion 138 and the first inoranic membrane 291 and the second inoranic membrane 293.It is right
In the processing for depositing the first inoranic membrane 291 or the second inoranic membrane 293, mask 140 is arranged to cover the 4th cushion 138
Some regions of upper surface.4th cushion 138 and the EDGE CONTACT of the first inoranic membrane 291 or the second inoranic membrane 293, and
Some regions of the upper surface of 4th cushion 138 are covered by the first inoranic membrane 291 or the second inoranic membrane 293.
Therefore, the 4th cushion 138 is arranged between second source auxiliary line (VAL2) and the edge (E) of mask 140.
Therefore, though for deposition the first inoranic membrane 291 or the second inoranic membrane 293 processing in the edge of mask 140 (E) moment
Substantial amounts of electric charge is have accumulated, mask 140 and second source auxiliary line can also be prevented by using the 4th cushion 138
(VAL2) electrostatic between.In addition, 136 and the 4th cushion 138 of three buffer layer is arranged on the first power supply auxiliary line (VAL1)
Between the edge (E) of mask 140.Therefore, even if the processing for the first inoranic membrane 291 of deposition or the second inoranic membrane 293 exists
Moment have accumulated substantial amounts of electric charge in the edge (E) of mask 140, can also be buffered by using three buffer layer 136 and the 4th
Layer 138 prevents the electrostatic between 140 and first power supply auxiliary line (VAL1) of mask.
As described above, some regions in the upper surface of the 4th cushion 138 can be by the first inoranic membrane 291 and second
At least one covering in inoranic membrane 293.Figure 23 shows some regions of the upper surface of the 4th cushion 138 by the first nothing
291 and second inoranic membrane 293 of machine film covers.
Another example according to the present invention, only the second inoranic membrane 293 can be formed in the upper surface of the 4th cushion 138
Some regions on, and the 4th cushion 138 can be with the EDGE CONTACT of the second inoranic membrane 293.In more detail, Ke Yitong
Cross different deposition the first inoranic membrane 291 and the second inoranic membrane 293.Since the first inoranic membrane 291 is arranged on injustice
On smooth luminescent device 280, so depositing the first inoranic membrane 291 by using with the ALD methods of high Step Coverage.
It is different from CVD method in the case of ALD methods, high voltage is not produced, so as to not produced between mask and power supply auxiliary line
Electrostatic.Therefore, after to set mask with 111 every predetermined interval of first substrate, the can be deposited by ALD methods
One inoranic membrane 291.In this case, mask can be contacted with the 4th cushion 138, or can with the 4th cushion
138 every predetermined intervals are set.Mask can be configured to the whole upper surface of the 4th cushion 138 of covering.
Further, since the second inoranic membrane 293 is arranged on the organic film 292 of relatively flat, it is possible to by CVD side
Method deposits the second inoranic membrane 293.It is arranged on while mask 140 is contacted with the 4th cushion 138 on the 4th cushion 138
Under conditions of, the second inoranic membrane 293 can be deposited by CVD method.In this case, mask 140 can be configured to cover
Some regions of the upper surface of the 4th cushion 138 of lid.Therefore, 291 He of the first inoranic membrane is completely covered in the second inoranic membrane 293
Organic film 292.
In addition, as shown in figure 23,136 and the 4th cushion 138 of three buffer layer can be of the same size, but not
It is limited to this structure.Another example according to the present invention, as shown in figure 24, the area of the 4th cushion 138 can be than the 3rd buffering
The area of layer 136 is with respect to bigger.
Cushion 130 can with least manufacturing together with any one in the flatted membrane 260 and dike 284 in pixel (P),
And can be by being formed with the material of at least any one material identical in the flatted membrane 260 and dike 284 in pixel (P).
For example, three buffer layer 136 and flatted membrane 260 can be manufactured simultaneously, and can be formed from the same material.4th is slow
Rushing layer 138 and dike 284 can be manufactured simultaneously, and can be formed from the same material.
Figure 18 to Figure 28 shows that cushion 130 is arranged between dam 120 and welding disking area (PA), but not limited to this knot
Structure.Another example according to the present invention, cushion 130 can be disposed about dam 120.In addition, cushion 130 can be by
Multiple island-shaped patterns are formed.If cushion 130 is formed by multiple island-shaped patterns, cushion 130 preferably be arranged on it is non-
Extended in more metal lines in display area (NDA) with continuous pattern.In non-display area (NDA), if it is desired, remove
Outside power supply auxiliary line (VAL), more metal line (not shown) can also be set.Designed according to panel, more metal lines can
To be arranged between display area (DA) and welding disking area (PA), or being not provided with for non-display area (NDA) can be arranged on
The side of welding disking area (PA).Since cushion 130 is arranged in more metal lines, can prevent for depositing encapsulation film
Electrostatic between the metal wire of the processing of first inoranic membrane 291 or the second inoranic membrane 293 and the edge (E) of mask 140.
Figure 25 is the flow chart for the method for illustrating the display device for being used to manufacture the first embodiment of the present invention.Figure 26 A
It is the sectional view for the method for illustrating the display device for being used to manufacture the first embodiment of the present invention to Figure 26 H.
First, pixel (P) is formed in display area (DA), and cushion is formed in non-display area (NDA)
130(S2501)。
In more detail, as shown in fig. 26, TFT substrate 200 is prepared, and protective film 250 is formed in TFT substrate 200.
Protective film 250 is used as dielectric film.Protective film 250 can be formed such as Si oxide (SiOx) or silicon nitride (SiNx)
The single layer structure of such inorganic insulating material or the multilayer knot of above-mentioned Si oxide (SiOx) and silicon nitride (SiNx)
Structure.
As shown in fig. 26b, there is provided flatted membrane 260, dam 120 and bottom breaker 1301.In more detail, in protective film 250
On be provided with flatted membrane 260, dam 120 and bottom breaker 1301.In this case, dam 120 is arranged on non-display area
(NDA) in, and bottom breaker 1301 is arranged on the periphery on dam 120.In flatted membrane 260, dam 120 and bottom breaker 1301
Each can be by organic such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin
The organic film of material is formed.Flatted membrane 260 is formed single layer structure, but not limited to this structure.Flatted membrane 260 can be by shape
As the sandwich construction for including two layers or more layer.For example, if flatted membrane 260 is formed to include two layers of double-decker,
Then it can additionally be inserted into protective film (not shown) between this two layers of flatted membrane 260.If flatted membrane 260 includes lower flat
Whole film and upper flatted membrane, then optionally can manufacture cushion 1301 and dam 120 with together with lower flatted membrane or upper flatted membrane.
For example, cushion 1301 and dam 120 can be manufactured together with lower flatted membrane (not shown), or can only with lower flatted membrane one
Play manufacture cushion 1301.Furthermore, it is possible to manufacture cushion 1301 and dam 120, Huo Zheke together with upper flatted membrane (not shown)
Only to manufacture cushion 1301 together with upper flatted membrane.
Figure 26 B show that dam 120 is arranged between bottom breaker 1301 and flatted membrane 260.It is another according to the present invention to show
Example, it is convenient to omit dam 120.
In addition, Figure 26 B show that bottom breaker 1301 is arranged on the periphery on dam 120.Another example according to the present invention,
Bottom breaker 1301 can be arranged between dam 120 and flatted membrane 260.
Figure 26 B show while manufacture dam 120 and flatted membrane 260.Another example according to the present invention, dam 120 can be with
Protective film 250 or dike 284 manufacture together.
As shown in Figure 26 C, it is arranged to make film crystal through the contact hole of protective film 250 and flatted membrane 260 (CH3)
The source electrode of pipe 210 or drain electrode exposure, and form second electrode 281.Second electrode 281 can be by the gold with high reflectance
Belong to material to be formed, more specifically, being formed as the deposition knot of deposition structure (Ti/Al/Ti), aluminium and the indium tin oxide of aluminium and titanium
The deposition structure (ITO/APC/ITO) of structure (ITO/AL/ITO), APC alloys and APC alloys and indium tin oxide.Here, APC
Alloy is the alloy of silver-colored (Ag), palladium (Pd) and copper (Cu).
As shown in fig. 26d, dike 284 and upper cushion 1302 are formed.In more detail, dike 284 is configured to covering flatted membrane
The edge of second electrode 281 on 260, so as to divide light-emitting zone (EA).Then, upper cushion 1302 is arranged on lower buffering
On layer 1301.Each in dike 284 and upper cushion 1302 can be by such as acrylic resin, epoxy resin, phenolic aldehyde tree
The organic film of the organic material of fat, polyamide, polyimide resin etc. is formed.
As shown in fig. 26e, luminescent layer 283 and first electrode 282 are set.In more detail, luminescent layer 283 is arranged on second
On electrode 281 and dike 284.Then, first electrode 282 is arranged on luminescent layer 283.First electrode 282 can be by such as indium tin
Transparent metal material (transparent conductive material, TCO) shape for being transmissive to light of oxide (ITO) or indium-zinc oxide (IZO)
Into, or can be by the half transmitting metal material (half transmitting of such as magnesium (Mg), silver-colored (Ag) or the alloy of magnesium (Mg) and silver-colored (Ag)
Conductive material) formed.Coating can be set in first electrode 282.
Then, mask 140 (S2502) is set on cushion 130.In more detail, as shown in Figure 26 F, mask 140 exists
It is arranged on while contact with upper cushion 1302 on upper cushion 1302.
Hereafter, inoranic membrane is configured to covering display area (DA) (S2503).
As shown in Figure 26 G, the first inoranic membrane 291,292 and second inoranic membrane 293 of organic film are set.In more detail, first
Inoranic membrane 291 is configured to covering display area (DA).In this case, the first inoranic membrane 291 passes through CVD method or ALD
Method is formed in the remaining area in addition to the region with mask 140.First inoranic membrane 291 can by silicon nitride,
Aln precipitation, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, Si oxide, aluminum oxide or titanium oxide shape
Into.
Then, organic film 292 is configured to the first inoranic membrane 291 of covering, without covering dam 120.Organic film 292 can be with
By being transmissive to from luminous such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin
The 99% of light or more than 99% organic material that layer 283 is sent are formed.
Then, the second inoranic membrane 293 is configured to covering organic film 292.In this case, the second inoranic membrane 293 is logical
Cross CVD method or ALD methods are arranged in the remaining area in addition to the region with mask 140.Second inoranic membrane 293
Can be by silicon nitride, aln precipitation, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, Si oxide, alumina
Thing or titanium oxide are formed.
As shown in Figure 26 G, 292 and second inoranic membrane 293 of organic film is arranged on the first inoranic membrane 291.According to the present invention
Another example, 292 and second inoranic membrane 293 of organic film can be not provided with.In addition, if organic film 292 is formed to include
Two layers of double-decker, then can be inserted into the 3rd inoranic membrane (not shown) between this two layers of organic film 292.
Then, mask 140 (S2504) is removed.In more detail, as shown in Figure 26 H, removal is arranged on cache layer 1302
On mask 140.In more detail, after the mask 140 being arranged on cushion 1302 is removed, although being not shown,
First substrate 111 and second substrate 112 are engaged with each other.If manufacturing multiple display devices at the same time by using a mother substrate,
Line processing is then carried out so that multiple display panels on mother substrate are divided into multiple display devices.In each adjacent display
Between panel formed line (SL), and along line (SL) carry out cutting process so that by by multiple display panels each other
Separate to obtain display device.
According to the embodiment of the present invention, come not set the first inoranic membrane in line (SL) by using cushion 130
291 and second inoranic membrane 293.Accordingly it is possible to prevent for line processing in the first inoranic membrane 291 and the second inoranic membrane 293
It is cracked.Accordingly it is possible to prevent the deterioration of luminescent device 280.
Figure 27 is the flow chart for the method for illustrating the display device for being used to manufacture second embodiment of the present invention.Figure 28 A
It is the sectional view for the method for illustrating the display device for being used to manufacture second embodiment of the present invention to Figure 28 L.
First, pixel (P) is formed in display area (DA), and the first buffering is formed in non-display area (NDA)
Layer 132 and second buffer layer 134 (S2701).
In more detail, as shown in Figure 28 A, TFT substrate 200 is prepared, and protective film 250 is formed in TFT substrate 200.
Protective film 250 is used as dielectric film.Protective film 250 can be formed such as Si oxide (SiOx) or silicon nitride (SiNx)
The single layer structure of such inorganic insulating material or the multilayer of above-mentioned Si oxide (SiOx) and silicon nitride (silicon nitride)
Structure.
As shown in Figure 28 B, there is provided flatted membrane 260, dam 120, the first bottom breaker 1321 and the second bottom breaker
1341.In more detail, flatted membrane 260, dam 120, the first bottom breaker 1321 and second time buffering are set on protective film 250
Layer 1341.In this case, the first bottom breaker 1321 and delay for second time that dam 120 is arranged in non-display area (NDA)
Rush between layer 1341.In non-display area (NDA), the first bottom breaker 1321 is arranged between dam 120 and flatted membrane 260.
Second bottom breaker 1341 is arranged on the periphery on the dam 120 in non-display area (NDA).
Each in flatted membrane 260, dam 120, the first bottom breaker 1321 and the second bottom breaker 1341 can be by example
Such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin organic material organic film shape
Into.
In Figure 28 B, there is provided dam 120.Another example according to the present invention, it is convenient to omit dam 120.
Figure 28 B show while manufacture dam 120 and flatted membrane 260.Another example according to the present invention, dam 120 can be with
Protective film 250 or dike 284 manufacture together.
As shown in fig. 28 c, it is arranged to exposed film crystalline substance through the contact hole of protective film 250 and flatted membrane 260 (CH3)
The source electrode of body pipe 210 or drain electrode, and form second electrode 281.Second electrode 281 can be by the metal with high reflectance
Material is formed, more specifically, being formed as the deposition structure of deposition structure (Ti/Al/Ti), aluminium and the indium tin oxide of aluminium and titanium
(ITO/AL/ITO), the deposition structure (ITO/APC/ITO) of APC alloys and APC alloys and indium tin oxide.Here, APC is closed
Gold is the alloy of silver-colored (Ag), palladium (Pd) and copper (Cu).
As shown in fig. 28d, cushion 1342 on cushion 1322 and second is set on dike 284, first.In more detail, dike
284 are configured to the edge of the second electrode 281 on covering flatted membrane 260, so as to divide light-emitting zone (EA).Then, first
Upper cushion 1322 is arranged on the first bottom breaker 1321, and cushion 1342 is arranged on the second bottom breaker on second
On 1341.
Each on dike 284, first on cushion 1322 and second in cushion 1342 can be by such as acrylic acid tree
The organic film of the organic material of fat, epoxy resin, phenolic resin, polyamide, polyimide resin etc. is formed.
As shown in Figure 28 E, luminescent layer 283 and first electrode 282 are set.In more detail, luminescent layer 283 is arranged on second
On electrode 281 and dike 284.Then, first electrode 282 is arranged on luminescent layer 283.First electrode 282 can be by such as indium tin
Transparent metal material (transparent conductive material, TCO) shape for being transmissive to light of oxide (ITO) or indium-zinc oxide (IZO)
Into, or can be by the half transmitting metal material (half transmitting of such as magnesium (Mg), silver-colored (Ag) or the alloy of magnesium (Mg) and silver-colored (Ag)
Conductive material) formed.Coating can be set in first electrode 282.
Then, the first mask 142 (S2702) is set in first buffer layer 132.In more detail, as shown in Figure 28 F, the
One mask 142 is arranged on first while being contacted with cushion on first 1322 on cushion 1322.
Hereafter, the first inoranic membrane 291 is set to cover display area (DA) (S2703).
As shown in Figure 28 G, the first inoranic membrane 291 is set.In more detail, the first inoranic membrane 291 is set to cover viewing area
Domain (DA).In this case, the first inoranic membrane 291 is formed in except with the first mask by CVD method or ALD methods
In remaining area outside 142 region.First inoranic membrane 291 can be by silicon nitride, aln precipitation, zirconium nitride, titanium nitrogen
Compound, hafnium nitride, tantalum nitride, Si oxide, aluminum oxide or titanium oxide are formed.
Then, the first mask 142 (S2704) is removed.In more detail, first be arranged in first buffer layer 132 is removed
Mask 142, as shown in Figure 28 H.In addition, as shown in Figure 28 H, organic film 292 is configured to the first inoranic membrane 291 of covering, without
Cover dam 120.Organic film 292 can be sub- by such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyamides
The 99% of the light for being transmissive to send from luminescent layer 283 or more than 99% organic material of polyimide resin etc. are formed.
In Figure 28 I, organic film 292 is arranged on the first inoranic membrane 291.Another example according to the present invention, can not
Organic film 292 is set.
Then, the second mask 144 is arranged in second buffer layer 134 (S2705).In more detail, as shown in Figure 28 J, the
Two masks 144 are arranged on second while being contacted with cushion on second 1342 on cushion 1342.In such case
Under, the area of the second mask 144 is more relatively smaller than the area of the first mask 142 so that the second inoranic membrane 293 to the first is inorganic
Film 291 is with respect to bigger.
Then, the second inoranic membrane 293 is arranged on the first inoranic membrane 291 (S2706).In more detail, as shown in Figure 28 K,
Second inoranic membrane 293 is arranged to cover organic film 292.In this case, the second inoranic membrane 293 by CVD method or
ALD methods are arranged in the remaining area in addition to the region with the second mask 144.Second inoranic membrane 293 can be by silicon
Nitride, aln precipitation, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, Si oxide, aluminum oxide or titanyl
Compound is formed.
Then, the second mask 144 (S2707) is removed.In more detail, as shown in Figure 28 L, removal is arranged on the second buffering
The second mask 144 on layer 134.Although being not shown, but first substrate 111 and second substrate 112 are engaged with each other.It is if logical
Cross and manufacture multiple display devices at the same time using a mother substrate, then carry out line processing with by multiple display surfaces on mother substrate
Plate is divided into multiple display devices.Between each adjacent display panel formed line (SL), and along line (SL) into
Row cutting process, so as to obtain display device by the way that multiple display panels are separated from each other.
8th embodiment
Figure 29 is the plan for the first substrate for illustrating the 8th embodiment according to the present invention.Figure 30 is along Figure 29
III-III ' sectional view.Figure 31 is the sectional view along the II-II ' of Figure 29.
With reference to Figure 29 to Figure 31, first substrate 111 is divided into display area (DA) and non-display area (NDA).
In display area (DA), exist for showing the pixel of image (P).Each in pixel (P) can include
Thin film transistor (TFT) 210, luminescent device 280 and auxiliary electrode 215.Luminescent device 280 includes second electrode 281, luminescent layer 283
With first electrode 282.If gating signal is supplied to each pixel (P) from select lines by using thin film transistor (TFT) 210,
Scheduled current is then supplied to by luminescent device 280 according to the data voltage of data cable.Therefore, shining for each pixel (P)
Device 280 can be shone with the predetermined luminance according to scheduled current.
In non-display area (NDA), there is the welding disking area (PA) with pad, dam 120, cushion 130 and auxiliary
Help cushion 180.
Welding disking area (PA) can be arranged on a peripheral side of first substrate 111.Welding disking area (PA) includes multiple welderings
Disk, and multiple pads are electrically connected by using anisotropic conductive film (ACF) with the circuit of flexible membrane.
Dam 120 can include the first dam 122 and the second dam 121.First dam 122 and the second dam 121 surround display area
(DA), at least one flowing for preventing organic film 292 and in the first dam 122 and the second dam 121.In addition, the first dam 122
And second dam 121 be arranged between display area (DA) and welding disking area (PA), so as to prevent the encapsulating film 290 of pixel (P)
Organic film 292 spills into welding disking area (PA) and in welding disking area (PA).
Cushion 130 is located in non-display area (NDA), and be arranged to and display area (DA) be separated by it is predetermined between
Every.For example, cushion 130 can be arranged between display area (DA) and welding disking area (PA), and cushion 130 can be with
Protect for the circuit that the pad (PAD) of welding disking area (PA) is connected with the pixel (P) of display area (DA) from electrostatic
Influence.In addition, cushion 130 can be supported for forming the first inoranic membrane 291 or the second nothing that are included in encapsulating film 290
The mask equipment of machine film 293.
Auxiliary cushion 180 is located in non-display area (NDA), and is arranged to be separated by with display area (DA) pre-
Fixed interval.For example, auxiliary cushion 180 can be located in non-display area (NDA), and it could be provided as the with dam 120
Two dams, 121 every predetermined interval.In addition, auxiliary cushion 180 can be supported for forming be included in encapsulating film 290 the
The mask equipment of one inoranic membrane 291 or the second inoranic membrane 293.
Hereinafter, by reference Figure 30 and Figure 31 in the display area (DA) of the 8th embodiment according to the present invention
Pixel, dam 120, cushion 130 and aid in cushion 180 structure be described.
Figure 30 is the sectional view along the III-III ' of Figure 29.Figure 30 is dam 120 and the cushion shown in non-display area
130 and display area (DA) pixel (P) an exemplary sectional view.
Reference Figure 30, thin film transistor (TFT) 210 and luminescent device 280 can be formed in the first base in display area (DA)
On one surface of plate 111.
Buffer film 231 is arranged on first substrate 111, so that protective film transistor 210 is from penetrating through Yi Shoutou
The influence of the moisture of the first substrate 111 of moist influence.
Each thin film transistor (TFT) 210 includes active layer 211, grid 212, source electrode 213 and drain electrode 214.It is thin in Figure 30
Film transistor 210 is arranged with the top gate type that grid 212 is located at the top of active layer 211, but not limited to this type.It is for example, thin
Film transistor 210 could be provided as wherein grid 212 be located at the lower section of active layer 211 bottom gate type or grid 212 positioned at active
The double grid type of the two above and below layer 211.
Active layer 211 is arranged on the buffer film 231 of first substrate 111.Active layer 211 can be by silicon-based semiconductor material
Material or oxide based superconductor material are formed.Light shield layer can be set on first substrate 111, to stop that incidence of external light exists
On active layer 211.
Gate insulating film 230 can be arranged on active layer 211.Gate insulating film 220 can be formed as such as Si oxide
(SiOx) or inorganic insulating material as silicon nitride (SiNx) single layer structure, or above-mentioned Si oxide (SiOx) and silicon
The sandwich construction of nitride (SiNx).
Grid 212 can be arranged on gate insulating film 230.Grid 212 can be formed as molybdenum (Mo), aluminium (Al), chromium
(Cr), the single layer structure or sandwich construction of golden (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and its alloy, but be not limited to
These materials.
Interlayer insulating film 240 can be arranged on grid 212.Interlayer insulating film 240 can be formed as such as Si oxide
(SiOx) or the single layer structure of inorganic insulating material as silicon nitride (SiNx) or above-mentioned Si oxide (SiOx), silicon
The sandwich construction of nitride (SiNx) and its alloy.
Source electrode 213 and drain electrode 214 can be arranged on interlayer insulating film 240.Source electrode 213 and each in drain electrode 214
It can be connected via through the contact hole of gate insulating film 230 and interlayer insulating film 240 (CH1, CH2) with active layer 211.Source electrode
213 can be formed as molybdenum (Mo), aluminium (Al), chromium (Cr), golden (Au), titanium (Ti), nickel (Ni), neodymium with each in drain electrode 214
(Nd), the single layer structure or sandwich construction of copper (Cu) and its alloy, but it is not limited to these materials.
Protective film 250 can be arranged on thin film transistor (TFT) 210.Protective film 250 may be used as dielectric film.Protective film 250
It can be formed as the single layer structure of inorganic insulating material as such as Si oxide (SiOx) or silicon nitride (SiNx), or
Above-mentioned Si oxide (SiOx) and the sandwich construction of silicon nitride (SiNx).
First flatted membrane 261 can be set on protective film 250, so that the step difference as caused by thin film transistor (TFT) 210
Region is smooth.First flatted membrane 261 can be by such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyamides
The organic film of the organic material of imide resin etc. is formed.
Auxiliary electrode 215 can be formed on the first flatted membrane 261, drain electrode 214 and second electrode 281 is electric each other
Connection.Auxiliary electrode 215 can be connected via the contact hole through the first flatted membrane 261 and protective film 250 with drain electrode 214.It is auxiliary
Help electrode 215 can be formed as molybdenum (Mo), aluminium (Al), chromium (Cr), golden (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and
The single layer structure or sandwich construction of its alloy, but it is not limited to these materials.
Second flatted membrane 262 can be formed on auxiliary electrode 215.Second flatted membrane 262 can be by such as acrylic acid tree
The organic film of the organic material of fat, epoxy resin, phenolic resin, polyamide, polyimide resin etc. is formed.
Luminescent device 280 and dike 284 are arranged on the second flatted membrane 262.Luminescent device 280 can include first electrode
282nd, luminescent layer 283 and second electrode 281.First electrode 282 may be used as cathode, and second electrode 281 may be used as anode.
The deposition region of first electrode 282, luminescent layer 283 and second electrode 281 can be defined as light-emitting zone (EA).
Second electrode 281 can be arranged on the second flatted membrane 262.Second electrode 281 can be via smooth through second
The contact hole of film 262 is connected with the drain electrode 214 of thin film transistor (TFT) 210.Second electrode 281 can be by the gold with high reflectance
Belong to material to be formed, and more specifically, be formed as the heavy of deposition structure (Ti/Al/Ti), aluminium and the indium tin oxide of aluminium and titanium
Product structure (ITO/AL/ITO), APC alloys and the deposition structure (ITO/APC/ITO) of APC alloys and indium tin oxide.This
In, APC alloys are the alloys of silver-colored (Ag), palladium (Pd) and copper (Cu).
Dike 284 is disposed over the edge of the second electrode 281 on the second flatted membrane 262, thus divides light-emitting zone
(EA).Dike 284 can be by such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin
The organic film of organic material is formed.
Interval body 285 can be arranged on dike 284.Interval body 285 and dike 284 can be formed from the same material.
Luminescent layer 283 is arranged on second electrode 281, dike 284 and interval body 285.Luminescent layer 283 can include hole
Transport layer, at least one luminescent layer and electron transfer layer.In this case, if to second electrode 281 and first electrode
282 apply voltage, then hole and electronics are moved to luminescent layer via hole transmission layer and electron transfer layer respectively, are then sending out
Photosphere is compound each other, so as to shine.
First electrode 282 is arranged on luminescent layer 283.If OLED device is formed as top emission type, first electrode
282 can be (transparent by the transparent metal material for being transmissive to light of such as indium tin oxide (ITO) or indium-zinc oxide (IZO)
Conductive material, TCO) formed, or can be by the half transmitting of such as magnesium (Mg), silver-colored (Ag) or the alloy of magnesium (Mg) and silver-colored (Ag)
Metal material (half transmitting conductive material) formation.Coating can be set in first electrode 282.
Encapsulating film 290 is set on luminescent device 280.Encapsulating film 290 prevents moisture or oxygen from penetrating into first electrode
In 282.For this reason, encapsulating film 290 can include at least one inoranic membrane and at least one organic film.
For example, encapsulating film 290 can include the first inoranic membrane 291,292 and second inoranic membrane 293 of organic film.This
In the case of, the first inoranic membrane 291 covering first electrode 282, and organic film 292 is arranged on the first inoranic membrane 291.It is preferred that
Ground, organic film 292 can be formed as being enough to prevent particle from entering luminescent layer 283 and first electrode by the first inoranic membrane 291
282 thickness.Second inoranic membrane 293 covers organic film 292.
With reference to Figure 30, there is the encapsulating film 290 being formed on the first substrate 111 of non-display area (NDA), 120 and of dam
Cushion 130.
Encapsulating film 290 covers the luminescent device 280 being arranged in display area (DA), so as to prevent oxygen or moisture from oozing
Thoroughly into luminescent device 280.In this case, encapsulating film 290 can include at least one inoranic membrane and at least one organic
Film.For example, encapsulating film 290 can include the first inoranic membrane 291,292 and second inoranic membrane 293 of organic film.In such case
Under, the first inoranic membrane 291 covering first electrode 282, organic film 292 is arranged on the first inoranic membrane 291, and second is inorganic
Film 293 covers organic film 292.
Each in first inoranic membrane 291 and the second inoranic membrane 293 can be nitrogenized by silicon nitride, aln precipitation, zirconium
Thing, titanium nitride, hafnium nitride, tantalum nitride, Si oxide, aluminum oxide or titanium oxide are formed.First inoranic membrane 291
It can be deposited with the second inoranic membrane 293 by chemical vapor deposition (CVD) method or atomic layer deposition (ALD) method, but it is unlimited
In this method.
Organic film 292 can be formed by the transparent material for the light for being transmissive to launch from luminescent layer 283.Organic film 292 can
With by being transmissive to such as acrylic resin, epoxy resin, phenolic resin, polyamide, polyimide resin from hair
At least 99% organic material of the light that photosphere 283 is launched is formed.Organic film 292 can be by the processing (example using organic material
Such as, vapour deposition process, Method of printing or slot coated method) formed, but it is not limited to these methods.Organic film 292 can pass through
Inkjet process is formed.
Dam 120 is set with around the periphery of display area (DA), so as to prevent the organic film 292 for encapsulating film 290 from overflowing
Go out.The organic film 292 of encapsulating film 290 has good coverage property and the barrier properties of difference, and thus organic film 292 must quilt
Second inoranic membrane 293 encapsulates.However, if organic film 292 flows out desired region, organic film 292 is not by the second inoranic membrane
293 encapsulation, thus oxygen or moisture infiltration pass through exposed organic film 292.In order to overcome this problem, set dam 120 to prevent
Only organic film 292 overflows, so as to prevent organic film 292 to be exposed to the outside of display device.
In addition, dam 120 is arranged between display area (DA) and welding disking area (PA) so that can prevent encapsulating film 290
Organic film 292 overflow, more specifically, can prevent organic film 292 flow into welding disking area (PA).If encapsulating film 290 has
Machine film 292 flows into welding disking area (PA), then is difficult to be fitted in pad since organic film 292 flows into welding disking area (PA)
When electrical contact, be thus likely to occur driving defect or illumination check defect.In order to overcome this problem, there is provided dam 120
To prevent the organic film 292 of encapsulating film 290 from overflowing, thus to prevent organic film 292 from flowing into welding disking area (PA).
As shown in figure 30, dam 120 can include the first dam 122 and be arranged to 122 every predetermined interval of the first dam the
Two dams 121.First dam 122 is arranged in non-display area (NDA) and is disposed about the external zones of display area (DA)
Domain.Second dam 121 be arranged to 122 every predetermined interval of the first dam, and be arranged about the first dam 122.First dam
122 prevent the organic film 292 of encapsulating film 290 from overflowing.If organic film 292 flows out the first dam 122, it is separated by with the first dam 122
The second dam 121 that predetermined space is set prevents the flowing of organic film 292.
First dam 122 and the second dam 121 can be formed as single layer structure, it includes the second flatted membrane for pixel (P)
262nd, at least one of material of dike 284 and interval body 285 material, or including the second flatted membrane for pixel (P)
262nd, the sandwich construction of at least two materials in the material of dike 284 and interval body 285.For example, as shown in figure 30, if the
Each in one dam 122 and the second dam 121 is formed as including lower floor 121c and 122c, intermediate layer 121b and 122b, Yi Jishang
The three-decker of layer 121a and 122a, then it can be including the second flatted membrane 262, dike 284 and the interval body 285 with pixel (P)
Material identical material.Lower floor 121c and 122c in each in first dam 122 and the second dam 121 can by with picture
The material of the material identical of second flatted membrane 262 of plain (P) is formed, under each in the first dam 122 and the second dam 121
Intermediate layer 121b and 122b on layer 121c and 122c can be formed by the material of the material identical of the dike 284 with pixel (P),
The upper strata 121a and 122a on intermediate layer 121b and 122b in each in first dam 122 and the second dam 121 can by with
The material of the material identical of the interval body 285 of pixel (P) is formed, but is not limited to the structure.For example, the first dam 122 can be formed
For material and pixel (P) dike 284 and interval body 285 material identical deposition structure, and the second dam 121 can be with shape
As material and the second flatted membrane 262, the deposition structure of the material identical of dike 284 and interval body 285.On the other hand, the first dam
122 can be formed by the material of the material identical of the dike 284 with pixel (P), dam 121 can with it is the second of pixel (P) smooth
The deposition structure of the material of the material identical of film 262 and dike 284 is formed.
Cushion 130 can be arranged in non-display area (NDA), and could be provided as with dam 120 be separated by it is predetermined between
Every.Cushion 130 supports mask so that for the first inoranic membrane 291 of deposition or the second inoranic membrane 293 processing by mask
Remain and 111 every predetermined interval of first substrate.For this reason, mask is arranged on cushion while being contacted with cushion 130
On 130.
As shown in Figure 29 and Figure 30, cushion 130 can be arranged between welding disking area (PA) and display area (DA).
For example, cushion 130 is arranged between second dam 121 on dam 120 and welding disking area (PA), so that the first nothing can be prevented
291 or second inoranic membrane 293 of machine film is formed in welding disking area (PA).It is used in addition, cushion 130 can be protected by pad
The circuit (VAL1, VAL2) that the pad (PAD) in region (PA) is electrically connected with the pixel (P) of display area (DA) is from electrostatic shadow
Ring.
With reference to Figure 30, cushion 130 can include first buffer layer 136 and second buffer layer 138.First buffer layer 136
And second buffer layer 138 can be arranged between welding disking area (PA) and dam 120.First buffer layer 136 can be arranged on and be supplied
Since answering in the first power supply auxiliary line (VAL1) of the supply voltage of the pad (PAD) of self-brazing disk area (PA), or it can set
Put on the first data-link route of the data-signal of self-brazing pad (PAD) since being supplied.
In this case, the first power supply auxiliary line (VAL1) or the first data-link route can be arranged on first substrate
On 111, and first buffer layer 136 can be arranged on the first power supply auxiliary line (VAL1) or the first data-link route.First electricity
Source auxiliary line (VAL1) and the first data-link route can be by forming with source electrode 213 and 214 identical materials of drain electrode.Protective film
250 can be arranged between the first power supply auxiliary line (VAL1)/first data-link route and first buffer layer 136, wherein protecting
Film 250 is around both side surfaces and upper surface of the first power supply auxiliary line (VAL1) and the first data-link route.
Second source auxiliary line (VAL2) or the second data-link route, and can be set in first buffer layer 136
Two power supply auxiliary lines (VAL2) and the second data-link route can be by the materials of the material identical of the auxiliary electrode 215 with pixel (P)
Material is formed.Second source auxiliary line (VAL2) or the second data-link route can be via through first buffer layer 136 and protective films
250 contact hole connection.
Second buffer layer 138 can be arranged on be supplied since self-brazing disk area (PA) pad (PAD) supply voltage
Second source auxiliary line (VAL1) on, or can be arranged on be supplied since self-brazing pad (PAD) data-signal second
On data-link route.
The first inoranic membrane 291 and the second inoranic membrane 292 included in encapsulating film 290 can cover second buffer layer 138
Upper surface predetermined portions.
Cushion 130 can protect the first power supply auxiliary line (VAL1), second source auxiliary line (VAL2), the first data
From electrostatic influence, these circuits are provided for the pad of welding disking area (PA) for chain line and the second data-link route
(PAD) it is electrically connected with the pixel (P) of display area (PA).For example, cushion 130 can be prevented for forming encapsulating film 290
Electric fault (arcing problems) occurs for processing.
The auxiliary cushion 180 of the 8th embodiment according to the present invention will be described in detail with reference to Figure 31.Figure 31 is along figure
The sectional view of 29 II-II '.Figure 31 is to show that one of auxiliary cushion 180 and dam 120 in non-display area (NDA) is shown
The sectional view of example.The detailed description with the same parts of Figure 30 will be omitted.
With reference to Figure 31, the first dam 122 and the second dam 121 for forming dam 120 are arranged in non-display area (NDA).Such as figure
Shown in 29, the first dam 122 and the second dam 121 are arranged in non-display area (NDA), and are arranged to and display area
(DA) every predetermined interval.First dam 122 is arranged in non-display area (NDA), and is arranged about display area (DA)
Outer peripheral areas.Second dam 121 be arranged to 122 every predetermined interval of the first dam, and be arranged about the first dam 122.
First dam 122 prevents the organic film 292 of encapsulating film 290 from overflowing.If organic film 292 flows out the first dam 122, it is arranged to
The flowing of organic film 292 is prevented with the second dam 121 of 122 every predetermined interval of the first dam.
In the side of display area (DA), the first power supply auxiliary line (VAL1) can be with insulating layer 240 formed between.
Second source auxiliary line (VAL2) and the first power supply auxiliary line (VAL1) of the lower section of protective film 250 is arranged on via through protection
The contact hole connection of film 250.Second source auxiliary line (VAL2) can be overlapped with the lower surface of the lower floor 122a on the first dam 122.
The 3rd power supply power supply auxiliary line (VAL3) being formed on the second flatted membrane 262 passes through for smooth on the first dam 122 and first
The opening of exposure second source auxiliary line (VAL2) and the second electricity in region between the end of 261 and second flatted membrane 262 of film
Source auxiliary line (VAL2) connects.3rd power supply auxiliary line (VAL3) can be handed over the upper surface of the lower floor 122a on the first dam 122
It is folded.
First power supply auxiliary line (VAL1) can be formed by the source electrode 213 with pixel (P) and 214 identical materials of drain electrode.
Second source auxiliary line (VAL2) can be formed by the material identical with the auxiliary electrode 215 of pixel (P).3rd power supply aids in
Line (VAL3) can be formed by the material identical with the second electrode 291 of pixel (P).
Auxiliary cushion 180 can be arranged in non-display area (NDA), and could be provided as second with dam 120
121 every predetermined interval of dam.Cushion 180 is aided in support mask, so that inorganic for the first inoranic membrane 291 or the second of deposition
The processing of film 293 remains mask and 111 every predetermined interval of first substrate.For this reason, mask is with aiding in cushion 180
It is arranged on while contact on auxiliary cushion 180.
Mask (not shown) is arranged in auxiliary cushion 180 on after, deposit on it the first inoranic membrane 291 or
Second inoranic membrane 293, thus forms the first inoranic membrane 291 or the on the remaining area in addition to the region with mask
Two inoranic membranes 293.For example, auxiliary cushion 180 prevents from forming the first nothing in the region between mask and first substrate 111
291 or second inoranic membrane 293 of machine film, so as to prevent the first inoranic membrane 291 or the second inoranic membrane 293 to be penetrated into mask
Region in.Therefore, auxiliary cushion 180 is arranged between dam 120 and line (SL), and mask and auxiliary cushion 180
Second buffer layer contact so that the first inoranic membrane 291 or the second inoranic membrane 293 can be prevented to be formed in auxiliary cushion
In 180 periphery (for example, line (SL)).Therefore, the first inoranic membrane 291 or the second inoranic membrane 292 can be with aiding in cushion
The upper surface portion of 180 the second auxiliary cushion overlaps.
As shown in figure 29, auxiliary cushion 180 can be arranged to around at least three sides of display area (DA).
For example, auxiliary cushion 180 can be arranged to around except being provided with cushion 130 a side of display area (DA)
Three sides outside side.Therefore, the first dam 122 is arranged in non-display area (NDA), and is disposed about showing
Region (DA).Second dam 121 be arranged to 122 every predetermined interval of the first dam, and be arranged to around the first dam 122.
In region between the second dam 121 and welding disking area (PA), cushion 130 is towards in four sides of display area (DA)
A side.Aid in cushion 180 can be around display area (DA) in addition to a side towards cushion 130
Three sides.In four sides on second dam 121 on the first dam 122, three sides on the second dam 121 can be set
Put display area (DA) and auxiliary cushion 180 between, and side of the residue on the second dam 121 can be arranged on it is aobvious
Show between region (DA) and cushion 130.
With reference to Figure 31, auxiliary cushion 180 can include the first auxiliary cushion 180a being arranged on protective film 250
With the second auxiliary cushion 180b being arranged on the first auxiliary cushion 180a.
First auxiliary cushion 180a can be formed by the material identical with the dike 284 of pixel (P), and the second auxiliary
Cushion 180b can be formed by the material identical with the interval body 285 of pixel (P).
If two sides of display device are all bent, there may be crackle in cushion 180 is aided in.In order to anti-
The only crackle in display area (DA), can pass through the auxiliary cushions of auxiliary cushion 180a and second of patterning first 180b
To form groove.For example, can by remove the second auxiliary cushion 180b, the first auxiliary cushion 180a, protective film 250,
Intermediate insulating layer 240, gate insulating film 230 and cushion form the groove for exposing first substrate 111, it is possible thereby to will
Groove is known as anticracking groove.
Embodiments of the present invention can be described as follows.
Display device according to the embodiment of the present invention can include：With display area and for around display area
Non-display area substrate, display area has pixel；Encapsulating film with the inoranic membrane for covering display area；With
And cushion, the cushion are contacted with inoranic membrane, wherein cushion is arranged in non-display area and is arranged to and viewing area
Domain every predetermined interval.
According to the embodiment of the present invention, encapsulating film can include the first inoranic membrane, the organic film on the first inoranic membrane and
For covering the second inoranic membrane of organic film.Cushion can with it is at least one in the first inoranic membrane and the second inoranic membrane
EDGE CONTACT.
According to the embodiment of the present invention, one kind can be in addition provided to be arranged in non-display area and be arranged around showing
Show region to prevent the dam of organic film flowing.
According to the embodiment of the present invention, the height of cushion can be more than the height on dam.
According to the embodiment of the present invention, cushion can be arranged on the periphery on dam.
According to the embodiment of the present invention, each pixel can include first electrode, the luminescent layer in first electrode and
Second electrode on luminescent layer, and cushion can be arranged between dam and pixel, and can not be handed over second electrode
It is folded.
According to the embodiment of the present invention, cushion can include the first buffer layer being arranged between dam and pixel, with
And it is arranged on the second buffer layer of dam periphery.
According to the embodiment of the present invention, first buffer layer can be with the EDGE CONTACT of the first inoranic membrane, and second is slow
Rushing layer can be with the EDGE CONTACT of the second inoranic membrane.
According to the embodiment of the present invention, cushion can be arranged about display area.
According to the embodiment of the present invention, inoranic membrane can cover the predetermined portions of the upper surface of cushion.
According to the embodiment of the present invention, non-display area can include the welding disking area with pad, and dam can be set
Between display area and welding disking area, and cushion can be arranged between dam and welding disking area.
According to the embodiment of the present invention, the first power supply auxiliary line of the voltage of self-brazing pad since being supplied may be present, and
And cushion can be arranged in the first power supply auxiliary line.
According to the embodiment of the present invention, cushion can include the 4th buffering on three buffer layer and three buffer layer
Layer.
According to the embodiment of the present invention, there may be and be arranged between three buffer layer and the 4th cushion and pass through
The second source auxiliary line being electrically connected through the contact hole of three buffer layer with the first power supply auxiliary line.
According to the embodiment of the present invention, cushion can be provided with anticracking groove.
According to the embodiment of the present invention, cushion can be formed by organic material.
According to the embodiment of the present invention, cushion can be formed by multiple island-shaped patterns.
According to the embodiment of the present invention, the second inoranic membrane can be arranged on the periphery of first buffer layer.
The method for being used to manufacture display device according to the embodiment of the present invention can include：In the display area of substrate
Upper formation pixel, forms cushion on non-display area, by mask-placement on the buffer layer, and is used to cover being formed
Mask is removed after the inoranic membrane of display area.
According to the embodiment of the present invention, arranging can include making cushion contact with mask the step of mask.
According to the embodiment of the present invention, arrangement mask can be included to expose the upper table of cushion the step of mask by arranging
The predetermined portions in face.
According to the embodiment of the present invention, it is additionally may included in the step of formation cushion on non-display area non-display
Dam is formed in region.
According to the embodiment of the present invention, the height of cushion can be more than the height on dam.
According to the embodiment of the present invention, cushion can be arranged on the periphery on dam.
One or more embodiments according to the present invention, cushion are arranged between non-display area and line, and
And mask is set on the buffer layer for depositing the processing of inoranic membrane, so that inoranic membrane can be prevented to be formed in line.
It is cracked in inoranic membrane therefore, it is possible to prevent from handling for line, so as to improve the yield and reliability of display device.
In addition, cushion is arranged in non-display area, so that can make the side of moisture or oxygen by display device
The infiltration on surface reduces, so as to improve the life and reliability of display device.
In addition, the height of cushion is more than the height on dam, mask is set on the buffer layer so that can make to be directed to
The damage to dam is handled to reduce.Accordingly it is possible to prevent moisture or oxygen are penetrated into organic film by the dam of damage.
In addition, cushion is formed by multiple island-shaped patterns, so that can subtract the increase of the stress in non-display area
It is small.
In addition, cushion not with electrode crossover so that setting processing on the buffer layer to electrode for by mask
Damage reduces.Accordingly it is possible to prevent the defects of being caused by the electrode damaged.
Since there is provided first buffer layer and second buffer layer, the first inoranic membrane and the second inoranic membrane are with different from each other
Size, so that the first inoranic membrane and organic film is completely covered in the second inoranic membrane, so as to prevent the infiltration of moisture or oxygen.
In addition, cushion is with the material of at least one material identical in flatted membrane and dike by forming, so that being not required to
The additional manufacture of cushion is wanted to handle.
In addition, cushion is arranged on the power supply auxiliary line for supply voltage to be supplied to power cord.Therefore, even if
For deposition the first inoranic membrane or the second inoranic membrane processing in the edge of mask moment have accumulated substantial amounts of electric charge, also may be used
To prevent the electrostatic between mask and power supply auxiliary line by cushion.
In addition, cushion is provided with least one groove for being used to expose protective film, so that can prevent exterior wet
Gas or oxygen penetrate into inside.
Due to being additionally provided in second source auxiliary line in the first power supply auxiliary line by using cushion, can increase
The cross-sectional area of power supply auxiliary line.Finally, the stable supplying of power supply can be realized by reducing resistance.
Those skilled in the art will be apparent that the situation of the spirit or scope of the present invention can not departed from
Under various modifications and change are carried out to the present invention.Therefore, it is contemplated that the covering present invention fall in appended claim and
Modifications and changes in the range of its equivalent.
Cross reference to related applications
The korean patent application No.10-2017-0053936 that is submitted this application claims on April 26th, 2017,2016 years 10
The korean patent application No.10-2016-0142945 and the Korean Patent submitted on October 16th, 2017 that the moon is submitted on the 31st
Apply for the rights and interests of No.10-2017-0133749, these korean patent applications are incorporated into herein, such as whole by quoting
Statement is the same herein.
Claims (26)
1. a kind of display device, which includes：
Substrate, which, which has, is provided with the display area of pixel and the non-display area around the display area；
Encapsulating film, the encapsulating film cover the display area and including inoranic membranes；And
Cushion, the cushion be arranged on the display area every predetermined interval in the non-display area and with
The EDGE CONTACT of the inoranic membrane.
2. display device according to claim 1, wherein, the encapsulating film includes：
First inoranic membrane, first inoranic membrane are used to cover the display area；
Organic film, the organic film are arranged on first inoranic membrane；And
Second inoranic membrane, second inoranic membrane are used to cover the organic film,
Wherein, the cushion and at least one EDGE CONTACT in first inoranic membrane and second inoranic membrane.
3. display device according to claim 2, which further includes dam, which is arranged on the non-display area
In with around the display area, wherein, the dam prevents the organic film from overflowing.
4. display device according to claim 3, wherein, the height of the cushion is more than the height on the dam.
5. display device according to claim 3, wherein, the cushion is arranged on the periphery on the dam.
6. display device according to claim 3,
Wherein, each pixel in the pixel includes first electrode, sets luminescent layer on the first electrode and set
Second electrode on the light-emitting layer, and
The cushion is arranged between the dam and the pixel, and the cushion is not overlapped with the second electrode.
7. display device according to claim 3, wherein, the cushion includes：
First buffer layer, the first buffer layer are arranged between the dam and the pixel；And
Second buffer layer, the second buffer layer are arranged on the periphery on the dam.
8. display device according to claim 7, wherein, the first buffer layer and the edge of first inoranic membrane connect
Touch, and the second buffer layer and the EDGE CONTACT of second inoranic membrane.
9. display device according to claim 1, wherein, the cushion is provided about the display area.
10. display device according to claim 1, wherein, the inoranic membrane covers the one of the upper surface of the cushion
A little regions.
11. display device according to claim 3,
Wherein, the non-display area includes the welding disking area with pad, and
Wherein, the dam is arranged between the display area and the welding disking area, and the cushion be arranged on it is described
Between dam and the welding disking area.
12. display device according to claim 11, which further includes the first power supply auxiliary line, first power supply
Auxiliary line is supplied with the voltage from the pad,
Wherein, the cushion is arranged in the first power supply auxiliary line.
13. display device according to claim 12, wherein, the cushion includes three buffer layer and is arranged on described
The 4th cushion on three buffer layer.
14. display device according to claim 13, which further includes second source auxiliary line, the second source
Auxiliary line is arranged between the three buffer layer and the 4th cushion, and via connecing through the three buffer layer
Contact hole is electrically connected with the first power supply auxiliary line.
15. display device according to claim 1, wherein, the cushion is provided with for preventing crackle from spreading anti-
Split groove.
16. display device according to claim 1, wherein, the cushion is formed by organic material.
17. display device according to claim 1, wherein, the cushion is formed as multiple island-shaped patterns.
18. display device according to claim 8, wherein, second inoranic membrane is arranged on the first buffer layer
Periphery.
19. a kind of method for manufacturing display device, this method comprises the following steps：
Pixel is set in display area on substrate；
Cushion is set in non-display area；
Mask is set on the cushion；And
The inoranic membrane for being used for covering the display area is set, and removes the mask.
20. according to the method for claim 19, wherein, include in the step of setting mask on the cushion：Make described
Mask and the buffer layer contacts.
21. according to the method for claim 19, wherein, include in the step of setting mask on the cushion：By described in
Mask is arranged to expose some regions of the upper surface of the cushion.
22. according to the method for claim 19, wherein, the step of setting the cushion in the non-display area, wraps
Include：Dam is set in the non-display area.
23. according to the method for claim 22, wherein, the height of the cushion is more than the height on the dam.
24. according to the method for claim 22, wherein, the cushion is arranged on the periphery on the dam.
25. according to the method for claim 19, wherein, the step of setting the cushion in the non-display area, wraps
Include and first buffer layer and second buffer layer are set in the non-display area, and the method further includes：
First mask is set in the first buffer layer；
The first inoranic membrane for being used for covering the display area is set；
Remove first mask；
Second mask is set in the second buffer layer；
The second inoranic membrane for being used for covering first inoranic membrane is set；And
Remove second mask.
26. according to the method for claim 25, wherein, the first buffer layer and the second buffer layer are sunk by different
Product method deposition forms.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0142945 | 2016-10-31 | ||
| KR20160142945 | 2016-10-31 | ||
| KR1020170053936A KR102451732B1 (en) | 2016-10-31 | 2017-04-26 | Display device and method for manufacturing thereof |
| KR10-2017-0053936 | 2017-04-26 | ||
| KR1020170133749A KR102491590B1 (en) | 2017-10-16 | 2017-10-16 | Display device and method for manufacturing thereof |
| KR10-2017-0133749 | 2017-10-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108039418A true CN108039418A (en) | 2018-05-15 |
| CN108039418B CN108039418B (en) | 2020-02-14 |
Family
ID=62022112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711125930.XA Active CN108039418B (en) | 2016-10-31 | 2017-10-31 | Display device and method for manufacturing the same |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10743425B2 (en) |
| CN (1) | CN108039418B (en) |
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| US10743425B2 (en) | 2020-08-11 |
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