CN108037944A

CN108037944A - The automatic reheating methods of EPROM

Info

Publication number: CN108037944A
Application number: CN201711320555.4A
Authority: CN
Inventors: 吴登娥; 张飞飞; 魏小康; 崔亚男
Original assignee: SUZHOU HUAXIN MICROELECTRONICS CO Ltd
Current assignee: SUZHOU HUAXIN MICROELECTRONICS CO Ltd
Priority date: 2017-12-12
Filing date: 2017-12-12
Publication date: 2018-05-15
Anticipated expiration: 2037-12-12
Also published as: CN108037944B

Abstract

The invention discloses a kind of automatic reheating methods of EPROM, including：The operation control zone of chip is judged if appropriate for programming again, if being adapted to programming, is read memory block, is calculated programming length and data length to be written；Judge whether the programming space in control zone is enough, if so, handling the special instruction of the data to be written, data to be written described in programming；After programming, data check is carried out to programming data, if verifying successfully, automatic programming success；Otherwise, check errors are shown, programming terminates.The automatic reheating methods of EPROM provided by the invention, it is possible to achieve EPROM's is used for multiple times, and is substituted manually using automatic test, recording device, has heightened the utilization rate of EPROM, has reduced reheating cost.

Description

The automatic reheating methods of EPROM

Technical field

The present invention relates to integrated circuit fields, and in particular to a kind of automatic reheating methods of EPROM.

Background technology

The solid state semiconductor memory of prior stored data, English abbreviation ROM can only be read.Except a small number of products are using general Read-only storage outside, the content of read-only storage needed for different user is different.For the ease of using and producing in enormous quantities, into One step has developed programmable read only memory (PROM), erasable programmable read only memory (EPROM) and electric erazable programmable Read-only storage (EEPROM).This memories of wherein EPROM, on the one hand can autonomous programming, it is of low cost, thus flown Speed development, still, need to be irradiated for a long time with ultraviolet light to wipe, relatively complicated.And when the chip quilt for using eprom memory After being packaged into the packaging body without light transmission function, also can not just wipe, can only programming once.The mistake when such chip programming Data, just can not correct, so as to cause damages.

The content of the invention

In view of the deficiencies of the prior art, it is a primary object of the present invention to：It is proposed a kind of automatic reheating methods of EPROM, can To realize being used for multiple times for EPROM, and substituted manually using automatic test, recording device, heightened the utilization rate of EPROM, Reduce reheating cost.

To realize object defined above, the invention discloses a kind of automatic reheating methods of EPROM, including：

S1. the operation control zone of chip is judged if appropriate for programming again, if so, performing step S2；Otherwise, step is performed S7；

S2. memory block is read, calculates programming length；Data to be written are read, and calculate its length；

S3. judge whether the programming space in operation control zone is enough, if so, performing step S4；Otherwise, step is performed S7；

S4. the special instruction of the data to be written is handled；

S5. data to be written described in programming；

S6. data check is carried out to programming data, if verifying successfully, automatic reheating success；Otherwise, display verification is wrong By mistake；

S7. programming terminates.

Preferably, writing when data are burnt, special instruction collection is increased to gauge outfit, table length information is implied, brings into operation Position, which is reserved, redirects space.

Preferably, the operation control zone for judging chip includes if appropriate for programming again：Detection operation control zone Treat programming data with the presence or absence of can not inverse operation, if in the presence of can not inverse operation, the control zone is not suitable for programming again.

Preferably, according to the overall space size of current EPROM chips, and programming length and data to be written length Degree, judges whether programming space is enough.

Preferably, carrying out processing to the special instructions of the data to be written includes：

According to the special instruction collection, all tables of data and its length are searched, to the EPROM addresses phase beyond tables of data Close instruction and carry out address offset；

According to table call instruction, all tables of data calling segments are searched, to call address into line displacement；

Start the reserved area of execution position, the jump instruction of programming address in numerical value.

Preferably, the jump address that described address jump instruction is directed toward is calculated according to current programming space size and determined.

Preferably, it is no in step S1 judging results, before performing step S7, display is unable to programming mistake.

Preferably, it is no in step S3 judging results, before performing step S7, display is unable to programming mistake.

Compared with prior art, the advantage of the invention is that：A kind of automatic reheating methods of EPROM disclosed by the invention, no Programming number is limited, as long as meeting programming condition again, it is possible to programming again, and come using automatic test, recording device Substitute artificial.Therefore being used for multiple times for EPROM can be realized, the space for improving EPROM uses utilization rate, reduces chip weight Burn till this.

Brief description of the drawings

Fig. 1 is a kind of flow chart of the automatic reheating methods of EPROM disclosed in an exemplary embodiments of the invention；

Fig. 2 is a kind of special instruction process chart disclosed in an exemplary embodiments of the invention；

Fig. 3 is a kind of tables of data call address migration process flow chart disclosed in an exemplary embodiments of the invention.

Embodiment

In view of deficiency of the prior art, inventor is able to propose the present invention's through studying for a long period of time and largely putting into practice Technical solution.The technical solution, its implementation process and principle etc. will be further explained as follows.

EPROM different models have a different programming space sizes, and during practical application, some specific function may Only need small part space, and the present invention is judged and is handled by treating programming data, will meet chip residue The data of space and Writing condition carry out burning, its process is substituted manually using automatic test, recording device, it is possible to achieve EPROM's is used for multiple times, and improves the utilization rate of EPROM, reduces reheating cost.

In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, not For limiting the present invention.

Fig. 1 is a kind of flow chart of the automatic reheating methods of EPROM disclosed in an exemplary embodiments of the invention, the automatic weight The flow of burning mainly includes the following steps that：

Step 100, automatic reheating program starts；

Before data programming, write when data are burnt, special instruction collection is increased to gauge outfit, table length information is implied, opens Running position reserved and redirected space beginning.

Step 101, the operation control zone of chip is judged if appropriate for programming again, if so, performing step 102；Otherwise, hold Row step 111；

Operation control zone is detected, emphasis detects the new of this region and treats programming numerical value, if there are irreversible behaviour Make, such as such EPROM only supports full 0 to be changed into 1 operation, if there is the operation for attempting to be changed into 0 by 1, if not such Operation then continues down to perform, otherwise directly report can not programming mistake, programming terminates.

Step 102, EPROM memory blocks are read, calculate programming length；

Step 103, read and treat programming data, and calculate its length；

Step 104, judge whether programming space is enough, if enough, continuing to execute step 105, otherwise, perform step 111；

EPROM data storage areas are read respectively, judgement uses space length, calculates the length for treating programming data, with reference to The overall space size of the model of current EPROM, determines whether space programming data to be burnt, nothing is shown if insufficient space Method programming mistake, programming terminate, and otherwise continue to execute burning operation.

Step 105, according to specific instruction in data to be burnt searching data table, to the data to be burnt beyond tables of data Key instruction has burnt length into line displacement；

Treat burning data to be handled, according to the special instruction collection being inserted into before, search all tables of data and its length, Address offset is carried out to the EPROM address dependent instructions beyond tables of data.

Step 106, according to specific instruction, searching data table calls in data to be burnt, and carries out specially treated；

According to table call instruction, all tables of data calling segments are searched, to call address into line displacement.

Step 107, to starting the instruction of reserved area programming address offset；

Start the reserved area of execution position, the jump instruction of programming address in numerical value, jump address has been burnt according to existing Space size calculating is write to determine.

In the beginning reserved area of EPROM programmings, such as address 0, address 1, address 2, address 3 reserves not programming, and first To address 3 during secondary programming, one jump instruction of programming jumps to target area, to address 2, programming one during second of programming Jump instruction, jumps to target area, and so on.Assuming that EPROM maximum spaces are maxEPROM, it is with EPROM spaces UsedEPROM, jump address objEPROM, then objEPROM=usedEPROM+1, and objEPROM<maxEPROM.

Step 108, programming data to be written；

Step 109, data check is carried out to programming data, if verifying successfully, represents automatic burning success；Otherwise, perform Step 110；

Treated in available programming position and burn data progress programming, data check is carried out after the completion of programming, if verified successfully, Automatic programming is into if check errors, showing check errors, and programming terminates.

Step 110, check errors are shown, perform step 112；

Step 111, display cannot programming mistake again；

Step 112, burning terminates.

Using the automatic reheating methods of EPROM described in the embodiment of the present invention, programming number is not limited, as long as meeting to burn again Write condition, it is possible to programming again.

Fig. 2 is that look-up table and its length are carried out to special instruction, and the process flow of address offset is carried out to special instruction, Mainly include the following steps that：

Step 200, from 0 address detected testing data；

Step 201, judge whether testing data is special instruction collection, if so, then performing 202；Otherwise, step 204 is performed；

Step 202, table length is obtained；

Step 203, table length address, return to step 201 are skipped；

Step 204, special instruction is determined whether, if so, performing step 205；Otherwise, step 206 is performed；

Step 205, address offset is carried out to this instruction operands；

Step 206, special instruction processing is completed.

Fig. 3 is that the process chart to call address into line displacement, mainly includes the following steps that according to table call instruction：

Step 300, from 0 address detected data to be burnt；

Step 301, judge whether data to be burnt are table call instruction, if performing step 302, otherwise, perform step 305；

Step 302, called heading address is obtained；

Step 303, to this address into line displacement；

Step 304, new address is returned to the relevant position of data to be burnt, return to step 301；

Step 305, data monitoring is completed.

For example, table calling segment is as follows：

Instruction 1；If // instructed for address offset

Instruction 2；

Instruction 3；// it is assumed to be address offset instruction

Instruction 4；

Instruction 5；The significant instruction of // call list

Instruction 1~4 is likely to use call instruction, so table call instruction (instruction 5) must first be found, finds instruction After 5, the table address offset of call list is just completed into line displacement using address to instruction 1 and instruction 3；

The automatic reheating methods of EPROM disclosed by the invention, pass through the automatic detection of the remaining space to EPROM chips and burning Record, as long as meeting programming condition again, it is possible to which programming again, does not limit programming number, it is achieved thereby that EPROM's repeatedly makes With substantially increasing the utilization rate of EPROM, and reduce the reheating cost of chip.

It should be appreciated that the technical concepts and features of above-described embodiment only to illustrate the invention, its object is to allow be familiar with this The personage of item technology can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention.It is all The equivalent change or modification that Spirit Essence is made according to the present invention, should be covered by the protection scope of the present invention.

Claims

A kind of 1. automatic reheating methods of EPROM, it is characterised in that comprise the following steps：

S1. the operation control zone of chip is judged if appropriate for programming again, if so, performing step S2；Otherwise, step S7 is performed；

S2. memory block is read, calculates programming length；Data to be written are read, and calculate its length；

S3. judge whether the programming space in operation control zone is enough, if so, performing step S4；Otherwise, step S7 is performed；

S4. the special instruction of the data to be written is handled；

S5. data to be written described in programming；

S6. data check is carried out to programming data, if verifying successfully, automatic reheating success；Otherwise, check errors are shown；

S7. programming terminates.
2. the automatic reheating methods of EPROM according to claim 1, it is characterised in that：When writing the data to be written, Increase special instruction collection in gauge outfit, imply table length information, reserved in the position that brings into operation and redirect space.
3. the automatic reheating methods of EPROM according to claim 1, it is characterised in that the operation control for judging chip Area includes if appropriate for programming again：Detection operation control zone treat programming data with the presence or absence of can not inverse operation, if in the presence of not Invertible operation, then the control zone be not suitable for programming again.
4. the automatic reheating methods of EPROM according to claim 1, it is characterised in that：According to the entirety of current EPROM chips Space size, and programming length and data length to be written, judge whether programming space is enough.
5. the automatic reheating methods of EPROM according to claim 2, it is characterised in that to the special of the data to be written Instruction, which carries out processing, to be included：

According to the special instruction collection, all tables of data and its length are searched, the EPROM addresses correlation beyond tables of data is referred to Order carries out address offset；

According to table call instruction, all tables of data calling segments are searched, to call address into line displacement；

Start the reserved area of execution position, the jump instruction of programming address in numerical value.
6. the automatic reheating methods of EPROM according to claim 5, it is characterised in that：What described address jump instruction was directed toward Jump address is calculated according to current programming space size and determined.
7. the automatic reheating methods of EPROM according to claim 1, it is characterised in that：It is no in step S1 judging results, holds Before row step S7, display is unable to programming mistake.
8. the automatic reheating methods of EPROM according to claim 1, it is characterised in that：It is no in step S3 judging results, holds Before row step S7, display is unable to programming mistake.