CN108039396A - Light source and plant cultivation method for plant growth - Google Patents
Light source and plant cultivation method for plant growth Download PDFInfo
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- CN108039396A CN108039396A CN201711036879.5A CN201711036879A CN108039396A CN 108039396 A CN108039396 A CN 108039396A CN 201711036879 A CN201711036879 A CN 201711036879A CN 108039396 A CN108039396 A CN 108039396A
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- 230000008635 plant growth Effects 0.000 title claims abstract description 37
- 238000012364 cultivation method Methods 0.000 title claims description 9
- 239000000843 powder Substances 0.000 claims abstract description 54
- 239000002096 quantum dot Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000012528 membrane Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 238000009738 saturating Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 238000005286 illumination Methods 0.000 abstract description 5
- 241000607479 Yersinia pestis Species 0.000 abstract description 4
- 201000010099 disease Diseases 0.000 abstract description 3
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 abstract description 3
- 241000196324 Embryophyta Species 0.000 description 25
- 230000012010 growth Effects 0.000 description 11
- 241000238631 Hexapoda Species 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 235000015097 nutrients Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229930002868 chlorophyll a Natural products 0.000 description 1
- ATNHDLDRLWWWCB-AENOIHSZSA-M chlorophyll a Chemical compound C1([C@@H](C(=O)OC)C(=O)C2=C3C)=C2N2C3=CC(C(CC)=C3C)=[N+]4C3=CC3=C(C=C)C(C)=C5N3[Mg-2]42[N+]2=C1[C@@H](CCC(=O)OC\C=C(/C)CCC[C@H](C)CCC[C@H](C)CCCC(C)C)[C@H](C)C2=C5 ATNHDLDRLWWWCB-AENOIHSZSA-M 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000008124 floral development Effects 0.000 description 1
- 230000005078 fruit development Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
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- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G7/00—Botany in general
- A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
- A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/14—Measures for saving energy, e.g. in green houses
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Ecology (AREA)
- Forests & Forestry (AREA)
- Environmental Sciences (AREA)
- Botany (AREA)
- Biodiversity & Conservation Biology (AREA)
- Cultivation Of Plants (AREA)
- Led Device Packages (AREA)
Abstract
A kind of light source and plant cultivating method for plant growth.The light source includes：LED chip, the Quantum Well of some different emissions is included in its epitaxial structure；And fluorescent powder and/or quantum dot, obtain the light of wave-length coverage needed for covering plant growth to coordinate with LED chip.Further, in the epitaxial structure of the LED chip, along the direction for being gradually distance from light-emitting area, the launch wavelength of each Quantum Well increases successively.Light source provided by the invention includes the Quantum Well of multiple and different launch wavelengths in the epitaxial structure of single LED chip, it can reach the covering of multiple wavelength or big wave-length coverage, and usual manner encapsulation, driving can be used, so as to while optical wavelength all standing needed for plant growth is obtained, significantly simplify the structure of light source and respective illumination devices, effectively reduce its cost, especially by green light activated red, remote red fluorescence powder etc. is used in light source, the generation of pest and disease damage in growing process also effectively can be reduced or prevented.
Description
It is on December 15th, 2015, Application No. " 201510931845.7 ", entitled " use the applying date that the application, which is,
In the light source and plant cultivation method of plant growth " application for a patent for invention divisional application.
Technical field
The present invention relates to a kind of light source based on light emitting semiconductor device, and in particular to a kind of LED based, for plant
The light source and plant cultivation method of growth.
Background technology
In plant growth, illumination is one of vital condition, its quality, quantity and light application time determines plant
Whether thing can be with healthy growth.
Specifically, illumination not only influences photosynthesis, but also has an effect on the photoperiod of plant, light type state and light orientation
Deng.It determines blooming/result the time for a variety of plants, and the height of plant is fat or thin, and the battalion of the direction of growth and plant
It is how many etc. to support component and content.
Due to the difference of biochemical reaction, plant is to differ for the demand of nutrient species and optical wavelength in different stages of growth
Sample.For example in early growth period be mainly the growth and development of root and seedling, what some plants needed most is the nutrients related with nitrogen
Matter, follow-up also needs to the nutrients such as phosphorus and potassium.And for the demand of illumination, during nursery and primary growth, mainly need
Ask with short wavelength, such as the light energy based on blue light.And with substantial amounts of blade is grown, flower and fruit, plant are more and more
Need long wavelength, such as the photon energy of feux rouges.
At present in growing process in order to ensure the multiple wavelength of light quality (components of various wavelength) generally use
LED chip is combined, so as to reach the wave-length coverage of the covering required light of plant growth.However, the hair due to LED chip
The half-peak breadth of optical wavelength is relatively narrow, generally in 12-25nm scopes, to cover chlorophyll a, the absworption peak such as b and beta carrotene,
Need the LED chip using multiple and different wavelength.For example, in order to produce efficient LED plant lamps, it usually needs use
Launch wavelength for 430nm, 460nm, 485nm, 630nm and 660nm etc. LED chip, this cause LED encapsulate and its control compared with
For complexity, cost can remain high.
The content of the invention
It is a primary object of the present invention to provide a kind of light source and plant cultivation method for plant growth, so as to overcome
Deficiency of the prior art.
To realize aforementioned invention purpose, the technical solution adopted by the present invention includes：
The embodiment provides a kind of light source for plant growth, it includes：
LED chip, the Quantum Well of a plurality of different emissions is included in its epitaxial structure；
Fluorescent powder and/or quantum dot, wave-length coverage needed for covering plant growth is obtained to coordinate with the LED chip
Light.In some more preferred embodiment, in the epitaxial structure of the LED chip, along the side for being gradually distance from light-emitting area
To the launch wavelength of each Quantum Well increases successively.
In some preferable case study on implementation, the epitaxial structure of the LED chip is included along the direction for being gradually distance from light-emitting area
Quantum Well that Quantum Well that the launch wavelength set gradually is 420~440nm, launch wavelength are 450~470nm, launch wavelength
For the Quantum Well of 480~500nm.
In some more preferred embodiment, in the epitaxial structure of the LED chip comprising can at least launch it is purple,
The Quantum Well of blue light, and the fluorescent powder and/or quantum dot include green, yellow, red fluorescence powder and/or quantum dot.
In some embodiments particularly preferably, the epitaxial structure of the LED chip includes that the amount of green light can be launched
Sub- trap, and the fluorescent powder and/or quantum dot be selected from can by green light excites and the fluorescence of light that launch wavelength is 700~760nm
Powder and/or quantum dot.
Further, the light source further includes blue light and/or purple LED chip.Alternatively, the epitaxy junction of the LED chip
Structure, which further includes, can launch the purple, Quantum Well of blue light, and the fluorescent powder and/or quantum dot further include green, yellow, red fluorescence
Powder and/or quantum dot.
In some embodiments, the fluorescent powder and/or quantum dot directly overlay the LED chip surface.
In some embodiments, covered with transparent encapsulation material layer, the fluorescent powder and/or amount in the LED chip
Son point is distributed in the encapsulating material layer and/or is covered on the encapsulating material layer.
In some embodiments, the fluorescent powder and/or quantum dot are coated on continuous transparent membrane and/or described glimmering
Light powder and/or quantum dot are distributed in continuous transparent membrane, and the transparent membrane is distributed in the light-emitting surface phase with the LED chip
Answer at position.It is more preferable, along direction initialization, be distributed on the continuous transparent membrane and/or interior fluorescent powder and/or
In quantum dot, can with the LED chip coordinate send the fluorescent powder of the relatively long light of wavelength and/or the ratio of quantum dot by
Gradually lifted, can coordinate the ratio of the fluorescent powder for sending the relatively short light of wavelength and/or quantum dot gradual with the LED chip
Reduce, and in growing process, the continuous transparent membrane is along the direction initialization at the light-emitting surface of the LED chip
Pass sequentially through.The embodiment of the present invention additionally provides a kind of plant cultivation method, it is to be used for plant growth based on described
Light source and implement, the plant cultivation method includes：In growing process, make the light source luminescent and irradiate the plant
Thing, and with the increase of plant growth time, make the ratio of the relatively short light of the light medium wavelength for being radiated at the plant gradual
Reduce, and the ratio of the relatively long light of wavelength is gradually lifted.
Compared with prior art, advantages of the present invention at least that：
(1) light source provided includes the Quantum Well of multiple and different launch wavelengths in the epitaxial structure of single LED chip, can
Achieving the purpose that to cover multiple wavelength or big wave-length coverage, its is simple in structure, can use usual manner encapsulation, driving, so as to
While achieving the purpose that to obtain all standing of optical wavelength needed for plant growth, significantly to simplify light source and respective illumination devices
Structure, effectively reduce its cost；
(2) preferably, by using green light activated red and remote red (700-760nm) fluorescent powder or quantum dot with
The LED of green light can be launched and obtain the required feux rouges of plant growth, then with the LED chip such as purple light, blue light or can launch blue light,
The Quantum Well of purple light coordinates, and can not only reach the purpose for obtaining all standing of optical wavelength needed for plant growth, but also utilize institute
Insect can also be driven by stating the green light of light source transmitting, effectively reduce or prevent the generation of pest and disease damage in growing process.
Brief description of the drawings
Fig. 1 is a kind of a kind of epitaxial structure signal of LED chip in light source for plant growth in the embodiment of the present invention
Figure；
Fig. 2 is a kind of a kind of encapsulating structure signal of LED chip in light source for plant growth in the embodiment of the present invention
Figure；
Description of reference numerals：LED chip 1, fluorescent powder 2, lead 3, chip set 4, substrate 10, the first Quantum Well 20,
Two Quantum Well 30, the 3rd Quantum Well 40, fluorescent powder 50.
Embodiment
Embodying the exemplary embodiments of feature of present invention and advantage will describe in detail in the following description.It should be understood that this
Invention can have various changes in different embodiments, it is neither departed from the scope of the present invention, and it is therein explanation and
Diagram inherently is illustrated as being used, and is not used to the limitation present invention.
Unless otherwise defined, technical and scientific term all used in this specification is led with belonging to the technology of the present invention
The normally understood implication of technical staff in domain is identical.It is specific to be intended merely to description for used term in the description of the invention
Embodiment purpose, it is not intended that in limitation the present invention.
The first embodiment of the present invention provides a kind of light source for plant growth, it includes：
LED chip, the Quantum Well of a plurality of different emissions is included in its epitaxial structure；
Fluorescent powder and/or quantum dot, wave-length coverage needed for covering plant growth is obtained to coordinate with the LED chip
Light.It is more preferable, in the epitaxial structure of the LED chip, along the direction for being gradually distance from light-emitting area, the hair of each Quantum Well
Ejected wave length increases successively.Such design, can effectively be reduced inside LED chip due to absorbing the light loss produced.
For example, referring to Fig. 1, in an embodiment of the present embodiment, the epitaxial structure of the LED chip includes edge
It is the of 460nm to be gradually distance from the 3rd Quantum Well, launch wavelength that launch wavelength that the direction of light-emitting area is set gradually is 430nm
Two Quantum Well, the first Quantum Well that launch wavelength is 480nm.
In an embodiment of the present embodiment, purple, indigo plant can be launched by including in the epitaxial structure of the LED chip
The Quantum Well of light, and the fluorescent powder and/or quantum dot include green, yellow, red fluorescence powder and/or quantum dot, by institute
LED chip and the cooperation of the fluorescent powder and/or quantum dot are stated, all standing for obtaining optical wavelength needed for plant growth can be reached
Purpose.The LED chip of the present embodiment can utilize conventional MOCVD homepitaxy growth techniques to be made, each quantum therein
Trap can be formed in an epitaxial process.And itself in use, using conventional driving structure known to industry reality
Existing LED chip shines.
Further, between the LED chip and the fluorescent powder any suitable method known to industry can be used to coordinate.
For example, in some embodiments of the present embodiment, the fluorescent powder can directly overlay the LED chip table
Face.And adoptable mode includes：Fluorescent powder is applied directly onto LED chip surface by modes such as spraying, printing, coatings,
Uniform phosphor powder layer is formed, by chemistry, physical deposition mode fluorescent powder can also be made to deposit to LED chip surface to be formed
Uniform phosphor powder layer.
For example, in some embodiments of the present embodiment, covered with transparent encapsulation material layer, institute in the LED chip
Fluorescent powder is stated to be distributed in the encapsulating material layer and/or be covered on the encapsulating material layer.Wherein, the transparent enclosure material
The bed of material epoxy resin, organic silica gel etc. can be formed as known to industry.In one more specifically embodiment, figure is referred to
2, the LED chip 1 can be fixed in a chip set 4, and to be coated doped with the transparent encapsulation material of the fluorescent powder 2
The LED chip, while the electrode of the LED chip is turned on extraneous power supply with lead 3 etc., work normally it.
, can be by the fluorescent powder and/or quantum dot coated on continuous transparent membrane in a more preferable scheme
And/or the fluorescent powder and/or quantum dot are inserted in continuous transparent membrane, and by the transparent membrane be distributed in it is described
The light-emitting surface corresponding position of LED chip, for example, directly overlay on the light-emitting surface of the LED chip, and the transparent membrane
Gap can not be stayed between LED chip or leaves gap, it is preferred to use latter approach.
Using the preferable scheme, can by the different phase in plant growth, using include different fluorescent powders and/
Or the transparent membrane of quantum dot coordinates with the LED chip, so as to fulfill the light of different wave length is provided to plant with the light source
Irradiation, meet plant the different stages of growth the needs of.For example, during nursery and primary growth, make the light source to
Plant light energy based on short wavelength is provided and in blade, flower and fruit development, make the light source to plant provide with
Light energy based on long wavelength.
In another more preferable scheme, the fluorescent powder and/or quantum dot can be coated in continuous transparent membrane
Above and/or by the fluorescent powder and/or quantum dot insert in continuous transparent membrane, and along direction initialization, make in the film
In the fluorescent powder and/or quantum dot of upper and/or interior distribution, it can coordinate with the LED chip and send the relatively long light of wavelength
Fluorescent powder and/or the ratio of quantum dot gradually lifted, can coordinate with the LED chip and send the relatively short light of wavelength
The ratio of fluorescent powder and/or quantum dot gradually reduces, and in growing process, and the continuous transparent membrane is along the setting
Direction passes sequentially through at the light-emitting surface of the LED chip.In this way, can be with the growth of plant, using the light source to plant
Thing provides the irradiation of the light of different wave length, meets plant the different stages of growth the needs of.
In a kind of light source for plant growth that the second embodiment of the present invention provides, the epitaxy junction of the LED chip
Structure can be essentially identical with the first embodiment, but may also include the Quantum Well that can launch green light, and the fluorescent powder and/or amount
Son point further include can by green light excite and launch wavelength be 700~760nm light fluorescent powder and/or quantum dot.Wherein, pass through
Use that can to obtain plant growth in the method for green light activated red and remote red fluorescence powder or quantum dot required red
Light.Coordinate again with Quantum Well such as purple light, blue lights, the purpose of all standing of optical wavelength needed for plant growth can be obtained.
The light source of the second embodiment can use and the design of first embodiment light source essentially identical configuration and/or basic phase
Same mode works.
Using the design of green light excitation feux rouges in the light source of the second embodiment, on the one hand, because of green light and the wavelength of feux rouges
Difference is smaller, and in light wavelength conversion, stocks losses BELAND is light activated small, on the other hand, elder brother can be driven using green light
Worm, thus it is favourable for plant growth with green light activated feux rouges, it is not easy to pest and disease damage is produced, is avoided because of blue light, purple light institute
Caused by harmful insect aggregation and may caused by insect pest of the plant.
It should be understood that embodiment described in the invention is merely for exemplary purpose, and it is not used to the limitation present invention
Protection domain, those skilled in the art can be made within the scope of the invention various other replacements, changes and improvements, thus,
The invention is not restricted to the above embodiment, and only it is defined by the claims.
Claims (9)
- A kind of 1. light source for plant growth, it is characterised in that including：LED chip, the Quantum Well of a plurality of different emissions is included in its epitaxial structure,And fluorescent powder and/or quantum dot, obtain wavelength model needed for covering plant growth to coordinate with the LED chip The light enclosed；Wherein, a plurality of Quantum Well include that the purple, Quantum Well of blue and green light can be launched, purple, blue light with that can launch The matched fluorescent powder of Quantum Well and/or quantum dot use green, yellow, red fluorescence powder and/or quantum dot, and green with launching The matched fluorescent powder of Quantum Well and/or quantum dot of light use can by green light excite and launch wavelength for 700~760nm light Fluorescent powder and/or quantum dot.
- 2. the light source according to claim 1 for plant growth, it is characterised in that：The epitaxial structure of the LED chip In, along the direction for being gradually distance from light-emitting area, the launch wavelength of each Quantum Well increases successively.
- 3. the light source according to claim 2 for plant growth, it is characterised in that：The epitaxial structure of the LED chip The Quantum Well for being 420~440nm including the launch wavelength set gradually along the direction for being gradually distance from light-emitting area, launch wavelength are The Quantum Well of 450~470nm, the Quantum Well that launch wavelength is 480~500nm.
- 4. the light source according to claim 1 for plant growth, it is characterised in that：The light source further include blue light and/ Or purple LED chip.
- 5. the light source according to claim 1 for plant growth, it is characterised in that：The fluorescent powder and/or quantum dot Directly overlay the LED chip surface.
- 6. the light source according to claim 1 for plant growth, it is characterised in that：Covered with saturating in the LED chip Bright encapsulating material layer, the fluorescent powder and/or quantum dot are distributed in the encapsulating material layer and/or are covered in the package material On the bed of material.
- 7. the light source according to claim 1 for plant growth, it is characterised in that：The fluorescent powder and/or quantum dot Coated on continuous transparent membrane and/or the fluorescent powder and/or quantum dot are distributed in continuous transparent membrane, the thin transparent Film is distributed in the light-emitting surface corresponding position with the LED chip.
- 8. the light source according to claim 7 for plant growth, it is characterised in that：Along direction initialization, institute is distributed in State on continuous transparent membrane and/or in interior fluorescent powder and/or quantum dot, can coordinate with the LED chip and send wavelength phase The ratio of fluorescent powder and/or quantum dot to longer light is gradually lifted, and it is opposite can to send wavelength with LED chip cooperation The fluorescent powder of shorter light and/or the ratio of quantum dot gradually reduce, and in growing process, the continuous transparent membrane Passed sequentially through along the direction initialization at the light-emitting surface of the LED chip.
- 9. a kind of plant cultivation method, it is characterised in that it is given birth to based on the plant that is used for any one of claim 1-8 Long light source and implement, the plant cultivation method includes：In growing process, make the light source luminescent and irradiate institute State plant, and with the increase of plant growth time, make the ratio of the relatively short light of the light medium wavelength for being radiated at the plant Gradually reduce, and the ratio of the relatively long light of wavelength is gradually lifted.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711036879.5A CN108039396B (en) | 2015-12-15 | 2015-12-15 | Light source and plant cultivation method for plant growth |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510931845.7A CN105405937B (en) | 2015-12-15 | 2015-12-15 | Light source and plant cultivation method for plant growth |
| CN201711036879.5A CN108039396B (en) | 2015-12-15 | 2015-12-15 | Light source and plant cultivation method for plant growth |
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| CN108039396A true CN108039396A (en) | 2018-05-15 |
| CN108039396B CN108039396B (en) | 2019-07-05 |
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| CN110786173A (en) * | 2019-11-15 | 2020-02-14 | 深圳市泛科科技有限公司 | LED spectrum formula and LED light source for planting leaf vegetables |
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| CN106848035B (en) * | 2017-01-24 | 2019-02-19 | 广东绿爱生物科技股份有限公司 | A kind of LED light source and expelling parasite LED filament lamp with anthelminthic effect |
| CN107331740B (en) * | 2017-06-09 | 2019-04-26 | 广明源光科技股份有限公司 | A kind of LED light source fluorescent powder, LED light source and preparation method with anthelminthic effect |
| CN107876553A (en) * | 2017-11-08 | 2018-04-06 | 浙江省能源与核技术应用研究院 | A kind of heavy-metal contaminated soil plant accelerates restorative procedure |
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| CN105405937B (en) | 2017-11-07 |
| CN105405937A (en) | 2016-03-16 |
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