CN108022941A - 显示装置及其形成方法 - Google Patents
显示装置及其形成方法 Download PDFInfo
- Publication number
- CN108022941A CN108022941A CN201711032522.XA CN201711032522A CN108022941A CN 108022941 A CN108022941 A CN 108022941A CN 201711032522 A CN201711032522 A CN 201711032522A CN 108022941 A CN108022941 A CN 108022941A
- Authority
- CN
- China
- Prior art keywords
- thickness
- display device
- base plate
- flexible base
- hardness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 91
- 239000012528 membrane Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 19
- 239000003292 glue Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 description 40
- 239000002019 doping agent Substances 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 19
- 238000012360 testing method Methods 0.000 description 17
- 230000007704 transition Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- -1 polyethylene naphthalate Polymers 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000006748 scratching Methods 0.000 description 5
- 230000002393 scratching effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 229920001601 polyetherimide Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- 230000002463 transducing effect Effects 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- HEVJRDIIZYQGQT-UHFFFAOYSA-N indium palladium Chemical compound [Pd].[In] HEVJRDIIZYQGQT-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- ZMLDXWLZKKZVSS-UHFFFAOYSA-N palladium tin Chemical compound [Pd].[Sn] ZMLDXWLZKKZVSS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920000638 styrene acrylonitrile Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/32148—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the layer connector connecting to a bonding area protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1426—Driver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明提供显示装置及其形成方法,显示装置包含支撑膜,可挠性基板设置于支撑膜上,驱动层设置于可挠性基板上,导电垫设置于驱动层上,以及发光二极管设置于导电垫上且电性连接于导电垫,其中支撑膜具有第一硬度,可挠性基板具有第二硬度,且第一硬度大于或等于第二硬度。
Description
技术领域
本发明是关于显示装置,特别是关于包含可挠性基板和支撑膜的显示装置及其形成方法。
背景技术
采用可挠性基板的显示装置具有可弯曲、可卷成筒状、广视角以及可携带的优势,因此,在显示器的应用领域中,例如可携式产品,采用可挠性基板的显示装置有广泛的应用层面以及市场优势。
然而在显示装置中,可挠性基板必须与支撑膜搭配设置,且前述二者皆不能太软,否则,显示装置可能在制造过程中遭受损坏。再者,如何在采用可挠性基板和支撑膜的显示装置的制造过程中监测其接合状况是另一个重要的课题。
虽然现存采用可挠性基板和支撑膜的显示装置及其形成方法已足够应付它们原先预定的用途,但它们仍未在各个方面皆彻底的符合要求,因此采用可挠性基板和支撑膜的显示装置目前仍有待克服的问题。
发明内容
根据一些实施例,提供显示装置。显示装置包含支撑膜,可挠性基板设置于支撑膜上,驱动层设置于可挠性基板上,导电垫设置于驱动层上,以及发光二极管设置于导电垫上且电性连接于导电垫,其中支撑膜具有第一硬度,可挠性基板具有第二硬度,且第一硬度大于或等于第二硬度。
根据一些实施例,提供显示装置的形成方法。显示装置的形成方法包含在承载基板上形成可挠性基板,在可挠性基板上形成驱动层,以及在驱动层上形成导电垫。显示装置的形成方法也包含实施接合制程将发光二极管与导电垫接合,其中发光二极管电性连接于导电垫。显示装置的形成方法更包含移除承载基板,以及将支撑膜附着至可挠性基板,其中支撑膜具有第一硬度,可挠性基板具有第二硬度,且第一硬度大于或等于第二硬度。
附图说明
借由以下的详细说明配合所附图式,我们能更加理解本发明实施例的观点。值得注意的是,根据工业上的标准惯例,各种元件可能没有按照比例绘制。事实上,为了能清楚地讨论,各种元件的尺寸可能被任意地增加或减少。
图1A-1N是根据一些实施例,说明形成显示装置的方法的各个示范连续阶段的剖面示意图;
图2是根据一些实施例,说明显示装置的透视图,其中图1A-1N是沿着图2中线I-I’的显示装置的剖面示意图;
图3是图1N中A区域的部分放大图;
图4A-4G是根据一些其他的实施例,说明形成显示装置的方法的各个示范连续阶段的剖面示意图;
图4H是图4G中B区域的部分放大图;
图5A是根据一些实施例,说明使用铅笔硬度试验机对显示装置的支撑膜进行示范测试方法的剖面示意图;
图5B是根据一些实施例,说明使用铅笔硬度试验机对显示装置的可挠性基板进行示范测试方法的剖面示意图;
图6是根据一些实施例,说明显示装置的支撑膜和可挠性基板的铅笔硬度测试结果。
符号说明:
100、200~显示装置;
101~晶圆基板;
103~缓冲层;
105~第一掺杂层;
105a、105b、105c、105d~第一掺杂图案;
107~第二掺杂层;
107a、107b、107c~第二掺杂图案;
109a、109b、109c、109d~第二电极;
111a、111b、111c、111d、217~绝缘层;
113a、113b、113c、113d~第一电极;
115a、115b、115c、215a、215b~发光二极管;
115d~导电结构;
151、251~承载基板;
153、253、353~可挠性基板;
155、255~驱动层;
157a、157b、157c、157d、257a、257b~导电垫;
159~异方性导电膜;
160~导电粒子;
170~接合制程;
181a、181b、181c、181d~延伸部;
183~遮光层;
185a、185b、185c~开口;
187、223~光学转换层;
189、289、389~支撑胶;
191、291、391~支撑膜;
201~转移头阵列;
213a、213b~导电元件;
219~第二电极层;
221~钝化层;
229~光学转换结构;
231~盖层;
225~粘着层;
227~彩色滤光层;
300~测试平台;
400、500~铅笔;
D1、D2、D3、D4、D5~距离;
T1、T2、T3、T4、T5、T6、T7、T8~厚度;
X、Y~宽度;
Z~高度;
ΔX~高度差。
具体实施方式
以下提供了很多不同的实施例或范例,用于实施所提供的标的物的不同元件。各元件和其配置的具体范例描述如下,以简化本发明实施例。当然,这些仅仅是范例,并非用以限定本发明实施例。举例而言,叙述中若提及第一元件形成在第二元件之上,可能包含第一和第二元件直接接触的实施例,也可能包含额外的部件形成在第一和第二元件之间,使得第一和第二元件不直接接触的实施例。此外,本发明实施例可能在不同的范例中重复参考数字及/或字母。如此重复是为了简明和清楚,而非用以表示所讨论的不同实施例及/或形态之间的关系。
以下描述实施例的一些变化。在不同图式和说明的实施例中,相似的参考数字被用来标示相似的元件。可以理解的是,在下述方法之前、期间和之后可以提供额外的操作,且一些叙述的操作可为了该方法的其他实施例被取代或删除。
图1A-1N是根据一些实施例,说明形成图1N的显示装置100的方法的各个示范连续阶段的剖面示意图。
根据一些实施例,如图1A所示,提供晶圆基板101,且在晶圆基板101上形成缓冲层103。晶圆基板101可由硅、碳化硅(SiC)、氮化镓(GaN)、二氧化硅(SiO2)、蓝宝石或前述的组合制成。一些实施例中,缓冲层103是使用金属有机化学气相沉积(metal organicchemical vapor deposition,MOCVD)、分子束磊晶(molecular beam epitaxy)或前述的组合形成。再者,缓冲层103可由氮化铝(AlN)、氮化镓(GaN)、氮化铝镓(AlGaN)、氮化铝铟镓(InAlGaN)或前述的组合制成。在本实施例中,缓冲层103是由未掺杂的氮化镓(GaN)形成。
再参见图1A,在缓冲层103上形成第一掺杂层105,且在第一掺杂层105上形成第二掺杂层107。第一掺杂层105和第二掺杂层107的制程和基础材料相同或相似于缓冲层103的制程和基础材料,在此便不重复叙述。在本实施例中,第一掺杂层105为N型,其中掺杂合适的N型掺质,例如磷(P)、砷(As)或相似的掺质,而第二掺杂层107为P型,其中掺杂合适的P型掺质,例如硼(B)、镓(Ga)、铟(In)或相似的掺质。
然后,如图1B所示,自第一掺杂层105上的第二掺杂层107形成多个第二掺杂图案107a、107b和107c。第二掺杂图案107a、107b和107c是借由实施光刻制程,以在第二掺杂层107上形成图案化遮罩,以及使用图案化遮罩对第二掺杂层107实施蚀刻制程而形成。
随后,如图1C所示,自缓冲层103上的第一掺杂层105形成多个第一掺杂图案105a、105b、105c和105d。第一掺杂层图案105a、105b、105c和105d的制程相同或相似于第二掺杂图案107a、107b和107c的制程,在此便不重复叙述。一些实施例中,第一掺杂层图案105a、105b和105c的位置分别对应于第二掺杂图案107a、107b和107c的位置。举例而言,第二掺杂图案107a设置于第一掺杂层图案105a上。此外,第一掺杂层图案105a、105b、105c和105d的高度和宽度大于第二掺杂图案107a、107b和107c的高度和宽度。
值得注意的是第一掺杂图案105c和105d可具有高度差ΔX。由于第一掺杂图案105d上没有第二掺杂图案,没有第二掺杂图案在其上方的第一掺杂图案105d在制程中可能被过度蚀刻。
接着,参考图1D,在第一掺杂图案105a、105b、105c和105d上以及在缓冲层103上形成多个第二电极109a、109b、109c和109d。一些实施例中,第二电极109a、109b、109c和109d由具有良好导电性的金属制成,例如金(Au)、银(Ag)、铜(Cu)、铂(Pt)、镍(Ni)、锡(Sn)、镁(Mg)、前述的组合或其他导电材料。此外,第二电极109a、109b、109c和109d由沉积制程和图案化制程形成。沉积制程可为化学气相沉积(chemical vapor deposition,CVD)制程、物理气相沉积(physical vapor deposition,PVD)制程、原子层沉积(atomic layerdeposition,ALD)制程、高密度等离子化学气相沉积(high density plasma chemicalvapor deposition,HDPCVD)制程、金属有机化学气相沉积(MOCVD)制程、等离子增强化学气相沉积(plasma enhanced chemical vapor deposition,PECVD)制程或前述的组合。
明确而言,第二电极109a、109b、109c和109d主要设置在第一掺杂图案105a、105b、105c和105d的部分侧壁上,且分别延伸至第一掺杂图案105a、105b、105c和105d的部分顶面上。特别的是第二电极109d是设置在第一掺杂图案105d的侧壁的一部分上,且几乎完全覆盖第一掺杂图案105d的顶面。
根据一些实施例,如图1E所示,在第一掺杂图案105a、105b和105c;第二掺杂图案107a、107b和107c;以及第二电极109a、109b和109c的侧壁上形成多个绝缘层111a、111b和111c,以分别暴露出第二掺杂图案107a、107b和107c的一部分。此外,在第二电极109d的顶面上形成绝缘层111d。一些实施例中,绝缘层111a、111b、111c和111d由氧化硅、氮化硅、氮氧化硅或其他合适的绝缘材料制成。绝缘层111a、111b、111c和111d可借由沉积制程、打印(stamping)制程、射出(injecting)制程或其他合适的制程形成。
接续前述,参见图1F,在第二掺杂图案107a、107b和107c以及绝缘层111a、111b和111c上各自形成第一电极113a、113b和113c。此外,在第二电极109d和绝缘层119d上形成第一电极113d。第一电极113a、113b、113c和113d的材料和制程相同或相似于第二电极109a、109b、109c和109d的材料和制程,在此便不重复叙述。
值得注意的是,第一电极113a、113b、113c和113d的最顶面为共平面(如图1F的虚线所示)。在形成第一电极113a、113b、113c和113d之后,完成多个发光二极管115a、115b和115c。一些实施例中,发光二极管115a、115b和115c可为微型发光二极管(micro light-emitting diodes,μ-LEDs)。明确而言,微型发光二极管具有大约数十微米的长度和宽度,且具有大约10微米的高度。特别是微型发光二极管的高度可在5微米至约8微米的范围内。
发光二极管115a是由第一掺杂图案105a、第二掺杂图案107a、第二电极109a、绝缘层111a和第一电极113a组成。发光二极管115b和115c的组成与发光二极管115a的组成相同,在此便不重复叙述。此外,第一掺杂图案105d、第二电极109d、绝缘层111d和第一电极113d组成导电结构115d。导电结构115d是用于电性连接和进行信号的传递,且导电结构115d通常位于晶圆基板101的边缘,但不限于此。
根据一些实施例,如图1G所示,将图1F所示的晶圆基板101及其上方的元件上下翻转以面向承载基板151。承载基板151可为玻璃基板或塑胶基板。此外,在承载基板151上形成可挠性基板153,在可挠性基板153上形成驱动层155,且在驱动层155上形成多个导电垫157a、157b、157c和157d。
可挠性基板153可由高分子材料,例如聚亚酰胺(polyimide,PI)树脂、聚醚酰亚胺(polyetherimide,PEI)树脂、聚碳酸(polycarbonate,PC)树脂、聚甲基丙烯酸甲酯(polymethylmethacrylate,PMMA)树脂、聚苯乙烯(polystyrene,PS)树脂、苯乙烯-丙烯酰腈共聚物(styrene-acrylonitrile copolymer,SAN)树脂、聚硅氧丙烯酸(silicone-acrylic)树脂、前述的组合或其他合适的高分子材料制成。驱动层155可包含多个薄膜晶体管(thin-film transistors,TFT)、电容、导电层、接触窗、绝缘层或其他半导体元件。此外,导电垫157a、157b、157c和157d由具有良好导电性的金属,例如金(Au)、银(Ag)、铜(Cu)、铂(Pt)、镍(Ni)、锡(Sn)、镁(Mg)、前述的组合或其他导电材料制成。可挠性基板153、驱动层155以及导电垫157a、157b、157c和157d由沉积制程、打印制程、射出制程或其他合适的制程形成。
接着,再参见图1G,在驱动层155及导电垫157a、157b、157c和157d上形成含有多个导电粒子160的异方性导电膜(anisotropic conductive film,ACF)159。明确而言,导电粒子160均匀的分布在异方性导电膜159内。异方性导电膜159可由树脂材料制成,且导电粒子160为金属材料包覆的胶体材料。
根据一些实施例,如图1H所示,实施接合制程170,以将晶圆基板101与承载基板151接合。一些实施例中,每一个发光二极管115a、115b和115c及导电结构115d与每一个对应的导电垫157a、157b、157c和157d之间夹住且挤压的异方性导电膜159中的导电粒子160数量约为1至3颗,在其他实施例可多于3颗。
再参见图1H,在实施接合制程170的期间,可将导电垫157a、157b、157c和157d、驱动层155、可挠性基板153和承载基板151向下压。明确而言,导电垫157a、157b、157c和157d、驱动层155、可挠性基板153和承载基板151在对应于第一电极113a、113b、113c和113d(如图1F所示)的位置,以及对应于发光二极管115a、115b和115c、导电结构115d与导电垫157a、157b、157c和157d之间的导电粒子160的位置可具有弯曲的凹陷形状。
值得注意的是,在图1H所示的剖面示意图中,导电粒子160与导电垫157a、157b、157c和157d之间的界面、导电垫157a、157b、157c和157d与驱动层155之间的界面、驱动层155与可挠性基板153之间的界面以及可挠性基板153与承载基板151之间的界面皆为弯曲的形状。
接着,参见图1I,移除晶圆基板101。一些实施例中,可使用激光剥离(laser liftoff)制程移除晶圆基板101。然后,借由蚀刻制程移除缓冲层103,如图1J所示,暴露出发光二极管115a、115b和115c以及导电结构115d。
如图1K所示,在异方性导电膜159、发光二极管115a、115b和115c以及导电结构115d上形成多个延伸部181a、181b、181c和181d。明确而言,延伸部181a、181b、181c和181d覆盖在发光二极管115a、115b和115c以及导电结构115d之间的异方性导电膜159的顶面。一些实施例中,延伸部181a、181b、181c和181d分别与第二电极109a、109b、109c和109d电性连接。延伸部181a、181b、181c和181d的材料和制程相同或相似于第二电极109a、109b、109c和109d的材料和制程,在此便不重复叙述。
然后,参见图1L,可在延伸部181a、181b、181c和181d以及导电结构115d上形成遮光层183(例如黑色矩阵(black matrix,BM),且在形成遮光层183之后,多个开口185a、185b和185c分别暴露出一部分的发光二极管115a、115b和115c。一些实施例中,遮光层183可包含黑色光阻、黑色印刷油墨、黑色树脂或其他合适的不同颜色的遮光材料,但不限于此。遮光层183是用以分隔发光二极管115a、115b和115c所发出的光。
在形成遮光层183之后,可在开口185a、185b和185c内选择性地形成光学转换层187。在本实施例的图1L中,在开口185b和185c内设置光学转换层187,且光学转换层187并未设置在开口185a内。光学转换层187可由磷光(phosphor)层、萤光粉(fluorescentpowder)层、量子点(quantum-dot)层、环氧树脂(epoxy resin)层、结合量子点的硅氧树脂(silicone resin)层或前述的组合制成,使用射出制程或涂布(coating)制程形成,但不限于此。此外,与发光二极管115b和115c对应的光学转换层187的部分可由相同材料或不同材料制成。举例而言,与发光二极管115b和115c对应的光学转换层187的部分通常由相同的树脂层结合相同材料但不同直径的量子点材料制成。量子点材料可例如为硫化锌(ZnS)、硒化锌(ZnSe)、碲化锌(ZnTe)、硒化镉(CdSe)、碲化镉(CdTe)、硫化镉(CdS)、氮化镓(GaN)、氮化铟(InN)、磷化铟(InP)、砷化铟(InAs)、硫化铅(PbS)、硒化铅(PbSe),但不限于此。此外,光学转换层187可转换发光二极管115a、115b和115c发出的光的波长,可改变发光二极管115a、115b和115c发出的光的颜色。应该注意的是,遮光层183和光学转换层187的制程和位置并不限于上述之内容。
接续前述,如图1M所示,移除承载基板151。一些实施例中,可使用激光剥离制程移除承载基板151。然后,如图1N所示,借由支撑胶189将支撑膜191附着至可挠性基板153。在将支撑膜191附着至可挠性基板153之后,完成显示装置100。在本实施例中,发光二极管115a、115b和115c发出的光为蓝光。借由发光二极管115b上的光学转换层187,可将发光二极管115b发出的蓝光转换成绿光,且借由发光二极管115c上的光学转换层187,可将发光二极管115c发出的蓝光转换成红光。
一些实施例中,支撑膜191可由绝缘材料制成。特别是支撑膜191可由与可挠性基板153的高分子材料不同的高分子材料制成,例如聚萘二甲酸乙二酯(polyethylenenaphthalate,PEN)、聚乙烯对苯二甲酸酯(polyethylene terephthalate,PET)、聚氯乙烯(polyvinyl chloride,PVC)、聚丙烯(polypropylene,PP)、聚酯(polyester)、聚酰胺(polyamide,PA)、橡胶(天然或合成)、前述的组合或其他合适的高分子材料。
如图1N所示,支撑膜191具有厚度T1,支撑胶189具有厚度T2,可挠性基板153具有厚度T3,以及发光二极管115a、115b和115c具有厚度T4。厚度T4定义为发光二极管115a、115b和115c的最顶面至最底面之间的距离。应注意的是厚度T1分别大于厚度T2、T3和T4。
一些实施例中,支撑膜191的硬度在铅笔硬度的3B与3H等级之间。特别是支撑膜191的硬度在铅笔硬度的B等级与H等级之间。
支撑膜191的硬度和厚度应大于可挠性基板153的硬度和厚度,且可挠性基板153的材料应较支撑膜191的材料耐热。如此,支撑膜191可在接合制程期间支撑发光二极管115a、115b和115c及导电结构115d,且可挠性基板153可耐受显示装置100的制程所产生的高温,使得显示装置100在根据上述实施例的制程期间不会受到损坏。
图2是根据一些实施例,说明显示装置100的透视图,其中图1A-1N是沿着图2中线I-I’的显示装置100的剖面示意图。如图2所示,设置于异方性导电膜159内的发光二极管(包含发光二极管115a、115b和115c)的数量并未限定于3个,且遮光层183的设置是用以将发光二极管彼此分隔,如此可避免相邻的发光二极管所发出的光之间产生干涉。应注意的是,沿着x方向上仅绘示一条延伸的遮光层183,然而,遮光层183的数量可为不只一条。
图3是图1N中A区域的部分放大图。如图3所示,被第一电极113a和导电垫157a夹住和挤压的导电粒子160在x方向上具有宽度X,在y方向上具有宽度Y(未绘示),且在z方向上具有高度Z。一些实施例中,高度Z与宽度X的比值或高度Z与宽度Y的比值在约35%至约65%的范围内。若高度Z与宽度X的比值或高度Z与宽度Y的比值小于35%,导电粒子160的结构可能会损毁。另一方面,若高度Z与宽度X的比值或高度Z与宽度Y的比值大于65%,导电粒子160可能与发光二极管115a、115b和115c、导电结构115d以及导电垫157a、157b、157c和157d轻微接触,如此可能无法顺利地形成发光二极管115a、115b和115c及导电结构115d与导电垫157a、157b、157c和157d之间的导电路径。
此外,导电粒子160与导电垫157a之间的界面、导电垫157a与驱动层155之间的界面的一部分,以及驱动层155与可挠性基板153之间的界面的一部分皆为弯曲的,且前述的弯曲的部分皆共形(conformal)。一些实施例中,该多个弯曲的部分可使用光学显微镜(optical microscope,OM)观察,且在光学显微镜下观察到的上视图中,弯曲的部分可为圆形、椭圆形或不规则形。
再参见图3,水平线a-a’对齐于导电垫157a的最顶面,水平线b-b’对齐于不在第一电极113a下的驱动层155的一部分的顶面,水平线c-c’对齐于在第一电极113a下但不在导电粒子160下的驱动层155的一部分的顶面,以及水平线d-d’对齐于在导电粒子160下的驱动层155的弯曲顶面的最低处。
水平线a-a’和b-b’之间具有距离D1,水平线a-a’和c-c’之间具有距离D2,且水平线a-a’和d-d’之间具有距离D3。距离D1为未受接合制程影响的导电垫157a的厚度,亦即未被向下压的厚度。距离D2反应导电垫157a被第一电极113a向下压所受到的影响。距离D3反应导电垫157a被第一电极113a和导电粒子160向下压所受到的影响。应注意的是距离D1、D2和D3皆不相同。在本实施例中,距离D3大于距离D2,且距离D2大于距离D1。
图4A-4G是根据一些其他的实施例,说明形成图4G所示的显示装置200的方法的各个示范连续阶段的剖面示意图。
如图4A所示,借由转移头阵列201吸附或粘附发光二极管215a和215b,且在发光二极管215a和215b的另一侧面分别形成导电元件213a和213b(又称为第一电极)。一些实施例中,发光二极管215a和215b可为微型发光二极管。
此外,提供承载基板251,且在承载基板251上形成可挠性基板253,在可挠性基板253上形成驱动层255,以及在驱动层255上形成导电垫257a和257b。发光二极管215a和215b、导电元件213a和213b、承载基板251、可挠性基板253、驱动层255和导电垫257a和257b的制程和材料相同或相似于图1N所示的对应的元件的制程和材料,在此便不重复叙述。
在本实施例中,导电元件213a和213b以及导电垫257a和257b可由铟-钯(In-Pd)、金-锡(Au-Sn)、钯-锡(Pb-Sn)、铟-锡(In-Sn)、金-硅(Au-Si)、金-金(Au-Au)、前述的组合或其他用于共晶接合(eutectic bonding)的合适的金属/合金制成。
如图4B所示,使用转移头阵列201实施接合制程,以借由导电元件213a和213b以及导电垫257a和257b之间的共晶接合将发光二极管215a和215b与可挠性基板253接合。然后,移除转移头阵列201。在接合制程期间,可将导电垫257a和257b、驱动层255、可挠性基板253以及承载基板251向下压。
明确而言,导电垫257a和257b、驱动层255、可挠性基板253以及承载基板251可具有对应于导电元件213a和213b的形状和位置的弯曲形状。
应注意的是,导电元件213a和213b与导电垫257a和257b之间的界面、导电垫257a和257b与驱动层255之间的界面、驱动层255与可挠性基板253之间的界面以及可挠性基板253与承载基板251之间的界面皆为弯曲的。
接续前述,根据一些实施例,参见图4C,在驱动层255上形成绝缘层217,且一部分的绝缘层217填入光电二极管215a和251b之间的空间内。绝缘层217暴露出光电二极管215a和251b的顶部。绝缘层217的制程和材料相同或相似于图1E的绝缘层111a、111b、111c和111d的制程和材料,在此便不重复叙述。
随后,如图4D所示,在绝缘层217上形成第二电极层219,且第二电极层219覆盖光电二极管215a和251b暴露出的部分。然后,在第二电极层219上形成钝化层221。第二电极层219和钝化层221的制程和材料相同或相似于导电元件213a和213b以及绝缘层217的制程和材料,在此便不重复叙述。
根据一些实施例,如图4E所示,在钝化层221上形成光学转换结构229,且在光学转换结构229上形成盖层231。光学转换结构229可选择性地形成,且其包含光学转换层223、形成于光学转换层223上的粘着层225,以及形成于粘着层225上的彩色滤光层227。光学转换层223的制程和材料相同或相似于图1L的光学转换层187的制程和材料,在此便不重复叙述。
接着,参见图4F,移除承载基板251。一些实施例中,可使用激光剥离制程移除承载基板251。然后,如图4G所示,借由支撑胶289将支撑膜291粘附至可挠性基板253。在将支撑膜291粘附至可挠性基板253之后,完成显示装置200。支撑膜291的制程和材料相同或相似于图1N的支撑膜191的制程和材料,在此便不重复叙述。
再参见图4G,支撑膜291具有厚度T5,支撑胶289具有厚度T6,可挠性基板253具有厚度T7,以及发光二极管215a和215b具有厚度T8。应注意的是厚度T5分别大于厚度T6、T7和T8。
一些实施例中,支撑膜291的硬度在铅笔硬度的3B与3H等级之间。特别是支撑膜291的硬度可在铅笔硬度的B等级与H等级之间。
支撑膜291的硬度和厚度应大于可挠性基板253的硬度和厚度,且可挠性基板253的材料应较支撑膜291的材料耐热。如此,支撑膜291可在接合制程期间支撑发光二极管215a和215b,且可挠性基板253可耐受显示装置200的制程所产生的高温,使得显示装置200在根据上述实施例的制程期间不会受到损坏。
图4H是图4G中B区域的部分放大图。如图4H所示,导电元件213a与导电垫257a之间的界面、导电垫257a与驱动层255之间的界面的一部分,驱动层255与可挠性基板253之间的界面的一部分,以及可挠性基板253与支撑胶289之间的界面的一部分皆为弯曲的,且前述的弯曲的部分皆共形。一些实施例中,弯曲的部分可使用光学显微镜(OM)观察,且在光学显微镜下观察到的上视图中,弯曲的部分可为圆形、椭圆形或不规则形。
再参见图4H,未被导电元件213a覆盖的导电垫257a的顶面的延伸线以虚线绘示。距离D4即为未被导电元件213a覆盖的一部分的导电垫257a的厚度,且距离D5定义为延伸线与导电垫257a的最底面之间的距离。
距离D4为导电垫257a未受接合制程影响的厚度,亦即未被向下压的厚度。距离D5反应导电垫257a被导电元件213a向下压所受到的影响。应注意的是距离D4和D5不同。在本实施例中,距离D5大于距离D4。一些实施例中,距离D4小于导电元件213a的厚度。
图5A是根据一些实施例,说明使用铅笔硬度试验机对显示装置的支撑膜391进行示范测试方法的剖面示意图。图5B是根据一些实施例,说明使用与图5A相同的铅笔硬度试验机对显示装置的可挠性基板353进行示范测试方法的剖面示意图。
在铅笔硬度试验中,用铅笔硬度试验机的夹具夹住铅笔,且在测试物上定速移动一水平距离。在本试验中,此距离订为1.3cm,铅笔硬度试验机的夹具配重500g,以及铅笔和测试物之间的夹角订为45度。如此,铅笔可以稳定的应力刮擦测试物。在每一次测试之间,铅笔的笔芯必须被旋转至另一面。在进行三次测试之后,必须研磨铅笔以进行下一阶段的测试。借由铅笔硬度试验的实施,使用不同硬度的铅笔以测试样本的硬度。
如图5A所示,在测试平台300上固定可挠性基板353,且借由在支撑膜391和可挠性基板353之间的支撑胶389,将支撑膜391粘附至可挠性基板353。可挠性基板353、支撑胶389和支撑膜391为显示装置的一部分。在支撑膜391的顶面上进行第一阶段的铅笔硬度测试,且在前述的实验参数的设定下,沿着支撑膜391的顶面移动铅笔400。
接着,参见图5B,在支撑膜391上实施铅笔硬度测试之后,移除支撑膜391和支撑胶389,以及将可挠性基板353固定于测试平台300上。在可挠性基板353的顶面上进行第二阶段的铅笔硬度测试,且在前述的实验参数的设定下,沿着可挠性基板353的顶面移动铅笔500。
图6是根据一些实施例,说明显示装置的支撑膜391和可挠性基板353的铅笔硬度测试结果。如图6所示,对支撑膜的三个样本和可挠性基板的三个样本进行测试。损坏率的栏位代表样本在铅笔硬度试验中被损坏的几率。根据图6显示的测试结果,支撑膜的硬度大于铅笔硬度的HB等级,且支撑膜的硬度大于可挠性基板的硬度。
借由选择硬度和厚度大于可挠性基板的支撑膜材料,以及选择较支撑膜耐热的可挠性基板材料,使支撑膜在接合制程期间支撑发光二极管,以及让可挠性基板可耐受显示装置的制程所产生的高温,进而使显示装置不受到损坏。
再者,为了确保发光二极管与可挠性基板上的导电垫之间能顺利接合,亦即发光二极管电性连接于导电垫,本发明的一些实施例提供发光二极管与导电垫之间的导电元件的形状。
明确而言,当使用含有导电粒子的异方性导电膜作为导电元件时,导电粒子具有在35%至65%的范围内的高宽比。当使用发光二极管的第一电极作为导电元件时,在实施接合制程之后的剖面示意图中,导电元件邻接于导电垫的一侧面具有至少一部分为弯曲的形状,且导电垫邻接于驱动层的一侧面具有至少一部分也为弯曲的形状,前述导电元件的弯曲部分与前述导电垫的弯曲部分为共形的弯曲形状。
虽然本发明已以较佳实施例揭示如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作些许的修改和完善,因此本发明的保护范围当以权利要求书所界定的为准。
Claims (20)
1.一种显示装置,包括:
一支撑膜;
一可挠性基板,设置于该支撑膜上;
一驱动层,设置于该可挠性基板上;
一导电垫,设置于该驱动层上;以及
一发光二极管,设置于该导电垫上且电性连接于该导电垫,
其中该支撑膜具有一第一硬度,该可挠性基板具有一第二硬度,且该第一硬度大于或等于该第二硬度。
2.如权利要求1所述的显示装置,其特征在于,该第一硬度在铅笔硬度的3B等级与3H等级之间。
3.如权利要求1所述的显示装置,其特征在于,该支撑膜是由一绝缘材料制成。
4.如权利要求1所述的显示装置,其特征在于,该支撑膜和该可挠性基板是由不同的高分子材料制成,且该可挠性基板较该支撑膜耐热。
5.如权利要求1所述的显示装置,其特征在于,该支撑膜具有一第一厚度,该发光二极管具有一第二厚度,且该第一厚度大于该第二厚度。
6.如权利要求5所述的显示装置,其特征在于,该可挠性基板具有一第三厚度,且该第三厚度小于该第一厚度。
7.如权利要求5所述的显示装置,更包括:
一支撑胶,设置于该可挠性基板和该支撑膜之间,其中该支撑胶具有一第四厚度,且该第四厚度小于该第一厚度。
8.如权利要求5所述的显示装置,更包括:
一导电元件,设置于该发光二极管与该导电垫之间,
其中该导电垫具有一第五厚度,该导电元件具有一第六厚度,且该第五厚度小于该第六厚度。
9.如权利要求8所述的显示装置,其特征在于,该导电元件包括一异方性导电膜具有多个导电粒子,且该多个导电粒子具有一高宽比在35%至65%的范围内。
10.如权利要求8所述的显示装置,其特征在于,在一剖面图中,该导电元件具有一第一侧面邻接于该导电垫,且至少一部分的该第一侧面为弯曲的形状。
11.如权利要求10所述的显示装置,其特征在于,在该剖面图中,该导电垫具有一第二侧面邻接于该驱动层,且至少一部分的该第二侧面为弯曲的形状。
12.如权利要求11所述的显示装置,其特征在于,该第一侧面的弯曲的该部分与该第二侧面的弯曲的该部分为共形。
13.一种显示装置的形成方法,包括:
在一承载基板上形成一可挠性基板;
在该可挠性基板上形成一驱动层;
在该驱动层上形成一导电垫;
实施一接合制程将一发光二极管与该导电垫接合,其中该发光二极管电性连接于该导电垫;
移除该承载基板;以及
将一支撑膜附着至该可挠性基板,
其中该支撑膜具有一第一硬度,该可挠性基板具有一第二硬度,且该第一硬度大于或等于该第二硬度。
14.如权利要求13所述的显示装置的形成方法,其特征在于,该第一硬度在铅笔硬度的3B等级与3H等级之间。
15.如权利要求13所述的显示装置的形成方法,其特征在于,该支撑膜具有一第一厚度,该发光二极管具有一第二厚度,且该第一厚度大于该第二厚度。
16.如权利要求15所述的显示装置的形成方法,其特征在于,该可挠性基板具有一第三厚度,且该第三厚度小于该第一厚度。
17.如权利要求15所述的显示装置的形成方法,更包括:
在实施该接合制程之前,在该导电垫或该发光二极管上形成一导电元件,其中在实施该接合制程之后,该发光二极管借由该导电元件电性连接于该导电垫,该导电垫具有一第四厚度,且该导电元件具有一第五厚度,以及该第四厚度小于该第五厚度。
18.如权利要求17所述的显示装置的形成方法,其特征在于,该导电元件包括一异方性导电膜具有多个导电粒子。
19.如权利要求17所述的显示装置的形成方法,其特征在于,在实施该接合制程之后的一剖面图中,该导电元件具有一第一侧面邻接于该导电垫,且至少一部分的该第一侧面为弯曲的形状。
20.如权利要求19所述的显示装置的形成方法,其特征在于,在实施该接合制程之后的该剖面图中,该导电垫具有一第二侧面邻接于该驱动层,且至少一部分的该第二侧面为弯曲的形状,以及该第一侧面的弯曲的该部分与该第二侧面的弯曲的该部分为共形。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662415542P | 2016-11-01 | 2016-11-01 | |
US62/415,542 | 2016-11-01 | ||
US201762479326P | 2017-03-31 | 2017-03-31 | |
US62/479,326 | 2017-03-31 | ||
US15/642,599 | 2017-07-06 | ||
US15/642,599 US10593657B2 (en) | 2016-11-01 | 2017-07-06 | Display devices and methods for forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108022941A true CN108022941A (zh) | 2018-05-11 |
CN108022941B CN108022941B (zh) | 2021-08-10 |
Family
ID=59895205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711032522.XA Active CN108022941B (zh) | 2016-11-01 | 2017-10-30 | 显示装置及其形成方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10593657B2 (zh) |
EP (1) | EP3316299B1 (zh) |
KR (1) | KR102447608B1 (zh) |
CN (1) | CN108022941B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110600418A (zh) * | 2019-08-23 | 2019-12-20 | 武汉华星光电半导体显示技术有限公司 | 柔性显示装置的剥离方法及其剥离装置 |
CN111462622A (zh) * | 2019-01-21 | 2020-07-28 | 群创光电股份有限公司 | 可折式显示装置 |
CN113990765A (zh) * | 2021-12-28 | 2022-01-28 | 深圳市思坦科技有限公司 | 柔性发光器件的制备方法、柔性发光器件及发光装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10332949B2 (en) | 2016-07-06 | 2019-06-25 | Seoul Semiconductor Co., Ltd. | Display apparatus |
US10340256B2 (en) * | 2016-09-14 | 2019-07-02 | Innolux Corporation | Display devices |
KR102455483B1 (ko) * | 2017-06-30 | 2022-10-19 | 삼성전자주식회사 | Led 장치 및 그 제조 방법 |
CN110226229A (zh) * | 2018-01-02 | 2019-09-10 | 孙润光 | 一种显示器件结构 |
US10993317B2 (en) * | 2018-09-28 | 2021-04-27 | Apple Inc. | Wafer level optical module |
KR20200054747A (ko) * | 2018-11-12 | 2020-05-20 | 삼성전자주식회사 | 디스플레이 모듈, 이를 포함하는 디스플레이 장치 및 디스플레이 모듈 제조방법 |
JP7197336B2 (ja) * | 2018-11-15 | 2022-12-27 | 株式会社ジャパンディスプレイ | 照明装置及び表示装置 |
CN113228144B (zh) * | 2018-12-28 | 2023-09-05 | Agc株式会社 | 透明显示装置及移动体 |
US20220059521A1 (en) * | 2019-01-02 | 2022-02-24 | Lumiode, Inc. | System and method of fabricating display structures |
CN110361891B (zh) | 2019-07-29 | 2021-01-15 | 武汉华星光电技术有限公司 | 背光模组 |
CN111048499B (zh) * | 2019-12-16 | 2022-05-13 | 业成科技(成都)有限公司 | 微发光二极管显示面板及其制备方法 |
US11901497B2 (en) * | 2019-12-24 | 2024-02-13 | Seoul Viosys Co., Ltd. | Method of repairing light emitting device, apparatus for repairing light emitting device, and display panel having repaired light emitting device |
CN113611786B (zh) * | 2021-08-02 | 2022-09-27 | 东莞市中麒光电技术有限公司 | 剥离良率高且方便倒膜的led芯片巨量转移方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050116623A1 (en) * | 2003-11-29 | 2005-06-02 | Mu-Hyun Kim | Organic electroluminescent display device and method for manufacturing the same |
CN104183682A (zh) * | 2013-05-27 | 2014-12-03 | 崴发控股有限公司 | 覆晶式发光二极管元件及其封装结构 |
CN105051923A (zh) * | 2013-03-28 | 2015-11-11 | 东芝北斗电子株式会社 | 发光装置及其制造方法 |
US20160043153A1 (en) * | 2014-08-08 | 2016-02-11 | Samsung Display Co., Ltd. | Flexible display apparatus |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6781661B2 (en) * | 2001-02-09 | 2004-08-24 | Lg. Philips Lcd Co., Ltd. | Liquid crystal display device and method of forming the same |
JP3870941B2 (ja) * | 2002-10-31 | 2007-01-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
US7141828B2 (en) * | 2003-03-19 | 2006-11-28 | Gelcore, Llc | Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact |
US7456035B2 (en) * | 2003-07-29 | 2008-11-25 | Lumination Llc | Flip chip light emitting diode devices having thinned or removed substrates |
EP2178133B1 (en) * | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device |
US8455895B2 (en) * | 2010-11-08 | 2013-06-04 | Bridgelux, Inc. | LED-based light source utilizing asymmetric conductors |
US9478719B2 (en) * | 2010-11-08 | 2016-10-25 | Bridgelux, Inc. | LED-based light source utilizing asymmetric conductors |
US8575639B2 (en) * | 2011-02-16 | 2013-11-05 | Cree, Inc. | Light emitting devices for light emitting diodes (LEDs) |
US8652860B2 (en) * | 2011-01-09 | 2014-02-18 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in a molded interconnect structure |
KR20130022570A (ko) * | 2011-08-25 | 2013-03-07 | 삼성전기주식회사 | 터치패널이 포함된 디스플레이장치 |
TWI473317B (zh) * | 2011-11-17 | 2015-02-11 | Au Optronics Corp | 可撓性主動元件陣列基板以及有機電激發光元件 |
JP6074938B2 (ja) * | 2012-07-27 | 2017-02-08 | セイコーエプソン株式会社 | 発光装置、及び電子機器 |
US9768398B2 (en) * | 2012-11-30 | 2017-09-19 | Lg Chem, Ltd. | Substrate for organic electronic device |
KR102021028B1 (ko) * | 2012-12-04 | 2019-09-16 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US9178123B2 (en) * | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
KR102222680B1 (ko) * | 2013-02-01 | 2021-03-03 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 기판, 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법 |
WO2014140796A1 (en) | 2013-03-15 | 2014-09-18 | Cooledge Lighting, Inc. | Wafer-level flip chip device packages and related methods |
KR102135352B1 (ko) * | 2013-08-20 | 2020-07-17 | 엘지전자 주식회사 | 표시장치 |
JP2016218109A (ja) * | 2015-05-14 | 2016-12-22 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
US20160351548A1 (en) * | 2015-05-28 | 2016-12-01 | Mikro Mesa Technology Co., Ltd. | Light emitting diode display device and manufacturing method thereof |
KR102393374B1 (ko) * | 2015-08-31 | 2022-05-03 | 삼성디스플레이 주식회사 | 표시 장치 및 상기 표시 장치의 제조 방법 |
KR102438247B1 (ko) * | 2015-09-07 | 2022-08-30 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR102490624B1 (ko) * | 2015-10-30 | 2023-01-20 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 및 이의 제조 방법 |
KR102591388B1 (ko) * | 2016-01-18 | 2023-10-19 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
US20180337354A1 (en) * | 2016-02-08 | 2018-11-22 | Sharp Kabushiki Kaisha | Organic el display device |
TWM536158U (zh) * | 2016-11-03 | 2017-02-01 | Cheng-Chi Lu | 一種高硬度軟膜結構 |
-
2017
- 2017-07-06 US US15/642,599 patent/US10593657B2/en active Active
- 2017-08-01 KR KR1020170097522A patent/KR102447608B1/ko active IP Right Grant
- 2017-09-18 EP EP17191515.0A patent/EP3316299B1/en active Active
- 2017-10-30 CN CN201711032522.XA patent/CN108022941B/zh active Active
-
2020
- 2020-02-05 US US16/782,220 patent/US10985150B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050116623A1 (en) * | 2003-11-29 | 2005-06-02 | Mu-Hyun Kim | Organic electroluminescent display device and method for manufacturing the same |
CN105051923A (zh) * | 2013-03-28 | 2015-11-11 | 东芝北斗电子株式会社 | 发光装置及其制造方法 |
CN104183682A (zh) * | 2013-05-27 | 2014-12-03 | 崴发控股有限公司 | 覆晶式发光二极管元件及其封装结构 |
US20160043153A1 (en) * | 2014-08-08 | 2016-02-11 | Samsung Display Co., Ltd. | Flexible display apparatus |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111462622A (zh) * | 2019-01-21 | 2020-07-28 | 群创光电股份有限公司 | 可折式显示装置 |
CN111462622B (zh) * | 2019-01-21 | 2022-08-05 | 群创光电股份有限公司 | 可折式显示装置 |
CN110600418A (zh) * | 2019-08-23 | 2019-12-20 | 武汉华星光电半导体显示技术有限公司 | 柔性显示装置的剥离方法及其剥离装置 |
CN110600418B (zh) * | 2019-08-23 | 2022-03-29 | 武汉华星光电半导体显示技术有限公司 | 柔性显示装置的剥离方法及其剥离装置 |
CN113990765A (zh) * | 2021-12-28 | 2022-01-28 | 深圳市思坦科技有限公司 | 柔性发光器件的制备方法、柔性发光器件及发光装置 |
Also Published As
Publication number | Publication date |
---|---|
US10985150B2 (en) | 2021-04-20 |
EP3316299B1 (en) | 2021-03-17 |
EP3316299A1 (en) | 2018-05-02 |
KR102447608B1 (ko) | 2022-09-26 |
US20180122786A1 (en) | 2018-05-03 |
US20200176430A1 (en) | 2020-06-04 |
KR20180048282A (ko) | 2018-05-10 |
US10593657B2 (en) | 2020-03-17 |
CN108022941B (zh) | 2021-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108022941A (zh) | 显示装置及其形成方法 | |
CN108987432A (zh) | 显示装置 | |
US11610870B2 (en) | Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device | |
JP7093430B2 (ja) | マイクロ組立ledディスプレイ | |
CN102194948B (zh) | 发光器件和发光器件封装 | |
WO2017215067A1 (zh) | 微发光二极管显示面板及其制作方法 | |
CN105493625A (zh) | 利用半导体发光器件的显示装置 | |
CN102263119B (zh) | 发光器件阵列及其制造方法以及发光器件封装 | |
CN109742200A (zh) | 一种显示面板的制备方法、显示面板及显示装置 | |
CN106816451A (zh) | 微型发光显示装置及其制造方法 | |
KR102502970B1 (ko) | 반도체 발광 소자를 이용한 디스플레이 장치의 제조방법 및 디스플레이 장치 | |
CN102651439B (zh) | 发光器件和照明装置 | |
US20230107672A1 (en) | Display panel and method for manufacturing same | |
CN110323245A (zh) | 微发光二极管半成品模块 | |
KR20200129751A (ko) | 마이크로 led 흡착체 및 이를 이용한 마이크로 led 디스플레이 제작 방법 및 마이크로 led 디스플레이 | |
US11901493B2 (en) | Semiconductor devices incorporating quantum dots | |
CN111781772A (zh) | Led背光源、led背光模组及制备方法 | |
CN207409488U (zh) | Led显示设备 | |
CN109545814A (zh) | 显示装置 | |
US20220068999A1 (en) | Micro-led display device and manufacturing method of the same | |
CN110600589A (zh) | 微发光二极管显示器及其制作方法 | |
US20230109528A1 (en) | Micro-led display device | |
KR102243109B1 (ko) | 웨이퍼 레벨 전사를 이용한 중/소형 디스플레이의 대량 제조방법 및 대형 디스플레이 제조 방법 | |
CN1661818A (zh) | 发光二极管结构 | |
US20230361095A1 (en) | Method for manufacturing semiconductor light-emitting device package, semiconductor light-emitting device package manufactured thereby, and display device comprising same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |