CN108034927A - VO for the more broad band absorbers of near-infrared2Film composite structure preparation method - Google Patents

VO for the more broad band absorbers of near-infrared2Film composite structure preparation method Download PDF

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CN108034927A
CN108034927A CN201711079315.XA CN201711079315A CN108034927A CN 108034927 A CN108034927 A CN 108034927A CN 201711079315 A CN201711079315 A CN 201711079315A CN 108034927 A CN108034927 A CN 108034927A
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film
substrate
vanadium
sputtering
sio
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梁继然
李鹏
宋晓龙
周立伟
郭津榜
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Tianjin University
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation

Abstract

The present invention discloses one kind and is used for the more broad band absorber VO of near-infrared2Film composite structure preparation method, mainly by substrate sapphire, golden reflecting layer, silica nanosphere array and vanadium dioxide film to form, by evaporating one layer of golden film reflecting layer of plating in sapphire substrates, individual layer silica ball array is lifted in golden film, passing through magnetron sputtering vanadium metal film, and vanadium dioxide film is prepared using the mode of rapid thermal annealing, composite nanostructure is formed, realizes the more wide band absorptions of near-infrared.

Description

VO for the more broad band absorbers of near-infrared2Film composite structure preparation method
Technical field
The present invention relates to the technology of preparing of the more broad band absorbers of near-infrared, and in particular to one kind is used for the more broadbands of near-infrared and inhales Receive the VO of device2Film composite structure preparation method.
Background technology
Electromagnetism Meta Materials (Metamaterials) are a kind of artificial composite structures or composite material[1], have in nature Peculiar electromagnetic characteristic not available for conventional material, by the geometry and size that rationally design Meta Materials, it is possible to achieve its Perfection to special frequency channel electromagnetic wave absorbs.Electromagnetism Meta Materials perfection absorber is in terahertz imaging, material detection, solar-electricity Pond etc. has potential application value.
Vanadium dioxide (VO2) it is a kind of temperature-sensitive material[2], can occur at 68 DEG C by semiconductor mutually changing to metal phase Become, in phase transition process, crystal structure is changed into high temperature four directions rutile structure from low temperature monocline rutile structure, before phase change rear VO2 Optically and electrically performance reversible rapid mutation occurs, especially near infrared band VO2Transmission occur from highly transmissive to low , there are obvious on and off two states in the transformation of transmission.Due to the advantage with this optical property altering so that VO2Into To regulate and control the ideal material of optics.
Since Meta Materials are to rely on resonance absorbing in itself, so absorption spectra is very narrow, it is largely just for single humorous Vibration frequency absorbs, once away from resonant frequency, absorptivity will decay.For many applications, such as solar cell, multifrequency Detector etc., needs the characteristic of broadband or multiband absorption mostly.How broad band absorber structure is effectively obtained, become section Grind a hot spot of boundary's research.
The content of the invention
It is an object of the invention to overcome above-mentioned background technology there are the defects of, propose that a kind of more broadbands of near-infrared that are used for are inhaled Receive the VO of device2Film composite structure preparation method, mainly by substrate sapphire, golden reflecting layer, silica nanosphere array And vanadium dioxide film, by evaporating one layer of golden film reflecting layer of plating in sapphire substrates, lifts individual layer to form in golden film Silica ball array, then by magnetron sputtering vanadium metal film, and to prepare vanadium dioxide thin using the mode of rapid thermal annealing Film, forms a kind of composite nanostructure, realizes the more broad band absorbers of near-infrared.
Technical scheme:VO for the more broad band absorbers of near-infrared2Film composite structure preparation method, including Following steps：
(1), substrate cleans：Alundum (Al2O3) substrate is sequentially placed into deionized water, acetone and absolute ethyl alcohol ultrasonic Cleaning, it is to be cleaned it is clean after substrate is put into it is spare in absolute ethyl alcohol；
(2) evaporation sputtering golden film：The gold thin film of one layer of 100nm of evaporation sputtering on substrate after above-mentioned steps (1) cleaning；
(3), single dispersing SiO is prepared2Mask layer：Clean drainage piece is inserted into deionized water, then using liquid-transfering gun By SiO2Ball solution is dripped on drainage piece, drop is slowly flowed to deionized water surface, is repeated until whole liquid level is formed closely Individual layer silica spheres, stand after liquid level stabilizing, with lifting coating machine will through above-mentioned steps (2) evaporate sputtering golden film base Piece is fixed and is immersed in lifting liquid, then slowly lifts out liquid level vertically, pull rate is controlled in 10-100 μm/min Between, obtain single dispersing SiO2Mask layer, i.e. individual layer SiO2Ball array；
(4), vanadium film is prepared：
The individual layer SiO2 ball arrays that above-mentioned steps (3) obtain are placed in the vacuum of ultrahigh vacuum facing-target magnetron sputtering system equipment Room, in the vanadium film that its surface deposit thickness is 60-80nm, sputtering power 135W, sputtering time 8-11min；
(5) preparation of vanadium dioxide film：
Vanadium film made from step (4) is put in progress Quick Oxidation heat treatment, oxygen flow 2- in quick anneal oven 4slpm, holding temperature are 450 DEG C, and heating rate is fixed as 50 DEG C/s, heating-up time 9s, and soaking time is respectively 45-65s, drop Warm time 90s.
In the step (1) alundum (Al2O3) substrate for (001) crystal face double polishings sapphire, 1 × 1cm of size2, it is thick Spend for 0.45mm.
SiO in the step (3)2Ball solution particles particle diameter is 600nm.
The vacuum chamber of ultrahigh vacuum facing-target magnetron sputtering system equipment, uses quality purity as 99.95% in the step (4) Vanadium metal is used as working gas, vacuum 4 × 10 as target by 99.999% argon gas of quality purity-4Pa, substrate temperature For room temperature, argon gas flow 48mL/min, sputtering operating air pressure is 2Pa.
Compared with prior art, the present invention has the advantage that：The present invention prepares the colloid spherical array low with cost using quick Row and VO2Film combines, and using volleyball skill and magnetron sputtering membrane process is lifted, silica nanosphere is arranged in golden film Array simultaneously prepares VO on it2Hemispherical Shell membrane structure, forms a kind of more broad band absorbers of near-infrared and utilizes VO2Phase transformation it is special Property regulates and controls absorptivity.
(1) compared with the Meta Materials absorbent prepared using advanced technology, the nanoprocessing preparation side based on colloidal crystal Method, has the characteristics that inexpensive, easy to operate and production efficiency is high.
(2) preparation of composite construction is passed through, it is possible to achieve more wide band absorptions, and pass through VO2The change of state, realizes and inhales " switch " received.
Brief description of the drawings
Fig. 1 is silica nanosphere array/vanadium dioxide film composite construction schematic diagram.
Fig. 2 is silica nanosphere array/vanadium dioxide film composite construction SEM figures：(a), (b) is different times magnifications Several positive SEM figures；(c) scheme for side SEM.
Fig. 3 is abosrption spectrogram：A, b is experiment, the abosrption spectrogram of simulation respectively.
Embodiment
Below by specific embodiments and the drawings, the present invention is further illustrated.The embodiment of the present invention is in order to more Those skilled in the art is more fully understood the present invention well, any limitation is not made to the present invention.
The present invention is raw materials used to use commercially available material：
Embodiment 1：
(1) substrate cleans：
Alundum (Al2O3) substrate used for (001) crystal face double polishings sapphire, 1 × 1cm of size2, thickness is 0.45mm.Substrate is sequentially placed into deionized water, acetone and absolute ethyl alcohol and is cleaned by ultrasonic respectively 20 minutes, removes surface Organic impurities；It is washed with deionized water only, is finally put into substrate spare in absolute ethyl alcohol again.
(2) evaporation sputtering golden film, prepares golden reflecting layer:
The gold thin film of one layer of 100nm of evaporation sputtering on the substrate of wash clean.
(3) single dispersing SiO is prepared2Mask layer：
First, clean drainage piece oblique cutting is entered in deionized water, then the SiO using liquid-transfering gun by particle diameter for 600nm2 Ball solution is added drop-wise on drainage piece, and it is slowly flowed on the water surface, and uniform drawout comes, and forms high density, the list of large area Layer SiO2Array, so as to be configured to lifting liquid.Standing, slowly will be through evaporation sputtering gold with plated film pulling machine after liquid level stabilizing The substrate of film is immersed in lifting liquid, and vertical and slowly lift out liquid level, and pull rate is determined as 25 μm/min, obtain compared with The single dispersing SiO of high quality2Mask layer, i.e. individual layer SiO2Ball array.
(4) vanadium (V) film is prepared：
Surface had into individual layer SiO2The substrate of spherical array array structure is placed in the vacuum of ultrahigh vacuum facing-target magnetron sputtering system equipment Room, it is 99.95% vanadium metal as target to use quality purity, and work gas is used as by 99.999% argon gas of quality purity Body, background vacuum 4 × 10-4Pa, substrate temperature are room temperature, and argon gas flow 48mL/min, sputtering operating air pressure is 2Pa, sputtering power 135W, sputtering time 8min, the vanadium metal film that corresponding thickness is 60 nanometers is deposited on surface.
(5) preparation of vanadium dioxide film：
Vanadium film made from step (4) is put in progress Quick Oxidation heat treatment in quick anneal oven.It is passed through during thermal oxide Gas be high purity oxygen gas, gas flow is fixed as 3slpm, and holding temperature is 450 DEG C, and heating rate is by setting holding temperature Determined with the heating-up time, its value is fixed as 50 DEG C/s, heating-up time 9s, soaking time 50s, temperature fall time 90s.
As shown in Figure 1, silica nanosphere array/vanadium dioxide film composite construction schematic diagram, the bottom is in figure Sapphire substrates, one layer of gold thin film is sputtered in sapphire substrates, the silica ball array of one layer of individual layer is lifted in golden film, most One layer of vanadium dioxide is covered in ball array afterwards；
As shown in Fig. 2, silica nanosphere array/vanadium dioxide film composite construction SEM figures：(a), (b) is difference The positive SEM figures of amplification factor, as can be seen from the figure each ball more closely links together in composite construction, dioxy Change uniform point of vanadium to be covered on the surface of ball；(c) scheme for side SEM, it can be seen from the figure that there is one layer of gold thin in substrate Film, and the ball array of individual layer is closely spaced in gold thin film；
As shown in figure 3, abosrption spectrogram：A, b is experiment, the abosrption spectrogram of simulation respectively, and two are presented respectively in figure Vanadium oxide is in the low temperature absorptivity different with during high temperature, when from low temperature to high temperature transformation, absorb wave crest there occurs blue shift and Absorptivity after 1500nm adds, and realizes more wide band absorptions.
Embodiment 2：
(1) substrate cleans：
Alundum (Al2O3) substrate used for (001) crystal face double polishings sapphire, 1 × 1cm of size2, thickness is 0.45mm.Substrate is sequentially placed into deionized water, acetone and absolute ethyl alcohol and is cleaned by ultrasonic respectively 30 minutes, removes surface Organic impurities；It is washed with deionized water only, is finally put into substrate spare in absolute ethyl alcohol again.
(2) evaporation sputtering golden film, prepares golden reflecting layer:
The gold thin film of one layer of 100nm of evaporation sputtering on the substrate of wash clean.
(3) single dispersing SiO is prepared2Mask layer：
First, clean drainage piece oblique cutting is entered in deionized water, then the SiO using liquid-transfering gun by particle diameter for 600nm2 Ball solution is added drop-wise on drainage piece, and it is slowly flowed on the water surface, and uniform drawout comes, and forms high density, the list of large area Layer SiO2Array, so as to be configured to lifting liquid.Standing, slowly will be through evaporation sputtering gold with plated film pulling machine after liquid level stabilizing The substrate of film is immersed in lifting liquid, and vertical and slowly lift out liquid level, and pull rate is determined as 10 μm/min, obtain compared with The single dispersing SiO of high quality2Mask layer, i.e. individual layer SiO2Ball array.
(4) vanadium (V) film is prepared：
Surface had into individual layer SiO2The substrate of spherical array array structure is placed in the vacuum of ultrahigh vacuum facing-target magnetron sputtering system equipment Room, it is 99.95% vanadium metal as target to use quality purity, and work gas is used as by 99.999% argon gas of quality purity Body, background vacuum 4 × 10-4Pa, substrate temperature are room temperature, and argon gas flow 48mL/min, sputtering operating air pressure is 2Pa, sputtering power 135W, sputtering time 11min, the vanadium metal film that corresponding thickness is 80 nanometers is deposited on surface.
(5) preparation of vanadium dioxide film：
Vanadium film made from step (4) is put in progress Quick Oxidation heat treatment in quick anneal oven.It is passed through during thermal oxide Gas be high purity oxygen gas, gas flow is fixed as 3.5slpm, and holding temperature is 450 DEG C, and heating rate, which passes through, sets insulation temperature Degree and heating-up time determine that its value is fixed as 50 DEG C/s, heating-up time 9s, soaking time 45s, temperature fall time 90s.
Embodiment 3：
(1) substrate cleans：
Alundum (Al2O3) substrate used for (001) crystal face double polishings sapphire, 1 × 1cm of size2, thickness is 0.45mm.Substrate is sequentially placed into deionized water, acetone and absolute ethyl alcohol and is cleaned by ultrasonic respectively 30 minutes, removes surface Organic impurities；It is washed with deionized water only, is finally put into substrate spare in absolute ethyl alcohol again.
(2) evaporation sputtering golden film, prepares golden reflecting layer:
The gold thin film of one layer of 100nm of evaporation sputtering on the substrate of wash clean.
(3) single dispersing SiO is prepared2Mask layer：
First, clean drainage piece oblique cutting is entered in deionized water, then the SiO using liquid-transfering gun by particle diameter for 600nm2 Ball solution is added drop-wise on drainage piece, and it is slowly flowed on the water surface, and uniform drawout comes, and forms high density, the list of large area Layer SiO2Array, so as to be configured to lifting liquid.Standing, slowly will be through evaporation sputtering gold with plated film pulling machine after liquid level stabilizing The substrate of film is immersed in lifting liquid, and slowly lifts out liquid level vertically, and pull rate is determined as 100 μm/min, obtains The single dispersing SiO of better quality2Mask layer, i.e. individual layer SiO2Ball array.
(4) vanadium (V) film is prepared：
Surface had into individual layer SiO2The substrate of spherical array array structure is placed in the vacuum of ultrahigh vacuum facing-target magnetron sputtering system equipment Room, it is 99.95% vanadium metal as target to use quality purity, and work gas is used as by 99.999% argon gas of quality purity Body, background vacuum 4 × 10-4Pa, substrate temperature are room temperature, and argon gas flow 48mL/min, sputtering operating air pressure is 2Pa, sputtering power 135W, sputtering time 10min, the vanadium metal film that corresponding thickness is 75 nanometers is deposited on surface.
(5) preparation of vanadium dioxide film：
Vanadium film made from step (4) is put in progress Quick Oxidation heat treatment in quick anneal oven.It is passed through during thermal oxide Gas be high purity oxygen gas, gas flow is fixed as 2slpm, and holding temperature is 450 DEG C, and heating rate is by setting holding temperature Determined with the heating-up time, its value is fixed as 50 DEG C/s, heating-up time 9s, soaking time 65s, temperature fall time 90s.
The present invention prepares silica nanosphere array/vanadium dioxide film composite construction, and is applied in more broadbands In absorber, the phase-change characteristic of vanadium dioxide can be made full use of for the regulating and controlling effect of infrared band, in addition this titanium dioxide The absorption characteristic that can be switched that the combination of vanadium spherical shell and earth silicon material is shown, can provide the hair of bigger for absorber Open up potentiality.
It should be appreciated that embodiment and example discussed herein simply to illustrate that, to those skilled in the art For, it can be improved or be converted, and all these modifications and variations should all belong to the protection of appended claims of the present invention Scope.
Pertinent literature：
[1].Tao H,Landy N I,Bingham C M,et al.A metamaterial absorber for the terahertz regime:design,fabrication and characterization.[J].Optics Express, 2008,16(10):7181-8.
[2].Kim H T,Chae B G,Youn D H,et al.Mechanism and observation of Mott transition in VO2-based two-and three-terminal devices[J].New Journal of Physics,2004,6(1):52.

Claims (4)

1. the VO for the more broad band absorbers of near-infrared2Film composite structure preparation method, it is characterised in that include the following steps：
(1), substrate cleans：Alundum (Al2O3) substrate is sequentially placed into deionized water, acetone and absolute ethyl alcohol and is cleaned by ultrasonic, It is to be cleaned it is clean after substrate is put into it is spare in absolute ethyl alcohol；
(2) evaporation sputtering golden film：The gold thin film of one layer of 100nm of evaporation sputtering on substrate after above-mentioned steps (1) cleaning；
(3), single dispersing SiO is prepared2Mask layer：Clean drainage piece is inserted into deionized water, then using liquid-transfering gun by SiO2 Ball solution is dripped on drainage piece, drop is slowly flowed to deionized water surface, is repeated until whole liquid level forms close individual layer Silica spheres, stand after liquid level stabilizing, are fixed the substrate that sputtering golden film is evaporated through above-mentioned steps (2) with lifting coating machine And be immersed in lifting liquid, liquid level is slowly then lifted out vertically, pull rate is controlled between 10-100 μm/min, is obtained To single dispersing SiO2Mask layer, i.e. individual layer SiO2Ball array；
(4), vanadium film is prepared：
The individual layer SiO2 ball arrays that above-mentioned steps (3) obtain are placed in the vacuum chamber of ultrahigh vacuum facing-target magnetron sputtering system equipment, Its surface deposit thickness be 60-80nm vanadium film, sputtering power 135W, sputtering time 8-11min；
(5) preparation of vanadium dioxide film：
Vanadium film made from step (4) is put in progress Quick Oxidation heat treatment, oxygen flow 2- in quick anneal oven 4slpm, holding temperature are 450 DEG C, and heating rate is fixed as 50 DEG C/s, heating-up time 9s, and soaking time is respectively 45-65s, drop Warm time 90s.
2. preparation method according to claim 1, it is characterised in that alundum (Al2O3) substrate is in the step (1) (001) sapphire of double polishings of crystal face, 1 × 1cm of size2, thickness 0.45mm.
3. preparation method according to claim 1, it is characterised in that SiO in the step (3)2Ball solution particles particle diameter is 600nm。
4. preparation method according to claim 1, it is characterised in that ultrahigh vacuum splashes target magnetic control in the step (4) The vacuum chamber of jet device, it is 99.95% vanadium metal as target to use quality purity, using quality purity as 99.999% argon Gas is as working gas, vacuum 4 × 10-4Pa, substrate temperature are room temperature, and argon gas flow 48mL/min, sputters work Air pressure is 2Pa.
CN201711079315.XA 2017-11-06 2017-11-06 VO for the more broad band absorbers of near-infrared2Film composite structure preparation method Pending CN108034927A (en)

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CN108919391A (en) * 2018-06-14 2018-11-30 国家纳米科学中心 Based on metallic film-nucleocapsid plasma structure broadband perfect absorber
CN108919391B (en) * 2018-06-14 2020-11-20 国家纳米科学中心 Broadband perfect absorber based on metal film-core-shell plasma structure
CN108950492B (en) * 2018-07-06 2020-06-09 中国航发北京航空材料研究院 Preparation method of VO2 composite file with optical limiting performance
CN108950492A (en) * 2018-07-06 2018-12-07 中国航发北京航空材料研究院 A kind of VO with optical limiting properties2The preparation method of laminated film
CN109207929A (en) * 2018-10-17 2019-01-15 天津大学 A kind of porous periodic vanadium dioxide structure and preparation method thereof
CN111403536A (en) * 2019-06-05 2020-07-10 江西师范大学 Solar wave absorber and preparation method thereof
CN111403536B (en) * 2019-06-05 2022-05-20 江西师范大学 Solar wave absorber and preparation method thereof
CN112558199A (en) * 2019-09-10 2021-03-26 中国科学院上海硅酸盐研究所 Adjustable near-infrared ultrathin broadband perfect absorber and preparation method thereof
CN111411334A (en) * 2020-02-29 2020-07-14 天津大学 Silicon dioxide-vanadium dioxide multistage array structure and preparation method thereof
CN112613173A (en) * 2020-12-18 2021-04-06 北京理工大学 Method for calculating and simulating absorptivity of gold-black film
CN112613173B (en) * 2020-12-18 2022-08-26 北京理工大学 Method for calculating and simulating absorptivity of gold-black film
CN112326025A (en) * 2021-01-05 2021-02-05 武汉敏芯半导体股份有限公司 Photoelectric detector based on curved surface structure super surface
CN112326025B (en) * 2021-01-05 2021-03-19 武汉敏芯半导体股份有限公司 Photoelectric detector based on curved surface structure super surface

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